Nothing Special   »   [go: up one dir, main page]

Zhang et al., 2012 - Google Patents

Compact modeling of perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions

Zhang et al., 2012

View PDF
Document ID
9579878265184989406
Author
Zhang Y
Zhao W
Lakys Y
Klein J
Kim J
Ravelosona D
Chappert C
Publication year
Publication venue
IEEE transactions on Electron devices

External Links

Snippet

Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips owing to its scalability potential together with high thermal stability …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift register stack stores, push-down stores using magnetic elements using thin films in plane structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/08—Magnetic-field-controlled resistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
    • H03K19/168—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using thin-film devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/22—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects
    • H01L27/222—Magnetic non-volatile memory structures, e.g. MRAM

Similar Documents

Publication Publication Date Title
Zhang et al. Compact modeling of perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions
Joshi et al. From MTJ device to hybrid CMOS/MTJ circuits: A review
Kang et al. Spintronics: Emerging ultra-low-power circuits and systems beyond MOS technology
Kang et al. Modeling and exploration of the voltage-controlled magnetic anisotropy effect for the next-generation low-power and high-speed MRAM applications
Kim et al. Spin-based computing: Device concepts, current status, and a case study on a high-performance microprocessor
Zhang et al. Compact modeling and analysis of voltage-gated spin-orbit torque magnetic tunnel junction
Currivan et al. Low energy magnetic domain wall logic in short, narrow, ferromagnetic wires
Roohi et al. A tunable majority gate-based full adder using current-induced domain wall nanomagnets
Cai et al. Robust ultra-low power non-volatile logic-in-memory circuits in FD-SOI technology
Jabeur et al. Spin orbit torque non-volatile flip-flop for high speed and low energy applications
Roohi et al. Voltage-based concatenatable full adder using spin hall effect switching
Zand et al. Energy-efficient and process-variation-resilient write circuit schemes for spin hall effect MRAM device
Deng et al. Synchronous 8-bit non-volatile full-adder based on spin transfer torque magnetic tunnel junction
Jabeur et al. Compact modeling of a magnetic tunnel junction based on spin orbit torque
An et al. Full-adder circuit design based on all-spin logic device
Deng et al. Design optimization and analysis of multicontext STT-MTJ/CMOS logic circuits
Kang et al. Compact modeling and evaluation of magnetic skyrmion-based racetrack memory
de Barros Naviner et al. Stochastic computation with spin torque transfer magnetic tunnel junction
Ben-Romdhane et al. Design and analysis of racetrack memory based on magnetic domain wall motion in nanowires
Cai et al. Exploring hybrid STT-MTJ/CMOS energy solution in near-/sub-threshold regime for IoT applications
Razi et al. Design of an energy-efficient radiation-hardened non-volatile magnetic latch
Jovanović et al. Comparative analysis of MTJ/CMOS hybrid cells based on TAS and in-plane STT magnetic tunnel junctions
Zhao et al. Racetrack memory based reconfigurable computing
Nehra et al. Energy-efficient differential spin hall MRAM-based 4-2 magnetic compressor
Cai et al. Approximate computing in MOS/spintronic non-volatile full-adder