VS-T20HF220

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Vishay Semiconductors
Power Rectifier Diodes (T-Modules), 2200 V, 20 A
FEATURES
• Electrically isolated base plate
• 2200 VRRM
• Industrial standard packaging
• UL approved file E78996
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• Designed and qualified for industrial level
D-55 (T-module)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS
DESCRIPTION / APPLICATIONS
IF(AV) 20 A
Type Modules - diode, high voltage These series of D-55 (T-modules) use standard recovery
power rectifier diodes. The semiconductors are electrically
VRRM 2200 V
isolated from the metal base, allowing common heatsink
Package D-55 (T-module)
and compact assembly to be built.
Circuit configuration Single diode Applications include power supplies, battery charges,
welders, motor controls, and solar panel application.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS
20 A
IF(AV)
TC 85 °C
IF(RMS) 31
50 Hz 450 A
IFSM
60 Hz 470
50 Hz 1015
I2t A2s
60 Hz 920
I2t 10 125 A2s
VRRM 2200 V
TJ -40 to +150 °C

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM VRSM, MAXIMUM
IRRM MAXIMUM
TYPE VOLTAGE REPETITIVE PEAK NON-REPETITIVE PEAK
AT TJ = 150 °C
NUMBER CODE REVERSE VOLTAGE REVERSE VOLTAGE
mA
V V
VS-T20HF220 22 2200 2250 18

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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current at case 20 A
IF(AV) 180° conduction, half sine wave
temperature 85 °C
Maximum RMS forward current IF(RMS) 31 A
t = 10 ms No voltage 450
Maximum peak, one-cycle forward, t = 8.3 ms reapplied 470
IFSM A
non-repetitive surge current t = 10 ms 100 % VRRM 380
reapplied Sinusoidal half
t = 8.3 ms 400
wave, initial 
t = 10 ms No voltage 1015
TJ = TJ maximum
t = 8.3 ms reapplied 920
Maximum I2t for fusing I2t A2s
t = 10 ms 100 % VRRM 715
t = 8.3 ms reapplied 650
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 10 125 A2s
(16.7 % x  x IF(AV) < I <  x IF(AV)),
Low level value of threshold voltage VF(TO)1 0.77
TJ maximum V
High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ maximum 0.89
(16.7 % x  x IF(AV) < I <  x IF(AV)),
Low level value of forward slope resistance rf1 8.5
TJ maximum m
High level value of forward slope resistance rf2 (I >  x IF(AV)), TJ maximum 6.7
IFM = 60 A, TJ = 25 °C, tp = 400 μs square pulse
Maximum forward voltage drop VFM 1.50 V
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse
IRRM TJ = 150 °C 18 mA
leakage current
50 Hz, circuit to base, all terminals shorted
RMS isolation voltage VISOL 3500 V
TJ = 25 °C, t = 1 s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage
TJ, TStg -40 to +150 °C
temperature range
Maximum thermal resistance, junction to case
RthJC DC operation 2.53
per junction K/W
Maximum thermal resistance, case to heatsink RthCS Mounting surface smooth, flat and greased 0.2
to heatsink Non-lubricated M3.5 mounting screws (1) 1.3 ± 10 %
Mounting torque, ± 10 % Nm
terminals threads M5 screw terminals 3 ± 10 %
Approximate weight See dimensions - link at the end of datasheet 54 g
Case style D-55 (T-module)
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound

R CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
DEVICES UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
T20HF... 0.29 0.34 0.43 0.64 1.10 0.20 0.35 0.47 0.67 1.11 K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Revision: 05-Jan-18 2 Document Number: 94709

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-T20HF220
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Maximum Allowable Case Temperature (°C)

160 100

Maximum Forward Power Loss (W)

30°
150 90 60° 120°
90° DC
140 80 180°
130 70
120
60
110
50
100
40
90
30° 30
80 60°
RMS limit
70 90° 20
120°
60 10
180°
50 0
0 10 20 30 0 10 20 30 40 50 60 70 80

IF(AV) - Average Forward Current (A) Anode Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case Temperature (°C)

160 500

Peak Half Sine Wave Forward Current (A)

150 450
140 90° at 60 Hz 0.0083 s
400 at 50 Hz 0.0100 s
130
350
120
110 300

100 250
90
200
80 30° 60°
120° DC 150
70 180°
60 100
0 10 20 30 1 10 100
Number Of Equal Amplitude Half Cycle
IF(AV) - Average Forward Current (A)
Current Pulses (N)
Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)

75 620
30° 60° 90° 180°
Maximum Forward Power Loss

120° 520
No Voltage Reapplied
Rated VRRM Reapplied
420
Characteristics

50

320
RMS limit

25 220

120

0 20
0 10 20 30 40 50 60 0.01 0.1 1

Anode Forward Current (A) Pulse Train Duration (s)

Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current

Revision: 05-Jan-18 3 Document Number: 94709

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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IF - Instantaneous Forward Current (A)

1000 100

IR - Reverse Current (mA)

10 TJ = 150 °C

100
1

TJ = 150 °C
TJ = 25 °C 0.1
10

0.01 TJ = 25 °C

1 0.001
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 500 1000 1500 2000 2500

VF - Forward Voltage Drop (V) VR - Reverse Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Typical Values of Reverse Current vs. Reverse Voltage

10
ZthJC - Thermal Impedance
Junction to Case (°C/W)

0.1

0.01
0.0001 0.001 0.01 0.1 1 10 100

t1 - Rectangular Pulse Duration (s)

Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Device code VS- T 20 HF 220

1 2 3 4 5

1 - Vishay Semiconductors product

2 - Module type
3 - Current rating
4 - Circuit configuration (see Circuit Configuration table)
5 - Voltage code x 10 = VRRM

CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING

Single diode HF 2 1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95313

Revision: 05-Jan-18 4 Document Number: 94709

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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 Outline Dimensions
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Vishay Semiconductors
D-55 T-Module Diode Standard and Fast Recovery
DIMENSIONS in millimeters (inches)

26 ± 1 23.5 ± 0.5
3 ± 0.5 (1.02 ± 0.04) (0.93 ± 0.02)
(0.12 ± 0.02)

41 (1.61) max.

11 18
(0.43) (0.71)

3.9 ± 0.05
(0.15 ± 0.002)
2

27 ± 0.3 8 ± 0.3
15 (0.59)
(1.06 ± 0.01) (0.31 ± 0.01)

M5

30 (1.18)

Note
• 1 = Anode
2 = Cathode

Revision: 21-Apr-17 1 Document Number: 95313

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