ATE537565T1 - Lichtemittierende halbleitervorrichtung mit metallsubstrat - Google Patents

Lichtemittierende halbleitervorrichtung mit metallsubstrat

Info

Publication number: ATE537565T1
Authority: AT; Austria
Prior art keywords: layer; light; semiconductor device; metal substrate; emitting semiconductor
Prior art date: 2005-10-27

Application number

AT06805076T

Other languages

English (en)

Inventor

Fengyi Jiang

Chuanbing Xiong

Wenqing Fang

Li Wang

Original Assignee

Lattice Power Jiangxi Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-10-27

Filing date

2006-10-26

Publication date

2011-12-15

2006-10-26 Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp

2011-12-15 Application granted granted Critical

2011-12-15 Publication of ATE537565T1 publication Critical patent/ATE537565T1/de

Classifications

- H01L33/0093—
- H01L33/32—
- H01L33/40—
- H01L33/641—

Landscapes

Led Devices (AREA)
Led Device Packages (AREA)

AT06805076T 2005-10-27 2006-10-26 Lichtemittierende halbleitervorrichtung mit metallsubstrat ATE537565T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
CNB2005100308687A CN100474642C (zh)	2005-10-27	2005-10-27	含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法
PCT/CN2006/002871 WO2007048346A1 (en)	2005-10-27	2006-10-26	Semiconductor light-emitting device with metal support substrate

Publications (1)

Publication Number	Publication Date
ATE537565T1 true ATE537565T1 (de)	2011-12-15

Family

ID=36805820

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT06805076T ATE537565T1 (de)	2005-10-27	2006-10-26	Lichtemittierende halbleitervorrichtung mit metallsubstrat

Country Status (7)

Country	Link
US (1)	US8361880B2 (de)
EP (1)	EP1941556B1 (de)
JP (1)	JP2009514198A (de)
KR (1)	KR20080060223A (de)
CN (1)	CN100474642C (de)
AT (1)	ATE537565T1 (de)
WO (1)	WO2007048346A1 (de)

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US7829909B2 (en) *	2005-11-15	2010-11-09	Verticle, Inc.	Light emitting diodes and fabrication methods thereof
KR100661602B1 (ko) *	2005-12-09	2006-12-26	삼성전기주식회사	수직 구조 질화갈륨계 ｌｅｄ 소자의 제조방법
CN101295758B (zh) *	2007-04-29	2013-03-06	晶能光电（江西）有限公司	含有碳基衬底的铟镓铝氮发光器件以及其制造方法
EP2302705B1 (de) *	2008-06-02	2018-03-14	LG Innotek Co., Ltd.	Haltesubstrat zur herstellung eines halbleiter-leuchtbauelements und halbleiter-leuchtbauelement damit
CN102067338A (zh) *	2008-08-19	2011-05-18	晶能光电（江西）有限公司	用于产生任意颜色的半导体发光器件
CN102067339B (zh)	2008-08-19	2013-03-06	晶能光电（江西）有限公司	一种制备具有金属衬底的InGaAlN发光二极管的方法
WO2010020077A1 (en) *	2008-08-22	2010-02-25	Lattice Power (Jiangxi) Corporation	Method for fabricating ingaain light-emitting device on a combined substrate
US8188496B2 (en)	2008-11-06	2012-05-29	Samsung Led Co., Ltd.	Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
CN101840966B (zh) *	2009-05-08	2013-07-03	晶能光电（江西）有限公司	半导体发光器件以及制备发光二极管的方法
KR20110123118A (ko)	2010-05-06	2011-11-14	삼성전자주식회사	패터닝된 발광부를 구비한 수직형 발광소자
TWI480926B (zh) *	2010-09-28	2015-04-11	Nat Univ Chung Hsing	Preparation method of epitaxial element
US8853057B2 (en)	2010-09-28	2014-10-07	National Chung-Hsing University	Method for fabricating semiconductor devices
US8436363B2 (en)	2011-02-03	2013-05-07	Soitec	Metallic carrier for layer transfer and methods for forming the same
US9142412B2 (en)	2011-02-03	2015-09-22	Soitec	Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US9082948B2 (en)	2011-02-03	2015-07-14	Soitec	Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
US8952395B2 (en)	2011-07-26	2015-02-10	Micron Technology, Inc.	Wafer-level solid state transducer packaging transducers including separators and associated systems and methods
US8497146B2 (en)	2011-08-25	2013-07-30	Micron Technology, Inc.	Vertical solid-state transducers having backside terminals and associated systems and methods
US8853668B2 (en) *	2011-09-29	2014-10-07	Kabushiki Kaisha Toshiba	Light emitting regions for use with light emitting devices
FR3059147B1 (fr) *	2016-11-18	2019-01-25	Centre National De La Recherche Scientifique	Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno

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US7538010B2 (en) *	2003-07-24	2009-05-26	S.O.I.Tec Silicon On Insulator Technologies	Method of fabricating an epitaxially grown layer
TWM255514U (en)	2003-10-16	2005-01-11	Arima Optoelectronics Corp	Structure improvement of Gallium Indium Nitride light-emitting diode
KR100586948B1 (ko) *	2004-01-19	2006-06-07	삼성전기주식회사	질화물 반도체 발광소자 및 그 제조방법
JP2005209925A (ja) *	2004-01-23	2005-08-04	Nichia Chem Ind Ltd	積層半導体基板
CN1299329C (zh) *	2004-03-04	2007-02-07	中国科学院上海光学精密机械研究所	ZnO:Al2O3或ZnO:Cr2O3导电衬底的制备方法
US20050269943A1 (en) *	2004-06-04	2005-12-08	Michael Hack	Protected organic electronic devices and methods for making the same
US7432119B2 (en) *	2005-01-11	2008-10-07	Semileds Corporation	Light emitting diode with conducting metal substrate
EP1681712A1 (de) *	2005-01-13	2006-07-19	S.O.I. Tec Silicon on Insulator Technologies S.A.	Verfahren zur Herstellung von Substraten für Optoelektronischen Anwendungen
US7635637B2 (en) *	2005-07-25	2009-12-22	Fairchild Semiconductor Corporation	Semiconductor structures formed on substrates and methods of manufacturing the same

2005
- 2005-10-27 CN CNB2005100308687A patent/CN100474642C/zh not_active Expired - Fee Related
2006
- 2006-10-26 WO PCT/CN2006/002871 patent/WO2007048346A1/en active Application Filing
- 2006-10-26 US US12/063,989 patent/US8361880B2/en not_active Expired - Fee Related
- 2006-10-26 EP EP06805076A patent/EP1941556B1/de not_active Not-in-force
- 2006-10-26 JP JP2008536913A patent/JP2009514198A/ja active Pending
- 2006-10-26 AT AT06805076T patent/ATE537565T1/de active
- 2006-10-26 KR KR1020087005774A patent/KR20080060223A/ko not_active Application Discontinuation

Also Published As

Publication number	Publication date
US20080224154A1 (en)	2008-09-18
EP1941556A1 (de)	2008-07-09
EP1941556A4 (de)	2009-06-17
CN100474642C (zh)	2009-04-01
EP1941556B1 (de)	2011-12-14
KR20080060223A (ko)	2008-07-01
CN1794476A (zh)	2006-06-28
JP2009514198A (ja)	2009-04-02
WO2007048346A1 (en)	2007-05-03
US8361880B2 (en)	2013-01-29

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