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Nanomaterials
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Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept...
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Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Solar Energy and Solar Cells".

Deadline for manuscript submissions: 8 August 2025 | Viewed by 1457

Special Issue Editors

Dr. Shuhong Xu

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
Interests: optoelectronic functional materials and devices
Dr. Yi Zhang

E-Mail Website
Guest Editor
College of Renewable Energy, Hohai University, Nanjing, China
Interests: thermalization mechanism; ultrafast carrier dynamics; hot carrier solar cells; III-V quantum well structure; thermal photovoltaic solar cells; III-V bulk semiconductors; perovskite photovoltaic materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The development of fundamental theories, such as solid-state physics, quantum mechanics and energy band theory, not only accelerates the development of semiconductor physics, but also makes semiconductor device manufacturing gradually develop into energy band engineering-based device manufacturing. Compared with the traditional silicon-based semiconductors, the III-V group compound semiconductors represented by GaAs, GaP and InP possess the features of high band-gap width, electron mobility and electron saturation rate, making them more applicable for high-speed, high-frequency and high-power optoelectronic devices under high temperature and intense irradiance conditions. Moreover, the low-dimensional limited structure materials consisting of II-VI group semiconductors like CdS, CdTe and CdSe further diversify the material systems for optoelectronic devices. Meanwhile, halide perovskite has experienced rapid development in both fundamental research and applications in different devices. These devices are widely used in photovoltaic solar cells, power electronic devices, lasers, chemical and biological detection and semiconductor lighting, inducing a series of scientific problems in the interdisciplinary field of physics, optics, material science, optoelectronics, and so on. This Special Issue aims to collect the latest research progress of such semiconductors in the field of solar cell, solid-state physics, optics and optoelectronics, and to explore the basic scientific theories and practical technical applications.

Dr. Shuhong Xu
Dr. Yi Zhang
Guest Editors

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

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Keywords

  • II-VI semiconductors
  • III-V semiconductors
  • halide perovskite
  • solid-state physics
  • optics
  • optoelectronics
  • laser
  • detector
  • photovoltaic solar cell
  • ultrafast carrier dynamics

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Published Papers (3 papers)

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Research

Jump to: Review

8 pages, 1717 KiB  
Article
Analyzing Efficiency of Perovskite Solar Cells Under High Illumination Intensities by SCAPS Device Simulation
by Heng Li, Yongtao Huang, Muyan Zhu, Pingyuan Yan and Chuanxiang Sheng
Nanomaterials 2025, 15(4), 286; https://doi.org/10.3390/nano15040286 - 13 Feb 2025
Viewed by 338
Abstract
The perovskite solar cell (PSC) is undergoing intense study to meet sustainable energy and environmental demands. However, large-sized solar cells will degrade the power conversion efficiency, thus concentrating light on small-size devices would be a solution. Here, we report the performance of a [...] Read more.
The perovskite solar cell (PSC) is undergoing intense study to meet sustainable energy and environmental demands. However, large-sized solar cells will degrade the power conversion efficiency, thus concentrating light on small-size devices would be a solution. Here, we report the performance of a p–i–n structured device using CH3NH3PbI3 (MAPbI3) as the active layer with an area of 6 mm2. We prove that the power output would be up to 4.2 mW under 10 Suns compared to the 0.9 mW obtained under 1 Sun; however, this results in an actual efficiency drop of the PSC. Further, using a SCAPS device simulation, we found that the intrinsic properties, such as mobility and defect density, of MAPbI3 has no profound influence on the relationship between light intensity and power conversion efficiency (PCE), but the series resistance is the dominant limiting factor on the performance of the PSC under high illumination intensities. Our work suggests the potential of perovskite in concentrating photovoltaics and makes recommendations for future development. Full article
(This article belongs to the Special Issue Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells)
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Figure 1

Figure 1
<p>(<b>a</b>) Typical J-V curve of a MAPbI3 perovskite solar cell with the forward and reverse scan direction under a simulated AM 1.5 G illumination. (<b>b</b>) J-V curves of a MAPbI<sub>3</sub> perovskite solar cell excited using a continuous wave laser of 532 nm at various intensities. (<b>c</b>–<b>f</b>): J<sub>sc</sub>, V<sub>oc</sub>, FF number, and PCE of a solar cell as the function of the intensity of the excitation laser.</p> Full article ">Figure 2
<p>(<b>a</b>) Device structure diagram. (<b>b</b>) Device structure and energy band diagram of each layer. (<b>c</b>) Simulated J-V curves at various defect intensities.</p> Full article ">Figure 3
<p>(<b>a</b>–<b>d</b>): V<sub>oc</sub>, J<sub>sc</sub>, FF number, and PCE as a function of light intensities at various defect densities.</p> Full article ">Figure 4
<p>(<b>a</b>) Simulated PCE as the function of light intensity at two groups of electron and hole mobility. (<b>b</b>) Simulated PCE as the function of light intensity at two shunt resistances, and the series resistance is fixed at 4.5 Ω·cm<sup>2</sup>. (<b>c</b>,<b>d</b>): Simulated PCE and FF number at three groups of R<sub>s</sub> and R<sub>sh</sub>.</p> Full article ">
8 pages, 4545 KiB  
Article
Study of Thermalization Mechanisms of Hot Carriers in BABr-Added MAPbBr3 for the Top Layer of Four-Junction Solar Cells
by Yi Zhang, Huilong Chen, Junfeng Qu, Jiayu Zhang and Gavin Conibeer
Nanomaterials 2024, 14(24), 2041; https://doi.org/10.3390/nano14242041 - 19 Dec 2024
Viewed by 692
Abstract
The hot carrier multi-junction solar cell (HCMJC) is an advanced-concept solar cell with a theoretical efficiency greater than 65%. It combines the advantages of hot carrier solar cells and multi-junction solar cells with higher power conversion efficiency (PCE). The thermalization coefficient (Q [...] Read more.
The hot carrier multi-junction solar cell (HCMJC) is an advanced-concept solar cell with a theoretical efficiency greater than 65%. It combines the advantages of hot carrier solar cells and multi-junction solar cells with higher power conversion efficiency (PCE). The thermalization coefficient (Qth) has been shown to slow down by an order of magnitude in low-dimensional structures, which will significantly improve PCE. However, there have been no studies calculating the Qth of MAPbBr3 quantum dots so far. In this work, the Qth values of MAPbBr3 quantum dots and after BABr addition were calculated based on power-dependent steady-state photoluminescence (PD-SSPL). Their peak positions in PD-SSPL increased from 2.37 to 2.71 eV after adding BABr. The fitting shows that, after adding BABr, the Qth decreased from 2.64 ± 0.29 mW·K−1·cm−2 to 2.36 ± 0.25 mW·K−1·cm−2, indicating a lower relaxation rate. This is because BABr passivates surface defects, slowing down the carrier thermalization process. This work lays the foundation for the theoretical framework combining perovskite materials, which suggests that the appropriate passivation of BABr has the potential to further reduce Qth and make MAPbBr3 QDs with BABr modified more suitable as the top absorption layer of HCMJCs. Full article
(This article belongs to the Special Issue Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells)
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Figure 1

Figure 1
<p>XRD pattern of MAPbBr<sub>3</sub> with BABr modified.</p> Full article ">Figure 2
<p>(<b>a</b>) The PL spectra for both the pristine and BABr-modified MAPbBr<sub>3</sub> samples. (<b>b</b>) The UV–vis absorption spectra curves and the Tauc plot as inset in (<b>b</b>) for both samples.</p> Full article ">Figure 3
<p>PD-SSPL results in MAPbBr<sub>3</sub> QDs: (<b>a</b>) pristine and (<b>b</b>) with BABr with different power densities in mW·cm<sup>−2</sup>, where the high-energy-tail fitting region is indicated by the shaded area. Absorbed power-dependent carrier temperature for MAPbBr<sub>3</sub> QDs (<b>c</b>) pristine and (<b>d</b>) with BABr modified calculated by high-energy-tail fitting.</p> Full article ">Figure 4
<p><span class="html-italic">P<sub>abs</sub></span>/<span class="html-italic">exp</span>(<span class="html-italic">−E<sub>LO</sub></span>/<span class="html-italic">k<sub>B</sub>T<sub>C</sub></span>) (mW·cm<sup>−2</sup>) as a function of Δ<span class="html-italic">T</span> (K); the gradient indicated by the blue dashed line yields the thermalization coefficient <span class="html-italic">Q<sub>th</sub></span>, with values of 2.64 ± 0.29 mW·K<sup>−1</sup>·cm<sup>−2</sup> and 2.36 ± 0.25 mW·K<sup>−1</sup>·cm<sup>−2</sup> for pristine and with BABr modified.</p> Full article ">Figure 5
<p>The effects of BABr addition on thermalization and <span class="html-italic">Q<sub>th</sub></span> in MAPbBr<sub>3</sub> QDs are analyzed from different perspectives.</p> Full article ">

Review

Jump to: Research

27 pages, 6383 KiB  
Review
A Review of Measurement and Characterization of Film Layers of Perovskite Solar Cells by Spectroscopic Ellipsometry
by Liyuan Ma, Xipeng Xu, Changcai Cui, Tukun Li, Shan Lou, Paul J. Scott, Xiangqian Jiang and Wenhan Zeng
Nanomaterials 2025, 15(4), 282; https://doi.org/10.3390/nano15040282 - 13 Feb 2025
Viewed by 395
Abstract
This article aims to complete a review of current literature describing the measurement and characterization of photoelectric and geometric properties of perovskite solar cell (PSC) film layer materials using the spectroscopic ellipsometry (SE) measurement technique. Firstly, the influence of film quality on the [...] Read more.
This article aims to complete a review of current literature describing the measurement and characterization of photoelectric and geometric properties of perovskite solar cell (PSC) film layer materials using the spectroscopic ellipsometry (SE) measurement technique. Firstly, the influence of film quality on the performance of PSCs is combed and analyzed. Secondly, SE measurement technology is systematically introduced, including the measurement principle and data analysis. Thirdly, a detailed summary is provided regarding the characterization of the geometric and optoelectronic properties of the substrate, electron transport layer (ETL), perovskite layer, hole transport layer (HTL), and metal electrode layer using SE. The oscillator models commonly used in fitting film layer materials in PSCs are comprehensively summarized. Fourthly, the application of SE combined with various measurement techniques to assess the properties of film layer materials in PSCs is presented. Finally, the noteworthy direction of SE measurement technology in the development of PSCs is discussed. The review serves as a valuable reference for further enhancing the application of SE in PSCs, ultimately contributing to the commercialization of PSCs. Full article
(This article belongs to the Special Issue Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells)
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Figure 1

Figure 1
<p>Measurement and characterization of photoelectric and geometric properties for each film layer of a typical SnO<sub>2</sub>-based PSC by SE.</p> Full article ">Figure 2
<p>Three common structures of PSCs.</p> Full article ">Figure 3
<p>Influencing factors of power conversion efficiency of PSCs.</p> Full article ">Figure 4
<p>The basic principle of SE measurement and analysis.</p> Full article ">Figure 5
<p>Fitting strategies of PSC multilayer films stack structure.</p> Full article ">Figure 6
<p>Characterization of SnO<sub>2</sub> films by SE. (<b>a</b>) Different substrates [<a href="#B54-nanomaterials-15-00282" class="html-bibr">54</a>]. (<b>b</b>) Different temperature [<a href="#B53-nanomaterials-15-00282" class="html-bibr">53</a>]. (<b>c</b>) Different thickness [<a href="#B51-nanomaterials-15-00282" class="html-bibr">51</a>]. (<b>d</b>) Different technology [<a href="#B52-nanomaterials-15-00282" class="html-bibr">52</a>]. (<b>e</b>) Different doping ratios [<a href="#B55-nanomaterials-15-00282" class="html-bibr">55</a>].</p> Full article ">Figure 7
<p>Analysis procedure of geometric and photoelectric properties of SnO<sub>2</sub> films by SE.</p> Full article ">Figure 8
<p>Perovskite materials and devices. (<b>a</b>) Element [<a href="#B16-nanomaterials-15-00282" class="html-bibr">16</a>]. (<b>b</b>) Structure [<a href="#B75-nanomaterials-15-00282" class="html-bibr">75</a>]. (<b>c</b>) Device [<a href="#B76-nanomaterials-15-00282" class="html-bibr">76</a>]. (<b>d</b>) Principle [<a href="#B77-nanomaterials-15-00282" class="html-bibr">77</a>].</p> Full article ">Figure 9
<p>Preparation process of perovskite film [<a href="#B80-nanomaterials-15-00282" class="html-bibr">80</a>]. (<b>a</b>) One-step coating. (<b>b</b>) Two-step coating.</p> Full article ">Figure 10
<p>Influence factors of perovskite films. (<b>a</b>) Rough layer [<a href="#B82-nanomaterials-15-00282" class="html-bibr">82</a>,<a href="#B83-nanomaterials-15-00282" class="html-bibr">83</a>]. (<b>b</b>) Ion doping [<a href="#B86-nanomaterials-15-00282" class="html-bibr">86</a>]. (<b>c</b>) Interfacial layer [<a href="#B20-nanomaterials-15-00282" class="html-bibr">20</a>]. (<b>d</b>) Void ratio [<a href="#B61-nanomaterials-15-00282" class="html-bibr">61</a>].</p> Full article ">Figure 11
<p>Influence of the external environment on perovskite films [<a href="#B87-nanomaterials-15-00282" class="html-bibr">87</a>].</p> Full article ">Figure 12
<p>Influence of external environment on the properties of the perovskite film characterized by SE. (<b>a</b>) Humidity [<a href="#B89-nanomaterials-15-00282" class="html-bibr">89</a>]. (<b>b</b>) Temperature [<a href="#B90-nanomaterials-15-00282" class="html-bibr">90</a>].</p> Full article ">Figure 13
<p>(<b>a</b>) Optical constant of the Spiro-OMeTAD film [<a href="#B113-nanomaterials-15-00282" class="html-bibr">113</a>]. (<b>b</b>) Optical constant of PEDOT: PSS, Cu<sub>2</sub>O, and CuI films [<a href="#B114-nanomaterials-15-00282" class="html-bibr">114</a>]. (<b>c</b>) Optical constant of the NiOx film [<a href="#B115-nanomaterials-15-00282" class="html-bibr">115</a>].</p> Full article ">Figure 14
<p>Assist technique in spectroscopic ellipsometry. (<b>a</b>) Scanning electron microscopy (SEM) [<a href="#B61-nanomaterials-15-00282" class="html-bibr">61</a>]. (<b>b</b>) Photoluminescence (PL) [<a href="#B46-nanomaterials-15-00282" class="html-bibr">46</a>]. (<b>c</b>) Atomic force microscopy (AFM) [<a href="#B61-nanomaterials-15-00282" class="html-bibr">61</a>]. (<b>d</b>) Ultraviolet-visible spectroscopy (UV-Vis) [<a href="#B127-nanomaterials-15-00282" class="html-bibr">127</a>].</p> Full article ">
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