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CN102082018B - Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof - Google Patents

Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof Download PDF

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CN102082018B
CN102082018B CN2009102415874A CN200910241587A CN102082018B CN 102082018 B CN102082018 B CN 102082018B CN 2009102415874 A CN2009102415874 A CN 2009102415874A CN 200910241587 A CN200910241587 A CN 200910241587A CN 102082018 B CN102082018 B CN 102082018B
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layer
magnetoresistance effect
core cell
multilayer film
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温振超
于国强
王译
魏红祥
张曙丰
韩秀峰
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Institute of Physics of CAS
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    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
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Abstract

The invention provides a magnetic multilayer film unit, comprising a magnetic multilayer film core unit and a magnetic moment control unit, wherein the magnetic multilayer film core unit comprises a free layer; the magnetic moment control unit comprises two conducting layers; and the free layer of the magnetic multilayer film core unit is positioned in an electric field formed by the two conducting layers. In addition, the invention also provides a corresponding preparation method and a magnetic moment overturning control method of the magnetic multilayer film unit. In the invention, the power consumption of the devices is greatly reduced, and the integration level of the devices can be improved; a preparation process and a semiconductor process are compatible so as to be beneficial to large-scale industrial production; and the magnetic multilayer film unit is beneficial to miniaturization of spintronic devices and has the advantage of radiation resistance. The magnetic multilayer film unit can be widely applied in the spintronic devices such as logic devices, nonvolatile storages, spinning transistors and various sensors and the like in the field of the future computer information communication industry. The invention is beneficial to widening of the application range of the spintronic devices.

Description

A kind of magnetoresistance effect unit and preparation thereof and magnetic moment method for turning
Technical field
The present invention relates to the spintronics technical field, specifically, the present invention relates to a kind of magnetoresistance effect unit and preparation thereof and magnetic moment method for turning.
Background technology
Spintronics device take magnetic random memory (MRAM) as representative has that data are non-volatile, radiation resistance, at a high speed, the characteristics such as high density, low-power consumption, long-life, being the core devices in following next generation computer, the information and communication technology (ICT), is one of important industry technology that promotes high-tech industry and World Economics sustainable development.
The core of spintronics device is controlling spin.And the macro manifestations that spins in magnetic material is exactly magnetic moment, and therefore in the spintronics device based on magnetic material, its core is controlling magnetic moment.The method of traditional control magnetic moment upset is to utilize magnetic field, by the magnetic field that electric current in the hardware cloth produces, makes the magnetic moment upset, changes the sense of current, and magnetic direction changes thereupon.But this control method based on magnetic field exists in the larger problem of power consumption, particularly array device, owing to allow the scope of curent change very limited, the realization difficulty of the method is very large, is unfavorable for the raising of device integrated level.On the other hand, since spin transfer torque effect that electric current in 1996 produces was found, the spintronics device of handling the magnetic moment upset based on the spin-transfer torque effect of electric current had become the focus of current research.Handle magnetic moment by the spin-transfer torque effect and can reduce the required electric current of upset magnetic moment, thereby reach the effect that reduces power consumption.Yet this scheme still has very important difficult point, and for example, its critical reset current density can not reduce, and becomes the bottleneck that the device integrated level improves and device miniaturization develops.And the device preparation technology of this scheme and semiconductor CMOS circuit do not mate, and are difficult to carry out large-scale production with identical technological level standard; Uniformity and the rate of finished products of its explained hereafter also face very large difficulty simultaneously.
Summary of the invention
One of purpose of the present invention provides the magnetoresistance effect unit of a kind of low-power consumption, high density, high integration and miniaturization.
Two of purpose of the present invention provides the preparation method of above-mentioned magnetoresistance effect unit.
Three of purpose of the present invention provides the magnetic moment upset control method of a kind of above-mentioned magnetoresistance effect unit.
For realizing above-mentioned first goal of the invention, the invention provides a kind of magnetoresistance effect unit, comprise magnetoresistance effect core cell and magnetic moment control unit, described multilayer film core cell comprises free layer, described magnetic moment control unit comprises two conductive layers, and the free layer of described multilayer film core cell is arranged in described two formed electric fields of conductive layer.
Wherein, described two conductive layers all are parallel to the face of described magnetoresistance effect core cell.
Wherein, described two conductive layers are all perpendicular to the face of described magnetoresistance effect core cell.
When described two conductive layers during all perpendicular to the face of described magnetoresistance effect core cell, in certain embodiments, the height of described conductive layer (referring to perpendicular to the size on the described face direction) is 1～1.5 with the ratio of described free layer thickness.Further, described magnetic moment control unit can also comprise two the second conductive layers, and described nailed layer is arranged in described two formed electric fields of the second conductive layer, and the ratio of the height of described nailed layer and described nailed layer thickness is 1～1.5.
Wherein, described magnetoresistance effect core cell adopts single Barrier structure; The magnetoresistance effect core cell of single Barrier structure also comprises resilient coating, pinning layer, nailed layer and the barrier layer that is positioned at described free layer downside, and the cover layer that is positioned at described free layer upside.
Wherein, described multilayer film core cell adopts double potential barrier type structure; The magnetoresistance effect core cell of double potential barrier type also comprises the resilient coating that is positioned at described free layer downside, lower pinning layer, lower nailed layer and lower barrierlayer, and is positioned at the upper barrier layer of described free layer upside, upper nailed layer, upper pinning layer and cover layer.
Wherein, described buffer layer thickness is 2～200nm, and it makes material can be from Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO 3, LaAlO 3, CeO 2Middle selection;
Described pinning layer is made by having anti-ferromagnetic alloy, such as IrMn, and FeMn, PtMn, CrMn or Pt (Cr, Mn) alloy, thickness is 3～30nm;
Described nailed layer and free layer are made by magnetic material; The material of nailed layer and free layer can be identical with thickness, also can be not identical;
The thickness of described nailed layer is 0.3～50nm, and the thickness of described free layer is 0.3～50nm; The available magnetic material of described nailed layer and free layer comprises: Co, Fe, Ni or their metal alloy Ni xFe 100-x, Co xFe 100-x, NiFeCo, CoFeSiB, NiFeSiB, or amorphous Co 100-x-yFe xB y(0＜x＜100,0＜y≤20), or Heusler alloy are such as Co 2MnSi, Co 2Cr 0.6Fe 0.4Al; Or have the periodicity multilayer film of perpendicular magnetic anisotropic, such as Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film or CoCr/Pt multilayer film; Or have a single layer alloy film of perpendicular magnetic anisotropic, be alloy (as described in Co-Cr be that alloy comprises Co-Cr, Co-Cr-Nb, Co-Cr-Ta or Co-Cr-Pt alloy), TbFeCo alloy, GdFeCo alloy, Gd-Co alloy, GdFe alloy, TbFe alloy, TbCo/Cr alloy, CoGdZr alloy, CoGdSm alloy, GdTbFeCo alloy or GdTbFe alloy firm such as FePt alloy, PtCoNi alloy, the Co-Cr of CoPt alloy, L10 phase; Or magnetic semiconductor GaMnAs, GaMnN, and ZnO mixes Co etc., or the magnetic material of perovskite structure, such as LaSrMnO, LaCaMnO etc.;
Described barrier layer thickness is 0.5～100nm, makes with insulating material, the preferred Al of described insulating material 2O 3, ZnO, TiO, SnO, MgO, TaO, AlN, SiO 2, or organic molecule material (such as polyvinylchloride, polythene PE, polypropylene PP, polytetrafluoroethylene, organo-metallic compound Alq3 etc.), or the perovskite oxide of composition modulation etc.
Described overburden cover is 5～1000nm, and making material is the less normal metal of resistivity, as Ru, Pt, Ag, Au, Cr, Cu, Al, AlSi with and alloy; Or be superconductor, such as Nb, Sn, Pb, In, Ta, Nb-Ti and YBa2Cu3O7 etc.
The plane geometric shape of described preparation magnetoresistance effect core cell is ellipse, rectangle, circle, square, polygon, annular, oval ring or polygon annular.
Described conductive layer thickness is 2～200nm, and the making material is Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO 3, LaAlO 3Or CeO 2
For realizing above-mentioned second goal of the invention, the present invention also provides the preparation method of a kind of magnetoresistance effect unit, and the method comprises the following steps:
1) prepares lower conductiving layer at substrate;
2) at described lower conductiving layer preparation magnetoresistance effect core cell, the face of described magnetoresistance effect core cell is parallel with described lower conductiving layer;
3) insulating barrier in the preparation of the top of described magnetoresistance effect core cell, then insulating barrier prepares conductive layer on described.
Wherein, described step 2) in, also be included in preparation magnetoresistance effect core cell before, the lower insulating barrier of first preparation is then at the described magnetoresistance effect core cell of described lower insulating barrier preparation.
For realizing above-mentioned second goal of the invention, the present invention also provides the preparation method of another kind of magnetoresistance effect unit, and the method comprises the following steps:
1) at substrate preparation magnetoresistance effect core cell;
2) prepare insulating barrier in the both sides of described preparation magnetoresistance effect core cell, at two vertical conductive layers of described insulating barrier outside preparation, the free layer of described magnetoresistance effect core cell is between described two vertical conductive layers.
For realizing above-mentioned the 3rd goal of the invention, the present invention also provides the magnetic moment upset control method of a kind of above-mentioned magnetoresistance effect unit, and the method comprises the following steps:
1) obtains the upset critical voltage of described magnetoresistance effect unit;
2) between described two conductive layers, apply the voltage that is not less than described upset critical voltage, realize the magnetic moment upset, namely write operation is carried out in described magnetoresistance effect unit.
Compared with prior art, the present invention has following technique effect:
The present invention greatly reduces the power consumption of device.
The present invention can improve the integrated level of device.
Magnetic moment control unit of the present invention is compatible mutually with semiconductor technology, is conducive to develop large-scale industrial production.
The present invention is conducive to the miniaturization of spintronics device.
Magnetoresistance effect of the present invention has radiation-resistant advantage.
Magnetoresistance effect of the present invention can be widely used in logical device, nonvolatile memory, spin transistor and the various sensor spintronics device in the following computerized information communication industry field.The present invention is conducive to widen the range of application of spintronics device.
Description of drawings
Below, describe by reference to the accompanying drawings embodiments of the invention in detail, wherein:
Fig. 1 is the longitudinal section schematic diagram of a kind of magnetoresistance effect unit based on vertical face electric field of the present invention;
Fig. 2 is the schematic diagram of a kind of magnetoresistance effect unit based on parallel face electric field of the present invention; Wherein a partly is the longitudinal section schematic diagram, and b partly is vertical view;
Fig. 3 is the schematic diagram of a kind of magnetoresistance effect unit based on the parallel face electric field of local of the present invention; Wherein a partly is the longitudinal section schematic diagram, and b partly is schematic top plan view;
Fig. 4 is the schematic diagram of a kind of magnetoresistance effect unit based on the parallel face electric field of two locals of the present invention; Wherein a partly is the longitudinal section schematic diagram, and b partly is schematic top plan view;
Fig. 5 is the longitudinal section schematic diagram of a kind of dual-potential magnetic multilayer film unit based on vertical face electric field of the present invention;
Fig. 6 is the longitudinal section schematic diagram of a kind of dual-potential magnetic multilayer film unit based on parallel face electric field of the present invention;
Fig. 7 is the longitudinal section schematic diagram of a kind of dual-potential magnetic multilayer film unit based on the parallel face electric field of local of the present invention.
Embodiment
At first, briefly introduce the principle of institute of the present invention foundation.This case inventor has creatively proposed a kind ofly to produce the spin transfer torque effect or the local 3d of magnetic material or the configuration of 4f electronics are changed in magnetoresistance effect by voltage, and and then realizes the method for magnetic moment upset.Its principle is as follows:
Magnetoresistance effect is placed electric field and increases electric field strength, will form the free layer (magnetosphere) of magnetoresistance effect and be similar to Equivalent Magnetic Field to the effect of magnetic material magnetic moment, its magnetic torque changes M · ⊥ ( V ) - M · ⊥ ( 0 ) ≈ A ( eV ) 2 (can reference: D.C.Ralph et al, JMMM, 320 (2008) 1190), wherein
Figure G2009102415874D00052
Expression applies torque behind the voltage,
Figure G2009102415874D00053
Expression applies the torque before the voltage, and A is the balance dimensional constant, and e is the elementary charge constant, and V is by being applied voltage, and the voltage here all refers to form the applied voltage of electric field.Can find out from above-mentioned formula, magnetic moment change approximate be proportional to the applied voltage that forms electric field square.And on the other hand, because the conductivity of free layer is much larger than barrier layer, when therefore magnetoresistance effect being placed electric field, can produce huge electric-force gradient at the interface at free layer and barrier layer, thereby the local 3d of at the interface magnetic material or the configuration of 4f electronics are changed, thereby form the moment that the direction that makes magnetic moment is rotated.Describe for convenient, be referred to as hereinafter field effect.Under the comprehensive function of above two kinds of mechanism, only need in the periphery of magnetoresistance effect two conductive layers to be set, then between two conductive layers, apply voltage, can form the moment of the direction rotation that impels magnetic moment, in the time of only need making this voltage greater than a critical value, the free layer magnetic moment just can overturn.Because this magnetic moment method for turning does not almost have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.
Below, in order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, to magnetoresistance effect of the present invention unit and preparation method thereof, and the magnetic moment control method is elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Embodiment 1
Present embodiment provides a kind of magnetoresistance effect unit based on vertical face electric field.As shown in Figure 1, the magnetoresistance effect unit of present embodiment comprises magnetoresistance effect core cell and magnetic moment control unit.
Wherein, the multilayer film core cell adopts single Barrier structure, comprises successively from the bottom to top resilient coating 1, pinning layer 2, nailed layer 3, barrier layer 4, free layer 5 and cover layer 6.The magnetic moment control unit comprises two conductive layers 7,8, two conductive layers 7,8 all are parallel to the face of magnetoresistance effect core cell, and the multilayer film core cell is between two conductive layers 7,8, and namely the multilayer film core cell is arranged in two conductive layers 7,8 formed electric fields.Have insulating barrier between the conductive layer of multilayer film core cell and the multilayer film core cell in the present embodiment, be used for conductive layer and multilayer film core cell are separated.
Wherein, described buffer layer thickness is 2～200nm, and it is made material and can select from Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO3, LaAlO3, CeO2;
Described pinning layer is made by having anti-ferromagnetic alloy, such as IrMn, and FeMn, PtMn, CrMn or Pt (Cr, Mn) alloy, thickness is 3～30nm;
Described nailed layer and free layer are made by magnetic material; The material of nailed layer and free layer can be identical with thickness, also can be not identical;
The thickness of described nailed layer is 0.3～50nm, and the thickness of described free layer is 0.3～50nm; The available magnetic material of described nailed layer and free layer comprises: Co, Fe, Ni or their metal alloy NixFe100-x, CoxFe100-x, NiFeCo, CoFeSiB, NiFeSiB, or amorphous Co100-x-yFexBy (0＜x＜100,0＜y 20), or the Heusler alloy, such as Co2MnSi, Co2Cr0.6Fe0.4Al; Or have the periodicity multilayer film of perpendicular magnetic anisotropic, such as Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film or CoCr/Pt multilayer film; Or have a single layer alloy film of perpendicular magnetic anisotropic, be alloy (as described in Co-Cr be that alloy comprises Co-Cr, Co-Cr-Nb, Co-Cr-Ta or Co-Cr-Pt alloy), TbFeCo alloy, GdFeCo alloy, Gd-Co alloy, GdFe alloy, TbFe alloy, TbCo/Cr alloy, CoGdZr alloy, CoGdSm alloy, GdTbFeCo alloy or GdTbFe alloy firm such as FePt alloy, PtCoNi alloy, the Co-Cr of CoPt alloy, L10 phase; Or magnetic semiconductor GaMnAs, GaMnN, and ZnO mixes Co etc., or the magnetic material of perovskite structure, such as LaSrMnO, LaCaMnO etc.;
Described barrier layer thickness is 0.5～100nm, makes with insulating material, the preferred Al2O3 of described insulating material, ZnO, TiO, SnO, MgO, TaO, AlN, SiO2, or organic molecule material (such as polyvinylchloride, polythene PE, polypropylene PP, polytetrafluoroethylene, organo-metallic compound Alq3 etc.), or the perovskite oxide of composition modulation etc.
Described overburden cover is 5～1000nm, and making material is the less normal metal of resistivity, as Ru, Pt, Ag, Au, Cr, Cu, Al, AlSi with and alloy; Or be superconductor, such as Nb, Sn, Pb, In, Ta, Nb-Ti and YBa2Cu3O7 etc.
The plane geometric shape of described preparation magnetoresistance effect core cell is ellipse, rectangle, circle, square, polygon, annular, oval ring or polygon annular.
Described conductive layer thickness is 2～200nm, and the making material is Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO3, LaAlO3 or CeO2.
For the magnetoresistance effect unit that present embodiment provides, when when conductive layer applies voltage, the free layer of magnetoresistance effect produces spin transfer torque, and barrier layer and free layer generation of interfaces field effect.Under the comprehensive function of these two kinds of mechanism, as long as reaching certain critical value, the voltage between two conductive layers can make the upset of free layer magnetic moment.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment, owing to almost do not have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.The magnetoresistance effect of present embodiment can be used as core cell and is used for spin logical device, nonvolatile memory, spin transistor and various sensor spintronics device.
The preparation method of present embodiment is simple, and rate of finished products is high, and cost is low.
Embodiment 2
Present embodiment provides a kind of magnetoresistance effect unit based on parallel face electric field.As shown in Figure 2,
The magnetoresistance effect unit of present embodiment comprises magnetoresistance effect core cell and magnetic moment control unit,
Wherein, the multilayer film core cell adopts single Barrier structure, comprises successively from the bottom to top resilient coating 1, pinning layer 2, nailed layer 3, barrier layer 4, free layer 5 and cover layer 6.The magnetic moment control unit comprises two conductive layers 9,10, two conductive layers 9,10 are all perpendicular to the face of magnetoresistance effect core cell, and the multilayer film core cell is between two conductive layers 9,10, and namely the multilayer film core cell is arranged in two conductive layers 9,10 formed electric fields.Have insulating barrier between the conductive layer of multilayer film core cell and the multilayer film core cell in the present embodiment, be used for conductive layer and multilayer film core cell are separated.The b of Fig. 2 partly is the vertical view of the magnetoresistance effect unit of present embodiment, wherein the flat shape of multilayer film core cell is oval, two conductive layers 9,10 are produced on the both sides of this ellipse multilayer film core cell, and two conductive layers 9,10 and the multilayer film core cell between be filled with insulating barrier.
But the making material of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
For the magnetoresistance effect unit that present embodiment provides, when when conductive layer applies voltage, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism, as long as reaching certain critical value, the voltage between two conductive layers can make the upset of free layer magnetic moment.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment, owing to almost do not have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.The magnetoresistance effect of present embodiment can be used as core cell and is used for spin logical device, nonvolatile memory, spin transistor and various sensor spintronics device.
In the present embodiment, the electric field that conductive layer forms can directly act on described free layer, can avoid the magnetic moment switching process to be subject to the impact of other layer of multilayer film core cell.
Embodiment 3
Present embodiment provides a kind of magnetoresistance effect unit based on the parallel face electric field of local.
According to shown in Figure 3, this magnetoresistance effect unit comprises magnetoresistance effect core cell and magnetic moment control unit.Wherein, the multilayer film core cell adopts single Barrier structure, comprises successively from the bottom to top resilient coating 1, pinning layer 2, nailed layer 3, barrier layer 4, free layer 5 and cover layer 6.The magnetic moment control unit comprises two conductive layers 11,12, and the free layer of multilayer film core cell is between two conductive layers 11,12, and namely the free layer of multilayer film core cell is arranged in two conductive layers 11,12 formed electric fields.Two conductive layers 11,12 direction are consistent with embodiment 2, the conductive layer 11 of present embodiment, 12 and the difference of the conductive layer of embodiment 2 be that conductive layer only is arranged on the position corresponding to free layer, the height of conductive layer (referring to perpendicular to the size on the described face direction) is generally 1～1.5 with the ratio of described free layer thickness.The b of Fig. 3 partly is the vertical view of the magnetoresistance effect unit of present embodiment, wherein the flat shape of multilayer film core cell is oval ring, two conductive layers 11,12 flat shape are trapezoidal, they are produced on the both sides of this oval ring multilayer film core cell, and two conductive layers 11,12 and the free layer of multilayer film core cell between be filled with insulating barrier.
But the making material of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when when conductive layer applies voltage, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism, as long as reaching certain critical value, the voltage between two conductive layers can make the upset of free layer magnetic moment.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment, owing to almost do not have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.The magnetoresistance effect of present embodiment can be used as core cell and is used for spin logical device, nonvolatile memory, spin transistor and various sensor spintronics device.
In the present embodiment, the electric field that conductive layer forms can directly act on described free layer, can avoid the magnetic moment switching process to be subject to the impact of other layer of multilayer film core cell.Further, because present embodiment has adopted local electric field, this electric field only acts on free layer, and therefore, the electric field influence that present embodiment can also avoid the magnetic moment switching process to apply arrives other layer of multilayer film core cell.In the present embodiment, in order to guarantee that free layer is applied enough electric fields, simultaneously avoid again other level of this electric field and magnetoresistance effect core cell to influence each other, the height (referring to perpendicular to the size on the described face direction) of general conductive layer and ratio value in 1～1.5 scope of described free layer thickness as far as possible.
Embodiment 4
Present embodiment provides a kind of magnetoresistance effect unit based on the parallel face electric field of two locals.According to shown in Figure 4, this magnetoresistance effect unit comprises magnetoresistance effect core cell and magnetic moment control unit.Wherein, the multilayer film core cell adopts single Barrier structure, comprises successively from the bottom to top resilient coating 1, pinning layer 2, nailed layer 3, barrier layer 4, free layer 5 and cover layer 6.The magnetic moment control unit comprises two conductive layers 11,12, and the free layer of multilayer film core cell is between two conductive layers 11,12, and namely the free layer of multilayer film core cell is arranged in two conductive layers 11,12 formed electric fields.Two conductive layers 11,12 direction are consistent with embodiment 2, the conductive layer 11 of present embodiment, 12 and the difference of the conductive layer of embodiment 2 be that conductive layer only is arranged on the position corresponding to free layer, the height of conductive layer (referring to perpendicular to the size on the described face direction) is generally 1～1.5 with the ratio of described free layer thickness.The b of Fig. 4 partly is the vertical view of the magnetoresistance effect unit of present embodiment, wherein the flat shape of multilayer film core cell is oval ring, two conductive layers 11,12 flat shape are trapezoidal, they are produced on the both sides of this oval ring multilayer film core cell, and two conductive layers 11,12 and the free layer of multilayer film core cell between be filled with insulating barrier.Especially, present embodiment also be provided with two the second conductive layers 11 corresponding to nailed layer 3 ', 12 '.The second conductive layer 11 ', 12 ' direction and conductive layer 11,12 direction consistent.The height of the second conductive layer (referring to perpendicular to the size on the described face direction) is generally 1～1.5 with the ratio of described free layer thickness.And two the second conductive layers 11 ', 12 ' and the nailed layer of multilayer film core cell between also be filled with insulating barrier.
But the making material of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when when conductive layer applies voltage, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism, as long as reaching certain critical value, the voltage between two conductive layers can make the upset of free layer magnetic moment.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment, owing to almost do not have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.The magnetoresistance effect of present embodiment can be used as core cell and is used for spin logical device, nonvolatile memory, spin transistor and various sensor spintronics device.
In the present embodiment, the electric field that conductive layer forms can directly act on described free layer and nailed layer, can reduce the coupling between free layer and the nailed layer, further reduces critical turnover voltage.On the other hand, present embodiment can avoid the magnetic moment switching process to be subject to the impact of multilayer film core cell other layer except free layer and nailed layer.At last, present embodiment can also avoid the magnetic moment switching process to have influence on the normal operation of multilayer film core cell other layer except free layer and nailed layer.In the present embodiment, in order to guarantee that free layer is applied enough electric fields, simultaneously avoid again other level of this electric field and magnetoresistance effect core cell to influence each other, general conductive layer 11,12 height (referring to perpendicular to the size on the described face direction) and ratio value in 1～1.5 scope of described free layer thickness as far as possible.Conductive layer 11 ', 12 ' height and ratio value in 1～1.5 scope of described nailed layer thickness.
Embodiment 5
Present embodiment provides a kind of dual-potential magnetic multilayer film unit based on vertical face electric field.
According to shown in Figure 5, this magnetoresistance effect unit comprises multilayer film core cell and magnetic moment control unit.
Wherein, the multilayer film core cell adopts double potential barrier type structure, comprise successively from the bottom to top resilient coating 1, lower pinning layer 2, lower nailed layer 3 and lower barrierlayer 4, free layer 5, upper barrier layer 4 ', upper nailed layer 3 ', upper pinning layer 2 ' and cover layer 6.The magnetic moment control unit comprises two conductive layers 7,8, two conductive layers 7,8 all are parallel to the face of magnetoresistance effect core cell, and the multilayer film core cell is between two conductive layers 7,8, and namely the multilayer film core cell is arranged in two conductive layers 7,8 formed electric fields.Have insulating barrier between the conductive layer of multilayer film core cell and the multilayer film core cell in the present embodiment, be used for conductive layer and multilayer film core cell are separated.
But the making material of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when when conductive layer applies voltage, the free layer of magnetoresistance effect produces spin transfer torque, and barrier layer and free layer generation of interfaces field effect.Under the comprehensive function of these two kinds of mechanism, as long as reaching certain critical value, the voltage between two conductive layers can make the upset of free layer magnetic moment.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment, owing to almost do not have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.The magnetoresistance effect of present embodiment can be used as core cell and is used for spin logical device, nonvolatile memory, spin transistor and various sensor spintronics device.
The preparation method of present embodiment is simple, and rate of finished products is high, and cost is low.
Embodiment 6
Present embodiment provides a kind of dual-potential magnetic multilayer film unit based on parallel face electric field.According to shown in Figure 6, this magnetoresistance effect unit comprises multilayer film core cell and magnetic moment control unit.
Wherein, the multilayer film core cell adopts double potential barrier type structure, comprise successively from the bottom to top resilient coating 1, lower pinning layer 2, lower nailed layer 3 and lower barrierlayer 4, free layer 5, upper barrier layer 4 ', upper nailed layer 3 ', upper pinning layer 2 ' and cover layer 6.The magnetic moment control unit comprises two conductive layers 9,10, two conductive layers 9,10 are all perpendicular to the face of magnetoresistance effect core cell, and the multilayer film core cell is between two conductive layers 9,10, and namely the multilayer film core cell is arranged in two conductive layers 9,10 formed electric fields.Have insulating barrier between the conductive layer of multilayer film core cell and the multilayer film core cell in the present embodiment, be used for conductive layer and multilayer film core cell are separated.Two conductive layers 9,10 are produced on the both sides of multilayer film core cell, and two conductive layers 9,10 and the multilayer film core cell between be filled with insulating barrier.
But the making material of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when when conductive layer applies voltage, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism, as long as reaching certain critical value, the voltage between two conductive layers can make the upset of free layer magnetic moment.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment, owing to almost do not have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.The magnetoresistance effect of present embodiment can be used as core cell and is used for spin logical device, nonvolatile memory, spin transistor and various sensor spintronics device.
Present embodiment is a kind of dual-potential magnetic multilayer film.Identical with embodiment 2, the electric field that the conductive layer of present embodiment forms can directly act on described free layer, can avoid the magnetic moment switching process to be subject to the impact of other layer of multilayer film core cell.
Embodiment 7
Present embodiment provides a kind of dual-potential magnetic multilayer film unit based on the parallel face electric field of local.According to shown in Figure 7, this magnetoresistance effect unit comprises multilayer film core cell and magnetic moment control unit.
Wherein, the multilayer film core cell adopts double potential barrier type structure, comprise successively from the bottom to top resilient coating 1, lower pinning layer 2, lower nailed layer 3 and lower barrierlayer 4, free layer 5, upper barrier layer 4 ', upper nailed layer 3 ', upper pinning layer 2 ' and cover layer 6.The magnetic moment control unit comprises two conductive layers 11,12, and the free layer of multilayer film core cell is between two conductive layers 11,12, and namely the free layer of multilayer film core cell is arranged in two conductive layers 11,12 formed electric fields.Two conductive layers 11,12 direction are consistent with embodiment 6, the conductive layer 11 of present embodiment, 12 and the difference of the conductive layer of embodiment 2 be that conductive layer only is arranged on the position corresponding to free layer, the height of conductive layer (referring to perpendicular to the size on the described face direction) is generally 1～1.5 with the ratio of described free layer thickness.Two conductive layers 11,12 are produced on the both sides of multilayer film core cell, and two conductive layers 11,12 and the free layer of multilayer film core cell between be filled with insulating barrier.
But the making material of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when when conductive layer applies voltage, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism, as long as reaching certain critical value, the voltage between two conductive layers can make the upset of free layer magnetic moment.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment, owing to almost do not have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.The magnetoresistance effect of present embodiment can be used as core cell and is used for spin logical device, nonvolatile memory, spin transistor and various sensor spintronics device.
Present embodiment is a kind of dual-potential magnetic multilayer film.Identical with embodiment 3, the electric field that the conductive layer of present embodiment forms can directly act on described free layer, can avoid the magnetic moment switching process to be subject to the impact of other layer of multilayer film core cell.Further, because present embodiment has adopted local electric field, this electric field only acts on free layer, and therefore, the electric field influence that present embodiment can also avoid the magnetic moment switching process to apply arrives other layer of multilayer film core cell.
Embodiment 8
Present embodiment provides a kind of method of magnetoresistance effect unit of Preparation Example 1, the method comprises the following steps (to need to prove, following step 2 is to prepare a kind of method that unipotential is built structure magnetic multilayer film core cell to 6, and step 2 is to the 6 technology replacements that can build with other known preparation unipotential structure magnetic multilayer film core cell):
1) selects a substrate Si/SiO 2, thick 500 μ m after the conventional method cleaning, utilize the film growth apparatus magnetically controlled sputter method to deposit lower conducting layer Ru, thickness 100nm;
2) utilize magnetically controlled sputter method to deposit SiO at lower conducting layer 2Insulating barrier, thickness 50nm, then deposit successively each layer of magnetoresistance effect, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoFeB (4nm) is as nailed layer 3, and MgO (2nm) is as barrier layer 4, CoFeB (4nm) as free layer 5 and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: vacuum of the standby end: 1 * 10 -6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; And when deposition pinning layer 2, nailed layer 3 and free layer 5, apply the 100Oe flat magnetic field and induce magnetospheric uniaxial anisotropy.
3) adopt micro fabrication, with step 2) in deposited magnetoresistance effect and be processed into oval ring, oval major axis is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then then development, photographic fixing, rear baking are carved into ellipse to this magnetoresistance effect with ion etching process.
4) in step 3) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize magnetron sputtering deposition thickness to be the SiO of 50nm 2Insulating barrier is buried magnetoresistance effect and is isolated;
5) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
6) Cu that utilizes magnetron sputtering deposition thickness 100nm is as electrode layer, and the micro fabrication that recycling is conventional is processed into electrode shape with electrode layer;
7) utilize the SiO of magnetron sputtering deposit thickness 50nm on electrode layer 2As the Cu of insulating barrier and 100nm as top conductive layer.Namely obtain novel magnetic multilayer film provided by the present invention unit, when upper and lower conductive layers applied voltage, its magnetoresistance effect was in the electric field of formation.
Embodiment 9
Present embodiment provides a kind of method of magnetoresistance effect unit of Preparation Example 2, the method comprises the following steps (to need to prove, following step 1 is to prepare a kind of method that unipotential is built structure magnetic multilayer film core cell to 5, and step 1 is to the 5 technology replacements that can build with other known preparation unipotential structure magnetic multilayer film core cell):
1) selects a substrate Si/SiO 2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit successively each layer of magnetoresistance effect, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoPt (3nm)/CoFeB (1nm) is as nailed layer 3, MgO (2.5nm) is as barrier layer 4, CoFeB (1nm)/CoPt (3nm) as free layer 5 and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: vacuum of the standby end: 1 * 10 -6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate.
2) adopt micro fabrication, with step 1) in deposited magnetoresistance effect and be processed into oval ring, oval major axis is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then then development, photographic fixing, rear baking are carved into oval ring to this magnetoresistance effect with ion etching process.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize magnetron sputtering deposition thickness to be the SiO of 50nm 2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm is as electrode layer, and the micro fabrication that recycling is conventional is processed into electrode shape with electrode layer;
6) utilize micro fabrication, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and prepare be used to holding vertical conductive layer 9,10 groove at insulating barrier.
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required conductive layer shape the sheet base is exposed, then development, photographic fixing, rear baking, then carve the groove of the shape of conductive layer with ion etching process, other zone still has photoresist to bury;
7) then the Cu that utilizes magnetron sputtering deposition 100nm removes photoresist by stripping technology as conductive layer, namely peels off conductive layer with the metal Cu of exterior domain.Namely obtain novel magnetic multilayer film provided by the present invention unit, when two vertical conductive layers applied voltage, its magnetoresistance effect was in the electric field of formation.
Embodiment 10
Present embodiment provides a kind of method of magnetoresistance effect unit of Preparation Example 3, the method comprises the following steps (to need to prove, following step 1 is to prepare a kind of method that unipotential is built structure magnetic multilayer film core cell to 5, and step 1 is to the 5 technology replacements that can build with other known preparation unipotential structure magnetic multilayer film core cell):
1) selects a substrate Si/SiO 2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit successively each layer of magnetoresistance effect, be Ta (5nm)/Ru (20nm)/Ta (5nm) as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoFeB (4nm) is as nailed layer 3, MgO (2nm) is as barrier layer 4, CoFeB (4nm) as free layer 5 and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: vacuum of the standby end: 1 * 10 -6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; And when deposition pinning layer 2, nailed layer 3 and free layer 5, apply the 100Oe flat magnetic field and induce magnetospheric uniaxial anisotropy.
2) adopt micro fabrication, with step 1) in deposited magnetoresistance effect and be processed into ellipse, oval major axis is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then then development, photographic fixing, rear baking are carved into oval ring to this magnetoresistance effect with ion etching process.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize magnetron sputtering deposition thickness to be the SiO of 100nm 2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm is as electrode layer, and the micro fabrication that recycling is conventional is processed into electrode shape with electrode layer;
6) utilize micro fabrication, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and on insulating barrier for the preparation of holding vertical conductive layer 11,12 groove.
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required conductive layer shape the sheet base is exposed, then development, photographic fixing, rear baking, then carve the shape of this conductive layer with ion etching process, and carved free layer and namely stop; Then utilizing glue-dispenser to soak removes photoresist; Can also utilize in case of necessity reactive ion etching machine to assist removes photoresist.
7) utilize ion beam assisted depositing method deposition to carve type Pt as conductive layer, an end thickness of close magnetoresistance effect is 4nm.Namely obtain novel magnetic multilayer film provided by the present invention unit, its top view as shown in Figure 4, when two vertical conductive layers applied voltage, the free layer of its magnetoresistance effect was in the electric field of formation.In the b part of Fig. 4, the flat shape of magnetoresistance effect core cell (being the horizontal cross-section) is oval ring, and vertically the flat shape (being the horizontal cross-section) of conductive layer is for trapezoidal.
Embodiment 11
Present embodiment provides a kind of method of magnetoresistance effect unit of Preparation Example 4, the method comprises the following steps (to need to prove, following step 1 is to prepare a kind of method that unipotential is built structure magnetic multilayer film core cell to 5, and step 1 is to the 5 technology replacements that can build with other known preparation unipotential structure magnetic multilayer film core cell):
1) selects a substrate Si/SiO 2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit successively each layer of magnetoresistance effect, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoPt (3nm)/CoFeB (1nm) is as nailed layer 3, AlO (2nm) is as barrier layer 4, CoFeB (1nm)/CoPt (3nm) as free layer 5 and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: vacuum of the standby end: 1 * 10 -6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate.
2) adopt micro fabrication, with step 1) in deposited magnetoresistance effect and be processed into ellipse, oval major axis is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then then development, photographic fixing, rear baking are carved into oval ring to this magnetoresistance effect with ion etching process.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize magnetron sputtering deposition thickness to be the SiO of 100nm 2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm is as electrode layer, and the micro fabrication that recycling is conventional is processed into electrode shape with electrode layer;
6) utilize the focused-ion-beam lithography method, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and etch be used to holding vertical conductive layer 11 ', 12 ' groove at insulating barrier.
7) utilize ion beam assisted depositing method deposition to carve type Pt as conductive layer 11 ', 12 ', an end thickness of close magnetoresistance effect is 4nm.When two vertical conductive layers applied voltage, the nailed layer of its magnetoresistance effect was in the electric field of formation.
8) utilize micro fabrication and magnetron sputtering deposition insulating barrier with step 7) in conductive layer 11 ', 12 ' isolation, thickness of insulating layer is identical with barrier layer thickness, and then utilize ion beam assisted depositing method deposition wedge shape Pt as conductive layer 11,12, suitable with free layer near an end thickness of magnetoresistance effect free layer.Namely obtain novel magnetic multilayer film provided by the present invention unit, when vertical conductive layer applied voltage, the nailed layer of its magnetoresistance effect and free layer were in the electric field of formation.
Embodiment 12
Present embodiment provides a kind of method of magnetoresistance effect unit of Preparation Example 5, the method comprises the following steps (to need to prove, following step 2 is to 6 being a kind of methods of preparation dual potential barrier structure magnetoresistance effect core cell, and step 2 is to 6 can be with the technology replacement of other known preparation dual potential barrier structure magnetoresistance effect core cell):
1) selects a substrate Si/SiO 2, thick 500 μ m after the conventional method cleaning, utilize the film growth apparatus magnetically controlled sputter method to deposit lower conducting layer Ru, thickness 100nm;
2) utilize magnetically controlled sputter method to deposit SiO at lower conducting layer 2Insulating barrier, thickness 50nm, then deposit successively each layer of magnetoresistance effect, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoFe (4nm) is as nailed layer 3, AlO (1nm) is as barrier layer 4, CoFeB (4nm) is as free layer 5, AlO (1nm) is as barrier layer 4 ', CoFe (4nm) is as nailed layer 3 ', IrMn (12nm) as pinning layer 2 ' and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: vacuum of the standby end: 1 * 10 -6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; And deposition pinning layer 2 and 2 ', nailed layer 3 and 3 ' and during free layer 5, apply the 100Oe flat magnetic field and induce magnetospheric uniaxial anisotropy.
3) adopt micro fabrication, with step 2) in deposited magnetoresistance effect and be processed into ellipse, oval major axis is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then then development, photographic fixing, rear baking are carved into oval ring to this magnetoresistance effect with ion etching process.
4) in step 3) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize magnetron sputtering deposition thickness to be the SiO of 50nm 2Insulating barrier is buried magnetoresistance effect and is isolated;
5) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
6) Cu that utilizes magnetron sputtering deposition thickness 100nm is as electrode layer, and the micro fabrication that recycling is conventional is processed into electrode shape with electrode layer;
7) utilize the SiO of magnetron sputtering deposit thickness 50nm on electrode layer 2As the Cu of insulating barrier and 100nm as top conductive layer.Namely obtain novel magnetic multilayer film provided by the present invention unit, when upper and lower conductive layers applied voltage, its magnetoresistance effect was in the electric field of formation.
Embodiment 13
Present embodiment provides a kind of method of magnetoresistance effect unit of Preparation Example 6, the method comprises the following steps (to need to prove, following step 1 is to 5 being a kind of methods of preparation dual potential barrier structure magnetoresistance effect core cell, and step 1 is to 5 can be with the technology replacement of other known preparation dual potential barrier structure magnetoresistance effect core cell):
1) selects a substrate Si/SiO 2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit successively each layer of magnetoresistance effect, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoPt (4nm)/CoFeB (1nm) is as nailed layer 3, AlO (1nm) is as barrier layer 4, CoFe (1nm) is as free layer 5, AlO (1nm) is as barrier layer 4 ', CoFeB (1nm)/CoPt (3nm) is as nailed layer 3 ', IrMn (12nm) as pinning layer 2 ' and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: vacuum of the standby end: 1 * 10 -6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate.
2) adopt micro fabrication, with step 1) in deposited magnetoresistance effect and be processed into oval ring, oval major axis is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then then development, photographic fixing, rear baking are carved into ellipse to this magnetoresistance effect with ion etching process.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize magnetron sputtering deposition thickness to be the SiO of 50nm 2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm is as electrode layer, and the micro fabrication that recycling is conventional is processed into electrode shape with electrode layer;
6) utilize micro fabrication, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and on insulating barrier for the preparation of holding vertical conductive layer 9,10 groove.
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required conductive layer shape the sheet base is exposed, follow development, photographic fixing, rear baking, then carve the shape of this conductive layer with ion etching process;
7) then the Cu that utilizes magnetron sputtering deposition 100nm removes photoresist by stripping technology as conductive layer.Namely obtain novel magnetic multilayer film provided by the present invention unit, when two vertical conductive layers applied voltage, its magnetoresistance effect was in the electric field of formation.
Embodiment 14
Present embodiment provides a kind of method of magnetoresistance effect unit of Preparation Example 7, the method comprises the following steps (to need to prove, following step 1 is to 5 being a kind of methods of preparation dual potential barrier structure magnetoresistance effect core cell, and step 1 is to 5 can be with the technology replacement of other known preparation dual potential barrier structure magnetoresistance effect core cell):
1) selects a substrate Si/SiO 2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit successively each layer of magnetoresistance effect, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoFe (4nm) is as nailed layer 3, MgO (2nm) is as barrier layer 4, CoFeB (4nm) is as free layer 5, MgO (2nm) is as barrier layer 4, and CoFe (4nm) is as nailed layer 3 ', IrMn (12nm) as pinning layer 2 ' and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: vacuum of the standby end: 1 * 10 -6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; And when deposition pinning layer 2, nailed layer 3 and free layer 5, apply the 100Oe flat magnetic field and induce magnetospheric uniaxial anisotropy.
2) adopt micro fabrication, with step 1) in deposited magnetoresistance effect and be processed into oval ring, oval major axis is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then then development, photographic fixing, rear baking are carved into ellipse to this magnetoresistance effect with ion etching process.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize magnetron sputtering deposition thickness to be the SiO of 100nm 2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm is as electrode layer, and the micro fabrication that recycling is conventional is processed into electrode shape with electrode layer;
6) utilize micro fabrication, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and on insulating barrier for the preparation of holding vertical conductive layer 9,10 groove.
The concrete steps of described micro fabrication are: at first pass through gluing, front baking, again on ultraviolet, deep UV lithography or electron beam exposure apparatus, according to required conductive layer shape the sheet base is exposed, then development, photographic fixing, rear baking, then carve the shape of this conductive layer with ion etching process, and carved free layer and namely stop; Then utilizing glue-dispenser to soak removes photoresist; Can also utilize in case of necessity reactive ion etching machine to assist removes photoresist.
7) utilize ion beam assisted depositing method deposition to carve type Pt as conductive layer, an end thickness of close magnetoresistance effect is 4nm.Namely obtain novel magnetic multilayer film provided by the present invention unit, when two vertical conductive layers applied voltage, the free layer of its magnetoresistance effect was in the electric field of formation.
Above said content; only for the concrete execution mode of the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed in protection scope of the present invention.

Claims (13)

1. magnetoresistance effect unit, comprise magnetoresistance effect core cell and magnetic moment control unit, described multilayer film core cell comprises the interface of free layer, barrier layer and free layer and barrier layer, described magnetic moment control unit comprises two conductive layers, the free layer of described multilayer film core cell is arranged in described two formed electric fields of conductive layer, be filled with insulating barrier between described two conductive layers and the magnetoresistance effect core cell, described barrier layer is made with insulating material.
2. magnetoresistance effect according to claim 1 unit is characterized in that described two conductive layers all are parallel to the face of described magnetoresistance effect core cell.
3. magnetoresistance effect according to claim 1 unit is characterized in that, described two conductive layers are all perpendicular to the face of described magnetoresistance effect core cell.
4. magnetoresistance effect according to claim 3 unit is characterized in that the ratio of the height of described conductive layer and described free layer thickness is 1～1.5.
5. according to claim 1,3 or 4 described magnetoresistance effect unit, it is characterized in that described magnetoresistance effect core cell adopts single Barrier structure; The magnetoresistance effect core cell of single Barrier structure also comprises resilient coating, pinning layer and the nailed layer that is positioned at described free layer downside, and the cover layer that is positioned at described free layer upside, and described barrier layer is positioned at described free layer downside.
6. magnetoresistance effect according to claim 5 unit, it is characterized in that, described magnetic moment control unit also comprises two the second conductive layers, described nailed layer is arranged in described two formed electric fields of the second conductive layer, and the ratio of the height of described nailed layer and described nailed layer thickness is 1～1.5.
7. according to claim 1,3 or 4 described magnetoresistance effect unit, it is characterized in that described multilayer film core cell adopts double potential barrier type structure; Described barrier layer comprises the upper barrier layer that is positioned at described free layer upside and the lower barrierlayer that is positioned at described free layer downside, the magnetoresistance effect core cell of described double potential barrier type also comprises the resilient coating that is positioned at described free layer downside, lower pinning layer and lower nailed layer, and is positioned at nailed layer, upper pinning layer and cover layer on the described free layer upside.
8. magnetoresistance effect according to claim 1 unit is characterized in that, the plane geometric shape of described magnetoresistance effect core cell is ellipse, circle, polygon, annular, oval ring or polygon annular.
9. magnetoresistance effect according to claim 1 unit is characterized in that described conductive layer thickness is 2～200nm, and the making material is Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO 3, LaAlO 3Or CeO 2
10. the preparation method of a magnetoresistance effect claimed in claim 1 unit, the method comprises the following steps:
1) prepares lower conductiving layer at substrate;
2) at described lower conductiving layer preparation magnetoresistance effect core cell, the face of described magnetoresistance effect core cell is parallel with described lower conductiving layer;
3) insulating barrier in the preparation of the top of described magnetoresistance effect core cell, then insulating barrier prepares conductive layer on described.
11. the preparation method of magnetoresistance effect according to claim 10 unit, it is characterized in that described step 2) in, also be included in preparation magnetoresistance effect core cell before, the lower insulating barrier of first preparation is then at the described magnetoresistance effect core cell of described lower insulating barrier preparation.
12. the preparation method of a magnetoresistance effect claimed in claim 1 unit, the method comprises the following steps:
1) at substrate preparation magnetoresistance effect core cell;
2) prepare insulating barrier in the both sides of described preparation magnetoresistance effect core cell, at two vertical conductive layers of described insulating barrier outside preparation, the free layer of described magnetoresistance effect core cell is between described two vertical conductive layers.
13. the magnetic moment of magnetoresistance effect claimed in claim 1 unit upset control method, the method comprises the following steps:
1) obtains the upset critical voltage of described magnetoresistance effect unit;
2) between described two conductive layers, apply the voltage that is not less than described upset critical voltage, realize the magnetic moment upset, namely write operation is carried out in described magnetoresistance effect unit.
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JP2013115400A (en) * 2011-12-01 2013-06-10 Sony Corp Storage element, storage device
CN102645805B (en) * 2012-02-24 2014-08-20 北京京东方光电科技有限公司 Array base plate, preparation method of array base plate and liquid crystal display
KR101446338B1 (en) * 2012-07-17 2014-10-01 삼성전자주식회사 Magnetic device and method of manufacturing the same
CN104777691B (en) * 2015-05-06 2018-01-26 京东方科技集团股份有限公司 Display device and preparation method thereof
CN105633109B (en) * 2015-09-22 2019-04-26 上海磁宇信息科技有限公司 Magnetic RAM memory unit and its read-write and anti-interference method
CN109904291B (en) * 2019-02-13 2021-09-28 湖北大学 Spinning electronic device and preparation method and regulation and control method thereof
CN110527952A (en) * 2019-07-26 2019-12-03 沈阳工业大学 A kind of barium titanate/nickel acid lanthanum ferroelectric superlattice material and preparation method thereof
CN114975767A (en) * 2021-02-25 2022-08-30 华为技术有限公司 Spin wave logic device and related circuit
CN117202765B (en) * 2023-10-26 2024-02-09 北京科技大学 Magnetic multilayer film for reducing spin-orbit moment critical current density and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1385865A (en) * 2002-03-27 2002-12-18 复旦大学 Method for realing vertica anisotropy in magnetic multi-layer film
CN1967891A (en) * 2005-11-15 2007-05-23 中国科学院物理研究所 Magnetic multilayer film with linear magnetoresistance effect and its application
CN101148751A (en) * 2007-11-01 2008-03-26 北京科技大学 Method for increasing metal magnetic multilayer film coercive force
CN101304070A (en) * 2007-05-07 2008-11-12 佳能安内华股份有限公司 Magnetroresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1385865A (en) * 2002-03-27 2002-12-18 复旦大学 Method for realing vertica anisotropy in magnetic multi-layer film
CN1967891A (en) * 2005-11-15 2007-05-23 中国科学院物理研究所 Magnetic multilayer film with linear magnetoresistance effect and its application
CN101304070A (en) * 2007-05-07 2008-11-12 佳能安内华股份有限公司 Magnetroresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus
CN101148751A (en) * 2007-11-01 2008-03-26 北京科技大学 Method for increasing metal magnetic multilayer film coercive force

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