Nothing Special   »   [go: up one dir, main page]

Huang et al., 2021 - Google Patents

Substrate engineering for CVD growth of single crystal graphene

Huang et al., 2021

View PDF
Document ID
6269637642926220629
Author
Huang M
Deng B
Dong F
Zhang L
Zhang Z
Chen P
Publication year
Publication venue
Small Methods

External Links

Snippet

Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next‐generation high‐performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438—Graphene
    • C01B31/0446—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/022—Carbon nanotubes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene

Similar Documents

Publication Publication Date Title
Huang et al. Substrate engineering for CVD growth of single crystal graphene
Huang et al. Growth of single-layer and multilayer graphene on Cu/Ni alloy substrates
Khan et al. Direct CVD growth of graphene on technologically important dielectric and semiconducting substrates
Sun et al. Toward epitaxial growth of misorientation-free graphene on Cu (111) foils
Wang et al. Primary nucleation-dominated chemical vapor deposition growth for uniform graphene monolayers on dielectric substrate
Chang et al. Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition
Zhao et al. Self-limiting chemical vapor deposition growth of monolayer graphene from ethanol
Nguyen et al. Towards wafer‐scale monocrystalline graphene growth and characterization
US8535553B2 (en) Large-area single- and few-layer graphene on arbitrary substrates
EP2850032B1 (en) Methods of growing uniform, large-scale, multilayer graphene films
US9187824B2 (en) Rapid synthesis of graphene and formation of graphene structures
Verguts et al. Epitaxial Al2O3 (0001)/Cu (111) template development for CVD graphene growth
Meng et al. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
Huet et al. Pressure-controlled chemical vapor deposition of single-layer graphene with millimeter-size domains on thin copper film
Burton et al. Integrated wafer scale growth of single crystal metal films and high quality graphene
Song et al. Graphene/h‐BN heterostructures: recent advances in controllable preparation and functional applications
Sarau et al. Efficient nitrogen doping of single-layer graphene accompanied by negligible defect generation for integration into hybrid semiconductor heterostructures
Oh et al. Centimeter-sized epitaxial h-BN films
Im et al. Xenon Flash Lamp‐Induced Ultrafast Multilayer Graphene Growth
Tian et al. Synthesis of AAB‐stacked single‐crystal graphene/hBN/graphene trilayer van der Waals heterostructures by in situ CVD
Geng et al. From self‐assembly hierarchical H‐Bn patterns to centimeter‐scale uniform monolayer H‐Bn film
Liu et al. CVD synthesis of graphene
Peters et al. Directing the morphology of chemical vapor deposition‐grown MoS2 on sapphire by crystal plane selection
Zhang et al. Twist the doorknob to open the electronic properties of graphene-based van der Waals structure
Ago et al. Step-templated CVD growth of aligned graphene nanoribbons supported by a single-layer graphene film