CN106664804A - 连接体及连接体的制造方法 - Google Patents
连接体及连接体的制造方法 Download PDFInfo
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- CN106664804A CN106664804A CN201580035591.9A CN201580035591A CN106664804A CN 106664804 A CN106664804 A CN 106664804A CN 201580035591 A CN201580035591 A CN 201580035591A CN 106664804 A CN106664804 A CN 106664804A
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K2201/09409—Multiple rows of pads, lands, terminals or dummy patterns; Multiple rows of mounted components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Wire Bonding (AREA)
- Liquid Crystal (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明容易判定是否在凸块与电极之间适度地压溃导电性粒子。一种连接体(1),其为具备电路基板(12)和电子部件(18)、且通过排列有导电性粒子(4)的各向异性导电粘接剂(1)将电子部件(18)连接至电路基板(12)上的连接体(1),该电路基板(12)是排列有多个端子(21)的端子列(22)在与端子(21)的排列方向正交的宽度方向上并置多列的电路基板(12),该电子部件(18)是排列有多个凸块(25)的凸块列(26)在与凸块(25)的排列方向正交的宽度方向上、与多列端子列(22)对应地并置多列的电子部件(18),在电路基板(12)和电子部件(18)的各自外侧排列的相对置的端子(21)与凸块(25)的距离大于在各自内侧排列的相对置的端子(21)与凸块(25)的距离。
Description
技术领域
本发明涉及电子部件与电路基板连接而成的连接体,特别是涉及通过含有导电性粒子的粘接剂而将电子部件连接于电路基板而成的连接体以及连接体的制造方法。
本申请以2014年7月22日在日本申请的日本专利申请号特愿2014-149298和2014年11月28日在日本申请的日本专利申请号特愿2014-242270作为基础而要求优先权,这些申请通过参照而援用到本申请中。
背景技术
一直以来,作为电视和/或PC显示器、移动电话和/或智能电话、便携式游戏机、平板终端和/或可穿戴终端、或车载用显示器等各种显示手段,使用了液晶显示装置、有机EL面板。近年来,在这样的显示装置中,从细间距化、轻量薄型化等观点考虑,采用:使用各向异性导电膜(ACF:Anisotropic Conductive Film),将驱动用IC直接安装在显示面板的玻璃基板上的方法;将形成有驱动电路等的柔性基板直接安装于玻璃基板的方法。
在安装IC、柔性基板的玻璃基板上,形成多个由ITO(氧化铟锡)等形成的透明电极,在该透明电极上连接IC、柔性基板等电子部件。与玻璃基板连接的电子部件在安装面上与透明电极对应地形成多个电极端子,并通过各向异性导电膜而被热压接在玻璃基板上,从而连接电极端子与透明电极。
各向异性导电膜是在粘合剂树脂中混入导电性粒子并制成膜状而得到的材料,通过将其在2个导体间加热压接而利用导电性粒子取得导体间的电导通,利用粘合剂树脂保持导体间的机械连接。作为构成各向异性导电膜的粘接剂,通常,使用可靠性高的热固性的粘合剂树脂,但也可以为光固化性的粘合剂树脂或光热并用型的粘合剂树脂。
在通过这样的各向异性导电膜而将电子部件与透明电极连接的情况下,首先,在玻璃基板的透明电极上通过暂时压接手段暂时粘贴各向异性导电膜。接着,隔着各向异性导电膜而在玻璃基板上搭载电子部件并形成暂时连接体后,通过热压接头等热压接手段将电子部件与各向异性导电膜一起向透明电极侧加热推压。通过该热压接头的加热,使各向异性导电膜发生热固化反应,由此电子部件被粘接在透明电极上。
现有技术文献
专利文献
专利文献1:日本专利第4789738号公报
专利文献2:日本特开2004-214374号公报
专利文献3:日本特开2005-203758号公报
发明内容
发明所要解决的问题
关于这种类型的COG连接所使用的IC芯片50,例如如图10(A)所示,在对玻璃基板56的安装面,形成有输入凸块51沿着一个侧缘50a以一列排列的输入凸块区域52,并且设置有输出凸块53沿着与一个侧缘50a对置的另一个侧缘50b以二列交错状排列的输出凸块区域54。凸块的排列根据IC芯片的种类而为各种各样,但一般而言对于带有凸块的IC芯片而言,与输入凸块51的数目相比输出凸块53的数目多,与输入凸块区域52的面积相比输出凸块区域54的面积大,此外输入凸块51的形状比输出凸块53的形状形成得大。
此外,带有凸块的IC芯片50通过在对置的一对侧缘的一侧形成输入凸块51,在另一侧形成输出凸块53,从而隔开,在中央部具有不形成凸块的区域。
此外,对于IC芯片50,输入凸块51与输出凸块53的各凸块排列和大小不同,在安装面中不对称地配置。而且,在例如智能电话等的各种液晶显示面板所使用的驱动用IC等IC芯片中,有随着高像素化进展,与各像素对应的输出信号也增加、输出凸块也增加的倾向,还提出了在一个侧缘形成的输入凸块51以一列排列,与此相对,在另一个侧缘形成的输出凸块53以两列或三列以上排列的设计。
进一步,随着近年来的智能电话、平板终端、可穿戴终端等移动设备的小型化、薄型化的进展,IC芯片50也设计成宽度宽并且为薄型,输入输出凸块间的区域扩大,因此对于面方向的推压,凸块间区域容易变形。
因此,如图10(B)所示,对于IC芯片50,如果与电路基板56连接时被热压接头58加热推压,则在没有形成输入凸块51、输出凸块53的中央的凸块间区域中进行各向异性导电膜55的粘合剂树脂的排除,发生挠曲(图11)。其结果是,对于IC芯片50,在基板的外侧缘形成的输出凸块53b与在基板的内侧形成的输出凸块53a相比,成为从玻璃基板56的透明电极57浮起的状态,对导电性粒子60的推压力变弱,产生连接不良的担忧。
因此,从提高生产率的观点考虑,也进行了:通过连接后的检查工序,来确认通过IC芯片50的输入凸块51、输出凸块53和玻璃基板56的透明电极57来压溃导电性粒子60而确保了导通性。这里,作为连接后的检查,有时通过外观检查来进行,该外观检查为从玻璃基板56的背面观察在透明电极57中出现的导电性粒子60的压痕。
然而,压痕的好坏是依靠人的目视的感官评价,除了存在作为判断基准的不确定性以外,由于与不存在导电性粒子60的周边部位的比较来进行评价,因此如果在凸块与透明电极57之间导电性粒子60重叠,或导电性粒子60在透明电极57的面内方向连续接触或过度接近,则也有可能影响压痕与周边部位的识别,即影响对比度、色调,视觉辨认度下降,不能进行迅速并且准确的外观检查。
因此,本发明的目的是提供一种连接体以及连接体的制造方法,其中,关于形成于IC芯片外侧缘的凸块与安装IC芯片的电路基板的电极之间是否适度地压溃导电性粒子并确保良好的导通性,可以在与形成于IC芯片内侧的凸块和电路基板的电极的压入的对比中容易地判定。
用于解决课题的方法
为了解决上述课题,本发明涉及的连接体是具备电路基板和电子部件、且通过排列有导电性粒子的各向异性导电粘接剂将上述电子部件连接至上述电路基板上的连接体,所述电路基板是排列有多个端子的端子列在与上述端子的排列方向正交的宽度方向上并置多列的电路基板,所述电子部件是排列有多个凸块的凸块列在与上述凸块的排列方向正交的宽度方向上、与上述多列端子列对应地并置多列的电子部件,在上述电路基板和上述电子部件的各自外侧排列的相对置的端子与凸块的距离大于在上述电路基板和上述电子部件的各自内侧排列的相对置的端子与凸块的距离。
此外,本发明涉及的连接体的制造方法是具备电路基板和电子部件、通过排列有导电性粒子的各向异性导电粘接剂而在上述电路基板上搭载上述电子部件、推压上述电子部件并且使上述各向异性导电粘接剂固化的连接体的制造方法,所述电路基板是排列有多个端子的端子列在宽度方向上并置多列的电路基板,所述电子部件是排列有多个凸块的凸块列在宽度方向上、与上述多列端子列对应地并置多列的电子部件,在上述电路基板和上述电子部件的各自外侧排列的相对置的端子与凸块的距离大于在上述电路基板和上述电子部件的各自内侧排列的相对置的端子与凸块的距离。
发明效果
根据本发明,由于通过排列有导电性粒子的各向异性导电粘接剂将电子部件连接至电路基板上,因此在电路基板和电子部件的各自外侧排列的相对置的端子与凸块的距离,即使大于在电路基板和电子部件的各自内侧排列的相对置的端子与凸块的距离时,也可以被抑制在相对于在各自内侧排列的端子与凸块的距离为规定的范围内。因此,根据本发明,在外侧排列的端子与凸块之间,也可以与在内侧排列的端子与凸块之间同样地确保良好的导通性。
附图说明
图1是作为连接体的一例而示出的液晶显示面板的截面图。
图2是表示从透明基板的背面看到的输入输出端子所出现的压痕的状态的仰视图。
图3是表示液晶驱动用IC与透明基板的连接工序的截面图。
图4是表示液晶驱动用IC的电极端子(凸块)和端子间间隙的平面图。
图5是表示各向异性导电膜的截面图。
图6是表示导电性粒子按照格子状规则排列的各向异性导电膜的平面图。
图7是表示实施例涉及的评价用IC的凸块与端子的距离的测定位置的平面图。
图8是表示实施例涉及的评价用IC的凸块与端子的距离的测定位置的截面图。
图9中,图9(A)~图9(C)是表示仅取出形成有凹凸部的凸块而示出的截面图。
图10中,图10(A)是表示液晶驱动用IC的平面图,图10(B)是表示连接工序的截面图。
图11是表示液晶驱动用IC发生了翘曲的状态的截面图。
具体实施方式
以下,参照附图对应用了本发明的连接体以及连接体的制造方法详细地说明。另外,本发明不仅仅限定于以下的实施方式,当然,能够在不超出本发明主旨的范围内进行各种变更。此外,附图是示意性的,有时各尺寸的比率等与实际的不同。具体的尺寸等应该参考以下的说明来判断。此外,当然,在附图相互间也包含彼此的尺寸的关系、比率不同的部分。
[液晶显示面板]
以下,作为应用了本发明的连接体,以在玻璃基板上安装了作为电子部件的液晶驱动用IC芯片的液晶显示面板为例进行说明。关于该液晶显示面板10,如图1所示,由玻璃基板等构成的二块透明基板11、12对置配置,这些透明基板11、12通过框状的密封件13而彼此贴合。而且,液晶显示面板10通过在被透明基板11、12围绕的空间内封入液晶14来形成面板显示部15。
透明基板11、12在彼此对置的两内侧表面,以彼此交叉的方式形成有由ITO(氧化铟锡)等形成的条纹状的一对透明电极16、17。而且,两个透明电极16、17通过该两个透明电极16、17的该交叉部位而构成作为液晶显示的最小单元的像素。
两个透明基板11、12中,一方的透明基板12比另一方的透明基板11的平面尺寸形成得大,在该形成得大的透明基板12的边缘部12a,设置有安装作为电子部件的液晶驱动用IC18的安装部27。另外,在安装部27,如图2、图3所示,形成有透明电极17的排列有多个输入端子19的输入端子列20和排列有多个输出端子21的输出端子列22、以及与设置于液晶驱动用IC18的IC侧对准标记32重叠的基板侧对准标记31。
安装部27例如具有:形成有一列输入端子列20的第一端子区域27a,以及形成有在与输出端子21的排列方向正交的宽度方向上并置的2列输出端子列22a、22b的第二端子区域27b。输出端子21和输出端子列22具有:在内侧即输入端子列20侧排列有第一输出端子21a的第一输出端子列22a,以及在外侧即安装部27的外缘侧排列有第二输出端子21b的第二输出端子列22b。
液晶驱动用IC18通过对像素选择性地施加液晶驱动电压,可以使液晶的取向部分性地变化而进行规定的液晶显示。此外,如图3、图4所示,液晶驱动用IC18在对透明基板12的安装面18a形成有排列了与透明电极17的输入端子19导通连接的多个输入凸块23的输入凸块列24、以及排列了与透明电极17的输出端子21导通连接的多个输出凸块25的输出凸块列26。输入凸块23和输出凸块25适合使用例如铜凸块、金凸块、或对铜凸块实施了镀金的凸块等。
液晶驱动用IC18例如具有:输入凸块23沿着安装面18a的一个侧缘以一列排列的第一凸块区域18b;以及形成有在与输出凸块25的排列方向正交的宽度方向上并置的2列输出凸块列26a、26b的第二凸块区域18c。输出凸块25和输出凸块列26具有:在内侧即输入凸块列24侧排列有第一输出凸块25a的第一输出凸块列26a;以及在外侧即安装面18a的外缘侧排列有第二输出凸块25b的第二输出凸块列26b。
第一输出凸块25a、第二输出凸块25b沿着与一个侧缘对置的另一个侧缘以多列交错状排列。输入凸块23、输出凸块25、设置于透明基板12的安装部27的输入端子19以及输出端子21分别以相同数量并且相同间距形成,透明基板12与液晶驱动用IC18进行位置匹配地连接,从而连接。
另外,关于第一凸块区域18b中的输入凸块列24、第二凸块区域18c中的输出凸块列26的排列,除了图4所示的以外,也可以为输入凸块列24在安装面18a的一个侧缘以一列或多列排列、或者输出凸块列26在另一个侧缘以一列或多列排列的任一构成。此外,关于输入凸块列24、输出凸块列26,以一列排列的输入凸块23、输出凸块25的一部分可以为多列,多个排列的输入凸块23、输出凸块25的一部分可以为一列。进一步,输入凸块列24、输出凸块列26可以以多列的各输入凸块23、输出凸块25的排列平行且相邻的凸块彼此并置的直线排列来形成,或者也可以以多列的各输入凸块23、输出凸块25的排列平行且相邻的凸块彼此均等错开的交错排列来形成。
此外,液晶驱动用IC18中,也可以沿着IC基板的长边使输入凸块23、输出凸块25排列,并且沿着IC基板的短边而形成侧边凸块。另外,输入凸块23、输出凸块25可以以同一尺寸形成,也可以以不同的尺寸形成。此外,对于输入凸块列24、输出凸块列26,以同一尺寸形成的输入凸块23、输出凸块25可以对称或不对称地排列,以不同的尺寸形成的输入凸块23、输出凸块25可以不对称地排列。
另外,随着近年来的液晶显示装置、其它电子设备的小型化、高功能化,液晶驱动用IC18等电子部件也要求小型化、低高度化,输入凸块23、输出凸块25的高度也变低(例如6~15μm)。
此外,液晶驱动用IC18在安装面18a形成有通过与基板侧对准标记31重叠而进行对透明基板12的对准的IC侧对准标记32。另外,由于透明基板12的透明电极17的配线间距、液晶驱动用IC18的输入凸块23、输出凸块25的细间距化进展,因此液晶驱动用IC18与透明基板12要求高精度的对准调整。
基板侧对准标记31和IC侧对准标记32可以使用通过组合来取得透明基板12与液晶驱动用IC18的对准的各种标记。
在形成于安装部27的透明电极17的输入端子19、输出端子21上,使用各向异性导电膜1作为电路连接用粘接剂而连接液晶驱动用IC18。各向异性导电膜1含有导电性粒子4,使液晶驱动用IC18的输入凸块23、输出凸块25与形成于透明基板12的安装部27的透明电极17的输入端子19、输出端子21通过导电性粒子4而电连接。该各向异性导电膜1被热压接头33热压接,从而粘合剂树脂流动化,导电性粒子4被压溃在输入端子19、输出端子21与液晶驱动用IC18的输入凸块23、输出凸块25之间,在该状态下使粘合剂树脂固化。由此,各向异性导电膜1将透明基板12与液晶驱动用IC18电连接、机械连接。
此外,在两个透明电极16、17上,形成有实施了规定的摩擦处理的取向膜28,通过该取向膜28而控制液晶分子的初始取向。进一步,在两个透明基板11、12的外侧,配设有一对偏振板29a、29b,通过该两个偏振板29a、29b而控制来自背光源等光源(未图示)的透射光的振动方向。
[各向异性导电膜]
接着,对各向异性导电膜1进行说明。如图5所示,各向异性导电膜(ACF:Anisotropic Conductive Film)1通常在成为基材的剥离膜2上形成有含有导电性粒子4的粘合剂树脂层(粘接剂层)3。各向异性导电膜1是热固化型或紫外线等光固化型的粘接剂,贴附于液晶显示面板10的透明基板12的形成有输入端子19、输出端子21的安装部27并且搭载液晶驱动用IC18,通过被热压接头33热加压从而流动化并将导电性粒子4压溃在相对置的透明电极17的输入端子19、输出端子21与液晶驱动用IC18的输入凸块23、输出凸块25之间,通过加热或紫外线照射,在导电性粒子被压溃的状态下固化。由此,各向异性导电膜1可以将透明基板12与液晶驱动用IC18连接,使其导通。
此外,对于各向异性导电膜1,在含有膜形成用树脂、热固性树脂、潜伏性固化剂、硅烷偶联剂等的通常的粘合剂树脂层3中以规定的图案规则地排列有导电性粒子4。
关于支撑粘合剂树脂层3的剥离膜2,例如,是对PET(聚对苯二甲酸乙二醇酯,PolyEthylene Terephthalate)、OPP(取向聚丙烯,Oriented Polypropylene)、PMP(聚4-甲基戊烯-1,Poly-4-methylpentene-1)、PTFE(聚四氟乙烯,Polytetrafluoroethylene)等涂布有机硅等剥离剂而成,防止各向异性导电膜1的干燥,并且维持各向异性导电膜1的形状。
作为粘合剂树脂层3所含有的膜形成用树脂,优选平均分子量为10000~80000左右的树脂。作为膜形成用树脂,可举出环氧树脂、改性环氧树脂、氨基甲酸酯树脂、苯氧基树脂等各种树脂。其中,从膜形成状态、连接可靠性等观点考虑,特别优选为苯氧基树脂。
作为热固性树脂,没有特别限定,可举出例如市售的环氧树脂、丙烯酸系树脂等。
作为环氧树脂,没有特别限定,可举出例如萘型环氧树脂、联苯型环氧树脂、苯酚酚醛清漆型环氧树脂、双酚型环氧树脂、芪型环氧树脂、三苯酚甲烷型环氧树脂、苯酚芳烷基型环氧树脂、萘酚型环氧树脂、二环戊二烯型环氧树脂、三苯基甲烷型环氧树脂等。它们可以为单独的,也可以为2种以上的组合。
作为丙烯酸系树脂,没有特别限制,可以根据目的而适当选择丙烯酸系化合物、液状丙烯酸酯等。可以举出例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸异丙酯、丙烯酸异丁酯、环氧丙烯酸酯、乙二醇二丙烯酸酯、二甘醇二丙烯酸酯、三羟甲基丙烷三丙烯酸酯、二羟甲基三环癸烷二丙烯酸酯、四亚甲基二醇四丙烯酸酯、2-羟基-1,3-二丙烯酰氧基丙烷、2,2-双[4-(丙烯酰氧基甲氧基)苯基]丙烷、2,2-双[4-(丙烯酰氧基乙氧基)苯基]丙烷、二环戊烯基丙烯酸酯、三环癸基丙烯酸酯、三(丙烯酰氧基乙基)异氰脲酸酯、氨基甲酸酯丙烯酸酯、环氧丙烯酸酯等。另外,也可以使用使丙烯酸酯为甲基丙烯酸酯的树脂。它们可以单独使用1种,也可以并用2种以上。
作为潜伏性固化剂,没有特别限定,可举出例如加热固化型、UV固化型等各种固化剂。潜伏性固化剂通常不反应,通过热、光、加压等根据用途选择的各种引发物而活化,开始反应。热活性型潜伏性固化剂的活化方法中,存在:通过加热引起的离解反应等而生成活性种(阳离子、阴离子、自由基)的方法;在室温附近在环氧树脂中稳定分散,在高温与环氧树脂相容、溶解,开始固化反应的方法;将分子筛封入型的固化剂在高温溶出而开始固化反应的方法;利用微胶囊的溶出、固化方法等。作为热活性型潜伏性固化剂,有咪唑系、酰肼系、三氟化硼-胺配位化合物、锍盐、胺化酰亚胺、多胺盐、双氰胺等、它们的改性物,它们可以为单独的,也可以为2种以上的混合体。其中,微胶囊型咪唑系潜伏性固化剂是优选的。
作为硅烷偶联剂,没有特别限定,可以举出例如环氧系、氨基系、巯基-硫化物系、脲基系等。通过添加硅烷偶联剂,提高有机材料与无机材料的界面的粘接性。
[导电性粒子]
作为导电性粒子4,可以举出在各向异性导电膜1中使用的公知的任意导电性粒子。作为导电性粒子4,可举出例如镍、铁、铜、铝、锡、铅、铬、钴、银、金等各种金属的粒子,金属合金的粒子,在金属氧化物、碳、石墨、玻璃、陶瓷、塑料等的粒子的表面涂布了金属的粒子,或者在这些粒子的表面进一步涂布了绝缘薄膜的粒子等。在树脂粒子的表面涂布了金属的情况下,作为树脂粒子,可以举出例如环氧树脂、酚树脂、丙烯酸系树脂、丙烯腈-苯乙烯(AS)树脂、苯并胍胺树脂、二乙烯基苯系树脂、苯乙烯系树脂等的粒子。导电性粒子4的大小优选为1~10μm,但本发明不限定于此。
[导电性粒子的规则排列]
对于各向异性导电膜1,导电性粒子4在俯视时以规定的排列图案规则地排列,例如如图6所示,排列成格子状。如后所述,通过使用导电性粒子4在俯视时规则地排列的各向异性导电膜1,从而在透明基板12的安装部27和液晶驱动用IC18的安装面18a的各自外侧排列的相对置的第二输出端子21b与第二输出凸块25b的距离相对于在内侧排列的相对置的第一输出端子21a与第一输出凸块25a的距离为130%以内,与使用了导电性粒子4无规地分散的各向异性导电膜的情况相比,在外侧排列的第二输出端子21b与第二输出凸块25b的距离窄,具有良好的导通性。
此外,对于各向异性导电膜1,通过在俯视时规则地排列,从而与导电性粒子4无规地分散的情况相比,液晶驱动用IC18的相邻的输入凸块23、输出凸块25间的间隙35细间距化并且端子间面积狭窄化,并且即使导电性粒子4高密度地填充,在液晶驱动用IC18的连接工序中,也可以防止导电性粒子4的凝集体引起的输入凸块23、输出凸块25间的间隙35中的凸块间短路。
此外,对于各向异性导电膜1,通过导电性粒子4规则地排列,从而在粘合剂树脂层3高密度填充的情况下,也可防止导电性粒子4的凝集引起的疏密的发生。因此,根据各向异性导电膜1,对于细间距化了的输入端子19、输出端子21、输入凸块23、输出凸块25也可以捕捉导电性粒子4。导电性粒子4的排列图案可以任意地设定。
这样的各向异性导电膜1例如通过下述方法来制造:在能够拉伸的片上涂布粘着剂,在其上单层排列导电性粒子4后,使该片以所希望的拉伸倍率拉伸的方法;使导电性粒子4在基板上排列成规定的排列图案后,向被剥离膜2支撑的粘合剂树脂层3转印导电性粒子4的方法;或在被剥离膜2支撑的粘合剂树脂层3上,通过设置有与排列图案对应的开口部的排列板而供给导电性粒子4的方法;等等。
另外,各向异性导电膜1的形状没有特别限定,例如,如图5所示,可以制成能够卷绕于卷绕卷轴6的长带形状,仅切割成规定的长度而使用。
此外,上述的实施方式中,作为各向异性导电膜1,以在粘合剂树脂层3中规则排列有导电性粒子4的热固性树脂组合物成型为膜状而成的粘接膜为例进行了说明,但本发明涉及的粘接剂不限定于此,例如可以为将仅由粘合剂树脂3形成的绝缘性粘接剂层与由规则排列有导电性粒子4的粘合剂树脂3形成的导电性粒子含有层叠层而成的构成。此外,关于各向异性导电膜1,只要导电性粒子4俯视时规则排列,则除了如图5所示那样的单层排列以外,导电性粒子4还可以遍及多个粘合剂树脂层3地排列并且在俯视时规则排列。此外,各向异性导电膜1可以是在多层构成的至少一个层内,以规定距离单一地分散的导电膜。
[导电性粒子含有层的高粘度]
此外,关于各向异性导电膜1,在将仅由粘合剂树脂3形成的绝缘性粘接剂层与由规则排列有导电性粒子4的粘合剂树脂3形成的导电性粒子含有层叠层而得的构成中,导电性粒子含有层可以是与绝缘性粘接剂层相比粘度高的层。
通过在粘度高的粘合剂树脂3中规则排列导电性粒子4,从而即使在被热压接头33加热推压时,也可抑制导电性粒子含有层中的粘合剂树脂3的流动,由此抑制导电性粒子4的凝集、疏密的发生。因此,液晶驱动用IC18和透明基板12不仅内侧的端子列和凸块列,即使外侧的端子列和凸块列,也成为良好的端子与凸块的距离。
[连接工序]
接着,对在透明基板12连接液晶驱动用IC18的连接工序进行说明。首先,在透明基板12的形成有输入端子19、输出端子21的安装部27上暂时粘贴各向异性导电膜1。接着,将该透明基板12载置在连接装置的平台上,在透明基板12的安装部27上隔着各向异性导电膜1而配置液晶驱动用IC18。
接着,利用加热到使粘合剂树脂层3固化的规定温度的热压接头33,以规定的压力、时间从液晶驱动用IC18上进行热加压。由此,各向异性导电膜1的粘合剂树脂层3显示流动性,从液晶驱动用IC18的安装面18a与透明基板12的安装部27之间流出,并且粘合剂树脂层3中的导电性粒子4被夹持在液晶驱动用IC18的输入凸块23、输出凸块25与透明基板12的输入端子19、输出端子21之间而被压溃。
其结果是,通过在输入凸块23、输出凸块25与输入端子19、输出端子21之间夹持导电性粒子4来实现电连接,在该状态下被热压接头33加热了的粘合剂树脂固化。由此,可以制造在液晶驱动用IC18的输入凸块23、输出凸块25与形成于透明基板12的输入端子19、输出端子21之间确保了导通性的液晶显示面板10。另外,被夹持在输入凸块23、输出凸块25与输入端子19、输出端子21之间的导电性粒子4的推压痕在输入端子19、输出端子21内作为压痕而出现,如图2所示,能够从透明基板12的背面观察。
不在输入凸块23、输出凸块25与输入端子19、输出端子21之间的导电性粒子4在相邻的输入凸块23、输出凸块25间的间隙35中分散于粘合剂树脂中,维持电绝缘的状态。因此,液晶显示面板10仅在液晶驱动用IC18的输入凸块23、输出凸块25与透明基板12的输入端子19、输出端子21之间实现电导通。此外,作为各向异性导电膜1,不限于热固化型,只要是进行加压连接,则也可以使用光固化型或光热并用型的粘接剂。
[端子与凸块的距离]
这里,关于液晶显示面板1,在透明基板12的安装部27和液晶驱动用IC18的安装面18a的各自外侧排列的第二输出端子21b与第二输出凸块25b的距离大于在各自内侧排列的第一输出端子21a与第一输出凸块25a的距离。这是因为,液晶驱动用IC18在与透明基板12连接时被热压接头33加热推压,从而在未形成输入凸块23、输出凸块25的中央的区域中进行各向异性导电膜1的粘合剂树脂的排除,以输入凸块23和相对地排列在安装面18a内侧的第一输出凸块25a为支点发生挠曲。此外,此时,在使用了导电性粒子4无规地分散的各向异性导电膜的情况下,导电性粒子4偏置,凝集,从而有时端子与凸块的距离在局部扩大。因此,在外侧排列的第二输出端子21b与第二输出凸块25b之间导电性粒子4未被充分地压缩,可能变得导通不良。
在这点上,关于液晶显示面板1,如上所述,由于使用导电性粒子4在俯视时以规定的排列图案规则排列的各向异性导电膜1而连接,因此在透明基板12的安装部27和液晶驱动用IC18的安装面18a的各自外侧排列的第二输出端子21b与第二输出凸块25b的距离相对于在各自内侧排列的第一输出端子21a与第一输出凸块25a的距离不变大,抑制为至多130%以内。因此,关于液晶显示面板1,在外侧排列的第二输出端子21b与第二输出凸块25b之间,也可以与在内侧排列的第一输出端子21a与第一输出凸块25a之间同样地确保良好的导通性。
另外,关于第一输出端子21a与第一输出凸块25a、第二输出端子21b与第二输出凸块25b的距离,通过在连接了液晶驱动用IC18后,切断第一输出凸块25a、第二输出凸块25b的连接位置,对从其切断面露出的第一输出端子21a与第一输出凸块25a之间、和第二输出端子21b与第二输出凸块25b之间进行测量来获知。
此外,关于各输入端子19与输入凸块23之间、输出端子21与输出凸块25之间的距离,通过基于相对于各向异性导电膜1所含有的导电性粒子4的平均粒径的比例来对比,不论使用的导电性粒子4的粒径如何,都可以确认到具备通过压缩导电性粒子4而具备良好的导通性所需要的距离。因此,本说明书中,输入端子19与输入凸块23之间、输出端子21与输出凸块25之间的距离用相对于导电性粒子的平均粒径的比例(%)进行说明。
[宽度方向的中心]
液晶显示面板1优选:在液晶驱动用IC18的排列有输出凸块25的输出凸块列26的中心部,在外侧排列的相对置的第二输出端子21b与第二输出凸块25b的距离成为在内侧排列的相对置的第一输出端子21a与第一输出凸块25a的距离的130%以内。液晶驱动用IC18的输出凸块列26的中心部成为与热压接头33的热加压面的各角部隔得最远、在第二输出凸块列26b中挠曲相对最大的位置。
因此认为,在该输出凸块列26的中心部,通过将在外侧排列的相对置的第二输出端子21b与第二输出凸块25b的距离设为在内侧排列的相对置的第一输出端子21a与第一输出凸块25a的距离的130%以内,从而全部的输入端子19与输入凸块23之间、输出端子21与输出凸块25之间的距离成为其以下,压缩导电性粒子4而具备良好的导通性。
[与排列方向的两端的对比]
此外,液晶显示面板1优选:将在透明基板12与液晶驱动用IC18的各自外侧排列的第二输出端子21b与第二输出凸块25b的距离Do、与在透明基板12与液晶驱动用IC18的各自内侧排列的第一输出端子21a与第一输出凸块25a的距离Di的比例设为D(=Do/Di)时,D(=Do/Di)为,在液晶驱动用IC18的输出凸块25的排列方向上的两端的、在透明基板12和液晶驱动用IC18的各自外侧排列的相对置的第二输出端子21b与第二输出凸块25b的平均距离do、与在各自内侧排列的相对置的第一输出端子21a与第一输出凸块25a的平均距离di的比例d(=do/di)的130%以内。
液晶驱动用IC18的输出凸块25的排列方向上的两端部的挠曲比较小,在透明基板12和液晶驱动用IC18的各自外侧排列的相对置的第二输出端子21b与第二输出凸块25b的平均距离do、与在各自内侧排列的相对置的第一输出端子21a与第一输出凸块25a的平均距离di的比例d(=do/di)几乎相等,遍及内外而具备良好的导通性。因此认为,通过在外侧和内侧分别排列的第一输出端子21a与第一输出凸块25a、第二输出端子21b与第二输出凸块25b的距离的比例D成为输出凸块25的排列方向上的两端部的上述比例d的130%以内,从而关于该第一输出端子21a与第一输出凸块25a、第二输出端子21b与第二输出凸块25b,与输出凸块25的排列方向上的两端部的第一输出端子21a和第一输出凸块25a以及第二输出端子21b和第二输出凸块25b同样地具备良好的导通性。
[宽度方向的中心]
液晶显示面板1优选:在液晶驱动用IC18的排列有输出凸块25的输出凸块列26的中心部,第二输出端子21b与第二输出凸块25b的距离Do、与在透明基板12与液晶驱动用IC18的各自内侧排列的第一输出端子21a与第一输出凸块25a的距离Di的比例D(=Do/Di)成为输出凸块25的排列方向上的两端部的上述比例d的130%以内。如上所述,液晶驱动用IC18的排列有输出凸块25的输出凸块列26的中心部成为与热压接头33的热加压面的各角部隔得最远、在第二输出凸块列26b中挠曲相对最大的位置。
因此认为,在该输出凸块列26的中心部,第二输出端子21b与第二输出凸块25b的距离Do、与在透明基板12与液晶驱动用IC18的各自内侧排列的第一输出端子21a与第一输出凸块25a的距离Di的比例D(=Do/Di)成为输出凸块25的排列方向上的两端部的上述比例d的130%以内,从而关于全部的第一输出端子21a与第一输出凸块25a、第二输出端子21b与第二输出凸块25b,与输出凸块25的排列方向上的两端部的第一输出端子21a和第一输出凸块25a以及第二输出端子21b和第二输出凸块25b同样地具备良好的导通性。
[输入输出凸块列的两端部的平均距离]
此外,液晶显示面板1优选:在透明基板12的第二端子区域27b和液晶驱动用IC18的第二凸块区域18c中在各自外侧排列的相对置的第二输出端子21b与第二输出凸块25b的距离Do为,在透明基板12的第二端子区域27b和液晶驱动用IC18的第二凸块区域18c中在各自外侧排列的第二输出端子列22b与第二输出凸块列26b的两端部的相对置的第二输出端子21b与第二输出凸块25b的距离、与透明基板12的第一端子区域27a和液晶驱动用IC18的第一凸块区域18b的输入端子列20与输入凸块列24的两端部的相对置的输入端子19与输入凸块23的距离的平均距离dAVE的110%以内。
另外,在输入端子列20和输入凸块列24在与输入端子19和输入凸块23的排列方向正交的宽度方向上并置多列的情况下,输入端子列20与输入凸块列24的两端部是指在各自外侧排列的输入端子列20和输入凸块列24的两端部。
液晶驱动用IC18的输入凸块23、输出凸块25的排列方向上的两端部由于受到来自热压接头33的压力因此挠曲比较少,在透明基板12和液晶驱动用IC18的各自外侧排列的输入端子列20的两端部的相对置的输入端子19与输入凸块23的各距离、以及第二输出端子列22b的两端部的相对置的第二输出端子21b与第二输出凸块25b的各距离共计4点的距离几乎相等,具备良好的导通性。
因此,在透明基板12的第二端子区域27b和液晶驱动用IC18的第二凸块区域18c中在各自外侧排列的相对置的第二输出端子21b与第二输出凸块25b的距离Do成为输入端子列20和输入凸块列24的两端部的相对置的输入端子19与输入凸块23的各距离、以及第二输出端子列22b和第二输出凸块列26b的两端部的第二输出端子21b与第二输出凸块25b的各距离共计4点的平均距离dAVE的110%以内,从而关于该第二输出端子21b与第二输出凸块25b,与输入端子列20和输入凸块列24以及第二输出端子列22b和第二输出凸块列26b的各两端部的输入端子19和输入凸块23以及第二输出端子21b和第二输出凸块25b同样地具备良好的导通性。
[宽度方向的中心]
液晶显示面板1优选:液晶驱动用IC18的排列有输出凸块25的输出凸块列26的中心部的第二输出端子21b与第二输出凸块25b的距离Do成为输入端子列20和输入凸块列24的两端部的相对置的输入端子19与输入凸块23的各距离、以及第二输出端子列22b和第二输出凸块列26b的两端部的第二输出端子21b与第二输出凸块25b的各距离共计4点的平均距离dAVE的110%以内。如上所述,液晶驱动用IC18的排列有输出凸块25的输出凸块列26的中心部成为与热压接头33的热加压面的各角部隔得最远、在第二输出凸块列26b中挠曲相对最大的位置。
因此认为,在该输出凸块列26的中心部,通过第二输出端子21b与第二输出凸块25b的距离Do成为上述平均距离dAVE的110%以内,从而关于全部的第二输出端子21b与第二输出凸块25b,与输入端子列20和输入凸块列24的两端部的相对置的输入端子19与输入凸块23、以及第二输出端子列22b和第二输出凸块列26b的两端部的第二输出端子21b与第二输出凸块25b同样地具备良好的导通性。
这里,关于IC的凸块,存在着在凸块面形成有凹凸形状的凸块。例如,凸块面是中央凹陷的形状(图9(A))、凹凸为连续的形状(图9(B))、中央隆起的形状(图9(C))等各种形状的凸块面。此外,形成于凸块面的凹凸形状为遍及凸块的宽度方向而形成的形状、遍及长度方向而形成的形状等各种各样的。其它情况中,凹凸形状也有时形成于凸块面的一部分。此外,凹凸的高低差、凹部区域与凸部区域的面积比例也各种各样。
本发明即使为这样的凸块表面不平滑的凸块,也使输入输出凸块中的粒子捕捉性为一定以上,具备良好的导通性。具体而言,认为,如果凹凸的最大高低差为导电粒子直径的50%以内,则即使具有上述那样的挠曲也可以获得充分的粒子捕捉性。
实施例
[第一实施例]
接着,对本发明的实施例进行说明。第一实施例中,使用规则排列有导电性粒子的各向异性导电膜、与无规地分散有导电性粒子的各向异性导电膜,制成将评价用IC连接于评价用玻璃基板而成的连接体样品,通过截面观察,基于与导电性粒子的平均粒径的比例来求出端子与凸块的距离,并且求出评价用IC的外侧的端子列中的端子与凸块的距离相对于内侧的端子列中的端子与凸块的距离的比例。此外,测定各连接体样品的初始导通电阻、可靠性试验后的导通电阻、相邻的IC凸块间的短路发生率。
[各向异性导电膜]
评价用IC的连接所使用的各向异性导电膜的粘合剂树脂层如下形成:调制将苯氧基树脂(商品名:YP50,新日铁化学公司制)60质量份、环氧树脂(商品名:jER828,三菱化学公司制)40质量份、阳离子系固化剂(商品名:SI‐60L,三新化学工业公司制)2质量份添加到溶剂中而得的粘合剂树脂组合物,将该粘合剂树脂组合物涂布在剥离膜上,进行干燥。
[截面观察和导通电阻测定用的评价用IC]
作为截面观察和导通电阻测定用的评价元件,准备外形为1.0mm×20mm、1.5mm×20mm、2.0mm×20mm的3种。任一评价元件都形成厚度为0.2mm、宽度15μ×长度100μm、高度12μm的凸块(镀金)。
[IC凸块间短路测定用的评价用IC]
作为IC凸块间短路测定用的评价元件,使用了外形为0.7mm×20mm、厚度0.2mm、凸块(镀金)为宽度15μ×长度100μm、高度12μm、凸块间间隙宽度为7.5μm的评价用IC。
[凸块排列]
如图7、图8所示,各评价用IC18形成为大致矩形,并且设置有在长度方向上排列有多个输入凸块23、输出凸块25的输入凸块列24、输出凸块列26。输入凸块列24在评价用IC的一个侧缘形成为一列。输出凸块列26在评价用IC的另一个侧缘形成为三列。即,关于评价用IC18,沿着评价用IC的长度方向而排列有多个输出凸块25的3列输出凸块列26-1、26-2、26-3在宽度方向上并置。这里,将在评价用IC18的最内侧排列的输出凸块列26-1设为第一列,将在最外侧排列的输出凸块列26-3设为第三列,将在正中排列的输出凸块列26-2设为第二列。
[评价用玻璃基板]
作为截面观察和导通电阻测定用的评价用IC以及IC凸块间短路测定用的评价用IC所连接的评价用玻璃基板12,使用了外形为30mm×50mm、厚度0.5mm并且形成有端子列的ITO图案玻璃,该端子列排列有多个与截面观察和导通电阻测定用的评价用IC18的凸块相同尺寸相同间距的由ITO配线形成的输入端子19、输出端子21。
在该评价用玻璃基板12上暂时粘贴了各向异性导电膜后,一边取得IC凸块与基板电极的对准一边搭载评价用IC18,通过热压接头在180℃、80MPa、5秒的条件下热压接来制成连接体样品。关于各连接体样品,测定初始导通电阻、可靠性试验后的导通电阻、相邻的IC凸块间的短路发生率。关于可靠性试验,将连接体样品在温度85℃、湿度85%RH的恒温槽中放置500小时。
此外,关于IC凸块间的短路发生率,将小于300ppm评价为最良(A),将300ppm以上且小于1000ppm评价为良好(B),将1000ppm以上评价为不良(C)。
[实施例1]
实施例1中,使用了导电性粒子规则排列于粘合剂树脂层的各向异性导电膜。实施例1中使用的各向异性导电膜是通过在能够拉伸的片上涂布粘着剂,在其上以格子状并且均等地单层排列导电性粒子后,在使该片以规定的拉伸倍率拉伸了的状态下,将粘合剂树脂层层压来制造。使用的导电性粒子(商品名:AUL704,积水化学工业公司制)为粒径4μm、粒子个数密度为28000个/mm2。
实施例1涉及的连接体样品,初始导通电阻为0.2Ω,可靠性试验后的导通电阻为2.4Ω。此外,IC凸块间短路的发生率也小于300ppm(A)。
[实施例2]
实施例2中,使用了粒子个数密度为5200个/mm2的各向异性导电膜,除此以外,与实施例1为相同条件。
实施例2涉及的连接体样品,初始导通电阻为0.4Ω,可靠性试验后的导通电阻为3.4Ω。此外,IC凸块间短路的发生率也小于300ppm(A)。
[实施例3]
实施例3中,使用了使粒径3μm的导电性粒子(商品名:AUL703,积水化学工业公司制)以粒子个数密度50000个/mm2规则排列的各向异性导电膜,除此以外,与实施例1为相同条件。
实施例3涉及的连接体样品,初始导通电阻为0.2Ω,可靠性试验后的导通电阻为2.5Ω。此外,IC凸块间短路的发生率也小于300ppm(A)。
[实施例4]
实施例4中,使用了使粒径5μm的导电性粒子(商品名:AUL705,积水化学工业公司制)以粒子个数密度18000个/mm2规则排列的各向异性导电膜,除此以外,与实施例1为相同条件。
实施例4涉及的连接体样品,初始导通电阻为0.2Ω,可靠性试验后的导通电阻为3.0Ω。此外,IC凸块间短路的发生率为300ppm以上且小于1000ppm(B)。
[比较例1]
比较例1中,使用了在粘合剂树脂组合物中加入导电性粒子进行调制,在剥离膜上涂布、烧成,从而在粘合剂树脂层无规地分散了导电性粒子的各向异性导电膜。使用的导电性粒子(商品名:AUL704,积水化学工业公司制)为粒径4μm,粒子个数密度为60000个/mm2。
比较例1涉及的连接体样品,初始导通电阻为0.2Ω,可靠性试验后的导通电阻为2.8Ω。此外,IC凸块间短路的发生率为1000ppm以上(C)。
[表1]
第一实施例中,关于实施例1~4和比较例1涉及的各连接体样品,如图7中A-A’所示,将输入凸块列24、输出凸块列26的中央部沿评价用IC18的宽度方向切断,进行了截面观察。而且,如图8所示,以相对于导电性粒子的粒径的比例求出第一列的输出凸块列26-1、第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D1、D3,并且算出第三列的输出凸块列26-3中央部的距离D3相对于第一列的输出凸块列26-1中央部的距离D1的比例D(=D3/D1)。此外,对于第一列的输出凸块列26-1、第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的导电性粒子的捕捉数进行计数。
[实施例1的结果]
使用了评价用IC(1×20mm)的实施例1中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的62%且粒子捕捉数为37个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的64%且粒子捕捉数为35个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.03。
使用了评价用IC(1.5×20mm)的实施例1中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的61%且粒子捕捉数为36个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的65%且粒子捕捉数为34个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.07。
使用了评价用IC(2×20mm)的实施例1中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的60%且粒子捕捉数为36个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的67%且粒子捕捉数为32个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.12。
[实施例2的结果]
使用了评价用IC(1×20mm)的实施例2中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的57%且粒子捕捉数为6个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的62%且粒子捕捉数为6个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.09。
使用了评价用IC(1.5×20mm)的实施例2中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的56%且粒子捕捉数为7个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的64%且粒子捕捉数为6个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.14。
使用了评价用IC(2×20mm)的实施例2中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的55%且粒子捕捉数为6个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的69%且粒子捕捉数为5个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.25。
[实施例3的结果]
使用了评价用IC(1×20mm)的实施例3中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(3μm)的69%且粒子捕捉数为61个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(3μm)的70%且粒子捕捉数为58个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.01。
使用了评价用IC(1.5×20mm)的实施例3中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(3μm)的68%且粒子捕捉数为60个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(3μm)的74%且粒子捕捉数为55个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.09。
使用了评价用IC(2×20mm)的实施例3中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(3μm)的68%且粒子捕捉数为63个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(3μm)的80%且粒子捕捉数为52个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.18。
[实施例4的结果]
使用了评价用IC(1×20mm)的实施例4中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(5μm)的55%且粒子捕捉数为24个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(5μm)的57%且粒子捕捉数为23个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.04。
使用了评价用IC(1.5×20mm)的实施例4中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(5μm)的54%且粒子捕捉数为23个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(5μm)的57%且粒子捕捉数为22个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.06。
使用了评价用IC(2×20mm)的实施例4中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(5μm)的55%且粒子捕捉数为23个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(5μm)的59%且粒子捕捉数为21个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.07。
[比较例1的结果]
使用了评价用IC(1×20mm)的比较例1中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的58%且粒子捕捉数为27个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的84%且粒子捕捉数为7个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.45。
使用了评价用IC(1.5×20mm)的比较例1中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的54%且粒子捕捉数为29个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的95%且粒子捕捉数为4个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为1.76。
使用了评价用IC(2×20mm)的比较例1中,第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1为导电性粒子直径(4μm)的51%且粒子捕捉数为25个,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为导电性粒子直径(4μm)的108%且粒子捕捉数为2个。第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1)为2.12。
[第一实施例的考察]
如表1所示,根据使用规则排列有导电性粒子的各向异性导电膜而制成的实施例1~4涉及的连接体样品,都是在最外侧排列的第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3为第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1的130%以下,第一列与第三列基本上没有差别,通过导电性粒子的压缩而具备良好的导通性。
因此认为,实施例1~4中,在输出端子21与输出凸块25的距离最易于扩大的第三列的输出凸块列26-3的中央部,具有与第一列没有很大差别的距离,因此第二列、第三列的其它的输出端子21与输出凸块25的距离也与第一列同样地窄,通过导电性粒子的压缩而具有良好的导电性。此外,根据实施例1~4涉及的连接体样品,由于即使在第三列的输出凸块列26-3的中央也压入了导电性粒子,因此评价用玻璃基板12的背面所出现的导电性粒子的压痕也可以清晰地进行确认(参照图2),利用压痕进行的导通性的确认也可以精度良好地进行。
另一方面,比较例1中,在最外侧排列的第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3、与第一列的输出凸块列26-1的中央部的输出端子21与输出凸块25的距离D1的130%相比增大,损害导通性。此外,比较例1中,导电性粒子的压入不足,利用压痕观察进行的导通性的确认也变得困难。
[第二实施例]
接着,对第二实施例进行说明。第二实施例中,如图7中B-B’和C-C’所示,将实施例1~4、比较例1涉及的各连接体样品的输入凸块列24、输出凸块列26的两端部沿评价用IC18的宽度方向切断,进行了截面观察。而且,以相对于导电性粒子的粒径的比例求出第一列的输出凸块列26-1、第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d1、d3,并且算出第三列的输出凸块列26-3两端部的平均距离相对于第一列的输出凸块列26-1两端部的平均距离d1的比例d(=d3/d1)。另外,第一、三列的输出凸块列26的两端部的端子与凸块的距离差为30%以内。
接着,算出在第一实施例中算出的第三列的输出凸块列26-3的中央部的距离D3相对于第一列的输出凸块列26-1的中央部的距离D1的比例D(=D3/D1)、与第三列的输出凸块列26-3的两端部的平均距离相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)之间的比例(D/d)。这是因为,在输出凸块列26的两端,易于受到热压接头的推压力,第一、三列中都是输出端子21与输出凸块25的距离窄,易于压入导电性粒子,因此关于输出端子21与输出凸块25的距离最易于扩大的第三列的输出凸块列26-3的中央部相对于第一列的输出凸块列26-1的中央部的比例D,是通过与第三列的输出凸块列26-3的两端部相对于第一列的输出凸块列26-1的两端部的比例d进行对比来评价。认为,在输出端子21与输出凸块25的距离最易于扩大的输出凸块列26的中央部的比例D与输出凸块列26的两端部的比例d没有很大差别的情况下,其它全部的输出端子21与输出凸块25都与第一列的输出凸块列26-1、第三列的输出凸块列26-3的两端部同样地,距离窄而压入导电性粒子。另外,在第二实施例中,对于第一列的输出凸块列26-1、第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的导电性粒子的平均捕捉数进行计数。
[表2]
[实施例1的结果]
如表2所示,在使用了评价用IC(1×20mm)的实施例1中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的58%且平均粒子捕捉数为34个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的距离d3为导电性粒子直径(4μm)的59%且平均粒子捕捉数为33个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.02,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.03)之间的比例(D/d)为1.01。
在使用了评价用IC(1.5×20mm)的实施例1中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的59%且平均粒子捕捉数为34个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(4μm)的60%且平均粒子捕捉数为32个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.02,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.07)之间的比例(D/d)为1.05。
在使用了评价用IC(2×20mm)的实施例1中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的60%且平均粒子捕捉数为35个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的距离d3为导电性粒子直径(4μm)的62%且平均粒子捕捉数为33个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.03,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.12)之间的比例(D/d)为1.09。
[实施例2的结果]
在使用了评价用IC(1×20mm)的实施例2中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的57%且平均粒子捕捉数为5个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(4μm)的59%且平均粒子捕捉数为6个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.04,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.09)之间的比例(D/d)为1.05。
在使用了评价用IC(1.5×20mm)的实施例2中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的56%且平均粒子捕捉数为6个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(4μm)的58%且平均粒子捕捉数为6个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.04,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.14)之间的比例(D/d)为1.10。
在使用了评价用IC(2×20mm)的实施例2中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的57%且平均粒子捕捉数为6个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(4μm)的59%且平均粒子捕捉数为5个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.04,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.25)之间的比例(D/d)为1.20。
[实施例3的结果]
在使用了评价用IC(1×20mm)的实施例3中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(3μm)的67%且平均粒子捕捉数为59个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(3μm)的68%且平均粒子捕捉数为57个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.01,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.01)之间的比例(D/d)为1.00。
在使用了评价用IC(1.5×20mm)的实施例3中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(3μm)的67%且平均粒子捕捉数为58个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(3μm)的69%且平均粒子捕捉数为56个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.03,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.09)之间的比例(D/d)为1.06。
在使用了评价用IC(2×20mm)的实施例3中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(3μm)的66%且平均粒子捕捉数为57个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(3μm)的69%且平均粒子捕捉数为54个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.05,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.18)之间的比例(D/d)为1.12。
[实施例4的结果]
在使用了评价用IC(1×20mm)的实施例4中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(5μm)的55%且平均粒子捕捉数为24个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(5μm)的57%且平均粒子捕捉数为26个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.04,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.04)之间的比例(D/d)为1.00。
在使用了评价用IC(1.5×20mm)的实施例4中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(5μm)的54%且平均粒子捕捉数为22个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(5μm)的55%且平均粒子捕捉数为23个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.02,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.06)之间的比例(D/d)为1.04。
在使用了评价用IC(2×20mm)的实施例4中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(5μm)的54%且平均粒子捕捉数为22个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(5μm)的57%且平均粒子捕捉数为24个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.06,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.07)之间的比例(D/d)为1.01。
[比较例1的结果]
在使用了评价用IC(1×20mm)的比较例1中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的55%且平均粒子捕捉数为27个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(4μm)的59%且平均粒子捕捉数为23个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.07,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.45)之间的比例(D/d)为1.36。
在使用了评价用IC(1.5×20mm)的比较例1中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的54%且平均粒子捕捉数为29个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(4μm)的60%且平均粒子捕捉数为25个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.11,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=1.76)之间的比例(D/d)为1.59。
在使用了评价用IC(2×20mm)的比较例1中,第一列的输出凸块列26-1的两端部的输出端子21与输出凸块25的平均距离d1为导电性粒子直径(4μm)的51%且平均粒子捕捉数为27个,第三列的输出凸块列26-3的两端部的输出端子21与输出凸块25的平均距离d3为导电性粒子直径(4μm)的59%且平均粒子捕捉数为22个。
第三列的输出凸块列26-3的两端部的平均距离d3相对于第一列的输出凸块列26-1的两端部的平均距离d1的比例d(=d3/d1)为1.16,与由第一实施例求出的输出凸块列26的中央部中第三列的输出端子21与输出凸块25的距离D3相对于第一列的输出端子21与输出凸块25的距离D1的比例D(=D3/D1=2.12)之间的比例(D/d)为1.83。
[第二实施例的考察]
如表2所示,根据使用规则排列有导电性粒子的各向异性导电膜而制成的实施例1~4涉及的连接体样品,关于输出端子21与输出凸块25的距离最易于扩大的输出凸块列26的中央部的第三列相对于第一列的输出端子21与输出凸块25的距离的比例D,都为输出端子21与输出凸块25比较接近的输出凸块列26的两端部的第三列相对于第一列的输出端子21与输出凸块25的距离的比例d的130%以下,基本上没有差别,压入导电性粒子并具备良好的导通性。
因此认为,实施例1~4中,在输出端子21与输出凸块25的距离最易于扩大的输出凸块列26的中央部,由于具有与两端部没有很大差别的距离比例,因此第二列、第三列的其它的输出端子21与输出凸块25的距离比例也与第一、三列的两端部同样地窄,通过导电性粒子的压缩而具有良好的导电性。此外,根据实施例1~4涉及的连接体样品,在输出凸块列26的中央部也压入导电性粒子,因此在评价用玻璃基板12的背面所出现的导电性粒子的压痕也可以清晰地进行确认,利用压痕进行的导通性的确认也可以精度良好地进行。
另一方面,在比较例1中,关于输出凸块列26的中央部的第三列相对于第一列的输出端子21与输出凸块25的距离比例D,相对于两端部的比例d,大于130%,成为损害导电性的结果。此外,在比较例1中,导电性粒子的压入不足,利用压痕观察进行的导通性的确认也变得困难。
[第三实施例]
接着,对第三实施例进行说明。在第三实施例中,关于实施例1~4和比较例1涉及的各连接体样品,算出图7中所示的输入凸块列24的各两端和在最外侧排列的第三列的输出凸块列26-3的两端的输出端子21与输出凸块25的平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3的比例(=D3/dAVE)。这是因为,在最外侧排列的输入凸块列24、输出凸块列26的各两端易于受到热压接头的推压力,都是输出端子21与输出凸块25的距离窄,易于压入导电性粒子,因此关于输出端子21与输出凸块25的距离最易于扩大的第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3,通过与在最外侧排列的输入凸块列24、输出凸块列26的各两端的输出端子21与输出凸块25的平均距离dAVE进行对比来评价。认为,在第三列的输出凸块列26-3的中央部的距离D3与在最外侧排列的输入凸块列24、输出凸块列26的各两端部的平均距离dAVE没有很大差别的情况下,其它全部的输出端子21与输出凸块25都与在最外侧排列的输入凸块列24、输出凸块列26的各两端部同样地,距离窄而压入导电性粒子。
另外,在本实施例中,由于输入凸块列24以一列排列,因此测定对象成为在该输入凸块列24的两端设置的输入凸块23L、23R,但在并置有多列输入凸块列24的情况下,将在最外侧排列的输入凸块列24的两端设置的输入凸块23设为输出端子21与输出凸块25的平均距离dAVE的测定对象。同样地,在本实施例中,输出凸块列26以三列排列,因此在最外侧排列的第三列的输出凸块列26-3的两端设置的输出凸块25L、25R成为输出端子21与输出凸块25的平均距离dAVE的测定对象。
[表3]
[实施例1的结果]
如表3所示,在使用了评价用IC(1×20mm)的实施例1中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的59%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的60%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(4μm)的58%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的61%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为59.5%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=64%)的比例(=D3/dAVE)为1.08。
在使用了评价用IC(1.5×20mm)的实施例1中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的60%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的62%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(4μm)的62%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的61%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为61.25%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=65%)的比例(=D3/dAVE)为1.04。
在使用了评价用IC(2×20mm)的实施例1中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的62%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的61%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(4μm)的59%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的60%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为60.5%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=67%)的比例(=D3/dAVE)为1.06。
[实施例2的结果]
在使用了评价用IC(1×20mm)的实施例2中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的59%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的57%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(4μm)的60%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的58%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为58.5%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=62%)的比例(=D3/dAVE)为1.06。
在使用了评价用IC(1.5×20mm)的实施例2中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的58%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的58%,输入凸块列24的左端的输入凸块23L与输入端子的距离d-24L为导电性粒子直径(4μm)的56%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的55%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为56.75%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=64%)的比例(=D3/dAVE)为1.09。
在使用了评价用IC(2×20mm)的实施例2中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的59%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的57%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(4μm)的56%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的58%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为57.5%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=69%)的比例(=D3/dAVE)为1.08。
[实施例3的结果]
在使用了评价用IC(1×20mm)的实施例3中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(3μm)的68%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(3μm)的67%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(3μm)的65%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(3μm)的66%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为66.5%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=70%)的比例(=D3/dAVE)为1.05。
在使用了评价用IC(1.5×20mm)的实施例3中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(3μm)的69%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(3μm)的67%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(3μm)的64%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(3μm)的65%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为66.25%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=74%)的比例(=D3/dAVE)为1.06。
在使用了评价用IC(2×20mm)的实施例3中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(3μm)的69%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(3μm)的67%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(3μm)的64%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(3μm)的66%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为66.5%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=80%)的比例(=D3/dAVE)为1.05。
[实施例4的结果]
在使用了评价用IC(1×20mm)的实施例4中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(5μm)的57%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(5μm)的58%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(5μm)的54%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(5μm)的56%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为56.25%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=57%)的比例(=D3/dAVE)为1.01。
在使用了评价用IC(1.5×20mm)的实施例4中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(5μm)的55%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(5μm)的57%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(5μm)的55%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(5μm)的56%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为55.75%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=57%)的比例(=D3/dAVE)为1.02。
在使用了评价用IC(2×20mm)的实施例4中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(5μm)的57%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(5μm)的56%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(5μm)的58%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(5μm)的55%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为56.5%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=59%)的比例(=D3/dAVE)为1.01。
[比较例1的结果]
在使用了评价用IC(1×20mm)的比较例1中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的59%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的61%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(4μm)的57%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的58%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为58.75%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=84%)的比例(=D3/dAVE)为1.43。
在使用了评价用IC(1.5×20mm)的比较例1中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的60%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的61%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(4μm)的56%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的57%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为58.5%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=95%)的比例(=D3/dAVE)为1.44。
在使用了评价用IC(2×20mm)的比较例1中,第三列的输出凸块列26-3的左端的输出凸块25L与输出端子21的距离d-26L为导电性粒子直径(4μm)的59%,第三列的输出凸块列26-3的右端的输出凸块25R与输出端子21的距离d-26R为导电性粒子直径(4μm)的58%,输入凸块列24的左端的输入凸块23L与输入端子19的距离d-24L为导电性粒子直径(4μm)的56%,输入凸块列24的右端的输入凸块23R与输入端子19的距离d-24R为导电性粒子直径(4μm)的54%,两输出凸块25L、25R和两输入凸块23L、23R的输入输出端子的平均距离dAVE为56.75%。该平均距离dAVE、与第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3(=108%)的比例(=D3/dAVE)为1.48。
[第三实施例的考察]
如表3所示,根据使用规则排列有导电性粒子的各向异性导电膜而制成的实施例1~4涉及的连接体样品,关于端子与凸块的距离最易于扩大的第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3,都为在最外侧排列的输入凸块列24、输出凸块列26的各两端部的输出端子21与输出凸块25的平均距离dAVE的110%以下,基本上没有差别,压入导电性粒子并具备良好的导通性。
因此认为,实施例1~4中,在输出端子21与输出凸块25的距离最易于扩大的第三列的输出凸块列26-3的中央部,具有与在最外侧排列的输入凸块列24、输出凸块列26的各两端部没有很大差别的距离,因此第二列、第三列的其它的输出端子21与输出凸块25的距离也与输入凸块列24、输出凸块列26的两端部同样地窄,通过导电性粒子的压缩而具有良好的导电性。此外,根据实施例1~4涉及的连接体样品,在第三列的输出凸块列26-3的中央部也压入导电性粒子,因此在评价用玻璃基板12的背面所出现的导电性粒子的压痕也可以清晰地进行确认,利用压痕进行的导通性的确认也可以精度良好地进行。
另一方面,在比较例1中,第三列的输出凸块列26-3的中央部的输出端子21与输出凸块25的距离D3相对于在最外侧排列的输入凸块列24、输出凸块列26的两端部的输出端子21与输出凸块25的平均距离dAVE大于110%,成为损害导电性的结果。此外,在比较例1中,导电性粒子的压入不足,利用压痕观察进行的导通性的确认也变得困难。
[第四实施例]
接着,对第四实施例进行说明。在第四实施例中,作为评价元件,使用在捕捉导电性粒子的凸块面具有凹凸部的IC来形成连接体样品。将该凹凸部的最大高低差为导电性粒子的粒径的50%以内的IC用于评价。这是通过用高精度形状测定系统(KS-1100,(株)keyence)对连接前的凸块表面进行测定,进一步由截面观察的结果求出。评价的凸块面的凹凸的最大高低差在实施例1、2和比较例1中为2μm,在实施例3中为1.5μm,在实施例4中为2.5μm。
关于这样的各连接体样品,对于凹部区域与凸部区域的粒子捕捉数进行计数。另外,以凸块面中凹部区域与凸部区域的面积比例各自成为50%的方式设定凹部区域和凸部区域。凹部区域与凸部区域的面积分别以凸块整个表面的35%以上存在。
第四实施例涉及的IC的外形、凸块的尺寸和凸块间间隙宽度与上述的评价用IC相同。此外,第四实施例涉及的连接有IC的评价用基板与上述的第一~三的实施例涉及的评价用玻璃基板相同。
[表4]
在第四实施例中,关于实施例1~4和比较例1涉及的连接体样品,从评价用玻璃基板的背面观察在输出端子处出现的压痕,对图7中A-A’所示的第一、三列的输出凸块列26-1、26-3的中央部的输出凸块25的凹部区域与凸部区域的导电性粒子的捕捉数进行计数。
[实施例1的结果]
在使用了评价用IC(1×20mm)的实施例1中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为17个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为16个。
在使用了评价用IC(1.5×20mm)的实施例1中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为3个,凸部区域上的粒子捕捉数为19个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为15个。
在使用了评价用IC(2×20mm)的实施例1中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为3个,凸部区域上的粒子捕捉数为18个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为14个。
[实施例2的结果]
在使用了评价用IC(1×20mm)的实施例2中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为0个,凸部区域上的粒子捕捉数为4个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为0个,凸部区域上的粒子捕捉数为3个。
在使用了评价用IC(1.5×20mm)的实施例2中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为0个,凸部区域上的粒子捕捉数为5个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为3个。
在使用了评价用IC(2×20mm)的实施例2中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为4个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为0个,凸部区域上的粒子捕捉数为3个。
[实施例3的结果]
在使用了评价用IC(1×20mm)的实施例3中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为4个,凸部区域上的粒子捕捉数为37个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为36个。
在使用了评价用IC(1.5×20mm)的实施例3中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为3个,凸部区域上的粒子捕捉数为34个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为3个,凸部区域上的粒子捕捉数为31个。
在使用了评价用IC(2×20mm)的实施例3中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为3个,凸部区域上的粒子捕捉数为35个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为30个。
[实施例4的结果]
在使用了评价用IC(1×20mm)的实施例4中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为14个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为13个。
在使用了评价用IC(1.5×20mm)的实施例4中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为3个,凸部区域上的粒子捕捉数为15个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为11个。
在使用了评价用IC(2×20mm)的实施例4中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为15个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为10个。
[比较例1的结果]
在使用了评价用IC(1×20mm)的比较例1中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为10个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为3个。
在使用了评价用IC(1.5×20mm)的比较例1中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为11个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为1个,凸部区域上的粒子捕捉数为1个。
在使用了评价用IC(2×20mm)的比较例1中,第一列的输出凸块列26-1的中央部的输出凸块25的凹部区域上的粒子捕捉数为2个,凸部区域上的粒子捕捉数为12个,第三列的输出凸块列26-3的中央部的输出凸块25的凹部区域上的粒子捕捉数为0个,凸部区域上的粒子捕捉数为0个。
[第四实施例的考察]
如表4所示,根据使用规则排列有导电性粒子的各向异性导电膜而制成的实施例1~4涉及的连接体样品,都是在第一列的输出凸块列26-1、第三列的输出凸块列26-3的中央部的输出凸块25的凸部区域观察到3个以上的压痕,第一列与第三列基本上没有差别,通过导电性粒子的压缩而具备良好的导通性。这是因为,在捕捉导电性粒子的凸块面所形成的凹部区域中不能充分地压入导电性粒子的情况下,也会通过规则排列导电性粒子而在凸部区域捕捉,因此在该凸部区域中充分地压入。
因此认为,实施例1~4中,在输出端子21与输出凸块25的距离最易于扩大的第三列的输出凸块列26-3的中央部,具有与第一列没有很大差别的压痕和粒子捕捉数,因此在第二列、第三列的其它输出凸块25也同样地观察到压痕和粒子捕捉数,通过导电性粒子的压缩而具有良好的导电性。此外,根据实施例1~4涉及的连接体样品,在第三列的输出凸块列26-3的中央也压入导电性粒子,因此评价用玻璃基板12的背面所出现的导电性粒子的压痕也可以清晰地进行确认,利用压痕进行的导通性的确认也可以精度良好地进行。
另一方面,在比较例1中,存在有在第一列的输出凸块列26-1、第三列的输出凸块列26-3的中央部的输出凸块25的凸部区域中观察不到压痕的凸块,由于导电性粒子的压入不足而存在导通性降低的担忧。这是因为,导电性粒子无规地分散,因此在凸部区域被捕捉的粒子数产生偏差。因此,在比较例1中,导电性粒子不附着于凸部区域,导通性、导通可靠性低的凸块的产生在概率上无法避免。
符号的说明
1:各向异性导电膜;2:剥离膜;3:粘合剂树脂层;4:导电性粒子;6:卷绕卷轴;10:液晶显示面板;11、12:透明基板;12a:边缘部;13:密封件;14:液晶;15:面板显示部;16、17:透明电极;18:液晶驱动用IC;18a:安装面;19:输入端子;20:输入端子列;21:输出端子;22:输出端子列;23:输入凸块;25:输出凸块;24:输入凸块列;26:输出凸块列;27:安装部;31:基板侧对准标记;32:IC侧对准标记;33:热压接头;35:端子间间隙。
Claims (15)
1.一种连接体,其是具备电路基板和电子部件、且通过排列有导电性粒子的各向异性导电粘接剂将所述电子部件连接至所述电路基板上的连接体,
所述电路基板是排列有多个端子的端子列在与所述端子的排列方向正交的宽度方向上并置多列的电路基板,
所述电子部件是排列有多个凸块的凸块列在与所述凸块的排列方向正交的宽度方向上、与所述多列端子列对应地并置多列的电子部件,
在所述电路基板和所述电子部件的各自外侧排列的相对置的端子与凸块的距离大于在所述电路基板和所述电子部件的各自内侧排列的相对置的端子与凸块的距离。
2.根据权利要求1所述的连接体,其中,在所述电路基板和所述电子部件的各自外侧排列的相对置的端子与凸块的距离为:在所述电路基板和所述电子部件的各自内侧排列的相对置的端子与凸块的距离的130%以内。
3.根据权利要求2所述的连接体,其中,在所述电子部件的所述凸块列的中心部,在所述电路基板和所述电子部件的各自外侧排列的相对置的端子与凸块的距离为:在所述电路基板和所述电子部件的各自内侧排列的相对置的端子与凸块的距离的130%以内。
4.根据权利要求1~3的任一项所述的连接体,其中,在所述电路基板和所述电子部件的各自外侧排列的相对置的端子与凸块的距离Do与在所述电路基板和所述电子部件的各自内侧排列的相对置的端子与凸块的距离Di的比例D即Do/Di为:所述电子部件的所述凸块的排列方向上的两端的、在所述电路基板和所述电子部件的各自外侧排列的相对置的端子与凸块的平均距离do与在所述电路基板和所述电子部件的各自内侧排列的相对置的端子与凸块的平均距离di的比例d即do/di的130%以内。
5.根据权利要求4所述的连接体,其中,所述电子部件的所述凸块列的中心部的所述比例D为所述比例d的130%以内。
6.根据权利要求1~5的任一项所述的连接体,其中,所述电路基板具有:形成有一列所述端子列的第一端子区域、和在宽度方向上并置有多列所述端子列的第二端子区域,
所述电子部件具有:形成有一列所述凸块列的第一凸块区域、和在宽度方向上并置有多列所述凸块列的第二凸块区域,
在所述电路基板的所述第二端子区域和所述电子部件的所述第二凸块区域中在各自外侧排列的相对置的端子与凸块的距离Do为:
在所述电路基板的所述第二端子区域和所述电子部件的所述第二凸块区域的各自外侧排列的端子列与凸块列的两端部的相对置的端子与凸块的距离、与所述电路基板的所述第一端子区域和所述电子部件的所述第一凸块区域的所述端子列与凸块列的两端部的相对置的端子与凸块的距离的平均距离dAVE的110%以内。
7.根据权利要求6所述的连接体,其中,当在所述第一端子区域中多列所述端子列在与所述端子的排列方向正交的宽度方向上并置多列、并且在所述第一凸块区域中所述凸块列在与所述凸块的排列方向正交的宽度方向上并置多列的情况下,
所述第一端子区域的所述端子列和所述第一凸块区域的所述凸块列为:在所述第一端子区域和所述第一凸块区域的各自外侧排列的端子列和凸块列。
8.根据权利要求6所述的连接体,其中,所述电子部件的所述凸块列的中心部的所述距离Do为所述平均距离dAVE的110%以内。
9.根据权利要求1~3的任一项所述的连接体,其中,使用排列有所述导电性粒子的所述各向异性导电粘接剂来形成。
10.根据权利要求1~3的任一项所述的连接体,其中,所述导电性粒子的平均粒径为5μm以下。
11.根据权利要求1~3的任一项所述的连接体,其中,所述凸块在捕捉所述导电性粒子的凸块面形成有凹凸部,所述凹凸部具有所述导电性粒子的粒径的50%以内的高低差。
12.根据权利要求4或5所述的连接体,其中,所述凸块在捕捉所述导电性粒子的凸块面形成有凹凸部,所述凹凸部具有所述导电性粒子的粒径的50%以内的高低差。
13.根据权利要求6~8的任一项所述的连接体,其中,所述凸块在捕捉所述导电性粒子的凸块面形成有凹凸部,所述凹凸部具有所述导电性粒子的粒径的50%以内的高低差。
14.一种连接体的制造方法,其是具备电路基板和电子部件、通过排列有导电性粒子的各向异性导电粘接剂而在所述电路基板上搭载所述电子部件、推压所述电子部件并且使所述各向异性导电粘接剂固化的连接体的制造方法,
所述电路基板是排列有多个端子的端子列在宽度方向上并置多列的电路基板,
所述电子部件是排列有多个凸块的凸块列在宽度方向上、与所述多列端子列对应地并置多列的电子部件,
在所述电路基板和所述电子部件的各自外侧排列的相对置的端子与凸块的距离大于在所述电路基板和所述电子部件的各自内侧排列的相对置的端子与凸块的距离。
15.根据权利要求14所述的连接体的制造方法,其中,所述各向异性导电粘接剂具备含有所述导电性粒子的导电性粒子含有层、以及不含有所述导电性粒子的绝缘性粘接剂层,所述导电性粒子含有层比所述绝缘性粘接剂层粘度高。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108987439A (zh) * | 2018-06-21 | 2018-12-11 | 武汉华星光电半导体显示技术有限公司 | 显示面板和显示装置 |
CN110596925A (zh) * | 2018-06-12 | 2019-12-20 | 夏普株式会社 | 电路基板 |
CN114999951A (zh) * | 2022-05-30 | 2022-09-02 | 电子科技大学 | 各向异性导电胶膜互连电气失效可视化分析芯片制备方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6476747B2 (ja) * | 2014-10-28 | 2019-03-06 | デクセリアルズ株式会社 | 異方性導電フィルム及び接続構造体 |
TWI733504B (zh) * | 2014-11-17 | 2021-07-11 | 日商迪睿合股份有限公司 | 異向性導電膜及連接構造體 |
KR102535557B1 (ko) | 2016-03-07 | 2023-05-24 | 삼성디스플레이 주식회사 | 표시 장치 및 전자 디바이스 |
JP6945276B2 (ja) * | 2016-03-31 | 2021-10-06 | デクセリアルズ株式会社 | 異方性導電接続構造体 |
KR20180041296A (ko) * | 2016-10-13 | 2018-04-24 | 삼성디스플레이 주식회사 | 표시 패널 |
KR102581839B1 (ko) * | 2018-10-02 | 2023-09-22 | 삼성디스플레이 주식회사 | 표시 장치 |
US10818634B2 (en) * | 2018-10-08 | 2020-10-27 | HKC Corporation Limited | Display panel, method for manufacturing the display panel, and display device |
CN109168250B (zh) * | 2018-10-24 | 2020-04-17 | 合肥鑫晟光电科技有限公司 | 一种电路板及其制作方法、使用方法、显示装置 |
EP3879566A4 (en) * | 2018-11-26 | 2021-12-01 | Huawei Technologies Co., Ltd. | PACKAGING STRUCTURE AND COMMUNICATION DEVICE |
KR102708431B1 (ko) * | 2018-11-28 | 2024-09-25 | 삼성디스플레이 주식회사 | 본딩 장치 및 본딩 방법 |
CN113871396A (zh) * | 2020-06-30 | 2021-12-31 | 北京小米移动软件有限公司 | 显示面板、覆晶薄膜、显示设备和制作方法 |
CN116195049B (zh) * | 2020-10-01 | 2025-01-17 | 三菱电机株式会社 | 半导体装置 |
US11721551B2 (en) * | 2021-01-26 | 2023-08-08 | Tokyo Electron Limited | Localized stress regions for three-dimension chiplet formation |
CN113078147B (zh) * | 2021-02-22 | 2023-08-15 | 上海易卜半导体有限公司 | 半导体封装方法、半导体组件以及包含其的电子设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1131717A (ja) * | 1997-07-11 | 1999-02-02 | Casio Comput Co Ltd | 半導体チップ及びそれを備えた表示装置 |
JP2000340613A (ja) * | 1999-05-28 | 2000-12-08 | Seiko Epson Corp | Icチップの接続方法及び液晶装置の製造方法 |
JP2003202583A (ja) * | 2002-01-08 | 2003-07-18 | Matsushita Electric Ind Co Ltd | 液晶パネル、液晶パネルの駆動回路素子及びそれらの接続方法 |
CN1629917A (zh) * | 2003-12-15 | 2005-06-22 | 三星电子株式会社 | 驱动芯片及具有该驱动芯片的显示装置 |
JP2008210908A (ja) * | 2007-02-26 | 2008-09-11 | Tokai Rubber Ind Ltd | 電子部品の実装方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0692137B1 (en) * | 1994-01-27 | 2002-04-10 | Loctite (Ireland) Limited | Compositions and methods for providing anisotropic conductive pathways and bonds between two sets of conductors |
JPH11307902A (ja) * | 1998-04-27 | 1999-11-05 | Toshiba Corp | 回路基板 |
US6926796B1 (en) * | 1999-01-29 | 2005-08-09 | Matsushita Electric Industrial Co., Ltd. | Electronic parts mounting method and device therefor |
JP2003303852A (ja) * | 2002-04-10 | 2003-10-24 | Seiko Epson Corp | 半導体チップの実装構造、配線基板、電気光学装置及び電子機器 |
JP4115832B2 (ja) | 2002-12-27 | 2008-07-09 | 東芝松下ディスプレイテクノロジー株式会社 | 半導体素子及び液晶表示パネル |
JP2004341430A (ja) * | 2003-05-19 | 2004-12-02 | Sony Corp | 再生装置および再生方法、記録媒体、並びにプログラム |
KR101051013B1 (ko) | 2003-12-16 | 2011-07-21 | 삼성전자주식회사 | 구동 칩 및 이를 갖는 표시장치 |
JP2005216611A (ja) * | 2004-01-28 | 2005-08-11 | Sumitomo Bakelite Co Ltd | 異方導電フィルムの製造方法 |
JP2007035828A (ja) * | 2005-07-26 | 2007-02-08 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP4789738B2 (ja) | 2006-07-28 | 2011-10-12 | 旭化成イーマテリアルズ株式会社 | 異方導電性フィルム |
CN101840080B (zh) * | 2009-03-19 | 2011-11-16 | 瀚宇彩晶股份有限公司 | 液晶显示器 |
KR20110046887A (ko) * | 2009-10-29 | 2011-05-06 | 엘지디스플레이 주식회사 | 표시장치 |
CN102103428B (zh) * | 2009-12-18 | 2013-01-02 | 群康科技(深圳)有限公司 | 触控显示装置的软性电路板结合方法及触控显示装置 |
US9740067B2 (en) * | 2012-09-03 | 2017-08-22 | Sharp Kabushiki Kaisha | Display device and method for producing same |
CN104704621B (zh) * | 2012-10-11 | 2017-08-25 | 夏普株式会社 | 驱动芯片和显示装置 |
FR3009136B1 (fr) * | 2013-07-29 | 2017-10-27 | Commissariat Energie Atomique | Procede de fabrication d'une microbatterie au lithium |
-
2014
- 2014-11-28 JP JP2014242270A patent/JP2016029698A/ja active Pending
-
2015
- 2015-07-22 KR KR1020237000997A patent/KR102637835B1/ko active IP Right Grant
- 2015-07-22 CN CN201580035591.9A patent/CN106664804A/zh active Pending
- 2015-07-22 WO PCT/JP2015/070884 patent/WO2016013593A1/ja active Application Filing
- 2015-07-22 KR KR1020167033437A patent/KR20170033266A/ko active Application Filing
- 2015-07-22 US US15/324,759 patent/US10373927B2/en active Active
- 2015-07-22 TW TW104123628A patent/TWI663697B/zh active
- 2015-07-22 CN CN202110417525.5A patent/CN113079637A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1131717A (ja) * | 1997-07-11 | 1999-02-02 | Casio Comput Co Ltd | 半導体チップ及びそれを備えた表示装置 |
JP2000340613A (ja) * | 1999-05-28 | 2000-12-08 | Seiko Epson Corp | Icチップの接続方法及び液晶装置の製造方法 |
JP2003202583A (ja) * | 2002-01-08 | 2003-07-18 | Matsushita Electric Ind Co Ltd | 液晶パネル、液晶パネルの駆動回路素子及びそれらの接続方法 |
CN1629917A (zh) * | 2003-12-15 | 2005-06-22 | 三星电子株式会社 | 驱动芯片及具有该驱动芯片的显示装置 |
JP2008210908A (ja) * | 2007-02-26 | 2008-09-11 | Tokai Rubber Ind Ltd | 電子部品の実装方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110596925A (zh) * | 2018-06-12 | 2019-12-20 | 夏普株式会社 | 电路基板 |
CN110596925B (zh) * | 2018-06-12 | 2022-02-22 | 夏普株式会社 | 电路基板 |
CN108987439A (zh) * | 2018-06-21 | 2018-12-11 | 武汉华星光电半导体显示技术有限公司 | 显示面板和显示装置 |
CN114999951A (zh) * | 2022-05-30 | 2022-09-02 | 电子科技大学 | 各向异性导电胶膜互连电气失效可视化分析芯片制备方法 |
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