CN1385865A - Method for realing vertica anisotropy in magnetic multi-layer film - Google Patents
Method for realing vertica anisotropy in magnetic multi-layer film Download PDFInfo
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- CN1385865A CN1385865A CN 02111172 CN02111172A CN1385865A CN 1385865 A CN1385865 A CN 1385865A CN 02111172 CN02111172 CN 02111172 CN 02111172 A CN02111172 A CN 02111172A CN 1385865 A CN1385865 A CN 1385865A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 22
- 241001080526 Vertica Species 0.000 title 1
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 19
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000005415 magnetization Effects 0.000 claims abstract description 5
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 8
- 230000003064 anti-oxidating effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000002885 antiferromagnetic material Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 abstract 4
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 230000002950 deficient Effects 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910020708 Co—Pd Inorganic materials 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
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Abstract
本发明是一种用铁磁/反铁磁多层膜中垂直交换偏置产生垂直各向异性的新方法。首先用真空镀膜设备在衬底上制备缓冲层,然后在缓冲层上制备铁磁/反铁磁多层膜,最后在多层膜上覆盖一层保护层。完成制备后,在外磁场中将多层膜样品从高于反铁磁层的奈尔温度冷却到低温,其中外磁场的方向平行于膜面的法线方向,而且足够大使得铁磁层能够在垂直方向饱和磁化。用铁磁/反铁磁多层膜中的垂直交换偏置产生垂直各向异性,这对高密度垂直磁记录及磁光存储等信息技术领域具有重大的应用价值。The present invention is a new method for generating vertical anisotropy by vertical exchange bias in ferromagnetic/antiferromagnetic multilayer films. Firstly, a buffer layer is prepared on the substrate by vacuum coating equipment, then a ferromagnetic/antiferromagnetic multilayer film is prepared on the buffer layer, and finally a protective layer is covered on the multilayer film. After the preparation is completed, the multilayer film sample is cooled from the Neel temperature higher than the antiferromagnetic layer to a low temperature in an external magnetic field, where the direction of the external magnetic field is parallel to the normal direction of the film surface and is large enough to allow the ferromagnetic layer to Saturation magnetization in the vertical direction. The vertical anisotropy is generated by the vertical exchange bias in the ferromagnetic/antiferromagnetic multilayer film, which has great application value in high-density perpendicular magnetic recording and magneto-optical storage and other information technology fields.
Description
Technical field
The invention belongs to the magneto-electronics field, be specifically related to realize in a kind of magnetoresistance effect the method for perpendicular magnetic anisotropy.
Technical background
Exchange biased, be meant ferromagnetic (FM)/antiferromagnetic (AFM) duplicature system is through after the magnetic field cooling, coercive force H
cObviously be enhanced, magnetic hysteresis loop has departed from initial point simultaneously.The FM/AFM duplicature is exchange biased to be that high density magnetic recording is read first-class giant magnetoresistance magnetic field sensor, reached the core texture in the magnetic random memory unit magnetoelectronic devices such as (MRAM).In above-mentioned application, people utilize ferromagnetic/antiferromagnetic duplicature parallel exchange biased.In fact, not only can utilize the enhancing of parallel exchange biased realization intra-face anisotropy, and can utilize vertical exchange biasing (referring to that external magnetic field is all perpendicular to face in the cold-peace measuring process) to improve the perpendicular magnetic anisotropy of vertical film.Although people also do not attempt utilizing the exchange biased face inner membrance that makes to become vertical film, this work may will have very important significance to the high density information field of storage.
Perpendicular magnetic anisotropy is one of necessary condition of high-density magneto-optical storage and high-density perpendicular magnetic recording medium.Produce perpendicular magnetic anisotropy in the past following several method is arranged: (1) some heavy rare earth metal alloy firms present, as Gd-Fe, and Tb-Fe-Co etc.; (2) Co-Pt, Fe-Pt, Co-Pd, Fe-Pd etc. are that the alloy firm of base also has perpendicular magnetic anisotropy with Pd and Pt; (3) utilize shape anisotropy in magnetic recording media, to realize perpendicular magnetic anisotropy; (4) the another kind of method that produces perpendicular magnetic anisotropy is the interface anisotropy of utilizing in magnetic/non magnetic multilayer film.Above-mentioned the whole bag of tricks all has a common defective, has only some specific element combinations could realize perpendicular magnetic anisotropy, and significant limitation is arranged.
Because perpendicular magnetic anisotropy is the necessary condition that realizes high-density perpendicular magnetic recording and magneto-optic storage, therefore seek the new method that realizes the perpendicular magnetic anisotropy in the magnetoresistance effect, to have important potential using value at high-density perpendicular magnetic recording and magneto-optic field of storage, help to promote the development of high-tech areas such as information stores, and might produce huge economic benefits.
Summary of the invention
The objective of the invention is to propose a kind ofly can in magnetoresistance effect, realize the method for perpendicular magnetic anisotropy, and overcome above-mentioned existing methods defective.
The method that realizes perpendicular magnetic anisotropy in the magnetoresistance effect that the present invention proposes is to utilize the vertical exchange biasing in ferromagnetic/antiferromagnetic multilayer film to realize perpendicular magnetic anisotropy, and concrete steps are as follows:
1, on substrates such as glass or silicon, with the vacuum coating method alternating deposit ferromagnetic/inverse ferric magnetosphere constitutes the modulated structure multilayer film, the cycle of rete is 5-100, the thickness of ferromagnetic layer is the 0.1--10 nanometer, inverse ferric magnetosphere thickness is that the 1-99 nanometer does not wait.
2, on multilayer film, cover one deck anti oxidation layer again, so that multilayer film is protected.This anti-oxidation protection layer material can be Cu, SiO
2, Au, Ta etc.
3, then the multilayer film sample is carried out the magnetic field cooling, wherein the direction of external magnetic field is parallel to the normal direction of face, drop to the N that is lower than inverse ferric magnetosphere from the N that is higher than inverse ferric magnetosphere, externally-applied magnetic field needs enough big, makes that the magnetization of ferromagnetic layer can be along the normal direction saturation magnetization.
Before the deposit multilayer film, deposition one layer thickness is the resilient coating of 1--99 nanometer earlier on substrates such as glass or silicon.This cushioning layer material can be various materials, as long as it is exchange biased to make inverse ferric magnetosphere to realize.
Among the present invention, ferromagnetic layer can be Fe, Co, Ni, rare earth metal and alloy thereof, and inverse ferric magnetosphere can be variously can have exchange biased antiferromagnet; Cushioning layer material can be Cu, Ta, Cr etc., and the selection of resilient coating is mainly decided according to anti-magnetosphere material.Vacuum coating method can be common magnetically controlled sputter method etc.
The vertical exchange biasing of the present invention utilizes ferromagnetic/antiferromagnetic multilayer film, make face inner membrance originally become vertical film, it is fit to all ferromagnetic/antiferromagnetic systems, be suitable for all ferrimagnets, has very large selectivity, can remedy deficiency and defective on the previous methods, so this invention there have been essential difference and qualitative leap.This will have great potential using value to area information storages such as high-density perpendicular magnetic recording and magneto-optic storages.
Description of drawings
Fig. 1, [Fe has been described
19Ni
81(2.0nm)/CoO (4.0nm)]
40Multilayer film is through the magnetic hysteresis loop of cooling back, magnetic field in low temperature and room temperature.
Fig. 2, [Fe has been described
19Ni
81(2.0nm)/CoO (4.0nm)]
40Multilayer film changes along with variation of temperature through cooling back, magnetic field coercive force.
Fig. 3, [Fe has been described
19Ni
81(2.0nm)/Fe
50Mn
50(4.0nm)]
40Multilayer film is through the magnetic hysteresis loop of cooling back, magnetic field under different temperatures.
Embodiment
The invention is further illustrated by the following examples.
Embodiment 1, Fe
19Ni
81/ CoO multilayer film
The magnet layer adopts Fe, Ni alloy Fe
19Ni
81, anti-magnet layer adopts the CoO material, and cushioning layer material adopts Cu, and backing material adopts the Si sheet, and anti oxidation layer adopts the Cu material, and the multifunctional magnetic control sputtering equipment that computerizeds control prepares Fe
19Ni
81/ CoO, wherein Fe
19Ni
81Layer thickness is 2.0nm, and the CoO layer thickness is 4.0nm, and periodicity is 40, and buffer layer thickness is 30.0nm.The concrete structure of sample is Si/Cu (30nm)/[Fe
19Ni
81/ CoO]
40/ Fe
19Ni
81/ Cu (30.0nm).The multilayer film sample is placed in the outfield, and temperature drops to low temperature from room temperature, and to carry out the field cold, and the size in its centre field is 790kA/m, and direction is parallel to the normal direction of face.With superconducting quantum interference device (SQUID) measuring vertical in the magnetic hysteresis loop of face.Shown in figure (1), the magnetic hysteresis loop of sample vertical direction is very oblique during room temperature, and remanence ratio is zero.This shows that sample is the face inner membrance when room temperature.When low temperature, great changes have taken place in the magnetic hysteresis loop of vertical direction, and the remanence ratio of magnetic hysteresis loop and coercive force all constantly increase.This perpendicular magnetic anisotropy that shows multilayer film can constantly increase, very near vertical film.Figure (2) has provided Fe
19Ni
81(2.0nm)/coercive force of CoO (4.0nm) multilayer film vertical direction under different temperatures increases along with the reduction of temperature.This explanation is at Fe
19Ni
81(2.0nm)/CoO (4.0nm) multilayer film in the magnetic field cooling of vertical direction caused perpendicular magnetic anisotropy.
The magnet layer material adopts Fe, Ni alloy Fe
19Ni
81, anti-magnet layer material adopts Fe, Mn alloy Fe
50Mn
50, resilient coating adopts Cu, and substrate adopts the Si sheet, and anti oxidation layer adopts Cu.The multifunctional magnetic control sputtering equipment that computerizeds control prepares Fe
19Ni
81/ Fe
50Mn
50Multilayer film, wherein Fe
19Ni
81Layer thickness is 2.0nm, and the FeMn layer thickness is 4.0nm, and periodicity is 40, and buffer layer thickness is 30.0nm.The concrete structure of sample is Si/Cu (30nm)/[Fe
19Ni
81/ Fe
50Mn
50]
40/ Fe
19Ni
81(2.0nm)/Cu (30.0nm).With Fe
19Ni
81/ Fe
50Mn
50The multilayer film sample is placed in the outfield temperature and drops to low temperature from room temperature to carry out the field cold, and the size in outfield is 790kA/m, and direction is parallel to the normal direction of face.With superconducting quantum interference device (SQUID) measuring vertical in the magnetic hysteresis loop of face.Figure (3) provides Fe respectively
19Ni
81(2.0nm)/Fe
50Mn
50(3.0nm) magnetic hysteresis loop of multilayer film vertical direction under different temperatures.The remanence ratio of vertical direction and coercive force strengthen with the reduction of temperature.This explanation is at Fe
19Ni
81(2.0nm)/Fe
50Mn
50(4.0nm) cooling of the magnetic field of vertical direction has caused perpendicular magnetic anisotropy in the multilayer film.Illustrate that perpendicular magnetic anisotropy derives from the vertical exchange biasing.
Claims (6)
1, a kind of method that in magnetoresistance effect, realizes perpendicular magnetic anisotropy, it is characterized in that utilizing the vertical exchange biasing in ferromagnetic/antiferromagnetic multilayer film to realize perpendicular magnetic anisotropy, concrete steps are as follows: on the substrate of glass or silicon, with the vacuum coating method alternating deposit ferromagnetic/inverse ferric magnetosphere constitutes the modulated structure multilayer film, the periodicity of rete is 5-100, the thickness of ferromagnetic layer is the 0.1--10 nanometer, and inverse ferric magnetosphere thickness is the 1-99 nanometer; On multilayer film, cover one deck anti oxidation layer again; Then the multilayer film sample is carried out the magnetic field cooling, wherein the direction of external magnetic field is parallel to the normal direction of face, drop to the N that is lower than inverse ferric magnetosphere from the N that is higher than inverse ferric magnetosphere, externally-applied magnetic field need make that the magnetization of ferromagnetic layer can be along the normal direction saturation magnetization.
2, the method that in magnetoresistance effect, realizes perpendicular magnetic anisotropy according to claim 1, it is characterized in that before the deposit multilayer film, deposition one layer thickness is the resilient coating of 1-99 nanometer earlier on substrate, and resilient coating adopts and can make anti-magnet layer realize exchange biased material.
3, the method that realizes perpendicular magnetic anisotropy in magnetoresistance effect according to claim 1 is characterized in that described magnet layer is Fe, Co, Ni, rare earth metal and alloy thereof.
4, the method that realizes perpendicular magnetic anisotropy in magnetoresistance effect according to claim 1 is characterized in that described anti-magnet layer is for can exist exchange biased anti-ferromagnetic material.
5, the method that realizes perpendicular magnetic anisotropy in magnetoresistance effect according to claim 1 is characterized in that the resilient coating employing makes anti-magnet layer can realize exchange biased material, is specially a kind of of Cu, Au, Ag, Ta and Cr.
6, the method that realizes perpendicular magnetic anisotropy in magnetoresistance effect according to claim 1 is characterized in that anti oxidation layer adopts Cu, SiO
2, Au, Ta a kind of.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02111172 CN1252742C (en) | 2002-03-27 | 2002-03-27 | Method for realing vertica anisotropy in magnetic multi-layer film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02111172 CN1252742C (en) | 2002-03-27 | 2002-03-27 | Method for realing vertica anisotropy in magnetic multi-layer film |
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| Publication Number | Publication Date |
|---|---|
| CN1385865A true CN1385865A (en) | 2002-12-18 |
| CN1252742C CN1252742C (en) | 2006-04-19 |
Family
ID=4741433
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|---|---|---|---|
| CN 02111172 Expired - Fee Related CN1252742C (en) | 2002-03-27 | 2002-03-27 | Method for realing vertica anisotropy in magnetic multi-layer film |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100369121C (en) * | 2005-03-28 | 2008-02-13 | 中国科学院物理研究所 | A kind of magnetic recording medium based on FePt magnetic layer and preparation method thereof |
| CN1784610B (en) * | 2003-03-14 | 2010-06-02 | S.N.R.鲁尔门斯公司 | Magnetoresistive Sensor Containing Ferromagnetic/Antiferromagnetic Sensitive Element and Its Use |
| CN101762685A (en) * | 2008-12-24 | 2010-06-30 | 复旦大学 | Biosensor and preparation method thereof |
| CN102082018B (en) * | 2009-11-26 | 2013-10-16 | 中国科学院物理研究所 | Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof |
| CN104347796A (en) * | 2013-08-02 | 2015-02-11 | 三星电子株式会社 | Magnetic memory devices having a perpendicular magnetic tunnel junction |
| CN108117390A (en) * | 2017-12-29 | 2018-06-05 | 江西理工大学 | Rare Earth Oxides Ceramic Materials with exchange biased reversion and preparation method thereof |
| CN109346597A (en) * | 2018-09-12 | 2019-02-15 | 电子科技大学 | A kind of preparation method of self-biased anisotropic magnetoresistance sensing unit |
-
2002
- 2002-03-27 CN CN 02111172 patent/CN1252742C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1784610B (en) * | 2003-03-14 | 2010-06-02 | S.N.R.鲁尔门斯公司 | Magnetoresistive Sensor Containing Ferromagnetic/Antiferromagnetic Sensitive Element and Its Use |
| CN100369121C (en) * | 2005-03-28 | 2008-02-13 | 中国科学院物理研究所 | A kind of magnetic recording medium based on FePt magnetic layer and preparation method thereof |
| CN101762685A (en) * | 2008-12-24 | 2010-06-30 | 复旦大学 | Biosensor and preparation method thereof |
| CN102082018B (en) * | 2009-11-26 | 2013-10-16 | 中国科学院物理研究所 | Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof |
| CN104347796A (en) * | 2013-08-02 | 2015-02-11 | 三星电子株式会社 | Magnetic memory devices having a perpendicular magnetic tunnel junction |
| US9859333B2 (en) | 2013-08-02 | 2018-01-02 | Samsung Electronics Co., Ltd. | Magnetic memory devices having a perpendicular magnetic tunnel junction |
| CN104347796B (en) * | 2013-08-02 | 2018-10-16 | 三星电子株式会社 | Magnetic memory apparatus with vertical magnetic tunnel-junction |
| CN108117390A (en) * | 2017-12-29 | 2018-06-05 | 江西理工大学 | Rare Earth Oxides Ceramic Materials with exchange biased reversion and preparation method thereof |
| CN109346597A (en) * | 2018-09-12 | 2019-02-15 | 电子科技大学 | A kind of preparation method of self-biased anisotropic magnetoresistance sensing unit |
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| Publication number | Publication date |
|---|---|
| CN1252742C (en) | 2006-04-19 |
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