Nothing Special   »   [go: up one dir, main page]

MOCD207M, MOCD208M Dual-Channel Phototransistor Small Outline Surface Mount Optocouplers

Download as pdf or txt
Download as pdf or txt
You are on page 1of 9

MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

April 2013

MOCD207M, MOCD208M
Dual-channel Phototransistor Small Outline Surface
Mount Optocouplers
Features Description
■ Dual Channel Optocoupler The MOCD207M/MOCD208M consist of two silicon
■ Convenient Plastic SOIC-8 Surface Mountable phototransistors optically coupled to two GaAs infrared
Package Style LEDs. These devices are constructed in a small outline
■ Two Channels in One Compact Surface Mount surface mount package which conforms to the standard
Package SOIC-8 footprint.
■ Closely Matched Current Transfer Ratios to Minimize
Unit-to-Unit Variation
■ Minimum V(BR)CEO of 70 V Guaranteed
■ Standard SOIC-8 Footprint, with 0.050” Lead Spacing
■ High Input-Output Isolation of 2500 VAC(rms)
Guaranteed
■ Meets U.L. Regulatory Requirements, File #E90700,
Volume 2

Applications
■ Feedback Control Circuits
■ Interfacing and Coupling Systems of Different
Potentials and Impedances
■ General Purpose Switching Circuits
■ Monitor and Detection Circuits

Schematic Package Outline

ANODE 1 1 8 COLLECTOR 1

CATHODE 1 2 7 EMITTER 1
Figure 2. Package Outline

ANODE 2 3 6 COLLECTOR 2

CATHODE 2 4 5 EMITTER 2

Figure 1. Schematic

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.

Symbol Rating Value Unit


Emitter
IF Forward Current – Continuous 60 mA
IF (pk) Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A
VR Reverse Voltage 6.0 V
PD LED Power Dissipation @ TA = 25°C 90 mW
Derate above 25°C 0.8 mW/°C
Detector
VCEO Collector-Emitter Voltage 70 V
VCBO Collector-Base Voltage 70 V
VECO Emitter-Collector Voltage 7.0 V
IC Collector Current-Continuous 150 mA
PD Detector Power Dissipation @ TA = 25°C 150 mW
Derate above 25°C 1.76 mW/°C
Total Device
VISO Input-Output Isolation Voltage(1, 2) 2500 Vac(rms)
(f = 60 Hz, t = 1 minute)
PD Total Device Power Dissipation @ TA = 25°C 250 mW
Derate above 25°C 2.94 mW/°C
TA Ambient Operating Temperature Range -40 to +100 °C
Tstg Storage Temperature Range -40 to +125 °C
TL Lead Soldering Temperature (1/16” from case, 260 °C
10 second duration)

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7 2
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified(3)
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
Emitter
VF Input Forward Voltage IF = 30 mA All 1.25 1.55 V
IR Reverse Leakage Current VR = 6.0 V All 0.001 100 µA
C Capacitance All 18 pF
Detector
ICEO Collector-Emitter Dark Current VCE = 10 V, TA = 25°C All 1.0 50 nA
ICEO VCE = 10 V, TA = 100°C All 1.0 µA
V(BR)CEO Collector-Emitter Breakdown IC = 100 µA All 70 100 V
Voltage
V(BR)CEO Emitter-Collector Breakdown IE = 100 µA All 7.0 10 V
Voltage
CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 V All 7.0 pF
Coupled
CTR Current Transfer Ratio, IF = 10 mA, VCE = 5 V MOCD207M 100 200 %
Collector to Emitter(4) MOCD208M 40 125
IF = 1 mA, VCE = 5 V MOCD207M 34
MOCD208M 13
VCE (sat) Collector-Emitter Saturation IC = 2.0 mA, IF = 10 mA All 0.4 V
Voltage
ton Turn-On Time IC = 2.0 mA, VCC = 10 V, All 3.0 µs
RL = 100 Ω
toff Turn-Off Time IC = 2.0 mA, VCC = 10 V, All 2.8 µs
RL = 100 Ω
tr Rise Time IC = 2.0 mA, VCC = 10 V, All 1.6 µs
RL = 100 Ω
tf Fall Time IC = 2.0 mA, VCC = 10 V, All 2.2 µs
RL = 100 Ω
VISO Isolation Surge Voltage(1)(2) f = 60 Hz, t = 1 minute, All 2500 Vac(rms)
II-O ≤ 2 µA
RISO Isolation Resistance(2) VI-O = 500 V All 1011 Ω
CISO Isolation Capacitance(2) VI-O = 0 V, f = 1 MHz All 0.2 pF

*Typical values at TA = 25°C

Notes:
1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.
3. Always design to the specified minimum/maximum electrical limits (where applicable).
4. Current Transfer Ratio (CTR) = IC / IF x 100%.

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7 3
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Typical Performance Curves
1.8 10

I C - OUTPUT COLLECTOR CURRENT (NORMALIZED)


1.7
VF - FORWARD VOLTAGE (V)

1.6
VCE = 5 V
1.5 NORMALIZED TO I F = 10 mA
1

1.4

TA = -55°C
1.3

TA = 25°C
1.2
0.1

1.1 TA = 100°C

1.0
1 10 100
IF - LED FORWARD CURRENT (mA)
0.01
Figure 3. LED Forward Voltage vs. Forward Current
0.1 1 10 100
IF - LED INPUT CURRENT (mA)
10 Figure 4. Output Curent vs. Input Current
I C - OUTPUT COLLECTOR CURRENT (NORMALIZED)

1.6

I C - OUTPUT COLLECTOR CURRENT (NORMALIZED)


1.4

1.2

1.0
1
0.8

0.6

0.4

0.2
I F = 10 mA
NORMALIZED TO TA = 25 o C
NORMALIZED TO VCE = 5 V
0.1 0.0
-80 -60 -40 -20 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 9 10

TA - AMBIENT TEMPERATURE ( C)
o VCE - COLLECTOR -EMITTER VOLTAGE (V)

Figure 5. Output Current vs. Ambient Temperature Figure 6. Output Current vs. Collector-Emitter Voltage

10000
I CEO - COLLECTOR -EMITTER DARK CURRENT (nA)

VCE = 10 V
1000

100

10

0.1
0 20 40 60 80 100
o
TA - AMBIENT TEMPERATURE ( C)

Figure 7. Dark Current vs. Ambient Temperature

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7 4
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Package Dimensions
8-pin SOIC Surface Mount
8

0.164 (4.16)
0.144 (3.66)

0.202 (5.13)
SEATING PLANE

0.182 (4.63)

0.143 (3.63) 0.010 (0.25)


0.123 (3.13) 0.006 (0.16)

0.021 (0.53) 0.244 (6.19)


0.008 (0.20)
0.011 (0.28) 0.224 (5.69)
0.003 (0.08)
0.050 (1.27) Typ.

Lead Coplanarity: 0.004 (0.10) MAX

Recommended Pad Layout

0.024 (0.61)

0.060 (1.52)

0.275 (6.99)

0.155 (3.94)

0.050 (1.27)

Dimensions in inches (mm).

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7 5
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Ordering Information
Option Order Entry Identifier Description
V V VDE Approved
D1 D1 Tape and Reel (500 units per reel), 16 mm Width Carrier Tape
D1V D1V VDE Approved, Tape and Reel (500 units per reel), 16 mm Width Carrier Tape
D2 D2 Tape and Reel (2500 units per reel), 16 mm Width Carrier Tape
D2V D2V VDE Approved, Tape and Reel (2500 units per reel), 16 mm Width Carrier Tape
R2 R2 Tape and Reel (2500 units per reel), 12 mm Width Carrier Tape
R2V R2V VDE Approved, Tape and Reel (2500 units per reel), 12 mm Width Carrier Tape

Marking Information
1

D207 2

6
V X YY S

3 4 5

Definitions
1 Fairchild logo
2 Device number
VDE mark (Note: Only appears on parts ordered with VDE
3
option – See order entry table)
4 One digit year code, e.g., ‘3’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7 6
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Carrier Tape Specifications
8.0 ± 0.10
3.50 ± 0.20
2.0 ± 0.05 Ø1.5 MIN
0.30 MAX 4.0 ± 0.10 1.75 ± 0.10

5.5 ± 0.05
12.0 ± 0.3
8.3 ± 0.10
5.20 ± 0.20

0.1 MAX 6.40 ± 0.20 Ø1.5 ± 0.1/-0

User Direction of Feed

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7 7
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers
Reflow Profile
Max. Ramp-up Rate = 3°C/S
TP Max. Ramp-down Rate = 6°C/S
260
240 tP
TL
220
200 Tsmax
tL
Temperature (°C)

180 Preheat Area


160
Tsmin
140
ts
120
100
80
60
40
20
0
120 240 360
Time 25°C to Peak
Time (seconds)

Profile Freature Pb-Free Assembly Profile


Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (tL to tP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second maximum
Time 25°C to Peak Temperature 8 minutes maximum

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7 8
MOCD207M, MOCD208M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com


MOCD207M, MOCD208M Rev. 1.0.7 9

You might also like