General Description Product Summary: 30V Dual Asymmetric N-Channel MOSFET
General Description Product Summary: 30V Dual Asymmetric N-Channel MOSFET
General Description Product Summary: 30V Dual Asymmetric N-Channel MOSFET
Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units
Maximum Junction-to-Ambient A t ≤ 10s 30 30 40 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 50 50 65 65 °C/W
Maximum Junction-to-Case Steady-State RθJC 4.6 3.1 6 4 °C/W
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
70 70
4V
VDS=5V
60 60
50 4.5V 50
10V 3.5V
40 40 125°C
ID (A)
ID(A)
30 30
25°C
20 20
10 VGS=3V 10
0 0
0 1 2 3 4 5 0 1 2 3 4 5
10 1.8
Normalized On-Resistance
8 VGS=4.5V 1.6
VGS=10V
RDS(ON) (mΩ)
ID=20A
6 1.4
4 1.2
VGS=4.5V
VGS=10V ID=20A
2 1
0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
20 1.0E+01
ID=20A
1.0E+00
16
125°C
1.0E-01
RDS(ON) (mΩ)
12
IS (A)
1.0E-02
125°C
8 25°C
1.0E-03
4
1.0E-04
25°C
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
10 1200
VDS=15V
ID=20A
1000
8
Ciss
Capacitance (pF)
800
VGS (Volts)
6
600
4 Coss
400
2
200 Crss
0 0
0 5 10 15 0 5 10 15 20 25 30
1000.0 500
TJ(Max)=150°C
10µs TC=25°C
100.0 400
RDS(ON)
limited 10µs
Power (W)
300
ID (Amps)
10.0
100µs
DC 1ms
1.0 10ms 200
0.0 0
0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
VGS> or equal to 4.5V
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Case (Note F)
Operating Area (Note F)
10 D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC In descending order
ZθJC Normalized Transient
RθJC=6°C/W
1
Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
25 60
50
20
Power Dissipation (W)
5
10
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
10 D=Ton/T
ZθJA Normalized Transient
0.1
PD
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 100
4.5V VDS=5V
80 80
3V
60 60 125°C
10V
ID (A)
ID(A)
40 40 25°C
VGS=2.5V
20 20
0 0
0 1 2 3 4 5 0 1 2 3 4 5
5 1.8
VGS=4.5V
RDS(ON) (mΩ)
1.4
3
VGS=4.5V
1.2 ID=20A
2
VGS=10V
1
1
0.8
0 0 25 50 75 100 125 150 175
0 5 10 15 20 25 30
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)
10 1.0E+01
ID=20A
1.0E+00
8 125°C
1.0E-01
RDS(ON) (mΩ)
6 125°C
IS (A)
25°C
1.0E-02
4
1.0E-03
2
25°C 1.0E-04
0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
10 3000
VDS=15V
ID=20A
2500
8 Ciss
Capacitance (pF)
2000
VGS (Volts)
6
1500
4
Coss
1000
2
500 Crss
0 0
0 10 20 30 40 0 5 10 15 20 25 30
1000.0 500
TJ(Max)=150°C
10µs TC=25°C
100.0 RDS(ON) 400
limited 10µs
Power (W)
300
ID (Amps)
10.0 100µs
1ms
DC
1.0 10ms 200
0.0 0
0.01 0.1 1 10 100 0.000010.0001 0.001 0.01 0.1 1 10 100
VDS (Volts)
Pulse Width (s)
VGS> or equal to 4.5V
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Case (Note F)
Operating Area (Note F)
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
ZθJC Normalized Transient
RθJC=4°C/W
1
0.1 PD
Single Pulse
Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
40 100
80
30
Power Dissipation (W)
10
20
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
D=Ton/T
10
TJ,PK=TA+PDM.ZθJA.RθJA
ZθJA Normalized Transient
In descending order
Thermal Resistance
0.1
PD
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
ton toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds