R1112N Series: Low Noise 150ma Ldo Regulator
R1112N Series: Low Noise 150ma Ldo Regulator
R1112N Series: Low Noise 150ma Ldo Regulator
OUTLINE
The R1112N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1112N Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5 (Mini-mold) package , high density mounting of the ICs on boards is possible.
FEATURES
Ultra-Low Supply Current................................................ Typ. 100A Standby Mode Current .................................................. Typ. 0.1A Low Dropout Voltage....................................................... Typ. 0.19V (IOUT=100mA 3.0V Output type) High Ripple Rejection ..................................................... Typ. 80dB(f=1kHz) Low Temperature-Drift Coefficient of Output Voltage...... Typ. 100ppm/C Excellent Line Regulation ............................................... Typ. 0.05%/V High Output Voltage Accuracy ........................................ 2.0% Excellent Dynamic Response Small Package .............................................................. SOT-23-5(Mini-mold) Output Voltage ................................................................ 1.5V to 5.0V (0.1V steps) (For other voltages, please refer to MARK INFORMATIONS.) Built-in chip enable circuit ( 2 types; A: active Low, B: active High) Pin-out............................................................................. Similar to the LP2980/LP2985 Built-in fold-back protection circuit .................................. Typ.30mA (Current at short mode) Ceramic capacitors recommended to be used with this IC
APPLICATIONS
Power source for cellular phones such as GSM, CDMA and various kinds of PCSs. Power source for electrical appliances such as cameras, VCRs and camcorders. Power source for battery-powered equipment.
R1112N
BLOCK DIAGRAM
R1112Nxx1A
1 VDD 5 VOUT 1 VDD
R1112Nxx1B
5 VOUT
SELECTION GUIDE
The output voltage, the active type for the ICs can be selected at the user's request. Product Name R1112Nxx1-TR-FE Package SOT-23-5 Quantity per Reel 3,000 pcs Pb Free Yes Halogen Free Yes
xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps. (For other voltages, please refer to MARK INFORMATIONS.) : Designation of Active Type. (A) "L" active type (B) "H" active type
R1112N
PIN CONFIGURATION
SOT-23-5
5 4
NC
CE
PIN DESCRIPTION
Pin No 1 2 3 4 5 Symbol VDD GND
CE or CE
Pin Description Input Pin Ground Pin Chip Enable Pin No Connection Output pin
NC VOUT
) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured.
R1112N
ELECTRICAL CHARACTERISTICS
R1112Nxx1A
Symbol
VOUT IOUT VOUT/IOUT VDIF ISS Istandby VOUT/VIN RR VIN VOUT/ Topt ISC RPU VCEH
Topt=25C
Item
Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit
CE Pull-up Resistance
Conditions
VIN = Set VOUT + 1V 1mA < IOUT < 30mA = = VIN VOUT = 1.0V VIN = Set VOUT + 1V 1mA < IOUT < 80mA = =
Min.
VOUT 0.98 150
Typ.
Max.
VOUT 1.02
Unit
V mA
12
40
mV
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT + 1V VIN = VCE = Set VOUT + 1V Set VOUT+0.5V < VIN < 6.0V = = IOUT = 30mA f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V 2.0 IOUT = 30mA 40C < Topt < 85C = = VOUT = 0V 2.5 1.5 100 30 5.0 10.0 VIN 100 0.1 0.05 80 6.0 170 1.0 0.20 A A %/V dB V ppm/C mA M
CE Input Voltage H
CE Input Voltage L
V V
Vrms
VCEL en
0.25
Output Noise
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
R1112N
R1112Nxx1B
Symbol
VOUT IOUT
VOUT/IOUT
Topt=25C
Item
Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-down Resistance CE Input Voltage H CE Input Voltage L Output Noise
Conditions
VIN = Set VOUT + 1V 1mA < IOUT < 30mA = = VIN VOUT = 1.0V VIN = Set VOUT + 1V 1mA < IOUT < 80mA = =
Min.
VOUT 0.98 150
Typ.
Max.
VOUT 1.02
Unit
V mA
12
40
mV
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT + 1V VIN = Set VOUT + 1V VCE =GND Set VOUT + 0.5V < VIN < 6.0V = = IOUT = 30mA f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V 2.0 IOUT = 30mA 40C < Topt < 85C = = VOUT = 0V 2.5 1.5 0.00 BW=10Hz to 100kHz 30
100
A A
%/V dB
RR VIN
VOUT/T
6.0
V ppm/C mA
M V V
Vrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
Dropout Voltage VDIF (V) Condition Typ. 0.32 0.28 IOUT = 100mA 0.25 0.20 0.19
R1112N
OPERATION
R1112Nxx1A
1 VDD 5 VOUT 1 VDD
R1112Nxx1B
5 VOUT
R1
R2
GND
In these ICs, fluctuation of the output voltage, VOUT is detected by feed-back registers R1, R2, and the result is compared with a reference voltage by the error amplifier, so that a constant voltage is output. A current limit circuit for protection in short mode and a chip enable circuit, are included.
TECHNICAL NOTES
When using these ICs, consider the following points: Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance). We use Ceramic Capacitors for evaluation of these ICs. Recommended Capacitors; GRM40X5R225K6.3 (Murata) GRM40-034X5R335K6.3 (Murata) GRM40-034X5R475K6.3 (Murata) (Note: When the additional ceramic capacitors are connected to the Output Pin with Output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) PCB Layout Make VDD and GND lines sufficient. If their impedance is high, picking up the noise or unstable operation may result. Connect a capacitor with a capacitance value of 2.2F or more between VDD and GND pin as close as possible. Set external components, especially output capacitor as close as possible to the ICs and make wiring as short as possible.
R1112N
TEST CIRCUITS
CE 3 3 CE
IN
VDD 1
OUT IOUT
IN ISS
VDD 1
OUT
2 GND
CE 3 3
CE
IN
VDD 1
OUT IOUT
IN
VDD 1
OUT
P.G
2 GND 2.2F
2 GND I1 I2
R1112N
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
R11x2N151B
1.8 1.6
Output Voltage VOUT(V)
R11x2N201B
2.5 2
VIN=2.3V
1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 Output Current IOUT(mA)
VIN=2.0V VIN=2.5V VIN=3.5V
1.5 1 0.5 0 0
100
200
300
400
500
R11x2N301B
3.5
Output Voltage VOUT(V)
R11x2N401B
5
4
VIN=4.3V
2.5
VIN=3.3V
2 1.5 1 0.5 0 0
3 2 1 0
100
200
300
400
500
100
200
300
400
500
R11x2N501B
6
Output Voltage VOUT(V)
R1112N
2) Output Voltage vs. Input Voltage
R11x2N151B
1.600
Output Voltage VOUT(V)
R11x2N201B
2.100
Output Voltage VOUT(V)
R11x2N301B
3.100 4.500 3.000 2.900 2.800 2.700 2.600 2.500 2 3 4 5 6 7 Input Voltage VIN(V)
IOUT=1mA IOUT=30mA IOUT=50mA
R11x2N401B
4.000
3.500
3.000
R11x2N501B
5.500 5.000 4.500 4.000 3.500 3.000 2.500 2 3 4 5 6 7 Input Voltage VIN(V)
IOUT=1mA IOUT=30mA IOUT=50mA
R1112N
3) Dropout Voltage vs. Output Current
R11x2N151B
0.600
Dropout Voltage VDIF(V)
R11x2N201B
0.600 0.500 0.400 0.300 0.200 0.100 0.000
Topt=-40C Topt=25C Topt=85C
50
100
150
0.500
50
100
150
R11x2N301B
0.600
Dropout Voltage VDIF(V)
R11x2N401B
0.600 0.500 0.400 0.300 0.200 0.100 0.000
Topt=-40C Topt=25C Topt=85C
50
100
150
0.500
50
100
150
R11x2N501B
0.600 0.500 0.400 0.300 0.200 0.100 0.000 0 50 100 150 Output Current IOUT(mA)
Topt=-40C Topt=25C Topt=85C
10
R1112N
4) Output Voltage vs. Temperature
R11x2N151A/B
VIN=2.5V CIN=1F COUT=2.2F IOUT=30mA 1.53 1.52
Output VoltageVOUT(V)
R11x2N201A/B
VIN=3.0V CIN=1F COUT=2.2F IOUT=30mA 2.10 2.08 2.06 2.04 2.02 2.00 1.98 1.96 1.94 1.92 1.90
Output VoltageVOUT(V)
1.51 1.50 1.49 1.48 1.47 -50 -25 50 Temperature Topt (C) 0 25 75 100
-50
-25
75
100
R11x2N301A/B
VIN=4.0V CIN=1F COUT=2.2F IOUT=30mA 3.06 3.04 3.02 3.00 2.98 2.96 2.94 -50 -25 50 Temperature Topt (C) 0 25 75 100 4.08 4.06
Output VoltageVOUT(V)
R11x2N401A/B
VIN=5.0V CIN=1F COUT=2.2F IOUT=30mA
Output VoltageVOUT(V)
4.04 4.02 4.00 3.98 3.96 3.94 3.92 -50 -25 0 25 50 Temperature Topt (C) 75 100
R11x2N501A/B
VIN=6.0V CIN=1F COUT=2.2F IOUT=30mA 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 -50 -25 0 25 50 Temperature Topt (C) 75 100
Output VoltageVOUT(V)
11
R1112N
5) Supply Current vs. Input Voltage
R11x2N151B
120 120
R11x2N201B
Supply Current ISS (A)
100 80 60 40 20 0
R11x2N301B
120 120
R11x2N401B
Supply Current ISS (A)
100 80 60 40 20 0
R11x2N501B
120
12
R1112N
6) Supply Current vs. Temperature
R11x2N151A/B
200 VIN=2.5V CIN=1F COUT=2.2F 200
R11x2N201A/B
VIN=3.0V CIN=1F COUT=2.2F
150
150
100
100
50
50
0 -50
-25
0 -50
-25
100
R11x2N301A/B
200 VIN=4.0V CIN=1F COUT=2.2F 200
R11x2N401A/B
VIN=5.0V CIN=1F COUT=2.2F
150
150
100
100
50
50
0 -50
-25
0 -50
-25
100
R11x2N501A/B
200 VIN=6.0V CIN=1F COUT=2.2F
150
100
50
0 -50
-25
100
13
R1112N
7) Ripple Rejection vs. Frequency
R11x2N151A/B
90.00
Ripple Rejection RR (dB)
R11x2N201A/B
90.00
Ripple Rejection RR (dB)
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 10 1 Frequency Freq (kHz) 100
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 10 1 Frequency Freq (kHz) 100
R11x2N301A/B
90.00
Ripple Rejection RR (dB)
R11x2N401A/B
90.00
Ripple Rejection RR (dB)
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 10 1 Frequency Freq (kHz) 100
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 10 1 Frequency Freq (kHz) 100
R11x2N501A/B
90.00
Ripple Rejection RR (dB)
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 10 1 Frequency Freq (kHz) 100
14
R1112N
8) Ripple Rejection vs. Input Voltage (DC bias)
R11x2N301B
90.00 COUT=Ceramic 2.2F IOUT=1mA 90.00
R11x2N301B
COUT=Ceramic 2.2F IOUT=10mA
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.10
f=400Hz f=1kHz f=10kHz
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.10
f=400Hz f=1kHz f=10kHz
3.50
3.50
R11x2N301B
90.00 COUT=Ceramic 2.2F IOUT=50mA
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.10
f=400Hz f=1kHz f=10kHz
3.50
Topt=25C
VIN
VOUT
Ch1 Ch1
1.00V
15
R1112N
R11x2N201B
Tek Run : 2.50MS/s Average
Topt=25C
VIN
VOUT
Ch1
1.00V
R11x2N301B
Tek Run : 2.50MS/s Average
Topt=25C
VIN
VOUT
Ch1
1.00V
R11x2N401B
Tek Run : 2.50MS/s Average
Topt=25C
VIN
VOUT
Ch1
1.00V
16
R1112N
R11x2N501B
Tek Run : 2.50MS/s Average
Topt=25C
VIN
VOUT
Ch1
1.00V
Topt=25C
IOUT
VOUT 2
Ch1 500mV
Ch2 50.0mV
M20.0s
R11x2N201B
Tek Run : 2.50MS/s Average
Topt=25C
IOUT
VOUT 2
Ch1 500mV
17
R1112N
R11x2N301B
Tek Run : 2.50MS/s Average
Topt=25C
IOUT
VOUT 2
Ch1 500mV
R11x2N401B
Tek Run : 2.50MS/s Average
Topt=25C
IOUT
VOUT 2
Ch1 500mV
R11x2N501B
Tek Run : 2.50MS/s Average
Topt=25C
IOUT
VOUT 2
Ch1 500mV
Ch2 50.0mV
M20.0s
18
R1112N
TECHNICAL NOTES
When using these ICs, consider the following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) of which is in the range described as follows:
3 CE VOUT1 5
Ceramic Cap.
ESR IOUT
S.A
Spectrum Analyzer
VIN
Ceramic Cap.
Measuring Circuit for white noise; R1112N301B The relationship between IOUT (the output current) and ESR of the output capacitor is shown in the graphs below. The conditions when the white noise level is under 40V (Avg.) are indicated by the hatched area in the graph. (Note: When additional ceramic capacitors are connected to the output pin with the output capacitor for phase compensation, operation might be unstable. Because of this, test these ICs with the same external components as the ones to be used on the PCB.) <Measuring Conditions> (1)VIN=VOUT+1V (2)Frequency band: 10Hz to 1MHz (3)Temperature: 25C R11x2N151B
COUT=2.2F,CIN=2.2F 100 100
R11x2N151B
COUT=4.7F,CIN=2.2F
10
ESR ()
10
ESR ()
0.1
0.1
19
R1112N
R11x2N301B
COUT=2.2F,CIN=2.2F 100 100
R11x2N301B
COUT=4.7F,CIN=2.2F
10
ESR ()
ESR ()
10
0.1
0.1
TYPICAL APPLICATION
CE CE
IN
VOUT
OUT
IN
VDD
OUT
Cap.
Cap.
Cap.
(External Components) Output Capacitor; Ceramic 2.2F (Set Output Voltage in the range from 2.5 to 5.0V) Ceramic 4.7F (Set Output Voltage in the range from 1.5 to 2.5V) Input Capacitor; Ceramic 2.2F
20
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