Cm100dy 24h
Cm100dy 24h
Cm100dy 24h
CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
H
C2E1
C1
K
G1 E1
E2
E2 G2
S
L
R - M5 THD (3 TYP.)
P - DIA. (2 TYP.)
J
TAB#110 t=0.5
M
D
F
G2
E2
E2
C2E1
C1
E1
G1
Inches
Millimeters
Dimensions
Inches
Millimeters
3.70
94.0
0.51
13.0
3.1500.01
80.00.25
0.47
12.0
1.89
48.0
0.30
7.5
1.18 Max.
30.0 Max.
0.28
7.0
0.90
23.0
0.256 Dia.
Dia. 6.5
0.83
21.2
0.31
8.0
0.71
18.0
M5 Metric
M5
0.67
17.0
0.16
4.0
0.62
16.0
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
two IGBTs in a half-bridge configuration with each transistor having a
reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system
assembly and thermal management.
Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-24H
is a 1200V (VCES), 100 Ampere
Dual IGBT Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
100
24
Sep.1998
CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings
Symbol
CM100DY-24H
Units
Junction Temperature
Tj
40 to 150
Storage Temperature
Tstg
40 to 125
VCES
1200
Volts
VGES
20
Volts
IC
100
Amperes
ICM
200*
Amperes
IE
100
Amperes
IEM
200*
Amperes
Pc
780
Watts
1.47 ~ 1.96
Nm
1.96 ~ 2.94
Nm
270
Grams
Viso
2500
Vrms
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
IGES
VGE(th)
4.5
VCE(sat)
QG
Emitter-Collector Voltage
VEC
IE = 100A, VGE = 0V
Typ.
Max.
Units
1.0
mA
0.5
6.0
7.5
Volts
2.5
3.4**
Volts
2.25
Volts
500
nC
3.5
Volts
Test Conditions
Min.
Typ.
Max.
Units
20
nF
nF
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Cres
nF
Resistive
td(on)
250
ns
Load
Rise Time
Switching
Time
Fall Time
tr
350
ns
td(off)
300
ns
350
ns
trr
tf
IE = 100A, diE/dt = 200A/s
250
ns
Qrr
0.74
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)
Per IGBT
0.16
C/W
Rth(j-c)
Per FWDi
0.35
C/W
Rth(c-f)
0.065
C/W
Sep.1998
CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
200
160
15
12
VGE = 20V
11
120
10
80
40
7
VCE = 10V
Tj = 25C
Tj = 125C
160
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
120
80
40
0
0
10
0
0
12
16
20
40
80
120
160
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
7
5
IC = 200A
IC = 100A
2
IC = 40A
3
2
102
7
5
3
2
12
16
1.0
20
1.5
2.0
2.5
3.0
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
103
REVERSE RECOVERY TIME, t rr, (ns)
td(on)
VCC = 600V
VGE = 15V
RG = 3.1
Tj = 125C
101
100
102
102
101
di/dt = -200A/sec
Tj = 25C
tr
101
Irr
101
100
101
EMITTER CURRENT, IE, (AMPERES)
100
101
102
102
t rr
Cres
tf
td(off)
10-1
10-1
3.5
102
Coes
100
VGE = 0V
Cies
101
101
200
102
Tj = 25C
100
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
Tj = 25C
10
VGE = 15V
Tj = 25C
Tj = 125C
200
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
IC = 100A
16
VCC = 400V
VCC = 600V
12
0
0
200
400
600
800
Sep.1998
CM100DY-24H
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
10-2
10-1
100
101
100
101
Single Pulse
TC = 25C
Per Unit Base = R th(j-c) = 0.16C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
10-2
10-1
100
101
100
101
Single Pulse
TC = 25C
Per Unit Base = R th(j-c) = 0.35C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Sep.1998