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CA1333466C - Methode et appareil servant a la fusion de zone - Google Patents

Methode et appareil servant a la fusion de zone

Info

Publication number
CA1333466C
CA1333466C CA 582966 CA582966A CA1333466C CA 1333466 C CA1333466 C CA 1333466C CA 582966 CA582966 CA 582966 CA 582966 A CA582966 A CA 582966A CA 1333466 C CA1333466 C CA 1333466C
Authority
CA
Canada
Prior art keywords
temperature
heating
semiconductor material
elements
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA 582966
Other languages
English (en)
Inventor
Paul M. Zavracky
Jack P. Salerno
Matthew M. Zavracky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kopin Corp
Original Assignee
Kopin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kopin Corp filed Critical Kopin Corp
Application granted granted Critical
Publication of CA1333466C publication Critical patent/CA1333466C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
CA 582966 1987-11-13 1988-11-14 Methode et appareil servant a la fusion de zone Expired - Fee Related CA1333466C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12002287A 1987-11-13 1987-11-13
US120,022 1987-11-13

Publications (1)

Publication Number Publication Date
CA1333466C true CA1333466C (fr) 1994-12-13

Family

ID=22387820

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 582966 Expired - Fee Related CA1333466C (fr) 1987-11-13 1988-11-14 Methode et appareil servant a la fusion de zone

Country Status (2)

Country Link
CA (1) CA1333466C (fr)
WO (1) WO1989004387A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3433627A (en) * 1965-12-29 1969-03-18 Cominco Ltd Zone refining
US4086424A (en) * 1977-03-31 1978-04-25 Mellen Sr Robert H Dynamic gradient furnace and method
DE3279842D1 (en) * 1981-04-16 1989-08-31 Massachusetts Inst Technology Lateral epitaxial growth by seeded solidification
JPS61196515A (ja) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp 帯域溶融型半導体製造装置
JPS61289617A (ja) * 1985-06-18 1986-12-19 Sony Corp 薄膜単結晶の製造装置

Also Published As

Publication number Publication date
WO1989004387A1 (fr) 1989-05-18

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Legal Events

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