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WO2020140762A1 - 像素界定层及显示面板的制作方法、显示面板 - Google Patents

像素界定层及显示面板的制作方法、显示面板 Download PDF

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Publication number
WO2020140762A1
WO2020140762A1 PCT/CN2019/126370 CN2019126370W WO2020140762A1 WO 2020140762 A1 WO2020140762 A1 WO 2020140762A1 CN 2019126370 W CN2019126370 W CN 2019126370W WO 2020140762 A1 WO2020140762 A1 WO 2020140762A1
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WO
WIPO (PCT)
Prior art keywords
manufacturing
defining layer
initial pattern
pixel defining
display panel
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Application number
PCT/CN2019/126370
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English (en)
French (fr)
Inventor
张时涛
熊黎
唐成
张�浩
赵齐君
杨和坪
薛高亮
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/968,017 priority Critical patent/US11587994B2/en
Publication of WO2020140762A1 publication Critical patent/WO2020140762A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing

Definitions

  • the present application relates to the field of display technology, and in particular, to a method for manufacturing a pixel defining layer, a method for manufacturing a display panel, and a display panel.
  • the light-emitting layer is mainly formed in the opening area of the pixel defining layer through an organic material evaporation process. After manufacturing the light-emitting layer, an inkjet printing process needs to be performed on the light-emitting layer to realize thin film packaging.
  • the purpose of the present application is to provide a method for manufacturing a pixel defining layer, a method for manufacturing a display panel, and a display panel.
  • a first aspect of the present application provides a method for manufacturing a pixel defining layer, which includes:
  • a second exposure process and a curing process are sequentially performed on the initial pattern to form a final pattern of the pixel defining layer.
  • performing the second exposure process on the initial pattern includes:
  • a second exposure treatment is performed on the initial pattern using an I-line ultraviolet lamp.
  • the light intensity of the I-line ultraviolet lamp is 120 mW/cm 2 to 250 mW/cm 2 .
  • the method before the pre-baking treatment of the thin film of lithography material, the method further includes:
  • the vacuum drying process includes a plurality of processing stages, and the pressure of each of the processing stages decreases sequentially.
  • the pressure of the last processing stage among the plurality of processing stages is 300 Pa to 700 Pa.
  • the total time for the vacuum drying process is 110s-130s.
  • the thickness of the lithographic material film is 1.8 ⁇ m to 4.5 ⁇ m.
  • the second aspect of the present application provides a method for manufacturing a display panel, including:
  • the pixel-defining layer being manufactured by the method for manufacturing a pixel-defining layer according to any one of the above
  • An encapsulation layer is formed on the light-emitting layer.
  • the encapsulation layer includes an organic encapsulation film
  • the forming an encapsulation layer on the light-emitting layer includes:
  • An organic packaging film is formed on the light-emitting layer using an inkjet printing process.
  • a third aspect of the present application provides a display panel, which is manufactured by using the above-mentioned manufacturing method of the display panel.
  • FIG. 1 shows a flowchart of a method for manufacturing a pixel defining layer according to the implementation of this application.
  • FIG. 2 shows a schematic diagram after completing step S100
  • FIG. 3 shows a schematic diagram after step S102 is completed
  • FIG. 4 shows a schematic diagram after completing step S104
  • FIG. 5 shows a comparison diagram of the test results of the pixel defining layer made by the three embodiments
  • FIG. 6 shows a comparison diagram of the test results of the pixel defining layer made by the other two embodiments.
  • the commonly used method is to increase the printing thickness during the inkjet printing process, but this will lead to an increase in the potential risk of bad products, and the material cost and process time will also increase , Which makes the production capacity drop.
  • the slope angle of the pixel defining layer affects the inkjet printing process, that is, excessive slope angle of the pixel defining layer makes ink leveling difficult during the inkjet printing process, which is prone to Mura phenomenon, therefore, In order to improve the Mura phenomenon, it can be achieved by reducing the slope angle of the pixel defining layer.
  • the pixel defining layer may be formed by performing a lithography process on a lithography material. Therefore, in order to reduce the slope angle of the pixel defining layer, it may be achieved by improving the lithography conditions.
  • the photolithography process generally includes five steps of coating, pre-baking, exposure, development, and curing. Therefore, in order to reduce the slope angle of the pixel definition layer, the following solutions can be used:
  • the first scheme in the glue coating process, the thickness of the lithography material film can be reduced, thereby reducing the slope angle of the pixel defining layer, but this scheme requires higher thickness of the lithography material film because the lithography material Too much reduction in the thickness of the film may cause new defects and product reliability problems, and less thickness reduction is not enough to improve the Mura phenomenon. Therefore, to achieve the improvement of the Mura phenomenon, it is necessary to avoid new defects and product reliability problems. It is difficult to achieve only by reducing the thickness of the photolithographic material film.
  • the second scheme during the exposure process, the exposure defocus of the pattern edge can be increased to improve the exposure effect and reduce the slope angle of the pixel defining layer.
  • the slope of the pixel defining layer The angle can be reduced from 47.8° to 32.2°.
  • the baking temperature can be increased, for example, the baking temperature can be increased from 250°C to 270°C, so that although the slope angle of the pixel defining layer can be reduced, the slope angle decreases Smaller, not enough to improve the Mura phenomenon.
  • energy consumption is increased, which results in a reduction in the baking equipment utilization rate, which reduces the production capacity, and has a certain effect on the stability and uniformity of the chamber temperature in the baking equipment.
  • the fourth scheme adjust the structure of the mask used in the exposure process and the development process to reduce the slope angle of the pixel-defining layer, for example: adjust the Mask line edge semi-transparent design (Halftone), adjust the Mask on Pattern design, adjustment of SRAF (Sub Resolution Assist Feature, sub-resolution auxiliary feature) structure design, etc., but this requires redesigning Mask and verifying its effectiveness, which will lead to a substantial increase in cost and cycle.
  • adjust the Mask line edge semi-transparent design Halftone
  • SRAF Sub Resolution Assist Feature
  • sub-resolution auxiliary feature sub-resolution auxiliary feature
  • the embodiments of the present application provide a method for manufacturing a pixel defining layer.
  • the manufacturing method of the pixel defining layer is part of the manufacturing process of the display panel.
  • the manufacturing method of the hole injection layer, the light emitting layer, etc. is not the focus of this application, so it will not be described in detail here.
  • the manufacturing method of the pixel defining layer may include:
  • Step S100 forming a thin film of lithography material on the substrate
  • Step S102 Perform a pre-bake process, a first exposure process, and a development process on the lithographic material film in sequence to form an initial pattern of the pixel defining layer;
  • Step S104 Perform a second exposure process and a curing process on the initial pattern successively to form a final pattern of the pixel defining layer.
  • the initial pattern of the pixel defining layer is formed by sequentially performing a pre-bake process, an exposure process (ie, a first exposure process) and a development process on the lithographic material film formed on the substrate , And before the initial pattern is cured, the initial pattern is subjected to an exposure process (ie: second exposure process) to decompose the photosensitizer in the initial pattern, that is, the chain-like macromolecules are decomposed into small molecules,
  • an exposure process ie: second exposure process
  • the fluidity of the lithography material during the curing process can be increased to correct the edge profile of the initial pattern of the pixel defining layer, so that the slope angle of the final pattern of the formed pixel defining layer is reduced. Since the slope angle of the finally formed pixel defining layer is reduced, the ink can be more easily leveled during the inkjet printing process, which can improve the Mura phenomenon and ensure product quality.
  • step S100 a lithographic material film 30 is formed on the substrate 10, as shown in FIG.
  • the substrate 10 may be a flexible substrate.
  • the substrate 10 may have a single-layer structure or a multi-layer structure.
  • the lithography material may be coated on the substrate 10 by spin coating to form the lithography material film 30, but not limited thereto.
  • the photolithography material may be a positive photolithography material, for example: PI (Polyimide, polyimide) glue, but not limited to this; the photolithography material may also be a negative photolithography material.
  • the thickness of the lithographic material film 30 may be 1.8 ⁇ m to 4.5 ⁇ m, for example: 1.8 ⁇ m, 2.5 ⁇ m, 3.0 ⁇ m, 3.5 ⁇ m.
  • the thickness of the lithographic material film 30 by controlling the thickness of the lithographic material film 30 within this range, on the one hand, it can alleviate new defects and product reliability problems caused by the lithographic material film 30 being too thin, on the other hand, it can cooperate with the subsequent mentioned
  • the photolithographic material film 30 is vacuum-dried and the second exposure process is performed on the initial pattern 300 of the pixel-defining layer to further reduce the slope angle of the pixel-defining layer, that is, to make the final pattern 301 of the pixel-defining layer The slope angle is reduced.
  • step S102 the lithographic material film 30 is sequentially subjected to a pre-bake process, a first exposure process, and a development process to form an initial pattern 300 of the pixel defining layer, as shown in FIG. 3.
  • step S102 may specifically include step S1021, step S1022, and step S1023, where:
  • step S1021 the photolithography material film 30 is pre-baked.
  • the substrate 10 on which the lithographic material film 30 is formed can be placed in a baking device for drying treatment to promote the evaporation of the solvent in the lithographic material film 30 and dry the lithographic material film 30, thereby enhancing its adhesion And wear resistance.
  • the method may further include: Step S1020, performing a vacuum drying process on the lithographic material film 30.
  • the substrate 10 on which the lithographic material film 30 is formed may be placed in a vacuum drying (Vacuum Drying, abbreviated as VCD) device for drying treatment to promote the volatilization of the solvent in the lithographic material film 30 to make the lithographic material film 30 dry.
  • VCD vacuum drying
  • the pressure in the vacuum drying equipment affects the rate of solvent volatilization in the lithographic material film 30, that is, the smaller the pressure, the faster the rate of solvent volatilization; otherwise, the greater the pressure, the solvent volatilizes The slower the rate.
  • the vacuum drying process in this embodiment may include multiple processing stages, and the pressure of each processing stage is sequentially reduced to ensure that the solvent volatilization rate is gradually accelerated, thereby ensuring that the solvent in the photolithography material film 30 is uniformly volatilized. In turn, the uniformity of the thickness of the photolithographic material film 30 can be ensured.
  • the pressure in the vacuum drying equipment is not easy to be too small, because it will cause the solvent in the lithographic material film 30 to quickly evaporate, thereby reducing the fluidity of the lithographic material film 30 in the subsequent pre-baking process.
  • This is not conducive to making the initial pattern 300 with a small slope angle. Therefore, in order to ensure the drying effect of the lithographic material film 30 and to produce an initial pattern 300 with a small slope angle, in this embodiment, the pressure of each processing stage in the vacuum drying process can be increased, and in particular, it needs to be increased.
  • the bottom pressure of the vacuum drying equipment This bottom pressure is the pressure of the last processing stage among the multiple processing stages of the vacuum drying process.
  • the bottom pressure of the vacuum drying device may be 300Pa-700Pa, such as: 300Pa, 400Pa, 500Pa, 600Pa, 700Pa.
  • This can reduce the volatilization rate of the solvent in the lithographic material film 30 during the vacuum drying process, thereby increasing the fluidity of the lithographic material film 30 during the subsequent pre-baking process to reduce the thickness of the lithographic material film 30
  • the thickness uniformity of the lithographic material film 30 is ensured, so that the initial pattern 300 with a small slope angle can be conveniently produced later.
  • the total time in the vacuum drying process can also be appropriately increased.
  • This total time can be in the range of 110s to 130s, which can make the pressure change in the vacuum drying process more smooth, thus It can ensure that the solvent in the lithographic material film 30 is uniformly volatilized, and then the uniformity of the thickness of the lithographic material film 30 can be ensured.
  • the vacuum drying process was adjusted from 26Pa in the related technology to 500Pa, and the total working time was adjusted from 104s in the related technology to 120s.
  • the steps of the pre-baking process and the vacuum drying process may also be omitted.
  • the first exposure process is performed on the dried lithographic material film 30.
  • the light of a specific wavelength can be passed through the mask plate to perform the first exposure process on the thin film 30 of lithographic material, so that the pattern on the mask plate is transferred onto the thin film 30 of lithographic material.
  • the light of this specific wavelength may be ultraviolet light, but not limited to this.
  • step S1023 the exposed photolithographic material film 30 is subjected to development processing.
  • the photosensitive area of the positive lithography material or the non-photosensitive area of the negative lithography material will be dissolved in the developer.
  • the material of the lithography material film 30 is PI
  • the photosensitive area of the lithographic material film 30 will be dissolved in the developer.
  • step S104 the initial pattern 300 is successively subjected to a second exposure process and a curing process to form a final pattern 301 of the pixel defining layer, as shown in FIG. 4.
  • step S104 may specifically include step S1041 and step S1042, where:
  • a second exposure process is performed on the initial pattern 300 of the pixel defining layer.
  • the initial pattern 300 may be exposed a second time using an I-line ultraviolet lamp.
  • the wavelength of this I-line UV lamp is 365 nm.
  • the light intensity of the I-line ultraviolet lamp can be 120mW/cm 2 ⁇ 250mW/cm 2 , such as: 120mW/cm 2 , 160mW/cm 2 , 200mW/cm 2 , 250mW/cm 2 , so that the pixel definition layer
  • the photosensitizer in the initial pattern 300 is decomposed, that is, the chain-like macromolecules are decomposed into small molecules, which can increase the fluidity of the lithography material during the curing process to correct the edge profile of the initial pattern 300 of the pixel defining layer, so that the formed pixels are defined
  • the slope angle of the final pattern 301 of the layer is reduced. Since the slope angle of the final pattern 301 of the pixel defining layer is reduced, the in
  • the second exposure process may use a photomask that exposes at least the side surface of the initial pattern 300 so that the I-line ultraviolet lamp can illuminate at least the side surface of the initial pattern 300, thereby increasing the photolithography material during the curing process To adjust the edge profile of the initial pattern 300 of the pixel defining layer, so that the slope angle of the final pattern 301 of the formed pixel defining layer is reduced.
  • the photomask used in the second exposure process may completely expose the initial pattern 300.
  • the second exposure process may not use a photomask, but directly illuminate the initial pattern 300 with an I-line ultraviolet lamp.
  • the light intensity of the I-line UV lamp is controlled at 120mW/cm 2 ⁇ It should be within the range of 250mW/cm 2 .
  • step S1042 the initial pattern 300 of the exposed pixel defining layer is cured to form the final pattern 301 of the pixel defining layer, that is, the production of the pixel defining layer is completed.
  • the initial pattern 300 of the exposed pixel-defining layer can be cured by a convection heating furnace.
  • the heating temperature can be around 250°C to completely evaporate the solvent in the initial pattern 300 to avoid contamination of subsequent ions
  • this solvent may be the solvent of the lithography material itself or the developer.
  • the final pattern 301 of the formed pixel-defining layer can be a hard film to improve the protection of the lower surface of the final pattern 301 of the pixel-defining layer during subsequent etching ability.
  • FIG. 5 shows a comparison diagram of the test results of the pixel defining layer made by the three embodiments, specifically:
  • the first embodiment is: when making the pixel defining layer, the bottom pressure of the vacuum drying process is 26 Pa, and the I-line ultraviolet lamp used for the second exposure process is not turned on, that is, the initial pattern 300 is not formed after the initial pattern 300 is formed. The pattern 300 is exposed.
  • the result of testing the product produced by this embodiment is: the left slope angle of the pixel defining layer is 47.2°, and the right slope angle is 49.7°. And five samples cut from a product were tested, and the average value of the slope angle of the pixel defining layer was 47.8°.
  • the second embodiment is: when making the pixel defining layer, the bottom pressure of the vacuum drying process is 26 Pa, and the I-line ultraviolet lamp used for the second exposure process is turned on, that is, the initial pattern 300 is formed after the initial pattern 300 is formed Perform exposure processing.
  • the result of testing the product produced by this embodiment is: the left slope angle of the pixel defining layer is 32.6°, and the right slope angle is 32.1°. And the five samples cut from one product were tested, and the average value of the slope angle of the pixel defining layer was 33.2°.
  • the third embodiment is: when manufacturing the pixel defining layer, the bottom pressure of the vacuum drying process is adjusted to 500 Pa, and the I-line ultraviolet lamp used for the second exposure process is turned on, that is, the initial pattern is formed after the initial pattern 300 is formed 300 for exposure processing.
  • the result of testing the product produced by this embodiment is: the left slope angle of the pixel defining layer (ie, the final pattern 301) is 29.7°, and the right slope angle is 30.6°. And the five samples cut from one product were tested, and the average value of the slope angle of the pixel defining layer was 30.4°.
  • FIG. 6 shows a comparison diagram of the test results of the pixel definition layer made by the other two embodiments, specifically:
  • the fourth embodiment is: when making the pixel defining layer, the thickness of the lithographic material film 30 is 3.5 ⁇ m, the bottom pressure of the vacuum drying process is 26 Pa, and the I-line ultraviolet lamp used for the second exposure process is turned on, that is : Exposing the initial pattern 300 after forming the initial pattern 300.
  • the result of testing the product produced by this embodiment is: the slope angle of the pixel defining layer is 32.2°.
  • the severity of the Mura phenomenon of the product is also different.
  • the fifth embodiment is: when making the pixel defining layer, the thickness of the lithographic material film 30 is 3 ⁇ m, the bottom pressure of the vacuum drying process is 500 Pa, and the I-line ultraviolet lamp used for the second exposure process is turned on, that is: After the initial pattern 300 is formed, the initial pattern 300 is exposed to light.
  • the result of testing the product produced by this embodiment is: the slope angle of the pixel defining layer is 23.5°. And in this scheme, under different printing thicknesses, as shown in FIG. 6 of 8 ⁇ m, 10 ⁇ m, and 12 ⁇ m, the severity of the Mura phenomenon of the product is also different.
  • L0, L1, and L3 shown in FIG. 6 indicate the severity of the Mura phenomenon of the product, L0 and L1 indicate no Mura or Mura is very slight, and L3 indicates Orange Mura is very serious.
  • this application preferably adopts the fifth embodiment.
  • the slope angle of the pixel defining layer ie, the final pattern 301
  • the slope angle of the pixel defining layer can be less than 25°, which can effectively improve the Mura phenomenon caused by the ink leveling problem, which can be used to improve the back end. RGB dark vertical stripes and mixed colors.
  • this can also reduce the printing thickness of the light-emitting layer appropriately, for example, it can be reduced from the original 12 ⁇ m to 8 ⁇ m, and there is no Mura phenomenon, which can reduce the printing cost and printing time and improve the productivity while ensuring the quality of the product.
  • an embodiment of the present application also provides a method for manufacturing a display panel, including:
  • Step S10 a pixel defining layer is formed on the substrate, and the pixel defining layer is manufactured by using the manufacturing method of the pixel defining layer described in any of the foregoing embodiments;
  • Step S20 forming a light emitting layer in the opening area on the pixel defining layer
  • step S30 an encapsulation layer is formed on the light-emitting layer.
  • the encapsulation layer may include an organic encapsulation film.
  • the forming of the encapsulation layer on the light-emitting layer may include: forming an organic encapsulation film on the light-emitting layer using an inkjet printing process.
  • an embodiment of the present application further provides a display panel, which is manufactured by using the foregoing manufacturing method of the display panel.
  • the display panel may be an OLED (Organic Light-Emitting Diode) display panel, especially an AMOLED display panel, but it is not limited thereto.
  • the manufacturing method of the pixel defining layer provided by the present application, after sequentially performing the pre-baking process, the first exposure process and the developing process on the lithographic material film formed on the substrate to form the initial pattern of the pixel defining layer
  • the initial pattern of the pixel defining layer is subjected to a second exposure process to decompose the sensitizer in the initial pattern, that is, the chain-like macromolecules are decomposed into small molecules, thereby increasing the fluidity of the lithography material during the curing process to correct the pixel defining layer
  • the edge profile of the initial pattern of the pixel reduces the slope angle of the final pattern of the pixel defining layer formed. Since the slope angle of the pixel defining layer is reduced, the ink can be more easily leveled during the subsequent inkjet printing process, which can improve the Mura phenomenon and ensure product quality.

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Abstract

像素界定层的制作方法、显示面板的制作方法及显示面板。该像素界定层的制作方法包括：在基板（10）上形成光刻材料薄膜（30）；对所述光刻材料薄膜（30）依次进行前烘处理、第一曝光处理及显影处理，以形成像素界定层的初始图案（300）；对所述初始图案（300）先后进行第二曝光处理、及固化处理，以形成像素界定层的最终图案（301）。

Description

像素界定层及显示面板的制作方法、显示面板
相关申请的交叉引用
本申请要求于2019年01月03日递交的中国专利申请第201910005631.5号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本申请涉及显示技术领域，具体而言，涉及一种像素界定层的制作方法、显示面板的制作方法及显示面板。
背景技术
目前，在柔性AMOLED(Active-Matrix Organic Light-Emitting Diode，有源矩阵有机发光二极管)工艺中，发光层主要通过有机材料蒸镀工艺形成在像素界定层的开口区。在制造完发光层之后，还需要在发光层上进行喷墨打印工艺，以用于实现薄膜封装。
需要说明的是，在上述背景技术部分公开的信息仅用于加强对本申请的背景的理解，因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
本申请的目的在于提供一种像素界定层的制作方法、显示面板的制作方法及显示面板。
本申请第一方面提供了一种像素界定层的制作方法，其包括：
在基板上形成光刻材料薄膜；
对所述光刻材料薄膜依次进行前烘处理、第一曝光处理及显影处理，以形成像素界定层的初始图案；
对所述初始图案先后进行第二曝光处理、及固化处理，以形成像素界定层的最终图案。
在本申请的一种示例性实施例中，对所述初始图案进行第二曝 光处理，包括：
采用I线紫外灯对所述初始图案进行第二次曝光处理。
在本申请的一种示例性实施例中，所述I线紫外灯的光照强度为120mW/cm 2～250mW/cm 2。
在本申请的一种示例性实施例中，在对所述光刻材料薄膜进行前烘处理之前，还包括：
对所述光刻材料薄膜进行真空干燥处理。
在本申请的一种示例性实施例中，所述真空干燥处理包括多个处理阶段，各所述处理阶段的压强依次减小。
在本申请的一种示例性实施例中，所述多个处理阶段中最后处理阶段的压强为300Pa～700Pa。
在本申请的一种示例性实施例中，所述真空干燥处理中总用时为110s～130s。
在本申请的一种示例性实施例中，所述光刻材料薄膜的厚度为1.8μm～4.5μm。
本申请第二方面提供了一种显示面板的制作方法，其包括：
在基板上形成像素界定层，所述像素界定层采用上述任一项所述的像素界定层的制作方法制作而成；
在所述像素界定层上的开口区形成发光层；
在所述发光层上形成封装层。
在本申请的一种示例性实施例中，所述封装层包括有机封装薄膜，
所述在所述发光层上形成封装层，包括：
采用喷墨打印工艺在所述发光层上形成有机封装薄膜。
本申请第三方面提供了一种显示面板，其采用上述所述的显示面板的制作方法制作而成。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本申请。
本节提供本公开中描述的技术的各种实现或示例的概述，并不是所公开技术的全部范围或所有特征的全面公开。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本申请的实施例，并与说明书一起用于解释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了本申请实施所述的像素界定层的制作方法的流程图。
图2示出了完成步骤S100之后的示意图；
图3示出了完成步骤S102之后的示意图；
图4示出了完成步骤S104之后的示意图；
图5示出了三种实施方案制作出的像素界定层的测试结果的对比图；
图6示出了另两种实施方案制作出的像素界定层的测试结果的对比图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本申请将全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。
虽然本说明书中使用相对性的用语，例如“上”“下”来描述图标的一个组件对于另一组件的相对关系，但是这些术语用于本说明书中仅出于方便，例如根据附图中所述的示例的方向。能理解的是，如果将图标的装置翻转使其上下颠倒，则所叙述在“上”的组件将会成为在“下”的组件。当某结构在其它结构“上”时，有可能是指某结构一体形成于其它结构上，或指某结构“直接”设置在其它结构上，或指某结构通过另一结构“间接”设置在其它结构上。
用语“一个”、“一”、“该”、“所述”用以表示存在一个或多个要素 /组成部分/等；用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等；用语“第一”、“第二”等仅作为标记使用，不是对其对象的数量限制。
目前，在柔性AMOLED工艺中，为了改善Mura现象，常采用的方法为：在喷墨打印工艺时增加打印厚度，但这样会导致产品潜在的不良风险增大，且材料成本和工艺时间也会增加，从而使得产能下降。
另外，由于像素界定层的坡度角会影响喷墨打印工艺，即：像素界定层的坡度角过大会使得在喷墨打印工艺时墨水流平困难，从而容易产生Mura(姆拉)现象，因此，为了改善Mura现象，可采用减小像素界定层的坡度角来实现。
相关技术中，像素界定层可通过对光刻材料进行光刻工艺来形成，因此，为了减小像素界定层的坡度角，可通过改善光刻条件来实现。
其中，光刻工艺一般包括涂胶处理、前烘处理、曝光处理、显影处理、固化处理这五步骤，因此，为减小像素界定层的坡度角，可采用以下几种方案：
第一种方案：在涂胶处理时，可减小光刻材料薄膜的厚度，从而可减小像素界定层的坡度角，但该方案对光刻材料薄膜的厚度要求较高，因为光刻材料薄膜的厚度降低过多可能会引起新的不良及产品信赖问题，而厚度降低较少又不足以改善Mura现象，因此，即要实现改善Mura现象，又要避免引起新的不良及产品信赖问题，仅采用减小光刻材料薄膜的厚度比较难实现。
第二种方案：在曝光处理时，可增加图案边缘的曝光散焦，以改善曝光效果，减小像素界定层的坡度角，例如：在将曝光焦距设置为-4μm时，像素界定层的坡度角可从47.8°降低至32.2°。虽然此方案可有效减小坡度角，但是对于曝光工艺调试和管控难度较大，工艺稳定性无法确保，容易存在像素界定层的图案异常的风险。
第三种方案：在固化处理时，可提高烘烤温度，例如：可将烘 烤温度从250℃提升至270℃，这样虽然可减小像素界定层的坡度角，但是坡度角减小的幅度较小，不足以改善Mura现象。此外，在与正常工艺温度进行切换时会增加能耗，从而导致烘烤设备稼动率减小，降低了产能，而且对烘烤设备中腔室温度稳定性和均一性有一定影响。
第四种方案：调整用于曝光处理和显影处理中的掩膜板(Mask)的结构，以减小像素界定层的坡度角，例如：调整Mask线边缘半透设计(Halftone)、调整Mask上图形(Pattern)设计、调整SRAF(Sub Resolution Assist Feature，次分辨率辅助特征)结构设计等，但这样需要重新设计Mask并验证其有效性，会导致成本及周期大幅度增加。
由上述可知，虽然这些方案都可以减小像素界定层的坡度角，但是或多或少均存在一些问题，例如：坡度角的减小幅度不足以改善Mura现象、工艺稳定性较差、成本高、周期长等。
因此，为了解决上述技术问题，本申请实施例提供了一种像素界定层的制作方法，该像素界定层的制作方法是显示面板的制作过程中的一部分，关于显示面板其他部分的制作，例如：空穴注入层、发光层等的制作方法，不是本申请关注的重点，故在此不做详细介绍。其中，如图1所示，该像素界定层的制作方法，可包括：
步骤S100、在基板上形成光刻材料薄膜；
步骤S102、对光刻材料薄膜依次进行前烘处理、第一曝光处理及显影处理，以形成像素界定层的初始图案；
步骤S104、对初始图案先后进行第二曝光处理、及固化处理，以形成像素界定层的最终图案。
也就是说，本实施例中，通过在对形成在基板上的光刻材料薄膜依次进行前烘处理、曝光处理(即：第一曝光处理)及显影处理，以形成像素界定层的初始图案之后，且在对初始图案进行固化处理之前，又对初始图案进行了一次曝光处理(即：第二曝光处理)，以使初始图案中的感光剂分解，即：链状大分子分解成小分子，从而可增加固化处理时光刻材料的流动性，以修正像素界定层的初始图案的边 缘轮廓，使得形成的像素界定层的最终图案的坡度角减小。由于最终形成的像素界定层的坡度角减小，因此，可使喷墨打印工艺时墨水更易于流平，从而能够改善Mura现象，保证产品质量。
下面结合附图对本申请实施例中提到的像素界定层的制作方法作详细介绍。
在步骤S100中，在基板10上形成光刻材料薄膜30，如图2所示。
详细说明，此基板10可为柔性基板。且该基板10可为单层结构，也可为多层结构。举例而言，可通过旋涂法使光刻材料涂覆在基板10上，以形成光刻材料薄膜30，但不以此为限。
其中，该光刻材料可为正性光刻材料，例如：PI(Polyimide，聚酰亚胺)胶，但不以此为限；该光刻材料也可为负性光刻材料。此外，该光刻材料薄膜30的厚度可为1.8μm～4.5μm，例如：1.8μm、2.5μm、3.0μm、3.5μm。本实施例中，通过将光刻材料薄膜30的厚度控制在此范围内，一方面可缓解光刻材料薄膜30过薄引起新的不良及产品信赖问题，另一方面可配合后续提到的对光刻材料薄膜30进行真空干燥处理及对像素界定层的初始图案300进行第二曝光处理这两步骤，以进一步地减小像素界定层的坡度角，即：使得像素界定层的最终图案301的坡度角减小。
在步骤S102中，对光刻材料薄膜30依次进行前烘处理、第一曝光处理及显影处理，以形成像素界定层的初始图案300，如图3所示。
详细说明，该步骤S102可具体包括步骤S1021、步骤S1022及步骤S1023，其中：
在步骤S1021中，对光刻材料薄膜30进行前烘处理。举例而言，可将形成有光刻材料薄膜30的基板10放入烘烤设备中进行干燥处理，以促进光刻材料薄膜30内溶剂挥发，使光刻材料薄膜30干燥，从而增强其粘附性及耐磨性。
其中，在进行前烘处理时，烘烤温度不宜过高，大约在100℃左右，因为，温度过高虽然能够加快光刻材料薄膜30内溶剂挥发，但 还可能会改变光刻材料薄膜30中其他材料的性质，从而破坏光刻材料薄膜30的性质。因此，为了提高光刻材料薄膜30的干燥效果，本实施例中在对光刻材料薄膜30进行前烘处理之前，还可包括：步骤S1020、对光刻材料薄膜30进行真空干燥处理。举例而言，可将形成有光刻材料薄膜30的基板10放入真空干燥(Vacuum Drying，简称VCD)设备中进行干燥处理，以促进光刻材料薄膜30内溶剂挥发，使光刻材料薄膜30干燥。
需要说明的是，在真空干燥处理中，真空干燥设备内的压强影响光刻材料薄膜30中溶剂挥发的速率，即：压强越小，溶剂挥发的速率越快；反之，压强越大，溶剂挥发的速率越慢。基于此，本实施例中的真空干燥处理可包括多个处理阶段，且各处理阶段的压强依次减小，以保证溶剂挥发的速率逐渐加快，从而可保证光刻材料薄膜30内溶剂均匀挥发，继而可保证光刻材料薄膜30厚度的均一性。
但在真空干燥处理过程中，真空干燥设备中的压强不易过小，因为这样会使得光刻材料薄膜30内溶剂快速挥发，从而降低了后续前烘处理过程中光刻材料薄膜30的流动性，这样不利于制作坡度角较小的初始图案300。因此，为了在保证光刻材料薄膜30的干燥效果的同时，能够制作出坡度角较小的初始图案300，本实施例中，可增大真空干燥处理中各处理阶段的压强，尤其需要增大真空干燥设备的底压强，此底压强为真空干燥处理的多个处理阶段中最后处理阶段的压强。举例而言，该真空干燥设备的底压强可为300Pa～700Pa，如：300Pa、400Pa、500Pa、600Pa、700Pa。这样可降低光刻材料薄膜30内溶剂在真空干燥处理过程中的挥发速度，从而可增加后续前烘处理过程中光刻材料薄膜30的流动性，以在减小光刻材料薄膜30的厚度的同时，保证光刻材料薄膜30的厚度均一性，从而可方便后续制作出坡度角较小的初始图案300。
此外，在增加真空干燥处理中的压强的同时，还可适当增加真空干燥处理中的总用时，此总用时可在110s～130s范围内，这样可使真空干燥处理过程中压强变化更加平缓，从而可保证光刻材料薄膜30内溶剂均匀挥发，继而可保证光刻材料薄膜30厚度的均一性。
举例而言，本实施例中真空干燥处理中各处理阶段的压强和时间的调整如下表所示：
Figure PCTCN2019126370-appb-000001
也就是说，为了降低光刻材料薄膜30内溶剂在真空干燥处理过程中的挥发速度，以增加后续前烘处理过程中光刻材料薄膜30的流动性，本实施例可将真空干燥处理中最终处理阶段的目标压强从相关技术中的26Pa调整到了500Pa，以及将工作总用时从相关技术中的104s调整到了120s。
还应当注意的是，根据本公开的一些实施例，根据具体工艺要求以及所使用的不同光刻材料，也可以省略该前烘处理和真空干燥处理的步骤。
在步骤S1022中，对干燥后的光刻材料薄膜30进行第一曝光处理。详细说明，可使用特定波长的光通过掩膜板以对光刻材料薄膜30进行第一次曝光处理，使得掩膜板上的图案转移到光刻材料薄膜30上。此特定波长的光可为紫外光，但不以此为限。
在步骤S1023中，对曝光后的光刻材料薄膜30进行显影处理。详细说明，通过在曝光过程结束后加入显影液，正光刻材料的感光区或负光刻材料的非感光区会溶解于显影液中，举例而言，在光刻材料薄膜30的材料为PI材料时，该光刻材料薄膜30的感光区会溶解于显影液中。这一步完成后，光刻材料薄膜30中的图形就可以显现出来，即：形成了像素界定层的初始图案300。
在步骤S104中，对初始图案300先后进行第二曝光处理、及固化处理，以形成像素界定层的最终图案301，如图4所示。
详细说明，该步骤S104可具体包括步骤S1041及步骤S1042， 其中：
在步骤S1041中，对像素界定层的初始图案300进行第二曝光处理。举例而言，可采用I线紫外灯对初始图案300进行第二次曝光处理。此I线紫外灯的波长为365nm。且该I线紫外灯的光照强度可为120mW/cm 2～250mW/cm 2，如：120mW/cm 2、160mW/cm 2、200mW/cm 2、250mW/cm 2，这样可使像素界定层的初始图案300中的感光剂分解，即：链状大分子分解成小分子，从而可增加固化处理时光刻材料的流动性，以修正像素界定层的初始图案300的边缘轮廓，使得形成的像素界定层的最终图案301的坡度角减小。由于像素界定层的最终图案301的坡度角减小，因此，可使喷墨打印工艺时墨水更易于流平，从而能够改善Mura现象，保证产品质量。
在本公开的一个实施例中，第二曝光处理可以使用至少暴露初始图案300的侧表面的光掩膜，使得I线紫外灯能够至少照射初始图案300的侧表面，从而增加固化处理时光刻材料的流动性，以修正像素界定层的初始图案300的边缘轮廓，使得形成的像素界定层的最终图案301的坡度角减小。在一个实施例中，第二曝光处理中使用的光掩膜可以完全暴露初始图案300。在另一些实施例中，第二曝光处理可以不使用光掩膜，而使I线紫外灯直接照射初始图案300。
需要说明的是，在I线紫外灯的光照强度达到一定程度后，继续增大光照强度是无法实现坡度角的持续改善的，因此，将I线紫外灯的光照强度控制在120mW/cm 2～250mW/cm 2的范围内即可。
在步骤S1042中，对曝光后的像素界定层的初始图案300进行固化处理，以形成像素界定层的最终图案301，即完成像素界定层的制作。举例而言，可通过对流式加热炉对曝光后的像素界定层的初始图案300进行固化处理，此加热温度可在250℃左右，以完全蒸发掉初始图案300内的溶剂，以免污染后续的离子注入环境，需要说明的是，此溶剂可为光刻材料本身的溶剂，也可为显影液。此外，通过对曝光后的像素界定层的初始图案300进行固化处理可使形成的像素界定层的最终图案301为坚膜，以提高像素界定层的最终图案301在后续蚀刻过程中保护下表面的能力。
下面可结合附图针对不同实施方案的改进效果进行详细说明：
图5示出了三种实施方案制作出的像素界定层的测试结果的对比图，具体地：
第一种实施方案为：在制作像素界定层时，真空干燥处理的底压强为26Pa，并且不打开用于进行第二曝光处理的I线紫外灯，即：未在形成初始图案300之后对初始图案300进行曝光处理。对此实施方案制作出来的产品进行测试后的结果为：像素界定层的左侧坡度角为47.2°，右侧坡度角为49.7°。且对一个产品切割下来的五个样品进行测试，该像素界定层的坡度角的平均值为47.8°。
第二种实施方案为：在制作像素界定层时，真空干燥处理的底压强为26Pa，并且打开用于进行第二曝光处理的I线紫外灯，即：在形成初始图案300之后对初始图案300进行曝光处理。对此实施方案制作出来的产品进行测试后的结果为：像素界定层的左侧坡度角为32.6°，右侧坡度角为32.1°。且对一个产品切割下来的五个样品进行测试，该像素界定层的坡度角的平均值为33.2°。
第三种实施方案为：在制作像素界定层时，真空干燥处理的底压强调整为500Pa，并且打开用于进行第二曝光处理的I线紫外灯，即：在形成初始图案300之后对初始图案300进行曝光处理。对此实施方案制作出来的产品进行测试后的结果为：像素界定层(即最终图案301)的左侧坡度角为29.7°，右侧坡度角为30.6°。且对一个产品切割下来的五个样品进行测试，该像素界定层的坡度角的平均值为30.4°。
需要说明的是，这三种实施方式在制作像素界定层时，只有真空干燥处理的压强和是否初始图案300进行曝光处理这两个制作条件不同，其余制作条件相同。
图6示出了另两种实施方案制作出的像素界定层的测试结果的对比图，具体地：
第四种实施方案为：在制作像素界定层时，光刻材料薄膜30的厚度为3.5μm，真空干燥处理的底压强为26Pa，并且打开用于进行第二曝光处理的I线紫外灯，即：在形成初始图案300之后对初始图 案300进行曝光处理。对此实施方案制作出来的产品进行测试后的结果为：像素界定层坡度角为32.2°。且此方案中，在不同打印厚度下，如图6中所示的8μm、10μm、12μm，产品的Mura现象的严重程度也不同。
第五种实施方案为：在制作像素界定层时，光刻材料薄膜30的厚度为3μm，真空干燥处理的底压强为500Pa，并且打开用于进行第二曝光处理的I线紫外灯，即：在形成初始图案300之后对初始图案300进行曝光处理。对此实施方案制作出来的产品进行测试后的结果为：像素界定层坡度角为23.5°。且此方案中，在不同打印厚度下，如图6中所示的8μm、10μm、12μm，产品的Mura现象的严重程度也不同。
其中，图6中示出的L0、L1、L3表示产品的Mura现象的严重程度，L0和L1表示无Mura或者Mura非常轻微，L3表示Orange Mura很严重。
需要说明的是，这三种实施方式在制作像素界定层时，只有光刻材料薄膜30的厚度和真空干燥处理的压强这两个制作条件不同，其余制作条件相同。
基于上述可知，为了实现量产要求，本申请优选采用第五种实施方案。通过采用第五种实施方案，可使像素界定层(即：最终图案301)的坡度角可以小于25°，从而能够有效改善因墨水流平问题而产生的Mura现象，继而可以配合改善后端产生的RGB暗竖条纹及混色的情况。此外，这样还可适当降低发光层的打印厚度，例如，可由原来的12μm降低至8μm，且不出现Mura现象，从而可在保证产品质量的同时，降低打印成本及打印时间，提高产能。
此外，本申请一实施例还提供了一种显示面板的制作方法，其包括：
步骤S10，在基板上形成像素界定层，此像素界定层采用前述任一实施例所述的像素界定层的制作方法制作而成；
步骤S20，在像素界定层上的开口区形成发光层；
步骤S30，在发光层上形成封装层。
举例而言，封装层可包括有机封装薄膜。而在发光层上形成封装层可包括：采用喷墨打印工艺在发光层上形成有机封装薄膜。
进一步地，本申请一实施例还提供一种显示面板，其采用前述的显示面板的制作方法制作而成。该显示面板可为OLED(Organic Light-Emitting Diode，有机发光二极管)显示面板，尤其是AMOLED显示面板，但不以此为限。
本申请提供的技术方案可以达到以下有益效果：
本申请所提供的像素界定层的制作方法，在对形成在基板上的光刻材料薄膜依次进行前烘处理、第一曝光处理及显影处理，以形成像素界定层的初始图案之后，还需要对像素界定层的初始图案进行第二曝光处理，以使初始图案中的感光剂分解，即：链状大分子分解成小分子，从而可增加固化处理时光刻材料的流动性，以修正像素界定层的初始图案的边缘轮廓，使得形成的像素界定层的最终图案的坡度角减小。由于像素界定层的坡度角减小，因此，可使后续喷墨打印工艺时墨水更易于流平，从而能够改善Mura现象，保证产品质量。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本申请的其它实施方案。本申请旨在涵盖本申请的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本申请的一般性原理并包括本申请未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本申请的真正范围和精神由所附的权利要求指出。

Claims (14)

  1. 一种像素界定层的制作方法，包括：
    在基板上形成光刻材料薄膜；
    对所述光刻材料薄膜依次进行第一曝光处理及显影处理，以形成像素界定层的初始图案；
    对所述初始图案先后进行第二曝光处理、及固化处理，以形成像素界定层的最终图案。
  2. 根据权利要求1所述的制作方法，其中，对所述初始图案进行第二曝光处理，包括：
    采用I线紫外灯对所述初始图案进行第二次曝光处理。
  3. 根据权利要求2所述的制作方法，其中，
    所述I线紫外灯的光照强度为120mW/cm 2～250mW/cm 2。
  4. 根据权利要求1所述的制作方法，其中，对所述初始图案进行第二曝光处理，包括：
    利用至少暴露所述初始图案的侧表面的光掩膜对所述初始图案进行曝光。
  5. 根据权利要求1所述的制作方法，其中，对所述初始图案进行第二曝光处理，包括：
    利用完全暴露所述初始图案的光掩膜或不使用光掩膜对所述初始图案先后进行曝光。
  6. 根据权利要求1所述的制作方法，其中，在对所述光刻材料薄膜进行第一曝光处理之前，所述方法还包括：
    对所述光刻材料薄膜进行前烘处理。
  7. 根据权利要求6所述的制作方法，其中，在对所述光刻材料薄膜进行前烘处理之前，还包括：
    对所述光刻材料薄膜进行真空干燥处理。
  8. 根据权利要求7所述的制作方法，其中，所述真空干燥处理包括多个处理阶段，各所述处理阶段的压强依次减小。
  9. 根据权利要求8所述的制作方法，其中，所述多个处理阶段中最后处理阶段的压强为300Pa～700Pa。
  10. 根据权利要求7所述的制作方法，其中，所述真空干燥处理中总用时为110s～130s。
  11. 根据权利要求1所述的制作方法，其中，所述光刻材料薄膜的厚度为1.8μm～4.5μm。
  12. 一种显示面板的制作方法，包括：
    在基板上形成像素界定层，所述像素界定层采用权利要求1至11中任一项所述的像素界定层的制作方法制作而成；
    在所述像素界定层上的开口区形成发光层；
    在所述发光层上形成封装层。
  13. 根据权利要求12所述的制作方法，其中，
    所述封装层包括有机封装薄膜，
    所述在所述发光层上形成封装层，包括：
    采用喷墨打印工艺在所述发光层上形成有机封装薄膜。
  14. 一种显示面板，采用权利要求12或13所述的显示面板的制作方法制作而成。
PCT/CN2019/126370 2019-01-03 2019-12-18 像素界定层及显示面板的制作方法、显示面板 WO2020140762A1 (zh)

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