Park et al., 2016 - Google Patents
Thickness-controlled multilayer hexagonal boron nitride film prepared by plasma-enhanced chemical vapor depositionPark et al., 2016
- Document ID
- 14935428603537381905
- Author
- Park J
- Choi S
- Zhao J
- Song S
- Yang W
- Kim S
- Kim K
- Lee Y
- Publication year
- Publication venue
- Current Applied Physics
External Links
Snippet
Abstract Two-dimensional (2D) hexagonal boron nitride (h-BN) is a thin insulating material that can be used to enhance the electrical and optical properties of other 2D materials when used as a substrate or a capping layer, owing to its absence of dangling bonds on the …
- 238000000623 plasma-assisted chemical vapour deposition 0 title abstract description 13
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
- C01B31/0438—Graphene
- C01B31/0446—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/0206—Nanosized carbon materials
- C01B31/0293—Other structures, e.g. nano-onions, nano-scrolls, nano-horns, nano-cones or nano-walls
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/0206—Nanosized carbon materials
- C01B31/022—Carbon nanotubes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Park et al. | Thickness-controlled multilayer hexagonal boron nitride film prepared by plasma-enhanced chemical vapor deposition | |
Huang et al. | Growth of single-layer and multilayer graphene on Cu/Ni alloy substrates | |
Braeuninger-Weimer et al. | Understanding and controlling Cu-catalyzed graphene nucleation: the role of impurities, roughness, and oxygen scavenging | |
Tay et al. | Trimethylamine borane: a new single-source precursor for monolayer h-BN single crystals and h-BCN thin films | |
Song et al. | Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation | |
Lin et al. | Surface engineering of copper foils for growing centimeter-sized single-crystalline graphene | |
Yeh et al. | Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition | |
US9355842B2 (en) | Direct and sequential formation of monolayers of boron nitride and graphene on substrates | |
Nguyen et al. | Towards wafer‐scale monocrystalline graphene growth and characterization | |
Xu et al. | Direct synthesis of graphene on SiO 2 substrates by chemical vapor deposition | |
Wang et al. | Synthesis of graphene on a polycrystalline Co film by radio-frequency plasma-enhanced chemical vapour deposition | |
CN109196139B (en) | Boron nitride material and preparation method thereof | |
Xu et al. | Wafer scale quasi single crystalline MoS2 realized by epitaxial phase conversion | |
US20150136737A1 (en) | Methods of growing uniform, large-scale, multilayer graphene film | |
Wan et al. | Interlayer coupling of a direct van der Waals epitaxial MoS 2/graphene heterostructure | |
US20150167148A1 (en) | Method for Synthesis of Uniform Bi-Layer and Few-Layer Hexagonal Boron Nitride Dielectric Films | |
Zheng et al. | Low-temperature growth of graphene on iron substrate by molecular beam epitaxy | |
Kato et al. | Fast synthesis of thin graphite film with high-performance thermal and electrical properties grown by plasma CVD using polycrystalline nickel foil at low temperature | |
Choi et al. | Precise control of chemical vapor deposition graphene layer thickness using Ni x Cu 1− x alloys | |
Hong et al. | Controlled growth of in-plane graphene/h-BN heterostructure on a single crystal Ge substrate | |
Lee et al. | Atomic layer deposition growth of SnS2 films on diluted buffered oxide etchant solution-treated substrate | |
Yun et al. | A systematic study of the synthesis of monolayer tungsten diselenide films on gold foil | |
Wu et al. | Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition | |
Tay | Chemical vapor deposition growth and characterization of two-dimensional hexagonal boron nitride | |
Lee et al. | Large-scale synthesis of graphene films by joule-heating-induced chemical vapor deposition |