WO2018066557A1

WO2018066557A1 - Sensor chip, strain inducing body, and force sensor device

Info

Publication number: WO2018066557A1
Application number: PCT/JP2017/035973
Authority: WO
Inventors: 真也山口
Original assignee: ミツミ電機株式会社; 真也山口
Priority date: 2016-10-07
Filing date: 2017-10-03
Publication date: 2018-04-12

Abstract

This sensor chip comprises: a base plate; first supporting portions disposed at four corners of the base plate; a second supporting portion disposed at the center of the base plate; first detection beams linking the first supporting portions that are adjacent to one another; second detection beams which are provided between each of the first detection beams and the second supporting portion, parallel to each of the first detection beams; third detection beams which link the first detection beams and the second detection beams in the groups of first detection beams and second detection beams that are provided parallel to one another; and a plurality of strain detecting elements disposed at force application points to which a force is applied, disposed at the points of intersection of the first detection beams and the third detection beams, and at prescribed positions on the first detection beams, the second detection beams and the third detection beams. Displacement in a Z-axis direction, which is the thickness direction of the base plate, is detected on the basis of deformation of at least the third detection beams, and displacement in an X-axis direction and a Y-axis direction orthogonal to the Z-axis direction is detected on the basis of deformation of at least one of either the first detection beams or the second detection beams.

Description

Sensor chip, strain generating body, force sensor device

The present invention relates to a sensor chip, a strain generating body, and a force sensor device.

2. Description of the Related Art Conventionally, a force sensor device that detects a multiaxial force by attaching a plurality of strain gauges to a metal strain generating body and converting strain when an external force is applied into an electrical signal is known. . However, this force sensor device has a problem in accuracy and productivity because it is necessary to affix the strain gauges one by one by hand, and it is difficult to downsize the structure.

On the other hand, a force sensor device has been proposed in which the strain gauge is replaced with a MEMS sensor chip for strain detection, thereby solving the problem of bonding accuracy and realizing miniaturization (for example, see Patent Document 1). .

Patent No. 4011345

However, in the force sensor device described above, it is necessary to calculate (signal processing) outputs from a plurality of strain elements of the sensor chip to obtain a 6-axis output, and a multi-axis output cannot be obtained by a simple method. It was.

The present invention has been made in view of the above points, and an object of the present invention is to provide a sensor chip that can detect and output multi-axis displacement by a simple method.

This sensor chip (10) maximizes the displacement in a predetermined axial direction based on the change in the output of a plurality of strain detection elements arranged on a predetermined beam according to the direction of the force or displacement applied to the force point. A sensor chip for detecting 6 axes, a substrate, first support portions (11a to 11d) disposed at four corners of the substrate, and a second support portion (11e) disposed at the center of the substrate. A first detection beam (13a, 13d, 13g, 13j) that connects the adjacent first support portions (11a to 11d), and each of the first detection beams (13a, 13d, 13g, 13j) and a second detection beam (13a, 13d, 13g, 13j) provided in parallel with each of the first detection beams (13a, 13d, 13g, 13j) between the second support portion (11e). 13b, 13e, 13h, 13k) and the first In the set of the detection beams (13a, 13d, 13g, 13j) and the second detection beams (13b, 13e, 13h, 13k), the first detection beams (13a, 13d, 13g, 13j) A third detection beam (13c, 13f, 13i, 13l) connecting the second detection beam (13b, 13e, 13h, 13k) and each of the first detection beams (13a, 13d, 13g, 13j) and the third detection beams (13c, 13f, 13i, 13l) arranged at the intersections of the force points (14a to 14d) to which a force is applied, and the first The detection beams (13a, 13d, 13g, 13j), the second detection beams (13b, 13e, 13h, 13k), and the third detection beams (13f, 13l) are disposed at predetermined positions. Multiple strain sensing elements (MxR1 to Mx R4, MyR1 to MyR4, MzR1 to MzR4, FxR1 to FxR4, FyR1 to FyR4, FzR1 to FzR4), and the displacement in the Z-axis direction that is the thickness direction of the substrate is at least for the third detection Detection based on deformation of the beam (13f, 13l), displacement in the X-axis direction and the Y-axis direction orthogonal to the Z-axis direction is the first detection beam (13a, 13d, 13g, 13j) or It is necessary to detect based on deformation of at least one of the second detection beams (13b, 13e, 13h, 13k).

Note that the reference numerals in the parentheses are given for easy understanding, are merely examples, and are not limited to the illustrated modes.

According to the disclosed technology, it is possible to provide a sensor chip capable of detecting and outputting multi-axis displacement by a simple method.

1 is a perspective view illustrating a force sensor device according to a first embodiment. 1 is a perspective view illustrating a sensor chip and a strain body of a force sensor device according to a first embodiment. It is the figure (the 1) which looked at the sensor chip 10 from the Z-axis direction upper side. It is the figure (the 2) which looked at the sensor chip 10 from the Z-axis direction upper side. It is the figure (the 1) which looked at the sensor chip 10 from the Z-axis direction lower side. It is the figure (the 2) which looked at the sensor chip 10 from the Z-axis direction lower side. It is a figure explaining the code | symbol which shows the force and moment concerning each axis | shaft. 2 is a diagram illustrating an arrangement of piezoresistive elements of a sensor chip 10. FIG. 4 is a diagram illustrating electrode arrangement and wiring in the sensor chip 10. FIG. 3 is an enlarged plan view illustrating a temperature sensor of the sensor chip 10. FIG. 2 is a perspective view illustrating a strain generating body 20. FIG. FIG. 2 is a diagram (part 1) illustrating a strain generating body 20; FIG. 2 is a diagram (part 2) illustrating a strain generating body 20; FIG. 2 is a diagram (part 1) illustrating a manufacturing process of the force sensor device 1; FIG. 3 is a second diagram illustrating a manufacturing process of the force sensor device 1; FIG. 6 is a third diagram illustrating a manufacturing process of the force sensor device 1; FIG. 6 is a diagram (No. 4) illustrating a manufacturing process of the force sensor device 1; FIG. 10 is a diagram (No. 5) illustrating a manufacturing process of the force sensor device 1; FIG. 6 is a diagram (No. 6) illustrating a manufacturing process of the force sensor device 1; It is the simulation result (the 1) about a deformation | transformation (distortion) at the time of applying a force and a moment to a strain body. It is the simulation result (the 2) about a deformation | transformation (distortion) at the time of applying a force and a moment to a strain body. It is the simulation result (the 1) about the stress which generate | occur | produces in the sensor chip 10 when the force and moment of FIG.14 and FIG.15 are applied. It is a simulation result (the 2) about the stress which generate | occur | produces in the sensor chip 10 when the force and moment of FIG.14 and FIG.15 are applied. It is the simulation result (the 3) about the stress which generate | occur | produces in the sensor chip 10 when the force and moment of FIG.14 and FIG.15 are applied. It is a simulation result (the 4) about the stress which generate | occur | produces in the sensor chip 10 when the force and moment of FIG.14 and FIG.15 are applied. 16 is a simulation result (No. 5) of a stress generated in the sensor chip 10 when the force and the moment shown in FIGS. 14 and 15 are applied. FIG. 16 is a simulation result (No. 6) of a stress generated in the sensor chip 10 when the force and moment of FIGS. 14 and 15 are applied. FIG. It is a perspective view which illustrates the force sensor device concerning the modification 1 of a 1st embodiment. It is a figure (the 1) which illustrates the force sensor device concerning the modification 1 of a 1st embodiment. It is FIG. (2) which illustrates the force sensor apparatus which concerns on the modification 1 of 1st Embodiment. It is the figure (the 1) which looked at the sensor chip 50 from the Z-axis direction upper side. It is the figure (the 2) which looked at the sensor chip 50 from the Z-axis direction upper side. FIG. 3 is a diagram illustrating an arrangement of piezoresistive elements of a sensor chip 50. It is a perspective view (the 1) which illustrates the force sensor device concerning modification 3 of a 1st embodiment. It is a perspective view (the 2) which illustrates the force sensor device concerning modification 3 of a 1st embodiment. FIG. 14 is a perspective view (part 3) illustrating a force sensor device according to a third modification of the first embodiment; It is a perspective view (the 1) which illustrates a force sensor device concerning modification 4 of a 1st embodiment. It is a perspective view (the 2) which illustrates the force sensor device concerning the modification 4 of a 1st embodiment. It is the figure (the 1) which looked at the sensor chip 110 from the Z-axis direction upper side. It is the figure (the 2) which looked at the sensor chip 110 from the Z-axis direction upper side. It is the figure (the 1) which looked at the sensor chip 110 from the Z-axis direction lower side. It is the figure (the 2) which looked at the sensor chip 110 from the Z-axis direction lower side. FIG. 4 is a diagram illustrating an arrangement of piezoresistive elements of a sensor chip 110. It is FIG. (1) explaining the improvement of the load resistance in the sensor chip. FIG. 6 is a diagram (part 2) for explaining the improvement of load resistance in the sensor chip 110; FIG. 6 is a diagram (No. 3) for explaining the improvement of load resistance in the sensor chip 110; It is FIG. (4) explaining the improvement of the load resistance in the sensor chip. FIG. 10 is a diagram (No. 5) for explaining the improvement in load resistance of the sensor chip 110; It is FIG. (6) explaining the improvement of the load resistance in the sensor chip. FIG. 6 is a diagram (part 1) for explaining improvement of sensitivity in the sensor chip 110; FIG. 5 is a diagram (part 2) for explaining an improvement in sensitivity in the sensor chip 110; FIG. 6 is a diagram (part 3) for explaining an improvement in sensitivity in the sensor chip 110; FIG. 6 is a diagram (part 1) for explaining improvement of other-axis characteristics in the sensor chip 110; FIG. 6 is a diagram (part 2) for explaining the improvement of the other-axis characteristic in the sensor chip 110. FIG. 10 is a third diagram illustrating the improvement of the other-axis characteristic in the sensor chip 110. It is the simulation result (the 1) about the stress which generate | occur | produces in the sensor chip 110 when a force and a moment are applied. It is the simulation result (the 2) about the stress which generate | occur | produces in the sensor chip 110 when a force and a moment are applied. It is the simulation result (the 3) about the stress which generate | occur | produces in the sensor chip 110 when a force and a moment are applied. It is a simulation result (the 4) about the stress which generate | occur | produces in the sensor chip 110 when a force and a moment are applied.

Hereinafter, embodiments for carrying out the invention will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant description may be omitted.

<First Embodiment>
(Schematic configuration of the force sensor device 1)
FIG. 1 is a perspective view illustrating the force sensor device according to the first embodiment. FIG. 2 is a perspective view illustrating a sensor chip and a strain body of the force sensor device according to the first embodiment. 1 and 2, the force sensor device 1 includes a sensor chip 10, a strain body 20, and an input / output substrate 30. The force sensor device 1 is a multi-axis force sensor device mounted on, for example, an arm or a finger of a robot used in a machine tool or the like.

The sensor chip 10 is bonded to the upper surface side of the strain body 20 so as not to protrude from the strain body 20. Further, one end side of an input / output substrate 30 for inputting / outputting signals to / from the sensor chip 10 is bonded to the upper surface and the side surface of the strain generating body 20. The sensor chip 10 and each electrode 31 of the input / output substrate 30 are electrically connected by a bonding wire or the like (not shown). On the other end side of the input / output substrate 30, terminals (not shown) capable of electrical input / output with a control device connected to the force sensor device 1 are arranged.

In the present embodiment, for the sake of convenience, in the force sensor device 1, the side on which the input / output substrate 30 of the strain generating body 20 is provided is the upper side or one side, and the opposite side is the lower side or the other side. . Also, the surface of the strain generating body 20 on each side where the input / output substrate 30 is provided is defined as one surface or upper surface, and the opposite surface is defined as the other surface or lower surface. However, the force sensor device 1 can be used upside down, or can be arranged at an arbitrary angle. Further, the planar view means that the object is viewed from the normal direction (Z-axis direction) of the upper surface of the sensor chip 10, and the planar shape is the normal direction of the upper surface of the sensor chip 10 (Z-axis direction). ) Refers to the shape viewed from.

(Sensor chip 10)
3A is a perspective view of the sensor chip 10 viewed from the upper side in the Z-axis direction, and FIG. 3B is a plan view of the sensor chip 10 viewed from the upper side in the Z-axis direction. 4A is a perspective view of the sensor chip 10 viewed from the lower side in the Z-axis direction, and FIG. 4B is a bottom view of the sensor chip 10 viewed from the lower side in the Z-axis direction. In FIG. 4B, the surface of the same height is shown with the same satin pattern for convenience. The direction parallel to one side of the upper surface of the sensor chip 10 is the X-axis direction, the perpendicular direction is the Y-axis direction, and the thickness direction of the sensor chip 10 (the normal direction of the upper surface of the sensor chip 10) is the Z-axis direction. . The X axis direction, the Y axis direction, and the Z axis direction are orthogonal to each other.

The sensor chip 10 shown in FIGS. 3A, 3B, 4A, and 4B is a MEMS (Micro Electro Mechanical Systems) sensor chip that can detect up to six axes with one chip, and is a semiconductor such as an SOI (Silicon On Insulator) substrate. It is formed from a substrate. The planar shape of the sensor chip 10 can be a square of about 3000 μm square, for example.

The sensor chip 10 includes five columnar support portions 11a to 11e. The planar shape of the support portions 11a to 11e can be a square of about 500 μm square, for example. The support parts 11 a to 11 d as the first support parts are arranged at the four corners of the sensor chip 10. The support part 11e, which is the second support part, is arranged at the center of the support parts 11a to 11d.

The support portions 11a to 11e can be formed of, for example, an active layer, a BOX layer, and a support layer of an SOI substrate, and the thickness of each can be set to about 500 μm, for example.

Between the support portion 11a and the support portion 11b, there is provided a reinforcing beam 12a that is fixed at both ends to the support portion 11a and the support portion 11b (connects adjacent support portions) and reinforces the structure. It has been. Between the support part 11b and the support part 11c, both ends of the support part 11b and the support part 11c are fixed (to connect adjacent support parts), and a reinforcing beam 12b is provided to reinforce the structure. It has been.

Between the support portion 11c and the support portion 11d, there are provided reinforcing beams 12c that are fixed at both ends to the support portion 11c and the support portion 11d (to connect adjacent support portions) and reinforce the structure. It has been. Between the support part 11d and the support part 11a, both ends of the support part 11d and the support part 11a are fixed (to connect adjacent support parts), and a reinforcing beam 12d is provided to reinforce the structure. It has been.

In other words, the four reinforcing

beams

12a, 12b, 12c, and 12d, which are the first reinforcing beams, are formed in a frame shape, and the corners that form the intersections of the reinforcing beams are the

support portions

11b, 11c, 11d. 11a.

The inner corner of the support portion 11a and the opposite corner of the support portion 11e are connected by a reinforcing beam 12e for reinforcing the structure. The corner portion inside the support portion 11b and the corner portion of the support portion 11e opposite to the corner portion are connected by a reinforcing beam 12f for reinforcing the structure.

The inner corner of the support portion 11c and the opposite corner of the support portion 11e are connected by a reinforcing beam 12g for reinforcing the structure. The corner part inside the support part 11d and the corner part of the support part 11e facing it are connected by a reinforcing beam 12h for reinforcing the structure. The reinforcing beams 12e to 12h, which are the second reinforcing beams, are arranged obliquely with respect to the X-axis direction (Y-axis direction). That is, the reinforcing beams 12e to 12h are disposed non-parallel to the reinforcing

beams

12a, 12b, 12c, and 12d.

The reinforcing beams 12a to 12h can be formed from, for example, an active layer, a BOX layer, and a support layer of an SOI substrate. The thickness (width in the short direction) of the reinforcing beams 12a to 12h can be set to about 140 μm, for example. The upper surfaces of the reinforcing beams 12a to 12h are substantially flush with the upper surfaces of the support portions 11a to 11e.

On the other hand, the lower surfaces of the reinforcing beams 12a to 12h are recessed to the upper surface side by about several tens of μm from the lower surfaces of the support portions 11a to 11e and the lower surfaces of the force points 14a to 14d. This is to prevent the lower surfaces of the reinforcing beams 12a to 12h from coming into contact with the opposing surface of the strain body 20 when the sensor chip 10 is bonded to the strain body 20.

As described above, the rigidity of the entire sensor chip 10 can be increased by disposing the reinforcing beam having a high rigidity formed thicker than the detection beam separately from the detection beam for detecting the strain. This makes it difficult to deform other than the detection beam with respect to the input, so that good sensor characteristics can be obtained.

Inside the reinforcement beam 12a between the support part 11a and the support part 11b, both ends are fixed to the support part 11a and the support part 11b in parallel with a predetermined interval (adjacent to the reinforcement beam 12a). Detection beams 13a for detecting strain are provided.

Between the detection beam 13a and the support portion 11e, a detection beam 13b is provided in parallel with the detection beam 13a at a predetermined interval from the detection beam 13a and the support portion 11e. The detection beam 13b connects the end portion on the support portion 11e side of the reinforcement beam 12e and the end portion on the support portion 11e side of the reinforcement beam 12f.

The substantially central portion in the longitudinal direction of the detection beam 13a and the substantially central portion in the longitudinal direction of the detection beam 13b facing the detection beam 13a are arranged so as to be orthogonal to the detection beam 13a and the detection beam 13b. It is connected by a detection beam 13c for detection.

Inside the reinforcing beam 12b between the support portion 11b and the support portion 11c, both ends are fixed to the support portion 11b and the support portion 11c (adjacent to each other) in parallel with the reinforcing beam 12b at a predetermined interval. 13 d of detection beams for detecting distortion are provided.

Between the detection beam 13d and the support portion 11e, a detection beam 13e is provided in parallel with the detection beam 13d at a predetermined interval from the detection beam 13d and the support portion 11e. The detection beam 13e connects the end portion on the support portion 11e side of the reinforcing beam 12f and the end portion on the support portion 11e side of the reinforcement beam 12g.

A substantially central portion in the longitudinal direction of the detection beam 13d and a substantially central portion in the longitudinal direction of the detection beam 13e facing the detection beam 13d are arranged so as to be orthogonal to the detection beam 13d and the detection beam 13e. It is connected by a detection beam 13f for detection.

Inside the reinforcing beam 12c between the support part 11c and the support part 11d, both ends are fixed to the support part 11c and the support part 11d in parallel with a predetermined interval (adjacent to the reinforcing beam 12c). A supporting beam 13g for detecting strain is provided.

Between the detection beam 13g and the support portion 11e, a detection beam 13h is provided in parallel with the detection beam 13g at a predetermined interval from the detection beam 13g and the support portion 11e. The detection beam 13h connects the end portion on the support portion 11e side of the reinforcement beam 12g and the end portion on the support portion 11e side of the reinforcement beam 12h.

A substantially central portion in the longitudinal direction of the detection beam 13g and a substantially central portion in the longitudinal direction of the detection beam 13h opposed thereto are arranged so as to be orthogonal to the detection beam 13g and the detection beam 13h. It is connected by a detection beam 13i for detection.

Inside the reinforcing beam 12d between the supporting portion 11d and the supporting portion 11a, both ends are fixed to the supporting portion 11d and the supporting portion 11a in parallel with a predetermined distance from the reinforcing beam 12d (adjacent to each other). Detection beams 13j for detecting strain are provided.

Between the detection beam 13j and the support portion 11e, a detection beam 13k is provided in parallel with the detection beam 13j at a predetermined interval from the detection beam 13j and the support portion 11e. The detection beam 13k connects the end portion on the support portion 11e side of the reinforcement beam 12h and the end portion on the support portion 11e side of the reinforcement beam 12e.

The substantially central portion in the longitudinal direction of the detection beam 13j and the substantially central portion in the longitudinal direction of the detection beam 13k facing the detection beam 13j are arranged so as to be orthogonal to the detection beam 13j and the detection beam 13k. It is connected by a detection beam 13l for detection.

The detection beams 13a to 13l are provided on the upper end side in the thickness direction of the support portions 11a to 11e, and can be formed from, for example, an active layer of an SOI substrate. The thickness (width in the short direction) of the detection beams 13a to 13l can be set to about 75 μm, for example. The upper surfaces of the detection beams 13a to 13l are substantially flush with the upper surfaces of the support portions 11a to 11e. The thickness of each of the detection beams 13a to 13l can be set to about 50 μm, for example.

A force point 14a is provided on the lower surface side (intersection of the detection beam 13a and the detection beam 13c) of the central portion in the longitudinal direction of the detection beam 13a. The detection beams 13a, 13b, and 13c and the force point 14a constitute a set of detection blocks.

A force point 14b is provided on the lower surface side (intersection of the detection beam 13d and the detection beam 13f) of the central portion in the longitudinal direction of the detection beam 13d. The detection beams 13d, 13e, and 13f and the force point 14b form a set of detection blocks.

A force point 14c is provided on the lower surface side (intersection of the detection beam 13g and the detection beam 13i) of the central portion in the longitudinal direction of the detection beam 13g. The detection beams 13g, 13h, and 13i and the force point 14c form a set of detection blocks.

A force point 14d is provided on the lower surface side (intersection of the detection beam 13j and the detection beam 13l) of the central portion in the longitudinal direction of the detection beam 13j. The detection beams 13j, 13k, and 13l and the force point 14d form a set of detection blocks.

The force points 14a to 14d are portions to which an external force is applied, and can be formed from, for example, a BOX layer and a support layer of an SOI substrate. The lower surfaces of the force points 14a to 14d are substantially flush with the lower surfaces of the support portions 11a to 11e.

In this way, by taking in force or displacement from the four force points 14a to 14d, different beam deformations can be obtained for each type of force, so that a sensor with good separability of 6 axes can be realized.

In addition, in the sensor chip 10, from the viewpoint of suppressing the stress concentration, it is preferable that the portion that forms the inner angle has an R shape.

FIG. 5 is a diagram for explaining symbols indicating the force and moment applied to each axis. As shown in FIG. 5, the force in the X-axis direction is Fx, the force in the Y-axis direction is Fy, and the force in the Z-axis direction is Fz. In addition, a moment for rotating about the X axis as Mx, a moment for rotating about the Y axis as My, and a moment for rotating about the Z axis as Mz are set as Mz.

FIG. 6 is a diagram illustrating the arrangement of the piezoresistive elements of the sensor chip 10. Piezoresistive elements are arranged at predetermined positions of the respective detection blocks corresponding to the four force points 14a to 14d.

Specifically, referring to FIGS. 3A, 3B, and 6, in the detection block corresponding to the force point 14a, the piezoresistive elements MxR3 and MxR4 are on a line that bisects the detection beam 13a in the longitudinal direction. And it arrange | positions in the symmetrical position with respect to the line | wire which bisects the beam 13c for a detection in the longitudinal direction. Further, the piezoresistive elements FyR3 and FyR4 are on the side of the detection beam 13a with respect to the line that bisects the detection beam 13b in the longitudinal direction, and the line that bisects the detection beam 13c in the longitudinal direction. They are arranged at symmetrical positions.

In the detection block corresponding to the force point 14b, the piezoresistive elements MyR3 and MyR4 are on a line that bisects the detection beam 13d in the longitudinal direction and bisect the detection beam 13f in the longitudinal direction. It is arranged at a symmetrical position with respect to the line. Further, the piezoresistive elements FxR3 and FxR4 are on the detection beam 13d side with respect to the line that bisects the detection beam 13e in the longitudinal direction, and are lines that bisect the detection beam 13f in the longitudinal direction. They are arranged at symmetrical positions.

Further, MzR3 and MzR4 are on the detection beam 13e side with respect to the line that bisects the detection beam 13f in the short direction, and with respect to the line that bisects the detection beam 13f in the longitudinal direction. It is arranged in a symmetrical position. Further, FzR3 and FzR4 are arranged on a line that bisects the detection beam 13f in the longitudinal direction and symmetrically with respect to a line that bisects the detection beam 13f in the short direction. Yes.

In the detection block corresponding to the force point 14c, the piezoresistive elements MxR1 and MxR2 are on a line that bisects the detection beam 13g in the longitudinal direction and bisects the detection beam 13i in the longitudinal direction. It is arranged at a symmetrical position with respect to the line. Further, the piezoresistive elements FyR1 and FyR2 are on the side of the detection beam 13g with respect to the line that bisects the detection beam 13h in the longitudinal direction, and the line that bisects the detection beam 13i in the longitudinal direction. They are arranged at symmetrical positions.

In the detection block corresponding to the force point 14d, the piezoresistive elements MyR1 and MyR2 are on a line that bisects the detection beam 13j in the longitudinal direction and bisects the detection beam 13l in the longitudinal direction. It is arranged at a symmetrical position with respect to the line. The piezoresistive elements FxR1 and FxR2 are on the side of the detection beam 13j with respect to the line that bisects the detection beam 13k in the longitudinal direction, and are lines that bisect the detection beam 13l in the longitudinal direction. They are arranged at symmetrical positions.

Further, MzR1 and MzR2 are located on the detection beam 13k side with respect to the line that bisects the detection beam 13l in the short direction, and with respect to the line that bisects the detection beam 13l in the longitudinal direction. It is arranged in a symmetrical position. Further, FzR1 and FzR2 are arranged on a line that bisects the detection beam 13l in the longitudinal direction and symmetrically with respect to a line that bisects the detection beam 13l in the short direction. Yes.

Here, the piezoresistive elements FxR1 to FxR4 detect the force Fx, the piezoresistive elements FyR1 to FyR4 detect the force Fy, and the piezoresistive elements FzR1 to FzR4 detect the force Fz. The piezoresistive elements MxR1 to MxR4 detect the moment Mx, the piezoresistive elements MyR1 to MyR4 detect the moment My, and the piezoresistive elements MzR1 to MzR4 detect the moment Mz.

Thus, in the sensor chip 10, a plurality of piezoresistive elements are separately arranged in each detection block. As a result, based on the change in the output of the plurality of piezoresistive elements arranged on the predetermined beam in accordance with the direction of the force or displacement (axial direction) applied (transmitted) to the force points 14a to 14d, the predetermined axis It is possible to detect the displacement in the direction up to 6 axes.

Specifically, in the sensor chip 10, the displacement (Mx, My, Fz) in the Z-axis direction can be detected based on a predetermined deformation of the detection beam. That is, the moments (Mx, My) in the X-axis direction and the Y-axis direction can be detected based on the deformation of the

detection beams

13a, 13d, 13g, and 13j that are the first detection beams. Further, the force (Fz) in the Z-axis direction can be detected based on the deformation of the detection beams 13f and 13l which are the third detection beams.

Further, in the sensor chip 10, the displacements (Fx, Fy, Mz) in the X-axis direction and the Y-axis direction can be detected based on a predetermined deformation of the detection beam. That is, the forces (Fx, Fy) in the X-axis direction and the Y-axis direction can be detected based on the deformation of the detection beams 13b, 13e, 13h, and 13k, which are the second detection beams. The moment (Mz) in the Z-axis direction can be detected based on the deformation of the detection beams 13f and 13l that are the third detection beams.

調整 By varying the thickness and width of each detection beam, it is possible to make adjustments such as uniform detection sensitivity and improved detection sensitivity.

However, the number of piezoresistive elements can be reduced to provide a sensor chip that detects displacement in a predetermined axial direction of 5 axes or less.

FIG. 7 is a diagram illustrating the electrode arrangement and wiring in the sensor chip 10, and is a plan view of the sensor chip 10 as viewed from the upper side in the Z-axis direction. As shown in FIG. 7, the sensor chip 10 has a plurality of electrodes 15 for taking out an electrical signal. Each electrode 15 is disposed on the upper surface of the support portions 11a to 11d of the sensor chip 10 with the least distortion when a force is applied to the force points 14a to 14d. The wiring 16 from each piezoresistive element to the electrode 15 can be appropriately routed on each reinforcing beam and each detecting beam.

In this way, each reinforcing beam can also be used as a detour when pulling out the wiring as needed, so by arranging the reinforcing beam separately from the detection beam, the degree of freedom in wiring design is improved. be able to. Thereby, each piezoresistive element can be arranged at a more ideal position.

FIG. 8 is an enlarged plan view illustrating the temperature sensor of the sensor chip 10. As shown in FIGS. 7 and 8, the sensor chip 10 includes a temperature sensor 17 for performing temperature correction on a piezoresistive element used for strain detection. The temperature sensor 17 has a configuration in which four piezoresistive elements TR1, TR2, TR3, and TR4 are bridge-connected.

Among the piezoresistive elements TR1, TR2, TR3, and TR4, two opposing ones have the same characteristics as the piezoresistive element MxR1 used for strain detection. The other two opposing piezoresistive elements TR1, TR2, TR3, and TR4 have different characteristics from the piezoresistive element MxR1 and the like by changing the impurity concentration depending on the impurity semiconductor. Thereby, since the balance of the bridge is lost due to temperature change, temperature detection is possible.

Note that all of the piezoresistive elements (such as MxR1) used for strain detection are arranged horizontally or vertically with respect to the crystal orientation of the semiconductor substrate (such as silicon) constituting the sensor chip 10. As a result, a larger resistance change can be obtained with respect to the same strain, and the measurement accuracy of the applied force and moment can be improved.

On the other hand, the piezoresistive elements TR1, TR2, TR3, and TR4 that constitute the temperature sensor 17 are arranged so as to be inclined by 45 degrees with respect to the crystal orientation of the semiconductor substrate (such as silicon) that constitutes the sensor chip 10. . Thereby, since the resistance change with respect to stress can be reduced, only a temperature change can be detected accurately.

Further, the temperature sensor 17 is disposed on the upper surface of the support portion 11a of the sensor chip 10 with the least distortion when a force is applied to the force points 14a to 14d. Thereby, the resistance change with respect to stress can be reduced further.

The piezoresistive element is a typical example of the strain detecting element according to the present invention.

(Distortion body 20)
FIG. 9 is a perspective view illustrating the strain body 20. 10A is a plan view illustrating the strain body 20, and FIG. 10B is a cross-sectional perspective view taken along line AA of FIG. 10A. In FIG. 10A, the surface of the same height is shown with the same satin pattern for convenience.

As shown in FIGS. 9, 10A, and 10B, in the strain body 20, four pillars 22a to 22d, which are the first pillars, are arranged at the four corners on the base 21, and adjacent pillars are connected to each other. Four beams 23a to 23d, which are first beams to be connected, are provided in a frame shape. A pillar 22e, which is a second pillar, is disposed at the center on the base 21. The pillar 22e is a pillar for fixing the sensor chip 10, and is thicker and shorter than the pillars 22a to 22d. The sensor chip 10 is fixed on the pillar 22e so as not to protrude from the upper surfaces of the pillars 22a to 22d.

The schematic shape of the strain body 20 can be, for example, a rectangular parallelepiped having a length of about 5000 μm, a width of about 5000 μm, and a height of about 7000 μm. The cross-sectional shape of the pillars 22a to 22d can be a square of about 1000 μm square, for example. The cross-sectional shape of the pillar 22e can be, for example, a square of about 2000 μm square.

A protrusion that protrudes upward from the center in the longitudinal direction of the beams 23a to 23d is provided at the center of the upper surface of each of the beams 23a to 23d. On the protrusion, for example, a cylindrical input portion 24a To 24d are provided. The input portions 24a to 24d are portions to which a force is applied from the outside. When a force is applied to the input portions 24a to 24d, the beams 23a to 23d and the columns 22a to 22d are deformed accordingly.

The column 22e is separated from the beams 23a to 23d that are deformed by the applied force and the columns 22a to 22d that are deformed by the applied force. Therefore, even if a force is applied to the input units 24a to 24d. Does not move (does not deform due to applied force).

Thus, by providing the four input portions 24a to 24d, the load resistance of the beams 23a to 23d can be improved as compared with, for example, the structure of one input portion.

Four pillars 25a to 25d, which are third pillars, are arranged at the four corners of the upper surface of the pillar 22e, and a pillar 25e, which is the fourth pillar, is arranged at the center of the upper surface of the pillar 22e. The columns 25a to 25e are formed at the same height.

That is, the upper surfaces of the pillars 25a to 25e are located on the same plane. The upper surface of each of the columns 25a to 25e serves as a bonding portion bonded to the lower surface of the sensor chip 10. Since the columns 25a to 25e are separated from the beams 23a to 23d deformed by the applied force and the columns 22a to 22d deformed by the applied force, the columns 25a to 25e are movable even if a force is applied to the input units 24a to 24d. (It will not be deformed by the applied force).

Beams 26a to 26d projecting inward in the horizontal direction from the inner side surfaces of the beams 23a to 23d are provided at the longitudinal center portions of the inner side surfaces of the beams 23a to 23d. The beams 26a to 26d are second beams that transmit the deformation of the beams 23a to 23d and the columns 22a to 22d to the sensor chip 10. Further, projections 27a to 27d projecting upward from the distal end sides of the upper surfaces of the beams 26a to 26d are provided on the distal ends of the upper surfaces of the beams 26a to 26d.

The protrusions 27a to 27d are formed at the same height. That is, the upper surfaces of the protrusions 27a to 27d are located on the same plane. The upper surfaces of the projecting portions 27a to 27d serve as joint portions that are bonded to the lower surface of the sensor chip 10. Since the beams 26a to 26d and the projecting portions 27a to 27d are connected to the beams 23a to 23d serving as movable portions, when a force is applied to the input portions 24a to 24d, the beams are deformed accordingly.

Note that, when no force is applied to the input portions 24a to 24d, the upper surfaces of the columns 25a to 25e and the upper surfaces of the protrusions 27a to 27d are located on the same plane.

In the strain body 20, the base 21, columns 22a to 22e, beams 23a to 23d, input portions 24a to 24d, columns 25a to 25e, beams 26a to 26d, and projections 27a to 27d are secured with rigidity. Moreover, it is preferable that they are integrally formed from the viewpoint of manufacturing with high accuracy. As a material of the strain body 20, for example, a hard metal material such as SUS (stainless steel) can be used. Among them, it is particularly preferable to use SUS630 that is particularly hard and has high mechanical strength.

Thus, like the sensor chip 10, the strain-generating body 20 also has a structure including a column and a beam, so that the six-axis separability is exhibited because the six-axis changes due to the applied force. Good deformation can be transmitted to the sensor chip 10.

That is, the force applied to the input portions 24a to 24d of the strain body 20 is transmitted to the sensor chip 10 via the columns 22a to 22d, the beams 23a to 23d, and the beams 26a to 26d, and the displacement is caused by the sensor chip 10. Detect. In the sensor chip 10, the output of each axis can be obtained from a bridge circuit formed one for each axis.

In addition, in the strain body 20, it is preferable that the part which forms an internal angle is made into R shape from a viewpoint of suppressing stress concentration.

(Manufacturing process of force sensor device 1)
11A to 13B are diagrams illustrating the manufacturing process of the force sensor device 1. First, as shown in FIG. 11A, the strain body 20 is produced. The strain body 20 can be integrally formed, for example, by molding, cutting, wire discharge, or the like. As a material of the strain body 20, for example, a hard metal material such as SUS (stainless steel) can be used. Among them, it is particularly preferable to use SUS630 that is particularly hard and has high mechanical strength. When the strain generating body 20 is produced by molding, for example, the metal particles and the resin serving as a binder are placed in a mold and then molded, and then the resin is evaporated by sintering, thereby generating the strain generated from the metal. The body 20 can be produced.

Next, in the step shown in FIG. 11B, an adhesive 41 is applied to the upper surfaces of the pillars 25a to 25e and the upper surfaces of the protrusions 27a to 27d. As the adhesive 41, for example, an epoxy adhesive or the like can be used. From the viewpoint of proof strength against externally applied force, the adhesive 41 preferably has a Young's modulus of 1 GPa or more and a thickness of 20 μm or less.

Next, in the step shown in FIG. 12A, the sensor chip 10 is manufactured. The sensor chip 10 can be manufactured by, for example, a well-known method of preparing an SOI substrate and etching the prepared substrate (for example, reactive ion etching). The electrodes and wirings can be produced, for example, by forming a metal film such as copper on the surface of the substrate by sputtering or the like and then patterning the metal film by photolithography.

Next, in the step shown in FIG. 12B, the sensor chip 10 is distorted so that the lower surface of the sensor chip 10 is in contact with the adhesive 41 applied to the upper surfaces of the pillars 25a to 25e and the upper surfaces of the protrusions 27a to 27d. 20 while being pressurized. Then, the adhesive 41 is heated to a predetermined temperature and cured. Thereby, the sensor chip 10 is fixed in the strain body 20. Specifically, the support parts 11a to 11d of the sensor chip 10 are fixed on the pillars 25a to 25e, the support part 11e is fixed on the pillar 25e, and the force points 14a to 14d are fixed on the protrusions 27a to 27d, respectively. Is done.

Next, in the step shown in FIG. 13A, an adhesive 42 is applied to the upper surfaces of the columns 22a to 22d. As the adhesive 42, for example, an epoxy adhesive or the like can be used. Note that the adhesive 42 is for fixing the input / output substrate 30 on the strain body 20, and since a force is not applied from the outside, a general-purpose adhesive can be used.

Next, in the step shown in FIG. 13B, the input / output substrate 30 is prepared, and the input / output substrate 30 is strained so that the lower surface of the input / output substrate 30 is in contact with the adhesive 42 applied to the upper surfaces of the columns 22a to 22d. Place on the body 20. Then, the adhesive 42 is heated to a predetermined temperature and cured while pressing the input / output substrate 30 toward the strain body 20 side. As a result, the input / output substrate 30 is fixed to the strain body 20.

The input / output board 30 is fixed to the strain body 20 so that the sensor chip 10 and the input parts 24a to 24d are exposed. The electrodes 31 of the input / output substrate 30 are preferably disposed on the pillars 22a to 22d of the strain generating body 20 with the least distortion when a force is applied to the input portions 24a to 24d.

Thereafter, the portion of the input / output board 30 that protrudes in the horizontal direction from the strain body 20 (except the input terminal side) is bent to the side surface side of the strain body 20. Then, corresponding portions of the input / output substrate 30 and the sensor chip 10 are electrically connected by bonding wires or the like (not shown). Thereby, the force sensor device 1 shown in FIG. 1 is completed.

As described above, the force sensor device 1 can be manufactured with only the three components of the sensor chip 10, the strain body 20, and the input / output substrate 30. Therefore, the assembly can be easily performed and the number of alignment positions can be minimized. , Deterioration of accuracy due to mounting can be suppressed.

Further, in the strain body 20, since the connection points to the sensor chip 10 (the top surfaces of the columns 25 a to 25 e and the top surfaces of the protrusions 27 a to 27 d) are all on the same plane, the position of the sensor chip 10 with respect to the strain body 20. The alignment is only required once, and it is easy to mount the sensor chip 10 on the strain body 20.

(Simulation of stress)
14 and 15 show simulation results for deformation (strain) when a force and a moment are applied to the strain body 20. The force and moment were applied from the input parts 24a to 24d (see FIG. 9 and the like) of the strain body 20. FIGS. 16A to 18B show simulation results for the stress generated in the sensor chip 10 when the forces and moments shown in FIGS. 14 and 15 are applied. In FIG. 16A to FIG. 18B, the tensile normal stress is indicated by “+”, and the compressive normal stress is indicated by “−”.

When the force Fx is applied in the direction from X1 to X2 along the X axis, the strain generating body 20 is deformed as shown in FIG. 14, and stress as shown in FIG. Specifically, the detection beams 13k and 13e are distorted in the direction of the force Fx by application of the force Fx.

Here, since the piezoresistive elements FxR1 and FxR2 are located on the X1 side from the longitudinal center of the detection beam 13k, a tensile vertical stress is generated and the resistance value is increased. On the other hand, since the piezoresistive elements FxR3 and FxR4 are located on the X2 side from the longitudinal center of the detection beam 13e, compressive vertical stress is generated and the resistance value is reduced. As a result, the balance of the piezoresistive elements FxR1 to FxR4 is lost, so that a voltage is output from the bridge circuit shown in FIG. 16A and the force Fx can be detected.

Although the

detection beams

13d and 13j are also distorted in the direction of the force Fx, little or no stress is generated at the positions of the piezoresistive elements MyR1 and MyR2 and the piezoresistive elements MyR3 and MyR4. Therefore, the balance of the bridge is maintained, and no voltage is output from the bridge circuit of the moment My shown in FIG. 18A.

When a force Fy is applied in the direction from Y1 to Y2 along the Y axis, stress as shown in FIG. 16B is generated in the sensor chip 10. Specifically, the detection beams 13b and 13h are distorted in the direction of the force Fy by the application of the force Fy.

Here, since the piezoresistive elements FyR3 and FyR4 are located on the Y1 side from the longitudinal center of the detection beam 13b, a tensile vertical stress is generated and the resistance value is increased. On the other hand, since the piezoresistive elements FyR1 and FyR2 are located on the Y2 side from the longitudinal center of the detection beam 13h, compressive vertical stress is generated and the resistance value is reduced. As a result, the balance of the piezoresistive elements FyR1 to FyR4 is lost, so that a voltage is output from the bridge circuit shown in FIG. 16B and the force Fy can be detected.

For the same reason as the moment My, no voltage is output from the bridge circuit of the moment Mx shown in FIG. 17B.

When the force Fz is applied in the direction from Z2 to Z1 along the Z axis, the strain generating body 20 is deformed as shown in FIG. 14, and a stress as shown in FIG. Specifically, the

detection beams

13a, 13b, 13g, 13h, 13d, 13e, 13j, 13k, 13c, 13f, 13l, and 13i are distorted in the direction of the force Fz by applying the force Fz.

Here, a tensile normal stress is generated in the piezoresistive elements FzR1 and FzR4, and the resistance value is increased. Further, compressive normal stress is generated in the piezoresistive elements FzR2 and FzR3, and the resistance value is reduced. As a result, the balance of the piezoresistive elements FzR1 to FzR4 is lost, so that the force Fz can be detected by the bridge circuit shown in FIG. 17A.

For the same reason as described above, a bridge circuit of force Fx shown in FIG. 16A, a bridge circuit of force Fy shown in FIG. 16B, a bridge circuit of moment Mx shown in FIG. 17B, and a bridge circuit of moment My shown in FIG. No voltage is output from the bridge circuit of moment Mz shown in FIG. 18B.

When the moment Mx is applied in the Y2-Z2-Y1 direction with the X axis as the rotation axis, stress as shown in FIG. Specifically, the application of the moment Mx distorts the

detection beams

13g and 13a in the direction of the moment Mx. Therefore, tensile normal stress is generated in the piezoresistive elements MxR1 and MxR2, and the resistance value increases. Further, compressive vertical stress is generated in the piezoresistive elements MxR3 and MxR4, and the resistance value is reduced. Accordingly, the balance of the piezoresistive elements MxR1 to MxR4 is lost, so that the moment Mx can be detected by the bridge circuit shown in FIG. 17B.

For the same reason as described above, no voltage is output from the bridge circuit of force Fy shown in FIG. 16B.

When the moment My is applied in the direction of X1-Z2-X2 with the Y axis as the rotation axis, the strain body 20 is deformed as shown in FIG. 15, and stress as shown in FIG. To do. Specifically, the

detection beams

13j and 13d are distorted in the direction of the moment My by the application of the moment My.

Here, a tensile normal stress is generated in the piezoresistive elements MyR1 and MyR2, and the resistance value increases. In addition, compressive vertical stress is generated in the piezoresistive elements MyR3 and MyR4, and the resistance value decreases. Thereby, the balance of the piezoresistive elements MyR1 to MyR4 is lost, so that the moment My can be detected by the bridge circuit shown in FIG. 18A.

For the same reason as described above, no voltage is output from the bridge circuit of force Fx shown in FIG. 16A.

When the moment Mz is applied in the direction of X2-Y2-X1 with the Z axis as the rotation axis, the strain body 20 is deformed as shown in FIG. 15, and stress as shown in FIG. To do. Specifically, the

detection beams

13a, 13b, 13g, 13h, 13d, 13e, 13j, 13k, 13c, 13f, 13l, and 13i are distorted in the direction of the moment Mz by applying the moment Mz.

Here, a tensile normal stress is generated in the piezoresistive elements MzR1 and MzR4, and the resistance value is increased. Further, compressive vertical stress is generated in the piezoresistive elements MzR2 and MzR3, and the resistance value is reduced. As a result, the balance of the piezoresistive elements MzR1 to MzR4 is lost, so that the moment Mz can be detected by the bridge circuit shown in FIG. 18B.

For the same reason as described above, the force Fx bridge circuit shown in FIG. 16A, the force Fy bridge circuit shown in FIG. 16B, the moment Mx bridge circuit shown in FIG. 17B, and the moment My bridge circuit shown in FIG. No voltage is output.

As described above, in the sensor chip 10, when displacement (force or moment) is input to the power point, bending and torsional stress corresponding to the input is generated in the predetermined detection beam. The resistance value of the piezoresistive element arranged at a predetermined position of the detection beam is changed by the generated stress, and the output voltage from each bridge circuit formed in the sensor chip 10 can be obtained from the electrode 15. Further, the output voltage of the electrode 15 can be obtained outside via the input / output substrate 30.

Further, in the sensor chip 10, since one bridge circuit is formed for each axis, the output of each axis can be obtained without combining the outputs. As a result, multi-axis displacement can be detected and output by a simple method that does not require complicated calculations and signal processing.

Also, the piezoresistive elements are divided into different detection beams depending on the type of input. Thereby, the sensitivity of an arbitrary axis | shaft can be adjusted independently by changing the rigidity (thickness and width | variety) of the applicable detection beam.

In this specification, the terms “parallel”, “vertical”, “orthogonal”, “same plane”, etc. are strictly “parallel”, “vertical”, “orthogonal”, “same plane”, etc. In addition to the above, the case of “parallel”, “vertical”, “orthogonal”, “same plane”, etc. is also included. That is, a mode in which there is variation within a range in which the operation and effect of the present embodiment can be obtained is also included.

<Variation 1 of the first embodiment>
In the first modification of the first embodiment, an example of a force sensor device including a force receiving plate is shown. In the first modification of the first embodiment, the description of the same components as those of the already described embodiments may be omitted.

FIG. 19 is a perspective view illustrating a force sensor device according to Modification 1 of the first embodiment. 20A is a plan view illustrating a force sensor device according to Modification 1 of the first embodiment, and FIG. 20B is a cross-sectional view taken along line BB in FIG. 20A. Referring to FIGS. 19, 20A, and 20B, the force sensor device 1A is different from the force sensor device 1 in that a force receiving plate 40 is provided on the input portions 24a to 24d of the strain body 20. .

Four recesses 40x are provided on the lower surface side of the force receiving plate 40. Further, four concave portions 40y are provided on the upper surface side of the force receiving plate 40 at positions substantially overlapping with the respective concave portions 40x in plan view. The four concave portions 40x are arranged so as to cover the input portions 24a to 24d of the strain body 20, and the bottom surfaces of the concave portions 40x are in contact with the upper surfaces of the input portions 24a to 24d.

With such a structure, the force receiving plate 40 and the strain body 20 can be positioned. The recess 40y can be used for positioning when the force sensor device 1A is attached to a robot or the like.

As the material of the force receiving plate 40, for example, SUS (stainless steel) 630 or the like can be used. The force receiving plate 40 can be fixed to the strain body 20 by welding, bonding, screwing, or the like, for example.

Thus, by providing the force receiving plate 40, it is possible to input force from the outside to the input portions 24a to 24d of the strain generating body 20 via the force receiving plate 40.

<Modification 2 of the first embodiment>
In the second modification of the first embodiment, an example of a sensor chip different from the first embodiment is shown. In the second modification of the first embodiment, the description of the same components as those of the already described embodiment may be omitted.

21A is a plan view of the sensor chip 50 viewed from the upper side in the Z-axis direction, and FIG. 21B is a bottom view of the sensor chip 50 viewed from the lower side in the Z-axis direction. In FIG. 21B, the surface of the same height is shown with the same satin pattern for convenience.

The sensor chip 50 shown in FIG. 21A and FIG. 21B is a MEMS sensor chip that can detect a maximum of six axes with one chip, like the sensor chip 10, and can be manufactured from an SOI substrate or the like. The planar shape of the sensor chip 50 can be a square of about 3000 μm square, for example. In the force sensor device 1, a sensor chip 50 can be used instead of the sensor chip 10.

The sensor chip 50 includes five columnar support portions 51a to 51e. The planar shape of the support parts 51a to 51e can be a square of about 500 μm square, for example. Support portions 51 a to 51 d as first support portions are arranged at the four corners of the sensor chip 50. The support part 51e, which is the second support part, is arranged at the center of the support parts 51a to 51d.

The support portions 51a to 51e can be formed from, for example, an active layer, a BOX layer, and a support layer of an SOI substrate, and the thickness of each can be about 500 μm, for example.

Between the

support portions

51a and 51b, there are provided reinforcing beams 52a for reinforcing the structure, both ends of which are fixed to the

support portions

51a and 51b (to connect adjacent support portions). It has been. Between the support part 51b and the support part 51c, both ends of the support part 51b and the support part 51c are fixed (to connect adjacent support parts), and a reinforcing beam 52b for reinforcing the structure is provided. It has been.

Between the support portion 51c and the support portion 51d, there is provided a reinforcing beam 52c that is fixed at both ends to the support portion 51c and the support portion 51d (connects adjacent support portions) and reinforces the structure. It has been. Between the support part 51d and the support part 51a, both ends are fixed to the support part 51d and the support part 51a (adjacent support parts are connected), and a reinforcing beam 52d for reinforcing the structure is provided. It has been.

In other words, the four reinforcing

beams

52a, 52b, 52c, and 52d, which are the first reinforcing beams, are formed in a frame shape, and the corners forming the intersections of the reinforcing beams are the

support portions

51b, 51c, 51d. 51a.

The reinforcing beams 52a to 52d can be formed of, for example, an active layer, a BOX layer, and a support layer of an SOI substrate. The thickness (width in the short direction) of the reinforcing beams 52a to 52d can be set to about 30 μm, for example. The upper surfaces of the reinforcing beams 52a to 52d are substantially flush with the upper surfaces of the support portions 51a to 51e.

On the other hand, the lower surfaces of the reinforcing beams 52a to 52d are recessed to the upper surface side by about several tens of μm from the lower surfaces of the support portions 51a to 51e and the lower surfaces of the force points 54a to 54d. This is to prevent the lower surfaces of the reinforcing beams 52a to 52d from coming into contact with the opposing surface of the strain body 20 when the sensor chip 50 is bonded to the strain body 20.

As described above, the rigidity of the sensor chip 50 as a whole can be increased by disposing the reinforcing beam having a high rigidity formed thicker than the detection beam separately from the detection beam for detecting the strain. This makes it difficult to deform other than the detection beam with respect to the input, so that good sensor characteristics can be obtained.

Inside the reinforcing beam 52a between the support portion 51a and the support portion 51b, both ends are fixed to the support portion 51a and the support portion 51b (adjacent to each other) in parallel with the reinforcing beam 52a with a predetermined interval. Detection beams 53a for detecting strain are provided.

Between the detection beam 53a and the support portion 51e, a frame-shaped detection beam 53b having a predetermined distance from the detection beam 53a and the support portion 51e and having a longitudinal direction parallel to the detection beam 53a is provided. Yes. The detection beam 53b is connected to a substantially central portion in the longitudinal direction of the detection beam 53a and a substantially central portion of one side of the support portion 51e facing the detection beam 53a, and is approximately in the longitudinal direction of the detection beam 53a. The detection beam 53c extending in the vertical direction is held at a substantially central portion in the longitudinal direction.

Inside the reinforcing beam 52b between the support part 51b and the support part 51c, both ends are fixed to the support part 51b and the support part 51c (adjacent to each other) in parallel with the reinforcing beam 52b with a predetermined distance therebetween. A detecting beam 53d for detecting strain is provided.

Between the detection beam 53d and the support portion 51e, there is provided a frame-shaped detection beam 53e that is spaced apart from the detection beam 53d and the support portion 51e and whose longitudinal direction is parallel to the detection beam 53d. Yes. The detection beam 53e is substantially in the longitudinal direction of the detection beam 53d, which connects between a substantially central portion in the longitudinal direction of the detection beam 53d and a substantially central portion of one side of the support portion 51e facing the detection beam 53d. The detection beam 53f extending in the vertical direction is held at a substantially central portion in the longitudinal direction.

Inside the reinforcing beam 52c between the support portion 51c and the support portion 51d, both ends are fixed to (adjacent to) the support portion 51c and the support portion 51d in parallel with the reinforcing beam 52c at a predetermined interval. A detecting beam 53g for detecting strain is provided.

Between the detection beam 53g and the support portion 51e, a frame-shaped detection beam 53h having a predetermined distance from the detection beam 53g and the support portion 51e and having a longitudinal direction parallel to the detection beam 53g is provided. Yes. The detection beam 53h is approximately in the longitudinal direction of the detection beam 53g that connects between the substantially central portion in the longitudinal direction of the detection beam 53g and the substantially central portion of one side of the support portion 51e facing the detection beam 53g. The detection beam 53i extending in the vertical direction is held at a substantially central portion in the longitudinal direction.

Inside the reinforcing beam 52d between the support portion 51d and the support portion 51a, both ends thereof are fixed to the support portion 51d and the support portion 51a in parallel with a predetermined distance (adjacent to each other). A support beam 53j for detecting strain is provided.

Between the detection beam 53j and the support portion 51e, a frame-shaped detection beam 53k whose longitudinal direction is parallel to the detection beam 53j is provided with a predetermined distance from the detection beam 53j and the support portion 51e. Yes. The detection beam 53k is approximately in the longitudinal direction of the detection beam 53j that connects between the substantially central portion of the detection beam 53j in the longitudinal direction and the substantially central portion of one side of the support portion 51e facing the detection beam 53j. The detection beam 53l extending in the vertical direction is held at a substantially central portion in the longitudinal direction.

The detection beams 53a to 53l are provided on the upper end side in the thickness direction of the support portions 51a to 51e, and can be formed from, for example, an active layer of an SOI substrate. The thickness (width in the short direction) of the detection beams 53a to 53l can be set to, for example, about 150 μm. The upper surfaces of the detection beams 53a to 53l are substantially flush with the upper surfaces of the support portions 51a to 51e. The thickness of each of the detection beams 53a to 53l can be set to about 50 μm, for example.

A force point 54a is provided on the lower surface side (intersection of the detection beam 53a and the detection beam 53c) of the central portion in the longitudinal direction of the detection beam 53a. The detection beams 53a, 53b and 53c and the force point 54a form a set of detection blocks.

A force point 54b is provided on the lower surface side (intersection of the detection beam 53d and the detection beam 53f) of the central portion in the longitudinal direction of the detection beam 53d. The detection beams 53d, 53e, and 53f and the force point 54b constitute a set of detection blocks.

A force point 54c is provided on the lower surface side (intersection of the detection beam 53g and the detection beam 53i) of the central portion in the longitudinal direction of the detection beam 53g. The detection beams 53g, 53h, and 53i and the force point 54c form a set of detection blocks.

A force point 54d is provided on the lower surface side (intersection of the detection beam 53j and the detection beam 53l) of the central portion in the longitudinal direction of the detection beam 53j. The detection beams 53j, 53k, and 53l and the force point 54d form a set of detection blocks.

The force points 54a to 54d are places where an external force is applied, and can be formed from, for example, a BOX layer and a support layer of an SOI substrate. The lower surfaces of the force points 54a to 54d are substantially flush with the lower surfaces of the support portions 51a to 51e.

In this way, by taking in the force from the four force points 54a to 54d, different beam deformations can be obtained for each type of force, so a sensor with good separation of 6 axes can be realized.

FIG. 22 is a diagram illustrating the arrangement of the piezoresistive elements of the sensor chip 50. Piezoresistive elements are arranged at predetermined positions of the respective detection blocks corresponding to the four force points 54a to 54d.

Specifically, referring to FIGS. 21A, 21B, and 22, in the detection block corresponding to the force point 54a, the piezoresistive elements MxR3 and MxR4 are on a line that bisects the detection beam 53a in the longitudinal direction. In addition, the detection beam 53c is arranged at a symmetrical position with respect to a line that bisects the beam in the longitudinal direction. The piezoresistive elements FyR3 and FyR4 are located on the detection beam 53a side of the opening of the frame-shaped detection beam 53b and are symmetric with respect to a line that bisects the detection beam 53c in the longitudinal direction. It is arranged in the position.

In the detection block corresponding to the force point 54b, the piezoresistive elements MyR3 and MyR4 are on a line that bisects the detection beam 53d in the longitudinal direction and bisects the detection beam 53f in the longitudinal direction. It is arranged at a symmetrical position with respect to the line. The piezoresistive elements FxR3 and FxR4 are on the detection beam 53d side of the opening of the frame-shaped detection beam 53e, and are symmetric with respect to a line that bisects the detection beam 53f in the longitudinal direction. It is arranged in the position.

Further, MzR3 and MzR4 are arranged on the support portion 51e side with respect to the detection beam 53e and symmetrically with respect to a line that bisects the detection beam 53f in the longitudinal direction. FzR3 and FzR4 are on a line that bisects the detection beam 53f in the longitudinal direction, and are symmetrical with respect to a line that bisects the opening of the frame-shaped detection beam 53e in the longitudinal direction. Placed in position.

In the detection block corresponding to the force point 54c, the piezoresistive elements MxR1 and MxR2 are on a line that bisects the detection beam 53g in the longitudinal direction and bisect the detection beam 53i in the longitudinal direction. It is arranged at a symmetrical position with respect to the line. The piezoresistive elements FyR1 and FyR2 are on the detection beam 53g side with respect to the opening of the frame-shaped detection beam 53h, and are symmetrical with respect to a line that bisects the detection beam 53i in the longitudinal direction. It is arranged in the position.

In the detection block corresponding to the force point 54d, the piezoresistive elements MyR1 and MyR2 are on a line that bisects the detection beam 53j in the longitudinal direction and bisects the detection beam 53l in the longitudinal direction. It is arranged at a symmetrical position with respect to the line. Further, the piezoresistive elements FxR1 and FxR2 are on the detection beam 53j side with respect to the opening of the frame-shaped detection beam 13k and are symmetric with respect to a line that bisects the detection beam 53l in the longitudinal direction. It is arranged in the position.

Further, MzR1 and MzR2 are arranged on the support portion 51e side with respect to the detection beam 53k and symmetrically with respect to a line that bisects the detection beam 53l in the longitudinal direction. FzR1 and FzR2 are on a line that bisects the detection beam 53l in the longitudinal direction and are symmetrical with respect to a line that bisects the opening of the frame-shaped detection beam 53k in the longitudinal direction. Placed in position.

As described above, in the sensor chip 50, similarly to the sensor chip 10, a plurality of piezoresistive elements are separately arranged in each detection block. As a result, similar to the sensor chip 10, based on changes in the outputs of a plurality of piezoresistive elements arranged on a predetermined beam according to the direction (axial direction) of the force applied (transmitted) to the force points 54a to 54d. Thus, it is possible to detect up to six axes of displacement in a predetermined axial direction.

<Modification 3 of the first embodiment>
Modification 3 of the first embodiment shows an example of a force sensor device that does not use a strain generating body. Note that in the third modification of the first embodiment, the description of the same components as those of the already described embodiments may be omitted.

23A to 23C are perspective views illustrating a force sensor device according to Modification 3 of the first embodiment. Referring to FIGS. 23A to 23C, the force sensor device 1B includes a sensor chip 10, a force receiving plate 60, and a package. A force receiving plate 60 is bonded onto the sensor chip 10, and the sensor chip 10 is held in the package 70. The force receiving plate 60 can be formed of glass, for example. The package 70 can be formed of ceramics, for example.

The force receiving plate 60 has a substantially circular main body 61 and four

protrusions

61 a, 61 b, 61 c and 61 d provided on the lower surface side of the main body 61. The protrusion 61a is in contact with the region corresponding to the force point 14a on the upper surface of the detection beam 13a. The protrusion 61b is in contact with a region corresponding to the force point 14d on the upper surface of the detection beam 13j. The protrusion 61c is in contact with a region corresponding to the force point 14c on the upper surface of the detection beam 13g. The protrusion 61d is in contact with the region corresponding to the force point 14b on the upper surface of the detection beam 13d.

In the force sensor device 1B, an external force can be applied to the sensor chip 10 via the force receiving plate 60 without using a strain body by adopting the configuration as shown in FIGS. 23A to 23C.

The force sensor device 1B may be a manufacturing process in which the force receiving plate 60 is joined after the sensor chip 10 is completed, or a manufacturing process as described below. That is, a glass wafer (same size as the sensor chip wafer) to be the force receiving plate 60 is anodically bonded to the sensor chip wafer before dicing on which the sensor chip 10 is formed. The sensor chip 10 and the force receiving plate 60 can be formed simultaneously by dicing the anodic bonded sensor chip wafer and the glass wafer at the same time.

<Modification 4 of the first embodiment>
The fourth modification of the first embodiment shows another example of a force sensor device that does not use a strain generating body. Note that in the fourth modification of the first embodiment, the description of the same components as those of the already described embodiments may be omitted.

24A and 24B are perspective views illustrating a force sensor device according to Modification 4 of the first embodiment. Referring to FIGS. 24A and 24B, the force sensor device 1C includes a sensor chip 10 and a column structure 80. The sensor chip 10 is bonded onto the column structure 80. The column structure 80 can be formed of, for example, silicon, glass, metal, or the like.

The pillar structure 80 has a base 81 and nine pillars 82a to 82i arranged on the base 81 at substantially equal intervals. The

pillars

82 a, 82 c, 82 e, and 82 g are disposed at the four corners of the base 81. The column 82 i is disposed at the center of the base 81. The column 82b is disposed between the column 82a and the column 82c. The column 82d is disposed between the column 82c and the column 82e. The column 82f is disposed between the column 82e and the column 82g. The column 82h is disposed between the column 82g and the column 82a.

In the force sensor device 1C, an external force can be directly applied to the sensor chip 10 without using a strain generating body by adopting the configuration as shown in FIGS. 24A and 24B. Note that the force receiving plate 60 may be provided on the sensor chip 10 as in the force sensor device 1B.

It should be noted that the force sensor device 1C may be a manufacturing process in which the column structure 80 is joined after the sensor chip 10 is completed, or a manufacturing process as described below. That is, a glass wafer or silicon wafer (same size as the sensor chip wafer) to be the column structure 80 is anodically bonded to the sensor chip wafer before dicing on which the sensor chip 10 is formed. The sensor chip 10 and the column structure 80 can be formed simultaneously by dicing the anodic bonded sensor chip wafer and the glass wafer or silicon wafer at the same time.

Also, the force sensor device may be configured to include both the force receiving plate 60 shown in FIGS. 23A to 23C and the column structure 80 shown in FIGS. 24A and 24B. In this case, for example, a glass wafer to be the force receiving plate 60 is anodically bonded to one surface side of the sensor chip wafer on which the sensor chip 10 is formed, and a glass wafer or silicon wafer to be the column structure 80 on the other surface side. Are anodically bonded. Then, after anodic bonding, the force receiving plate 60, the sensor chip 10, and the column structure 80 are formed by dicing in a state where the sensor chip wafer is sandwiched between the glass wafer or the silicon wafer to be the force receiving plate 60 and the column structure 80. They can be formed simultaneously.

<Modification 5 of the first embodiment>
Modification 5 of the first embodiment shows another example of a sensor chip different from the first embodiment. Note that in the fifth modification of the first embodiment, description of the same components as those of the already described embodiments may be omitted.

25A is a perspective view of the sensor chip 110 viewed from the upper side in the Z-axis direction, and FIG. 25B is a plan view of the sensor chip 110 viewed from the upper side in the Z-axis direction. 26A is a perspective view of the sensor chip 110 viewed from the lower side in the Z-axis direction, and FIG. 26B is a bottom view of the sensor chip 110 viewed from the lower side in the Z-axis direction. In FIG. 26B, the surface of the same height is shown with the same satin pattern for convenience.

Similar to the sensor chip 10, the sensor chip 110 shown in FIGS. 25A, 25B, 26A, and 26B is a MEMS sensor chip that can detect up to six axes, and is formed from a semiconductor substrate such as an SOI substrate. ing. The planar shape of the sensor chip 110 can be a square of about 3000 μm square, for example.

The basic beam structure of the sensor chip 110 is the same as that of the sensor chip 10. The support portions 111a to 111e of the sensor chip 110 correspond to the support portions 11a to 11e of the sensor chip 10.

Similarly, the reinforcing beams 112a to 112h of the sensor chip 110 correspond to the reinforcing beams 12a to 12h of the sensor chip 10. Similarly, the detection beams 113a to 113l of the sensor chip 110 correspond to the detection beams 13a to 13l of the sensor chip 10. Similarly, the force points 114 a to 114 d of the sensor chip 110 correspond to the force points 14 a to 14 d of the sensor chip 10.

In the sensor chip 110, the widths of the first detection beams (

detection beams

113a, 113d, 113g, and 113j) and the second detection beams (

detection beams

113b, 113e, 113h, and 113k) are: The width is smaller than the width of the third detection beam (

detection beams

113c, 113f, 113i, and 113l).

The lengths of the first detection beams (

detection beams

113a, 113d, 113g, and 113j) and the second detection beams (

detection beams

113b, 113e, 113h, and 113k) are the third lengths. This is longer than the length of the detection beams (

detection beams

113c, 113f, 113i, and 113l).

Also, comparing FIGS. 25A and 25B with FIGS. 3A and 3B, it can be seen that the sensor chip 110 and the sensor chip 10 have different widths and lengths of the detection beams. For example, the detection beam 113a is narrower (about 0.67 times) and longer (about 1.36 times) than the detection beam 13a. Similarly, the

detection beams

113d, 113g, and 113j are narrower (about 0.67 times) and longer (1.36 times) than the

detection beams

13d, 13g, and 13j. degree).

Further, the detection beam 113b has a narrowest width (about 0.47 times) and a length (about 2.9 times) as compared with the detection beam 13b. Similarly, the

detection beams

113e, 113h, and 113k have a narrowest width (about 0.47 times) and a longer length than the

detection beams

13e, 13h, and 13k (2). .9 times). However, in the detection beams 113b, 113e, 113h, and 113k, the connection portions with the other beams are formed thicker than the most detail in order to maintain the strength.

Further, the length of the detection beam 113c is shorter than that of the detection beam 13c (about 0.5 times). The detection beam 113c has the same average width as the detection beam 13c, but is different in that it has a portion that gradually decreases toward the support portion 111e. Similarly, the lengths of the detection beams 113f, 113i, and 113l are shorter than the

detection beams

13f, 13i, and 13l (about 0.5 times). The detection beams 13f, 13i, and 13l have the same average width as the detection beam 13c, but are different in that they have a portion that gradually decreases toward the support portion 111e.

Further, by shortening the detection beams 113c, 113f, 113i, and 113l and bringing the detection beams 113b, 113e, 113h, and 113k closer to the

detection beams

113a, 113d, 113g, and 113j, the support portion The area of 111e is larger than the area of the support part 11e.

Due to the above differences, when the same strain (displacement) is input, the

detection beams

113a, 113d, 113g, and 113j reduce the stress generated in the beams more than the

detection beams

13a, 13d, 13g, and 13j. Thus, the detection beams 113b, 113e, 113h, and 113k can reduce the stress generated in the beams more than the detection beams 13b, 13e, 13h, and 13k.

Accordingly, when a large strain (displacement) is input, the load resistance of the

detection beams

113a, 113d, 113g, and 113j can be made larger than the load resistance of the

detection beams

13a, 13d, 13g, and 13j. it can. Further, the load resistance of the detection beams 113b, 113e, 113h, and 113k can be made larger than the load resistance of the detection beams 13b, 13e, 13h, and 13k.

Particularly, the detection beams 113c, 113f, 113i, and 113l are shortened, and the detection beams 113b, 113e, 113h, and 113k are brought closer to the

detection beams

113a, 113d, 113g, and 113j. As a result, the detection beams 113b, 113e, 113h, and 113k can be made significantly thinner and longer than the detection beams 13b, 13e, 13h, and 13k. The load capacity of the

beams

113b, 113e, 113h, and 113k can be greatly improved.

FIG. 27 is a diagram illustrating the arrangement of the piezoresistive elements of the sensor chip 110. Referring to FIGS. 25A, 25B, and 27, in the detection block corresponding to the force point 14a, the piezoresistive elements MxR3 and MxR4 are on a line that bisects the detection beam 113a in the longitudinal direction and is detected. In the region near the detection beam 113c of the detection beam 113a, the detection beam 113c is arranged at a symmetrical position with respect to a line that bisects the longitudinal direction (Y direction). Further, the piezoresistive elements FyR3 and FyR4 are detected in a region closer to the reinforcing beam 112a than the line that bisects the detection beam 113a in the longitudinal direction and far from the detection beam 113c of the detection beam 113a. The beam 113c is arranged at a symmetrical position with respect to a line bisecting in the longitudinal direction.

In the detection block corresponding to the force point 14b, the piezoresistive elements MyR3 and MyR4 are on a line that bisects the detection beam 113d in the longitudinal direction and is close to the detection beam 113f of the detection beam 113d. In FIG. 5, the detection beam 113f is arranged symmetrically with respect to a line that bisects in the longitudinal direction (X direction). Further, the piezoresistive elements FxR3 and FxR4 are detected in a region closer to the reinforcing beam 112b than the line that bisects the detection beam 113d in the longitudinal direction and far from the detection beam 113f of the detection beam 113d. The beams 113f are arranged at positions symmetrical with respect to a line that bisects the beam in the longitudinal direction.

Further, the piezoresistive elements MzR3 and MzR4 are detected in a region closer to the detection beam 113f than the line that bisects the detection beam 113d in the longitudinal direction and close to the detection beam 113f of the detection beam 113d. The beam 113f is arranged at a symmetrical position with respect to a line that bisects the beam in the longitudinal direction. The piezoresistive elements FzR2 and FzR3 are on the support portion 111e side with respect to the line that bisects the detection beam 113e in the longitudinal direction and in the region near the detection beam 113f of the detection beam 113e. Are arranged symmetrically with respect to a line that bisects in the longitudinal direction.

In the detection block corresponding to the force point 14c, the piezoresistive elements MxR1 and MxR2 are on a line that bisects the detection beam 113g in the longitudinal direction and is close to the detection beam 113i of the detection beam 113g. Are arranged symmetrically with respect to a line that bisects the detection beam 113i in the longitudinal direction (Y direction). Further, the piezoresistive elements FyR1 and FyR2 are detected in a region closer to the reinforcing beam 112c than the line that bisects the detection beam 113g in the longitudinal direction and far from the detection beam 113i of the detection beam 113g. The beam 113i is arranged at a symmetrical position with respect to a line bisecting in the longitudinal direction.

In the detection block corresponding to the force point 14d, the piezoresistive elements MyR1 and MyR2 are on a line that bisects the detection beam 113j in the longitudinal direction and is close to the detection beam 113l of the detection beam 113j. Are arranged symmetrically with respect to a line that bisects the detection beam 113l in the longitudinal direction (X direction). Further, the piezoresistive elements FxR1 and FxR2 are detected in a region closer to the reinforcing beam 112d than the line that bisects the detection beam 113j in the longitudinal direction and far from the detection beam 113l of the detection beam 113j. The beam 113l is arranged in a symmetrical position with respect to a line bisecting in the longitudinal direction.

Further, the piezoresistive elements MzR1 and MzR2 are detected in a region closer to the detection beam 113k than the line that bisects the detection beam 113j in the longitudinal direction and close to the detection beam 113l of the detection beam 113j. The beam 113l is arranged in a symmetrical position with respect to a line bisecting in the longitudinal direction. The piezoresistive elements FzR1 and FzR4 are on the support portion 111e side with respect to a line that bisects the detection beam 113k in the longitudinal direction and in the region far from the detection beam 113l of the detection beam 113k. Are arranged symmetrically with respect to a line that bisects in the longitudinal direction.

As described above, in the sensor chip 110, like the sensor chip 10, a plurality of piezoresistive elements are separately arranged in each detection block. Thus, similar to the sensor chip 10, based on the change in resistance of a plurality of piezoresistive elements arranged on a predetermined beam according to the direction (axial direction) of the force applied (transmitted) to the force points 114a to 114d. Thus, it is possible to detect up to six axes of displacement in a predetermined axial direction.

In the sensor chip 110, a dummy piezoresistive element is arranged in addition to the piezoresistive element used for detecting the strain. The dummy piezoresistive elements are arranged so that all the piezoresistive elements including the piezoresistive elements used for strain detection are point-symmetric with respect to the center of the support portion 111e.

FIG. 28A to FIG. 31 are diagrams for explaining an improvement in load resistance in the sensor chip 110. FIG. FIG. 28A is a simulation result of a stress generation distribution when a force Fx in the X-axis direction is applied in the sensor chip 10, and the right diagram is an enlarged view of the broken line portion of the left diagram. FIG. 28B is a simulation result of a stress generation distribution when a force Fx in the X-axis direction is applied to the sensor chip 110, and the right diagram is an enlarged view of the broken line portion of the left diagram.

As shown in FIG. 28A, in the sensor chip 10, a detection beam 13k that is short and hardly bent is a stress concentration portion. As shown in FIG. 28B, in the sensor chip 110, the detection beam 113k is thinner and longer than the detection beam 13k. In addition, the detection beam 113j is made thinner and longer than the detection beam 13j.

The detection beam 113k, the detection beam 13k, the detection beam 113j, and the detection beam 13j have been described above. However, the detection beam 113a, the detection beam 13a, the detection beam 113b, the detection beam 13b, and the detection beam are described. The same applies to 113d, the detection beam 13d, the detection beam 113e, the detection beam 13e, the detection beam 113g, the detection beam 13g, the detection beam 113h, and the detection beam 13h.

The ratio of the length of the detecting beam 113j shown in FIG. 29 _{L 1} and the length _{L 2} of the detecting beam 113k (

detection beam

113a, 113d, the length of 113g and

detection beams

113b, 113e, and the length of 113h the ratio is similar), and the ratio of the average width _{W 2} of the detection beam 113k and the average width _{W 1} of the detection beam 113j (

detection beam

113b, 113e, the average width of 113h the

detection beam

113a, 113d, of 113g By adjusting the ratio to the average width, the maximum stress generated in the detection beam can be made equal to or less than that of the sensor chip 10.

FIG. 30A shows a simulation of the maximum stress generated in the stress concentrated portion of the sensor chip 110 with L ₂ / L ₁ as a parameter when the maximum stress generated in the stress concentrated portion shown in FIG. 28A in the sensor chip 10 is 100. It is the result. In FIG. 30A, the horizontal axis is L ₂ / L ₁ , and the vertical axis is stress. FIG. 30B shows the relationship between W ₁ / W ₂ and L ₂ / L ₁ for a plot where L ₂ / L ₁ is 0.36 or more and 0.82 or less in FIG. 30A. In FIG. 30B, the horizontal axis is W ₁ / W ₂ and the vertical axis is L ₂ / L ₁ .

As shown in FIG. 30A and FIG. 30B, by setting L ₂ / L ₁ to be 0.36 or more and 0.82 or less and W ₁ / W ₂ to be 5.3 or more and 37.7 or less, in the sensor chip 110, The maximum stress generated in the detection beam can be made equal to or less than that of the sensor chip 10.

As described above, in the sensor chip 110, by selecting the relationship between W ₁ / W ₂ and L ₂ / L ₁ and reducing the rigidity, it is possible to reduce the maximum stress generated in the detection beam. The load resistance of the chip 110 can be improved as compared with the sensor chip 10. By selecting the relationship between W ₁ / W ₂ and L ₂ / L ₁ , for example, as shown in FIG. 31, the load resistance of the sensor chip 110 can be significantly improved compared to the sensor chip 10. (In the example of FIG. 31, it is about 11 times).

32A and 32B are diagrams for explaining the improvement of sensitivity in the sensor chip 110. FIG. As shown in FIGS. 32A and 32B, in the sensor chip 110, unlike the sensor chip 10, no piezoresistive element is arranged on the detection beam 113l (broken line portion) whose deformation due to stress is reduced by shortening the sensor chip 110. The piezoresistive element is disposed in the vicinity of the position where the stress of the

detection beams

113j and 113k is maximum. The same applies to the detection beams 113c, 113f, and 113i.

As a result, as shown in the simulation result of FIG. 32C, the sensor chip 110 can take in stress more efficiently than the sensor chip 10, and the sensitivity (resistance change of the piezoresistive element with respect to the same stress) is improved.

That is, in the sensor chip 110, no piezoresistive element is arranged on the detection beams 113c, 113f, 113i, and 113l whose deformation due to stress is reduced by shortening. Instead, the stresses of the

detection beams

113a, 113d, 113g, and 113j, and the detection beams 113b, 113e, 113h, and 113k, which are thinner and longer than the detection beams 113c, 113f, 113i, and 113l, and are easily bent like a bow, are included. A piezoresistive element is disposed in the vicinity of the position where the maximum is. As a result, the sensor chip 110 can efficiently take in stress, and can improve sensitivity (resistance change of the piezoresistive element with respect to the same stress).

Note that the beam width on the B side of the detection beam 113j shown in FIG. 29 (the same applies to the

detection beams

113a, 113d, and 113g) is set to 75 to 80% of the beam width on the A side. By making the shape tapered toward the side, it is possible to maintain the load resistance while improving the sensor sensitivity. When the beam width on the B side is 75% or less of the beam width on the A side, the load resistance deteriorates and breaks easily. Further, when the beam width on the B side is 80% or more of the beam width on the A side, the sensor sensitivity is deteriorated.

33, FIG. 34A, and FIG. 34B are diagrams for explaining the improvement of other-axis interference (separation between force and moment) in the sensor chip 110. FIG. As shown in FIG. 33, simulation was performed by applying a force Fx in the X-axis direction in the sensor chip 110, and as a result, other-axis characteristics as shown in FIG. 34A were obtained. FIG. 34B shows other-axis characteristics obtained as a result of performing a simulation in which a force Fx in the X-axis direction is applied in the sensor chip 10.

When comparing FIG. 34A and FIG. 34B, a component of the moment My appears when the force Fx is applied in the sensor chip 10 shown in FIG. 34B, but when the force Fx is applied in the sensor chip 110 shown in FIG. 34A. The other-axis component including the component of the moment My is substantially zero.

The reason why the component of the moment My appears in FIG. 34B is that the

detection beams

13a, 13d, and 13g are not easily deformed in the lateral direction because the detection beams 13b, 13e, 13h, and 13k of the sensor chip 10 are thick and short. And 13j are considered to be deformed in the vertical direction.

On the other hand, since the detection beams 113b, 113e, 113h, and 113k of the sensor chip 110 are narrower and longer than the detection beams 13b, 13e, 13h, and 13k of the sensor chip 10, the transverse direction (Fx, Fy) and twist directions (Mx, My) are easily deformed, and the

detection beams

113a, 113d, 113g, and 113j are not deformed in the vertical direction. As a result, as shown in FIG. 34A, the component of the moment My does not appear, and it is considered that the separation between the force and the moment in the translational direction (that is, the other axis characteristics) is improved.

(Simulation of stress)
FIG. 35A, FIG. 35B, FIG. 36A, and FIG. 36B are simulation results on the stress generated in the sensor chip 110 when a force and a moment are applied. In FIG. 35A, FIG. 35B, FIG. 36A, and FIG. 36B, the tensile normal stress is indicated by “+”, and the compressive normal stress is indicated by “−”.

When the force Fx is applied in the direction from X1 to X2 along the X axis, stress as shown in FIG. 35A is generated in the sensor chip 110. Specifically, the detection beams 113d and 113j are distorted in the direction of the force Fx by the application of the force Fx.

Here, since the piezoresistive elements FxR1 and FxR2 are located on the X1 side from the longitudinal center of the detection beam 113d, a tensile vertical stress is generated and the resistance value is increased. On the other hand, since the piezoresistive elements FxR3 and FxR4 are located on the X2 side from the longitudinal center of the detection beam 113j, compressive vertical stress is generated and the resistance value is reduced. As a result, the balance of the piezoresistive elements FxR1 to FxR4 is lost, so that a voltage is output from the bridge circuit shown in FIG. 35A and the force Fx can be detected. The same applies to the force Fy.

When the force Fz is applied in the direction Z2 to Z1 (from the front surface side to the back surface side of the sensor chip 110) along the Z axis, stress as shown in FIG. 35B is generated in the sensor chip 110. Specifically, the

detection beams

113a, 113b, 113g, 113h, 113d, 113e, 113j, 113k, 113c, 113f, 113l, and 113i are distorted in the direction of the force Fz by applying the force Fz.

Here, a tensile normal stress is generated in the piezoresistive elements FzR1 and FzR4, and the resistance value is increased. Further, compressive normal stress is generated in the piezoresistive elements FzR2 and FzR3, and the resistance value is reduced. As a result, the balance of the piezoresistive elements FzR1 to FzR4 is lost, so that the force Fz can be detected by the bridge circuit shown in FIG. 35B.

When the moment My is applied in the X1-Z2-X2 direction with the Y axis as the rotation axis, stress as shown in FIG. 36A is generated in the sensor chip 110. Specifically, the detection beams 113d and 113j are distorted in the direction of the moment My by applying the moment My.

Here, a tensile normal stress is generated in the piezoresistive elements MyR1 and MyR2, and the resistance value increases. In addition, compressive vertical stress is generated in the piezoresistive elements MyR3 and MyR4, and the resistance value decreases. Thereby, the balance of the piezoresistive elements MyR1 to MyR4 is lost, so that the moment My can be detected by the bridge circuit shown in FIG. 36A.

When the moment Mz is applied in the X2-Y2-X1 direction with the Z axis as the rotation axis, stress as shown in FIG. 36B is generated in the sensor chip 110. Specifically, the

detection beams

113a, 113b, 113g, 113h, 113d, 113e, 113j, 113k, 113c, 113f, 113l, and 113i are distorted in the direction of the moment Mz by applying the moment Mz.

Here, a tensile normal stress is generated in the piezoresistive elements MzR1 and MzR4, and the resistance value is increased. Further, compressive vertical stress is generated in the piezoresistive elements MzR2 and MzR3, and the resistance value is reduced. As a result, the balance of the piezoresistive elements MzR1 to MzR4 is lost, so that the moment Mz can be detected by the bridge circuit shown in FIG. 36B.

As described above, in the sensor chip 110, when a displacement (force or moment) is input to the force point, bending and torsional stress corresponding to the input is generated in a predetermined detection beam. The resistance value of the piezoresistive element arranged at a predetermined position of the detection beam changes due to the generated stress, and the output voltage from each bridge circuit formed in the sensor chip 110 can be obtained from the electrode 15. Further, the output voltage of the electrode 15 can be obtained outside via the input / output substrate 30.

In the sensor chip 110, since one bridge circuit is formed for each axis, the output of each axis can be obtained without combining the outputs. As a result, multi-axis displacement can be detected and output by a simple method that does not require complicated calculations and signal processing.

The preferred embodiment has been described in detail above. However, the present invention is not limited to the above-described embodiment, and various modifications and replacements are made to the above-described embodiment without departing from the scope described in the claims. Can be added.

This international application claims priority based on Japanese Patent Application No. 2016-99486 filed on October 7, 2016 and Japanese Patent Application No. 2017-086966 filed on April 26, 2017. The entire contents of Japanese Patent Application No. 2016-199486 and Japanese Patent Application No. 2017-086966 are incorporated herein by reference.

1, 1A, 1B, 1C

Force sensor device

10, 50, 110 Sensor chips 11a to 11e, 51a to 51e, 111a to 111e Support portions 12a to 12h, 52a to 52d, 112a to 112h Reinforcing beams 13a to 13l, 53a ˜53l, 113a˜113l Detection beams 14a˜14d, 54a˜54d, 114a˜114d Force point 15 Electrode 16 Wiring 17 Temperature sensor 20

Strain body

21, 81 Base 22a˜22e, 25a˜25d, 82a˜82i Pillar 23a˜ 23d, 26a to 26d Beam 24a to 24d Input portion 27a to 27d, 61a to 61d Protrusion portion 30 Input /

output substrate

40, 60

Power receiving plate

40x,

40y Recess

41, 42 Adhesive 70 Package 80 Column structure portion

Claims

A sensor chip that detects a maximum six-axis displacement in a predetermined axial direction based on changes in the output of a plurality of strain detection elements arranged on a predetermined beam according to the force applied to the force point or the direction of the displacement. There,
A substrate,
First support portions disposed at four corners of the substrate;
A second support disposed in the center of the substrate;
A first detection beam for connecting adjacent first support portions;
A second detection beam provided in parallel with each of the first detection beams between each of the first detection beams and the second support;
A third detection beam connecting the first detection beam and the second detection beam in a set of the first detection beam and the second detection beam provided in parallel; ,
A force point to which a force is applied, arranged at an intersection of each of the first detection beams and each of the third detection beams;
A plurality of strain detection elements arranged at predetermined positions of the first detection beam, the second detection beam, and the third detection beam;
The displacement in the Z-axis direction that is the thickness direction of the substrate is detected based on at least deformation of the third detection beam,
The displacement in the X-axis direction and the Y-axis direction orthogonal to the Z-axis direction is detected based on deformation of at least one of the first detection beam or the second detection beam. .
A sensor chip that detects a maximum six-axis displacement in a predetermined axial direction based on changes in the output of a plurality of strain detection elements arranged on a predetermined beam according to the force applied to the force point or the direction of the displacement. There,
A substrate,
First support portions disposed at four corners of the substrate;
A second support disposed in the center of the substrate;
A first detection beam for connecting adjacent first support portions;
A second detection beam provided in parallel with each of the first detection beams between each of the first detection beams and the second support;
A third detection beam connecting the first detection beam and the second detection beam in a set of the first detection beam and the second detection beam provided in parallel; ,
A force point to which a force is applied, arranged at an intersection of each of the first detection beams and each of the third detection beams;
A plurality of strain detection elements arranged at predetermined positions of the first detection beam and the second detection beam;
The displacement in the Z-axis direction, which is the thickness direction of the substrate, is detected based on deformation of the first detection beam or the second detection beam,
The displacement in the X-axis direction and the Y-axis direction orthogonal to the Z-axis direction is detected based on deformation of the first detection beam.
A strain detection element that detects the moment in the X-axis direction and the moment in the Y-axis direction is disposed on the first detection beam,
A strain detection element that detects the force in the X-axis direction and the force in the Y-axis direction is disposed on the second detection beam,
2. The sensor chip according to claim 1, wherein a strain detection element for detecting the moment in the Z-axis direction and the force in the Z-axis direction is arranged on the third detection beam.
A strain detecting element that detects the moment in the X-axis direction, the moment in the Y-axis direction, the force in the X-axis direction, the force in the Y-axis direction, and the moment in the Z-axis direction on the first detection beam. And place
The sensor chip according to claim 2, wherein a strain detection element that detects the force in the Z-axis direction is disposed on the second detection beam.
The width of the first detection beam and the second detection beam is narrower than the width of the third detection beam,
3. The sensor chip according to claim 2, wherein lengths of the first detection beam and the second detection beam are longer than a length of the third detection beam. 4.
A first reinforcing beam provided on the outside of the first detection beam in parallel with the first detection beam and connecting the adjacent first support portions;
A second reinforcing beam for connecting the first support portion and the second support portion;
The second reinforcing beam is disposed non-parallel to the first reinforcing beam;
The first reinforcing beam and the second reinforcing beam are formed thicker than the first detecting beam, the second detecting beam, and the third detecting beam,
2. The sensor chip according to claim 1, wherein the second detection beam connects ends of the second reinforcing beams adjacent to each other on the second support portion side.
The first detection beam, the second detection beam, and the third detection beam are provided on the upper end side in the thickness direction of the first support portion and the second support portion,
On the lower end side in the thickness direction of the first support portion and the second support portion, the lower surface of the first support portion, the lower surface of the second support portion, and the lower surface of the force point are flush with each other. ,
On the lower end side, the lower surface of the first reinforcing beam and the lower surface of the second reinforcing beam are lower than the lower surface of the first supporting portion, the lower surface of the second supporting portion, and the lower surface of the force point. The sensor chip according to claim 6, wherein the sensor chip is also recessed toward the upper end side.
The sensor chip according to claim 6, wherein a wiring is formed on an upper surface of one or both of the first reinforcing beam and the second reinforcing beam.
9. The sensor chip according to claim 8, wherein an electrode connected to the wiring is disposed on an upper surface of the first support portion.
The sensor chip is formed from a semiconductor substrate,
It has a temperature sensor composed of a strain detection element and an impurity semiconductor,
The strain detection element constituting the temperature sensor and the strain detection element for displacement detection are arranged in different directions with respect to the crystal orientation of the semiconductor substrate. Sensor chip.
The sensor chip according to claim 10, wherein the temperature sensor is disposed on an upper surface of the first support portion.
A strain body bonded to a sensor chip that detects displacement in a predetermined axial direction,
First pillars arranged at the four corners and deformed by applied force;
A second pillar arranged in the center and not deformed by the applied force;
Four first beams deforming by an applied force, connecting the adjacent first columns;
A second beam projecting inward in the horizontal direction from an inner surface of each first beam and transmitting the deformation of the first column and the first beam to the sensor chip;
A strain generating body comprising: four input portions to which a force is applied, protruding upward from a longitudinal center portion of each of the first beams.
Third pillars provided at the four corners of one surface of the second pillar;
The strain body according to claim 12, further comprising: a fourth column provided at a center of one surface of the second column.
14. The strain generating body according to claim 13, wherein the second beam protrudes inward in the horizontal direction from an inner surface of a central portion in a longitudinal direction of each of the first beams.
14. The strain generating body according to claim 13, wherein a protruding portion that protrudes upward and comes into contact with the sensor chip is provided on a tip side of each of the second beams.
A force sensor device comprising: the sensor chip according to claim 1; and the strain body according to claim 13.
The first support part of the sensor chip is fixed on the third column of the strain body;
The second support part of the sensor chip is fixed on the fourth pillar of the strain body;
The force sensor device, wherein the force point of the sensor chip is fixed to a tip side of the second beam of the strain body.
The force sensor device according to claim 16, wherein the sensor chip is fixed to the strain body so as not to protrude from an upper surface of the first pillar.
An input / output substrate for inputting / outputting signals to / from the sensor chip;
The force sensor device according to claim 16, wherein the input / output substrate is bonded to the strain body so that an electrode is disposed on the first pillar.
19. The force sensor device according to claim 18, wherein a back surface of a region where the electrode of the input / output substrate is formed is bonded to the first pillar with a resin.
The force sensor device according to claim 16, wherein force receiving plates are provided on the four input units.
The force receiving plate is provided with four recesses,
21. The force sensor device according to claim 20, wherein each of the force receiving plates is positioned with respect to the strain generating body by covering each of the concave portions with the input portion.