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Stefaan Decoutere
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2020 – today
- 2024
- [c29]M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS 2024: 1-6 - 2023
- [c28]Davide Favero
, A. Cavaliere, Carlo De Santi
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6 - 2022
- [c27]Olga Syshchyk
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. ESSDERC 2022: 245-248 - [c26]M. Millesimo
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS 2022: 10 - [c25]Davide Favero
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1 - [c24]Andrea Bettini, Thibault Cosnier, Alessandro Magnani, Olga Syshchyk, Matteo Borga
Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology. PRIME 2022: 273-276 - 2021
- [j21]Junichiro Nagao, Urmimala Chatterjee, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi:
An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply. IEICE Electron. Express 18(6): 20210059 (2021) - [c23]Eliana Acurio
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. IRPS 2021: 1-6 - [c22]Elena Fabris
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. IRPS 2021: 1-8 - 2020
- [c21]Kalparupa Mukherjee, Carlo De Santi
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS 2020: 1-5
2010 – 2019
- 2019
- [j20]Yuki Yamashita, Steve Stoffels
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. IEICE Electron. Express 16(22): 20190516 (2019) - [c20]Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. ESSDERC 2019: 158-161 - [c19]Steve Stoffels
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - 2018
- [j19]Matteo Borga
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. 88-90: 584-588 (2018) - 2017
- [j18]Isabella Rossetto, Matteo Meneghini
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. 76-77: 298-303 (2017) - [j17]Ales Chvála
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. Microelectron. Reliab. 78: 148-155 (2017) - 2016
- [j16]Gaudenzio Meneghesso, Matteo Meneghini
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016) - [j15]Isabella Rossetto, Matteo Meneghini
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64: 547-551 (2016) - 2015
- [j14]Isabella Rossetto, Matteo Meneghini
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 55(9-10): 1692-1696 (2015) - [c18]Tian-Li Wu
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS 2015: 6 - 2014
- [j13]Jie Hu, Steve Stoffels
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54(9-10): 2196-2199 (2014) - [j12]Tian-Li Wu
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. 54(9-10): 2232-2236 (2014) - [c17]Fabio Alessio Marino, Davide Bisi
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380 - 2012
- [j11]Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. Microelectron. Reliab. 52(9-10): 2188-2193 (2012) - [c16]Dirk Wellekens, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu
High temperature behaviour of GaN-on-Si high power MISHEMT devices. ESSDERC 2012: 302-305 - 2011
- [j10]Denis Marcon, Xuanwu Kang, John Viaene, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere, Robert Mertens, Gustaaf Borghs:
GaN-based HEMTs tested under high temperature storage test. Microelectron. Reliab. 51(9-11): 1717-1720 (2011) - 2010
- [c15]Wen-Chieh Wang, Zue-Der Huang, Geert Carchon, Abdelkarim Mercha, Stefaan Decoutere, Walter De Raedt
45-nm Planar bulk-CMOS 23-GHz LNAs with high-Q above-IC inductors. ISCAS 2010: 741-744 - [c14]Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken
Identifying the Bottlenecks to the RF Performance of FinFETs. VLSI Design 2010: 111-116
2000 – 2009
- 2009
- [j9]Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. 49(12): 1440-1446 (2009) - [c13]Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier
Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC 2009: 347-354 - [c12]Domagoj Siprak, Piet Wambacq, Bertrand Parvais
FinFET RF receiver building blocks operating above 10 GHz. ESSCIRC 2009: 360-363 - 2008
- [c11]Piet Wambacq, Abdelkarim Mercha, Karen Scheir, Bob Verbruggen, Jonathan Borremans, Vincent De Heyn, Steven Thijs, Dimitri Linten, Geert Van der Plas
Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies. ISSCC 2008: 528-529 - [c10]Jonathan Borremans, Piet Wambacq, Maarten Kuijk, Geert Carchon, Stefaan Decoutere:
A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS. ISSCC 2008: 536-537 - 2007
- [j8]Piet Wambacq, Bob Verbruggen, Karen Scheir, Jonathan Borremans, Morin Dehan, Dimitri Linten, Vincent De Heyn, Geert Van der Plas, Abdelkarim Mercha, Bertrand Parvais, Cedric Gustin, Vaidyanathan Subramanian, Nadine Collaert
The Potential of FinFETs for Analog and RF Circuit Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 54-I(11): 2541-2551 (2007) - [c9]Bertrand Parvais
An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs. CICC 2007: 503-506 - [c8]Bertrand Parvais
FinFET technology for analog and RF circuits. ICECS 2007: 182-185 - 2006
- [j7]Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. 46(5-6): 702-712 (2006) - [c7]Stefaan Decoutere, Piet Wambacq, Vaidy Subramanian, Jonathan Borremans, Abdelkarim Mercha:
Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges. CICC 2006: 679-686 - [c6]Geert Van der Plas
A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process. ISSCC 2006: 2310- - 2005
- [j6]Wutthinan Jeamsaksiri
RFCV Test Structure Design for a Selected Frequency Range. IEICE Trans. Electron. 88-C(5): 817-823 (2005) - [j5]Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri
A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS. IEEE J. Solid State Circuits 40(7): 1434-1442 (2005) - [j4]Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri
Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors. IEEE J. Solid State Circuits 40(9): 1922-1931 (2005) - [c5]Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles
RF ESD protection strategies - the design and performance trade-off challenges. CICC 2005: 489-496 - [c4]Dimitri Linten, Xiao Sun, Steven Thijs, M. I. Natarajan, Abdelkarim Mercha, Geert Carchon, Piet Wambacq, Takeshi Nakaie, Stefaan Decoutere:
Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors. CICC 2005: 497-500 - [c3]Olivier Dupuis, Xiao Sun, Geert Carchon, Philippe Soussan, Mattias Ferndahl, Stefaan Decoutere, Walter De Raedt
24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors. ESSCIRC 2005: 89-92 - 2004
- [c2]Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Lars Aspemyr, Andries J. Scholten, Piet Wambacq, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt:
A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor. CICC 2004: 701-704 - [c1]Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri, Javier Ramos, Abdelkarim Mercha, Snezana Jenei, Stéphane Donnay, Stefaan Decoutere:
A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS. ESSCIRC 2004: 291-294 - 2002
- [j3]Snezana Jenei, Bart K. J. C. Nauwelaers
Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors. IEEE J. Solid State Circuits 37(1): 77-80 (2002) - [j2]Jeroen A. Croon, Maarten Rosmeulen, Stefaan Decoutere, Willy Sansen, Herman E. Maes:
An easy-to-use mismatch model for the MOS transistor. IEEE J. Solid State Circuits 37(8): 1056-1064 (2002) - 2001
- [j1]M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. Microelectron. Reliab. 41(12): 1933-1938 (2001)
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last updated on 2024-10-07 22:10 CEST by the dblp team
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