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DRC 2020: Columbus, OH, USA
- 2020 Device Research Conference, DRC 2020, Columbus, OH, USA, June 21-24, 2020. IEEE 2020, ISBN 978-1-7281-7047-3
- Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui
, Christian Wurm, Athith Krishna
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. 1-2 - John Stearns, Garret Moddel:
High Frequency Characteristics of Graphene Geometric Diodes. 1-2 - Chao-Yin Kuo, Shui-Jinn Wang, Po-Ting Chen, Rong-Ming Ko:
Near-Nernstian pH Sensors Based on Hydrothermally Grown NiO Nanosheets on Hierarchically Roughened Si Substrates. 1-2 - Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. 1-2 - Yuan-Chun Luo, Jae Hur
Modeling Multi-states in Ferroelectric Tunnel Junction. 1-2 - Muhammad Bilal Khan, Sayantan Ghosh, Slawomir Prucnal, Tom Mauersberger
Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing. 1-2 - Ahmad Zubair, Joshua A. Perozek
First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate. 1-2 - Ahmad Zubair, John Niroula, Nadim Chowdhury
Materials and Technology Issues for the Next Generation of Power Electronic Devices. 1-2 - Aravindh Kumar, Koosha Nassiri Nazif
Doped WS2 transistors with large on-off ratio and high on-current. 1-2 - Yi-Ping Huang, Ching-Sung Lee, Wei-Chou Hsu:
Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment. 1-2 - Jayatika Sakhuja
Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed. 1-2 - H. Aquino, D. Connelly, Alexei O. Orlov, J. Chisum, Gary H. Bernstein, Wolfgang Porod:
Using Coplanar Waveguides as Spin-Wave Sources with Improved Bandwidth. 1-2 - Asir Intisar Khan
Flexible Low-Power Superlattice-Like Phase Change Memory. 1 - Jinyoung Park, Dacheng Mao, Yaowei Xie, Zheshun Xiong
High-Density Multilayer Graphene Microelectrode Arrays for Optogenetic Electrophysiology in Human Embryonic Kidney Cells. 1-2 - Xiaohan Wu, Ruijing Ge, Deji Akinwande, Jack C. Lee:
Understanding of Multiple Resistance States by Current-sweep Measurement and Compliance Current Modulation in 2D MoS2-based Non-volatile Resistance Switching Devices. 1-2 - Niharika Thakuria, Atanu K. Saha, Sandeep Krishna Thirumala, Daniel Schulman, Saptarshi Das, Sumeet Kumar Gupta:
Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications. 1-2 - Raihan Sayeed Khan, A. B. M. Hasan Talukder, Faruk Dirisaglik, Ali Gokirmak
Stopping Resistance Drift in Phase Change Memory Cells. 1-2 - Yury Yu. Illarionov
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. 1-2 - Elliott R. Brown, Weidong Zhang, Parastou Fakhimi, Tyler A. Growden
RTD Light Emission around 1550 nm with IQE up to 6% at 300 K. 1-2 - Kyung Eun Park, Shun'ichiro Ohmi:
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. 1-2 - Mehdi Saremi, Ashish Pal, Liu Jiang, El Mehdi Bazizi, Helen Lee, Xi-Wei Lin, Blessy Alexander, Buvna Ayyagari-Sangamalli:
Modeling and Optimization of Advanced 3D NAND Memory. 1-2 - Devansh Saraswat, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing:
Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts. 1-2 - Chia-Chun Yen, An-Hung Tai, Yu-Chieh Liu, Chun-Hung Yeh, C. W. Liu:
Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers. 1-2 - Brian P. Downey, Andy Xie, Shawn Mack, D. Scott Katzer
Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design. 1-2 - Fiheon Imroze
Effect of recessed electrodes on contact resistance in Organic Thin Film Transistor based on polymer dielectric. 1-2 - Seunghyun Lee, Sri Harsha Kodati, Douglas R. Fink, Theodore J. Ronningen
Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates. 1-2 - Girish Rughoobur
Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors. 1-2 - Jeevesh Kumar, Ansh, Hemanjaneyulu Kuruva, Mayank Shrivastava:
Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight. 1-2 - Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi A. Dayeh:
Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz. 1-2 - Matthew Hartensveld, Jing Zhang:
Field Effect Light-Emitting Diode Integration for Enhanced Hole Utilization. 1-2 - Chenhao Ren, Mohamadali Malakoutian
Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature. 1-2 - Yutaro Yamaguchi, Keigo Nakatani, Koon Hoo Teo, Shintaro Shinjo:
Millimeter-Wave GaN Device Modeling for Power Amplifiers. 1-2 - Shun'ichiro Ohmi, Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig:
Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. 1-2 - Jun Tao
A Platform for Monolithic Back End of Line III-V Integration. 1-2 - Dong Ji, Burcu Ercan, Jia Zhuang, Lei Gu, Juan Rivas-Davila, Srabanti Chowdhury
Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode. 1-2 - Akanksha Rohit
Ultra-Durable and Reliable High-k Textile Capacitors for Wearables and Robotics. 1-2 - Andrew H. Jones, Stephen D. March, Seth R. Bank, Joe C. Campbell:
2-μm-Compatible AlInAsSb Avalanche Photodiodes. 1-2 - Sourav De
Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K. 1-2 - Chih-Pin Lin, Hao-Hua Hsu, Tuo-Hung Hou:
Phase and Carrier Polarity Control of Sputtered MoTe2 by Plasma-induced Defect Engineering. 1-2 - Sebastian Lukas
Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devices. 1-2 - Eldad Bahat-Treidel
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. 1-2 - Wenjian Liu
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. 1-2 - Ava J. Tan, Li-Chen Wang, Yu-Hung Liao, Jong-Ho Bae, Chenming Hu, Sayeef S. Salahuddin:
Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET. 1-2 - Karam Cho, Sandeep Krishna Thirumala, X. Liu, Niharika Thakuria, Zhihong Chen, Sumeet Kumar Gupta:
Utilizing Valley-Spin Hall Effect in WSe2 for Low Power Non-Volatile Flip-Flop Design. 1-2 - Pao-Chuan Shih
GaN Nanowire Field Emitters with a Self-Aligned Gate Process. 1-2
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