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WO2021120314A1 - 一种显示面板 - Google Patents

一种显示面板 Download PDF

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Publication number
WO2021120314A1
WO2021120314A1 PCT/CN2019/129272 CN2019129272W WO2021120314A1 WO 2021120314 A1 WO2021120314 A1 WO 2021120314A1 CN 2019129272 W CN2019129272 W CN 2019129272W WO 2021120314 A1 WO2021120314 A1 WO 2021120314A1
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WIPO (PCT)
Prior art keywords
layer
light
quantum dot
emitting
display panel
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PCT/CN2019/129272
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English (en)
French (fr)
Inventor
李元元
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深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US16/630,885 priority Critical patent/US11121342B2/en
Publication of WO2021120314A1 publication Critical patent/WO2021120314A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel.
  • Quantum dot light-emitting diode (QD-OLED) technology is a display technology that combines electroluminescent diodes and quantum dot photoluminescence.
  • QD-OLED technology uses electroluminescent diodes to generate blue light to excite red/green quantum dots to form a full-color display, with excellent performance such as wide color gamut and wide viewing angle, and is regarded as a potential technology for large-size OLEDs.
  • FIG. 1 it is a schematic diagram of the structure of an existing quantum dot light-emitting diode display panel.
  • the quantum dot light-emitting diode display panel 90 includes an array substrate 91, a blue electroluminescent diode 92, and an encapsulation layer stacked from bottom to top. 93.
  • the quantum dot photoconversion layer 95 includes a red pixel 951 and a green pixel 952 made of quantum dot material.
  • the blue light generated by the blue electroluminescent diode 92 and ambient light are used to excite the quantum dot to convert and emit Red light/green light is emitted.
  • the red light/green light emission efficiency is low, and its brightness and service life are reduced.
  • the contrast of the quantum dot light emitting diode display panel 90 in the dark state is poor.
  • An object of the present invention is to provide a display panel that can solve the problems of low light output efficiency, low brightness, and poor contrast in the dark state of the existing quantum dot light emitting diode display panel.
  • an embodiment of the present invention provides a display panel, including a light-emitting substrate, an encapsulation layer, and a color filter substrate; the light-emitting substrate is provided with a light-emitting layer; the packaging layer is provided on the light-emitting substrate; The color filter substrate and the light-emitting substrate are arranged opposite to each other; the packaging layer has at least one first nano laminate for reflecting the light emitted by the color filter substrate, and the first nano laminate includes stacked The first inorganic layer and the first organic layer, the refractive index of the first organic layer is smaller than the refractive index of the first inorganic layer.
  • the refractive index of the first inorganic layer is n 1
  • the thickness of the first inorganic layer is d 1
  • the first organic layer The refractive index of is n 2
  • the thickness of the first organic layer is d 2
  • the light emitted by the color film substrate is red light and/or green light.
  • the color filter substrate includes a base layer, a buffer layer, and a quantum dot photoconversion layer; the buffer layer is provided on the base layer, and the buffer layer has at least one second nano laminate layer for reflecting The light emitted by the light-emitting substrate; the quantum dot photoconversion layer is provided on the surface of the buffer layer facing the light-emitting substrate; the second nano-stack includes a second inorganic layer and a second organic layer that are stacked , The refractive index of the second organic layer is smaller than the refractive index of the second inorganic layer.
  • the light emitted by the light-emitting substrate is blue light.
  • the color filter substrate further includes a color filter layer, which is arranged on the surface of the quantum dot photoconversion layer away from the light-emitting substrate.
  • the color filter layer has a plurality of openings, and some of the openings are filled with color resist units.
  • the color resistance unit is one of a red color resistance unit and a green color resistance unit; the buffer layer is arranged on the color resistance unit and in the opening.
  • the quantum dot photoconversion layer is provided with a quantum dot photoconversion unit, the light-emitting layer has several light-emitting units, and the quantum dot photoconversion unit is arranged opposite to the light-emitting unit; the quantum dot The photoinduced conversion unit includes a red light quantum dot conversion unit and a green light quantum dot conversion unit; the red light quantum dot conversion unit is correspondingly set on the red color resist unit, and the green light quantum dot conversion unit is correspondingly set on the green On the photoresist unit.
  • the thickness of the quantum dot photoconversion layer ranges from 20 nm to 100 nm.
  • the light-emitting substrate includes a substrate, a thin film transistor layer, a first electrode, a pixel barrier layer, the light-emitting layer, and a second electrode; the thin film transistor layer is disposed on the substrate; the first electrodes are spaced apart from each other Is disposed on the thin film transistor layer; the pixel blocking layer is disposed on the thin film transistor layer between adjacent first electrodes; the light-emitting layer is disposed on the first between adjacent pixel blocking layers On an electrode; the second electrode is arranged on the blue light emitting layer and the pixel blocking layer.
  • the present invention relates to a display panel.
  • the present invention has at least one first nano laminate in the encapsulation layer to reflect the light emitted by the color film substrate, specifically red light and/or green light. , Can reduce the light loss of the red light quantum dot conversion unit and the green light quantum dot conversion unit due to scattering, and improve the light extraction efficiency;
  • the present invention also has at least one second nano-stack in the buffer layer for Reflects the light emitted by the light-emitting substrate, specifically blue light, which can block the influence of ambient light on the device, and can also form a reflective light path with the second electrode, so that blue light enters the quantum dot photoconversion unit multiple times and is utilized, thereby
  • the utilization efficiency of blue light is improved, and the existing quantum dot light emitting diode display panels can solve the problems of low light output efficiency, low brightness, and poor contrast in the dark state.
  • FIG. 1 is a schematic diagram of the structure of a conventional quantum dot light emitting diode display panel.
  • FIG. 2 is a schematic diagram of the structure of the display panel according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic diagram of the structure of the encapsulation layer in Embodiment 1 of the present invention.
  • FIG. 4 is a schematic diagram of the structure of the color filter substrate of Embodiment 2 of the present invention.
  • FIG. 5 is a schematic diagram of the structure of a display panel according to Embodiment 2 of the present invention.
  • FIG. 6 is a schematic diagram of the structure of the buffer layer in Embodiment 2 of the present invention.
  • FIG. 7 is a schematic diagram of the structure of a display panel according to Embodiment 3 of the present invention.
  • Base layer 32, buffer layer, 33, quantum dot photoconversion layer, 34, color film layer,
  • Quantum dot photoconversion unit 3311
  • red light quantum dot conversion unit 3311
  • the component can be directly placed on the other component; there may also be an intermediate component on which the component is placed , And the intermediate component is placed on another component.
  • a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is “installed to” or “connected to” through an intermediate component Another component.
  • a display panel 100 which includes a light-emitting substrate 1, an encapsulation layer 2 and a color filter substrate 3; the light-emitting substrate 1 is provided with a light-emitting layer 10,
  • the light emitted by the light-emitting layer 10 includes blue light;
  • the encapsulation layer 2 is provided on the light-emitting substrate 1 and has an overlapping structure of an inorganic layer and an organic layer, which can effectively avoid water and oxygen invasion;
  • the color filter substrate 3 is arranged opposite to the light emitting substrate 1;
  • the packaging layer 2 has at least one first nano laminate 21 for reflecting the light emitted by the color filter substrate 3, and the first nano laminate
  • the layer 21 includes a first inorganic layer 211 and a first organic layer 212 that are stacked, and the refractive index of the first organic layer 212 is smaller than the refractive index of the first inorganic layer 211.
  • the color filter substrate 3 includes a first inorganic layer 211 and a first organic layer 212 that are
  • the refractive index of the first inorganic layer 211 is n 1
  • the first inorganic layer 211 The thickness of the first organic layer 212 is d 1
  • the refractive index of the first organic layer 212 is n 2
  • the thickness of the first organic layer 212 is d 2
  • the range of d 1 and d 2 is preferably 5 nm to 325 nm, and more preferably 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, and 300 nm.
  • the light emitted by the color film substrate 3 is red light and/or green light.
  • the light loss caused by scattering can be reduced, and the Light-emitting efficiency: It can solve the problems of low light-emitting efficiency, low brightness, and poor contrast in the dark state of the existing quantum dot light-emitting diode display panel 100.
  • each of the first nano-stacks 21 corresponds to reflecting red light and /Or light of a certain wavelength in the green light, the multilayered first nano-stack 21 collectively realizes the effect of reflecting red light and/or green light.
  • the light-emitting substrate 1 includes a substrate 11, a thin film transistor layer 12, a first electrode 13, a pixel barrier layer 14, the light-emitting layer 10, and a second electrode 15;
  • the layer 12 is disposed on the substrate 11; the first electrodes 13 are disposed on the thin film transistor layer 12 at intervals; the pixel barrier layer 14 is disposed on the thin film between the adjacent first electrodes 13 On the transistor layer 12; the light-emitting layer 10 is arranged on the first electrode 13 between the adjacent pixel barrier layers 14; the second electrode 15 is arranged on the blue light-emitting layer 10 and the pixel barrier layer 14 on.
  • the first electrode 13 is an anode
  • the second electrode 15 is a cathode.
  • the display panel 100 further includes a filler layer 4, which is provided between the color filter substrate 3 and the light-emitting substrate 1, for connecting the color filter substrate 3 and The light-emitting substrate 1 fills the gap between the two.
  • the second embodiment includes all the technical features of the first embodiment.
  • the color filter substrate 3 in the second embodiment includes a base layer 31, a buffer Layer 32 and quantum dot photoconversion layer 33;
  • the buffer layer 32 is disposed on the base layer 31, and the buffer layer 32 has at least one second nano-stack 321 for reflecting the light-emitting substrate 1 Light;
  • the quantum dot photoconversion layer 33 is provided on the surface of the buffer layer 32 facing the light-emitting substrate 1;
  • the second nano-stacked layer 321 includes a second inorganic layer 3211 and a second organic layer that are stacked 3212.
  • the refractive index of the second organic layer 3212 is smaller than the refractive index of the second inorganic layer 3211.
  • the refractive index of the second inorganic layer 3211 is n 3
  • the second inorganic layer 3211 The thickness of the second organic layer 3212 is n 3
  • the refractive index of the second organic layer 3212 is n 4
  • the thickness of the second organic layer 3212 is d 4
  • the range of d 3 and d 4 is preferably 5 nm to 325 nm, and more preferably 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, and 300 nm.
  • the light emitted by the light-emitting substrate 1 is blue light.
  • a reflective light path is formed so that blue light enters the quantum dot photoconversion layer 33 multiple times to be used, thereby improving the utilization efficiency of blue light, and can solve the problem of low light output efficiency, low brightness and darkening of the existing quantum dot light emitting diode display panel. Problems such as poor contrast during the state.
  • the buffer layer 32 has multiple layers of the second nano-stack 321, it has a laminated structure; the principle of reflecting blue light is the same as that in the first embodiment.
  • the principle of green light is the same, and the materials of the second inorganic layer 3211 and the second organic layer 3212 and the corresponding refractive index values are also shown in Table 1, which will not be repeated here.
  • the color filter substrate 3 further includes a color filter layer 34 disposed on the surface of the quantum dot photoconversion layer 33 away from the light-emitting substrate 1.
  • the color film layer 34 has a number of openings, and some of the openings are filled with color resistance units 341.
  • the color resistance units 341 are one of the red color resistance unit 3411 and the green color resistance unit 3412; the buffer layer 32 is provided on the color resistance unit 3411. Unit 341 and in the opening.
  • the main part of the color filter layer 34 is a black matrix 342, which is provided corresponding to the pixel barrier layer 14 of the light-emitting substrate 1, and the opening is provided at the position of the black matrix 342 corresponding to the light-emitting layer 10. , Filling the color resist unit 341 in a part of the opening.
  • the quantum dot photoconversion layer 33 is provided with a quantum dot photoconversion unit 331, the light-emitting layer 10 has a plurality of light-emitting units 101, and the quantum dot photo-conversion unit 331 and the light-emitting unit 101 is relatively disposed;
  • the quantum dot photoconversion unit 331 includes a red light quantum dot conversion unit 3311 and a green light quantum dot conversion unit 3312;
  • the red light quantum dot conversion unit 3311 is correspondingly disposed on the red color resist unit 3411, so
  • the green light quantum dot conversion unit 3312 is correspondingly disposed on the green light color resist unit 3412.
  • a black barrier 332 is provided at the position of the quantum dot photoconversion layer 33 corresponding to the black matrix 342 of the color film layer 34 to shield light.
  • the third embodiment of the present invention includes most of the technical features of the second embodiment.
  • the color film layer 34 does not need to be provided, and only the quantum dot light is required.
  • the thickness range of the conversion layer 33 is 20nm-100nm to save the color film layer 34, thereby improving the brightness of the panel, and at the same time, it can block the environmental light from deteriorating the quantum dot photoconversion unit 331 and the light-emitting layer 10 .
  • the function of the color film layer 34 is to filter out excess light of other colors to obtain pure monochromatic light.
  • the thickness of the quantum dot photoconversion layer 33 can be about 10 nm, and the color film layer 34 needs to be fabricated; when the quantum dot photoconversion layer 33 is relatively thick, for example, greater than or equal to 20 nm, it can be All the excess blue light is absorbed, so that the color film layer 34 does not need to be made.
  • the thickness of the quantum dot photoconversion layer 33 in this embodiment is preferably 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm.
  • the red light quantum dot conversion unit can be reduced. 3311 and the green light quantum dot conversion unit 3312 due to the light loss caused by scattering, improve the light extraction efficiency; on the other hand, the present invention also has at least one second nano laminate 321 in the buffer layer 32 to reflect the light emission
  • the light emitted by the substrate 1 is specifically blue light, which can block the influence of ambient light on the device, and can also form a reflective light path with the second electrode 15, so that the blue light enters the quantum dot photoconversion unit 331 multiple times to be utilized, thereby improving
  • the utilization efficiency of blue light can solve the problems of low light output efficiency, low brightness, and poor contrast in the dark state of the existing quantum dot light emitting diode display panel 100.
  • the display panel 100 provided by the present invention has been described in detail above. It should be understood that the exemplary embodiments described herein should only be regarded as descriptive, and used to help understand the method and core idea of the present invention, but not to limit the present invention. Descriptions of features or aspects in each exemplary embodiment should generally be considered as applicable to similar features or aspects in other exemplary embodiments. Although the present invention has been described with reference to exemplary embodiments, various changes and modifications can be suggested to those skilled in the art. The present invention intends to cover these changes and modifications within the scope of the appended claims. Any modification, equivalent replacement and improvement made within the spirit and principle of the present invention shall be included in the protection scope of the present invention. .

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Abstract

一种显示面板，包括发光基板（1）、封装层（2）以及彩膜基板（3）；封装层（2）中具有至少一第一纳米叠层（21），用以反射彩膜基板（3）发出的光线，第一纳米叠层（21）包括层叠设置的第一无机层（211）和第一有机层（212），第一有机层（211）的折射率小于第一无机层（212）的折射率。通过在封装层（2）中具有至少一第一纳米叠层（21），用以反射彩膜基板（3）发出的红光和/或绿光，可以减少红光量子点转换单元（3311）和绿光量子点转换单元（3312）因散射造成的光损失，提高出光效率。

Description

一种显示面板 技术领域
本发明涉及显示技术领域，具体涉及一种显示面板。
背景技术
量子点发光二极管(QD-OLED)技术是结合了电致发光二极管以及量子点光致发光的一种显示技术。QD-OLED技术利用电致发光二极管产生蓝光激发红/绿量子点形成全彩显示，具有广色域，广视角等优异的性能，视为大尺寸OLED的潜在技术。
如图1所示，为现有的一种量子点发光二极管显示面板的结构示意图，量子点发光二极管显示面板90包括从下至上依次层叠设置的阵列基板91、蓝光电致发光二极管92、封装层93、填充胶层94、量子点光致转换层95以及彩膜层96。量子点光致转换层95包括由量子点材料构成的红色像素951和绿色像素952，通过利用蓝光电致发光二极管92产生的蓝光及环境光(在图1中用箭头表示)激发量子点转换发射出红光/绿光。
技术问题
由于量子点材料存在散射，且量子点发光二极管显示面板90整体膜材间折射与反射现象使得红光/绿光出光效率低，使得其亮度及使用寿命降低。同时，由于环境光的影响，量子点发光二极管显示面板90在暗态时的对比度较差。
因此，需要寻求一种新型的显示面板以解决上述问题。
技术解决方案
本发明的一个目的是提供一种显示面板，其能够解决现有的量子点发光二极管显示面板存在出光效率低、亮度低及在暗态时的对比度较差等问题。
为了实现上述目的，本发明的一个实施方式提供了一种显示面板，包括发光基板、封装层以及彩膜基板；所述发光基板设有发光层；所述封装层设于所述发光基板上；所述彩膜基板与所述发光基板相对设置；所述封装层中具有至少一第一纳米叠层，用以反射所述彩膜基板发出的光线，所述第一纳米叠层包 括层叠设置的第一无机层和第一有机层，所述第一有机层的折射率小于所述第一无机层的折射率。
进一步的，当所述封装层仅具有一层第一纳米叠层时，所述第一无机层的折射率为n 1，所述第一无机层的厚度为d 1，所述第一有机层的折射率为n 2，所述第一有机层的厚度为d 2；所述封装层反射光线的波长为λ 1，满足λ 1＝2×(n 1×d 1+n 2×d 2)。
进一步的，所述彩膜基板发出的光线为红光和/或绿光。
进一步的，所述彩膜基板包括基层、缓冲层以及量子点光致转换层；所述缓冲层设于所述基层上，所述缓冲层中具有至少一第二纳米叠层，用以反射所述发光基板发出的光；所述量子点光致转换层设于所述缓冲层朝向所述发光基板的表面上；所述第二纳米叠层包括层叠设置的第二无机层和第二有机层，所述第二有机层的折射率小于所述第二无机层的折射率。
进一步的，当所述缓冲层仅具有一层第二纳米叠层时，所述第二无机层的折射率为n 3，所述第二无机层的厚度为n 3，所述第二有机层的折射率为n 4，所述第二有机层的厚度为d 4；所述缓冲层反射光线的波长为λ 2，满足λ 2＝2×(n 3×d 3+n 4×d 4)。
进一步的，所述发光基板发出的光线为蓝光。
进一步的，所述彩膜基板还包括彩膜层，设于所述量子点光致转换层远离所述发光基板的表面上，所述彩膜层中具有若干开口，部分开口中填充色阻单元，色阻单元为红色色阻单元和绿色色阻单元中的一种；所述缓冲层设于所述色阻单元上和所述开口中。
进一步的，所述量子点光致转换层设有量子点光致转换单元，所述发光层中具有若干发光单元，所述量子点光致转换单元与所述发光单元相对设置；所述量子点光致转换单元包括红光量子点转换单元和绿光量子点转换单元；所述红光量子点转换单元对应的设于所述红色色阻单元上，所述绿光量子点转换单元对应的设于所述绿光色阻单元上。
进一步的，所述量子点光致转换层的厚度范围为20nm-100nm。
进一步的，所述发光基板包括基板、薄膜晶体管层、第一电极、像素阻挡层、所述发光层以及第二电极；所述薄膜晶体管层设置于所述基板上；所述第 一电极相互间隔设置于所述薄膜晶体管层上；所述像素阻挡层设置于相邻所述第一电极之间的所述薄膜晶体管层上；所述发光层设置于相邻所述像素阻挡层之间的第一电极上；所述第二电极设置于所述蓝光发光层以及所述像素阻挡层上。
有益效果
本发明涉及一种显示面板，一方面，本发明通过在所述封装层中具有至少一第一纳米叠层，用以反射所述彩膜基板发出的光线，具体为红光和/或绿光，可以减少红光量子点转换单元和绿光量子点转换单元因散射造成的光损失，提高出光效率；另一方面，本发明还通过在所述缓冲层中具有至少一第二纳米叠层，用以反射所述发光基板发出的光，具体为蓝光，即可以阻挡环境光对器件的影响，又可以与第二电极形成反射光路，使得蓝光多次进入所述量子点光致转换单元被利用，从而提高了蓝光的利用效率，能够解决现有的量子点发光二极管显示面板存在出光效率低、亮度低及在暗态时的对比度较差等问题。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有的一种量子点发光二极管显示面板的结构示意图。
图2是本发明实施例1的显示面板结构示意图。
图3是本发明实施例1的所述封装层的结构示意图。
图4是本发明实施例2的所述彩膜基板的结构示意图。
图5是本发明实施例2的显示面板的结构示意图。
图6是本发明实施例2的所述缓冲层的结构示意图。
图7是本发明实施例3的显示面板的结构示意图。
图中部件标识如下：
100、显示面板，
1、发光基板，2、封装层，3、彩膜基板，4、填充胶层，
10、发光层，11、基板，12、薄膜晶体管层，13、第一电极，
14、像素阻挡层，15、第二电极，101、发光单元，
21、第一纳米叠层，211、第一无机层，212、第一有机层，
31、基层，32、缓冲层，33、量子点光致转换层，34、彩膜层，
321、第二纳米叠层，3211、第二无机层，3212、第二有机层，
331、量子点光致转换单元，3311、红光量子点转换单元，
3312、绿光量子点转换单元，332、黑色挡墙，
341、色阻单元，342、黑色矩阵，
3411、红色色阻单元，3412、绿色色阻单元。
本发明的实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图2、图3所示，本发明第一实施例中提供了一种显示面板100，包括 发光基板1、封装层2以及彩膜基板3；所述发光基板1设有发光层10，用于提供光源，优选的，所述发光层10发出的光包括蓝光；所述封装层2设于所述发光基板1上，为无机层和有机层交叠的结构，可以有效避免水氧侵袭；所述彩膜基板3与所述发光基板1相对设置；所述封装层2中具有至少一第一纳米叠层21，用以反射所述彩膜基板3发出的光线，所述第一纳米叠层21包括层叠设置的第一无机层211和第一有机层212，所述第一有机层212的折射率小于所述第一无机层211的折射率。具体的，所述彩膜基板3上包括量子发光材料可接受蓝光发出红光和/或绿光。
如图3所示，本实施例中，当所述封装层2仅具有一层第一纳米叠层21时，所述第一无机层211的折射率为n 1，所述第一无机层211的厚度为d 1，所述第一有机层212的折射率为n 2，所述第一有机层212的厚度为d 2；所述封装层2反射光线的波长为λ 1，满足λ 1＝2×(n 1×d 1+n 2×d 2)。其中的d 1、d 2范围优选为5nm-325nm，更优选为50nm、100nm、150nm、200nm、250nm、300nm。
本实施例中，所述彩膜基板3发出的光线为红光和/或绿光。本实施例通过在所述封装层2中具有至少一第一纳米叠层21，用以反射所述彩膜基板3发出的红光和/或绿光，可以减少因散射造成的光损失，提高出光效率；能够解决现有的量子点发光二极管显示面板100存在出光效率低、亮度低及在暗态时的对比度较差等问题。
如图3所示，可以理解的是，当所述封装层2具有多层所述第一纳米叠层21时，为其层叠结构；每一所述第一纳米叠层21对应反射红光和/或绿光中某一波长的光线，多层层叠的所述第一纳米叠层21共同实现反射红光和/或绿光的效果。波长为380nm-780nm的电磁波为可见光，其中红光640nm-780nm、橙光640nm-610nm、黄光610nm-530nm、绿光505nm-525nm、蓝光505nm-470nm、紫光470nm-380nm，若所述封装层2用于反射红光，则将红光的波长范围划分为若干段，取每一段的中间值为公式λ 1＝2×(n 1×d 1+n 2×d 2)中的λ 1值，从而可计算得出厚度d 1、d 2的值。
其中，本实施例所述第一无机层211和所述第一有机层212的材料和对应的折射率值请参考表1所示。
Figure PCTCN2019129272-appb-000001
表1
如图2所示，本实施例中，所述发光基板1包括基板11、薄膜晶体管层12、第一电极13、像素阻挡层14、所述发光层10以及第二电极15；所述薄膜晶体管层12设置于所述基板11上；所述第一电极13相互间隔设置于所述薄膜晶体管层12上；所述像素阻挡层14设置于相邻所述第一电极13之间的所述薄膜晶体管层12上；所述发光层10设置于相邻所述像素阻挡层14之间的第一电极13上；所述第二电极15设置于所述蓝光发光层10以及所述像素阻挡层14上。优选的，所述第一电极13为阳极，所述第二电极15为阴极。
如图2所示，本实施例中，所述显示面板100还包括填充胶层4，设于所述彩膜基板3与所述发光基板1之间，用于连接所述彩膜基板3与所述发光基板1并填充两者之间的缝隙。
实施例2
如图4、图5、图6所示，在第二实施例中包括第一实施例中全部的技术特征，其区别在于，第二实施例中的所述彩膜基板3包括基层31、缓冲层32以及量子点光致转换层33；所述缓冲层32设于所述基层31上，所述缓冲层32中具有至少一第二纳米叠层321，用以反射所述发光基板1发出的光；所述量子点光致转换层33设于所述缓冲层32朝向所述发光基板1的表面上；所述第二纳米叠层321包括层叠设置的第二无机层3211和第二有机层3212，所述第二有机层3212的折射率小于所述第二无机层3211的折射率。
如图6所示，本实施例中，当所述缓冲层32仅具有一层第二纳米叠层321时，所述第二无机层3211的折射率为n 3，所述第二无机层3211的厚度为n 3，所述第二有机层3212的折射率为n 4，所述第二有机层3212的厚度为d 4；所述缓冲层32反射光线的波长为λ 2，满足λ 2＝2×(n 3×d 3+n 4×d 4)。其中的d 3、d 4范围优选为5nm-325nm，更优选为50nm、100nm、150nm、200nm、250nm、300nm。
本实施例中，所述发光基板1发出的光线为蓝光。本实施例通过在所述缓冲层32中具有至少一第二纳米叠层321，用以反射所述发光基板1发出的蓝光，即可以阻挡环境光对器件的影响，又可以与第二电极15形成反射光路，使得蓝光多次进入所述量子点光致转换层33被利用，从而提高了蓝光的利用效率，能够解决现有的量子点发光二极管显示面板存在出光效率低、亮度低及在暗态时的对比度较差等问题。
如图6所示，可以理解的是，当所述缓冲层32具有多层所述第二纳米叠层321时，为其层叠结构；其反射蓝光的原理和第一实施例中反射红光和/或绿光的原理相同，且所述第二无机层3211和所述第二有机层3212的材料和对应的折射率值也请参考表1所示，在此不做赘述。
如图4、图5所示，本实施例中，所述彩膜基板3还包括彩膜层34，设于所述量子点光致转换层33远离所述发光基板1的表面上，所述彩膜层34中具有若干开口，部分开口中填充色阻单元341，色阻单元341为红色色阻单元3411和绿色色阻单元3412中的一种；所述缓冲层32设于所述色阻单元341上和所述开口中。可以理解的是，所述彩膜层34的主体部分为黑色矩阵342，与所述发光基板1的像素阻挡层14对应设置，在所述黑色矩阵342对应所述发光层10位置设置所述开口，在部分所述开口中填充所述色阻单元341。
本实施例中，所述量子点光致转换层33设有量子点光致转换单元331，所述发光层10中具有若干发光单元101，所述量子点光致转换单元331与所述发光单元101相对设置；所述量子点光致转换单元331包括红光量子点转换单元3311和绿光量子点转换单元3312；所述红光量子点转换单元3311对应的设于所述红色色阻单元3411上，所述绿光量子点转换单元3312对应的设于所述绿光色阻单元3412上。这样便于所述红光量子点转换单元3311和所述绿光量子点转换单元3312发出的光线通过所述彩膜层34中的色阻单元341。同 时可以理解的是，在所述量子点光致转换层33对应所述彩膜层34的黑色矩阵342位置设置黑色挡墙332，用于遮光。
实施例3
如图7所示，本发明第三实施例包括第二实施例中大部分的技术特征，其区别在于，第三实施例中不需要设置所述彩膜层34，仅需所述量子点光致转换层33的厚度范围为20nm-100nm即可节省所述彩膜层34，从而提高了面板亮度，同时可阻隔环境光对所述量子点光致转换单元331与所述发光层10造成劣化。
其原理为所述彩膜层34的作用是将多余的其他颜色的光过滤掉，以获得纯净的单色光。目前所述量子点光致转换层33的厚度可以做到10nm左右，还需要制作所述彩膜层34；当所述量子点光致转换层33比较厚时，例如大于等于20nm，就可以将多余的蓝光全部吸收掉，这样就不需要制作所述彩膜层34了。本实施例所述量子点光致转换层33的厚度优选为21nm、22nm、23nm、24nm、25nm、26nm、27nm、28nm、29nm、30nm、40nm、50nm、60nm、70nm、80nm、90nm。
本发明通过在所述封装层2中具有至少一第一纳米叠层21，用以反射所述彩膜基板3发出的光线，具体为红光和/或绿光，可以减少红光量子点转换单元3311和绿光量子点转换单元3312因散射造成的光损失，提高出光效率；另一方面，本发明还通过在所述缓冲层32中具有至少一第二纳米叠层321，用以反射所述发光基板1发出的光，具体为蓝光，即可以阻挡环境光对器件的影响，又可以与第二电极15形成反射光路，使得蓝光多次进入所述量子点光致转换单元331被利用，从而提高了蓝光的利用效率，能够解决现有的量子点发光二极管显示面板100存在出光效率低、亮度低及在暗态时的对比度较差等问题。
以上对本发明所提供的显示面板100进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精 神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种显示面板，其中包括：
    发光基板，设有发光层；
    封装层，设于所述发光基板上；以及
    彩膜基板，与所述发光基板相对设置；
    所述封装层中具有至少一第一纳米叠层，用以反射所述彩膜基板发出的光线，所述第一纳米叠层包括层叠设置的第一无机层和第一有机层，所述第一有机层的折射率小于所述第一无机层的折射率。
  2. 根据权利要求1所述的显示面板，其中当所述封装层仅具有一层第一纳米叠层时，所述第一无机层的折射率为n 1，所述第一无机层的厚度为d 1，所述第一有机层的折射率为n 2，所述第一有机层的厚度为d 2；所述封装层反射光线的波长为λ 1，满足λ 1＝2×(n 1×d 1+n 2×d 2)。
  3. 根据权利要求1所述的显示面板，其中所述彩膜基板发出的光线为红光和/或绿光。
  4. 根据权利要求1所述的显示面板，其中所述彩膜基板包括：
    基层；
    缓冲层，设于所述基层上，所述缓冲层中具有至少一第二纳米叠层，用以反射所述发光基板发出的光；以及
    量子点光致转换层，设于所述缓冲层朝向所述发光基板的表面上；
    所述第二纳米叠层包括层叠设置的第二无机层和第二有机层，所述第二有机层的折射率小于所述第二无机层的折射率。
  5. 根据权利要求4所述的显示面板，其中当所述缓冲层仅具有一层第二纳米叠层时，所述第二无机层的折射率为n 3，所述第二无机层的厚度为n 3，所述第二有机层的折射率为n 4，所述第二有机层的厚度为d 4；所述缓冲层反射光线的波长为λ 2，满足λ 2＝2×(n 3×d 3+n 4×d 4)
  6. 根据权利要求5所述的显示面板，其中所述发光基板发出的光线为蓝光。
  7. 根据权利要求4所述的显示面板，其中所述彩膜基板还包括：
    彩膜层，设于所述量子点光致转换层远离所述发光基板的表面上，所述彩 膜层中具有若干开口，部分开口中填充色阻单元，色阻单元为红色色阻单元和绿色色阻单元中的一种；
    所述缓冲层设于所述色阻单元上和所述开口中。
  8. 根据权利要求7所述的显示面板，其中
    所述量子点光致转换层设有量子点光致转换单元，所述发光层中具有若干发光单元，所述量子点光致转换单元与所述发光单元相对设置；
    所述量子点光致转换单元包括红光量子点转换单元和绿光量子点转换单元；所述红光量子点转换单元对应的设于所述红色色阻单元上，所述绿光量子点转换单元对应的设于所述绿光色阻单元上。
  9. 根据权利要求4所述的显示面板，其中所述量子点光致转换层的厚度范围为20nm-100nm。
  10. 根据权利要求1所述的显示面板，其中所述发光基板包括：
    基板；
    薄膜晶体管层，其设置于所述基板上；
    第一电极，其相互间隔设置于所述薄膜晶体管层上；
    像素阻挡层，其设置于相邻所述第一电极之间的所述薄膜晶体管层上；
    所述发光层，其设置于相邻所述像素阻挡层之间的第一电极上；以及
    第二电极，其设置于所述蓝光发光层以及所述像素阻挡层上。
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