VBsemi Elec 2SJ601 Z - C879138
VBsemi Elec 2SJ601 Z - C879138
VBsemi Elec 2SJ601 Z - C879138
www.VBsemi.tw
FEATURES
PRODUCT SUMMARY • TrenchFET® Power MOSFET
VDS (V) RDS(on) () ID (A) • Material categorization:
0.020 at VGS = - 10 V - 50
- 60
0.025 at VGS = - 4.5 V - 45
APPLICATIONS
• Load Switch
TO-252
S
G D S
D
Top View
P-Channel MOSFET
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2SJ601-Z
www.VBsemi.tw
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2SJ601-Z
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80 80
VGS = 10 thru 4 V
70 70
60 60
I D - Drain Current (A)
40 40
30 30
3V TC = 125 ° C
20 20
25 ° C
10 10
- 55 °C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100 0.060
TC = - 55 °C 25 °C
80 0.050
R DS(on) - On-Resistance (Ω)
125 °C
g fs - Transconductance (S)
60 0.040
VGS = 4.5 V
40 0.030
VGS = 10 V
20 0.020
0 0.000
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80
4000 10
3500
VDS = 30 V
VGS - Gate-to-Source Voltage (V)
8 ID = 40 A
3000
C - Capacitance (pF)
Ciss
2500
6
2000
4
1500
1000
2
500 Coss
Crss
0 0
0 10 20 30 40 50 60 0 20 40 60 80 100 120
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2SJ601-Z
www.VBsemi.tw
TYPICAL CHARACTERISTICS
2.0 100
VGS = 10 V
ID = 17 A
R DS(on) - On-Resistance (Normalized)
1.8
TJ = 150 °C
1.4 TJ = 25 °C
10
1.2
1.0
0.8
0.6 1
- 50 - 25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS (25 °C, unless otherwise noted)
50 100
Limited by R DS(on)*
40
P(t) = 0.0001
I D - Drain Current (A)
30 10
BVDSS
20 Limited
10 P(t) = 0.001
5 P(t) = 0.01
TC = 25 °C
Single Pulse P(t) = 0.1
P(t) = 1
0 1
0 25 50 75 100 125 150 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
TC - Case Temperature (°C)
* VGS > minimum VGS at which RDS(on) is specified
Drain Current vs. Case Temperature Safe Operating Area
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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2SJ601-Z
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E A MILLIMETERS INCHES
C2
b3
DIM. MIN. MAX. MIN. MAX.
L3 A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
D
H
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
L4
L
gage plane height (0.5 mm)
D1 5.21 - 0.205 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
b b2 C
e H 9.40 10.41 0.370 0.410
A1
e1 e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
D1
L4 - 1.02 - 0.040
L5 1.14 1.52 0.045 0.060
ECN: X12-0247-Rev. M, 24-Dec-12
E1 DWG: 5347
Note
• Dimension L3 is for reference only.
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2SJ601-Z
www.VBsemi.tw
0.224
(5.690)
(6.180)
0.243
(10.668)
0.420
(2.202)
0.087
(2.286)
0.090
0.180 0.055
(4.572) (1.397)
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2SJ601-Z
www.VBsemi.tw
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