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CERN Document Server Sök i 2,049 journaler efter:  1 - 10nästaslut  gå till journal: Sökningen tog 0.24 sekunder. 
1.
Comparison Between In-flight SEL Measurement and Ground Estimation Using Different Facilities / Kerboub, N (CNES, Toulouse ; CERN ; nourdine.kerboub@cern.ch) ; Alia, R G (CERN) ; Mekki, J (CNES, Toulouse) ; Bezerra, F (CNES, Toulouse) ; Monteuuis, A (CERN) ; Fernández-Martinez, P (CERN) ; Danzeca, S (CERN) ; Brugger, M (CERN) ; Standarovski, D (CNES, Toulouse) ; Rauch, J (CNES, Toulouse)
This paper describes a comparison between in-orbit single-event effects (SEE) rate measurement acquired by the CARMEN-3 experiment on-board the JASON-3 satellite (middle earth orbit, 1336 km, 66°) and an estimation using SEE rate calculation approaches from several facilities. A SRAM memory sensitive to single-event latchup (SEL) has been monitored in orbit, and the number of events per day was estimated using monoenergetic data coming from the Kernfysisch Versneller Instituut (protons) and Université Catholique de Louvain (heavy-ions) facilities as well as using mixed-field data coming from the Cern High energy AcceleRator Mixed field (CHARM) facility. [...]
2019 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1541-1547
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1541-1547
2.
Simplified SEE sensitivity screening for COTS components in space / García Alía, Rubén (CERN) ; Brugger, Markus (CERN) ; Daly, Eamonn (ESTEC, Noordwijk) ; Danzeca, Salvatore (CERN) ; Ferlet-Cavrois, Véronique (ESTEC, Noordwijk) ; Gaillard, Rémi (Unlisted, FR) ; Mekki, Julien (CNES, Toulouse) ; Poivey, Christian (ESTEC, Noordwijk) ; Zadeh, Ali (ESTEC, Noordwijk)
We introduce an approach aimed at prescreening COTS components according to their single-event effect (SEE) sensitivity for space missions in which a complete characterization of their individual response to protons and heavy ions is not feasible due to cost and time constraints. The method is applied to a set of SRAM memories for single-event upset (SEU) and single-event latchup (SEL) and the resulting expected SEE rates are compared with traditional approaches and in-flight data for a low-earth orbit polar and a geostationary orbit. [...]
2017 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 64 (2017) 882-890 Fulltext: PDF;
3.
Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit For LEO Space Applications / Secondo, Raffaello (CERN ; IES, Montpellier) ; Alía, Ruben (CERN) ; Peronnard, Paul (CERN) ; Brugger, Markus (CERN) ; Masi, Alessandro (CERN) ; Danzeca, Salvatore (CERN) ; Merlenghi, Anne-Sophie (CERN) ; Vaillé, Jean-Roch (IES, Montpellier ; U. Nîmes, Nîmes) ; Dusseau, Laurent (IES, Montpellier)
A single event latchup (SEL) experiment based on commercial static random access memory (SRAM) memories has recently been proposed in the framework of the European Organization for Nuclear Research (CERN) Latchup Experiment and Student Satellite nanosatellite low Earth orbit (LEO) space mission. SEL characterization of three commercial SRAM memories has been carried out at the Paul Scherrer Institut (PSI) facility, using monoenergetic focused proton beams and different acquisition setups. [...]
2017 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 64 (2017) 2107 - 2114
4.
Electronics Irradiation With Neutrons at the NEAR Station of the n_TOF Spallation Source at CERN / Cecchetto, Matteo (CERN) ; Sacristan Barbero, Mario (CERN) ; Lerner, Giuseppe (CERN) ; García Alía, Rubén (CERN) ; Aguiar, Ygor (CERN) ; Senajova, Dominika (CERN) ; Garcia Infantes, Francisco (CERN) ; Pavon Rodriguez, Jose Antonio (CERN) ; Sabate Gilarte, Marta (CERN) ; Vlachoudis, Vasilis (CERN) et al.
We study the neutron field at the NEAR station of the neutron time-of-flight (n_TOF) facility at CERN, through Monte Carlo simulations, well-characterized static random access memories (SRAMs), and radio-photoluminescence (RPL) dosimeters, with the aim of providing neutrons for electronics irradiation. Particle fluxes and typical quantities relevant for electronics testing were simulated for several test positions at NEAR and compared to those at the CERN high-energy accelerator mixed-field facility (CHARM), highlighting similitudes and differences. [...]
2023 - 9 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1587-1595
5.
The CELESTA CubeSat In-Flight Radiation Measurements and Their Comparison With Ground Facilities Predictions / Coronetti, Andrea (CERN) ; Zimmaro, Alessandro (CERN) ; Alía, Rubén García (CERN) ; Danzeca, Salvatore (CERN) ; Masi, Alessandro (CERN) ; Slipukhin, Ivan (CERN) ; Amodio, Alessio (CERN) ; Dijks, Jasper (CERN) ; Peronnard, Paul (CERN) ; Secondo, Raffaello (CERN) et al.
The CELESTA CubeSat has employed radiation monitors developed by the Conseil Européen pour la Recherche Nucléaire (CERN) Centre, used for measuring the radiation environment at accelerators, to measure the space radiation field in a medium-Earth orbit (MEO). The technology is based on three static random-access memories (SRAMs) that are sensitive to single-event upsets (SEUs) and single-event latchups (SELs). [...]
2024 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1623-1630
6.
Analysis of the Radiation Field Generated by 200-MeV Electrons on a Target at the CLEAR Accelerator at CERN / Lerner, Giuseppe (CERN) ; Pelissou, Pierre (CERN ; INSA, Toulouse) ; Aguiar, Ygor Q (CERN) ; Sacristan Barbero, Mario (CERN) ; Cecchetto, Matteo (CERN) ; Biłko, Kacper (CERN) ; Coussen, Louise (CERN ; INSA, Toulouse) ; Emriskova, Natalia (CERN) ; García Alía, Rubén (CERN) ; Dyks, Luke (CERN ; Oxford U.) et al.
The radiation showers generated by the interaction of high-energy electrons with matter include neutrons with an energy distribution peaked at the MeV scale, produced via photonuclear reactions, allowing measurements of neutron-induced single-event effects (SEEs) in electronic devices. In this work, we study a setup where the 200-MeV electron beam of the CLEAR accelerator at European Organization for Nuclear Research [Centre Européen pour la Recherche Nucléaire (CERN)] is directed on an aluminum target to produce a radiation field with a large neutron component. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1572-1579
7.
SEE Tests With Ultra Energetic Xe Ion Beam in the CHARM Facility at CERN / Fernández-Martínez, Pablo (CERN) ; García Alía, Rubén (CERN) ; Cecchetto, Matteo (CERN) ; Kastriotou, Maria (CERN) ; Kerboub, Nourdine (CERN) ; Tali, Maris (CERN) ; Wyrwoll, Vanessa (CERN) ; Brugger, Markus (CERN) ; Cangialosi, Chiara (CERN) ; Cerutti, Francesco (CERN) et al.
Taking advantage of the heavy ion acceleration program, tests on radiation effects with Ultrahigh Energy (UHE) xenon ion beams (with Energy > 5 GeV/nucleon) have been performed in several experimental areas of the CERN accelerator complex. Specifically, the outcomes of the first UHE heavy ion test campaign carried out at the CHARM facility are presented and discussed in this contribution. [...]
2019 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1523-1531
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1523-1531
8.
SEE Flux and Spectral Hardness Calibration of Neutron Spallation and Mixed-Field Facilities / Cecchetto, Matteo (CERN) ; Fernández-Martínez, Pablo (CERN) ; García Alía, Rubén (CERN) ; Ferraro, Rudy (CERN) ; Danzeca, Salvatore (CERN) ; Wrobel, Frédéric (IES, Montpellier) ; Cazzaniga, Carlo (Daresbury) ; Frost, Christopher D (Daresbury)
The approach of calibrating neutron environments through well-known Single Event Upset (SEU)-based SRAM memories is applied to a neutron spallation and mixed-field facility. Implications on the Soft Error Rate (SER) induced by intermediate energy neutrons are evaluated comparing operational environments, such as ground level and accelerator shielded areas, with those reproducible by facilities. [...]
2019 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1532-1540
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1532-1540
9.
Solar Particle Event Detection With the LUMINA Optical Fiber Dosimeter Aboard the International Space Station / Roche, Martin (CNES, Toulouse ; Lab. Hubert Curien, St. Etienne) ; Balcon, Nicolas (CNES, Toulouse) ; Clément, Florence (CNES, Toulouse) ; Cheiney, Pierrick ; Morana, Adriana (Lab. Hubert Curien, St. Etienne) ; Francesca, Diego Di (CERN) ; Jean-Christophe, Malapert (CNES, Toulouse) ; Kerboub, Nourdine (CNES, Toulouse) ; Marot, Lourdes Oro ; Ricci, Daniel (CERN) et al.
LUMINA, a fiber-based dosimeter, exploiting the radiation induced attenuation (RIA) phenomenon, has been operational inside the International Space Station (ISS) since August 2021. We discuss in this article its capability to detect the possible signatures of recent solar particle events (SPEs) through the related increase of the dose rate (DR) radiation level within the ISS. [...]
2024 - 9 p. - Published in : IEEE Trans. Nucl. Sci.

In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1580-1588
10.
Mechanisms of Electron-Induced Single-Event Latchup / Tali, Maris (Jyvaskyla U.) ; Alia, Ruben García (CERN) ; Brugger, Markus (CERN) ; Ferlet-Cavrois, Véronique (ESTEC, Noordwijk) ; Corsini, Roberto (CERN) ; Farabolini, Wilfrid (CERN) ; Javanainen, Arto (Jyvaskyla U.) ; Santin, Giovanni (ESTEC, Noordwijk) ; Boatella Polo, Cesar (ESTEC, Noordwijk) ; Virtanen, Ari (Jyvaskyla U.)
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. [...]
2018 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2018) 437-443 Fulltext : PDF;

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