AO4620

Complementary Enhancement Mode Field Effect Transistor

General Description Features
The AO4620 uses advanced trench technology n-channel p-channel
MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30V
charge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V)
in inverter and other applications. RDS(ON) RDS(ON)
< 24mΩ (VGS=10V) < 32mΩ (VGS = -10V)
< 36mΩ (VGS=4.5V) < 55mΩ (VGS = -4.5V)

100% UIS tested

100% Rg tested

SOIC-8
Top View Bottom View
Top View D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
S2 S1

Pin1 n-channel p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 7.2 -5.3
Current F TA=70°C ID 6.2 -4.5 A
B
Pulsed Drain Current IDM 64 -40
TA=25°C 2 2
F
PD W
Power Dissipation TA=70°C 1.44 1.44
B
Avalanche Current IAR 9 17 A
B
Repetitive avalanche energy 0.3mH EAR 12 43 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s n-ch 50 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State n-ch 80 100 °C/W
Maximum Junction-to-Lead C Steady-State RθJL n-ch 32 40 °C/W
A
Maximum Junction-to-Ambient t ≤ 10s p-ch 50 62.5 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State p-ch 80 100 °C/W
Maximum Junction-to-Lead C Steady-State RθJL p-ch 32 40 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4620

N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=10V, VDS=5V 64 A
VGS=10V, ID=7.2A 17.7 24
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 25 32
VGS=4.5V, ID=5A 24.8 36 mΩ
gFS Forward Transconductance VDS=5V, ID=7.2A 20 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
ISM Pulsed Body-Diode CurrentB 64 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 67 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.8 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 7.2 11 nC
Qg(4.5V) Total Gate Charge 3.5 nC
VGS=10V, VDS=15V, ID=7.2A
Qgs Gate Source Charge 1.3 nC
Qgd Gate Drain Charge 1.7 nC
tD(on) Turn-On DelayTime 4.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.1Ω, 2.7 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 14.9 ns
tf Turn-Off Fall Time 2.9 ns
trr Body Diode Reverse Recovery Time IF=7.2A, dI/dt=100A/µs 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs 4.5 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.
Rev 8: May 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4620

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 15
5V
10V 6V VDS=5V
50
12 VDS=5V

40
6V 9
4.5V
ID (A)

ID(A)
30
6
20 VGS=3.5V 125°C 125°C 25°C
3
10 25°

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

45 1.8

40
Normalized On-Resistance

VGS=4.5V 1.6 VGS=10V

Id=7.7A
35
VGS=4.5V 1.4
Ω)
RDS(ON) (mΩ

30
1.2
25

VGS=10V
VGS=10V 1
20 VGS=4.5V
Id=5A
15 0.8

10 0.6
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

60 1.0E+01
ID=7.2A ID=7.7A
50 1.0E+00

1.0E-01
Ω)

40
RDS(ON) (mΩ

125°C
IS (A)

125°C 125°
1.0E-02
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY25°C
LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C 1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C
10
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4620

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDSV=15V
DS=15V
ID=7.2A
ID=7.7A 500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
Coss
200
Coss
2
100
Crss
0 Crss
0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 30
10µs TJ(Max)=150°C
RDS(ON) 25 TA=25°C
10.0
limited
20
Power (W)

100µs
ID (Amps)

1.0 1ms 15
10ms
10
0.1s
0.1 TJ(Max)=150°C DC
TA=25°C 10s 5

0
0.0
0.001 0.01 0.1 1 10 100 1000
0.01 0.1 1 10 100 Pulse Width (s)
VDS (Volts) Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=100°C/W
Thermal Resistance

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4620

P-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 -1.85 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -40 A
VGS=-10V, ID=-5.3A 23 32
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 31.5
VGS=-4.5V, ID=-4.5A 33 55 mΩ
gFS Forward Transconductance VDS=-5V, ID=-5.3A 19 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.8 -1 V
IS Maximum Body-Diode Continuous Current -3.5 A
ISM Pulsed Body-Diode CurrentB -40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 760 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 140 pF
Crss Reverse Transfer Capacitance 95 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.2 5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 13.6 16 nC
Qg(4.5V) Total Gate Charge (4.5V) 6.7 nC
VGS=-10V, VDS=-15V, ID=-5.3A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=2.8Ω, 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=-5.3A, dI/dt=100A/µs 15 ns
Qrr Body Diode Reverse Recovery Charge IF=-5.3A, dI/dt=100A/µs 9.7 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev8: May 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4620

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 30
-10V -6V -5V -4.5V VDS=-5V
35
25
30
-4V
20
25
-ID (A)

-ID(A)
20 15

15 -3.5V
10
10 125°C
5 25°C
5 VGS=-3V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

50 VGS=-4.5V 1.8
45 VGS=-10V
Normalized On-Resistance

VGS=-4.5V 1.6 ID=-5.3A

40
ID=-4.5A
Ω)

35
RDS(ON) (mΩ

1.4
30
ID=-5.6A
VGS=-4.5V
25 1.2
ID=-4.5A
20 VGS=-10V
1
15 VGS=-10V

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

80 1.0E+02
ID=-5.6A
ID=-5.3A
1.0E+01
60 125°C 1.0E+00
125°C
25°C
Ω)

125°C
RDS(ON) (mΩ

1.0E-01
-IS (A)

40
1.0E-02
25°C
1.0E-03
20
25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4620

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200

VDS=-15V 1000
8 ID=-5.3A
Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss
2
200

Crss
0 0
0 2 46 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
10µs 30

100µs 25
10.0 TJ(Max)=150°C
Power (W)

RDS(ON) 20 TA=25°C
ID (Amps)

limited 0.1s 1ms

1.0 15
10s 10ms
10
DC
0.1
5
TJ(Max)=150°C
TA=25°C 0
0.0 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=100°C/W
Thermal Resistance

PD
0.1
Ton
T

Single Pulse
0.01
0.00001 0.0001 0.001 0.01 Pulse Width
0.1 (s) 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

 SEATING PLANE
GAUGE PLANE
8

1
θ

RECOMMENDED LAND PATTERN

DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES
SYMBOLS
MIN NOM MAX MIN NOM MAX
A 1.35 1.65 1.75 0.053 0.065 0.069
A1 0.10 0.15 0.25 0.004 0.006 0.010
A2 1.25 1.50 1.65 0.049 0.059 0.065
b 0.31 0.41 0.51 0.012 0.016 0.020
c 0.17 0.20 0.25 0.007 0.008 0.010
D 4.80 4.90 5.00 0.189 0.193 0.197
E 3.80 3.90 4.00 0.150 0.154 0.157
e 1.27 BSC 0.050 BSC
E1 5.80 6.00 6.20 0.228 0.236 0.244
h 0.25 0.30 0.50 0.010 0.012 0.020
L 0.40 0.69 1.27 0.016 0.027 0.050
θ 0° 4° 8° 0° 4° 8°

UNIT: mm

NOTE
1. ALL DIMENSIONS ARE IN MILLMETERS.
2. DIMENSIONS ARE INCLUSIVE OF PLATING.
3. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS.
MOLD FLASH AT THE NON-LEAD SIDES SHOULD BE LESS THAN 6 MILS EACH.
4. DIMENSION L IS MEASURED IN GAUGE PLANE.
5. CONTROLLING DIMENSION IS MILLIMETER.
CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
AOS Semiconductor
Product Reliability Report

AO4620, rev C

Plastic Encapsulated Device

ALPHA & OMEGA Semiconductor, Inc

www.aosmd.com
This AOS product reliability report summarizes the qualification result for AO4620.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AO4620
passes AOS quality and reliability requirements. The released product will be categorized by
the process family and be monitored on a quarterly basis for continuously improving the
product quality.

Table of Contents:
I. Product Description
II. Package and Die information
III. Environmental Stress Test Summary and Result
IV. Reliability Evaluation

I. Product Description:
The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and
low gate charge. The complementary MOSFETs may be used in inverter and other
applications.

-RoHS Compliant
-Halogen Free

Detailed information refers to datasheet.

II. Die / Package Information:

AO4620
Process Standard sub-micron
Low voltage N+P channel
Package Type 8 lead SOIC
Lead Frame Copper
Die Attach Ag Epoxy
Bonding Wire Au & Cu wire
Mold Material Epoxy resin with silica filler
Flammability Rating UL-94 V-0
MSL (moisture sensitive level) Level 1 based on J-STD-020

Note * based on information provided by assembler and mold compound supplier

 III. Result of Reliability Stress for AO4620

Test Item Test Condition Time Lot Total Number Standard

Point Attribution Sample of
size Failures
MSL 168hr 85°c - 29 lots 3575pcs 0 JESD22-
Precondition /85%RH +3 cycle A113
reflow@260°c
HTGB Temp = 150 °c, 168hrs 154pcs 0 JESD22-
Vgs=100% of 500 hrs 2 lots A108
Vgsmax 1000 hrs
(Note A*) 77pcs / lot
HTRB Temp = 150 °c, 168hrs 154pcs 0 JESD22-
Vds=80% of 500 hrs 2 lots A108
Vdsmax 1000 hrs
(Note A*) 77pcs / lot
HAST 130 +/- 2°°c, 100 hrs 16 lots 880pcs 0 JESD22-
85%RH, 33.3 psi, A110
Vgs = 80% of Vgs
max (Note A*) 55 pcs / lot
Pressure Pot 121°°c, 29.7psi, 96 hrs 20 lots 1100pcs 0 JESD22-
RH=100% A102

(Note A*) 55 pcs / lot

Temperature -65°°c to 150°°c, 250 / 500 29 lots 1595pcs 0 JESD22-
Cycle air to air cycles A104

(Note A*) 55 pcs / lot

Note A: The reliability data presents total of available generic data up to the published date.

IV. Reliability Evaluation

FIT rate (per billion): 23

MTTF = 4957 years

The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AO4620). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
2 9 9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 / [2x4x77x500x258] = 23
9 7
MTTF = 10 / FIT = 4.34 x 10 hrs = 4957 years

Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C
Af 258 87 32 13 5.64 2.59 1

Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16

Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
K = Boltzmann’s constant, 8.617164 X 10-5eV / K