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WO2021077294A1 - 掩模板及其制作方法、有机发光装置 - Google Patents

掩模板及其制作方法、有机发光装置 Download PDF

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Publication number
WO2021077294A1
WO2021077294A1 PCT/CN2019/112545 CN2019112545W WO2021077294A1 WO 2021077294 A1 WO2021077294 A1 WO 2021077294A1 CN 2019112545 W CN2019112545 W CN 2019112545W WO 2021077294 A1 WO2021077294 A1 WO 2021077294A1
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WO
WIPO (PCT)
Prior art keywords
opening
vertex
edge
side edge
mask
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Application number
PCT/CN2019/112545
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English (en)
French (fr)
Inventor
徐鹏
邓江涛
嵇凤丽
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/970,785 priority Critical patent/US11917893B2/en
Priority to PCT/CN2019/112545 priority patent/WO2021077294A1/zh
Priority to CN201980002060.8A priority patent/CN113016073A/zh
Publication of WO2021077294A1 publication Critical patent/WO2021077294A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0015—Production of aperture devices, microporous systems or stamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the embodiments of the present disclosure relate to a mask plate, a manufacturing method thereof, and an organic light-emitting device (OLED).
  • OLED organic light-emitting device
  • Organic light-emitting display devices have the advantages of self-luminescence, fast response, wide viewing angle, high brightness, bright colors, lightness and thinness, etc., and therefore become an important display technology.
  • the organic light-emitting display device can be prepared by ink-jet printing, vapor deposition and other methods.
  • the evaporation method has the advantages of simple operation, easy control of film thickness, and easy realization of doping.
  • a mask is required in the process of preparing an organic light emitting display device using thin film evaporation.
  • the mask plate usually includes a mask pattern, and the mask pattern is used as a mask during evaporation to form a corresponding thin film pattern on the substrate to be evaporated.
  • At least one embodiment of the present disclosure provides a method for manufacturing a mask plate.
  • the method includes: providing a substrate; using an etching method to form a first opening and a second opening in the substrate, the first opening It includes a first side edge and a second side edge that extend linearly.
  • the extension line of the first side edge and the extension line of the second side edge intersect at a first vertex to form the first side of the first opening.
  • the second opening is located at the first vertex and protrudes outward, and the edge of the second opening intersects the first side and the second side, thereby Communicate with the first opening; the first opening and the second opening are used for vapor deposition on the display area of the organic light-emitting device, and the second opening is used for the top of the display area. Corner evaporation compensation.
  • the etching method is wet etching, and the second opening is further configured to perform etching compensation for the first vertex angle.
  • the maximum vertical distance from the edge of the second opening to the extension line of the first side is approximately equal to 40-60 microns
  • the maximum vertical distance from the edge of the second opening to the extension line of the second side is approximately equal to 40-60 microns.
  • the extension line of the first side and the extension line of the second side intersect substantially perpendicularly.
  • the edge of the second opening intersects the first side at a first intersection and intersects with the second side at a second intersection.
  • the first intersection and the second intersection extend to the The distances of the first vertices are approximately equal.
  • the etching method includes exposure using a photolithography mask
  • the photolithography mask includes a first pattern for forming the first opening and a second pattern for forming the second opening.
  • the shape of the second pattern is a part of a circle, a regular polygon, or an irregular polygon.
  • the circle is centered on the first vertex.
  • At least one embodiment of the present disclosure provides a mask, including: a substrate and first and second openings formed on the substrate, the first opening including a first side and a first side extending linearly Two sides, the extension line of the first side and the extension line of the second side intersect at a first vertex to form a first vertex angle of the first opening, and the second opening is located At the first vertex corner and protruding outward, the edge of the second opening intersects the first side and the second side, thereby communicating with the first opening,
  • the first opening and the second opening are used for vapor deposition on the display area of the organic light emitting device, and the second opening is used for vapor deposition compensation for the top corner of the display area.
  • the maximum vertical distance from the edge of the second opening to the first side is approximately equal to 40-60 microns
  • the maximum vertical distance from the edge of the second opening to the second side is approximately equal to 40-60 microns.
  • the extension line of the first side and the extension line of the second side intersect substantially perpendicularly.
  • the edge of the second opening intersects the first side at a first intersection and intersects with the second side at a second intersection.
  • the first intersection and the second intersection extend to the The distances of the first vertices are approximately equal.
  • At least one embodiment of the present disclosure provides an organic light emitting device, including: a display area and a peripheral area, wherein the display area includes a functional layer, the functional layer having the first opening and the peripheral area corresponding to the mask.
  • the shape of the second opening has a top corner boundary of the second opening.
  • the functional layer is at least one of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a capping layer, or a common electrode layer.
  • Figure 1 shows a schematic diagram of the rounded corner problem caused by the photolithography process
  • 2A to 2D respectively show schematic diagrams of the actual light-emitting process of each pixel (white light, red light, green light, blue light) when the top corner margin is insufficient;
  • Fig. 3 shows a front view of a mask according to at least one embodiment of the present disclosure
  • FIG. 4 shows a partial enlarged view of the mask plate shown in FIG. 3;
  • Fig. 5 shows a partial enlarged view of a photolithography mask according to at least one embodiment of the present disclosure
  • Fig. 6 shows a partial enlarged view of a photolithography mask according to another embodiment of the present disclosure
  • FIG. 7 shows a partial enlarged view of a photolithography mask according to another embodiment of the present disclosure.
  • FIG. 8 shows a partial enlarged view of a photolithography mask according to still another embodiment of the present disclosure
  • Figures 9 to 12 show a method for manufacturing a mask in a cross-section taken along the line B-B in Figure 3;
  • FIG. 13 shows a schematic diagram of a manufacturing method of an organic light-emitting device according to at least one embodiment of the present disclosure.
  • the evaporation method is one of the commonly used methods for thin film deposition.
  • a mask will be used.
  • Organic light-emitting diode display panels have become more and more popular in the market due to a series of advantages such as autonomous light emission, low power consumption, high display brightness, wide viewing angle, and fast response speed.
  • the organic light-emitting layer and the functional layer in the organic light-emitting diode display panel for example, can usually be formed by an evaporation method.
  • margin alignment Accuracy + evaporation shadow.
  • the opening portion of the corresponding mask plate is also a rectangle.
  • the mask can be made by a photolithography process using a metal plate, for example, by wet etching.
  • wet etching will form rounded corners at the top corners of the rectangular area due to its isotropic characteristics, so that compared to the straight line segments of the rectangular area, the margins at the top corners will be significantly reduced.
  • the thickness of the mask is 100 microns
  • the radius of rounded corners caused by etching is about 150 microns
  • the radius of rounded corners caused by etching is about 200 microns.
  • the top corner pixels will have insufficient margins, causing the thickness of the functional layer (such as the common cathode layer, etc.) formed by evaporation to be not guaranteed, so that the pixels in the non-edge part of the display area will display the same gray When the first-order data signal shows the dark phenomenon.
  • the functional layer such as the common cathode layer, etc.
  • FIGS. 2A to 2D respectively show a schematic diagram of the actual light-emitting process of each pixel (white light, red light, green light, and blue light) when the top corner margin is insufficient.
  • the dotted line indicates the top corner pixel, which is also called Dark pixels, and other light-emitting pixels are pixels formed under normal margin.
  • the letters in the pixel icons represent different pixel colors. For example, R represents red light pixels, B represents blue light pixels, G represents green light pixels, and white light pixels are composed of RGB three kinds of pixels.
  • the solid-color icons indicate normal pixels, and the shaded icons indicate dark pixels.
  • the luminous intensity of the corner pixels (dark pixels) formed due to insufficient margins is less than the luminous intensity of the normal pixels, for example, less than about 30%-50% of the luminous intensity of the normal pixels. Therefore, it is necessary to increase the top corner pixel margin to form a uniform light-emitting area.
  • At least one embodiment of the present disclosure provides a method for manufacturing a mask and the mask obtained therefrom.
  • the method includes: providing a substrate; using an etching method to form a first opening and a second opening in the substrate, wherein the first opening includes a first side and a second side extending linearly, The extension line of the first side and the extension line of the second side intersect at a first vertex to form a first vertex angle of the first opening, and the second opening is located at the first vertex.
  • the edge of the second opening intersects the first side and the second side, thereby communicating with the first opening; the first opening
  • the second opening and the second opening are used for vapor deposition on the display area of the organic light-emitting device, and the second opening is used for vapor deposition compensation for the top corner of the display area.
  • the top corner pixel margin can be increased, and the vapor deposition uniformity of the display area can be improved, thereby improving the display quality of the display area.
  • the photolithography mask includes: a first pattern for forming a first opening and a mask for forming a first opening. A second pattern of the second opening is formed.
  • the mask 100 includes a substrate 1 and a first opening 2 and a second opening 3 formed on the substrate.
  • the mask 100 may include a plurality of first opening portions 2 and a second opening portion 3 for each first opening portion 2.
  • each first opening 2 corresponds to the display area of the display panel to be prepared, so the mask 100 can be used to prepare multiple display panels at the same time.
  • These display panels are used in portable electronic devices (such as mobile phones, smart phones, etc.). Watches, etc.) display panels.
  • the shape of the first opening 2 is rectangular in this embodiment.
  • the first opening 2 can also be designed in other regular or irregular shapes according to actual needs, for example, an irregular shape with a protrusion in the middle of the top end.
  • the mask plate 100 can be further combined with a frame or the like to obtain an evaporation assembly.
  • the mask plate 100 can be welded to the frame through an edge portion (for example, a welding portion of the edge portion), and the frame provides support.
  • FIG. 4 is a partial enlarged view of part A in FIG. 3.
  • the first opening 2 includes a first side 4 and a second side 5 extending linearly.
  • the extension line of the first side 4 and the extension line of the second side 5 perpendicularly intersect the first vertex 6 to form a first The first vertex angle of the opening 2.
  • the first vertex 6 may be located on the actual edge, or may also be located in the second opening, which is a virtual vertex angle at this time.
  • the angle of the first vertex angle is 90 degrees.
  • the first apex angle can also be designed as another angle according to the shape of the first opening 2, such as an acute angle or an obtuse angle, and the angle of the first apex angle depends on the shape of the first opening 2.
  • the first opening portion 2 may also include a second vertex, a third vertex, and a fourth vertex that are the same as the first vertex at other vertices.
  • the description is mainly for the first vertex angle, and the structure of other vertex angles can be derived by analogy.
  • the second opening 3 is located at the first vertex and protrudes outward, and the edges of the second opening 3 intersect with the first side 4 respectively, thereby communicating with the first opening 2.
  • the first opening portion 2 and the second opening portion 3 are used for vapor deposition of the display area of the organic light emitting device, and the second opening portion 3 is used for vapor deposition compensation for the top corner of the display area.
  • the edge of the second opening 3 intersects the first side 4 at the first intersection 41, and the second side 5 intersects at the second intersection 51, so that the second opening 3 communicates with the first opening 2 .
  • the distance between the first intersection 41 and the first vertex 6 is approximately equal to the distance between the second intersection 51 and the first vertex 6, that is, the two parts of the second opening 3 are approximately symmetrical along the bisector of the first vertex 6, Taking into account the error of the actual processing technology, the present disclosure is not limited to this.
  • the distance between the first point of intersection 41 and the first vertex 6 may not be equal to the distance between the second point of intersection 51 and the first vertex 6.
  • extension line of the first side 4 and the extension line of the second side 5 intersect approximately perpendicularly, as shown in FIG. 4.
  • the second opening portion 3 extends outward with respect to the first opening portion 2 in a direction perpendicular to the first side 4 and the second side 5, respectively.
  • the edge of the second opening 3 is a combination of an arc part and a straight part, and the arc part passes through the first vertex 6.
  • the arc part may not pass the first vertex 6. It is only necessary to ensure that the radial distance between the first vertex 6 and the arc part is within 5 microns. can.
  • the maximum vertical distance from the edge of the second opening 3 to the first side 4 is defined as h1
  • the maximum vertical distance from the edge of the second opening 3 to the second side 5 is h2, h1 and h2.
  • the range is 40 microns to 60 microns.
  • the edge of the second opening 3 needs to be kept within a reasonable range, so that the over-etched portion only affects the area and thickness of the functional layer in a small range, and prevents significant impact on the display panel.
  • the shape of the first pattern 7 of the photolithography mask is the same as the shape and size of the first opening 2 of the mask 100, and only a part of the first pattern 7 is shown here.
  • the shape of the second pattern 8 may be a part of a circle, a regular polygon, or an irregular polygon.
  • the shape of the second pattern 8 is a 3/4 circle, the radius R is 50 microns, and the first vertex 6 is the center of the circle.
  • the present disclosure is not limited to this.
  • the second pattern 8 can also be fan-shaped, or the radius of the second pattern 8 can be 40-60 microns, and corresponding adjustments and modifications can be made according to actual process requirements, for example, in the above range
  • the fluctuation is about 10-20%.
  • the shape of the second pattern 8 is a 3/4 square, the side length of the square is 50 microns, and the center of the square is the first vertex 6.
  • the present disclosure is not limited to this.
  • the side length of the second pattern 8 can range from 40 to 60 microns, and corresponding adjustments and modifications can be made according to actual process requirements.
  • the shape of the second pattern 8 is an irregular polygon, including adjacent sides parallel to the first side 4 and the second side 5, and respectively connected to the first side 4 and The opposite sides of the second side 5 intersecting.
  • the two opposite sides are parallel to each other and extend at an angle of 45 degrees with the first side 4 and the second side 5 respectively.
  • the length of the adjacent two sides is 25 micrometers, and the horizontal (or vertical) distance of the opposite two sides is 25 micrometers.
  • the present disclosure is not limited to this.
  • the shape of the second pattern 8 can be adjusted and modified according to actual process requirements. For example, it can be combined based on the examples shown in FIGS. 5-7. One possible modification is 8.
  • the shape of the second pattern 8 is a combination of the opposite sides in FIG. 7 and a semicircle with a radius of 25 microns.
  • the above shows several examples of the shape of the photolithography mask used to make the mask 100 by the etching method, and the above shapes are intended to form the second opening 3 to compensate for the rounded corners generated by the top corner etching. Therefore, based on the inventive concept of the embodiments of the present disclosure, those skilled in the art can easily think of other shapes of the second pattern 8 extending outwardly on the top corners of the rectangle.
  • a substrate 1 is provided.
  • the material of the substrate 1 include Invar alloy, nickel-iron alloy or other suitable materials.
  • the thickness of the substrate 1 may range from 80 microns to 200 microns. This is not limited.
  • a photoresist layer can be deposited on the substrate 1, using the above-mentioned photolithography mask, and patterning the photoresist layer through a photolithography process including an exposure process and a development process to form a pattern on the substrate 1.
  • a photoresist pattern 9 is formed.
  • the photoresist pattern 9 exposes the first pattern 7 and the second pattern 8 to be formed on the substrate 1.
  • the first pattern 7 and the second pattern 8 of the substrate 1 are etched by using the above-mentioned photoresist pattern 9 as an etching mask.
  • the substrate 1 An opening is formed thereon, and the opening includes the first opening 2 and the second opening 3 as described above.
  • the number of openings may be multiple, for example, four.
  • the first opening portion 2 and the second opening portion 3 are used for vapor deposition of the display area of the organic light emitting device, and the second opening portion 3 is used for vapor deposition compensation for the top corner of the display area.
  • the etching process is wet etching
  • the second opening 3 may also be configured to perform etching compensation for the first vertex angle of the first opening 2.
  • the photoresist pattern 9 is removed by a lift-off process, thereby forming the mask 100 as shown in FIG. 12.
  • an organic light emitting device 200 and a manufacturing method thereof according to at least one embodiment of the present disclosure will be introduced with reference to FIG. 13.
  • the organic light emitting device 200 includes a display area and a peripheral area.
  • the display area includes a functional layer.
  • the functional layer has a shape corresponding to the first opening portion 2 and the second opening portion 3 of the aforementioned mask 100, and has a second opening portion 3. Top corner boundary.
  • the organic light emitting device 200 is an organic light emitting diode display device, and the display device includes an active area including a plurality of sub-pixels arranged in an array, and each sub-pixel includes an organic light emitting diode and a driving circuit.
  • the organic light emitting diode has a cathode, a light emitting layer, an anode, etc., and may further include a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a capping layer, and the like as necessary.
  • the mask 100 may be used to form a certain functional layer of the organic light-emitting device.
  • the functional layer is at least one of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a capping layer, or a common electrode layer, such as a common electrode layer (common cathode layer).
  • the method for manufacturing the organic light emitting device 200 is introduced by using the mask plate 100 as an example.
  • the mask plate 100 is disposed on the evaporation surface of the organic light emitting device 200 to be evaporated.
  • the mask plate 100 includes a shielding portion 101 and an opening portion 102.
  • the opening portion 102 is an opening structure, for example, the opening portion
  • the shape of 102 can be defined by the first opening portion 2 and the second opening portion 3 of the mask 100.
  • the vapor deposition source 300 is disposed on the side facing the vapor deposition surface of the organic light emitting device 200.
  • the evaporated material is evaporated to the corresponding opening 102 of the organic light emitting device 200 through the mask opening area of the mask plate 100.
  • the area where the organic light emitting device 200 is blocked by the blocking portion 101 of the mask 100 will not be formed with vapor deposition material.
  • the original top corner margin is improved, and a uniform vapor deposition thickness can be formed, thereby forming a uniform pixel light-emitting area.

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Abstract

公开了一种掩模板(100)及其制作方法、有机发光装置(200)的制备方法，该掩模板(100)包括基板(1)和形成于所述基板(1)上的第一开口部(2)和第二开口部(3)，所述第一开口部(2)包括直线延伸的第一侧边(4)和第二侧边(5)，所述第一侧边(4)的延伸线和所述第二侧边(5)的延伸线相交于第一顶点(6)，以构成所述第一开口部(2)的第一顶角，所述第二开口部(3)位于所述第一顶角处且向外凸出，所述第二开口部(3)的边缘与所述第一侧边(4)和所述第二侧边(5)相交，由此与所述第一开口部(2)相通，所述第一开口部(2)和所述第二开口部(3)用于对有机发光装置(200)的显示区进行蒸镀，所述第二开口部(3)用于对所述显示区的顶角蒸镀补偿。

Description

掩模板及其制作方法、有机发光装置 技术领域
本公开的实施例涉及一种掩模板及其制作方法、有机发光装置(organic light-emitting device,OLED)。
背景技术
有机发光显示装置具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点，因此成为一种重要的显示技术。有机发光显示装置可以采用喷墨打印、蒸镀等方法进行制备。蒸镀方法具有操作简单、膜厚容易控制以及易于实现掺杂等优点。在使用薄膜蒸镀制备有机发光显示装置的过程中，为了在像素区域等特定位置蒸镀特定的材料，需要使用掩模板。掩模板上通常包括掩模图案，在蒸镀时以该掩模图案作为掩模，可在待蒸镀的基板上形成相应的薄膜图案。
发明内容
本公开的至少一实施例提供一种掩模板的制作方法，该方法包括：提供基板；采用刻蚀方法，在所述基板中形成第一开口部和第二开口部，所述第一开口部包括直线延伸的第一侧边和第二侧边，所述第一侧边的延伸线和所述第二侧边的延伸线相交于第一顶点，以构成所述第一开口部的第一顶角，所述第二开口部为位于所述第一顶角处且向外凸出，所述第二开口部的边缘与所述第一侧边和所述第二侧边相交，由此与所述第一开口部相通；所述第一开口部和所述第二开口部用于对有机发光装置的显示区进行蒸镀，所述第二开口部用于对所述显示区的顶角蒸镀补偿。
在一些示例中，所述刻蚀方法为湿法刻蚀，所述第二开口部还配置为对所述第一顶角进行刻蚀补偿。
在一些示例中，所述第二开口部的边缘到所述第一侧边的延伸线的最大垂直距离约等于40～60微米，
在一些示例中，所述第二开口部的边缘到所述第二侧边的延伸线的最大垂直距离约等于40～60微米。
在一些示例中，所述第一侧边的延伸线和所述第二侧边的延伸线大致垂直 相交。
在一些示例中，所述第二开口部的边缘与第一侧边相交于第一交点且与所述第二侧边相交于第二交点，所述第一交点和所述第二交点到所述第一顶点的距离大致相等。
在一些示例中，所述刻蚀方法包括使用光刻掩模板进行曝光，
所述光刻掩模板包括用于形成所述第一开口部的第一图案和用于形成所述第二开口部的第二图案。
在一些示例中，所述第二图案的形状为圆形、规则多边形或非规则多边形的一部分。
在一些示例中，所述圆形以所述第一顶点为圆心。
本公开的至少一实施例提供一种掩模板，包括：基板和形成于所述基板上的第一开口部和第二开口部，所述第一开口部包括直线延伸的第一侧边和第二侧边，所述第一侧边的延伸线和所述第二侧边的延伸线相交于第一顶点，以构成所述第一开口部的第一顶角，所述第二开口部位于所述第一顶角处且向外凸出，所述第二开口部的边缘与所述第一侧边和所述第二侧边相交，由此与所述第一开口部相通，所述第一开口部和所述第二开口部用于对有机发光装置的显示区进行蒸镀，所述第二开口部用于对所述显示区的顶角蒸镀补偿。
在一些示例中，所述第二开口部的边缘到所述第一侧边的最大垂直距离约等于40～60微米，
所述第二开口部的边缘到所述第二侧边的最大垂直距离约等于40～60微米。
在一些示例中，所述第一侧边的延伸线和所述第二侧边的延伸线大致垂直相交。
在一些示例中，所述第二开口部的边缘与第一侧边相交于第一交点且与所述第二侧边相交于第二交点，所述第一交点和所述第二交点到所述第一顶点的距离大致相等。
本公开的至少一实施例提供一种有机发光装置，包括：显示区和周边区，其中，所述显示区包括功能层，所述功能层具有对应于上述掩模板的所述第一开口部和所述第二开口部的形状，且具有所述第二开口部的顶角边界。
在一些示例中，所述功能层为空穴注入层、空穴传输层、电子注入层、电子传输层、封盖层或公共电极层中的至少一种。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1示出了光刻工艺产生圆角问题的示意图；
图2A至图2D分别示出了当顶角边距不足时各个像素(白光、红光、绿光、蓝光)的实际发光过程的示意图；
图3示出了根据本公开至少一实施例的掩模板的正面视图；
图4示出了图3所示的掩模板的局部放大图；
图5示出了根据本公开至少一实施例的光刻掩模板的局部放大图；
图6示出了根据本公开另一实施例的光刻掩模板的局部放大图；
图7示出了根据本公开又一实施例的光刻掩模板的局部放大图；
图8示出了根据本公开再一实施例的光刻掩模板的局部放大图；
图9至图12示出了根据图3中的B-B线截取的剖面的掩模板的制作方法；
图13示出了根据本公开至少一实施例的有机发光装置的制备方法的示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的 或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
蒸镀方法是薄膜沉积常用的方法之一，在薄膜蒸镀过程中，为了形成具有一定图案的薄膜层，将会使用掩模板。有机发光二极管显示面板由于具有自主发光、功耗低、显示亮度高、宽视角、响应速度快等一系列的优点，越来越受到市场的欢迎。有机发光二极管显示面板中的有机发光层和功能层，例如通常可以通过蒸镀方法形成。
由于掩模板的对位精度和蒸镀阴影(EV shadow)等的影响，所述掩模板在设计时需要预留一定的边距(margin)，边距的设计满足以下关系：边距＝对位精度+蒸镀阴影。
在待制备的显示面板的显示区域的形状例如为矩形的情况下，其对应的掩模板的开口部分也为矩形。该掩模板可以使用金属板通过光刻工艺制成，例如通过湿法刻蚀。但是，湿法刻蚀由于其各向同性的特性会在矩形区域的顶角位置形成圆角，使得相比于矩形区域的直线段，在顶角位置处的边距会明显减小。通常而言，当掩模板的厚度为100微米时，刻蚀造成的圆角半径R＝150微米左右，当掩模板的厚度为150微米时，刻蚀造成的圆角半径R＝200微米左右，当掩模板的厚度为200微米时，刻蚀造成的圆角半径R＝250微米左右。
刻蚀圆角对边距的影响如图1所示，当直线区域边距为120微米时，刻蚀圆角R＝200微米时，顶角可用的边距为86.9微米。在相同的掩模板对位精度和蒸镀阴影的情况下，依据上述公式，假设掩模板对位精度和蒸镀阴影之和等于直线边距(即，120微米)，此时顶角边距仅有86.9微米，明显小于直线边距。在相同的工艺条件下，顶角像素会由于边距不足，造成蒸镀形成的功能层(例如公共阴极层等)厚度得不到保证，从而相对于显示区域非边缘部分的像素在显示相同灰阶数据信号时表现出发暗现象。
图2A至图2D分别示出了当顶角边距不足时各个像素(白光、红光、绿光、蓝光)的实际发光过程的示意图，虚线框线内表示的是顶角像素，也称为暗像素，其余发光像素为正常边距下形成的像素。在图2A至图2D中，像素图示中的字母代表不同的像素颜色，例如R代表红光像素、B代表蓝光像素、G代表绿光像素，白光像素由RGB三种像素构成。此外，纯色图示表示的是正常像素，阴影图示表示的是暗像素。在四种颜色的发光像素的发光图中，由 于边距不足形成的顶角像素(暗像素)的发光强度均小于正常像素发光强度，例如小于正常像素发光强度的大致30％-50％。因此，需要增加顶角像素边距以形成均匀发光区域。
本公开的至少一实施例提供了一种掩模板的制作方法以及由此得到的掩模板。该方法包括：提供基板；采用刻蚀方法，在所述基板中形成第一开口部和第二开口部，其中，所述第一开口部包括直线延伸的第一侧边和第二侧边，所述第一侧边的延伸线和所述第二侧边的延伸线相交于第一顶点，以构成所述第一开口部的第一顶角，所述第二开口部为位于所述第一顶角处且向外凸出，所述第二开口部的边缘与所述第一侧边和所述第二侧边相交，由此与所述第一开口部相通；所述第一开口部和所述第二开口部用于对有机发光装置的显示区进行蒸镀，所述第二开口部用于对所述显示区的顶角蒸镀补偿。
通过上述实施例的制作方法所得到的掩模板，在用于制备有机发光装置时，可以增加顶角像素边距，改善显示区域的蒸镀均匀性，由此提高了显示区域的显示质量。
本公开的另一些实施例还提供了一种光刻掩模板，用于执行上述制作方法以及形成上述掩模板，该光刻掩模板包括：用于形成第一开口部的第一图案和用于形成第二开口部的第二图案。
下面结合具体的附图对本公开的各个实施例进行说明。
本公开的至少一实施例提供一种掩模板100，如图3和图4所示，该掩模板100包括基板1和形成于基板上的第一开口部2和第二开口部3。
例如，掩模板100可以包括多个第一开口部2以及用于每个第一开口部2的第二开口部3。例如，每个第一开口部2对应于将要制备的显示面板的显示区域，因此该掩模板100可以用于同时制备多个显示面板，这些显示面板例如是用于便携式电子设备(例如手机、智能手表等)的显示面板。第一开口部2的形状在本实施例中为矩形。第一开口部2也可以根据实际需要，设计为其他规则或非规则形状，例如顶端中间具有突起部的非规则形状。
在使用中，可以将该掩模板100进一步与边框等结合以得到蒸镀组件，例如可以将掩模板100通过边缘部分(例如边缘部分的焊接部)焊接在边框上，由边框提供支撑。
为了更清楚地表示第一开口部2的顶角和第二开口部3的形状，图4为图3中A部分的局部放大图。第一开口部2包括直线延伸的第一侧边4和第二侧 边5，第一侧边4的延伸线和第二侧边5的延伸线垂直相交于第一顶点6，以构成第一开口部2的第一顶角。需要注意的是，第一顶点6可以位于实际的边缘上，或者也可以位于第二开口部内，此时为虚拟的顶角。在本实施例中，第一顶角的角度为90度。第一顶角也可以根据第一开口部2的形状设计为其他角度，如锐角或钝角，第一顶角的角度大小取决于第一开口部2的形状。
类似地，第一开口部2还可以在其他顶点包括与第一顶角相同的第二顶角、第三顶角和第四顶角。在此为了简明叙述，主要针对第一顶角进行描述，其他顶角的结构可以类推得到。
如图4所示，第二开口部3位于第一顶角处且向外凸出，第二开口部3的边缘分别与第一侧边4相交，由此与第一开口部2相通。第一开口部2和第二开口部3用于对有机发光装置的显示区进行蒸镀，第二开口部3用于对显示区的顶角蒸镀补偿。
例如，第二开口部3的边缘分别与第一侧边4相交于第一交点41、和第二侧边5相交于第二交点51，由此第二开口部3与第一开口部2相通。该示例中，第一交点41与第一顶点6的距离大致等于第二交点51与第一顶点6的距离，即第二开口部3的两部分沿第一顶角6的平分线大致对称，考虑到实际加工工艺的误差，本公开并不以此为限。第一交点41与第一顶点6的距离也可以不等于第二交点51与第一顶点6的距离。
例如，第一侧边4的延伸线和第二侧边5的延伸线大致垂直相交，如图4所示。
在本实施例中，第二开口部3分别沿垂直于第一侧边4和第二侧边5的方向相对于第一开口部2向外延伸。本实施例中，第二开口部3的边缘为弧线部分和直线部分的组合，并且弧线部分经过第一顶点6。考虑到实际加工工艺的误差，本公开并不以此为限，弧线部分也可以不经过第一顶点6，只需要保证第一顶点6距离弧线部分的径向距离在5微米之内即可。
如图4所示，定义第二开口部3的边缘到第一侧边4的最大垂直距离为h1，第二开口部3的边缘到第二侧边5的最大垂直距离为h2，h1和h2的范围是40微米至60微米。这种配置主要是考虑到为了对掩模板100的刻蚀圆角部分进行补偿，需要在制作时对掩模板100进行过刻蚀，以补偿圆角部分同时增加边距，但过刻蚀的范围不能过大，不然会产生面积较大的第二开口部3，从而影响后续蒸镀功能层的面积和厚度。因此第二开口部3的边缘需要保持在合理的 范围内，使得过刻蚀部分只在小范围内影响功能层的面积和厚度，防止对显示面板造成显著影响。在一个示例中，所制作的掩模板100的示例尺寸为：h1＝51微米、h2＝42微米。
下面将结合图5至图8介绍通过刻蚀方法制作掩模板100所用的光刻掩模板的各种示例性形状。
为简化描述，以下将针对形成第二开口部的光刻掩模板的第二图案8的设计进行介绍。光刻掩模板的第一图案7的形状与掩模板100的第一开口部2的形状和尺寸相同，在此仅示出第一图案7的局部。
第二图案8的形状可以是圆形、规则多边形或非规则多边形的一部分。例如，如图5所示，第二图案8的形状为3/4圆，半径R为50微米，并且以第一顶点6为圆心。本公开并不以此为限，第二图案8也可以是扇形，或者第二图案8的半径范围可以是40-60微米，并且可以根据实际工艺需求做出相应调整和修改，例如在上述范围上下浮动约10-20％。
例如，如图6所示，第二图案8的形状为3/4正方形，正方形的边长为50微米，并且正方形的中心为第一顶点6。本公开并不以此为限，第二图案8的边长范围可以是40-60微米，并且可以根据实际工艺需求做出相应调整和修改。
例如，如图7所示，第二图案8的形状为非规则多边形，包括分别平行于第一侧边4和第二侧边5的相邻两侧边，以及分别与第一侧边4和第二侧边5相交的相对两侧边。该相对的两侧边互相平行，并与第一侧边4和第二侧边5分别呈45度夹角延伸。该相邻两侧边的长度为25微米，该相对两侧边的水平(或垂直)距离为25微米。本公开并不以此为限，第二图案8的形状可以根据实际工艺需求做出相应调整和修改，例如可以基于图5-图7所示的示例进行组合，一种可能的变型例如为图8，第二图案8的形状为图7中的相对两侧边和半径为25微米的半圆的组合。
以上示出了用于通过刻蚀方法制作掩模板100所用的光刻掩模板的形状的几种示例，以上形状旨在形成第二开口部3以补偿顶角刻蚀产生的圆角。因此在本公开实施例的发明构思的基础上，本领域技术人员容易想到设置在矩形顶角上向外延伸的其他的第二图案8的形状。
下面将结合图9至图12介绍根据本公开至少一实施例的掩模板100的制作方法。
首先，如图9所示，提供基板1，该基板1的材料的示例包括因瓦合金、 镍铁合金或其它适合的材料，该基板1的厚度范围可以是80微米至200微米，本实施例对此不做限定。
如图10所示，例如可以在基板1上沉积光刻胶层，使用上述的光刻掩模板，通过包括曝光工序以及显影工序的光刻法处理对光刻胶层构图，以在基板1上形成光刻胶图案9。光刻胶图案9暴露出基板1上将要形成的第一图案7和第二图案8。
如图11所示，利用上述光刻胶图案9作为蚀刻掩模对基板1的第一图案7和第二图案8进行刻蚀，通过控制刻蚀时间、刻蚀速率等因素，以在基板1上形成开口部，该开口部包括如上所述的第一开口部2和第二开口部3。该开口部可以为多个，例如四个。第一开口部2和第二开口部3用于对有机发光装置的显示区进行蒸镀，第二开口部3用于对显示区的顶角蒸镀补偿。
例如，该刻蚀工艺为湿法刻蚀，第二开口部3还可以配置为对第一开口部2的第一顶角进行刻蚀补偿。
最后采用剥离工艺去除该光刻胶图案9，从而形成如图12所示的掩模板100。
下面将结合图13介绍根据本公开至少一实施例的有机发光装置200及其制备方法。
有机发光装置200包括显示区和周边区，显示区包括功能层，功能层具有对应于前述的掩模板100的第一开口部2和第二开口部3的形状，且具有第二开口部3的顶角边界。
例如，该有机发光装置200为有机发光二极管显示装置，该显示装置包括有源区域，该有源区域包括阵列排布的多个子像素，每个子像素包括有机发光二极管以及驱动电路。有机发光二极管具有阴极、发光层、阳极等，并且根据需要还可以包括空穴注入层、空穴传输层、电子注入层、电子传输层、封盖层等。
例如，本公开的一个实施例中，可以使用掩模板100形成有机发光装置的某一功能层。该功能层为空穴注入层、空穴传输层、电子注入层、电子传输层、封盖层或公共电极层等之中的至少一种，例如公共电极层(公共阴极层)。本实施例以使用掩模板100为例对有机发光装置200的制备方法进行介绍。
如图13所示，掩模板100设置在待要蒸镀的有机发光装置200的蒸镀面上，掩模板100包括遮挡部101和开口部102，开口部102为开口结构，例如， 该开口部102的形状可以由掩模板100的第一开口部2和第二开口部3进行界定，具体实施方式可参见前述实施例描述的内容，本实施例在此不再赘述。蒸镀源300设置在朝向有机发光装置200蒸镀面的一侧。
例如，如图13所示，当蒸镀源300对有机发光装置200的蒸镀面蒸镀材料时，蒸镀材料通过掩模板100的掩模开口区蒸镀到有机发光装置200对应开口部102的区域上，而有机发光装置200被掩模板100的遮挡部101遮挡的区域不会有蒸镀材料形成。在本实施例中，通过在掩模板100上的第二开口部3的设计，原有的顶角边距得到改善，可以形成均匀的蒸镀厚度，从而形成均匀的像素发光区域。
本实施例提供的制备方法的其它技术效果可参见上述实施例描述的掩模板的技术效果，在此不再赘述。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (15)

  1. 一种掩模板的制作方法，包括：
    提供基板；
    采用刻蚀方法，在所述基板中形成第一开口部和第二开口部，
    其中，所述第一开口部包括直线延伸的第一侧边和第二侧边，所述第一侧边的延伸线和所述第二侧边的延伸线相交于第一顶点，以构成所述第一开口部的第一顶角，
    所述第二开口部为位于所述第一顶角处且向外凸出，所述第二开口部的边缘与所述第一侧边和所述第二侧边相交，由此与所述第一开口部相通；
    所述第一开口部和所述第二开口部用于对有机发光装置的显示区进行蒸镀，所述第二开口部用于对所述显示区的顶角蒸镀补偿。
  2. 如权利要求1所述的方法，其中，所述刻蚀方法为湿法刻蚀，所述第二开口部还配置为对所述第一顶角进行刻蚀补偿。
  3. 如权利要求1或2所述的方法，其中，所述第二开口部的边缘到所述第一侧边的延伸线的最大垂直距离约等于40～60微米。
  4. 如权利要求1-3任一所述的方法，其中，所述第二开口部的边缘到所述第二侧边的延伸线的最大垂直距离约等于40～60微米。
  5. 如权利要求1-4任一所述的方法，其中，所述第一侧边的延伸线和所述第二侧边的延伸线大致垂直相交。
  6. 如权利要求1-5任一所述的方法，其中，所述第二开口部的边缘与第一侧边相交于第一交点且与所述第二侧边相交于第二交点，所述第一交点和所述第二交点到所述第一顶点的距离大致相等。
  7. 如权利要求1所述的方法，其中，所述刻蚀方法包括使用光刻掩模板进行曝光，
    所述光刻掩模板包括用于形成所述第一开口部的第一图案和用于形成所述第二开口部的第二图案。
  8. 如权利要求6所述的方法，其中，所述第二图案的形状为圆形、规则多边形或非规则多边形的一部分。
  9. 如权利要求8所述的方法，其中，所述圆形以所述第一顶点为圆心。
  10. 一种掩模板，包括：
    基板；和
    形成于所述基板上的第一开口部和第二开口部，
    其中，所述第一开口部包括直线延伸的第一侧边和第二侧边，所述第一侧边的延伸线和所述第二侧边的延伸线相交于第一顶点，以构成所述第一开口部的第一顶角，
    所述第二开口部位于所述第一顶角处且向外凸出，所述第二开口部的边缘与所述第一侧边和所述第二侧边相交，由此与所述第一开口部相通，
    所述第一开口部和所述第二开口部用于对有机发光装置的显示区进行蒸镀，所述第二开口部用于对所述显示区的顶角蒸镀补偿。
  11. 如权利要求10所述的掩模板，其中，所述第二开口部的边缘到所述第一侧边的最大垂直距离约等于40～60微米，
    所述第二开口部的边缘到所述第二侧边的最大垂直距离约等于40～60微米。
  12. 如权利要求10或11所述的掩模板，其中，所述第一侧边的延伸线和所述第二侧边的延伸线大致垂直相交。
  13. 如权利要求10-12任一所述的掩模板，其中，所述第二开口部的边缘与第一侧边相交于第一交点且与所述第二侧边相交于第二交点，所述第一交点和所述第二交点到所述第一顶点的距离大致相等。
  14. 一种有机发光装置，包括：显示区和周边区，其中，所述显示区包括功能层，所述功能层具有对应于如权利要求10-13中任一项所述的掩模板的所述第一开口部和所述第二开口部的形状，且具有所述第二开口部的顶角边界。
  15. 如权利要求14所述的有机发光装置，其中，所述功能层为空穴注入层、空穴传输层、电子注入层、电子传输层、封盖层或公共电极层中的至少一种。
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