Nothing Special   »   [go: up one dir, main page]

Nguyen et al., 2015 - Google Patents

Towards wafer‐scale monocrystalline graphene growth and characterization

Nguyen et al., 2015

Document ID
7489130395149204025
Author
Nguyen V
Lee Y
Publication year
Publication venue
Small

External Links

Snippet

Since its discovery in 2004, graphene has boosted numerous fundamental sciences and technological applications due to its massless Dirac particle‐like linear band dispersion, that causes unprecedented physical properties. Among the various methods for synthesizing …
Continue reading at onlinelibrary.wiley.com (other versions)

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/04Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438Graphene
    • C01B31/0446Preparation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/0206Nanosized carbon materials
    • C01B31/022Carbon nanotubes
    • C01B31/0226Preparation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/0206Nanosized carbon materials
    • C01B31/0293Other structures, e.g. nano-onions, nano-scrolls, nano-horns, nano-cones or nano-walls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00Nano-technology for materials or surface science, e.g. nano-composites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y40/00Manufacture or treatment of nano-structures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00Structure or properties of graphene
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Similar Documents

Publication Publication Date Title
Nguyen et al. Towards wafer‐scale monocrystalline graphene growth and characterization
Khan et al. Direct CVD growth of graphene on technologically important dielectric and semiconducting substrates
Meng et al. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
Tai et al. Direct growth of graphene on silicon by metal-free chemical vapor deposition
Gao et al. Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures
Park et al. Large-area monolayer hexagonal boron nitride on Pt foil
Fang et al. A review of large-area bilayer graphene synthesis by chemical vapor deposition
Chang et al. Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition
Wu et al. In situ chemical vapor deposition of graphene and hexagonal boron nitride heterostructures
Sun et al. Direct chemical vapor deposition growth of graphene on insulating substrates
Wang et al. The coalescence behavior of two-dimensional materials revealed by multiscale in situ imaging during chemical vapor deposition growth
Huang et al. Substrate engineering for CVD growth of single crystal graphene
Mueller et al. Growing graphene on polycrystalline copper foils by ultra-high vacuum chemical vapor deposition
Liang et al. Exploring oxygen in graphene chemical vapor deposition synthesis
Kumar et al. CVD growth and processing of graphene for electronic applications
Gnisci et al. Ethanol-CVD growth of sub-mm single-crystal graphene on flat Cu surfaces
Lu et al. Defect engineering on MoS2 surface with argon ion bombardments and thermal annealing
Park et al. Thickness-controlled multilayer hexagonal boron nitride film prepared by plasma-enhanced chemical vapor deposition
Qian et al. Large-area high-quality AB-stacked bilayer graphene on h-BN/Pt foil by chemical vapor deposition
Kapitanova et al. Laterally selective oxidation of large-scale graphene with atomic oxygen
Tian et al. Synthesis of AAB‐stacked single‐crystal graphene/hBN/graphene trilayer van der Waals heterostructures by in situ CVD
Liu et al. CVD synthesis of graphene
Kulyk et al. Millimeter sized graphene domains through in situ oxidation/reduction treatment of the copper substrate
Hong et al. Controlled growth of in-plane graphene/h-BN heterostructure on a single crystal Ge substrate
Bradford et al. Transfer‐free synthesis of lateral graphene–hexagonal boron nitride heterostructures from chemically converted epitaxial graphene