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Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
/ Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C03039
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
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2.
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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
/ Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436
Fulltext: PDF;
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3.
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DRD 7: Proposal for an R&D Collaboration on Electronics and On-Detector Processing
/ Baudot, Jerome (Centre National de la Recherche Scientifique (FR)) ; French, Marcus Julian (Science and Technology Facilities Council STFC (GB)) ; Kluit, Ruud (Nikhef National institute for subatomic physics (NL)) ; Rivetti, Angelo (Universita e INFN Torino (IT)) ; Simon, Frank (KIT - Karlsruhe Institute of Technology (DE)) ; Vasey, Francois (CERN) ; Barbero, Marlon Benoit (Centre National de la Recherche Scientifique (FR)) ; Baron, Sophie (CERN) ; Borghello, Giulio (CERN) ; Caselle, Michele (KIT - Karlsruhe Institute of Technology (DE)) et al.
The undersigned institutes intend to form a new CERN DRD collaboration to develop future electronic systems and technologies for particle physics detectors. [...]
CERN-DRDC-2024-012 ; DRDC-P-DRD7.
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2024.
DRD7 Proposal
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4.
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5.
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Generic Analog 8 Bit DAC IP Block in 28nm CMOS for the High Energy Physics Community
/ Piller, Markus (CERN ; Graz, Tech. U.) ; Ballabriga, Rafael (CERN) ; Bandi, Franco Nahuel (CERN) ; Borghello, Giulio (CERN) ; Ceresa, Davide (CERN) ; Pejasinovic, Risto (CERN) ; Sriskaran, Viros (CERN) ; Michalowska-Forsyth, Alicja (Graz, Tech. U.) ; Deutschmann, Bernd (Graz, Tech. U.)
The High Energy Physics (HEP) microelectronic design community is leading a CMOS technology change from Application Specific Integrated Circuit (ASIC) designs in 130nm and 65nm to 28nm for the future upgrades of the High Luminosity Large Hadron Collider (LHC). The technology change to a newer and one of the last planar bulk technologies allows benefiting from advances like higher intrinsic density and speed. [...]
2022 - 4 p.
- Published in : 10.1109/Austrochip56145.2022.9940783
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6.
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A generalized EKV charge-based MOSFET model including oxide and interface traps
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Mattiazzo, Serena (CERN) ; Baschirotto, Andrea (INFN, Padua) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges
in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface trapped charges, the mobile charge density can still be linearized but with respect to both the surface potential and the channel voltage. [...]
2021 - 9 p.
- Published in : Solid State Electron. 177 (2021) 107951
Fulltext: PDF;
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7.
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Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors
/ Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Termo, Gennaro (CERN) ; Michelis, Stefano (CERN) ; Costanzo, Sebastiano (CERN) ; Koch, Henri D (CERN) ; Fleetwood, Daniel M (Vanderbilt U.)
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs, different temperatures, and different biases. [...]
2021 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 573-580
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8.
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10.17181/CERN-EP-RDET-2021-001
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9.
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Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses
/ Bonaldo, Stefano (U. Padua (main)) ; Gerardin, Simone (U. Padua (main)) ; Jin, Xiaoming (Northwest Inst. Nucl. Tech., Xian) ; Paccagnella, Alessandro (U. Padua (main)) ; Faccio, Federico (CERN) ; Borghello, Giulio (CERN) ; Fleetwood, Daniel M (Vanderbilt U. (main))
In this paper, a commercial 65-nm CMOS technology is irradiated at ultrahigh ionizing doses and then annealed at high temperature under different bias conditions. The experimental results demonstrate the high sensitivity of pMOSFETs to radiation-induced short-channel effects, related to the buildup of defects in spacer dielectrics. [...]
2019 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1574-1583
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1574-1583
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10.
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Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
/ Nikolaou, Aristeidis (Crete, Tech. U.) ; Chevas, Loukas (Crete, Tech. U.) ; Papadopoulou, Alexia (Crete, Tech. U.) ; Makris, Nikolaos (Crete, Tech. U.) ; Bucher, Matthias (Crete, Tech. U.) ; Borghello, Giulio (Udine U.) ; Faccio, Federico (CERN)
Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. [...]
IEEE, 2019 - 4 p.
- Published in : 10.23919/MIXDES.2019.8787098
In : 26th International Conference on Mixed Design of Integrated Circuits and System, Rzeszow, Poland, 27 - 29 Jun 2019, pp.306-309
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