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Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,


use http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use


salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,

Kind regards,

Team Nexperia
PDTC123J series
NPN resistor-equipped transistors;
R1 = 2.2 k, R2 = 47 k
Rev. 7 — 21 December 2011 Product data sheet

1. Product profile

1.1 General description


NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.

Table 1. Product overview


Type number Package PNP Package
NXP JEITA JEDEC complement configuration

PDTC123JE SOT416 SC-75 - PDTA123JE ultra small


PDTC123JM SOT883 SC-101 - PDTA123JM leadless ultra small
PDTC123JT SOT23 - TO-236AB PDTA123JT small
PDTC123JU SOT323 SC-70 - PDTA123JU very small

1.2 Features and benefits


 100 mA output current capability  Reduces component count
 Built-in bias resistors  Reduces pick and place costs
 Simplifies circuit design  AEC-Q101 qualified

1.3 Applications
 Digital application in automotive and  Cost-saving alternative for BC847/857
industrial segments series in digital applications
 Control of IC inputs  Switching loads

1.4 Quick reference data


Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IO output current - - 100 mA
R1 bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT23; SOT323; SOT416
1 input (base)
3 3
2 GND (emitter)
R1
3 output (collector) 1

R2

1 2 2
006aaa144
sym007

SOT883
1 input (base)
1 3
2 GND (emitter) 3 R1
3 output (collector) 2 1
Transparent
R2
top view
2
sym007

3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PDTC123JE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTC123JM SC-101 leadless ultra small plastic package; 3 solder lands; SOT883
body 1.0  0.6  0.5 mm
PDTC123JT - plastic surface-mounted package; 3 leads SOT23
PDTC123JU SC-70 plastic surface-mounted package; 3 leads SOT323

4. Marking
Table 5. Marking codes
Type number Marking code[1]
PDTC123JE 28
PDTC123JM DW
PDTC123JT *25
PDTC123JU *49

[1] * = placeholder for manufacturing site code.

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 2 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +12 V
negative - 5 V
IO output current - 100 mA
ICM peak collector current single pulse; tp  1 ms - 100 mA
Ptot total power dissipation Tamb  25 C
PDTC123JE (SOT416) [1][2] - 150 mW
PDTC123JM (SOT883) [2][3] - 250 mW
PDTC123JT (SOT23) [1] - 250 mW
PDTC123JU (SOT323) [1] - 200 mW
Tj junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 3 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

006aac778
300

(1)
Ptot
(mW)

(2)
200

(3)

100

0
-75 -25 25 75 125 175
Tamb (°C)

(1) SOT23; FR4 PCB, standard footprint


SOT883; FR4 PCB with 70 m copper strip line, standard footprint
(2) SOT323; FR4 PCB, standard footprint
(3) SOT416; FR4 PCB, standard footprint
Fig 1. Power derating curves

6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction in free air
to ambient
PDTC123JE (SOT416) [1][2] - - 830 K/W
PDTC123JM (SOT883) [2][3] - - 500 K/W
PDTC123JT (SOT23) [1] - - 500 K/W
PDTC123JU (SOT323) [1] - - 625 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 4 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

006aac781
103
duty cycle = 1
Zth(j-a) 0.75
(K/W) 0.5
0.33
0.2
102
0.1
0.05

0.02
0.01
10

1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, standard footprint


Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC123JE (SOT416); typical values

006aac782
103

Zth(j-a) duty cycle = 1


(K/W)
0.75
0.5
102 0.33
0.2

0.1
0.05

10 0.02
0.01

1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, 70 m copper strip line


Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC123JM (SOT883); typical values

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 5 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

006aac779
103
duty cycle = 1
Zth(j-a) 0.75
(K/W) 0.5
0.33
102 0.2

0.1
0.05

0.02 0.01
10

1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, standard footprint


Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC123JT (SOT23); typical values

006aac780
103
duty cycle = 1
Zth(j-a) 0.75
(K/W) 0.5
0.33
102 0.2

0.1
0.05

0.02
0.01
10

1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, standard footprint


Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC123JU (SOT323); typical values

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 6 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base VCB = 50 V; IE = 0 A - - 100 nA
cut-off current
ICEO collector-emitter VCE = 30 V; IB = 0 A - - 1 A
cut-off current VCE = 30 V; IB = 0 A; - - 5 A
Tj = 150 C
IEBO emitter-base VEB = 5 V; IC = 0 A - - 180 A
cut-off current
hFE DC current gain VCE = 5 V; IC = 10 mA 100 - -
VCEsat collector-emitter IC = 5 mA; IB = 0.25 mA - - 100 mV
saturation voltage
VI(off) off-state input VCE = 5 V; IC = 100 A - 0.6 0.5 V
voltage
VI(on) on-state input VCE = 0.3 V; IC = 5 mA 1.1 0.75 - V
voltage
R1 bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
Cc collector capacitance VCB = 10 V; IE = ie = 0 A; - - 2.5 pF
f = 1 MHz
fT transition frequency VCE = 5 V; IC = 10 mA; [1] - 230 - MHz
f = 100 MHz

[1] Characteristics of built-in transistor.

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 7 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

006aac805 006aac810
103 1

hFE (1)
(2)
VCEsat
(3) (V)
102

10-1
(1)
(2)

10
(3)

1 10-2
10-1 1 10 102 10-1 1 10 102
IC (mA) IC (mA)

VCE = 5 V IC/IB = 20
(1) Tamb = 100 C (1) Tamb = 100 C
(2) Tamb = 25 C (2) Tamb = 25 C
(3) Tamb = 40 C (3) Tamb = 40 C
Fig 6. DC current gain as a function of collector Fig 7. Collector-emitter saturation voltage as a
current; typical values function of collector current; typical values

006aac811 006aac812
10 1
(1)

(2)
VI(on) VI(off)
(V) (V)
(3)

1 (1)

(2)

(3)

10-1 10-1
10-1 1 10 102 10-1 1 10
IC (mA) IC (mA)

VCE = 0.3 V VCE = 5 V


(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = 25 C (2) Tamb = 25 C
(3) Tamb = 100 C (3) Tamb = 100 C
Fig 8. On-state input voltage as a function of Fig 9. Off-state input voltage as a function of
collector current; typical values collector current; typical values

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 8 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

006aac813 006aac757
3 103

Cc
(pF)
fT
(MHz)
2

102

0 10
0 10 20 30 40 50 10-1 1 10 102
VCB (V) IC (mA)

f = 1 MHz; Tamb = 25 C VCE = 5 V; Tamb = 25 C


Fig 10. Collector capacitance as a function of Fig 11. Transition frequency as a function of collector
collector-base voltage; typical values current; typical values of built-in transistor

8. Test information

8.1 Quality information


This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 9 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

9. Package outline

1.8 0.95 0.62


1.4 0.60 0.55
0.55 0.50
0.47 0.46
3 0.45
0.15
0.30 3
0.22

1.75 0.9
1.45 0.7 0.65 1.02
0.95

0.30
0.22 2 1
1 2
0.30 0.25
0.15 0.10 0.20
1 0.12
0.35
Dimensions in mm 04-11-04 Dimensions in mm 03-04-03

Fig 12. Package outline PDTC123JE (SOT416/SC-75) Fig 13. Package outline PDTC123JM (SOT883/SC-101)

3.0 1.1 2.2 1.1


2.8 0.9 1.8 0.8

3 3 0.45
0.15
0.45
0.15
2.5 1.4 2.2 1.35
2.1 1.2 2.0 1.15

1 2 1 2
0.48 0.15 0.4 0.25
0.38 0.09 0.3 0.10
1.9 1.3

Dimensions in mm 04-11-04 Dimensions in mm 04-11-04

Fig 14. Package outline PDTC123JT (SOT23) Fig 15. Package outline PDTC123JU (SOT323/SC-70)

10. Packing information


Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
PDTC123JE SOT416 4 mm pitch, 8 mm tape and reel -115 -135
PDTC123JM SOT883 2 mm pitch, 8 mm tape and reel - -315
PDTC123JT SOT23 4 mm pitch, 8 mm tape and reel -215 -235
PDTC123JU SOT323 4 mm pitch, 8 mm tape and reel -115 -135

[1] For further information and the availability of packing methods, see Section 14.

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 10 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

11. Soldering

2.2

1.7

solder lands

solder resist
0.85 1 2
solder paste
0.5
(3×) occupied area

Dimensions in mm
0.6
(3×)
1.3 sot416_fr

Reflow soldering is the only recommended soldering method.


Fig 16. Reflow soldering footprint PDTC123JE (SOT416/SC-75)

1.3

0.7 R0.05 (12×)

solder lands

solder resist
0.9 0.6 0.7

0.25 solder paste


(2×)
occupied area

0.3
0.3 Dimensions in mm
(2×)
0.4
0.4
(2×)
sot883_fr

Reflow soldering is the only recommended soldering method.


Fig 17. Reflow soldering footprint PDTC123JM (SOT883/SC-101)

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 11 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

3.3

2.9

1.9

solder lands

solder resist
3 1.7 2

solder paste

0.7 0.6 occupied area


(3×) (3×)
Dimensions in mm

0.5
(3×)
0.6
(3×)

1 sot023_fr

Fig 18. Reflow soldering footprint PDTC123JT (SOT23)

2.2
1.2
(2×)

1.4
(2×)

solder lands

4.6 2.6 solder resist

occupied area

Dimensions in mm
1.4

preferred transport direction during soldering

2.8

4.5 sot023_fw

Fig 19. Wave soldering footprint PDTC123JT (SOT23)

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 12 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

2.65

1.85

1.325
solder lands

2 solder resist

0.6 3 solder paste


2.35 1.3
(3×)

0.5 occupied area


1
(3×)
Dimensions in mm

0.55
(3×) sot323_fr

Fig 20. Reflow soldering footprint PDTC123JU (SOT323/SC-70)

4.6

2.575
1.425
(3×)
solder lands

solder resist

occupied area

3.65 2.1 1.8 Dimensions in mm

09 preferred transport
(2×) direction during soldering

sot323_fw

Fig 21. Wave soldering footprint PDTC123JU (SOT323/SC-70)

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 13 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

12. Revision history


Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTC123J_SER v.7 20111221 Product data sheet - PDTC123J_SER v.6
Modifications: • Figure 3 and 5: corrected
PDTC123J_SER v.6 20111215 Product data sheet - PDTC123J_SERIES v.5
PDTC123J_SERIES v.5 20040813 Product data sheet - PDTC123J_SERIES v.4
PDTC123J_SERIES v.4 20030410 Product specification - -

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 14 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

13. Legal information

13.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Draft — The document is a draft version only. The content is still under
malfunction of an NXP Semiconductors product can reasonably be expected
internal review and subject to formal approval, which may result in
to result in personal injury, death or severe property or environmental
modifications or additions. NXP Semiconductors does not give any
damage. NXP Semiconductors and its suppliers accept no liability for
representations or warranties as to the accuracy or completeness of
inclusion and/or use of NXP Semiconductors products in such equipment or
information included herein and shall have no liability for the consequences of
applications and therefore such inclusion and/or use is at the customer’s own
use of such information.
risk.
Short data sheet — A short data sheet is an extract from a full data sheet
Applications — Applications that are described herein for any of these
with the same product type number(s) and title. A short data sheet is intended
products are for illustrative purposes only. NXP Semiconductors makes no
for quick reference only and should not be relied upon to contain detailed and
representation or warranty that such applications will be suitable for the
full information. For detailed and full information see the relevant full data
specified use without further testing or modification.
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the Customers are responsible for the design and operation of their applications
full data sheet shall prevail. and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
Product specification — The information and data provided in a Product design. It is customer’s sole responsibility to determine whether the NXP
data sheet shall define the specification of the product as agreed between Semiconductors product is suitable and fit for the customer’s applications and
NXP Semiconductors and its customer, unless NXP Semiconductors and products planned, as well as for the planned application and use of
customer have explicitly agreed otherwise in writing. In no event however, customer’s third party customer(s). Customers should provide appropriate
shall an agreement be valid in which the NXP Semiconductors product is design and operating safeguards to minimize the risks associated with their
deemed to offer functions and qualities beyond those described in the applications and products.
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
13.3 Disclaimers customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Limited warranty and liability — Information in this document is believed to
Semiconductors products in order to avoid a default of the applications and
be accurate and reliable. However, NXP Semiconductors does not give any
the products or of the application or use by customer’s third party
representations or warranties, expressed or implied, as to the accuracy or
customer(s). NXP does not accept any liability in this respect.
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no Limiting values — Stress above one or more limiting values (as defined in
responsibility for the content in this document if provided by an information the Absolute Maximum Ratings System of IEC 60134) will cause permanent
source outside of NXP Semiconductors. damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
In no event shall NXP Semiconductors be liable for any indirect, incidental,
the Recommended operating conditions section (if present) or the
punitive, special or consequential damages (including - without limitation - lost
Characteristics sections of this document is not warranted. Constant or
profits, lost savings, business interruption, costs related to the removal or
repeated exposure to limiting values will permanently and irreversibly affect
replacement of any products or rework charges) whether or not such
the quality and reliability of the device.
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory. Terms and conditions of commercial sale — NXP Semiconductors
Notwithstanding any damages that customer might incur for any reason products are sold subject to the general terms and conditions of commercial
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards sale, as published at http://www.nxp.com/profile/terms, unless otherwise
customer for the products described herein shall be limited in accordance agreed in a valid written individual agreement. In case an individual
with the Terms and conditions of commercial sale of NXP Semiconductors. agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
Right to make changes — NXP Semiconductors reserves the right to make applying the customer’s general terms and conditions with regard to the
changes to information published in this document, including without purchase of NXP Semiconductors products by customer.
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior No offer to sell or license — Nothing in this document may be interpreted or
to the publication hereof. construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 15 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Export control — This document as well as the item(s) described herein


may be subject to export control regulations. Export might require a prior
13.4 Trademarks
authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks
Quick reference data — The Quick reference data is an extract of the are the property of their respective owners.
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

14. Contact information


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

PDTC123J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 7 — 21 December 2011 16 of 17


NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Contact information. . . . . . . . . . . . . . . . . . . . . 16
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2011. All rights reserved.


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 December 2011
Document identifier: PDTC123J_SER

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