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Klaus Aufinger
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2020 – today
- 2023
- [j12]Justin Romstadt
, Ahmad Zaben
A 117.5-155-GHz SiGe ×12 Frequency Multiplier Chain With Push-Push Doublers and a Gilbert Cell-Based Tripler. IEEE J. Solid State Circuits 58(9): 2430-2440 (2023) - [j11]Tim Maiwald
A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band. Proc. IEEE 111(3): 220-256 (2023) - [c21]Olga Krylova, Jan Schopfel
A High Linearity SiGe D-Band Diode Ring Mixer. BCICTS 2023: 98-101 - [c20]Justin Romstadt
A 377-416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS. BCICTS 2023: 233-236 - [c19]Melika Dedovic, Florian Vogelsang, Hakan Papurcu, Klaus Aufinger, Nils Pohl
A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth. BCICTS 2023: 237-240 - 2022
- [c18]Justin Romstadt
A SiGe D-Band x12 Frequency Multiplier with Gilbert Cell-Based Tripler. BCICTS 2022: 195-198 - [c17]Tim Maiwald, Akshay Visweswaran, Klaus Aufinger, Robert Weigel:
A Full D-band Multi-Gbit RF-DAC in 90 nm SiGe BiCMOS based on Passive Vector Aggregation. ESSCIRC 2022: 449-452 - 2021
- [c16]Justin Romstadt
Comparison on spectral purity of two SiGe D-Band frequency octuplers in MIMO radar MMICs. BCICTS 2021: 1-4 - 2020
- [c15]Lukas Polzin
A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider. BCICTS 2020: 1-4 - [c14]Katharina Kolb, Julian Potschka, Tim Maiwald, Klaus Aufinger, Amelie Hagelauer
A 28 GHz Highly Accurate Phase- and Gain-Steering Transmitter Frontend for 5G Phased-Array Applications. MWSCAS 2020: 432-435 - [c13]Julian Potschka, Julian Zuber, Katharina Kolb, Tim Maiwald, Marco Dietz, Amelie Hagelauer
A Switchable, Passively Tuneable 28 GHz to 39 GHz Upconversion Link for a 5G Repeater using a Broadside Coupler and Analog Predistortion in a 130 nm BiCMOS Technology. NEWCAS 2020: 30-33
2010 – 2019
- 2019
- [c12]Badou Sene
A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology. BCICTS 2019: 1-4 - [c11]Matthias Völkel, Mohamed Thouabtia, Sascha Breun, Klaus Aufinger, Robert Weigel, Amelie Hagelauer
A Signal Source Chip at 140GHz and 160GHz for Radar Applications in a SiGe Bipolar Technology. MWSCAS 2019: 428-431 - [c10]Marcel van Delden
A 32-48 GHz Differential YIG Oscillator With Low Phase Noise Based On a SiGe MMIC. RWS 2019: 1-3 - 2018
- [j10]Christian Bredendiek
A 61-GHz SiGe Transceiver Frontend for Energy and Data Transmission of Passive RFID Single-Chip Tags With Integrated Antennas. IEEE J. Solid State Circuits 53(9): 2441-2453 (2018) - [c9]Dirk Manger, Wolfgang Liebl, S. Boguth, B. Binder, Klaus Aufinger, C. Dahl, C. Hengst, A. Pribil, J. Oestreich, S. Rohmfeld, S. Rothenhaeusser, D. Tschumakow, Josef Boeck:
Integration of SiGe HBT with fT=305GHz, fmax=537GHz in 130nm and 90nm CMOS. BCICTS 2018: 76-79 - 2017
- [j9]C. Mukherjee
Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit. Microelectron. Reliab. 73: 146-152 (2017) - 2016
- [j8]Vincenzo d'Alessandro
Advanced thermal simulation of SiGe: C HBTs including back-end-of-line. Microelectron. Reliab. 67: 38-45 (2016) - [c8]Neelanjan Sarmah
A 200-225 GHz SiGe Power Amplifier with peak Psat of 9.6 dBm using wideband power combination. ESSCIRC 2016: 193-196 - [c7]C. Mukherjee
Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations. ESSDERC 2016: 260-263 - 2015
- [j7]Thomas Jacquet
Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit. Microelectron. Reliab. 55(9-10): 1433-1437 (2015) - 2014
- [c6]Franz Dielacher
SiGe BiCMOS technology and circuits for active safety systems. VLSI-DAT 2014: 1-4 - 2013
- [c5]Alessandro Magnani
Dynamic electrothermal macromodeling techniques for thermal-aware design of circuits and systems. PATMOS 2013: 227-230 - 2012
- [j6]Nils Pohl
A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO. IEEE J. Solid State Circuits 47(9): 1974-1980 (2012)
2000 – 2009
- 2009
- [j5]Nils Pohl
SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency. IEEE J. Solid State Circuits 44(10): 2655-2662 (2009) - [c4]Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier
Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC 2009: 347-354 - [c3]Shoujun Yang, Hans Peter Forstner, Günther Haider, Harald Kainmueller, Klaus Aufinger, Linus Maurer, Richard Hagelauer:
A low noise, high gain, highly linear mixer for 77 GHz automotive radar applications in SiGe: C bipolar technology. ESSCIRC 2009: 312-315 - 2007
- [j4]Saverio Trotta, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Bernhard Dehlink, Werner Simbürger, Arpad L. Scholtz:
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. IEEE J. Solid State Circuits 42(10): 2099-2106 (2007) - [c2]Saverio Trotta, Bernhard Dehlink, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz:
Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology. ESSCIRC 2007: 356-359 - [c1]Saverio Trotta, Herbert Knapp, Donald Dibra, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz:
A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar. ISSCC 2007: 430-613 - 2005
- [j3]Herbert Knapp, Martin Wurzer, Werner Perndl, Klaus Aufinger, Josef Böck, Thomas F. Meister:
100-Gb/s 27-1 and 54-Gb/s 211-1 PRBS generators in SiGe bipolar technology. IEEE J. Solid State Circuits 40(10): 2118-2125 (2005) - 2004
- [j2]Werner Perndl, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Werner Simbürger, Arpad L. Scholtz:
Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology. IEEE J. Solid State Circuits 39(10): 1773-1777 (2004) - 2001
- [j1]Herbert Knapp, Josef Böck, Martin Wurzer, Günter Ritzberger, Klaus Aufinger, Ludwig Treitinger:
2-GHz/2-mW and 12-GHz/30-mW dual-modulus prescalers in silicon bipolar technology. IEEE J. Solid State Circuits 36(9): 1420-1423 (2001)
Coauthor Index
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