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Search Results (319)

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12 pages, 8419 KiB  
Article
Designing a Novel THz Band 2-D Wide-Angle Scanning Phased-Array Antenna Based on a Decoupling Surface
by Bao Xiong, Wenxuan Xie and Yongzhong Zhu
Appl. Sci. 2024, 14(19), 8618; https://doi.org/10.3390/app14198618 - 24 Sep 2024
Viewed by 324
Abstract
This paper proposes a novel THz band 2-D wide-angle scanning phased-array antenna (PAA) based on a decoupling surface. The simulated S11 bandwidth under periodic boundary conditions is 106–119 GHz, with stable gain within the bandwidth. The designed decoupling surface effectively reduces the [...] Read more.
This paper proposes a novel THz band 2-D wide-angle scanning phased-array antenna (PAA) based on a decoupling surface. The simulated S11 bandwidth under periodic boundary conditions is 106–119 GHz, with stable gain within the bandwidth. The designed decoupling surface effectively reduces the coupling between elements, and the simulated active VSWR performance and ground surface current distribution under periodic boundary conditions confirm this. An 8 × 8 (64-element) planar PAA is modeled and simulated in CST2022 to verify the beam-scanning performance of the PAA. According to the simulation results, a 2-D wide-angle scanning of ±48° is achieved in the 106–114 GHz range, while in the 115–119 GHz range, a wide-angle scanning of ±48° is achieved on the E-plane, and the beam-scanning range on the H-plane reaches ±40°. Moreover, the normal peak gain is stably maintained at 21.9–22.8 dBi, with a normalized radiation efficiency as high as 95%, and the scanning radiation efficiency is higher than 81%. Due to its stable gain and 2-D wide-angle scanning performance, the proposed PAA has a broad application prospect in terahertz wireless communication equipment. Full article
(This article belongs to the Section Electrical, Electronics and Communications Engineering)
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Figure 1

Figure 1
<p>(<b>a</b>) Three-dimensional exploded view of the element. Top view of (<b>b</b>) decoupling surface, (<b>c</b>) radiating patch, (<b>d</b>) slot layer, and (<b>e</b>) feeding line.</p>
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<p>The radiation boundary simulation results of the element. (<b>a</b>) S-parameter. (<b>b</b>) Peak gain. (<b>c</b>) Beam width. (<b>d</b>) Radiation pattern at 112 GHz.</p>
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<p>The periodic boundary simulation results of the element. (<b>a</b>) S-parameter and VSWR. (<b>b</b>) Peak gain.</p>
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<p>The S<sub>11</sub> curves corresponding to different <span class="html-italic">L</span><sub>1</sub>.</p>
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<p>The periodic boundary simulation active VSWR. (<b>a</b>) With/without decoupling surface. (<b>b</b>) With/without metallized wall.</p>
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<p>The simulation surface current distribution of the ground at 112 GHz. (<b>a</b>) The proposed element. (<b>b</b>) Without decoupling surface. (<b>c</b>) Without metallized wall.</p>
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<p>The S-parameter simulation results of the 2 × 2 array.</p>
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<p>The CST simulation model of the 8 × 8 planar PAA. (<b>a</b>) Top view. (<b>b</b>) Bottom view. (<b>c</b>) Three-dimensional perspective view.</p>
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<p>The simulation results. (<b>a</b>) Active S-parameter. (<b>b</b>) Realized gains and radiation efficiencies when scanning to different angles.</p>
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<p>The scanning patterns of the 8 × 8 PAA at 106 GHz. (<b>a</b>) E-plane; (<b>b</b>) H-plane.</p>
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<p>The scanning patterns of the 8 × 8 PAA at 114 GHz. (<b>a</b>) E-plane; (<b>b</b>) H-plane.</p>
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<p>The scanning patterns of the 8 × 8 PAA at 119 GHz. (<b>a</b>) E-plane; (<b>b</b>) H-plane.</p>
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12 pages, 2763 KiB  
Article
Terahertz Modulation Properties Based on ReS2/Si Heterojunction Films
by Xunjun He, Han Xu, Hongyuan Liu, Jia Nie and Guangjun Lu
Crystals 2024, 14(9), 799; https://doi.org/10.3390/cryst14090799 - 10 Sep 2024
Viewed by 300
Abstract
Low cost, low power consumption and high performance are urgent needs for the application of terahertz modulation devices in the 6G field. Rhenium disulfide (ReS2) is one of the ideal candidate materials due to its unique direct band gap, but it [...] Read more.
Low cost, low power consumption and high performance are urgent needs for the application of terahertz modulation devices in the 6G field. Rhenium disulfide (ReS2) is one of the ideal candidate materials due to its unique direct band gap, but it lacks in-depth research. In this work, a highly stable ReS2 nanodispersion was prepared by liquid-phase exfoliation, and a uniform, dense and well-crystallized ReS2 film was prepared on high-resistivity silicon by drop casting. The morphological, optical and structural properties of the ReS2/Si heterojunction film were characterized by OM, SEM, AFM, XRD, RS and PL. The terahertz performance was tested by using a homemade THz-TDS instrument, and the influence of different laser wavelengths and powers on the terahertz modulation performance of the sample was analyzed. The modulation depth of the sample was calculated based on the transmission curve, and the changes in the refractive index and conductivity of the sample with frequency at the corresponding laser power were calculated. The results show that the fabricated ReS2/Si heterojunction terahertz modulator can stably achieve 30% broadband modulation in the range of 0.3~1.5 THz under the low-power pumping of 1555 mW/cm2, and the maximum conductivity is 3.8 Ω−1m−1. Full article
(This article belongs to the Special Issue Advanced Research in 2D Materials)
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<p>ReS<sub>2</sub>/Si heterojunction film preparation process.</p>
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<p>Characterization of a ReS<sub>2</sub>/Si heterojunction. (<b>a</b>) A photo of a ReS<sub>2</sub>/Si heterojunction film showing a thin-film image under an optical microscope. (<b>b</b>) An AFM image of a ReS<sub>2</sub>/Si heterojunction film. (<b>c</b>) An SEM image of a ReS<sub>2</sub>/Si heterojunction film. (<b>d</b>) An XRD image of a ReS<sub>2</sub>/Si heterojunction film. (<b>e</b>) A Raman image of a ReS<sub>2</sub>/Si heterojunction film. (<b>f</b>) A PL image of a ReS<sub>2</sub>/Si heterojunction film.</p>
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<p>(<b>a</b>) Schematic diagram of terahertz time-domain spectrum system. (<b>b</b>) Schematic diagram of terahertz modulation.</p>
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<p>(<b>a</b>)Terahertz time-domain of ReS<sub>2</sub>/Si heterojunction sample pumped at 520 nm. (<b>b</b>) Terahertz frequency-domain spectra of ReS<sub>2</sub>/Si heterojunction sample pumped at 520 nm. (<b>c</b>) Terahertz transmission curve of ReS<sub>2</sub>/Si heterojunction sample pumped at 520 nm.</p>
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<p>(<b>a</b>) Terahertz-modulated capability of ReS<sub>2</sub>/Si heterojunction film. (<b>b</b>) Modulation depth of terahertz waves at 0.5 THz, 0.9 THz, 1.2 THz and 1.6 THz for ReS<sub>2</sub>/Si heterojunction samples.</p>
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<p>Refractive index of terahertz waves in ReS<sub>2</sub>/Si heterojunction films.</p>
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<p>Electrical conductivity of ReS<sub>2</sub>/Si heterojunction film.</p>
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26 pages, 11394 KiB  
Review
Germanium Single Crystals for Photonics
by Grigory Kropotov, Vladimir Rogalin and Ivan Kaplunov
Crystals 2024, 14(9), 796; https://doi.org/10.3390/cryst14090796 - 9 Sep 2024
Viewed by 342
Abstract
Germanium (Ge) is a system-forming material of IR photonics for the atmospheric transparency window of 8–14 µm. For optics of the 3–5 µm range, more widespread silicon (Si), which has phonon absorption bands in the long-wave region, is predominantly used. A technology for [...] Read more.
Germanium (Ge) is a system-forming material of IR photonics for the atmospheric transparency window of 8–14 µm. For optics of the 3–5 µm range, more widespread silicon (Si), which has phonon absorption bands in the long-wave region, is predominantly used. A technology for growing Ge single crystals has been developed, allowing the production of precision optical parts up to 500 mm in diameter. Ge is used primarily for the production of transparent optical parts for thermal imaging devices in the 8–14 µm range. In addition, germanium components are widely used in a large number of optical devices where such properties as mechanical strength, good thermal properties, and climatic resistance are required. A very important area of application of germanium is nonlinear optics, primarily acousto-optics. The influence of doping impurities and temperature on the absorption of IR radiation in germanium is considered in detail. The properties of germanium photodetectors are reported, primarily on the effect of photon drag of holes. Optical properties in the THz range are considered. The features of optical properties for all five stable isotopes of germanium are studied. The isotopic shift of absorption bands in the IR region, caused by phonon phenomena, which was discovered by the authors for the first time, is considered. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
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<p>Block of output windows made of Ge single crystals with a diameter of 420 mm of the experimental 4-beam laser complex. Reprinted with permission from Ref. [<a href="#B6-crystals-14-00796" class="html-bibr">6</a>]. 2013, Center for Scientific Periodicals NUST MISIS.</p>
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<p>Dependence of the absorption coefficient of n-type germanium in the region of maximum transparency: (<b>a</b>) on the wavelength λ (μm): 1. ρ = 0.03 Ohm·cm; 2. ρ = 1.0 Ohm·cm; 3. ρ = 2.0 Ohm·cm; 4. ρ = 2.5 Ohm·cm; 5. ρ = 3.0 Ohm·cm; 6. ρ = 5.5 Ohm·cm; (<b>b</b>) at λ = 10.6 μm on the specific resistance, T<sub>1</sub> = 297 K, T<sub>2</sub> = 220 K; (<b>c</b>) on the temperature (λ = 10.6 μm): ρ<sub>1</sub> = 0.03 Ohm·cm; ρ<sub>2</sub> = 2.5 Ohm·cm. Reprinted with permission from Ref. [<a href="#B5-crystals-14-00796" class="html-bibr">5</a>]. 2015, Rogalin V.E.</p>
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<p>Dependence of spectral transmittance (T), demonstrating the position of absorption peaks in the spectra of samples of natural (<sup>nat</sup>Ge) and monoisotopic germanium crystals (the mass numbers of isotopes are indicated: <sup>70</sup>Ge, <sup>72</sup>Ge, <sup>73</sup>Ge, <sup>74</sup>Ge, <sup>76</sup>Ge) in the frequency range of the spectrum 407–438 cm<sup>−1</sup> (corresponds to λ = 11–40 μm).</p>
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<p>Dependence of the frequencies ν of the peaks of the phonon absorption of the isotopically pure germanium single crystals on the mass number of the isotope, M. Reprinted with permission from Ref. [<a href="#B48-crystals-14-00796" class="html-bibr">48</a>]. 2015, Pleiades Publishing, Ltd.</p>
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<p>Experimental setup for studying the characteristics of pulsed electric discharge CO<sub>2</sub> lasers and the effect of their radiation on materials. Laser cuvettes with Brewster windows made of NaCl single crystals with a diameter of 300 mm. Reprinted with permission from Ref. [<a href="#B5-crystals-14-00796" class="html-bibr">5</a>]. 2015, Rogalin E.</p>
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<p>Laser pulse shape measured by a photodetector based on the photon drag effect of holes in germanium.</p>
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<p>X-ray topogram of the surface of a germanium single crystal after exposure to a CO<sub>2</sub> laser pulse. Peak power density at 20 MW/cm<sup>2</sup> (internal stress fields around emerging structural defects are clearly visible). Reprinted with permission from Ref. [<a href="#B5-crystals-14-00796" class="html-bibr">5</a>]. 2015, Rogalin V.E.</p>
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<p>Transmission coefficient of Ge (ρ = 20 Ohm·cm) with thickness h = 1 mm depending on the incident energy density of HF and DF lasers.</p>
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<p>Dependence of the concentration of nonequilibrium free carriers generated in the process of two-photon absorption on the depth (calculated at the time: t~200 ns).</p>
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<p>Characteristics of a photodetector based on the photon drag effect of holes in germanium: (<b>a</b>) volt-watt characteristic of the photodetector; (<b>b</b>) dependence of the output signal of the photodetector on the resistance. Reprinted with permission from Ref. [<a href="#B5-crystals-14-00796" class="html-bibr">5</a>]. 2015, Rogalin V.E.</p>
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<p>Time series of microwave signals measured at the detector receiver with the laser switched off (1) and laser irradiation (2) of the surface of a single-crystal germanium plate with an incident radiation power of the laser diode P<sub>las</sub> = 2.64 W. Vertical scale: 2 mV/div; time scale: 500 μs/div. Reprinted with permission from Ref. [<a href="#B99-crystals-14-00796" class="html-bibr">99</a>]. 2019, Pleiades Publishing, Ltd.</p>
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<p>SEM images of the {111} surface of dislocation Ge after exposure to scanning nanosecond radiation of a UV laser with an energy density of E = 1.14 J/cm<sup>2</sup>: magnification—×1000. Reprinted with permission from Ref. [<a href="#B101-crystals-14-00796" class="html-bibr">101</a>]. 2023, Pleiades Publishing, Ltd.</p>
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<p>Optical transmission of a Ge single crystal doped with antimony. 1—undoped Ge (thickness 1 mm); 2—undoped Ge; ρ: 3—46 Ohm·cm; 4—20 Ohm·cm; 5—5 Ohm·cm; 6—2.7 Ohm·cm (spectra 2–6 were obtained on samples h = 10 mm). Reprinted with permission from Ref. [<a href="#B12-crystals-14-00796" class="html-bibr">12</a>]. 2019, Pleiades Publishing, Ltd.</p>
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15 pages, 7017 KiB  
Article
Generation of Millimeter Waves and Sub-Terahertz Waves Using a Two-Wavelength Tunable Laser for a Terahertz Wave Transceiver
by Yuga Tomimura, Akira Satou and Tomohiro Kita
Photonics 2024, 11(9), 811; https://doi.org/10.3390/photonics11090811 - 29 Aug 2024
Viewed by 564
Abstract
As global internet traffic continues to increase, technologies for generating high-frequency signals, such as sub-terahertz (sub-THz) bands, through photonics are gaining attention. In this study, we demonstrate the generation of millimeter waves at approximately 17 GHz and sub-THz waves at approximately 300 GHz [...] Read more.
As global internet traffic continues to increase, technologies for generating high-frequency signals, such as sub-terahertz (sub-THz) bands, through photonics are gaining attention. In this study, we demonstrate the generation of millimeter waves at approximately 17 GHz and sub-THz waves at approximately 300 GHz by converting the frequency difference of a two-wavelength tunable laser, fabricated using silicon photonics, into an optical–electrical signal. This device is expected to be used as a compact and low power consumption, two-wavelength tunable light source for THz wave transceivers. Full article
(This article belongs to the Special Issue Recent Advancements in Tunable Laser Technology)
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Figure 1
<p>Model of RF wave generation by two-wavelength tunable laser.</p>
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<p>Structure of TWTL.</p>
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<p>Structure of ring resonator. (<b>a</b>) Schematic of the entire ring resonator (<b>b</b>) Enlarged view of the coupling section.</p>
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<p>Transmittance of ring resonator.</p>
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<p>Structure of DBR.</p>
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<p>Superposition of DBR reflectivity and ring resonator transmittance (theory).</p>
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<p>Structure of MZI.</p>
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<p>Reflectance and transmittance of the MZI, with a phase shift due to manufacturing errors of 35°.</p>
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<p>Tunable two-wavelength characteristics of TWTL.</p>
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<p>Wavelength shift due to applied power of Ring 1.</p>
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<p>Superposition of DBR reflectivity and wavelength tunable characteristics of TWTL.</p>
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<p>Reflectivity dependence of each output (SOA injection current: 70 mA).</p>
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<p>L–I Curve at 98% reflectivity.</p>
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<p>Millimeter wave measurement system.</p>
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<p>Millimeter wave generation by the TWTL. (<b>a</b>) Two-wavelength optical spectrum; wavelength difference: 0.13 nm, frequency difference: 16.44 GHz. (<b>b</b>) Millimeter wave; frequency: 16.20 GHz, linewidth: 2.7 MHz. (<b>c</b>) Two-wavelength optical spectrum; wavelength difference: 0.14 nm, frequency difference: 17.72 GHz. (<b>d</b>) Millimeter wave; frequency: 19.02 GHz, linewidth: 420 kHz.</p>
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<p>(<b>a</b>) Relationship between reflectance and optical output intensity. (<b>b</b>) Relationship between optical output intensity and millimeter wave linewidth.</p>
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<p>Sub-THz wave measurement system.</p>
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<p>Sub-THz wave generation. (<b>a</b>) Two-wavelength optical spectrum; SOA injection current: 132.66 mA, wavelength difference: 2.36 nm, frequency difference: 297.64 GHz, output power: 4.53 mW. (<b>b</b>) Sub-THz wave; frequency: 298.54 GHz, linewidth: 6.5 MHz.</p>
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<p>Sub-THz Wave tuning. (<b>a</b>) Tuning characteristics. (<b>b</b>) Relationship between ring heater power and frequency shift.</p>
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12 pages, 3720 KiB  
Article
Terahertz Meta-Mirror with Scalable Reflective Passband by Decoupling of Cascaded Metasurfaces
by Zhihua Fan, Boyu Li, Shaolin Zhou and Gang Huang
Photonics 2024, 11(9), 796; https://doi.org/10.3390/photonics11090796 - 27 Aug 2024
Viewed by 355
Abstract
Electromagnetic metasurfaces have been playing exotic roles in the construction of ultracompact and versatile metadevices for wave–matter interactions. So far, multiple metasurfaces cascaded with intercouplings have been intensively investigated for extraordinary wavefront control and broadband spectral regulations. However, most cases face high structural [...] Read more.
Electromagnetic metasurfaces have been playing exotic roles in the construction of ultracompact and versatile metadevices for wave–matter interactions. So far, multiple metasurfaces cascaded with intercouplings have been intensively investigated for extraordinary wavefront control and broadband spectral regulations. However, most cases face high structural complexity and little attention is paid to cascaded metasurfaces without interlayer couplings. In this paper, we demonstrate one type of terahertz Bragg mirror with ideally high reflectivity and ultra-broad bandwidth by simply resorting to decoupled metasurfaces. Cascaded metasurfaces with decoupled mode control prove practically straightforward for analytical design and easy to fabricate for engineering purpose in our scheme. Essentially, by flexibly tuning the decoupled metasurface mode, the middle Fabry–Perot mode that behaves like a defect mode inside the reflective passband can be eliminated for substantial band expanding. Fundamental analyses and rigorous calculations are performed to confirm the feasibility of our metasurface-based THz Bragg mirror with scalable bandgap. In comparison, our meta-mirror provides superior spectral performance of a larger bandgap and higher in-band reflectivity over that composed by ten layers of alternate dielectrics (Rogers 3003 and 3005). Finally, our analytical methodology and numerical results provide a promising way for the rapid design and fabrication of a Bragg mirror in the optical regime. Full article
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<p>(<b>a</b>) Schematic of the proposed THz meta-mirror composed of two metasurfaces cascaded in parallel and (<b>b</b>) the periodic metal (Cu) ring unit that constitutes the metasurface.</p>
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<p>The lump equivalent circuit of (<b>a</b>) a single layer of metasurface with (<b>b</b>) a low-Q resonance mode in its reflective spectrum and (<b>c</b>) that of two cascaded metasurfaces sandwiched by a thick spacer for independent and decoupled resonant modes.</p>
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<p>(<b>a</b>) The transmission spectra of two identical metasurfaces cascaded in parallel with the parameters of <span class="html-italic">P</span> = 144 μm, <span class="html-italic">D</span> = 120 μm and <span class="html-italic">g</span> = 8 μm and sandwiched by a Rogers 3003 spacer with a varied thickness (<span class="html-italic">t</span>) of 40 μm, 80 μm and 160 μm in comparison with that of only one metasurface; (<b>b</b>) the coupling factor (<span class="html-italic">k</span>) numerically extracted for varied spacer thickness (<span class="html-italic">t</span>).</p>
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<p>The transmission spectra of two identical metasurfaces cascaded in parallel with the parameters of <span class="html-italic">P</span> = 144 μm, <span class="html-italic">g</span> = 8 μm, <span class="html-italic">t</span> = 80 μm, and the varied lengths of <span class="html-italic">D</span> = 110 μm, 120 μm and 130 μm.</p>
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<p>Transmission spectra of two identical metasurfaces cascaded in parallel with the parameters of <span class="html-italic">P</span> = 160 μm, <span class="html-italic">t</span> = 127 μm and <span class="html-italic">D</span> = 130 μm, and the varied widths of <span class="html-italic">g</span> = 8 μm, 12 μm, 16 μm and 20 μm.</p>
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<p>The transmission spectra of two identical metasurfaces cascaded in parallel with the parameters of <span class="html-italic">D</span> = 130 μm, <span class="html-italic">g</span> = 8 μm and <span class="html-italic">t</span> = 127 μm and varied periods of <span class="html-italic">P =</span> 140 μm, 160 μm and 180 μm.</p>
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<p>The reflection spectra of two identical metasurfaces cascaded in parallel with the parameters of <span class="html-italic">P</span> = 140 μm, <span class="html-italic">g</span> = 8 μm and <span class="html-italic">t</span> = 127 μm, and varied lengths of <span class="html-italic">D</span> = 105 μm, 110 μm, 115 μm and 120 μm.</p>
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<p>The reflection spectra (or the scattering parameters of <span class="html-italic">S</span><sub>11</sub>) of two decoupled metasurfaces cascaded in parallel with the parameters of <span class="html-italic">P</span> = 140 μm, <span class="html-italic">g</span> = 8 μm and <span class="html-italic">D</span> = 105 μm and sandwiched by spacer with the varied thicknesses of <span class="html-italic">t</span> = 127 μm, 254 μm and 381 μm.</p>
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<p>The reflective spectra of meta-mirrors configured by two decoupled metasurfaces that are sandwiched by a dielectric spacer in comparison with the spectrum of a Bragg mirror composed of 10 layers or 5 pairs of Rogers 3003 and 3006. For clear analyses, critical points (<span class="html-italic">P</span><sub>1</sub>~<span class="html-italic">P</span><sub>6</sub>) are marked.</p>
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30 pages, 13972 KiB  
Article
Meta Surface-Based Multiband MIMO Antenna for UAV Communications at mm-Wave and Sub-THz Bands
by Tale Saeidi, Sahar Saleh, Nick Timmons, Ahmed Jamal Abdullah Al-Gburi, Saeid Karamzadeh, Ayman A. Althuwayb, Nasr Rashid, Khaled Kaaniche, Ahmed Ben Atitallah and Osama I. Elhamrawy
Drones 2024, 8(8), 403; https://doi.org/10.3390/drones8080403 - 16 Aug 2024
Viewed by 964
Abstract
Unmanned aerial vehicles (UAVs) need high data rate connectivity, which is achievable through mm-waves and sub-THz bands. The proposed two-port leaky wave MIMO antenna, employing a coplanar proximity technique that combines capacitive and inductive loading, addresses this need. Featuring mesh-like slots and a [...] Read more.
Unmanned aerial vehicles (UAVs) need high data rate connectivity, which is achievable through mm-waves and sub-THz bands. The proposed two-port leaky wave MIMO antenna, employing a coplanar proximity technique that combines capacitive and inductive loading, addresses this need. Featuring mesh-like slots and a vertical slot to mitigate open-stopband (OSB) issues, the antenna radiates broadside and bidirectionally. H-shaped slots on a strip enhance port isolation, and a coffee bean metasurface (MTS) boosts radiation efficiency and gain. Simulations and experiments considering various realistic scenarios, each at varying vertical and horizontal distances, show steered beam patterns, circular polarization (CP), and high-gain properties, with a maximum gain of 13.8 dBi, an axial ratio (AR) <2.9, a diversity gain (DG) >9.98 dB, and an envelope correlation coefficient (ECC) <0.003. This design supports drones-to-ground (D2G), drone-to-drone (D2D), and drone-to-satellite (D2S) communications. Full article
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Figure 1
<p>Asymmetry radiation principle: (<b>a</b>) TE<sub>10</sub> mode in even structure; (<b>b</b>) leaky TE<sub>10</sub> mode in the uneven structure; (<b>c</b>) leaky TE<sub>01</sub> mode in even structure (θ is the approximated maximum angle of the radiation and the red arrows show the direction of the field) [<a href="#B36-drones-08-00403" class="html-bibr">36</a>].</p>
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<p>The design configuration of the single antenna and MIMO, including each step of the design and the proposed prototype ((<b>a</b>) step 1, (<b>b</b>) step 2, (<b>c</b>) step 3, (<b>d</b>) proposed, (<b>e</b>) front view of the MIMO, and (<b>f</b>) ground view of the MIMO).</p>
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<p>Coupling mechanisms of coplanar proximity feed ((<b>a</b>) inductive coupling and (<b>b</b>) capacitive coupling).</p>
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<p>The surface current mechanism of the proposed antenna (the blue and red lines are the current and voltage standing wave amplitude, respectively).</p>
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<p>The surface current distribution of the initial design of the antenna at (<b>a</b>) 8.5 GHz, (<b>b</b>) 25 GHz, and (<b>c</b>) 120 GHz.</p>
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<p>The surface current distribution at (<b>a</b>) 8.5 GHz, (<b>b</b>) 25 GHz, and (<b>c</b>) 120 GHz.</p>
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<p>Parametric study of the single element antenna: reflection coefficient results of (<b>a</b>) <span class="html-italic">L<sub>f</sub></span>, (<b>b</b>) <span class="html-italic">L<sub>p</sub></span>, (<b>c</b>) <span class="html-italic">L<sub>g</sub></span>, <span class="html-italic">W<sub>g</sub></span>, and (<b>d</b>) <span class="html-italic">W<sub>p</sub></span>.</p>
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<p>Reflection coefficient results of the proposed single-port antenna for each stage.</p>
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<p>S-parameters results of the MIMO antenna without the neutralization tape and metasurface elements.</p>
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<p>A perspective view of the MIMO antenna showcasing each layer and their materials.</p>
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<p>The electric field of the proposed two ports MIMO antenna at different frequencies (<b>a</b>) 8.5 GHz, (<b>b</b>) 25 GHz, (<b>c</b>) 75 GHz, (<b>d</b>) 115 GHz, and (<b>e</b>) 120 GHz.</p>
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<p>The single-element coffee bean metasurface’s characteristics: (<b>a</b>) S-parameters results; (<b>b</b>,<b>c</b>) permittivity and permeability results; (<b>d</b>) single element of the coffee bean.</p>
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<p>Simulation setup of the proposed antenna: (<b>a</b>) beneath view, (<b>b</b>) upper view, (<b>c</b>) two arrays of the proposed antenna on one drone, (<b>d</b>) two drones and antenna systems with vertical space, and (<b>e</b>) two drones and antenna systems with horizontal space.</p>
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<p>The measurement setup of the proposed antenna in the air at microwave (up to 10 GHz) and mm-wave (up to 30 GHz) bands: (<b>a</b>) without a drone and (<b>b</b>) with a drone.</p>
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<p>The measurement and calibration setup of the antenna in the air at the sub-THz band (77–140 GHz).</p>
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<p>Simulated and measured S-parameter results of the proposed antenna after integrating with metasurface in air and attached to a drone: (<b>a</b>) transmission coefficient and (<b>b</b>) reflection coefficient.</p>
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<p>Reflection and transmission coefficient results when two arrays of the antenna are attached to one drone.</p>
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<p>Transmission coefficients results of the antenna on two drones with different (<b>a</b>) vertical and (<b>b</b>) horizontal distances.</p>
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<p>Radiation pattern measurement of the antenna in the mm-wave chamber.</p>
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<p>The simulated and measured electric and magnetic field of the antenna in free space at (<b>a</b>) 8.5 GHz, (<b>b</b>) 18 GHz, (<b>c</b>) 25 GHz, (<b>d</b>) 66 GHz, and (<b>e</b>) 77 GHz.</p>
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<p>Beam steering of the proposed antenna at (<b>a</b>) 8.5 GHz, (<b>b</b>) 10 GHz, (<b>c</b>) 18 GHz, (<b>d</b>) 25 GHz, (<b>e</b>) 45 GHz, (<b>f</b>) 66 GHz, (<b>g</b>) 77 GHz, and (<b>h</b>) 120 GHz.</p>
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<p>Simulated and measured gain (G), radiation efficiency (eff), and axial ratio (AR) of the proposed antenna over frequencies in free space.</p>
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<p>Diversity gain (DG) and envelope correlation coefficient (ECC) results of MIMO antenna.</p>
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<p>Antenna’s estimated 3D radiation patterns on a commercial drone at (<b>a</b>) 8.5 GHz, (<b>b</b>) 10 GHz, (<b>c</b>) 18 GHz, (<b>d</b>) 25 GHz, (<b>e</b>) 45 GHz, (<b>f</b>) 66 GHz, (<b>g</b>) 77 GHz, and (<b>h</b>) 120 GHz.</p>
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<p>The simulated radiation pattern of the antenna when it is integrated with the drone at (<b>a</b>) 8.5 GHz, (<b>b</b>) 10 GHz, (<b>c</b>) 18 GHz, (<b>d</b>) 25 GHz, (<b>e</b>) 45 GHz, (<b>f</b>) 66 GHz, (<b>g</b>) 77 GHz, and (<b>h</b>) 120 GHz.</p>
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<p>The proposed antenna integrated with the drone: (<b>a</b>) power receiver probe around the transmitter drone in vertical and horizontal spaces, (<b>b</b>) overview of the simulated field test, and (<b>c</b>) horizontal assessment of the transmission and receiving power.</p>
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<p>The simulated air-to-ground and drone-to-drone transmission at different distances, azimuth, and elevation profiles (<b>a</b>) Co-polarization and (<b>b</b>) Cross-polarization.</p>
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13 pages, 4201 KiB  
Article
Design Optimization of a THz Receiver Based on 60 nm Complementary Metal–Oxide–Semiconductor Technology
by Fabrizio Palma, Demetrio Logoteta, Francesco Centurelli, Pascal Chevalier, Renato Cicchetti, Frederic Monsieur, Carlo Santini, Orlandino Testa, Alessandro Trifiletti and Antonio d’Alessandro
Electronics 2024, 13(16), 3122; https://doi.org/10.3390/electronics13163122 - 7 Aug 2024
Viewed by 775
Abstract
The technology transfer of terahertz wireless communication from research laboratories to commercial applications is a global strategic achievement currently pursued to match the ever-increasing demand for high-speed communication. The use of commercial integrated electronics for the detection of THz waves is an intriguing [...] Read more.
The technology transfer of terahertz wireless communication from research laboratories to commercial applications is a global strategic achievement currently pursued to match the ever-increasing demand for high-speed communication. The use of commercial integrated electronics for the detection of THz waves is an intriguing challenge which has enticed great interest in the scientific research community. Rapid progress in this field has led to the exploitation of THz direct detection using standard CMOS technology based on the so-called self-mixing effect. Our research, stemming out of a collaboration between Sapienza University of Rome and STMicroelectronics company, is focused on the complete design process of a THz rectifier, realized using 50 nm ST B55 CMOS technology. In this paper, we report the optimization process of a case-study receiver, aimed to demonstrate the feasibility of direct demodulation of the transmitted OOK signal. A relatively limited bandwidth extension is considered since the device will be included in a system adopting a radiation source with a limited band. The design refers to a specific technology, the 60 nm MOS in B55X ST; nevertheless, the proposed optimization procedure can be applied in principle to any MOS device. Several aspects of the rectification process and of the receiver design are investigated by combining different numerical simulation methodologies. The direct representation of the rectification effect through the equivalent circuit of the detector is provided, which allows for the investigation of the detector–amplifier coupling, and the computation of output noise equivalent power. Numerical results are presented and used as the basis for the optimization of the receiver parameters. Full article
(This article belongs to the Special Issue Advanced Topics in Modelling Microwave and mmWave Electron Devices)
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<p>(<b>a</b>) Two-dimensional color map of the simulated zeroth-order harmonic component of the electrostatic potential in a ST B55 Technology NGH MOS induced by a <math display="inline"><semantics> <mrow> <mn>0.7</mn> </mrow> </semantics></math> THz signal of nominal amplitude <math display="inline"><semantics> <mrow> <mn>100</mn> <mo> </mo> <mi mathvariant="normal">m</mi> <mi mathvariant="normal">V</mi> <mo>,</mo> </mrow> </semantics></math> applied between source and gate. The source and gate-source bias are <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>S</mi> </mrow> </msub> <mo>=</mo> <mn>0.5</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>G</mi> </mrow> </msub> <mo>=</mo> <mn>0.6</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>, respectively. (<b>b</b>) Two-dimensional color map of the simulated 2nd-order harmonic response of the electrostatic potential.</p>
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<p>Two-dimensional map of the self-mixing rectified potential for the same structure and physical parameters as in <a href="#electronics-13-03122-f001" class="html-fig">Figure 1</a>. The three maps refer to different values of gate-source bias <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>G</mi> </mrow> </msub> </mrow> </semantics></math>: <math display="inline"><semantics> <mrow> <mn>0.5</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math> (<b>a</b>), <math display="inline"><semantics> <mrow> <mn>0.6</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math> (<b>b</b>), <math display="inline"><semantics> <mrow> <mn>0.7</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math> (<b>c</b>). The increase in the magnitude of the potential between channel and drain is due to the different penetration of THz electric field toward the substrate depletion barrier. The penetration of the THz potential toward the substrate reduces at higher gate voltages (panel (<b>c</b>)) due to the screening by the channel charge.</p>
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<p>(<b>a</b>) Two-dimensional color map of the self-mixing-induced variation of electron density (red color: increase; blue color: decrease). (<b>b</b>) Two-dimensional color map of the self-mixing variation in hole density for the same structure and physical parameters as in <a href="#electronics-13-03122-f001" class="html-fig">Figure 1</a> and <a href="#electronics-13-03122-f002" class="html-fig">Figure 2</a>.</p>
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<p>(<b>a</b>) Three-dimensional representation of the receiver providing a depiction of the antenna terminals connected to the source and gate contacts of the MOS rectifier. The drain contact of the detector is connected to the gate of the first transistor of the LNA. The width <math display="inline"><semantics> <mrow> <mi>H</mi> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>W</mi> </mrow> </semantics></math> of the gates, respectively, of the TR and of the LNA input transistor are highlighted. (<b>b</b>) Receiver circuit diagram. The parasitic capacitance at the LNA input is highlighted.</p>
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<p>(<b>a</b>) Thevenin equivalent circuit or the rectifier highlighting the dependence from parameter <math display="inline"><semantics> <mrow> <mi>W</mi> </mrow> </semantics></math> of the parasitic capacitance <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>C</mi> </mrow> <mrow> <mi>G</mi> <mi>S</mi> <mo>_</mo> <mi>L</mi> <mi>N</mi> <mi>A</mi> </mrow> </msub> </mrow> </semantics></math> of the LNA input transistor; (<b>b</b>) Norton equivalent current sources of the LNA, highlighting the functional dependence on <math display="inline"><semantics> <mrow> <mi>W</mi> </mrow> </semantics></math> of the LNA signal, of the transconductance <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>g</mi> </mrow> <mrow> <mi>m</mi> <mo>_</mo> <mi>L</mi> <mi>N</mi> <mi>A</mi> </mrow> </msub> </mrow> </semantics></math>, and the functional dependence <math display="inline"><semantics> <mrow> <msqrt> <mi>W</mi> </msqrt> </mrow> </semantics></math> of the equivalent noise current source <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>i</mi> </mrow> <mrow> <mi>n</mi> <mi>d</mi> </mrow> </msub> </mrow> </semantics></math>.</p>
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<p>Equivalent antenna parameters vs. frequency. Real (black) and imaginary (blue) parts of the antenna input impedance and (red dashed) antenna effective height. The circle indicates the optimum working point.</p>
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<p>Simulated resistance (<b>a</b>) and reactance (<b>b</b>) of the MOS receiver versus values of its gate–source bias, <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>G</mi> <mo>_</mo> <mi>T</mi> <mi>R</mi> </mrow> </msub> </mrow> </semantics></math>, for two different values of the receiver source bias, <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>S</mi> <mo>_</mo> <mi>T</mi> <mi>R</mi> </mrow> </msub> <mo>=</mo> <mn>0.5</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>S</mi> <mo>_</mo> <mi>T</mi> <mi>R</mi> </mrow> </msub> <mo>=</mo> <mn>0.8</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>. Simulations refer to the high-frequency response of the receiver to a <math display="inline"><semantics> <mrow> <mn>0.7</mn> </mrow> </semantics></math> THz.</p>
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<p>Rectifier output voltage <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>o</mi> <mi>u</mi> <mi>t</mi> <mo>_</mo> <mi>T</mi> <mi>R</mi> </mrow> </msub> </mrow> </semantics></math> (<b>a</b>) and output resistance <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>R</mi> </mrow> <mrow> <mi>o</mi> <mi>u</mi> <mi>t</mi> <mo>_</mo> <mi>T</mi> <mi>R</mi> </mrow> </msub> </mrow> </semantics></math>. (<b>b</b>) <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>G</mi> <mo>_</mo> <mi>T</mi> <mi>R</mi> </mrow> </msub> </mrow> </semantics></math> for two different values of <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>S</mi> <mo>_</mo> <mi>T</mi> <mi>R</mi> </mrow> </msub> </mrow> </semantics></math>.</p>
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<p>(<b>a</b>) LNA transconductance <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>g</mi> </mrow> <mrow> <mi>m</mi> <mo>_</mo> <mi>L</mi> <mi>N</mi> <mi>A</mi> </mrow> </msub> </mrow> </semantics></math> versus the LNA gate-source bias <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>G</mi> <mi>S</mi> <mo>_</mo> <mi>L</mi> <mi>N</mi> <mi>A</mi> </mrow> </msub> </mrow> </semantics></math> for different values of the LNA drain-source bias <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>D</mi> <mi>S</mi> <mo>_</mo> <mi>L</mi> <mi>N</mi> <mi>A</mi> </mrow> </msub> </mrow> </semantics></math>. (<b>b</b>) LNA output noise spectral density versus the signal frequency. The noise corner frequency of <math display="inline"><semantics> <mrow> <mn>45</mn> <mo> </mo> <mi mathvariant="normal">M</mi> <mi mathvariant="normal">H</mi> <mi mathvariant="normal">z</mi> </mrow> </semantics></math> is noticeable.</p>
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<p>Minimum power density of a plane wave impinging on the structure vs. frequency for different values of the parameter <span class="html-italic">H</span>.</p>
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11 pages, 7525 KiB  
Communication
Graphene-Based Tunable Polarization Conversion Metasurface for Array Antenna Radar Cross-Section Reduction
by Yang’an Zhang, Yuxi Li, Yao Li, Xueguang Yuan, Xin Yan and Xia Zhang
Sensors 2024, 24(15), 5044; https://doi.org/10.3390/s24155044 - 4 Aug 2024
Viewed by 606
Abstract
A graphene-based tunable polarization conversion metasurface (PCM) was designed and analyzed for the purpose of reducing the radar cross-section (RCS) of array antennas. The metasurface comprises periodic shuttle-shaped metal patches, square-patterned graphene, and inclined grating-patterned graphene. By adjusting the Fermi energy levels of [...] Read more.
A graphene-based tunable polarization conversion metasurface (PCM) was designed and analyzed for the purpose of reducing the radar cross-section (RCS) of array antennas. The metasurface comprises periodic shuttle-shaped metal patches, square-patterned graphene, and inclined grating-patterned graphene. By adjusting the Fermi energy levels of the upper (μ1) and lower (μ2) graphene layers, different states were achieved. In State 1, with μ1 = 0 eV and μ2 = 0.5 eV, the polarization conversion ratio (PCR) exceeded 0.9 in the bandwidths of 1.65–2.19 THz and 2.29–2.45 THz. In State 2, with μ1 = μ2 = 0.5 eV, the PCR was greater than 0.9 in the 1.23–1.85 THz and 2.24–2.60 THz bands. In State 3, with μ1 = μ2 = 1 eV, the PCR exceeded 0.9 in the 2.56–2.75 THz and 3.73–4.05 THz bands. By integrating the PCM with the array antenna, tunable RCS reduction was obtained without affecting the basic radiation functionality of the antenna. In State 1, RCS reduction was greater than 10 dB in the 1.60–2.43 THz and 3.63–3.72 THz frequency ranges. In State 2, the RCS reduction exceeded 10 dB in the 2.07–2.53 THz, 2.78–2.98 THz, and 3.70–3.81 THz bands. In State 3, RCS reduction was greater than 10 dB in the 1.32–1.43 THz, 2.51–2.76 THz, and 3.76–4.13 THz frequency ranges. This polarization conversion metasurface shows significant potential for applications in switchable and tunable antenna RCS reduction. Full article
(This article belongs to the Section Sensor Materials)
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<p>Specific structure of the polarization conversion unit. (<b>a</b>) Oriental view. (<b>b</b>) Top view. (<b>c</b>) Side view. (<b>d</b>) Inclined grating structure of the graphene layer.</p>
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<p>The polarization conversion ratio of the PCM unit at (<b>a</b>) <span class="html-italic">μ</span><sub>1</sub> = 0 eV, (<b>c</b>) <span class="html-italic">μ</span><sub>1</sub> = 0.5 eV, and (<b>e</b>) <span class="html-italic">μ</span><sub>1</sub> = 1 eV. The |<span class="html-italic">r</span><sub>yy</sub>| and |<span class="html-italic">r</span><sub>xy</sub>| amplitude of the PCM unit at (<b>b</b>) State 1 (<span class="html-italic">μ</span><sub>1</sub> = 0 eV, <span class="html-italic">μ</span><sub>2</sub> = 0.5 eV), (<b>d</b>) State 2 (<span class="html-italic">μ</span><sub>1</sub> = <span class="html-italic">μ</span><sub>2</sub> = 0.5 eV), and (<b>f</b>) State 3 (<span class="html-italic">μ</span><sub>1</sub> = <span class="html-italic">μ</span><sub>2</sub> = 1 eV).</p>
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<p>Surface current distribution on the top and bottom layers. The current directions in each layer are indicated by black arrows. (<b>a</b>,<b>b</b>) State 1 at 2 THz, (<b>d</b>,<b>e</b>) State 2 at 2.5 THz, and (<b>g</b>,<b>h</b>) State 3 at 2.7 THz. Equivalent electromagnetic moments of the incident and reflected waves at (<b>c</b>) 2 THz (State 1), (<b>f</b>) 2.5 THz (State 2), and (<b>i</b>) 2.7 THz (State 3).</p>
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<p>Electric field distribution at (<b>a</b>) 2 THz (State 1), (<b>b</b>) 2.5 THz (State 2), and (<b>c</b>) 2.7 THz (State 3).</p>
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<p>Schematic diagram of the overall structure.</p>
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<p>Comparison of the performance between the array antenna with and without PCM. (<b>a</b>) Reflection coefficient S<sub>11</sub>. The 3D radiation pattern at 1.63 THz for (<b>b</b>) State 1, (<b>e</b>) State 2, and (<b>h</b>) State 3. The 3D radiation pattern at 1.93 THz for (<b>c</b>) State 1, (<b>f</b>) State 2, and (<b>i</b>) State 3. The 3D radiation pattern at 2.30 THz for (<b>d</b>) State 1, (<b>g</b>) State 2, and (<b>j</b>) State 3.</p>
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<p>(<b>a</b>) Comparison of the monostatic RCS between the array antenna with and without PCM. (<b>b</b>) The RCS reduction.</p>
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16 pages, 6683 KiB  
Article
Synthesis and Characterization of Carboxymethylcellulose-Functionalized Magnetite Nanoparticles as Contrast Agents for THz Spectroscopy with Applications in Oncology
by Oliver Daniel Schreiner, Petrisor Samoila, Thomas Gabriel Schreiner, Diana Socotar and Romeo Cristian Ciobanu
Crystals 2024, 14(8), 696; https://doi.org/10.3390/cryst14080696 - 30 Jul 2024
Viewed by 602
Abstract
This paper describes a process to obtain magnetite functionalized with carboxymethylcellulose via coprecipitation by means of a preliminary stabilization of magnetite in citric acid. The magnetite assemblies successfully passed in vitro and in vivo tests of bio-compatibility. The measured values for the dielectric [...] Read more.
This paper describes a process to obtain magnetite functionalized with carboxymethylcellulose via coprecipitation by means of a preliminary stabilization of magnetite in citric acid. The magnetite assemblies successfully passed in vitro and in vivo tests of bio-compatibility. The measured values for the dielectric loss factor are remarkably high, a prerequisite for the assemblies’ potential use as contrast agents. Broadband THz spectroscopy analysis was performed to identify the most relevant frequency bands (here, 3.2–4 THz) where the signal difference between normal cells and cancer cells is relevant for the particles’ potential use as contrast agents for THz imaging, with applications in oncology. Full article
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<p>Experimental assembly for the synthesis of magnetite.</p>
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<p>X-ray diffractogram recorded for magnetite/Fe<sub>3</sub>O<sub>4.</sub></p>
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<p>(<b>a</b>) TEM micrograph of magnetite; (<b>b</b>) size distribution of magnetite particles.</p>
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<p>(<b>a</b>) TEM micrograph of magnetite stabilized in citric acid; (<b>b</b>) size distribution of magnetite particles stabilized in citric acid.</p>
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<p>(<b>a</b>) TEM micrograph of magnetite functionalized with carboxymethylcellulose; (<b>b</b>) size distribution of magnetite particles functionalized with carboxymethylcellulose.</p>
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<p>Morphology of cells treated with nanoparticles (diluted 1:5 in DMEM).</p>
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<p>Normal and tumor cells’ survival and viability.</p>
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<p>Dielectric permittivity analysis for magnetite assemblies.</p>
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<p>Dielectric loss factor analysis for magnetite assemblies.</p>
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<p>Operational stages of spectroscopy in the THz field.</p>
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<p>Absorption characteristics of tumor cells and normal cells.</p>
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<p>Absorption characteristics of normal cells and normal cells with nanoparticles.</p>
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<p>Absorption characteristics of tumor cells and tumor cells with nanoparticles.</p>
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<p>Absorption characteristics of normal cells with nanoparticles and tumor cells with nanoparticles.</p>
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<p>Signal difference between tumor cells and normal cells, without nanoparticle addition.</p>
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<p>Signal difference between tumor cells and normal cells, with nanoparticle addition.</p>
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11 pages, 7143 KiB  
Article
A Broadband Meta-Absorber for Curved Terahertz Stealth Applications
by Saima Hafeez, Jianguo Yu, Fahim Aziz Umrani, Abdul Majeed and Wang Yun
Electronics 2024, 13(15), 2966; https://doi.org/10.3390/electronics13152966 - 27 Jul 2024
Viewed by 540
Abstract
Metasurface absorbers have shown significant potential in stealth applications due to their adaptability and capacity to reduce the backscattering of electromagnetic (EM) waves. Nevertheless, due to the materials used in the terahertz (THz) range, simultaneously achieving excellent stealth performance in ultrawideband remains an [...] Read more.
Metasurface absorbers have shown significant potential in stealth applications due to their adaptability and capacity to reduce the backscattering of electromagnetic (EM) waves. Nevertheless, due to the materials used in the terahertz (THz) range, simultaneously achieving excellent stealth performance in ultrawideband remains an important and difficult challenge to overcome. In this study, an ultrawideband absorber is proposed based on indium tin oxide (ITO) and polyethylene-terephthalate (PET), with a structure thickness of only 0.16λ. ITO sheets are utilized to achieve broad-spectrum, optical transparency and flexibility of the metasurface. The results show that absorption higher than 90% can be achieved in the frequency band ranging from 1.75 to 5 THz under normal TE and TM polarizations, which covers a wide THz band. The structure is insensitive to polarization angles and exhibits 97% relative bandwidth above 90% efficiency up to an oblique incident angle of 60°. To further validate the efficiency of the absorption performance, the radar cross-section (RCS) reduction investigation was performed on both planar and conformal configurations. The findings show that under normal incidence EM waves, both flat and curved surfaces can achieve RCS reduction of over 10 dB, covering an extremely wide frequency range of 1.75 to 5 THz. The metasurface presented in this study exhibits significant potential for use in several THz applications, including flexible electronic devices and stealth aircraft windows. Full article
(This article belongs to the Section Microwave and Wireless Communications)
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<p>(<b>a</b>) Schematics of a proposed absorber and its meta-atom configuration. (<b>b</b>–<b>d</b>) Design evaluation of a meta-atom.</p>
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<p>(<b>a</b>) Absorption and reflection coefficient characteristics under TE and TM mode. (<b>b</b>) Results of reflection coefficient using CST and HFSS software. (<b>c</b>) Step−by−step design evaluation absorption.</p>
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<p>(<b>a</b>) Normalized impedance. Surface current distribution on (<b>b</b>) top and (<b>c</b>) bottom layer.</p>
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<p>(<b>a</b>) Schematic diagram of ECM in ADS; (<b>b</b>) the S−parameters from ADS and CST simulations.</p>
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<p>Effect on absorption spectrum by varying (<b>a</b>) <span class="html-italic">R</span>, (<b>b</b>) <span class="html-italic">h</span>, (<b>c</b>–<b>f</b>) <span class="html-italic">l</span>, <span class="html-italic">w</span>, <span class="html-italic">s</span>, and <span class="html-italic">g</span> of resistive ITO layer.</p>
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<p>Absorption spectra for (<b>a</b>) polarization angles and (<b>b</b>) oblique incident angles.</p>
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<p>Illustration of EM wave on planar and cylindrical surface.</p>
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<p>(<b>a</b>) Monostatic RCS of the copper plate and planar OTFM. (<b>b</b>) RCS reduction in OTFM for flat and curved structures.</p>
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15 pages, 5972 KiB  
Article
Design and Numerical Modeling of Terahertz Metasurface with Dual Functions of Sensing and Filtering
by Lu Zhang, Huayan Sun, Zhe Chen, Runfeng Tang, Jinxiao Yang and Weilin Li
Sensors 2024, 24(15), 4823; https://doi.org/10.3390/s24154823 - 25 Jul 2024
Viewed by 460
Abstract
This study proposes a dual-functional terahertz device based on the Dirac semimetal, serving as both a sensing element and a band-pass filter. The device’s operating mode can switch between these two functions by utilizing the phase transition property of vanadium dioxide (VO2 [...] Read more.
This study proposes a dual-functional terahertz device based on the Dirac semimetal, serving as both a sensing element and a band-pass filter. The device’s operating mode can switch between these two functions by utilizing the phase transition property of vanadium dioxide (VO2). When VO2 is in the insulating state, the device functions as a sensing element. The simulation results demonstrate an impressive refractive index sensitivity of 374.40 GHz/RIU (Refractive Index Unit). When VO2 is in the metallic state, the device functions as a band-pass filter, exhibiting a center frequency of 2.01 THz and a 3 dB fractional bandwidth of 0.91 THz. The integration of these dual functionalities within a single terahertz device enhances its utility in both sensing and filtering applications. Full article
(This article belongs to the Special Issue Terahertz Sensors)
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<p>A unit schematic illustration of the terahertz sensing element/filter. (<b>a</b>) Front view of the device unit; (<b>b</b>) top view of the device; (<b>c</b>) side view of the device.</p>
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<p>The variation in the relative dielectric constant of the DSM with Fermi energy level. (<b>a</b>) Real part; (<b>b</b>) imaginary part.</p>
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<p>The transmission spectrum of the device when VO<sub>2</sub> is in the insulating state.</p>
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<p>An equivalent model of the device when VO<sub>2</sub> is in the insulating state.</p>
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<p>The magnetic field distribution of the sensing element at 2.00 THz and the transmission dip at 2.59 THz. (<b>a</b>) 2.00 THz; (<b>b</b>) 2.59 THz.</p>
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<p>A schematic diagram of the sample covering the entire resonant structure (90 μm × 90 μm): (<b>a</b>) the front view; (<b>b</b>) the side view.</p>
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<p>The transmission spectra of the sensing element as <span class="html-italic">n</span> increase from 1 to 2.</p>
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<p>Frequency shift and fitting curves.</p>
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<p>The transmission spectra of the sensing element with the polarization angle <span class="html-italic">ϕ.</span></p>
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<p>The transmission spectrum of the device when VO<sub>2</sub> is in the metallic state.</p>
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<p>Electric field distribution in resonant layer. (<b>a</b>) <span class="html-italic">f</span><sub>1</sub>; (<b>b</b>) <span class="html-italic">f</span><sub>0</sub>; (<b>c</b>) <span class="html-italic">f</span><sub>2</sub>.</p>
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<p>The equivalent circuit model of the band-pass filter. (<b>a</b>) The top and bottom equivalent circuit, Where the yellow part represents the VO<sub>2</sub> structure in the metallic state; (<b>b</b>) the simplified circuit; (<b>c</b>) the complete equivalent circuit model.</p>
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<p>Transmission spectrum comparison.</p>
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<p>Effect of substrate thickness <span class="html-italic">T0</span> on transmission spectrum of device. (<b>a</b>) Sensing element; (<b>b</b>) band-pass filter.</p>
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22 pages, 4157 KiB  
Article
Characterization of Indium Tin Oxide (ITO) Thin Films towards Terahertz (THz) Functional Device Applications
by Anup Kumar Sahoo, Wei-Chen Au and Ci-Ling Pan
Coatings 2024, 14(7), 895; https://doi.org/10.3390/coatings14070895 - 17 Jul 2024
Viewed by 749
Abstract
In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium tin oxide (ITO) thin films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed [...] Read more.
In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium tin oxide (ITO) thin films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed ITO films annealed at 400 °C, 600 °C and 800 °C are determined in the frequency range of 0.2 to 1.0 THz. The transmittance can be changed from ~27% for as-deposited to ~10% and ~39% for ITO films heat-treated at different annealing temperatures (Ta’s). Such variations of optical properties in the far infrared for the samples under study are correlated with their mobility and carrier concentration, which are extracted from Drude–Smith modeling of THz conductivity with plasma frequency, scattering time and the c-parameters as fitting parameters. Resistivities of the films are in the range of 10−3 to 10−4 Ω-cm, confirming that annealed ITO films can potentially be used as transparent conducting electrodes for photonic devices operating at THz frequencies. The highest mobility, μ = 47 cm2/V∙s, with carrier concentration, Nc = 1.31 × 1021 cm−3, was observed for ITO films annealed at Ta = 600 °C. The scattering times of the samples were in the range of 8–21 fs, with c-values of −0.63 to −0.87, indicating strong backscattering of the carriers, mainly by grain boundaries in the polycrystalline film. To better understand the nature of these films, we have also characterized the surface morphology, microscopic structural properties and chemical composition of as-deposited and RTA-processed ITO thin films. For comparison, we have summarized the optical properties of ITO films sputtered onto fused silica substrates, as-deposited and RTA-annealed, in the visible transparency window of 400–800 nm. The optical bandgaps of the ITO thin films were evaluated with a Tauc plot from the absorption spectra. Full article
(This article belongs to the Special Issue Thermoelectric Thin Films for Thermal Energy Harvesting)
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<p>The SEM images of as-deposited ITO thin film with (<b>a</b>) top view (<b>b</b>) cross-sectional view, ITO thin film with RTA-treated at 400 °C with (<b>c</b>) top view (<b>d</b>) cross-sectional view (N/A), ITO thin film with RTA-treated at 600 °C with (<b>e</b>) top view (<b>f</b>) cross-sectional view and RTA-treated at 800 °C with (<b>g</b>) top and (<b>h</b>) cross-sectional view.</p>
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<p>The AFM surface topography images of thin films (<b>a</b>) as-deposited, (<b>b</b>) RTA-treated at 400 °C (<b>c</b>) RTA-treated at 800 °C and (<b>d</b>) RTA-treated at 800 °C ITO thin film. The surface with scaling of particle size of (<b>e</b>) as-deposited (<b>f</b>) RTA-treated at 400 °C, (<b>g</b>) RTA-treated at 600 °C and (<b>h</b>) RTA-treated at 800 °C ITO thin film.</p>
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<p>Element analysis of (<b>a</b>) as-deposited (<b>b</b>) RTA-treated at 600 °C and (<b>c</b>) RTA-treated at 800 °C ITO thin film.</p>
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<p>THz (<b>a</b>) temporal waveforms and (<b>b</b>) amplitude spectra transmitted through bare HR silicon, as-deposited, RTA-treated 400 °C, RTA-treated 600 °C and RTA-treated 800 °C ITO thin films. Inset in (<b>b</b>) shows phase linearity of the THz signal transmitted through a ITO/HR-Si annealed at 800 °C.</p>
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<p>(<b>a</b>) The real (<span class="html-italic">n</span>) and imaginary (<span class="html-italic">κ</span>) part of refractive indices of the substrate (HR-Si) (added an error bar for thickness variation of ~350 ± 15 µm). (<b>b</b>) The <span class="html-italic">n</span> and (<b>c</b>) <span class="html-italic">κ</span> ITO films as a function of frequency. Black open square: as-deposited; red circles: RTA-treated at 400 °C; green open triangles: RTA-treated at 600 °C; and blue open triangles: RTA-treated at 800 °C.</p>
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<p>The real (σ<sub>real</sub>) and imaginary (σ<sub>img</sub>) parts of conductivities as the function of THz frequencies of (<b>a</b>) as-deposited (<b>b</b>) RTA-treated at 400 °C (<b>c</b>) RTA-treated at 600 °C and (<b>d</b>) RTA-treated at 800 °C ITO films. Solid and open circles are experimentally extracted conductivities The dashed curves are fitting lines using both models.</p>
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<p>THz frequency dependent (<b>a</b>) transmittance (<b>b</b>) absorbance and (<b>c</b>) reflectance of as-deposited, RTA-treated at 400 °C, RTA-treated at 600 °C and RTA-treated at 800 °C ITO thin film.</p>
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<p>(<b>a</b>) The transmittance (<b>b</b>) reflectance and (<b>c</b>) absorptance of as-deposited, RTA-treated at 400 °C, RTA-treated at 600 °C and RTA-treated at 800 °C ITO thin film coated onto fused silica as well T and R of fused silica (<b>d</b>) in UV-VIS-NIR region.</p>
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<p>(<b>a</b>) Real (n) and (<b>b</b>) imaginary (κ) refractive indices of as-deposited, RTA-treated at 400 °C, RTA-treated at 600 °C and RTA-treated at 800 °C ITO thin film.</p>
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<p>The (<b>a</b>) wave-length dependent refractive index and (<b>b</b>) optical bandgap of as-deposited, RTA-treated at 400 °C, RTA-treated at 600 °C and RTA-treated at 800 °C ITO thin film.</p>
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30 pages, 2629 KiB  
Article
Supporting Immersive Video Streaming via V2X Communication
by Chenn-Jung Huang, Kai-Wen Hu, Mei-En Jian, Yi-Hung Lien and Hao-Wen Cheng
Electronics 2024, 13(14), 2796; https://doi.org/10.3390/electronics13142796 - 16 Jul 2024
Viewed by 499
Abstract
With the rapid advancement of autonomous driving and network technologies, future vehicles will function as network nodes, facilitating information transmission. Concurrently, in-vehicle entertainment systems will undergo substantial enhancements. Beyond traditional broadcasting and video playback, future systems will integrate immersive applications featuring 360-degree views [...] Read more.
With the rapid advancement of autonomous driving and network technologies, future vehicles will function as network nodes, facilitating information transmission. Concurrently, in-vehicle entertainment systems will undergo substantial enhancements. Beyond traditional broadcasting and video playback, future systems will integrate immersive applications featuring 360-degree views and six degrees of freedom (6DoF) capabilities. As autonomous driving technology matures, vehicle passengers will be able to engage in a broader range of entertainment activities while on the move. However, this evolution in video applications will significantly increase bandwidth demand for vehicular networks, potentially leading to bandwidth shortages in congested traffic areas. This paper presents a method for bandwidth allocation for vehicle video applications within the landscape of vehicle-to-everything (V2X) networks. By utilizing a millimeter-wave (mmWave), terahertz (THz) frequency band, and cell-free (CF) extremely large-scale multiple-input multiple-output (XL-MIMO) wireless communication technologies, we provide vehicle passengers with the necessary bandwidth resources. Additionally, we address bandwidth contention issues in congested road segments by incorporating communication methods tailored to the characteristics of vehicular environments. By classifying users and adjusting according to the unique requirements of various multimedia applications, we ensure that real-time applications receive adequate bandwidth. Simulation experiments validate the proposed method’s effectiveness in managing bandwidth allocation for in-vehicle video applications within V2X networks. It increases the available bandwidth during peak hours by 32%, demonstrating its ability to reduce network congestion and ensure smooth playback of various video application types. Full article
(This article belongs to the Special Issue Autonomous Vehicles Technological Trends, 2nd Edition)
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<p>Illustration of Video Applications Supported in V2X Communication.</p>
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<p>Diagram of Bandwidth Allocation for Video Applications in a Cell-Free In-Vehicle Network Architecture.</p>
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<p>Volume of vehicles throughout a day.</p>
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<p>Counts of video applications initiated by passengers in vehicles throughout a day.</p>
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<p>Bandwidth requirements for video applications within a day.</p>
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<p>The bandwidth allocation for the video applications prior to the algorithm’s implementation.</p>
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<p>Bandwidth allocated for video applications after applying the proposed algorithm.</p>
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<p>The available bandwidth both prior to and following the algorithm’s implementation and user bandwidth demand.</p>
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13 pages, 5640 KiB  
Article
Graphene and Vanadium Dioxide-Based Terahertz Absorber with Switchable Multifunctionality for Band Selection Applications
by Yan Liu, Lingxi Hu and Ming Liu
Nanomaterials 2024, 14(14), 1200; https://doi.org/10.3390/nano14141200 - 15 Jul 2024
Viewed by 583
Abstract
This study proposes a multifunctional absorber in the terahertz (THz) regime based on vanadium dioxide (VO2) and graphene with either–or band selector applications, which can be realized by electrically and thermally controlling the Fermi energy level of graphene and vanadium dioxide, [...] Read more.
This study proposes a multifunctional absorber in the terahertz (THz) regime based on vanadium dioxide (VO2) and graphene with either–or band selector applications, which can be realized by electrically and thermally controlling the Fermi energy level of graphene and vanadium dioxide, respectively. The broadband absorption can be achieved with absorptance exceeding 90%, when the VO2 film is in the metallic phase and the Fermi energy levels of the upper and lower graphene layers are simultaneously set to 0.6 and 0 eV, respectively. The double narrowband can be realized when the VO2 film is in the insulating phase and the Fermi energy levels in upper and lower graphene layers are set as 0 and 0.8 eV, respectively. By flexibly shifting between the broadband and the double narrowband, the proposed absorber can be used as an either–or band selector, corresponding optional bandwidth from 2.05 to 2.35 THz, and 3.25 to 3.6 THz. Furthermore, single narrowband absorption can be achieved by setting the conductivity of the VO2 film to appropriate values. The proposed absorber can be used in the THz regime in applications such as multifunctional devices, switches, cloaking objects, and band selectors. Full article
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<p>(<b>a</b>) Schematic of the multifunctional absorber with the polarization configuration of incident light. (<b>b</b>) Side view of the multifunctional absorber. (<b>c</b>) Top view of the unit cell for the upper square graphene layer and (<b>d</b>) lower square graphene layer.</p>
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<p>Real part (<b>a</b>) and imaginary part (<b>b</b>) of the complex relative dielectric permittivity of VO<sub>2</sub> with varying conductivity.</p>
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<p>(<b>a</b>) Schematic of incident wave interferences between interfaces. (<b>b</b>) Absorption spectra of the multifunctional absorber in different states. The green shadow areas indicate the optional bandwidths.</p>
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<p>Distributions of the electric field amplitude |E| for (<b>a</b>,<b>c</b>) the upper graphene layer and (<b>b</b>,<b>d</b>) the VO<sub>2</sub> film at the first and second resonant frequencies of 1.45 and 2.05 THz, respectively. Surface currents are marked with white arrows. Distributions of the power flow (red arrows) at the central cross-section of unit cell at (<b>e</b>) 1.45 THz and (<b>f</b>) 2.05 THz, respectively.</p>
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<p>Varying absorption spectra with (<b>a</b>) the thickness of the Topas layer (<span class="html-italic">h</span><sub>d1</sub>) between the lower graphene layer and VO<sub>2</sub> film, and the distances from the unit boundary of the connected graphene squares (<b>b</b>) <span class="html-italic">w</span><sub>1</sub> and (<b>c</b>) <span class="html-italic">w</span><sub>2</sub>, respectively.</p>
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<p>(<b>a</b>) Absorption spectra with increasing Fermi energy level <span class="html-italic">E</span><sub>f1</sub>, and the carrier mobility μ is fixed as 1500 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. (<b>b</b>) Absorption spectra with varying relaxation time <span class="html-italic">τ</span><sub>1</sub>, and the Fermi energy level is fixed as 0.6 eV.</p>
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<p>Distributions of the electric field amplitude |E| for (<b>a</b>,<b>d</b>,<b>g</b>) the upper graphene layer and (<b>b</b>,<b>e</b>,<b>h</b>) the bottom gold layer at the first, second, and third resonant frequencies of 0.95, 1.65, and 3.45 THz, respectively. Surface currents are marked with white arrows. Distributions of the power flow (red arrows) at the central cross-section of unit cell at (<b>c</b>) 1.45, (<b>f</b>) 1.65, and (<b>i</b>) 3.45THz, respectively.</p>
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<p>Absorption spectra varying with increasing (<b>a</b>) thickness of the Topas layer (<span class="html-italic">h</span><sub>d2</sub>) between the VO<sub>2</sub> film and bottom gold layer, and distances from the unit boundary of the connected graphene squares (<b>b</b>) <span class="html-italic">w</span><sub>3</sub> and (<b>c</b>) <span class="html-italic">w</span><sub>4</sub>, respectively.</p>
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<p>(<b>a</b>) Absorption spectra with increasing Fermi energy level <span class="html-italic">E</span><sub>f2</sub>, and the carrier mobility μ is fixed as 1500 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>. (<b>b</b>) Absorption spectra with varying relaxation time <span class="html-italic">τ</span><sub>2</sub>, and the Fermi energy level is fixed as 0.8 eV.</p>
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<p>Absorption spectra of the proposed absorber with varying conductivity of the VO<sub>2</sub> film, when (<b>a</b>) <span class="html-italic">E</span><sub>f1</sub> = 0.6 eV and <span class="html-italic">E</span><sub>f2</sub> = 0 eV; (<b>b</b>) <span class="html-italic">E</span><sub>f1</sub> = 0 eV and <span class="html-italic">E</span><sub>f2</sub> = 0.8 eV.</p>
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<p>Absorption spectrum of the absorber with varying conductivity of the VO<sub>2</sub> film at <span class="html-italic">E</span><sub>f1</sub> = <span class="html-italic">E</span><sub>f2</sub> = 0.8 eV.</p>
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<p>(<b>a</b>) Real parts and (<b>b</b>) imaginary parts of the relative impedance <span class="html-italic">Z</span><sub>r</sub> with different conductivities of VO<sub>2</sub>.</p>
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21 pages, 432 KiB  
Article
Distance-Enhanced Hybrid Hierarchical Modulation and QAM Modulation Schemes for UAV Terahertz Communications
by Zhenzhen Hu, Yong Xu, Yonghong Deng and Zhongpei Zhang
Drones 2024, 8(7), 300; https://doi.org/10.3390/drones8070300 - 6 Jul 2024
Cited by 1 | Viewed by 531
Abstract
Unmanned aerial vehicles (UAVs) are extensively employed in pursuit, rescue missions, and agricultural applications. These operations require substantial data and video transmission, demanding significant spectral resources. The ultra-broad bandwidth of 0.1–10 THz in the Terahertz (THz) frequency range is essential for future UAV-based [...] Read more.
Unmanned aerial vehicles (UAVs) are extensively employed in pursuit, rescue missions, and agricultural applications. These operations require substantial data and video transmission, demanding significant spectral resources. The ultra-broad bandwidth of 0.1–10 THz in the Terahertz (THz) frequency range is essential for future UAV-based wireless communications. However, the available bandwidth in the THz frequency spectrum varies with transmission distance. To enhance spectral efficiency over this variable bandwidth, we propose using hierarchical modulation (HM) in the overlapped spectrum and traditional quadrature amplitude modulation (QAM) in the non-overlapped spectrum for closer users. Furthermore, we analyze the single-user case and utilize the block-coordinated descent (BCD) method to jointly optimize the modulation order, subcarrier bandwidth, and sub-band power to improve the system sum rate. Finally, considering the mobility and randomness of UAV users, we design a modulation switching rule to dynamically adjust to changes in distance as users move, thereby enhancing data rates. Simulation results demonstrate superior performance in data rate and design complexity compared to existing methods such as hierarchical bandwidth modulation (HBM) and HM schemes. Full article
(This article belongs to the Special Issue UAV-Assisted Intelligent Vehicular Networks 2nd Edition)
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<p>The UAV-based THz system model.</p>
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<p>The data rate comparison of three different power optimization schemes.</p>
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<p>Complexity vs Pt when <math display="inline"><semantics> <mrow> <msub> <mi>B</mi> <mrow> <mi>a</mi> <mi>v</mi> <mi>a</mi> <mi>i</mi> <mi>l</mi> <mi>a</mi> <mi>b</mi> <mi>l</mi> <mi>e</mi> </mrow> </msub> <mo>=</mo> <mn>2.087</mn> <mo>×</mo> <msup> <mn>10</mn> <mn>12</mn> </msup> </mrow> </semantics></math> Hz.</p>
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<p>The modulation adjustment probability with user’s mobility.</p>
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<p>The data rate of different modulation schemes.</p>
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<p>BER comparison under different modulation schemes.</p>
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<p>The modulation order comparison of different modulation schemes.</p>
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