20ETF..

S Soft Recovery Series

Vishay High Power Products

Surface Mountable Fast

Soft Recovery Rectifier Diode, 20 A
FEATURES/DESCRIPTION
Base The 20ETF..S soft recovery rectifier series has been
common optimized for combined short reverse recovery time and low
cathode
+ forward voltage drop.
2

The glass passivation ensures stable reliable operation in

the most severe temperature and power cycling conditions.

1 3
D2PAK (SMD-220) Anode - - Anode This product series has been designed and qualified for
industrial level.

APPLICATIONS
PRODUCT SUMMARY
VF at 10 A < 1.2 V
• Output rectification and freewheeling in inverters,
choppers and converters
IFSM 300 A
VRRM 200 to 600 V • Input rectifications where severe restrictions on conducted
EMI should be met

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 20 A
VRRM 200 to 600 V
IFSM 300 A
VF 10 A, TJ = 25 °C 1.2 V
trr 1 A, 100 A/µs 60 ns
TJ Range - 40 to 150 °C

VOLTAGE RATINGS
VRRM, MAXIMUM PEAK VRSM, MAXIMUM NON-REPETITIVE IRRM
PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 °C
V V mA
20ETF02S 200 300
20ETF04S 400 500 5
20ETF06S 600 700

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 97 °C, 180° conduction half sine wave 20
Maximum peak one cycle 10 ms sine pulse, rated VRRM applied 250 A
IFSM
non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated VRRM applied 316
Maximum I2t for fusing I2t A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s

Document Number: 93143 For technical questions, contact: diodes-tech@vishay.com www.vishay.com

Revision: 22-Oct-08 1
20ETF..S Soft Recovery Series
Vishay High Power Products Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A

ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A, TJ = 25 °C 1.30
Maximum forward voltage drop VFM V
60 A, TJ = 25 °C 1.67
Forward slope resistance rt 12.5 mΩ
Threshold voltage VF(TO) TJ = 150 °C 0.9 V
TJ = 25 °C 0.1
Maximum reverse leakage current IRM VR = Rated VRRM mA
TJ = 150 °C 5.0

RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr 160 ns IFM
IF at 20 Apk trr
Reverse recovery current Irr 100 A/µs 10 A ta tb
t
25 °C dir
Reverse recovery charge Qrr 1.25 µC dt Qrr
Snap factor S Typical 0.6 IRM(REC)

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
TJ, TStg - 40 to 150 °C
temperature range
Maximum thermal resistance,
RthJC DC operation 0.9
junction to case
°C/W
Maximum thermal resistance
RthJA (1) 40
junction to ambient (PCB mount)
Soldering temperature TS 240 °C
2 g
Approximate weight
0.07 oz.
20ETF02S
Marking device Case style D2PAK (SMD-220) 20ETF04S
20ETF06S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93143

2 Revision: 22-Oct-08
 20ETF..S Soft Recovery Series
Surface Mountable Fast Vishay High Power Products
Soft Recovery Rectifier Diode, 20 A

150 45
20ETF.. Series DC
140 RthJC (DC) = 0.9 K/W 40

Maximum Average Forward

180°
Maximum Allowable Case

120°
35
130 90°
Temperature (°C)

Power Loss (W)

Ø 30 60°
120 Conduction angle 30°
25
110
20 RMS limit
100 Ø
15
Conduction period
90
10
30° 60° 90° 120° 180°
80 5 20ETF.. Series
TJ = 150 °C
70 0
0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 35

Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics

300
150 At any rated load condition and with
20ETF.. Series
rated VRRM applied following surge.
RthJC (DC) = 0.9 K/W
140
Maximum Allowable Case

250 Initial TJ = 150 °C

Forward Current (A)

Peak Half Sine Wave at 60 Hz 0.0083 s
Temperature (°C)

130 at 50 Hz 0.0100 s
Ø
Conduction period 200
120

110 30° 150

60°
100
90° 100
90 120° 20ETF.. Series
180° DC
50
80
1 10 100
0 5 10 15 20 25 30 35
Number of Equal Amplitude Half Cycle
Average Forward Current (A)
Current Pulses (N)
Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current

35 550
180° Maximum non-repetitive surge current
120° 500 versus pulse train duration.
Maximum Average Forward

30
90° 450 Initial TJ = 150 °C
Forward Current (A)
Peak Half Sine Wave

60° No voltage reapplied

25
Power Loss (W)

30° 400
Rated VRRM reapplied
350
20
RMS limit 300
15
250
Ø
10 Conduction angle 200
150
5 20ETF.. Series
100 20ETF.. Series
TJ = 150 °C
0 50
0 5 10 15 20 25 0.001 0.01 0.1 1

Average Forward Current (A) Pulse Train Duration (s)

Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 93143 For technical questions, contact: diodes-tech@vishay.com www.vishay.com

Revision: 22-Oct-08 3
20ETF..S Soft Recovery Series
Vishay High Power Products Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A

1000 4.0
Instantaneous Forward Current (A)

20ETF.. Series IFM = 30 A

3.5 TJ = 25 °C

Qrr - Maximum Reverse

Recovery Charge (µC)
3.0
IFM = 20 A
100
2.5

2.0
IFM = 10 A
1.5
10 TJ = 25 °C
TJ = 150 °C 1.0
IFM = 5 A
0.5
20ETF.. Series IFM = 1 A
1 0
0 1 2 3 4 5 0 200 400 600 800 1000

Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C

0.20 10
20ETF.. Series 20ETF.. Series
9
TJ = 25 °C TJ = 150 °C
Qrr - Maximum Reverse 8 IFM = 30 A
Recovery Charge (µC)
trr - Maximum Reverse
Recovery Time (µs)

0.15 IFM = 30 A
7
6 IFM = 20 A
IFM = 20 A
0.10 5

IFM = 10 A 4 IFM = 10 A
3
0.05 IFM = 5 A
2 IFM = 5 A
1 IFM = 1 A
IFM = 1 A
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C

0.5 70
20ETF.. Series 20ETF.. Series
TJ = 150 °C 60 TJ = 25 °C IFM = 30 A
0.4
trr - Maximum Reverse

Irr - Maximum Reverse

Recovery Current (A)
Recovery Time (µs)

IFM = 30 A 50 IFM = 20 A
IFM = 20 A
0.3
IFM = 10 A 40
IFM = 5 A IFM = 10 A
IFM = 1 A 30
0.2
IFM = 5 A
20
0.1
10
IFM = 1 A
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C

www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93143

4 Revision: 22-Oct-08
 20ETF..S Soft Recovery Series
Surface Mountable Fast Vishay High Power Products
Soft Recovery Rectifier Diode, 20 A

100
20ETF.. Series
TJ = 150 °C
80 IFM = 30 A

Irr - Maximum Reverse

Recovery Current (A)
IFM = 20 A
60
IFM = 10 A

40 IFM = 5 A

20 IFM = 1 A

0
0 200 400 600 800 1000

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (K/W)

10
Steady state value
(DC operation)

D = 0.50
D = 0.33
0.1 Single pulse D = 0.25
D = 0.17
D = 0.08
20ETF.. Series

0.01
0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

Fig. 14 - Thermal Impedance ZthJC Characteristics

Document Number: 93143 For technical questions, contact: diodes-tech@vishay.com www.vishay.com

Revision: 22-Oct-08 5
20ETF..S Soft Recovery Series
Vishay High Power Products Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A

ORDERING INFORMATION TABLE

Device code 20 E T F 06 S TRL -

1 2 3 4 5 6 7 8

1 - Current rating (20 = 20 A)

2 - Circuit configuration:
E = Single diode
3 - Package:
T = D2PAK (TO-220AC)
4 - Type of silicon:
F = Fast soft recovery rectifier 02 = 200 V
5 - Voltage code x 100 = VRRM 04 = 400 V
06 = 600 V
6 - S = Surface mountable
7 - None = Tube
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
8 - None = Standard production
PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032

www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93143

6 Revision: 22-Oct-08
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All product specifications and data are subject to change without notice.

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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1
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