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CERN Document Server Sök i 2,050 journaler efter:  1 - 10nästaslut  gå till journal: Sökningen tog 0.34 sekunder. 
1.
Analysis of the Radiation Field Generated by 200-MeV Electrons on a Target at the CLEAR Accelerator at CERN / Lerner, Giuseppe (CERN) ; Pelissou, Pierre (CERN ; INSA, Toulouse) ; Aguiar, Ygor Q (CERN) ; Sacristan Barbero, Mario (CERN) ; Cecchetto, Matteo (CERN) ; Biłko, Kacper (CERN) ; Coussen, Louise (CERN ; INSA, Toulouse) ; Emriskova, Natalia (CERN) ; García Alía, Rubén (CERN) ; Dyks, Luke (CERN ; Oxford U.) et al.
The radiation showers generated by the interaction of high-energy electrons with matter include neutrons with an energy distribution peaked at the MeV scale, produced via photonuclear reactions, allowing measurements of neutron-induced single-event effects (SEEs) in electronic devices. In this work, we study a setup where the 200-MeV electron beam of the CLEAR accelerator at European Organization for Nuclear Research [Centre Européen pour la Recherche Nucléaire (CERN)] is directed on an aluminum target to produce a radiation field with a large neutron component. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1572-1579
2.
Electronics Irradiation With Neutrons at the NEAR Station of the n_TOF Spallation Source at CERN / Cecchetto, Matteo (CERN) ; Sacristan Barbero, Mario (CERN) ; Lerner, Giuseppe (CERN) ; García Alía, Rubén (CERN) ; Aguiar, Ygor (CERN) ; Senajova, Dominika (CERN) ; Garcia Infantes, Francisco (CERN) ; Pavon Rodriguez, Jose Antonio (CERN) ; Sabate Gilarte, Marta (CERN) ; Vlachoudis, Vasilis (CERN) et al.
We study the neutron field at the NEAR station of the neutron time-of-flight (n_TOF) facility at CERN, through Monte Carlo simulations, well-characterized static random access memories (SRAMs), and radio-photoluminescence (RPL) dosimeters, with the aim of providing neutrons for electronics irradiation. Particle fluxes and typical quantities relevant for electronics testing were simulated for several test positions at NEAR and compared to those at the CERN high-energy accelerator mixed-field facility (CHARM), highlighting similitudes and differences. [...]
2023 - 9 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1587-1595
3.
Analysis of the Photoneutron Field Near the THz Dump of the CLEAR Accelerator at CERN With SEU Measurements and Simulations / Lerner, Giuseppe (CERN) ; Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Kempf, Jean Mael (CERN ; ENSAE, Toulouse) ; Garcia Alia, Ruben (CERN) ; Cerutti, Francesco (CERN) ; Prelipcean, Daniel (CERN ; Munich, Tech. U.) ; Cecchetto, Matteo (CERN) ; Gilardi, Antonio (CERN ; Naples U. ; LBNL, Berkeley) ; Farabolini, Wilfrid (CERN ; Saclay) ; Corsini, Roberto (CERN)
We study the radiation environment near the terahertz (THz) dump of the CERN Linear Electron Accelerator for Research (CLEAR) electron accelerator at CERN, using FLUktuierende KAskade in German (FLUKA) simulations and single-event upset (SEU) measurements taken with 32-Mbit Integrated Silicon Solution Inc. (ISSI) static random access memories (SRAMs). [...]
2022 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 1541-1548 Fulltext: PDF;
4.
Proton Direct Ionization Upsets at Tens of MeV / Coronetti, Andrea (CERN ; IES, Montpellier) ; García Alía, Rubén (CERN) ; Lucsanyi, David (CERN) ; Wang, Jialei (Leuven U.) ; Saigné, Frédéric (IES, Montpellier) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U. (main)) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies (< 3 MeV), but also at energies $>$ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 314-321 Fulltext: PDF;
In : 2022 IEEE Nuclear and Space Radiation Effects Conference, Provo, Utah, USA, 18 - 23 Jul 2022, pp.314-321
5.
Comparison Between In-flight SEL Measurement and Ground Estimation Using Different Facilities / Kerboub, N (CNES, Toulouse ; CERN ; nourdine.kerboub@cern.ch) ; Alia, R G (CERN) ; Mekki, J (CNES, Toulouse) ; Bezerra, F (CNES, Toulouse) ; Monteuuis, A (CERN) ; Fernández-Martinez, P (CERN) ; Danzeca, S (CERN) ; Brugger, M (CERN) ; Standarovski, D (CNES, Toulouse) ; Rauch, J (CNES, Toulouse)
This paper describes a comparison between in-orbit single-event effects (SEE) rate measurement acquired by the CARMEN-3 experiment on-board the JASON-3 satellite (middle earth orbit, 1336 km, 66°) and an estimation using SEE rate calculation approaches from several facilities. A SRAM memory sensitive to single-event latchup (SEL) has been monitored in orbit, and the number of events per day was estimated using monoenergetic data coming from the Kernfysisch Versneller Instituut (protons) and Université Catholique de Louvain (heavy-ions) facilities as well as using mixed-field data coming from the Cern High energy AcceleRator Mixed field (CHARM) facility. [...]
2019 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1541-1547
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1541-1547
6.
Study of SEU Sensitivity of SRAM-Based Radiation Monitors in 65-nm CMOS / Wang, Jialei (Leuven U.) ; Prinzie, Jeffrey (Leuven U.) ; Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Thys, S (Leuven U.) ; García Alia, Rubén (CERN) ; Leroux, Paul (Leuven U.)
This article presents a static random access memory (SRAM)-based flexible radiation monitor. The monitor was fabricated in a 65-nm CMOS technology and it is designed as an application-specific integrated circuit, which comprises 768k bits SRAM cell matrix with individual power supply and a digital control core with a serial peripheral interface (SPI). [...]
2021 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 913-920
7.
Mechanisms of Electron-Induced Single-Event Latchup / Tali, Maris (Jyvaskyla U.) ; Alia, Ruben García (CERN) ; Brugger, Markus (CERN) ; Ferlet-Cavrois, Véronique (ESTEC, Noordwijk) ; Corsini, Roberto (CERN) ; Farabolini, Wilfrid (CERN) ; Javanainen, Arto (Jyvaskyla U.) ; Santin, Giovanni (ESTEC, Noordwijk) ; Boatella Polo, Cesar (ESTEC, Noordwijk) ; Virtanen, Ari (Jyvaskyla U.)
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. [...]
2018 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2018) 437-443 Fulltext : PDF;
8.
Heavy Ion Energy Deposition and SEE Intercomparison Within the RADNEXT Irradiation Facility Network / García Alía, Rubén (CERN) ; Coronetti, Andrea ; Bilko, Kacper ; Cecchetto, Matteo ; Datzmann, Gerd ; Fiore, Salvatore ; Girard, Sylvain
RADNEXT is an EU-funded network of irradiation facilities and radiation effects’ experts aimed at increasing the quantity and quality of user access to accelerator infrastructure and improving the diversity and harmonization across facilities. Along with beam provision to worldwide radiation effects’ users, RADNEXT has an ambitious research program oriented at improving radiation effects’ testing, of which an example of a heavy ion facility intercomparison at very different energy regimes is included in this work. [...]
2023 - 10 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1596-1605
9.
The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment / Coronetti, Andrea (CERN) ; García Alía, Rubén (CERN) ; Cecchetto, Matteo (CERN) ; Hajdas, Wojtek (PSI, Villigen) ; Söderström, Daniel (Jyvaskyla U.) ; Javanainen, Arto (Jyvaskyla U.) ; Saigné, Frédéric (Montpellier U.)
The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the single-event effect (SEE) cross section of modern electronic devices. This was experimentally observed for single-event upsets and single-event latchup. [...]
2020 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1606-1613 Fulltext from publisher: PDF;
10.
Thermal Neutron-Induced SEUs in the LHC Accelerator Environment / Cecchetto, Matteo (CERN) ; García Alía, Rubén (CERN) ; Wrobel, Frédéric (IES, Montpellier) ; Tali, Maris (CERN) ; Stein, Oliver (CERN) ; Lerner, Giuseppe (CERN) ; Biłko, Kacper (CERN) ; Esposito, Luigi (CERN) ; Bahamonde Castro, Cristina (CERN) ; Kadi, Yacine (CERN) et al.
In addition to high-energy hadrons, which include neutrons, protons, and pions above 20 MeV, thermal neutrons (ThNs) are a major concern in terms of soft error rate (SER) for electronics operating in the large hadron collider (LHC) accelerator at the European Organization for Nuclear Research (CERN). Most of the electronic devices still contain Boron-10 inside their structure, which makes them sensitive to ThNs. [...]
2020 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1412-1420 Fulltext from publisher: PDF;

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