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ATE409860T1 - Gassensor mit einer dünnen halbleitenden schicht - Google Patents

Gassensor mit einer dünnen halbleitenden schicht

Info

Publication number
ATE409860T1
ATE409860T1 AT04728860T AT04728860T ATE409860T1 AT E409860 T1 ATE409860 T1 AT E409860T1 AT 04728860 T AT04728860 T AT 04728860T AT 04728860 T AT04728860 T AT 04728860T AT E409860 T1 ATE409860 T1 AT E409860T1
Authority
AT
Austria
Prior art keywords
gas sensor
semiconductive layer
thin semiconductive
film
thin
Prior art date
Application number
AT04728860T
Other languages
English (en)
Inventor
Giorgio Sberveglieri
Elisabetta Comini
Guido Faglia
Camilla Baratto
Matteo Falasconi
Original Assignee
Sacmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sacmi filed Critical Sacmi
Application granted granted Critical
Publication of ATE409860T1 publication Critical patent/ATE409860T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
AT04728860T 2003-04-24 2004-04-22 Gassensor mit einer dünnen halbleitenden schicht ATE409860T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000318A ITTO20030318A1 (it) 2003-04-24 2003-04-24 Dispositivo sensore di gas a film sottile semiconduttore.

Publications (1)

Publication Number Publication Date
ATE409860T1 true ATE409860T1 (de) 2008-10-15

Family

ID=33187398

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04728860T ATE409860T1 (de) 2003-04-24 2004-04-22 Gassensor mit einer dünnen halbleitenden schicht

Country Status (9)

Country Link
US (1) US7441440B2 (de)
EP (1) EP1616172B1 (de)
JP (1) JP2006524326A (de)
KR (1) KR20060021822A (de)
AT (1) ATE409860T1 (de)
DE (1) DE602004016837D1 (de)
ES (1) ES2312993T3 (de)
IT (1) ITTO20030318A1 (de)
WO (1) WO2004095013A1 (de)

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US7253002B2 (en) 2003-11-03 2007-08-07 Advanced Technology Materials, Inc. Fluid storage and dispensing vessels having colorimetrically verifiable leak-tightness, and method of making same
KR100810122B1 (ko) * 2007-03-07 2008-03-06 한국에너지기술연구원 팔라듐과 백금이 분산된 타이타늄산화물 나노튜브를 적용한접촉연소식 가스 센서
US8187903B2 (en) * 2009-01-13 2012-05-29 Robert Bosch Gmbh Method of epitaxially growing piezoresistors
US8383048B2 (en) 2010-07-21 2013-02-26 Schlumberger Technology Corporation Microsensor for mercury
US9624096B2 (en) 2010-12-24 2017-04-18 Qualcomm Incorporated Forming semiconductor structure with device layers and TRL
US8536021B2 (en) 2010-12-24 2013-09-17 Io Semiconductor, Inc. Trap rich layer formation techniques for semiconductor devices
US8481405B2 (en) 2010-12-24 2013-07-09 Io Semiconductor, Inc. Trap rich layer with through-silicon-vias in semiconductor devices
EP2656388B1 (de) 2010-12-24 2020-04-15 QUALCOMM Incorporated Auffangschicht für halbleiterbauelemente
US9553013B2 (en) 2010-12-24 2017-01-24 Qualcomm Incorporated Semiconductor structure with TRL and handle wafer cavities
US9754860B2 (en) 2010-12-24 2017-09-05 Qualcomm Incorporated Redistribution layer contacting first wafer through second wafer
US9791403B2 (en) 2012-10-05 2017-10-17 The Regents Of The University Of California Nanoparticle-based gas sensors and methods of using the same
US20140260546A1 (en) * 2013-03-15 2014-09-18 Odosodo, Inc. Combinational Array Gas Sensor
ITBO20130671A1 (it) 2013-12-02 2015-06-03 Sacmi Metodo e dispositivo per l'analisi di un campione di gas
TWI557527B (zh) * 2015-12-28 2016-11-11 財團法人工業技術研究院 具儲熱元件的微機電溫度控制系統
CN106255243A (zh) * 2016-08-17 2016-12-21 电子科技大学 一种调节温度均匀性的蛇形薄膜加热器及其调温方法
EP3315956A1 (de) * 2016-10-31 2018-05-02 Sensirion AG Multiparametrischer sensor mit brückenstruktur
USD953183S1 (en) 2019-11-01 2022-05-31 Nvent Services Gmbh Fuel sensor
US11353381B1 (en) * 2020-06-09 2022-06-07 Applied Materials, Inc. Portable disc to measure chemical gas contaminants within semiconductor equipment and clean room

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DE3005928A1 (de) * 1980-02-16 1981-09-10 Robert Bosch Gmbh, 7000 Stuttgart Beheizte ionenstromsonde fuer hohe zemperaturen
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US6786076B2 (en) * 2002-11-25 2004-09-07 Reliable Instruments Llc Thin film gas sensor

Also Published As

Publication number Publication date
KR20060021822A (ko) 2006-03-08
DE602004016837D1 (de) 2008-11-13
ES2312993T3 (es) 2009-03-01
ITTO20030318A1 (it) 2004-10-25
US20040211667A1 (en) 2004-10-28
WO2004095013A1 (en) 2004-11-04
EP1616172B1 (de) 2008-10-01
US7441440B2 (en) 2008-10-28
JP2006524326A (ja) 2006-10-26
EP1616172A1 (de) 2006-01-18

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