ATE440376T1 - Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats - Google Patents
Verarbeitungssystem und verfahren zum thermischen behandeln eines substratsInfo
- Publication number
- ATE440376T1 ATE440376T1 AT04757456T AT04757456T ATE440376T1 AT E440376 T1 ATE440376 T1 AT E440376T1 AT 04757456 T AT04757456 T AT 04757456T AT 04757456 T AT04757456 T AT 04757456T AT E440376 T1 ATE440376 T1 AT E440376T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- processing system
- thermally treating
- thermal treatment
- thermally
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45464103P | 2003-03-17 | 2003-03-17 | |
PCT/US2004/007866 WO2004082821A2 (en) | 2003-03-17 | 2004-03-16 | Processing system and method for thermally treating a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE440376T1 true ATE440376T1 (de) | 2009-09-15 |
Family
ID=33029906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04757456T ATE440376T1 (de) | 2003-03-17 | 2004-03-16 | Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats |
Country Status (7)
Country | Link |
---|---|
US (1) | US7079760B2 (de) |
EP (1) | EP1604389B1 (de) |
JP (1) | JP4745958B2 (de) |
AT (1) | ATE440376T1 (de) |
DE (1) | DE602004022641D1 (de) |
TW (1) | TWI242795B (de) |
WO (1) | WO2004082821A2 (de) |
Families Citing this family (71)
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JP2004075567A (ja) * | 2002-08-12 | 2004-03-11 | Idemitsu Kosan Co Ltd | オリゴアリーレン誘導体及びそれを利用した有機エレクトロルミネッセンス素子 |
US7877161B2 (en) | 2003-03-17 | 2011-01-25 | Tokyo Electron Limited | Method and system for performing a chemical oxide removal process |
US7029536B2 (en) * | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US6951821B2 (en) * | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US20060000551A1 (en) * | 2004-06-30 | 2006-01-05 | Saldana Miguel A | Methods and apparatus for optimal temperature control in a plasma processing system |
US8540843B2 (en) | 2004-06-30 | 2013-09-24 | Lam Research Corporation | Plasma chamber top piece assembly |
US7780791B2 (en) * | 2004-06-30 | 2010-08-24 | Lam Research Corporation | Apparatus for an optimized plasma chamber top piece |
JP4460418B2 (ja) * | 2004-10-13 | 2010-05-12 | 東京エレクトロン株式会社 | シールド体および真空処理装置 |
US8529738B2 (en) * | 2005-02-08 | 2013-09-10 | The Trustees Of Columbia University In The City Of New York | In situ plating and etching of materials covered with a surface film |
US8496799B2 (en) * | 2005-02-08 | 2013-07-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for in situ annealing of electro- and electroless platings during deposition |
US7510972B2 (en) * | 2005-02-14 | 2009-03-31 | Tokyo Electron Limited | Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device |
JP4860219B2 (ja) * | 2005-02-14 | 2012-01-25 | 東京エレクトロン株式会社 | 基板の処理方法、電子デバイスの製造方法及びプログラム |
US7622392B2 (en) * | 2005-02-18 | 2009-11-24 | Tokyo Electron Limited | Method of processing substrate, method of manufacturing solid-state imaging device, method of manufacturing thin film device, and programs for implementing the methods |
US20060196527A1 (en) * | 2005-02-23 | 2006-09-07 | Tokyo Electron Limited | Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods |
WO2006110437A1 (en) * | 2005-04-08 | 2006-10-19 | The Trustees Of Columbia University In The City Of New York | Systems and methods for monitoring plating and etching baths |
WO2007027907A2 (en) * | 2005-09-02 | 2007-03-08 | The Trustees Of Columbia University In The City Of New York | A system and method for obtaining anisotropic etching of patterned substrates |
WO2007072708A1 (ja) * | 2005-12-22 | 2007-06-28 | Tokyo Electron Limited | 基板処理装置 |
US7631898B2 (en) * | 2006-01-25 | 2009-12-15 | Chrysler Group Llc | Power release and locking adjustable steering column apparatus and method |
US8343280B2 (en) | 2006-03-28 | 2013-01-01 | Tokyo Electron Limited | Multi-zone substrate temperature control system and method of operating |
JP4654153B2 (ja) | 2006-04-13 | 2011-03-16 | 信越化学工業株式会社 | 加熱素子 |
US7718032B2 (en) * | 2006-06-22 | 2010-05-18 | Tokyo Electron Limited | Dry non-plasma treatment system and method of using |
US7416989B1 (en) | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
US20080045030A1 (en) * | 2006-08-15 | 2008-02-21 | Shigeru Tahara | Substrate processing method, substrate processing system and storage medium |
JP5100057B2 (ja) * | 2006-08-18 | 2012-12-19 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP5185948B2 (ja) * | 2006-12-06 | 2013-04-17 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | メッキ及びエッチング浴組成をスクリーニングするマイクロ流体システム及び方法 |
JP5084250B2 (ja) * | 2006-12-26 | 2012-11-28 | 東京エレクトロン株式会社 | ガス処理装置およびガス処理方法ならびに記憶媒体 |
US20080217293A1 (en) * | 2007-03-06 | 2008-09-11 | Tokyo Electron Limited | Processing system and method for performing high throughput non-plasma processing |
US7977249B1 (en) | 2007-03-07 | 2011-07-12 | Novellus Systems, Inc. | Methods for removing silicon nitride and other materials during fabrication of contacts |
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WO2009051923A1 (en) * | 2007-10-17 | 2009-04-23 | The Trustees Of Columbia University In The City Of New York | Systems and methods for in situ annealing of electro- and electroless platings during deposition |
US8187486B1 (en) | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
JP5374039B2 (ja) | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
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US8303715B2 (en) * | 2008-07-31 | 2012-11-06 | Tokyo Electron Limited | High throughput thermal treatment system and method of operating |
US8287688B2 (en) | 2008-07-31 | 2012-10-16 | Tokyo Electron Limited | Substrate support for high throughput chemical treatment system |
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US8058179B1 (en) | 2008-12-23 | 2011-11-15 | Novellus Systems, Inc. | Atomic layer removal process with higher etch amount |
US8985050B2 (en) * | 2009-11-05 | 2015-03-24 | The Trustees Of Columbia University In The City Of New York | Substrate laser oxide removal process followed by electro or immersion plating |
WO2012018010A1 (ja) * | 2010-08-03 | 2012-02-09 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
US8684256B2 (en) * | 2011-11-30 | 2014-04-01 | Component Re-Engineering Company, Inc. | Method for hermetically joining plate and shaft devices including ceramic materials used in semiconductor processing |
US8932690B2 (en) * | 2011-11-30 | 2015-01-13 | Component Re-Engineering Company, Inc. | Plate and shaft device |
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US9431268B2 (en) | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
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US11177128B2 (en) | 2017-09-12 | 2021-11-16 | Applied Materials, Inc. | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
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-
2003
- 2003-11-12 US US10/704,969 patent/US7079760B2/en not_active Expired - Lifetime
-
2004
- 2004-03-16 JP JP2006507205A patent/JP4745958B2/ja not_active Expired - Lifetime
- 2004-03-16 WO PCT/US2004/007866 patent/WO2004082821A2/en active Application Filing
- 2004-03-16 DE DE602004022641T patent/DE602004022641D1/de not_active Expired - Lifetime
- 2004-03-16 AT AT04757456T patent/ATE440376T1/de not_active IP Right Cessation
- 2004-03-16 EP EP04757456A patent/EP1604389B1/de not_active Expired - Lifetime
- 2004-03-17 TW TW093107047A patent/TWI242795B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2006525668A (ja) | 2006-11-09 |
US7079760B2 (en) | 2006-07-18 |
JP4745958B2 (ja) | 2011-08-10 |
TWI242795B (en) | 2005-11-01 |
US20040184792A1 (en) | 2004-09-23 |
EP1604389B1 (de) | 2009-08-19 |
WO2004082821A3 (en) | 2004-11-04 |
EP1604389A2 (de) | 2005-12-14 |
WO2004082821A2 (en) | 2004-09-30 |
TW200425240A (en) | 2004-11-16 |
DE602004022641D1 (de) | 2009-10-01 |
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