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Shun'ichiro Ohmi
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2020 – today
- 2024
- [j47]Shun'ichiro Ohmi:
Foreword. IEICE Trans. Electron. 107(9): 231 (2024) - [j46]Shun'ichiro Ohmi:
Digital/Analog-Operation of Hf-Based FeNOS Nonvolatile Memory Utilizing Ferroelectric Nondoped HfO2 Blocking Layer. IEICE Trans. Electron. 107(9): 232-236 (2024) - 2023
- [j45]Shun'ichiro Ohmi:
Foreword. IEICE Trans. Electron. 106(10): 580 (2023) - [j44]Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi:
Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application. IEICE Trans. Electron. 106(10): 581-587 (2023) - [c9]Shun'ichiro Ohmi, Masakazu Tanuma, Joong-Won Shin:
Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition. DRC 2023: 1-2 - 2022
- [j43]Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi:
MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition. IEICE Trans. Electron. 105-C(10): 578-583 (2022) - [j42]Masakazu Tanuma, Joong-Won Shin, Shun'ichiro Ohmi:
The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation. IEICE Trans. Electron. 105-C(10): 584-588 (2022) - [j41]Eun-Ki Hong, Kyung Eun Park, Shun'ichiro Ohmi:
Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer. IEICE Trans. Electron. 105-C(10): 589-595 (2022) - [c8]Shun'ichiro Ohmi, Akio Ihara, Masakazu Tanuma, Jooyoung Pyo, Joong-Won Shin:
MFSFET with Ferroelectric HfN for Analog Memory Application. DRC 2022: 1-2 - [c7]Joong-Won Shin, Masakazu Tanuma, J. Pyo, Shun'ichiro Ohmi:
Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation. DRC 2022: 1-2 - 2021
- [c6]Shun'ichiro Ohmi, Hiroki Morita, Masaki Hayashi, Akio Ihara, Jooyoung Pyo:
Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications. DRC 2021: 1-2 - [c5]Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi:
MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator. DRC 2021: 1-2 - 2020
- [j40]Min Gee Kim, Masakazu Kataoka, Rengie Mark D. Mailig, Shun'ichiro Ohmi:
Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes. IEICE Trans. Electron. 103-C(6): 280-285 (2020) - [j39]Rengie Mark D. Mailig, Min Gee Kim, Shun'ichiro Ohmi:
The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process. IEICE Trans. Electron. 103-C(6): 286-292 (2020) - [j38]Kyung Eun Park, Shun'ichiro Ohmi:
The Influence of High-Temperature Sputtering on the N-Doped LaB6 Thin Film Formation Utilizing RF Sputtering. IEICE Trans. Electron. 103-C(6): 293-298 (2020) - [j37]Shun'ichiro Ohmi, Shin Ishimatsu, Yuske Horiuchi, Sohya Kudoh:
In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering. IEICE Trans. Electron. 103-C(6): 299-303 (2020) - [c4]Shun'ichiro Ohmi, Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig:
Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. DRC 2020: 1-2 - [c3]Kyung Eun Park, Shun'ichiro Ohmi:
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. DRC 2020: 1-2
2010 – 2019
- 2019
- [j36]Shun'ichiro Ohmi, Mizuha Hiroki, Yasutaka Maeda:
AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs. IEICE Trans. Electron. 102-C(2): 138-142 (2019) - [j35]Min Gee Kim, Shun'ichiro Ohmi:
The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100). IEICE Trans. Electron. 102-C(6): 435-440 (2019) - [j34]Binjian Zeng
, Jiajia Liao, Qiangxiang Peng, Min Liao, Yichun Zhou, Shun'ichiro Ohmi:
The Effect of Kr/O2 Sputtering on the Ferroelectric Properties of SrBi2Ta2O9 Thin Film Formation. IEICE Trans. Electron. 102-C(6): 441-446 (2019) - [j33]Rengie Mark D. Mailig, Shun'ichiro Ohmi:
Low Temperature Formation of Pd2Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process. IEICE Trans. Electron. 102-C(6): 447-452 (2019) - [j32]Shun'ichiro Ohmi, Yuya Tsukamoto, Rengie Mark D. Mailig:
Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process. IEICE Trans. Electron. 102-C(6): 453-457 (2019) - [c2]Shun'ichiro Ohmi, Yizhe Ding, Sohya Kudoh:
Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization. DRC 2019: 181-182 - 2018
- [j31]Shun'ichiro Ohmi, Yuya Tsukamoto, Weiguang Zuo, Yasushi Masahiro:
PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process. IEICE Trans. Electron. 101-C(5): 311-316 (2018) - [j30]Yasutaka Maeda, Mizuha Hiroki, Shun'ichiro Ohmi:
Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes. IEICE Trans. Electron. 101-C(5): 323-327 (2018) - [j29]Sohya Kudoh, Shun'ichiro Ohmi:
Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient. IEICE Trans. Electron. 101-C(5): 328-333 (2018) - [c1]Sohya Kudoh, Shun'ichiro Ohmi:
Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory. DRC 2018: 1-2 - 2017
- [j28]Shun'ichiro Ohmi, Mengyi Chen, Weiguang Zuo, Yasushi Masahiro:
PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures. IEICE Trans. Electron. 100-C(5): 458-462 (2017) - [j27]Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto
Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET. IEICE Trans. Electron. 100-C(5): 463-467 (2017) - 2016
- [j26]Nithi Atthi, Shun'ichiro Ohmi:
Investigation of bilayer HfNx gate insulator utilizing ECR plasma sputtering. IEICE Electron. Express 13(10): 20160054 (2016) - [j25]Sohya Kudoh, Shun'ichiro Ohmi:
A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics. IEICE Trans. Electron. 99-C(5): 504-509 (2016) - [j24]Shun'ichiro Ohmi, Mengyi Chen, Xiaopeng Wu, Yasushi Masahiro:
PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity. IEICE Trans. Electron. 99-C(5): 510-515 (2016) - [j23]Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto
High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer. IEICE Trans. Electron. 99-C(5): 535-540 (2016) - 2015
- [j22]Shun'ichiro Ohmi, Yeyuan Liu:
In-situ formation of Hf-based MONOS structures for non-volatile memory applications. IEICE Electron. Express 12(24): 20150969 (2015) - [j21]Sohya Kudoh, Shun'ichiro Ohmi:
A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics. IEICE Trans. Electron. 98-C(5): 402-405 (2015) - 2014
- [j20]Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun'ichiro Ohmi, Dong-Joo Kim
Experimental demonstration of a ferroelectric FET using paper substrate. IEICE Electron. Express 11(14): 20140447 (2014) - [j19]Shun'ichiro Ohmi:
Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system. IEICE Electron. Express 11(14): 20142006 (2014) - [j18]Dae-Hee Han, Shun'ichiro Ohmi, Tomoyuki Suwa, Philippe Gaubert, Tadahiro Ohmi:
Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering. IEICE Trans. Electron. 97-C(5): 413-418 (2014) - 2013
- [j17]Dae-Hee Han, Huiseong Han, Shun'ichiro Ohmi:
Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering. IEICE Electron. Express 10(18): 20130651 (2013) - [j16]Shun'ichiro Ohmi, Jun Arima:
Contact resistivity reduction for PtSi/Si(100) by dopant segregation process. IEICE Electron. Express 10(24): 20130778 (2013) - [j15]Dae-Hee Han, Shun'ichiro Ohmi:
Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation. IEICE Trans. Electron. 96-C(5): 669-673 (2013) - 2012
- [j14]Huiseong Han, Shun'ichiro Ohmi:
Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering. IEICE Electron. Express 9(16): 1329-1334 (2012) - [j13]Min Liao, Hiroshi Ishiwara, Shun'ichiro Ohmi:
Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors. IEICE Trans. Electron. 95-C(5): 885-890 (2012) - 2011
- [j12]Jumpei Ishikawa, Jun Gao, Shun'ichiro Ohmi:
Work function modulation of PtSi by alloying with Yb. IEICE Electron. Express 8(1): 33-37 (2011) - [j11]Jun Gao, Jumpei Ishikawa, Shun'ichiro Ohmi:
A study on precise control of PtSi work function by alloying with Hf. IEICE Electron. Express 8(1): 45-49 (2011) - [j10]Min Liao, Hiroshi Ishiwara, Shun'ichiro Ohmi:
Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator. IEICE Electron. Express 8(18): 1461-1466 (2011) - [j9]Takahiro Sano, Shun'ichiro Ohmi:
Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations. IEICE Electron. Express 8(18): 1492-1497 (2011) - [j8]Shun'ichiro Ohmi, Jun Gao:
Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor. IEICE Electron. Express 8(20): 1710-1715 (2011) - [j7]Young-Uk Song, Hiroshi Ishiwara, Shun'ichiro Ohmi:
Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer. IEICE Trans. Electron. 94-C(5): 767-770 (2011) - [j6]Jun Gao, Jumpei Ishikawa, Shun'ichiro Ohmi:
Modulation of PtSi Work Function by Alloying with Low Work Function Metal. IEICE Trans. Electron. 94-C(5): 775-779 (2011)
2000 – 2009
- 2007
- [j5]Shun'ichiro Ohmi, Tetsushi Sakai:
A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels. IEICE Trans. Electron. 90-C(5): 994-999 (2007) - 2006
- [j4]Shun'ichiro Ohmi, Tomoki Kurose, Masaki Satoh:
Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films. IEICE Trans. Electron. 89-C(5): 596-601 (2006) - 2005
- [j3]Takashi Yamazaki, Shun'ichiro Ohmi, Shinya Morita, Hiroyuki Ohri, Junichi Murota, Masao Sakuraba
Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications. IEICE Trans. Electron. 88-C(4): 656-661 (2005) - [j2]Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai:
Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation. Microelectron. J. 36(1): 41-49 (2005) - 2002
- [j1]Hiroshi Iwai, Shun'ichiro Ohmi:
Silicon integrated circuit technology from past to future. Microelectron. Reliab. 42(4-5): 465-491 (2002)
Coauthor Index
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