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WO2017215335A1 - Igbt short-circuit protection circuit and method, igbt driver and igbt circuit - Google Patents

Igbt short-circuit protection circuit and method, igbt driver and igbt circuit Download PDF

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Publication number
WO2017215335A1
WO2017215335A1 PCT/CN2017/080694 CN2017080694W WO2017215335A1 WO 2017215335 A1 WO2017215335 A1 WO 2017215335A1 CN 2017080694 W CN2017080694 W CN 2017080694W WO 2017215335 A1 WO2017215335 A1 WO 2017215335A1
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Prior art keywords
igbt
current
driving current
unit
circuit protection
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PCT/CN2017/080694
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French (fr)
Chinese (zh)
Inventor
袁金荣
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珠海格力电器股份有限公司
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Publication of WO2017215335A1 publication Critical patent/WO2017215335A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Definitions

  • the present invention relates to the field of circuit technologies, and in particular, to an IGBT short circuit protection circuit and method, an IGBT driver and an IGBT circuit.
  • IGBT Insulated Gate Bipolar Transistor
  • the short-circuit protection of the conventional IGBT driver detects the gate voltage Vce(sat) by detecting the voltage at the collector CE terminal of the IGBT at the time of turn-on.
  • the Vce(sat) value is about 2V, which does not reach the short-circuit protection threshold.
  • the current flowing through the collector ie, Ic
  • Vce(sat) changes rapidly, causing Vce(sat) to rise until the short-circuit protection threshold is reached.
  • Self-locking protection is implemented by the signal processing circuit of the IGBT driver.
  • the short circuit protection fails, thereby damaging the IGBT.
  • the short circuit inductance is too large, the current change rate becomes very low. At this time, it is not a short circuit but an overcurrent, and in this case, the short circuit protection will also be lost.
  • the present invention provides an IGBT short circuit protection circuit and method, an IGBT driver, and an IGBT circuit, which can more reliably achieve short circuit protection for an IGBT.
  • an IGBT short circuit protection circuit comprising: a driving current detecting unit for detecting a driving current flowing through an IGBT gate; and a comparing unit for comparing the driving current with a reference current And outputting a comparison result; and a protection unit configured to determine whether to initiate short-circuit protection to the IGBT according to the comparison result.
  • the comparison unit includes a reference current supply unit for supplying the reference current, and a comparator for comparing the drive current and the reference current, and outputting Comparing results.
  • the reference current supply unit is a storage unit for storing the reference current and providing the comparator.
  • the reference current is a maximum value of the driving current according to the normal operation of the IGBT or a previous driving current when the IGBT driver is normally operated.
  • the protection unit Start short circuit protection
  • the protection unit starts short-circuit protection.
  • the protection unit includes a switch, and when the protection unit determines to start the IGBT short-circuit protection according to the comparison result, the PWM pulse is turned off by turning off the switch, thereby turning off the IGBT.
  • an IGBT driver comprising: a driving unit; And the IGBT short circuit protection circuit according to any one of the above.
  • the driving unit is a push-pull pushing stage connected to the gate of the IGBT.
  • an IGBT circuit comprising: an IGBT; and the IGBT driver according to any of the above.
  • the IGBT circuit further includes an IGBT gate resistor; wherein the driving current detecting unit is disposed between the driving unit and the IGBT gate resistor.
  • a method for protecting an IGBT short circuit includes: a driving current detecting step of detecting a driving current flowing through a gate of the IGBT; a comparing step of comparing the driving current with a reference current, and outputting Comparing the result; and a protection step of determining whether to initiate short circuit protection to the IGBT based on the comparison result.
  • the comparing step includes a reference current providing step and a comparing sub-step; the reference current providing step providing the reference current; the comparing sub-step comparing the driving current and the reference current, and Output the comparison result.
  • the value of the driving current is sampled and saved, and the detected driving current is compared with the value of the sampled and saved driving current when the IGBT is next turned on, that is, the upper
  • the primary drive current is compared and the result of the comparison is output.
  • the short circuit protection is started in the protection unit step.
  • the self-locking of the IGBT driving circuit is controlled by detecting the driving current flowing through the IGBT to achieve short-circuit protection of the IGBT.
  • the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the strong electric terminal of the IGBT is solved, and the short-circuit protection is The sampling point does not set the strong end of the IGBT, thus avoiding the strong and weak electric mixing of the driver. In this case, the security risks to the controller are eliminated.
  • the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.
  • FIG. 1 is a block diagram showing the structure of an IGBT short circuit protection circuit in accordance with a preferred embodiment of the present invention.
  • FIG. 2 is a block diagram showing the structure of an IGBT circuit in accordance with a preferred embodiment of the present invention.
  • FIG. 3 is a flow chart of a IGBT short circuit protection method in accordance with a preferred embodiment of the present invention.
  • FIG. 4 is a block flow diagram of a specific embodiment of a short circuit protection method in accordance with the present invention.
  • the gate voltage Vge also rises during the rise of the collector current Ic of the IGBT, which is caused by the Miller effect.
  • the change in the gate voltage Vge during the short circuit causes the gate charge amount Qg to change accordingly, and the required drive current also changes.
  • the short circuit of the IGBT module can be judged by judging the abnormal increase or fluctuation of the drive current.
  • some drivers are provided with a collector voltage Vce caused by suppressing a short circuit. Excessive active clamp circuit, but when the voltage Vce reaches the rated clamp voltage, it will also inject current into the gate of the IGBT, causing a change in the drive current, and thereby determining the short circuit of the IGBT module.
  • the IGBT short-circuit protection circuit P includes a driving current detecting unit 1, a comparing unit 2, and a protection unit 3.
  • the drive current detecting unit 1 is for detecting a drive current flowing through the IGBT, specifically, a drive current flowing through a gate of the IGBT.
  • the comparing unit 2 is configured to compare the driving current with a reference current and output a comparison result.
  • the protection unit 3 is configured to determine whether to initiate short-circuit protection to the IGBT according to the comparison result, for example, controlling the driver self-locking of the IGBT to turn off the IGBT.
  • the self-locking of the IGBT driving circuit is controlled by detecting the driving current flowing through the IGBT to achieve short-circuit protection of the IGBT.
  • the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the strong electric terminal of the IGBT is solved, and the short-circuit protection is
  • the sampling point does not set the strong end of the IGBT, thus avoiding the situation that the driver is strong and weakly mixed, and the safety hazard to the controller is eliminated.
  • the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.
  • the drive current detecting unit 1 is for detecting a drive current flowing through the IGBT, specifically, a drive current flowing through a gate of the IGBT.
  • the drive current detecting unit is, for example, an element capable of realizing current detection such as an ammeter.
  • the comparing unit 2 is configured to compare the driving current with a reference current and output a comparison result.
  • the comparison unit 2 includes a reference current supply unit 21 and a comparator 22.
  • the reference current supply unit 21 is configured to provide the reference current
  • the comparator 21 is configured to compare the drive current and the reference current, and input Compare results.
  • the reference current supply unit 21 is a memory or a register as a storage unit for storing the reference current and supplying it to the comparator 22.
  • the reference current may be an empirical value set according to a driving current under normal operation of the IGBT, for example, a maximum value of a driving current under normal operation of the IGBT, or a normal operation of several seconds after the driver is started, the acquisition driving The current is calculated as the maximum value, or the calculated maximum value is added with a redundant amount, and the like. If the comparison result output by the comparison unit 2 indicates that the detected drive current exceeds the reference current, the protection unit 3 initiates short-circuit protection, for example, causing the driver to self-lock to turn off the IGBT.
  • the reference current may also be the last driving current when the driver stored in the reference current supply unit 21 is normally operated. Specifically, when the driver is in normal operation, the value of the driving current is sampled and saved, and the value of the detected driving current and the sampled and saved driving current when the IGBT is next turned on, that is, the upper The primary drive current is compared and the result of the comparison is output. If the comparison result indicates that the detected driving current exceeds the predetermined range of the previous driving current, the predetermined range is, for example, a redundancy amount, that is, the detected driving current has a larger increase than the previous driving current.
  • the protection unit 3 starts short-circuit protection, for example, the driver is self-locked to turn off the IGBT. If the comparison result indicates that the detected driving current exceeds the value of the last driving current within a predetermined range, it indicates that the IGBT does not have an abnormality, the protection unit 3 does not start the short circuit protection, and the reference current supply unit 21 stores the corresponding Drive current for the next comparison.
  • the protection unit 3 is configured to determine whether to initiate short circuit protection of the IGBT according to the comparison result. Specifically, if the comparison result indicates that the IGBT has an abnormality, for example, the detected driving current exceeds the predetermined range of the previous driving current, the protection unit 3 initiates short-circuit protection to the IGBT, for example, the control driver performs self-locking, thereby turning off the IGBT. . Otherwise, short circuit protection is not activated.
  • the present invention provides an IGBT driver.
  • the IGBT driver includes a driving unit and the IGBT short circuit protection circuit.
  • the drive unit of the IGBT driver is, for example, a push-pull push stage connected to the gate of the IGBT.
  • the IGBT circuit includes an IGBT and the above IGBT driver.
  • the IGBT short circuit protection circuit of the IGBT driver The driving current detecting unit 1 is disposed between the driving unit and the gate resistance of the IGBT.
  • the IGBT circuit includes an IGBT and the IGBT driver.
  • the IGBT driver includes a driving unit 4 and the IGBT short circuit protection circuit P.
  • the IGBT short circuit protection circuit P includes a driving current detecting unit 1, a comparing unit 2 (including a reference current supply unit 21, a comparator 22), and a protection unit 3.
  • the driving current detecting unit 1 is configured to detect a driving current supplied from the driving unit 4, and the comparator 22 compares the detected driving current with a reference current supplied from the reference current supply unit 21, and outputs a comparison result.
  • the protection unit 3 activates the short circuit protection according to the comparison result, and performs self-locking of the IGBT driving circuit, for example, shielding the PMW pulse and setting a low level to turn off the IGBT.
  • the IGBT circuit includes a gate resistance Rg, and the current detecting unit 1 is disposed between the driving unit 4 and the gate resistor Rg for detecting a driving current flowing through a gate of the IGBT.
  • the method includes a driving current detecting step S1, a comparing step S2, and a protecting step S3.
  • the drive current detecting step S1 detects a drive current flowing through the IGBT, specifically, a drive current flowing through the gate of the IGBT.
  • the comparing step S2 compares the driving current with a reference current and outputs a comparison result.
  • the protecting step S3 determines whether to initiate short-circuit protection to the IGBT according to the comparison result, for example, controlling the driver of the IGBT to self-lock to turn off the IGBT.
  • the comparing step S2 in a preferred embodiment, comprises a reference current providing step and a comparing sub-step.
  • the reference current supply step stores and supplies the reference current using, for example, a memory or a register as a memory unit.
  • the comparing substep compares the driving current with the reference current and outputs a comparison result.
  • the reference current may be an empirical value set according to a driving current under normal operation of the IGBT, for example, a maximum value of a driving current under normal operation of the IGBT, or normal after the driver is started. Work for a few seconds, collect the drive current and calculate the maximum value, or the calculated maximum value and then add a redundant amount of values. If the comparison result outputted in the comparison step S2 indicates that the detected drive current exceeds the reference current, then in the protection step S3, short-circuit protection is initiated, for example, causing the driver to self-lock to turn off the IGBT.
  • the reference current may also be the last drive current when the saved driver is in normal operation. Specifically, when the driver is in normal operation, the value of the driving current is sampled and saved, and the value of the detected driving current and the sampled and saved driving current when the IGBT is next turned on, that is, the upper The primary drive current is compared and the result of the comparison is output. If the comparison result indicates that the detected driving current exceeds the predetermined range of the previous driving current, the predetermined range is, for example, a redundancy amount, that is, the detected driving current has a larger increase than the previous driving current. If the IGBT is abnormal, then at step S3, the short-circuit protection is started, for example, the driver is self-locked to turn off the IGBT.
  • the comparison result indicates that the detected driving current exceeds the value of the last driving current within a predetermined range, it indicates that the IGBT does not have an abnormality, then in the protection step S3, the short-circuit protection is not activated, and the reference current supply step is stored. The corresponding drive current is used for the next comparison.
  • FIG. 4 is a block flow diagram showing a specific embodiment of a short circuit protection method in accordance with the present invention.
  • the IGBT driver operates while the short circuit protection circuit is in operation.
  • the first normal drive current signal is stored, and the subsequent drive current, that is, the detected drive current, is further sampled. Further, the detected driving current is compared with the previously stored driving current, and it is determined whether the driving current is abrupt or abnormal. If abnormal, the switching switch is turned on to block the PWM pulse, thereby starting IGBT short-circuit protection.
  • the IGBT short circuit protection circuit and method, IGBT driver, and IGBT circuit of the present invention have been described above.
  • the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the IGBT strong electric terminal is solved, and the sampling due to the short-circuit protection is solved.
  • the point does not set the strong end of the IGBT, thus avoiding the situation that the driver is strong and weakly mixed, eliminating the safety hazard to the controller.
  • the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.

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Abstract

Disclosed are an IGBT short-circuit protection circuit (P) and method, an IGBT driver and an IGBT circuit. The IGBT short-circuit protection circuit (P) comprises: a driving current detection unit (1) used for detecting a driving current flowing through an IGBT gate; a comparison unit (2) used for comparing the driving current with a reference current and outputting a comparison result; and a protection unit (3) used for determining whether to start short-circuit protection for an IGBT according to the comparison result. By detecting the driving current flowing through the IGBT, the self-locking of an IGBT driving circuit is controlled so as to improve the reliability of the short-circuit protection for the IGBT.

Description

IGBT短路保护电路及方法、IGBT驱动器以及IGBT电路IGBT short circuit protection circuit and method, IGBT driver and IGBT circuit 技术领域Technical field
本发明涉及电路技术领域,尤其涉及一种IGBT短路保护电路及方法,IGBT驱动器以及IGBT电路。The present invention relates to the field of circuit technologies, and in particular, to an IGBT short circuit protection circuit and method, an IGBT driver and an IGBT circuit.
背景技术Background technique
IGBT(Insulated Gate Bipolar Transistor,绝缘栅双极型晶体管)由MOSFET和双极型晶体管复合而成,其融和了这两种器件的优点,既具有MOSFET器件驱动简单和快速的优点,又具有双极型器件容量大的优点,因而,在当前电力电子技术中得到了越来越广泛的应用。然而,IGBT的驱动器的各种保护功能是否可行、完善,能否在异常情况下及时关闭IGBT,在一定程度上决定了IGBT使用的寿命。IGBT (Insulated Gate Bipolar Transistor) is a combination of MOSFET and bipolar transistor, which combines the advantages of these two devices. It has the advantages of simple and fast driving of MOSFET devices and bipolar. The advantages of large device capacity are thus more and more widely used in current power electronics technology. However, whether the various protection functions of the IGBT driver are feasible and perfect, whether the IGBT can be turned off in an abnormal situation in a timely manner determines the life of the IGBT to a certain extent.
常规IGBT驱动器的短路保护通过对开通时的IGBT的集电极CE端进行电压检测,即检测栅极电压Vce(sat)。正常工作时,Vce(sat)值约2V左右,达不到短路保护阈值。当发生短路时,由于流过集电极的电流(即Ic)快速变化,造成Vce(sat)上升,直至达到短路保护阈值。通过IGBT驱动器的信号处理电路实施自锁保护。The short-circuit protection of the conventional IGBT driver detects the gate voltage Vce(sat) by detecting the voltage at the collector CE terminal of the IGBT at the time of turn-on. During normal operation, the Vce(sat) value is about 2V, which does not reach the short-circuit protection threshold. When a short circuit occurs, the current flowing through the collector (ie, Ic) changes rapidly, causing Vce(sat) to rise until the short-circuit protection threshold is reached. Self-locking protection is implemented by the signal processing circuit of the IGBT driver.
但这种方法中,由于在工作电流大于2倍额定电流时,IGBT的外特性曲线为定性不定量的,所以可能会存在某些异常情况导致短路电流极大时还未达到短路保护阈值,保护不动作,即短路保护失效,从而损坏IGBT。进一步地,当短路回路电感量过大时,电流变化率就变的很低,此时不是短路,而是过流,这种情况短路保护也将失去作用。 However, in this method, since the external characteristic curve of the IGBT is qualitative and not quantitative when the operating current is greater than 2 times of the rated current, there may be some abnormal conditions that cause the short-circuit current to be extremely large and the short-circuit protection threshold has not been reached. No action, that is, the short circuit protection fails, thereby damaging the IGBT. Further, when the short circuit inductance is too large, the current change rate becomes very low. At this time, it is not a short circuit but an overcurrent, and in this case, the short circuit protection will also be lost.
发明内容Summary of the invention
有鉴于此,本发明提供一种IGBT短路保护电路及方法、IGBT驱动器以及IGBT电路,能够更可靠地实现对IGBT的短路保护。In view of the above, the present invention provides an IGBT short circuit protection circuit and method, an IGBT driver, and an IGBT circuit, which can more reliably achieve short circuit protection for an IGBT.
根据本发明的第一方面,提供一种IGBT短路保护电路,包括:驱动电流检测单元,用于检测流经IGBT栅极的驱动电流;比较单元,用于将该驱动电流与一参考电流进行比较,并输出比较结果;以及保护单元,用于根据所述比较结果确定是否启动对IGBT的短路保护。According to a first aspect of the present invention, an IGBT short circuit protection circuit is provided, comprising: a driving current detecting unit for detecting a driving current flowing through an IGBT gate; and a comparing unit for comparing the driving current with a reference current And outputting a comparison result; and a protection unit configured to determine whether to initiate short-circuit protection to the IGBT according to the comparison result.
进一步地,所述比较单元包括参考电流提供单元和比较器;所述参考电流提供单元用于提供所述参考电流,所述比较器用于将所述驱动电流和所述参考电流进行比较,并输出比较结果。Further, the comparison unit includes a reference current supply unit for supplying the reference current, and a comparator for comparing the drive current and the reference current, and outputting Comparing results.
进一步地,所述参考电流提供单元为一存储单元,用于存储所述参考电流,提供给所述比较器。Further, the reference current supply unit is a storage unit for storing the reference current and providing the comparator.
进一步地,所述参考电流为根据IGBT正常工作下的驱动电流的最大值或IGBT驱动器正常工作时的上一次驱动电流。Further, the reference current is a maximum value of the driving current according to the normal operation of the IGBT or a previous driving current when the IGBT driver is normally operated.
进一步地,当所述参考电流为根据IGBT正常工作下的驱动电流的最大值时,若比较单元输出的所述比较结果表明检测到的所述驱动电流超过所述参考电流,则所述保护单元启动短路保护;Further, when the reference current is a maximum value of the driving current according to the normal operation of the IGBT, if the comparison result output by the comparison unit indicates that the detected driving current exceeds the reference current, the protection unit Start short circuit protection;
当所述参考电流为IGBT驱动器正常工作时的上一次驱动电流时,若比较结果表明检测到的所述驱动电流超过所述上一次驱动电流预定范围,则所述保护单元启动短路保护。When the reference current is the last driving current when the IGBT driver is normally operated, if the comparison result indicates that the detected driving current exceeds the predetermined range of the last driving current, the protection unit starts short-circuit protection.
进一步地,所述保护单元包括切换开关,当保护单元根据所述比较结果确定启动IGBT短路保护时,通过断开所述切换开关而关闭PWM脉冲,从而关闭IGBT。Further, the protection unit includes a switch, and when the protection unit determines to start the IGBT short-circuit protection according to the comparison result, the PWM pulse is turned off by turning off the switch, thereby turning off the IGBT.
根据本发明的第二方面,提供一种IGBT驱动器,包括:驱动单元;以 及上述任一项所述IGBT短路保护电路。According to a second aspect of the present invention, an IGBT driver is provided, comprising: a driving unit; And the IGBT short circuit protection circuit according to any one of the above.
进一步地,所述驱动单元为与IGBT的栅极连接的推挽式推动级。Further, the driving unit is a push-pull pushing stage connected to the gate of the IGBT.
根据本发明的第三方面,提供一种IGBT电路,包括:IGBT;以及上述任一项所述的IGBT驱动器。According to a third aspect of the invention, there is provided an IGBT circuit comprising: an IGBT; and the IGBT driver according to any of the above.
进一步地,所述的IGBT电路,还包括IGBT栅极电阻;其中,所述驱动电流检测单元设置在所述驱动单元及所述IGBT栅极电阻之间。Further, the IGBT circuit further includes an IGBT gate resistor; wherein the driving current detecting unit is disposed between the driving unit and the IGBT gate resistor.
根据本发明的第四方面,提供一种IGBT短路保护方法,包括:驱动电流检测步骤,检测流经IGBT的栅极的驱动电流;比较步骤,将该驱动电流与一参考电流进行比较,并输出比较结果;以及保护步骤,根据所述比较结果确定是否启动对IGBT的短路保护。According to a fourth aspect of the present invention, a method for protecting an IGBT short circuit includes: a driving current detecting step of detecting a driving current flowing through a gate of the IGBT; a comparing step of comparing the driving current with a reference current, and outputting Comparing the result; and a protection step of determining whether to initiate short circuit protection to the IGBT based on the comparison result.
进一步地,所述比较步骤包括参考电流提供步骤和比较子步骤;所述参考电流提供步骤,提供所述参考电流;所述比较子步骤,将所述驱动电流和所述参考电流进行比较,并输出比较结果。Further, the comparing step includes a reference current providing step and a comparing sub-step; the reference current providing step providing the reference current; the comparing sub-step comparing the driving current and the reference current, and Output the comparison result.
进一步地,在驱动器正常运行时,采样并保存所述驱动电流的值,在IGBT下一次开通时将检测到的驱动电流与所述采样并保存的所述驱动电流的值,即所述的上一次驱动电流进行比较,并输出比较的结果。Further, when the driver is in normal operation, the value of the driving current is sampled and saved, and the detected driving current is compared with the value of the sampled and saved driving current when the IGBT is next turned on, that is, the upper The primary drive current is compared and the result of the comparison is output.
进一步地,若比较结果表明检测到的所述驱动电流超过所述上一次驱动电流预定范围,则表明IGBT出现异常,则此时保护单元步骤中,启动短路保护。Further, if the comparison result indicates that the detected driving current exceeds the predetermined range of the previous driving current, it indicates that the IGBT is abnormal, and in this step, the short circuit protection is started in the protection unit step.
根据本发明的上述方案,通过检测流经IGBT的驱动电流来控制IGBT驱动电路的自锁,以实现对IGBT的短路保护。这样,通过检测流经IGBT栅极的驱动电流,解决了现有技术中对大功率IGBT模块短路保护只能通过检测IGBT强电端集电极的电流而导致的方案单一的问题,并且由于短路保护的采样点不设置IGBT的强电端,从而避免了驱动器强、弱电混合的情 况,消除了对控制器存在的安全隐患。进一步地,在短路保护失效或过流非短路状态时,IGBT短路保护的可靠性不会受到影响,即提高了短路保护的可靠性。According to the above aspect of the invention, the self-locking of the IGBT driving circuit is controlled by detecting the driving current flowing through the IGBT to achieve short-circuit protection of the IGBT. In this way, by detecting the driving current flowing through the gate of the IGBT, the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the strong electric terminal of the IGBT is solved, and the short-circuit protection is The sampling point does not set the strong end of the IGBT, thus avoiding the strong and weak electric mixing of the driver. In this case, the security risks to the controller are eliminated. Further, in the case of a short-circuit protection failure or an overcurrent non-short-circuit state, the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.
以下结合附图及具体实施方式对本发明的技术方案做进一步详细的描述,本发明的有益效果将进一步明确。The technical solutions of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments, and the advantages of the present invention will be further clarified.
附图说明DRAWINGS
此处所说明的附图用来提供对本发明的进一步理解,构成本发明的一部分,用于解释本发明,并不构成对本发明的不当限定。The drawings described herein are provided to provide a further understanding of the invention, and are in no way of limiting the invention.
图1示出了根据本发明一优选实施IGBT短路保护电路的结构框图。1 is a block diagram showing the structure of an IGBT short circuit protection circuit in accordance with a preferred embodiment of the present invention.
图2为根据本发明一优选实施例的IGBT电路的结构示意图。2 is a block diagram showing the structure of an IGBT circuit in accordance with a preferred embodiment of the present invention.
图3为根据本发明一优选实施的IGBT短路保护方法的流程图。3 is a flow chart of a IGBT short circuit protection method in accordance with a preferred embodiment of the present invention.
图4为根据本发明所述的短路保护方法的一具体实施例的流程框图。4 is a block flow diagram of a specific embodiment of a short circuit protection method in accordance with the present invention.
具体实施方式detailed description
为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明具体实施例及相应的附图对本发明技术方案进行清楚、完整地描述。显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions of the present invention will be clearly and completely described in conjunction with the specific embodiments of the present invention and the accompanying drawings. It is apparent that the described embodiments are only a part of the embodiments of the invention, and not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
在对本发明的电路结构进行说明之前,首先解释一下本发明的工作原理。若IGBT发生短路故障,在IGBT的集电极电流Ic上升的过程中,栅极电压Vge也在上升,这是由米勒效应引起的。而在短路时栅极电压Vge的变化,导致栅极电荷量Qg也会相应的发生变化,并进而所需的驱动电流也会发生变化。此时,通过判断驱动电流的异常增大或波动即可判断IGBT模块的短路。并且,有的驱动器虽然设置了抑制短路时引起的集电极电压Vce 过大的有源钳位电路,但在该电压Vce达到额定钳位电压时,也会向IGBT的栅极注入电流,从而引起驱动电流的变化,据此也可判断IGBT模块的短路。Before explaining the circuit structure of the present invention, the working principle of the present invention will first be explained. If the IGBT has a short-circuit fault, the gate voltage Vge also rises during the rise of the collector current Ic of the IGBT, which is caused by the Miller effect. The change in the gate voltage Vge during the short circuit causes the gate charge amount Qg to change accordingly, and the required drive current also changes. At this time, the short circuit of the IGBT module can be judged by judging the abnormal increase or fluctuation of the drive current. Moreover, some drivers are provided with a collector voltage Vce caused by suppressing a short circuit. Excessive active clamp circuit, but when the voltage Vce reaches the rated clamp voltage, it will also inject current into the gate of the IGBT, causing a change in the drive current, and thereby determining the short circuit of the IGBT module.
基于以上原理,提出本发明的方案,以下将进行详细说明。Based on the above principles, the solution of the present invention has been proposed, which will be described in detail below.
首先结合图1说明本发明的IGBT短路保护电路的构成。图1示出了根据本发明所述IGBT短路保护电路的结构框图,如图1所示,所述IGBT短路保护电路P包括:驱动电流检测单元1、比较单元2以及保护单元3。所述驱动电流检测单元1用于检测流经IGBT的驱动电流,具体地,检测流经IGBT的栅极的驱动电流。所述比较单元2用于将该驱动电流与一参考电流进行比较,并输出比较结果。所述保护单元3用于根据所述比较结果确定是否启动对IGBT的短路保护,例如控制IGBT的驱动器自锁,以关闭IGBT。First, the configuration of the IGBT short-circuit protection circuit of the present invention will be described with reference to FIG. 1 is a block diagram showing the structure of an IGBT short circuit protection circuit according to the present invention. As shown in FIG. 1, the IGBT short circuit protection circuit P includes a driving current detecting unit 1, a comparing unit 2, and a protection unit 3. The drive current detecting unit 1 is for detecting a drive current flowing through the IGBT, specifically, a drive current flowing through a gate of the IGBT. The comparing unit 2 is configured to compare the driving current with a reference current and output a comparison result. The protection unit 3 is configured to determine whether to initiate short-circuit protection to the IGBT according to the comparison result, for example, controlling the driver self-locking of the IGBT to turn off the IGBT.
根据本发明的上述方案,通过检测流经IGBT的驱动电流来控制IGBT驱动电路的自锁,以实现对IGBT的短路保护。这样,通过检测流经IGBT栅极的驱动电流,解决了现有技术中对大功率IGBT模块短路保护只能通过检测IGBT强电端集电极的电流而导致的方案单一的问题,并且由于短路保护的采样点不设置IGBT的强电端,从而避免了驱动器强、弱电混合的情况,消除了对控制器存在安全隐患。进一步地,在短路保护失效或过流非短路状态时,IGBT短路保护的可靠性不会受到影响,即提高了短路保护的可靠性。According to the above aspect of the invention, the self-locking of the IGBT driving circuit is controlled by detecting the driving current flowing through the IGBT to achieve short-circuit protection of the IGBT. In this way, by detecting the driving current flowing through the gate of the IGBT, the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the strong electric terminal of the IGBT is solved, and the short-circuit protection is The sampling point does not set the strong end of the IGBT, thus avoiding the situation that the driver is strong and weakly mixed, and the safety hazard to the controller is eliminated. Further, in the case of a short-circuit protection failure or an overcurrent non-short-circuit state, the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.
以下对所述保护电路的各组成部分逐一进行说明。Hereinafter, each component of the protection circuit will be described one by one.
所述驱动电流检测单元1用于检测流经IGBT的驱动电流,具体地,检测流经IGBT的栅极的驱动电流。该驱动电流检测单元例如为安培计等能够实现电流检测的元件。The drive current detecting unit 1 is for detecting a drive current flowing through the IGBT, specifically, a drive current flowing through a gate of the IGBT. The drive current detecting unit is, for example, an element capable of realizing current detection such as an ammeter.
所述比较单元2用于将所述驱动电流与一参考电流进行比较,并输出比较结果。在一优选实施例中,如图1所示,所述比较单元2包括参考电流提供单元21和比较器22。所述参考电流提供单元21用于提供所述参考电流,所述比较器21用于将所述驱动电流和所述参考电流进行比较,并输 出比较结果。在一个具体实施例中,所述参考电流提供单元21为一作为存储单元的存储器或寄存器,用于存储所述参考电流,并提供给比较器22。The comparing unit 2 is configured to compare the driving current with a reference current and output a comparison result. In a preferred embodiment, as shown in FIG. 1, the comparison unit 2 includes a reference current supply unit 21 and a comparator 22. The reference current supply unit 21 is configured to provide the reference current, and the comparator 21 is configured to compare the drive current and the reference current, and input Compare results. In a specific embodiment, the reference current supply unit 21 is a memory or a register as a storage unit for storing the reference current and supplying it to the comparator 22.
在一个实施例中,所述参考电流可以为根据IGBT正常工作下的驱动电流而设置的经验值,例如为IGBT正常工作下的驱动电流的最大值,或者在驱动器启动后正常工作数秒,采集驱动电流并运算出的最大值,又或者是该运算出的最大值再添加一个冗余量所得的值等。若比较单元2输出的所述比较结果表明检测到的所述驱动电流超过所述参考电流,则保护单元3启动短路保护,例如使得驱动器进行自锁,以关闭IGBT。In one embodiment, the reference current may be an empirical value set according to a driving current under normal operation of the IGBT, for example, a maximum value of a driving current under normal operation of the IGBT, or a normal operation of several seconds after the driver is started, the acquisition driving The current is calculated as the maximum value, or the calculated maximum value is added with a redundant amount, and the like. If the comparison result output by the comparison unit 2 indicates that the detected drive current exceeds the reference current, the protection unit 3 initiates short-circuit protection, for example, causing the driver to self-lock to turn off the IGBT.
在另一个实施例中,所述参考电流也可以是保存在上述参考电流提供单元21中的驱动器正常工作时的上一次驱动电流。具体地,在驱动器正常运行时,采样并保存所述驱动电流的值,在IGBT下一次开通时将检测到的驱动电流与所述采样并保存的所述驱动电流的值,即所述的上一次驱动电流进行比较,并输出比较的结果。若比较结果表明检测到的所述驱动电流超过所述上一次驱动电流预定范围,该预定范围,例如为一冗余量,即检测到的所述驱动电流相比上一次驱动电流有较大增加,则表明IGBT出现异常,则此时保护单元3启动短路保护,例如使得驱动器进行自锁,以关闭IGBT。若比较结果表明检测到的所述驱动电流超过所述上一次驱动电流的值在预定范围内,则表明IGBT未出现异常,则保护单元3不启动短路保护,同时参考电流提供单元21存储相应的驱动电流,以用于下一次的比较。In another embodiment, the reference current may also be the last driving current when the driver stored in the reference current supply unit 21 is normally operated. Specifically, when the driver is in normal operation, the value of the driving current is sampled and saved, and the value of the detected driving current and the sampled and saved driving current when the IGBT is next turned on, that is, the upper The primary drive current is compared and the result of the comparison is output. If the comparison result indicates that the detected driving current exceeds the predetermined range of the previous driving current, the predetermined range is, for example, a redundancy amount, that is, the detected driving current has a larger increase than the previous driving current. , indicating that the IGBT is abnormal, then the protection unit 3 starts short-circuit protection, for example, the driver is self-locked to turn off the IGBT. If the comparison result indicates that the detected driving current exceeds the value of the last driving current within a predetermined range, it indicates that the IGBT does not have an abnormality, the protection unit 3 does not start the short circuit protection, and the reference current supply unit 21 stores the corresponding Drive current for the next comparison.
所述保护单元3用于根据所述比较结果确定是否启动对IGBT的短路保护。具体地,若比较结果表明IGBT出现异常,例如检测到的所述驱动电流超过所述上一次驱动电流预定范围,则保护单元3启动对IGBT的短路保护,例如控制驱动器进行自锁,从而关闭IGBT。否则,不启动短路保护。The protection unit 3 is configured to determine whether to initiate short circuit protection of the IGBT according to the comparison result. Specifically, if the comparison result indicates that the IGBT has an abnormality, for example, the detected driving current exceeds the predetermined range of the previous driving current, the protection unit 3 initiates short-circuit protection to the IGBT, for example, the control driver performs self-locking, thereby turning off the IGBT. . Otherwise, short circuit protection is not activated.
进一步地,本发明提供一种IGBT驱动器。该IGBT驱动器包括驱动单元及上述IGBT短路保护电路。所述IGBT驱动器的驱动单元例如为与IGBT的栅极连接的推挽式推动级。Further, the present invention provides an IGBT driver. The IGBT driver includes a driving unit and the IGBT short circuit protection circuit. The drive unit of the IGBT driver is, for example, a push-pull push stage connected to the gate of the IGBT.
并且进一步地,描述根据本发明的IGBT电路。该IGBT电路包括:IGBT以及上述IGBT驱动器。其中,所述IGBT驱动器的所述IGBT短路保护电路 中的驱动电流检测单元1设置在驱动单元及IGBT的栅极电阻之间。And further, an IGBT circuit according to the present invention will be described. The IGBT circuit includes an IGBT and the above IGBT driver. Wherein the IGBT short circuit protection circuit of the IGBT driver The driving current detecting unit 1 is disposed between the driving unit and the gate resistance of the IGBT.
下面结合图2示出的一个具体实施例来描述根据本发明的IGBT电路。如图2所示,所述IGBT电路包括IGBT、以及所述的IGBT驱动器。该IGBT驱动器包括驱动单元4以及所述的IGBT短路保护电路P。而所述的IGBT短路保护电路P则包括驱动电流检测单元1、比较单元2(包括参考电流提供单元21、比较器22)以及保护单元3。所述驱动电流检测单元1用于检测驱动单元4所提供的驱动电流,比较器22比较该检测的驱动电流与参考电流提供单元21提供的参考电流,输出比较结果。保护单元3根据所述比较结果启动短路保护,进行IGBT驱动电路的自锁,例如屏蔽所述PMW脉冲,并置低电平,从而关闭所述IGBT。进一步地,所述IGBT电路包括栅极电阻Rg,电流检测单元1设置在驱动单元4与该栅极电阻Rg之间,用于检测流过IGBT的栅极的驱动电流。The IGBT circuit according to the present invention will be described below in conjunction with a specific embodiment shown in FIG. As shown in FIG. 2, the IGBT circuit includes an IGBT and the IGBT driver. The IGBT driver includes a driving unit 4 and the IGBT short circuit protection circuit P. The IGBT short circuit protection circuit P includes a driving current detecting unit 1, a comparing unit 2 (including a reference current supply unit 21, a comparator 22), and a protection unit 3. The driving current detecting unit 1 is configured to detect a driving current supplied from the driving unit 4, and the comparator 22 compares the detected driving current with a reference current supplied from the reference current supply unit 21, and outputs a comparison result. The protection unit 3 activates the short circuit protection according to the comparison result, and performs self-locking of the IGBT driving circuit, for example, shielding the PMW pulse and setting a low level to turn off the IGBT. Further, the IGBT circuit includes a gate resistance Rg, and the current detecting unit 1 is disposed between the driving unit 4 and the gate resistor Rg for detecting a driving current flowing through a gate of the IGBT.
下面结合图3描述根据本发明的IGBT短路保护方法,如图3所示,所述方法包括:驱动电流检测步骤S1、比较步骤S2以及保护步骤S3。所述驱动电流检测步骤S1,检测流经IGBT的驱动电流,具体地,检测流经IGBT的栅极的驱动电流。所述比较步骤S2,将该驱动电流与一参考电流进行比较,并输出比较结果。所述保护步骤S3,根据所述比较结果确定是否启动对IGBT的短路保护,例如控制IGBT的驱动器自锁,以关闭IGBT。The IGBT short circuit protection method according to the present invention will be described below with reference to FIG. 3. As shown in FIG. 3, the method includes a driving current detecting step S1, a comparing step S2, and a protecting step S3. The drive current detecting step S1 detects a drive current flowing through the IGBT, specifically, a drive current flowing through the gate of the IGBT. The comparing step S2 compares the driving current with a reference current and outputs a comparison result. The protecting step S3 determines whether to initiate short-circuit protection to the IGBT according to the comparison result, for example, controlling the driver of the IGBT to self-lock to turn off the IGBT.
所述比较步骤S2在一优选实施例中,包括参考电流提供步骤和比较子步骤。所述参考电流提供步骤,利用例如一作为存储单元的存储器或寄存器存储并提供所述参考电流。所述比较子步骤,将所述驱动电流和所述参考电流进行比较,并输出比较结果。The comparing step S2, in a preferred embodiment, comprises a reference current providing step and a comparing sub-step. The reference current supply step stores and supplies the reference current using, for example, a memory or a register as a memory unit. The comparing substep compares the driving current with the reference current and outputs a comparison result.
如上文所述,在一个实施例中,所述参考电流可以为根据IGBT正常工作下的驱动电流而设置的经验值,例如为IGBT正常工作下的驱动电流的最大值,或者在驱动器启动后正常工作数秒,采集驱动电流并运算出的最大值,又或者是该运算出的最大值再添加一个冗余量所得的值等。若比较步骤S2输出的所述比较结果表明检测到的所述驱动电流超过所述参考电流,则保护步骤S3中,启动短路保护,例如使得驱动器进行自锁,以关闭IGBT。 As described above, in one embodiment, the reference current may be an empirical value set according to a driving current under normal operation of the IGBT, for example, a maximum value of a driving current under normal operation of the IGBT, or normal after the driver is started. Work for a few seconds, collect the drive current and calculate the maximum value, or the calculated maximum value and then add a redundant amount of values. If the comparison result outputted in the comparison step S2 indicates that the detected drive current exceeds the reference current, then in the protection step S3, short-circuit protection is initiated, for example, causing the driver to self-lock to turn off the IGBT.
在另一个实施例中,所述参考电流也可以是保存的驱动器正常工作时的上一次驱动电流。具体地,在驱动器正常运行时,采样并保存所述驱动电流的值,在IGBT下一次开通时将检测到的驱动电流与所述采样并保存的所述驱动电流的值,即所述的上一次驱动电流进行比较,并输出比较的结果。若比较结果表明检测到的所述驱动电流超过所述上一次驱动电流预定范围,该预定范围,例如为一冗余量,即检测到的所述驱动电流相比上一次驱动电流有较大增加,则表明IGBT出现异常,则此时保护步骤S3,启动短路保护,例如使得驱动器进行自锁,以关闭IGBT。若比较结果表明检测到的所述驱动电流超过所述上一次驱动电流的值在预定范围内,则表明IGBT未出现异常,则保护步骤S3中,不启动短路保护,同时参考电流提供步骤中存储相应的驱动电流,以用于下一次的比较。In another embodiment, the reference current may also be the last drive current when the saved driver is in normal operation. Specifically, when the driver is in normal operation, the value of the driving current is sampled and saved, and the value of the detected driving current and the sampled and saved driving current when the IGBT is next turned on, that is, the upper The primary drive current is compared and the result of the comparison is output. If the comparison result indicates that the detected driving current exceeds the predetermined range of the previous driving current, the predetermined range is, for example, a redundancy amount, that is, the detected driving current has a larger increase than the previous driving current. If the IGBT is abnormal, then at step S3, the short-circuit protection is started, for example, the driver is self-locked to turn off the IGBT. If the comparison result indicates that the detected driving current exceeds the value of the last driving current within a predetermined range, it indicates that the IGBT does not have an abnormality, then in the protection step S3, the short-circuit protection is not activated, and the reference current supply step is stored. The corresponding drive current is used for the next comparison.
图4示出了根据本发明所述的短路保护方法的一具体实施例的流程框图。如图4所示,以图2所示的IGBT电路的工作过程为例对该所述短路保护方法的具体流程进行说明。IGBT驱动器运行,并同时所述短路保护电路进入工作状态。首先存储第一次正常驱动电流信号,并进一步采样此后的驱动电流,即检测的驱动电流。进一步地,将该检测的驱动电流与前一次存储的驱动电流进行比较,并判断驱动电流是否突变或异常,如果异常,则打开切换开关以封锁所述PWM脉冲,从而启动IGBT短路保护。4 is a block flow diagram showing a specific embodiment of a short circuit protection method in accordance with the present invention. As shown in FIG. 4, the specific process of the short circuit protection method will be described by taking the operation process of the IGBT circuit shown in FIG. 2 as an example. The IGBT driver operates while the short circuit protection circuit is in operation. First, the first normal drive current signal is stored, and the subsequent drive current, that is, the detected drive current, is further sampled. Further, the detected driving current is compared with the previously stored driving current, and it is determined whether the driving current is abrupt or abnormal. If abnormal, the switching switch is turned on to block the PWM pulse, thereby starting IGBT short-circuit protection.
以上对本发明的IGBT短路保护电路及方法、IGBT驱动器、以及IGBT电路进行了描述。通过检测流经IGBT栅极的驱动电流,解决了现有技术中对大功率IGBT模块短路保护只能通过检测IGBT强电端集电极的电流而导致的方案单一的问题,并且由于短路保护的采样点不设置IGBT的强电端,从而避免了驱动器强、弱电混合的情况,消除了对控制器存在安全隐患。进一步地,在短路保护失效或过流非短路状态时,IGBT短路保护的可靠性不会受到影响,即提高了短路保护的可靠性。The IGBT short circuit protection circuit and method, IGBT driver, and IGBT circuit of the present invention have been described above. By detecting the driving current flowing through the gate of the IGBT, the prior art problem that the short-circuit protection of the high-power IGBT module can only be detected by detecting the current of the collector of the IGBT strong electric terminal is solved, and the sampling due to the short-circuit protection is solved. The point does not set the strong end of the IGBT, thus avoiding the situation that the driver is strong and weakly mixed, eliminating the safety hazard to the controller. Further, in the case of a short-circuit protection failure or an overcurrent non-short-circuit state, the reliability of the IGBT short-circuit protection is not affected, that is, the reliability of the short-circuit protection is improved.
综上所述,本领域技术人员容易理解的是,在不冲突的前提下,上述各有利方式可以自由地组合、叠加。In summary, those skilled in the art will readily understand that the above advantageous modes can be freely combined and superimposed without conflict.
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式 上的限制,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。 The above is only a preferred embodiment of the present invention and is not intended to be in any form for the present invention. Any simple modifications, equivalent changes and modifications made to the above embodiments in accordance with the technical spirit of the present invention are still within the scope of the technical solutions of the present invention.

Claims (14)

  1. 一种IGBT短路保护电路,其特征在于,包括:An IGBT short circuit protection circuit, comprising:
    驱动电流检测单元,用于检测流经IGBT栅极的驱动电流;a driving current detecting unit for detecting a driving current flowing through the gate of the IGBT;
    比较单元,用于将该驱动电流与一参考电流进行比较,并输出比较结果;以及a comparison unit configured to compare the drive current with a reference current and output a comparison result;
    保护单元,用于根据所述比较结果确定是否启动对IGBT的短路保护。And a protection unit, configured to determine, according to the comparison result, whether to initiate short circuit protection to the IGBT.
  2. 如权利要求1所述的IGBT短路保护电路,其特征在于,The IGBT short circuit protection circuit according to claim 1, wherein
    所述比较单元包括参考电流提供单元和比较器;所述参考电流提供单元用于提供所述参考电流,所述比较器用于将所述驱动电流和所述参考电流进行比较,并输出比较结果。The comparison unit includes a reference current supply unit for supplying the reference current, and a comparator for comparing the drive current with the reference current and outputting a comparison result.
  3. 如权利要求2所述的IGBT短路保护电路,其特征在于,The IGBT short circuit protection circuit according to claim 2, wherein
    所述参考电流提供单元为一存储单元,用于存储所述参考电流,提供给所述比较器。The reference current supply unit is a storage unit for storing the reference current and providing the comparator.
  4. 如权利要求2或3所述的IGBT短路保护电路,其特征在于,The IGBT short circuit protection circuit according to claim 2 or 3, characterized in that
    所述参考电流为根据IGBT正常工作下的驱动电流的最大值或IGBT驱动器正常工作时的上一次驱动电流。The reference current is a maximum value of the driving current according to the normal operation of the IGBT or a previous driving current when the IGBT driver is normally operated.
  5. 如权利要求4所述的IGBT短路保护电路,其特征在于,The IGBT short circuit protection circuit according to claim 4, wherein
    当所述参考电流为根据IGBT正常工作下的驱动电流的最大值时,若比较单元输出的所述比较结果表明检测到的所述驱动电流超过所述参考电流,则所述保护单元启动短路保护;When the reference current is the maximum value of the driving current according to the normal operation of the IGBT, if the comparison result of the comparison unit output indicates that the detected driving current exceeds the reference current, the protection unit starts short-circuit protection. ;
    当所述参考电流为IGBT驱动器正常工作时的上一次驱动电流时,若比较结果表明检测到的所述驱动电流超过所述上一次驱动电流预定范围,则所述保护单元启动短路保护。 When the reference current is the last driving current when the IGBT driver is normally operated, if the comparison result indicates that the detected driving current exceeds the predetermined range of the last driving current, the protection unit starts short-circuit protection.
  6. 如权利要求1-5任一项所述的IGBT短路保护电路,其特征在于,The IGBT short circuit protection circuit according to any one of claims 1 to 5, characterized in that
    所述保护单元包括切换开关,当保护单元根据所述比较结果确定启动IGBT短路保护时,通过断开所述切换开关而关闭PWM脉冲,从而关闭IGBT。The protection unit includes a switching switch. When the protection unit determines to activate the IGBT short-circuit protection according to the comparison result, the PWM pulse is turned off by turning off the switching switch, thereby turning off the IGBT.
  7. 一种IGBT驱动器,其特征在于,包括:An IGBT driver, comprising:
    驱动单元;以及权利要求1-6任一项所述的IGBT短路保护电路。A driving unit; and the IGBT short circuit protection circuit according to any one of claims 1 to 6.
  8. 如权利要求7所述的IGBT驱动器,其特征在于,The IGBT driver of claim 7 wherein:
    所述驱动单元为与IGBT的栅极连接的推挽式推动级。The drive unit is a push-pull push stage connected to the gate of the IGBT.
  9. 一种IGBT电路,其特征在于,包括:An IGBT circuit, comprising:
    IGBT;以及IGBT; and
    如权利要求7或8所述的IGBT驱动器。The IGBT driver according to claim 7 or 8.
  10. 如权利要求9所述的IGBT电路,其特征在于,还包括IGBT栅极电阻;The IGBT circuit according to claim 9, further comprising an IGBT gate resistance;
    其中,所述驱动电流检测单元设置在所述驱动单元及所述IGBT栅极电阻之间。The driving current detecting unit is disposed between the driving unit and the IGBT gate resistor.
  11. 一种IGBT短路保护方法,其特征在于,包括:An IGBT short circuit protection method, comprising:
    驱动电流检测步骤,检测流经IGBT的栅极的驱动电流;Driving a current detecting step to detect a driving current flowing through a gate of the IGBT;
    比较步骤,将该驱动电流与一参考电流进行比较,并输出比较结果;以及a comparison step of comparing the drive current with a reference current and outputting a comparison result;
    保护步骤,根据所述比较结果确定是否启动对IGBT的短路保护。And a protection step of determining whether to initiate short circuit protection of the IGBT according to the comparison result.
  12. 如权利要求11所述的方法,其特征在于,The method of claim 11 wherein:
    所述比较步骤包括参考电流提供步骤和比较子步骤;所述参考电流提供步骤,提供所述参考电流;所述比较子步骤,将所述驱动电流和所述参考电流进行比较,并输出比较结果。 The comparing step includes a reference current providing step and a comparing sub-step; the reference current providing step providing the reference current; the comparing sub-step, comparing the driving current with the reference current, and outputting a comparison result .
  13. 如权利要求11或12所述的方法,其特征在于,A method according to claim 11 or 12, wherein
    在驱动器正常运行时,采样并保存所述驱动电流的值,在IGBT下一次开通时将检测到的驱动电流与所述采样并保存的所述驱动电流的值,即所述的上一次驱动电流进行比较,并输出比较的结果。While the driver is in normal operation, the value of the driving current is sampled and saved, and the detected driving current and the value of the sampled and saved driving current when the IGBT is next turned on, that is, the last driving current Compare and output the result of the comparison.
  14. 如权利要求13所述的方法,其特征在于,The method of claim 13 wherein:
    若比较结果表明检测到的所述驱动电流超过所述上一次驱动电流预定范围,则表明IGBT出现异常,则此时保护单元步骤中,启动短路保护。 If the comparison result indicates that the detected driving current exceeds the predetermined range of the previous driving current, it indicates that the IGBT is abnormal, and then the short circuit protection is started in the protection unit step.
PCT/CN2017/080694 2016-06-17 2017-04-17 Igbt short-circuit protection circuit and method, igbt driver and igbt circuit WO2017215335A1 (en)

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