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WO2017215335A1 - Circuit et procédé de protection contre les courts-circuits de transistor igbt, circuit de commande de transistor igbt et circuit de transistor igbt - Google Patents

Circuit et procédé de protection contre les courts-circuits de transistor igbt, circuit de commande de transistor igbt et circuit de transistor igbt Download PDF

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Publication number
WO2017215335A1
WO2017215335A1 PCT/CN2017/080694 CN2017080694W WO2017215335A1 WO 2017215335 A1 WO2017215335 A1 WO 2017215335A1 CN 2017080694 W CN2017080694 W CN 2017080694W WO 2017215335 A1 WO2017215335 A1 WO 2017215335A1
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WO
WIPO (PCT)
Prior art keywords
igbt
current
driving current
unit
circuit protection
Prior art date
Application number
PCT/CN2017/080694
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English (en)
Chinese (zh)
Inventor
袁金荣
Original Assignee
珠海格力电器股份有限公司
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Filing date
Publication date
Application filed by 珠海格力电器股份有限公司 filed Critical 珠海格力电器股份有限公司
Publication of WO2017215335A1 publication Critical patent/WO2017215335A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Definitions

  • the present invention relates to the field of circuit technologies, and in particular, to an IGBT short circuit protection circuit and method, an IGBT driver and an IGBT circuit.
  • IGBT Insulated Gate Bipolar Transistor
  • the short-circuit protection of the conventional IGBT driver detects the gate voltage Vce(sat) by detecting the voltage at the collector CE terminal of the IGBT at the time of turn-on.
  • the Vce(sat) value is about 2V, which does not reach the short-circuit protection threshold.
  • the current flowing through the collector ie, Ic
  • Vce(sat) changes rapidly, causing Vce(sat) to rise until the short-circuit protection threshold is reached.
  • Self-locking protection is implemented by the signal processing circuit of the IGBT driver.
  • the short circuit protection fails, thereby damaging the IGBT.
  • the short circuit inductance is too large, the current change rate becomes very low. At this time, it is not a short circuit but an overcurrent, and in this case, the short circuit protection will also be lost.
  • the present invention provides an IGBT short circuit protection circuit and method, an IGBT driver, and an IGBT circuit, which can more reliably achieve short circuit protection for an IGBT.
  • an IGBT short circuit protection circuit comprising: a driving current detecting unit for detecting a driving current flowing through an IGBT gate; and a comparing unit for comparing the driving current with a reference current And outputting a comparison result; and a protection unit configured to determine whether to initiate short-circuit protection to the IGBT according to the comparison result.
  • the comparison unit includes a reference current supply unit for supplying the reference current, and a comparator for comparing the drive current and the reference current, and outputting Comparing results.
  • the reference current supply unit is a storage unit for storing the reference current and providing the comparator.
  • the reference current is a maximum value of the driving current according to the normal operation of the IGBT or a previous driving current when the IGBT driver is normally operated.
  • the protection unit Start short circuit protection
  • the protection unit starts short-circuit protection.
  • the protection unit includes a switch, and when the protection unit determines to start the IGBT short-circuit protection according to the comparison result, the PWM pulse is turned off by turning off the switch, thereby turning off the IGBT.
  • an IGBT driver comprising: a driving unit; And the IGBT short circuit protection circuit according to any one of the above.
  • the driving unit is a push-pull pushing stage connected to the gate of the IGBT.
  • an IGBT circuit comprising: an IGBT; and the IGBT driver according to any of the above.
  • the IGBT circuit further includes an IGBT gate resistor; wherein the driving current detecting unit is disposed between the driving unit and the IGBT gate resistor.
  • a method for protecting an IGBT short circuit includes: a driving current detecting step of detecting a driving current flowing through a gate of the IGBT; a comparing step of comparing the driving current with a reference current, and outputting Comparing the result; and a protection step of determining whether to initiate short circuit protection to the IGBT based on the comparison result.
  • the comparing step includes a reference current providing step and a comparing sub-step; the reference current providing step providing the reference current; the comparing sub-step comparing the driving current and the reference current, and Output the comparison result.
  • the value of the driving current is sampled and saved, and the detected driving current is compared with the value of the sampled and saved driving current when the IGBT is next turned on, that is, the upper
  • the primary drive current is compared and the result of the comparison is output.
  • the short circuit protection is started in the protection unit step.
  • the self-locking of the IGBT driving circuit is controlled by detecting the driving current flowing through the IGBT to achieve short-circuit protection of the IGBT.
  • the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the strong electric terminal of the IGBT is solved, and the short-circuit protection is The sampling point does not set the strong end of the IGBT, thus avoiding the strong and weak electric mixing of the driver. In this case, the security risks to the controller are eliminated.
  • the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.
  • FIG. 1 is a block diagram showing the structure of an IGBT short circuit protection circuit in accordance with a preferred embodiment of the present invention.
  • FIG. 2 is a block diagram showing the structure of an IGBT circuit in accordance with a preferred embodiment of the present invention.
  • FIG. 3 is a flow chart of a IGBT short circuit protection method in accordance with a preferred embodiment of the present invention.
  • FIG. 4 is a block flow diagram of a specific embodiment of a short circuit protection method in accordance with the present invention.
  • the gate voltage Vge also rises during the rise of the collector current Ic of the IGBT, which is caused by the Miller effect.
  • the change in the gate voltage Vge during the short circuit causes the gate charge amount Qg to change accordingly, and the required drive current also changes.
  • the short circuit of the IGBT module can be judged by judging the abnormal increase or fluctuation of the drive current.
  • some drivers are provided with a collector voltage Vce caused by suppressing a short circuit. Excessive active clamp circuit, but when the voltage Vce reaches the rated clamp voltage, it will also inject current into the gate of the IGBT, causing a change in the drive current, and thereby determining the short circuit of the IGBT module.
  • the IGBT short-circuit protection circuit P includes a driving current detecting unit 1, a comparing unit 2, and a protection unit 3.
  • the drive current detecting unit 1 is for detecting a drive current flowing through the IGBT, specifically, a drive current flowing through a gate of the IGBT.
  • the comparing unit 2 is configured to compare the driving current with a reference current and output a comparison result.
  • the protection unit 3 is configured to determine whether to initiate short-circuit protection to the IGBT according to the comparison result, for example, controlling the driver self-locking of the IGBT to turn off the IGBT.
  • the self-locking of the IGBT driving circuit is controlled by detecting the driving current flowing through the IGBT to achieve short-circuit protection of the IGBT.
  • the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the strong electric terminal of the IGBT is solved, and the short-circuit protection is
  • the sampling point does not set the strong end of the IGBT, thus avoiding the situation that the driver is strong and weakly mixed, and the safety hazard to the controller is eliminated.
  • the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.
  • the drive current detecting unit 1 is for detecting a drive current flowing through the IGBT, specifically, a drive current flowing through a gate of the IGBT.
  • the drive current detecting unit is, for example, an element capable of realizing current detection such as an ammeter.
  • the comparing unit 2 is configured to compare the driving current with a reference current and output a comparison result.
  • the comparison unit 2 includes a reference current supply unit 21 and a comparator 22.
  • the reference current supply unit 21 is configured to provide the reference current
  • the comparator 21 is configured to compare the drive current and the reference current, and input Compare results.
  • the reference current supply unit 21 is a memory or a register as a storage unit for storing the reference current and supplying it to the comparator 22.
  • the reference current may be an empirical value set according to a driving current under normal operation of the IGBT, for example, a maximum value of a driving current under normal operation of the IGBT, or a normal operation of several seconds after the driver is started, the acquisition driving The current is calculated as the maximum value, or the calculated maximum value is added with a redundant amount, and the like. If the comparison result output by the comparison unit 2 indicates that the detected drive current exceeds the reference current, the protection unit 3 initiates short-circuit protection, for example, causing the driver to self-lock to turn off the IGBT.
  • the reference current may also be the last driving current when the driver stored in the reference current supply unit 21 is normally operated. Specifically, when the driver is in normal operation, the value of the driving current is sampled and saved, and the value of the detected driving current and the sampled and saved driving current when the IGBT is next turned on, that is, the upper The primary drive current is compared and the result of the comparison is output. If the comparison result indicates that the detected driving current exceeds the predetermined range of the previous driving current, the predetermined range is, for example, a redundancy amount, that is, the detected driving current has a larger increase than the previous driving current.
  • the protection unit 3 starts short-circuit protection, for example, the driver is self-locked to turn off the IGBT. If the comparison result indicates that the detected driving current exceeds the value of the last driving current within a predetermined range, it indicates that the IGBT does not have an abnormality, the protection unit 3 does not start the short circuit protection, and the reference current supply unit 21 stores the corresponding Drive current for the next comparison.
  • the protection unit 3 is configured to determine whether to initiate short circuit protection of the IGBT according to the comparison result. Specifically, if the comparison result indicates that the IGBT has an abnormality, for example, the detected driving current exceeds the predetermined range of the previous driving current, the protection unit 3 initiates short-circuit protection to the IGBT, for example, the control driver performs self-locking, thereby turning off the IGBT. . Otherwise, short circuit protection is not activated.
  • the present invention provides an IGBT driver.
  • the IGBT driver includes a driving unit and the IGBT short circuit protection circuit.
  • the drive unit of the IGBT driver is, for example, a push-pull push stage connected to the gate of the IGBT.
  • the IGBT circuit includes an IGBT and the above IGBT driver.
  • the IGBT short circuit protection circuit of the IGBT driver The driving current detecting unit 1 is disposed between the driving unit and the gate resistance of the IGBT.
  • the IGBT circuit includes an IGBT and the IGBT driver.
  • the IGBT driver includes a driving unit 4 and the IGBT short circuit protection circuit P.
  • the IGBT short circuit protection circuit P includes a driving current detecting unit 1, a comparing unit 2 (including a reference current supply unit 21, a comparator 22), and a protection unit 3.
  • the driving current detecting unit 1 is configured to detect a driving current supplied from the driving unit 4, and the comparator 22 compares the detected driving current with a reference current supplied from the reference current supply unit 21, and outputs a comparison result.
  • the protection unit 3 activates the short circuit protection according to the comparison result, and performs self-locking of the IGBT driving circuit, for example, shielding the PMW pulse and setting a low level to turn off the IGBT.
  • the IGBT circuit includes a gate resistance Rg, and the current detecting unit 1 is disposed between the driving unit 4 and the gate resistor Rg for detecting a driving current flowing through a gate of the IGBT.
  • the method includes a driving current detecting step S1, a comparing step S2, and a protecting step S3.
  • the drive current detecting step S1 detects a drive current flowing through the IGBT, specifically, a drive current flowing through the gate of the IGBT.
  • the comparing step S2 compares the driving current with a reference current and outputs a comparison result.
  • the protecting step S3 determines whether to initiate short-circuit protection to the IGBT according to the comparison result, for example, controlling the driver of the IGBT to self-lock to turn off the IGBT.
  • the comparing step S2 in a preferred embodiment, comprises a reference current providing step and a comparing sub-step.
  • the reference current supply step stores and supplies the reference current using, for example, a memory or a register as a memory unit.
  • the comparing substep compares the driving current with the reference current and outputs a comparison result.
  • the reference current may be an empirical value set according to a driving current under normal operation of the IGBT, for example, a maximum value of a driving current under normal operation of the IGBT, or normal after the driver is started. Work for a few seconds, collect the drive current and calculate the maximum value, or the calculated maximum value and then add a redundant amount of values. If the comparison result outputted in the comparison step S2 indicates that the detected drive current exceeds the reference current, then in the protection step S3, short-circuit protection is initiated, for example, causing the driver to self-lock to turn off the IGBT.
  • the reference current may also be the last drive current when the saved driver is in normal operation. Specifically, when the driver is in normal operation, the value of the driving current is sampled and saved, and the value of the detected driving current and the sampled and saved driving current when the IGBT is next turned on, that is, the upper The primary drive current is compared and the result of the comparison is output. If the comparison result indicates that the detected driving current exceeds the predetermined range of the previous driving current, the predetermined range is, for example, a redundancy amount, that is, the detected driving current has a larger increase than the previous driving current. If the IGBT is abnormal, then at step S3, the short-circuit protection is started, for example, the driver is self-locked to turn off the IGBT.
  • the comparison result indicates that the detected driving current exceeds the value of the last driving current within a predetermined range, it indicates that the IGBT does not have an abnormality, then in the protection step S3, the short-circuit protection is not activated, and the reference current supply step is stored. The corresponding drive current is used for the next comparison.
  • FIG. 4 is a block flow diagram showing a specific embodiment of a short circuit protection method in accordance with the present invention.
  • the IGBT driver operates while the short circuit protection circuit is in operation.
  • the first normal drive current signal is stored, and the subsequent drive current, that is, the detected drive current, is further sampled. Further, the detected driving current is compared with the previously stored driving current, and it is determined whether the driving current is abrupt or abnormal. If abnormal, the switching switch is turned on to block the PWM pulse, thereby starting IGBT short-circuit protection.
  • the IGBT short circuit protection circuit and method, IGBT driver, and IGBT circuit of the present invention have been described above.
  • the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the IGBT strong electric terminal is solved, and the sampling due to the short-circuit protection is solved.
  • the point does not set the strong end of the IGBT, thus avoiding the situation that the driver is strong and weakly mixed, eliminating the safety hazard to the controller.
  • the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

La présente invention porte sur un circuit (P) et sur un procédé de protection contre les courts-circuits de transistor bipolaire à porte isolée (IGBT pour Insulated Gate Bipolar Transistor), sur un circuit de commande de transistor IGBT et sur un circuit de transistor IGBT. Le circuit de protection contre les courts-circuits de transistor IGBT (P) comprend : une unité de détection de courant d'attaque (1) utilisée pour détecter un courant d'attaque circulant à travers une porte de transistor IGBT ; une unité de comparaison (2) utilisée pour comparer le courant d'attaque à un courant de référence et pour transmettre un résultat de comparaison ; et une unité de protection (3) utilisée pour déterminer s'il faut commencer une protection contre les courts-circuits pour un transistor IGBT en fonction du résultat de la comparaison. En détectant le courant d'attaque circulant à travers le transistor IGBT, l'auto-verrouillage d'un circuit de commande de transistor IGBT est commandé de sorte à améliorer la fiabilité de la protection contre les courts-circuits pour le transistor IGBT.
PCT/CN2017/080694 2016-06-17 2017-04-17 Circuit et procédé de protection contre les courts-circuits de transistor igbt, circuit de commande de transistor igbt et circuit de transistor igbt WO2017215335A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610436428.XA CN106130520A (zh) 2016-06-17 2016-06-17 Igbt短路保护电路及方法、igbt驱动器以及igbt电路
CN201610436428.X 2016-06-17

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WO2017215335A1 true WO2017215335A1 (fr) 2017-12-21

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU195809U1 (ru) * 2019-03-20 2020-02-05 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Схема подключения первичной стороны драйверного ядра управления igbt-ключом
RU2791087C1 (ru) * 2021-11-08 2023-03-02 Публичное Акционерное Общество "Электровыпрямитель" Драйвер для IGBT-транзистора

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CN106130520A (zh) * 2016-06-17 2016-11-16 珠海格力电器股份有限公司 Igbt短路保护电路及方法、igbt驱动器以及igbt电路
CN108235481B (zh) * 2016-12-22 2021-03-30 佛山市顺德区美的电热电器制造有限公司 一种基于电源输入电压的igbt集电极电压保护方法、装置及电磁炉
CN108666981A (zh) * 2017-03-28 2018-10-16 中国科学院上海微系统与信息技术研究所 一种igbt过流保护电路及方法
JP6264491B1 (ja) * 2017-05-11 2018-01-24 富士電機株式会社 短絡検出装置および装置
US10855263B2 (en) * 2018-08-02 2020-12-01 Texas Instruments Incorporated Miller Clamp driver with feedback bias control
CN112104346B (zh) * 2020-08-31 2021-08-06 电子科技大学 一种igbt高压驱动过流过压保护电路
CN118100380B (zh) * 2024-04-29 2024-08-09 华羿微电子股份有限公司 一种bms有源钳位保护电路及芯片

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU195809U1 (ru) * 2019-03-20 2020-02-05 Федеральное государственное унитарное предприятие Экспериментальный завод научного приборостроения со Специальным конструкторским бюро Российской академии наук Схема подключения первичной стороны драйверного ядра управления igbt-ключом
RU2791087C1 (ru) * 2021-11-08 2023-03-02 Публичное Акционерное Общество "Электровыпрямитель" Драйвер для IGBT-транзистора

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