Spinelli et al., 1998 - Google Patents
Avalanche detector with ultraclean response for time-resolved photon countingSpinelli et al., 1998
View PDF- Document ID
- 10791730286755876787
- Author
- Spinelli A
- Ghioni M
- Cova S
- Davis L
- Publication year
- Publication venue
- IEEE Journal of Quantum Electronics
External Links
Snippet
Experimental tests have been carried out for characterizing the performance of a new single- photon avalanche diode. The detector is specifically designed for picosecond time- correlated single photon counting, aiming to obtain a time response free from the tail effects …
- 238000001514 detection method 0 abstract description 11
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/76—Chemiluminescence; Bioluminescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colour
- G01J3/28—Investigating the spectrum
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Spinelli et al. | Avalanche detector with ultraclean response for time-resolved photon counting | |
Cova et al. | A semiconductor detector for measuring ultraweak fluorescence decays with 70 ps FWHM resolution | |
Zappa et al. | Solid-state single-photon detectors | |
Sanzaro et al. | Single-photon avalanche diodes in a 0.16 μm BCD technology with sharp timing response and red-enhanced sensitivity | |
Collazuol et al. | Single photon timing resolution and detection efficiency of the IRST silicon photo-multipliers | |
Villa et al. | CMOS SPADs with up to 500 μm diameter and 55% detection efficiency at 420 nm | |
Gulinatti et al. | 35 ps time resolution at room temperature with large area single photon avalanche diodes | |
Nissinen et al. | A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy | |
Akindinov et al. | New results on MRS APDs | |
Karar et al. | Characterization of avalanche photodiodes for calorimetry applications | |
Hungerford et al. | Single-photon timing detectors for fluorescence lifetime spectroscopy | |
CN105021281B (en) | The measuring device and Raman diffused light spectrometer of raman scattering spectrum | |
Nagai et al. | Characterization of a large area silicon photomultiplier | |
Adamo et al. | Silicon photomultipliers signal-to-noise ratio in the continuous wave regime | |
Bonanno et al. | Characterization measurements methodology and instrumental set-up optimization for new SiPM detectors—Part II: Optical tests | |
Adamo et al. | Measurements of silicon photomultipliers responsivity in continuous wave regime | |
Bonanno et al. | Precision measurements of photon detection efficiency for SiPM detectors | |
Haba | Status and perspectives of pixelated photon detector (PPD) | |
Dinu | Silicon photomultipliers (SiPM) | |
Zappa et al. | Integrated array of avalanche photodiodes for single-photon counting | |
Rech et al. | Multipixel single-photon avalanche diode array for parallel photon counting applications | |
Acerbi et al. | Nuv and vuv sensitive silicon photomultipliers technologies optimized for operation at cryogenic temperatures | |
Zhang et al. | Simple near-infrared time-correlated single photon counting instrument with a pulsed diode laser and avalanche photodiode for time-resolved measurements in scanning applications | |
Wanitzek et al. | Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection | |
Kell et al. | Tau-SPAD: a new red sensitive single-photon counting module |