AONH36334
AONH36334
AONH36334
G2
S2
S2
S2
(S1/D2)
D1
G1
D1
D1
D1
Thermal Characteristics
Parameter Symbol Typ Q1 Max Q1 Typ Q2 Max Q2 Units
A
Maximum Junction-to-Ambient t ≤ 10s 40 50 40 50 °C/W
AD RqJA
Maximum Junction-to-Ambient Steady-State 70 90 70 90 °C/W
Maximum Junction-to-Case Steady-State RqJC 4.5 5.4 4.2 5 °C/W
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale
80 60
10V 6V VDS=5V
8V
50
4.5V
60
4V 40
125°C
ID (A)
ID(A)
40 30
3.5V
20
20
25°C
VGS=3V 10
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
20 1.6
Normalized On-Resistance VGS=10V
ID=13A
VGS=4.5V
15 1.4
RDS(ON) (mW)
10 1.2
VGS=4.5V
ID=10A
5 VGS=10V
1
0
0.8
0 2 4 6 8 10 12 14
0 25 50 75 100 125 150 175
25 1.0E+02
ID=13A
1.0E+01
20
40
1.0E+00
125°C
RDS(ON) (mW)
15 125°C 1.0E-01
IS (A)
1.0E-02 25°C
10
1.0E-03
25°C
5
1.0E-04
1.0E-05
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 700
VDS=15V
ID=13A 600
8
Ciss
500
Capacitance (pF)
VGS (Volts)
6
400
300
4
Coss
200
2
Crss
100
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 200
10ms
RDS(ON) 160
limited TJ(Max)=150°C
10.0
100us TC=25°C
Power (W)
ID (Amps)
120
DC 1ms
1.0
10ms
80
0.1
TJ(Max)=150°C 40
TC=25°C
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient
Thermal Resistance
RqJC=5.4°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
30 40
25
Power Dissipation (W)
15 20
10
10
5
0
0
0 25 50 75 100 125 150
0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
10
D=Ton/T In descending order
ZqJA Normalized Transient
1 RqJA=90°C/W 40
0.1
PD
0.01
Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale
100 60
10V 8V VDS=5V
5V
4.5V 50
80
40
60 4V 125°C
ID (A)
ID(A)
30
40
20
20 Vgs=3V 25°C
10
0 0
0 1 2 3 4 5 0 1 2 3 4 5
10 1.6
Normalized On-Resistance VGS=10V
9 ID=15A
VGS=4.5V 1.4
8
RDS(ON) (mW)
17
7 1.2 5
2
VGS=4.5V
6
VGS=10V 1
10
ID=10A
5
4 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
20 1.00E+02
ID=15A
1.00E+01
15 40
125°C
RDS(ON) (mW)
125°C 1.00E+00
10
IS (A)
25°C
1.00E-01
5
1.00E-02
25°C
0 1.00E-03
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
10 1200
VDS=15V
ID=15A
1000
8 Ciss
Capacitance (pF)
800
VGS (Volts)
6
600
4
Coss
400
2
200
Crss
0 0
0 3 6 9 12 15 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 200
TJ(Max)=150°C
10ms
RDS(ON) TC=25°C
160
10.0
100ms
ID (Amps)
DC
Power (W)
1ms 120
1.0 10ms
80
0.1
TJ(Max)=150°C
40
TC=25°C
0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient
Thermal Resistance
RqJC=5°C/W 40
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
30 50
25
40
20
30
15
20
10
5 10
0
0
0 25 50 75 100 125 150
0 25 50 75 100 125 150
TCASE (°C)
TCASE (°C)
Figure 13: Current De-rating (Note F)
Figure 12: Power De-rating (Note F)
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
D=Ton/T In descending order
ZqJA Normalized Transient
1 RqJA=90°C/W 40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
ton toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds