CN113903855A - Method for improving overturning efficiency of spin orbit torque of multilayer film structure, magnetic tunnel junction and magnetic random access memory - Google Patents
Method for improving overturning efficiency of spin orbit torque of multilayer film structure, magnetic tunnel junction and magnetic random access memory Download PDFInfo
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Abstract
The invention relates to a method for improving the overturning efficiency of a spin orbit torque of a multilayer film structure, the multilayer film structure, a magnetic tunnel junction and a magnetic random access memory. The method is to arrange a first metal insertion layer between a ferromagnetic layer and an oxide layer of a multilayer film structure to enhance the spin-orbit coupling strength of the interface. The present invention also provides a multilayer film structure including a non-ferromagnetic layer, a first metal insertion layer, and an oxide layer. The invention also provides a magnetic tunnel junction, which comprises a non-ferromagnetic layer, a first metal insertion layer, a barrier layer and a second ferromagnetic layer; or a non-ferromagnetic layer, a second metal layer, a first ferromagnetic layer, a first metal insertion layer, a barrier layer, a second ferromagnetic layer. The invention also provides a magnetic random access memory containing the multilayer film structure or the magnetic tunnel junction. The invention utilizes the oxidation engineering effect to change the interface of the non-ferromagnetic layer and the ferromagnetic layer by inserting the ultrathin metal so as to enhance the spin-orbit coupling effect of the interface and improve the overturning efficiency.
Description
Technical Field
The invention relates to the technical field of magnetic random access memories, in particular to a method for improving the overturning efficiency of a spin orbit torque of a multilayer film structure, the multilayer film structure, a magnetic tunnel junction and a magnetic random access memory.
Background
With the continuous development of Complementary Metal Oxide Semiconductor (CMOS) technology, conventional Semiconductor-based memories encounter a power consumption bottleneck, which inevitably generates a large static power consumption due to leakage current. Magnetic Random Access Memory (MRAM) with non-volatility, high performance, low power consumption is considered an efficient and promising solution. In addition, the memory has good compatibility with the CMOS subsequent process, so that the memory can be applied to a traditional computer storage system and can be expanded to other emerging computing fields, such as deep learning, probability computing and the like. The basic memory cell in a Magnetic random access memory is called a Magnetic Tunnel Junction (MTJ), and is composed of two ferromagnetic layers sandwiching a tunneling barrier layer. One of the ferromagnetic layers is called the reference layer, and its magnetization direction is unchanged; the other ferromagnetic layer is called a free layer, and the magnetization direction is parallel or antiparallel to the reference layer, thereby realizing the low resistance state and the high resistance state of the magnetic tunnel junction, which can be represented by binary numbers "0" and "1".
At present, the mainstream writing method of the magnetic random access memory is as follows: Spin-Transfer Torque (STT) and Spin-Orbit Torque (SOT). The spin-orbit torque is formed by adding a non-ferromagnetic layer below a ferromagnetic layer, inputting charge flow to the non-ferromagnetic layer, generating spin flow in the non-ferromagnetic layer through a spin-orbit coupling effect, and enabling the magnetic moment in the ferromagnetic layer to achieve the purpose of magnetic reversal by utilizing the induced spin-orbit torque. Compared with spin transfer torque, spin orbit torque has the advantages of higher speed, higher durability, lower power consumption and the like, and the magnetic switching can be realized in the range of nanosecond or even subnanosecond.
At present, there are two methods for improving the spin orbit torque overturning efficiency: one is to improve the switching efficiency by controlling the resistivity of the non-ferromagnetic layer, and the other is to insert an ultra-thin light metal layer between the non-ferromagnetic layer and the ferromagnetic layer to modify the effect of interface spin transparency, thereby enhancing spin injection. However, the above control method has a single advantage in that power consumption is increased due to joule heat when a high-resistance material is introduced. Furthermore, it is often difficult to avoid oxidation of the ferromagnetic layer material during sputter growth, which oxidation results primarily from the energetic oxygen ions of the oxide layer during sputtering, and from oxygen migration after annealing. Therefore, there is a large difference compared to an ideal interface. In view of this, it is important to provide a method for improving the spin-orbit torque switching efficiency of the magnetic memory.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to provide a method for effectively improving the spin-orbit torque switching efficiency, in which an ultra-thin metal is inserted between a ferromagnetic layer and an oxide layer, and the interface spin-orbit coupling strength is enhanced by using the oxidation engineering effect, thereby further improving the switching efficiency.
In order to achieve the above object, the present invention provides a method for improving the flip efficiency of spin-orbit torque of a multilayer film structure, wherein the method comprises disposing a first metal insertion layer between a ferromagnetic layer and an oxide layer of the multilayer film structure to enhance the interface spin-orbit coupling strength, so as to improve the flip efficiency of the spin-orbit torque; wherein the thickness of the first metal insertion layer is 0.01-0.8 nm.
According to a specific embodiment of the present invention, preferably, when the multilayer film structure further includes a non-ferromagnetic layer, a second metal layer may be disposed between the non-ferromagnetic layer and the ferromagnetic layer, wherein the thickness of the second metal layer is 0.01 to 0.8 nm.
According to the specific embodiment of the present invention, preferably, the ferromagnetic layer, the non-ferromagnetic layer, the first metal insertion layer, and the second metal layer may be grown by a magnetron sputtering technique, a molecular beam epitaxy method, or an atomic layer deposition method.
In the method, the ultrathin metal is inserted between the ferromagnetic layer and the oxide layer, and the interface effect is enhanced by using the oxidation engineering effect, so that the turnover efficiency is improved.
According to a specific embodiment of the present invention, the material of the first metal insertion layer may be selected from one or a combination of two or more of Mg, Ti, Al, Hf; preferably Mg.
According to a specific embodiment of the present invention, the material of the second metal layer may be selected from one or a combination of two or more of Mg, Ti, Al, Hf; preferably Ti.
According to a specific embodiment of the present invention, preferably, the thickness of the non-ferromagnetic layer is 0.1 to 20 nm.
According to a specific embodiment of the present invention, preferably, the ferromagnetic layer has a thickness of 0.2 to 20 nm.
According to a particular embodiment of the invention, preferably, the thickness of the oxide layer is between 0 and 3.5 nm.
According to a particular embodiment of the present invention, it is further preferred that the thickness of the non-ferromagnetic layer is 5-15nm, such as 10 nm.
According to a particular embodiment of the present invention, it is further preferred that the thickness of the ferromagnetic layer is 0.5-2nm, such as 1.2 nm.
According to a particular embodiment of the present invention, it is further preferred that the thickness of the oxide layer is 2-3nm, such as 2.5 nm.
According to a specific embodiment of the present invention, the material of the ferromagnetic layer may be selected from one or a combination of two or more of CoFeB, FeB, CoFe. Wherein the CoFeB may comprise Co20Fe60B20，Co40Fe40B20Or Co60Fe20B20And the like, wherein the numbers represent percentages of elements, but are not limited to the ratios of the elements described herein. Preferably, theCoFeB is Co20Fe60B20. The FeB may comprise Fe80B20And the like, wherein the numbers represent percentages of elements, but are not limited to the ratios of the elements described herein. The CoFe may comprise Co50Fe50，Co20Fe80Or Co80Fe20And the like, wherein the numbers represent percentages of elements, but are not limited to the ratios of the elements described herein.
According to some embodiments of the present invention, the ferromagnetic layer material may be a combination of a plurality of the above ferromagnetic materials, and some non-magnetic intercalation, i.e., ultra-thin metal layers that can act as metal insertion layers, may exist between the plurality of ferromagnetic materials.
According to a particular embodiment of the invention, the material of the oxide layer may be selected from MgO, Al2O3，MgAl2O4One or a combination of two or more of them; MgO is preferred.
According to a specific embodiment of the present invention, the material of the non-ferromagnetic layer may be selected from one or a combination of two or more of heavy metal materials or topological insulating materials, preferably a strong spin orbit coupling material. Wherein, the heavy metal material is preferably selected from one or the combination of more than two of Ta, Pt, W, Ir and Mo; more preferably Ta. The topological insulating material is preferably selected from Bi2Se3，Bi2Te3，BixSb1-x，Sb2Te3And (Bi)xSb1-x)2Te3Wherein Bi is selected from the group consisting ofxSb1-xX in (3) may be about 0.9; said (Bi)xSb1-x)2Te3The value of x in (1) is in the range of about 0 to about 1.
The invention also provides the application of the method for improving the overturning efficiency of the multi-layer film structure spin orbit torque in the preparation of an electronic device with a multi-layer film structure; preferably, the electronic device is a magnetic random access memory device.
According to some embodiments of the invention, the application comprises growing a multilayer thin film on silicon oxide, and further preparing the electronic device by a micro-nano processing operation method.
According to some embodiments of the invention, each layer of material is grown on a substrate or other multilayer films in the order from bottom to top, and then the device is prepared by a traditional micro-nano processing technology, and the cross-sectional area of each film layer is basically equal.
The present invention also provides a multilayer film structure including a non-ferromagnetic layer, a first metal insertion layer, and an oxide layer, which are sequentially disposed. The multilayer film structure can be prepared in a conventional manner, the non-ferromagnetic layer can be arranged on a suitable substrate material, and the materials and thicknesses of the non-ferromagnetic layer, the first metal insertion layer and the oxide layer can adopt the materials and thicknesses given above.
The invention also provides a magnetic tunnel junction, which comprises a non-ferromagnetic layer, a first metal insertion layer, a barrier layer (namely an oxide layer) and a second ferromagnetic layer which are sequentially arranged; or comprises a non-ferromagnetic layer, a second metal layer, a first ferromagnetic layer, a first metal insertion layer, a barrier layer and a second ferromagnetic layer which are arranged in sequence. The magnetic tunnel junction can be prepared in a conventional manner, the non-ferromagnetic layer can be arranged on a suitable substrate material, and the materials and thicknesses of the non-ferromagnetic layer, the first metal insertion layer, the barrier layer and the second metal layer can be the materials and thicknesses given above.
The invention also provides a magnetic random access memory which comprises the magnetic tunnel junction.
The invention adopts the mode of inserting the ultrathin metal between the ferromagnetic layer and the oxide layer and inserting the ultrathin metal between the non-ferromagnetic layer and the ferromagnetic layer and between the ferromagnetic layer and the oxide layer, changes the thickness of the ultrathin metal insertion layer, utilizes the oxidation engineering effect to change the interface spin orbit coupling effect between the non-ferromagnetic layer and the ferromagnetic layer, improves the turnover efficiency, has simple structure and simple and convenient operation, and is beneficial to the production and application of the magnetic memory device.
Drawings
Fig. 1 is a schematic structural view of a multilayer film structure of example 1.
Fig. 2 is a graph of the variation of magnetization with thickness of the magnesium insertion layer for the multilayer film structure of example 1.
Fig. 3 is a graph of spin orbit torque switching efficiency versus thickness of a magnesium insertion layer for the multilayer film structure of example 1.
FIG. 4 is a schematic view of a magnetic tunnel junction of the magnetic memory of embodiment 2.
FIG. 5 is a schematic view of a magnetic tunnel junction of the magnetic memory of embodiment 3.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
This example 1 provides a multilayer film structure, the structure of which is shown in fig. 1. The multilayer film structure comprises a non-ferromagnetic layer, a first metal insertion layer and an oxide layer which are sequentially arranged; wherein:
the non-ferromagnetic layer is made of Ta and has a thickness of 10 nm;
the material of the ferromagnetic layer being Co20Fe60B20The thickness is 1.2 nm;
the material of the first metal insertion layer (ultrathin metal insertion layer) was Mg, and the thickness was 0.6 nm;
the material of the oxide layer was MgO, with a thickness of 3.5 nm.
In the embodiment, a magnetron sputtering technology is combined with a material characterization means, growth conditions are optimized, a non-ferromagnetic layer, a ferromagnetic layer, an ultrathin metal insertion layer and an oxide layer are sequentially grown on a silicon oxide substrate through preparation of a high-quality film, and the vertical magnetic anisotropy of the film is realized at room temperature.
The multilayer film structure provided in this example was prepared by the following steps:
ultrasonically cleaning a wafer by adopting acetone, ethanol and deionized water, depositing a metal layer material by utilizing direct current sputtering of a magnetron sputtering technology, and depositing an oxide layer material by radio frequency sputtering; the deposition time of each layer of material is closely calibrated to control the sputtering rate, preferably, the rate of Ta is
Co20Fe60B20At a rate of
A rate of Mg of
Rate of MgO is
The micron-sized Hall bar can be prepared by patterning the film by adopting a photoetching technology, an electron beam evaporation technology, a stripping technology and the like. In sputter growth, it is often difficult to avoid Co20Fe60B20Oxidation, which is mainly due to high-energy oxygen ions of the MgO layer during sputtering, and oxygen migration caused after annealing. Therefore, at Co compared to the ideal interface20Fe60B20Co formation at the/MgO interface20Fe60B20Oxides, may yield relatively small values of interfacial magnetic anisotropy. The ultra-thin metal layer insertion layer (Mg layer) can effectively control the migration of oxygen atoms. Meanwhile, the proper amount of oxygen atoms can enhance the interface spin-orbit coupling strength of the interface of the non-ferromagnetic layer and the ferromagnetic layer. Further, a proper amount of oxygen atoms can enhance spin-orbit torque flip efficiency. In addition, the perpendicular magnetic anisotropy of the multilayer thin film can be similarly improved in the process of controlling the migration of oxygen atoms. Fig. 2 and 3 are graphs showing the variation of magnetization and spin-orbit torque switching efficiency with the thickness of the magnesium insertion layer, as can be seen from fig. 2 and 3: by adding Mg insertion layer, magnetization and spin orbit can be improvedThe torque overturning efficiency and the improvement of the spin orbit torque overturning efficiency can also indicate that the interface spin orbit coupling strength is enhanced.
Example 2
The present embodiment provides a magnetic memory including a magnetic tunnel junction having a structure as shown in fig. 4.
The magnetic tunnel junction comprises a non-ferromagnetic layer, a first metal insertion layer, a barrier layer and a second ferromagnetic layer which are grown on a silicon substrate from bottom to top in sequence; wherein:
the non-ferromagnetic layer is made of Ta and has a thickness of 10 nm;
the material of the first ferromagnetic layer is Co20Fe60B20The thickness is 1.2 nm;
the material of the first metal insertion layer (ultrathin metal insertion layer) was Mg, and the thickness was 0.6 nm;
the barrier layer is made of MgO and has the thickness of 1 nm;
the material of the second ferromagnetic layer is Co20Fe60B20The thickness is 1 nm.
In this embodiment, a magnetron sputtering technique is used to prepare a thin film, a non-ferromagnetic layer, a first ferromagnetic layer, an insertion layer, a barrier layer, and a second ferromagnetic layer are sequentially grown on a silicon substrate from bottom to top, and finally, processing such as photolithography and etching is performed, so that the cross-sectional area is circular.
The ultra-thin metal insertion layer adopted by the embodiment can effectively control the migration of oxygen atoms, and further realize the efficient magnetic moment overturning. The invention also has the characteristic of strong perpendicular magnetic anisotropy, can improve the thermal stability and ensure the reliability of data reading.
Example 3
The present embodiment provides a magnetic memory including a magnetic tunnel junction having a structure as shown in fig. 5.
The magnetic tunnel junction comprises a non-ferromagnetic layer, a second insertion layer, a first ferromagnetic layer, a first insertion layer, a barrier layer and a second ferromagnetic layer which are grown on a silicon substrate in sequence from bottom to top; wherein:
the non-ferromagnetic layer is made of Ta and has a thickness of 10 nm;
the material of the second insertion layer is Ti, and the thickness is 2 nm;
the material of the first ferromagnetic layer is Co20Fe60B20The thickness is 1.2 nm;
the material of the first insertion layer is Mg, and the thickness is 0.6 nm;
the barrier layer is made of MgO and has the thickness of 1 nm;
the material of the second ferromagnetic layer is Co20Fe60B20The thickness is 1 nm.
In this embodiment, a magnetron sputtering technique is used to prepare a thin film, a non-ferromagnetic layer, a second insertion layer, a first ferromagnetic layer, a first insertion layer, a barrier layer, and a second ferromagnetic layer are sequentially grown on a silicon substrate from bottom to top, and finally, processing such as photolithography and etching is performed, so that the cross-sectional area is circular.
The second insertion layer (Ti layer) of the present embodiment provides Co20Fe60B20The first insertion layer can effectively control the migration of oxygen atoms, and further realize the efficient magnetic moment overturning. The first insertion layer and the second insertion layer further improve the thermal stability of the magnetic memory and ensure the reliability of data reading.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for improving the flip efficiency of the spin-orbit torque of a multilayer film structure is characterized in that a first metal insertion layer is arranged between a ferromagnetic layer and an oxide layer of the multilayer film structure to enhance the interface spin-orbit coupling strength, and the thickness of the first metal insertion layer is 0.01-0.8 nm.
2. The method of claim 1, wherein the multilayer film structure further comprises a non-ferromagnetic layer, a second metal layer is disposed between the non-ferromagnetic layer and the ferromagnetic layer, and the second metal layer has a thickness of 0.01-0.8 nm.
3. The method according to claim 1 or 2, wherein the material of the first metal insertion layer is selected from one or a combination of two or more of Mg, Ti, Al, Hf; preferably Mg;
the material of the second metal layer is selected from one or the combination of more than two of Mg, Ti, Al and Hf; preferably Mg.
4. The method of claim 1 or 2, wherein the ferromagnetic layer has a thickness of 0.2-20 nm;
preferably, the material of the ferromagnetic layer is selected from one or a combination of more than two of CoFeB, FeB and CoFe;
preferably, the CoFeB comprises Co20Fe60B20，Co40Fe40B20Or Co60Fe20B20(ii) a More preferably Co20Fe60B20；
Preferably, the FeB comprises Fe80B20；
Preferably, the CoFe comprises Co50Fe50，Co20Fe80Or Co80Fe20。
5. The method of claim 1 or 2, wherein the oxide layer has a thickness of 0.01-3.5 nm;
preferably, the material of the oxide layer is selected from MgO, Al2O3，MgAl2O4One or a combination of two or more of them; more preferably MgO.
6. The method of claim 2, wherein the non-ferromagnetic layer has a thickness of 0.1-20 nm;
preferably, the material of the non-ferromagnetic layer is selected from one or a combination of two or more of heavy metal materials or topological insulating materials;
preferably, the heavy metal material is selected from one or a combination of more than two of Ta, Pt, W, Ir and Mo; more preferably Ta;
preferably, the topological insulating material is selected from Bi2Se3，Bi2Te3，BixSb1-x，Sb2Te3And (Bi)xSb1-x)2Te3One or a combination of two or more of them;
more preferably, the BixSb1-xX in (1) is 0.9;
more preferably, the (Bi)xSb1-x)2Te3The value of x in (1) is in the range of 0 to 1.
7. Use of the process of any one of claims 1-6 for the manufacture of an electronic device having a multilayer film structure; preferably, the electronic device is a magnetic random access memory device.
8. A multilayer film structure includes a non-ferromagnetic layer, a first metal insertion layer, and an oxide layer, which are sequentially disposed.
9. A magnetic tunnel junction comprises a non-ferromagnetic layer, a first metal insertion layer, a barrier layer and a second ferromagnetic layer which are arranged in sequence; or comprises a non-ferromagnetic layer, a second metal layer, a first ferromagnetic layer, a first metal insertion layer, a barrier layer and a second ferromagnetic layer which are arranged in sequence.
10. A magnetic random access memory containing the multilayer film structure of claim 8 or the magnetic tunnel junction of claim 9.
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| CN114927543A (en) * | 2022-06-20 | 2022-08-19 | 致真存储(北京)科技有限公司 | Spin orbit torque magnetic memory and preparation method thereof |
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| CN114927543A (en) * | 2022-06-20 | 2022-08-19 | 致真存储(北京)科技有限公司 | Spin orbit torque magnetic memory and preparation method thereof |
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