WO2016010003A1 - 樹脂前駆体及びそれを含有する樹脂組成物、ポリイミド樹脂膜、樹脂フィルム及びその製造方法 - Google Patents
樹脂前駆体及びそれを含有する樹脂組成物、ポリイミド樹脂膜、樹脂フィルム及びその製造方法 Download PDFInfo
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- WO2016010003A1 WO2016010003A1 PCT/JP2015/070073 JP2015070073W WO2016010003A1 WO 2016010003 A1 WO2016010003 A1 WO 2016010003A1 JP 2015070073 W JP2015070073 W JP 2015070073W WO 2016010003 A1 WO2016010003 A1 WO 2016010003A1
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- resin composition
- polyimide
- resin
- resin film
- film
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 285
- 239000011342 resin composition Substances 0.000 title claims abstract description 183
- 239000002243 precursor Substances 0.000 title claims abstract description 157
- 239000009719 polyimide resin Substances 0.000 title claims description 120
- 239000011347 resin Substances 0.000 title claims description 120
- 229920005989 resin Polymers 0.000 title claims description 120
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000012528 membrane Substances 0.000 title 1
- 239000004642 Polyimide Substances 0.000 claims abstract description 130
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 150000001875 compounds Chemical class 0.000 claims abstract description 67
- 239000003960 organic solvent Substances 0.000 claims abstract description 37
- 238000002835 absorbance Methods 0.000 claims abstract description 13
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 53
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 50
- 239000002904 solvent Substances 0.000 claims description 50
- 229910052760 oxygen Inorganic materials 0.000 claims description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 39
- 239000001301 oxygen Substances 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 32
- 239000004094 surface-active agent Substances 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 125000004432 carbon atom Chemical group C* 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 13
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 11
- 229920001296 polysiloxane Polymers 0.000 claims description 11
- 238000009835 boiling Methods 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 125000004434 sulfur atom Chemical group 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 45
- 239000002245 particle Substances 0.000 abstract description 12
- 238000006358 imidation reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 211
- 230000035882 stress Effects 0.000 description 58
- 238000000576 coating method Methods 0.000 description 48
- 229920005575 poly(amic acid) Polymers 0.000 description 45
- 239000011248 coating agent Substances 0.000 description 44
- 239000000243 solution Substances 0.000 description 39
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 34
- 238000001723 curing Methods 0.000 description 34
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 27
- 238000011156 evaluation Methods 0.000 description 27
- 238000003860 storage Methods 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 23
- -1 3,4-dicarboxyphenoxy Chemical group 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000000047 product Substances 0.000 description 20
- 238000003786 synthesis reaction Methods 0.000 description 17
- 239000002966 varnish Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 229920000642 polymer Polymers 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229920000052 poly(p-xylylene) Polymers 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 11
- 125000003118 aryl group Chemical group 0.000 description 10
- 150000004985 diamines Chemical class 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000005227 gel permeation chromatography Methods 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 8
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 8
- 239000004805 Cyclohexane-1,2-dicarboxylic acid Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000002313 adhesive film Substances 0.000 description 6
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 6
- 238000013007 heat curing Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 125000000962 organic group Chemical group 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 5
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- 229940125904 compound 1 Drugs 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000001846 repelling effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 150000003457 sulfones Chemical class 0.000 description 5
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000004202 carbamide Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000001991 dicarboxylic acids Chemical class 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 0 CC(C)C(C(C(CC1)C(*)=O)C=CC1C(C)([C+])C(CC1)CC(C(N)O)C1C(N)[U])=O Chemical compound CC(C)C(C(C(CC1)C(*)=O)C=CC1C(C)([C+])C(CC1)CC(C(N)O)C1C(N)[U])=O 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- CXISKMDTEFIGTG-UHFFFAOYSA-N [4-(1,3-dioxo-2-benzofuran-5-carbonyl)oxyphenyl] 1,3-dioxo-2-benzofuran-5-carboxylate Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(OC=2C=CC(OC(=O)C=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)=O)=C1 CXISKMDTEFIGTG-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- UKJLNMAFNRKWGR-UHFFFAOYSA-N cyclohexatrienamine Chemical group NC1=CC=C=C[CH]1 UKJLNMAFNRKWGR-UHFFFAOYSA-N 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 238000004383 yellowing Methods 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- BWKAYBPLDRWMCJ-UHFFFAOYSA-N 1,1-diethoxy-n,n-dimethylmethanamine Chemical compound CCOC(N(C)C)OCC BWKAYBPLDRWMCJ-UHFFFAOYSA-N 0.000 description 2
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
- NXXYKOUNUYWIHA-UHFFFAOYSA-N 2,6-Dimethylphenol Chemical compound CC1=CC=CC(C)=C1O NXXYKOUNUYWIHA-UHFFFAOYSA-N 0.000 description 2
- UZEBPNPRXOYGRA-UHFFFAOYSA-N 2-tripropoxysilylethanethiol Chemical compound CCCO[Si](CCS)(OCCC)OCCC UZEBPNPRXOYGRA-UHFFFAOYSA-N 0.000 description 2
- YCOXTKKNXUZSKD-UHFFFAOYSA-N 3,4-xylenol Chemical compound CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- CNODSORTHKVDEM-UHFFFAOYSA-N 4-trimethoxysilylaniline Chemical compound CO[Si](OC)(OC)C1=CC=C(N)C=C1 CNODSORTHKVDEM-UHFFFAOYSA-N 0.000 description 2
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- ZSXGLVDWWRXATF-UHFFFAOYSA-N N,N-dimethylformamide dimethyl acetal Chemical compound COC(OC)N(C)C ZSXGLVDWWRXATF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000004018 acid anhydride group Chemical group 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 239000000010 aprotic solvent Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- 229940125782 compound 2 Drugs 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 2
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 description 2
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 2
- SZIZIGBTHTUEBU-UHFFFAOYSA-N dimethoxy-bis(4-methylphenyl)silane Chemical compound C=1C=C(C)C=CC=1[Si](OC)(OC)C1=CC=C(C)C=C1 SZIZIGBTHTUEBU-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 150000002596 lactones Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- FCVNATXRSJMIDT-UHFFFAOYSA-N trihydroxy(phenyl)silane Chemical compound O[Si](O)(O)C1=CC=CC=C1 FCVNATXRSJMIDT-UHFFFAOYSA-N 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 2
- NLSXASIDNWDYMI-UHFFFAOYSA-N triphenylsilanol Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(O)C1=CC=CC=C1 NLSXASIDNWDYMI-UHFFFAOYSA-N 0.000 description 2
- SXGMVGOVILIERA-UHFFFAOYSA-N (2R,3S)-2,3-diaminobutanoic acid Natural products CC(N)C(N)C(O)=O SXGMVGOVILIERA-UHFFFAOYSA-N 0.000 description 1
- DGMUOPTYPWAHII-UHFFFAOYSA-N (3-aminophenyl) benzenesulfonate Chemical compound NC1=CC=CC(OS(=O)(=O)C=2C=CC=CC=2)=C1 DGMUOPTYPWAHII-UHFFFAOYSA-N 0.000 description 1
- KTFSNXDCNUXOMM-UHFFFAOYSA-N (3-dimethoxysilyl-3-ethoxypropyl)urea Chemical compound C(C)OC(CCNC(=O)N)[SiH](OC)OC KTFSNXDCNUXOMM-UHFFFAOYSA-N 0.000 description 1
- OLQWMCSSZKNOLQ-ZXZARUISSA-N (3s)-3-[(3r)-2,5-dioxooxolan-3-yl]oxolane-2,5-dione Chemical compound O=C1OC(=O)C[C@H]1[C@@H]1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-ZXZARUISSA-N 0.000 description 1
- JSSSSGRNRZNMKP-UHFFFAOYSA-N (4-aminophenyl) benzenesulfonate Chemical compound C1=CC(N)=CC=C1OS(=O)(=O)C1=CC=CC=C1 JSSSSGRNRZNMKP-UHFFFAOYSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PXGZQGDTEZPERC-UHFFFAOYSA-N 1,4-cyclohexanedicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)CC1 PXGZQGDTEZPERC-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- GEWWCWZGHNIUBW-UHFFFAOYSA-N 1-(4-nitrophenyl)propan-2-one Chemical compound CC(=O)CC1=CC=C([N+]([O-])=O)C=C1 GEWWCWZGHNIUBW-UHFFFAOYSA-N 0.000 description 1
- OOLUVSIJOMLOCB-UHFFFAOYSA-N 1633-22-3 Chemical compound C1CC(C=C2)=CC=C2CCC2=CC=C1C=C2 OOLUVSIJOMLOCB-UHFFFAOYSA-N 0.000 description 1
- IFFLKGMDBKQMAH-UHFFFAOYSA-N 2,4-diaminopyridine Chemical compound NC1=CC=NC(N)=C1 IFFLKGMDBKQMAH-UHFFFAOYSA-N 0.000 description 1
- KUFFULVDNCHOFZ-UHFFFAOYSA-N 2,4-xylenol Chemical compound CC1=CC=C(O)C(C)=C1 KUFFULVDNCHOFZ-UHFFFAOYSA-N 0.000 description 1
- IITPJNLABZNOKW-UHFFFAOYSA-N 2-(3,3-dimethoxypropoxysilyl)ethanethiol Chemical compound SCC[SiH2]OCCC(OC)OC IITPJNLABZNOKW-UHFFFAOYSA-N 0.000 description 1
- ZZUKYLKQZSNBRN-UHFFFAOYSA-N 2-(diethoxymethoxysilyl)ethanethiol Chemical compound CCOC(OCC)O[SiH2]CCS ZZUKYLKQZSNBRN-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical class CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- GDYYIJNDPMFMTB-UHFFFAOYSA-N 2-[3-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC(CC(O)=O)=C1 GDYYIJNDPMFMTB-UHFFFAOYSA-N 0.000 description 1
- SLWIPPZWFZGHEU-UHFFFAOYSA-N 2-[4-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=C(CC(O)=O)C=C1 SLWIPPZWFZGHEU-UHFFFAOYSA-N 0.000 description 1
- ZAEPYIXIHJSMDG-UHFFFAOYSA-N 2-[ethoxy(dimethoxy)silyl]ethanethiol Chemical compound CCO[Si](OC)(OC)CCS ZAEPYIXIHJSMDG-UHFFFAOYSA-N 0.000 description 1
- HIWADLOYXDNCOJ-UHFFFAOYSA-N 2-[methoxy(dipropoxy)silyl]ethanethiol Chemical compound CCCO[Si](CCS)(OC)OCCC HIWADLOYXDNCOJ-UHFFFAOYSA-N 0.000 description 1
- XMTYMJRPVFGBIM-UHFFFAOYSA-N 2-ethoxyethoxysilane Chemical compound CCOCCO[SiH3] XMTYMJRPVFGBIM-UHFFFAOYSA-N 0.000 description 1
- WKRJCCZAZDZNJL-UHFFFAOYSA-N 2-methoxyethoxysilicon Chemical compound COCCO[Si] WKRJCCZAZDZNJL-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- LOSLJXKHQKRRFN-UHFFFAOYSA-N 2-trimethoxysilylethanethiol Chemical compound CO[Si](OC)(OC)CCS LOSLJXKHQKRRFN-UHFFFAOYSA-N 0.000 description 1
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 1
- DUTLDPJDAOIISX-UHFFFAOYSA-N 3-(1,1,1,3,3,3-hexafluoropropan-2-yl)aniline Chemical compound NC1=CC=CC(C(C(F)(F)F)C(F)(F)F)=C1 DUTLDPJDAOIISX-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- YXDDYEIDPCTHJU-UHFFFAOYSA-N 3-(3,3-diethoxypropoxysilyl)propane-1-thiol Chemical compound SCCC[SiH2]OCCC(OCC)OCC YXDDYEIDPCTHJU-UHFFFAOYSA-N 0.000 description 1
- XERAKFCBBRZPAA-UHFFFAOYSA-N 3-(3,3-diethoxypropoxysilyl)propylurea Chemical compound C(C)OC(CCO[SiH2]CCCNC(=O)N)OCC XERAKFCBBRZPAA-UHFFFAOYSA-N 0.000 description 1
- MBRMVCHNEISRSY-UHFFFAOYSA-N 3-(3,3-dimethoxypropoxysilyl)propane-1-thiol Chemical compound SCCC[SiH2]OCCC(OC)OC MBRMVCHNEISRSY-UHFFFAOYSA-N 0.000 description 1
- ZFCNECLRCWFTLI-UHFFFAOYSA-N 3-(3-carboxyphenoxy)benzoic acid Chemical compound OC(=O)C1=CC=CC(OC=2C=C(C=CC=2)C(O)=O)=C1 ZFCNECLRCWFTLI-UHFFFAOYSA-N 0.000 description 1
- KHZYMPDILLAIQY-UHFFFAOYSA-N 3-(3-carboxyphenyl)benzoic acid Chemical compound OC(=O)C1=CC=CC(C=2C=C(C=CC=2)C(O)=O)=C1 KHZYMPDILLAIQY-UHFFFAOYSA-N 0.000 description 1
- HUPGCAGBHBJUJC-UHFFFAOYSA-N 3-(3-trimethoxysilylpropoxy)aniline Chemical compound CO[Si](OC)(OC)CCCOC1=CC=CC(N)=C1 HUPGCAGBHBJUJC-UHFFFAOYSA-N 0.000 description 1
- CULWHZJWAKFHMK-UHFFFAOYSA-N 3-(4-carboxyphenoxy)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=CC(C(O)=O)=C1 CULWHZJWAKFHMK-UHFFFAOYSA-N 0.000 description 1
- GSYIVQLTSZFJRV-UHFFFAOYSA-N 3-(4-carboxyphenyl)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1 GSYIVQLTSZFJRV-UHFFFAOYSA-N 0.000 description 1
- PBAXDYUTIYJYOL-UHFFFAOYSA-N 3-(4-carboxyphenyl)sulfonylbenzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1S(=O)(=O)C1=CC=CC(C(O)=O)=C1 PBAXDYUTIYJYOL-UHFFFAOYSA-N 0.000 description 1
- DUNWXOUUFMHWAO-UHFFFAOYSA-N 3-(diethoxymethoxysilyl)propane-1-thiol Chemical compound CCOC(OCC)O[SiH2]CCCS DUNWXOUUFMHWAO-UHFFFAOYSA-N 0.000 description 1
- PRYLMKKSDDKKKC-UHFFFAOYSA-N 3-(diethoxymethoxysilyl)propylurea Chemical compound C(C)OC(O[SiH2]CCCNC(=O)N)OCC PRYLMKKSDDKKKC-UHFFFAOYSA-N 0.000 description 1
- BZVMGPSXJDFUPI-UHFFFAOYSA-N 3-[2-(3-carboxyphenyl)propan-2-yl]benzoic acid Chemical compound C=1C=CC(C(O)=O)=CC=1C(C)(C)C1=CC=CC(C(O)=O)=C1 BZVMGPSXJDFUPI-UHFFFAOYSA-N 0.000 description 1
- VNAOAABUWOXVLO-UHFFFAOYSA-N 3-[3-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(C=CC=2)C(C(F)(F)F)C(F)(F)F)=C1 VNAOAABUWOXVLO-UHFFFAOYSA-N 0.000 description 1
- CYJFQGZWODINRP-UHFFFAOYSA-N 3-[3-[3-(3-carboxyphenoxy)-4-phenylphenyl]phenoxy]benzoic acid Chemical group OC(=O)C1=CC=CC(OC=2C=C(C=CC=2)C=2C=C(OC=3C=C(C=CC=3)C(O)=O)C(=CC=2)C=2C=CC=CC=2)=C1 CYJFQGZWODINRP-UHFFFAOYSA-N 0.000 description 1
- IBJRSMHHAOGAFT-UHFFFAOYSA-N 3-[3-[3-(3-carboxyphenoxy)phenyl]phenoxy]benzoic acid Chemical group OC(=O)C1=CC=CC(OC=2C=C(C=CC=2)C=2C=C(OC=3C=C(C=CC=3)C(O)=O)C=CC=2)=C1 IBJRSMHHAOGAFT-UHFFFAOYSA-N 0.000 description 1
- AHMPJHNWCFAZEO-UHFFFAOYSA-N 3-[3-[4-(3-carboxyphenoxy)-4-phenylcyclohexa-1,5-dien-1-yl]phenoxy]benzoic acid Chemical group OC(=O)C1=CC=CC(OC=2C=C(C=CC=2)C=2C=CC(OC=3C=C(C=CC=3)C(O)=O)(CC=2)C=2C=CC=CC=2)=C1 AHMPJHNWCFAZEO-UHFFFAOYSA-N 0.000 description 1
- QBZMNDFCOJOERO-UHFFFAOYSA-N 3-[3-[5-(3-carboxyphenoxy)-5-phenylcyclohexa-1,3-dien-1-yl]phenoxy]benzoic acid Chemical group OC(=O)C1=CC=CC(OC=2C=C(C=CC=2)C=2CC(C=CC=2)(OC=2C=C(C=CC=2)C(O)=O)C=2C=CC=CC=2)=C1 QBZMNDFCOJOERO-UHFFFAOYSA-N 0.000 description 1
- PMJIKKNFJBDSHO-UHFFFAOYSA-N 3-[3-aminopropyl(diethoxy)silyl]oxy-3-methylpentane-1,5-diol Chemical compound NCCC[Si](OCC)(OCC)OC(C)(CCO)CCO PMJIKKNFJBDSHO-UHFFFAOYSA-N 0.000 description 1
- OLPXTTWPTODVPV-UHFFFAOYSA-N 3-[4-[3-(3-carboxyphenoxy)phenyl]-2-phenylphenoxy]benzoic acid Chemical group OC(=O)C1=CC=CC(OC=2C=C(C=CC=2)C=2C=C(C(OC=3C=C(C=CC=3)C(O)=O)=CC=2)C=2C=CC=CC=2)=C1 OLPXTTWPTODVPV-UHFFFAOYSA-N 0.000 description 1
- RCVYZWGNFOSYSU-UHFFFAOYSA-N 3-[4-[4-(3-carboxyphenoxy)-3-phenylphenyl]phenoxy]benzoic acid Chemical group OC(=O)C1=CC=CC(OC=2C=CC(=CC=2)C=2C=C(C(OC=3C=C(C=CC=3)C(O)=O)=CC=2)C=2C=CC=CC=2)=C1 RCVYZWGNFOSYSU-UHFFFAOYSA-N 0.000 description 1
- ZJDVVVVXVQZJIG-UHFFFAOYSA-N 3-[4-[4-(3-carboxyphenoxy)-4-phenylcyclohexa-1,5-dien-1-yl]phenoxy]benzoic acid Chemical group OC(=O)C1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(C=CC=3)C(O)=O)(CC=2)C=2C=CC=CC=2)=C1 ZJDVVVVXVQZJIG-UHFFFAOYSA-N 0.000 description 1
- PDPOLLKLJPRSJJ-UHFFFAOYSA-N 3-[4-[4-(3-carboxyphenoxy)phenyl]phenoxy]benzoic acid Chemical group OC(=O)C1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(C=CC=3)C(O)=O)=CC=2)=C1 PDPOLLKLJPRSJJ-UHFFFAOYSA-N 0.000 description 1
- OSECUXURUYMCIW-UHFFFAOYSA-N 3-[4-[9-[4-(3-carboxyphenoxy)phenyl]fluoren-9-yl]phenoxy]benzoic acid Chemical compound OC(=O)C1=CC=CC(OC=2C=CC(=CC=2)C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(OC=3C=C(C=CC=3)C(O)=O)=CC=2)=C1 OSECUXURUYMCIW-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- JVFDAVPVBOBMKE-UHFFFAOYSA-N 3-[ethoxy(dipropoxy)silyl]propane-1-thiol Chemical compound CCCO[Si](CCCS)(OCC)OCCC JVFDAVPVBOBMKE-UHFFFAOYSA-N 0.000 description 1
- RSGDEBUAGQNQAL-UHFFFAOYSA-N 3-[methoxy(dipropoxy)silyl]propane-1-thiol Chemical compound CCCO[Si](CCCS)(OC)OCCC RSGDEBUAGQNQAL-UHFFFAOYSA-N 0.000 description 1
- KTFJPMPXSYUEIP-UHFFFAOYSA-N 3-benzoylphthalic acid Chemical compound OC(=O)C1=CC=CC(C(=O)C=2C=CC=CC=2)=C1C(O)=O KTFJPMPXSYUEIP-UHFFFAOYSA-N 0.000 description 1
- UAHAMNBFDHWCPU-UHFFFAOYSA-N 3-tributoxysilylpropan-1-amine Chemical compound CCCCO[Si](CCCN)(OCCCC)OCCCC UAHAMNBFDHWCPU-UHFFFAOYSA-N 0.000 description 1
- VAWAFDQDJMUWOG-UHFFFAOYSA-N 3-triethoxysilylbutylurea Chemical compound CCO[Si](OCC)(OCC)C(C)CCNC(N)=O VAWAFDQDJMUWOG-UHFFFAOYSA-N 0.000 description 1
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 description 1
- CTTNDYQVJLFCHW-UHFFFAOYSA-N 3-triethoxysilylpropyl n-tert-butylcarbamate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)NC(C)(C)C CTTNDYQVJLFCHW-UHFFFAOYSA-N 0.000 description 1
- YMTRNELCZAZKRB-UHFFFAOYSA-N 3-trimethoxysilylaniline Chemical compound CO[Si](OC)(OC)C1=CC=CC(N)=C1 YMTRNELCZAZKRB-UHFFFAOYSA-N 0.000 description 1
- PLOGDSRRTQCIOQ-UHFFFAOYSA-N 3-trimethoxysilylbutylurea Chemical compound CO[Si](OC)(OC)C(C)CCNC(N)=O PLOGDSRRTQCIOQ-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- GJDKMZMXNXDCHX-UHFFFAOYSA-N 3-tripropoxysilylbutylurea Chemical compound CCCO[Si](OCCC)(OCCC)C(C)CCNC(N)=O GJDKMZMXNXDCHX-UHFFFAOYSA-N 0.000 description 1
- XUZVALKTSQQLCH-UHFFFAOYSA-N 3-tripropoxysilylpropan-1-amine Chemical compound CCCO[Si](CCCN)(OCCC)OCCC XUZVALKTSQQLCH-UHFFFAOYSA-N 0.000 description 1
- DECHJJJXDGPZHY-UHFFFAOYSA-N 3-tripropoxysilylpropane-1-thiol Chemical compound CCCO[Si](CCCS)(OCCC)OCCC DECHJJJXDGPZHY-UHFFFAOYSA-N 0.000 description 1
- JYJOAXGGEJCHOW-UHFFFAOYSA-N 3-tripropoxysilylpropylurea Chemical compound CCCO[Si](OCCC)(OCCC)CCCNC(N)=O JYJOAXGGEJCHOW-UHFFFAOYSA-N 0.000 description 1
- BKQWDTFZUNGWNV-UHFFFAOYSA-N 4-(3,4-dicarboxycyclohexyl)cyclohexane-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(=O)O)CCC1C1CC(C(O)=O)C(C(O)=O)CC1 BKQWDTFZUNGWNV-UHFFFAOYSA-N 0.000 description 1
- XUBKCXMWPKLPPK-UHFFFAOYSA-N 4-(4-amino-2,6-dimethylphenyl)-3,5-dimethylaniline Chemical group CC1=CC(N)=CC(C)=C1C1=C(C)C=C(N)C=C1C XUBKCXMWPKLPPK-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- VUYFKAXNJXFNFA-UHFFFAOYSA-N 4-(4-carboxy-2-methylphenyl)-3-methylbenzoic acid Chemical compound CC1=CC(C(O)=O)=CC=C1C1=CC=C(C(O)=O)C=C1C VUYFKAXNJXFNFA-UHFFFAOYSA-N 0.000 description 1
- KWJNTOJAUQZMJO-UHFFFAOYSA-N 4-(4-carboxy-3-methylphenyl)-2-methylbenzoic acid Chemical compound C1=C(C(O)=O)C(C)=CC(C=2C=C(C)C(C(O)=O)=CC=2)=C1 KWJNTOJAUQZMJO-UHFFFAOYSA-N 0.000 description 1
- NEQFBGHQPUXOFH-UHFFFAOYSA-N 4-(4-carboxyphenyl)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C=C1 NEQFBGHQPUXOFH-UHFFFAOYSA-N 0.000 description 1
- SQJQLYOMPSJVQS-UHFFFAOYSA-N 4-(4-carboxyphenyl)sulfonylbenzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C=C1 SQJQLYOMPSJVQS-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- AMMZSOGDIDWWJV-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenoxy)-dimethylsilyl]oxyphthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1O[Si](C)(C)OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AMMZSOGDIDWWJV-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- XKACUVXWRVMXOE-UHFFFAOYSA-N 4-[2-(4-carboxyphenyl)propan-2-yl]benzoic acid Chemical compound C=1C=C(C(O)=O)C=CC=1C(C)(C)C1=CC=C(C(O)=O)C=C1 XKACUVXWRVMXOE-UHFFFAOYSA-N 0.000 description 1
- FQMLTKRIXDVJQN-UHFFFAOYSA-N 4-[2-[3-[2-(3,4-dicarboxyphenyl)propan-2-yl]phenyl]propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C(C=1)=CC=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 FQMLTKRIXDVJQN-UHFFFAOYSA-N 0.000 description 1
- JHFFQXYMIIPHEX-UHFFFAOYSA-N 4-[2-[4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phenyl]propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C(C=C1)=CC=C1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 JHFFQXYMIIPHEX-UHFFFAOYSA-N 0.000 description 1
- ZZPJFCKFFBAJBW-UHFFFAOYSA-N 4-[2-[9-[2-(4-aminophenoxy)phenyl]fluoren-9-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC=C1C1(C=2C(=CC=CC=2)OC=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 ZZPJFCKFFBAJBW-UHFFFAOYSA-N 0.000 description 1
- GQUSLIBGUTZKJZ-UHFFFAOYSA-N 4-[3-(3,4-dicarboxyphenoxy)phenoxy]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=CC(OC=2C=C(C(C(O)=O)=CC=2)C(O)=O)=C1 GQUSLIBGUTZKJZ-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- WLDQMQOYNIAUGG-UHFFFAOYSA-N 4-[3-[2-[3-(3,4-dicarboxyphenoxy)phenyl]propan-2-yl]phenoxy]phthalic acid Chemical compound C=1C=CC(OC=2C=C(C(C(O)=O)=CC=2)C(O)=O)=CC=1C(C)(C)C(C=1)=CC=CC=1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 WLDQMQOYNIAUGG-UHFFFAOYSA-N 0.000 description 1
- FBCRDIHAOXSUSH-UHFFFAOYSA-N 4-[3-[3-(4-carboxyphenoxy)-4-phenylphenyl]phenoxy]benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1OC1=CC=CC(C=2C=C(OC=3C=CC(=CC=3)C(O)=O)C(=CC=2)C=2C=CC=CC=2)=C1 FBCRDIHAOXSUSH-UHFFFAOYSA-N 0.000 description 1
- YJWXLVVUJYSQOO-UHFFFAOYSA-N 4-[3-[3-(4-carboxyphenoxy)phenyl]phenoxy]benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1OC1=CC=CC(C=2C=C(OC=3C=CC(=CC=3)C(O)=O)C=CC=2)=C1 YJWXLVVUJYSQOO-UHFFFAOYSA-N 0.000 description 1
- YBHJZULGEXXLLI-UHFFFAOYSA-N 4-[3-[5-(4-carboxyphenoxy)-5-phenylcyclohexa-1,3-dien-1-yl]phenoxy]benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1OC1=CC=CC(C=2CC(C=CC=2)(OC=2C=CC(=CC=2)C(O)=O)C=2C=CC=CC=2)=C1 YBHJZULGEXXLLI-UHFFFAOYSA-N 0.000 description 1
- ARUZFZXWTWJCQS-UHFFFAOYSA-N 4-[3-[[3-(3,4-dicarboxyphenoxy)phenyl]methyl]phenoxy]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=CC(CC=2C=C(OC=3C=C(C(C(O)=O)=CC=3)C(O)=O)C=CC=2)=C1 ARUZFZXWTWJCQS-UHFFFAOYSA-N 0.000 description 1
- SSDBTLHMCVFQMS-UHFFFAOYSA-N 4-[4-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C(F)(F)F)C(F)(F)F)C=C1 SSDBTLHMCVFQMS-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- AOLYZODQFYULKH-UHFFFAOYSA-N 4-[4-[3-(4-carboxyphenoxy)phenyl]-2-phenylphenoxy]benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1OC1=CC=CC(C=2C=C(C(OC=3C=CC(=CC=3)C(O)=O)=CC=2)C=2C=CC=CC=2)=C1 AOLYZODQFYULKH-UHFFFAOYSA-N 0.000 description 1
- MFJRANZPPAXGKK-UHFFFAOYSA-N 4-[4-[3-(4-carboxyphenoxy)phenyl]phenoxy]benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1OC1=CC=C(C=2C=C(OC=3C=CC(=CC=3)C(O)=O)C=CC=2)C=C1 MFJRANZPPAXGKK-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- HANAOHSBRDSBAE-UHFFFAOYSA-N 4-[4-[4-(4-carboxyphenoxy)-3-phenylphenyl]phenoxy]benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1OC1=CC=C(C=2C=C(C(OC=3C=CC(=CC=3)C(O)=O)=CC=2)C=2C=CC=CC=2)C=C1 HANAOHSBRDSBAE-UHFFFAOYSA-N 0.000 description 1
- NCXLJDOWHMDMOX-UHFFFAOYSA-N 4-[4-[4-(4-carboxyphenoxy)-4-phenylcyclohexa-1,5-dien-1-yl]phenoxy]benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(=CC=3)C(O)=O)(CC=2)C=2C=CC=CC=2)C=C1 NCXLJDOWHMDMOX-UHFFFAOYSA-N 0.000 description 1
- KHUXCBQLFLUTHV-UHFFFAOYSA-N 4-[4-[4-(4-carboxyphenoxy)phenyl]phenoxy]benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(=CC=3)C(O)=O)=CC=2)C=C1 KHUXCBQLFLUTHV-UHFFFAOYSA-N 0.000 description 1
- QMEURDXVEWKHAV-UHFFFAOYSA-N 4-[4-[9-[4-(4-carboxyphenoxy)phenyl]fluoren-9-yl]phenoxy]benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=C(C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(OC=3C=CC(=CC=3)C(O)=O)=CC=2)C=C1 QMEURDXVEWKHAV-UHFFFAOYSA-N 0.000 description 1
- BJKPPKGOOLEFNQ-UHFFFAOYSA-N 4-[4-[[4-(3,4-dicarboxyphenoxy)phenyl]methyl]phenoxy]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC(C=C1)=CC=C1CC(C=C1)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 BJKPPKGOOLEFNQ-UHFFFAOYSA-N 0.000 description 1
- HHJLKTCENRQCEF-UHFFFAOYSA-N 4-[4-amino-2,6-bis(trifluoromethyl)phenyl]-3,5-bis(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC(C(F)(F)F)=C1C1=C(C(F)(F)F)C=C(N)C=C1C(F)(F)F HHJLKTCENRQCEF-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical group C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- XZOQPRNOAGCWNT-UHFFFAOYSA-N 4-[[(3,4-dicarboxyphenyl)-dimethylsilyl]oxy-dimethylsilyl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1[Si](C)(C)O[Si](C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 XZOQPRNOAGCWNT-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- YYEWRNLQOAIQDL-UHFFFAOYSA-N 4-phenylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC=C1 YYEWRNLQOAIQDL-UHFFFAOYSA-N 0.000 description 1
- BHTZPJXABISXPB-UHFFFAOYSA-N 4-triethoxysilylbutan-2-amine Chemical compound CCO[Si](OCC)(OCC)CCC(C)N BHTZPJXABISXPB-UHFFFAOYSA-N 0.000 description 1
- RVAVYOJYNISEQK-UHFFFAOYSA-N 4-triethoxysilylbutane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCCS RVAVYOJYNISEQK-UHFFFAOYSA-N 0.000 description 1
- QAPHWZATUFXMGN-UHFFFAOYSA-N 4-trimethoxysilylbutan-2-amine Chemical compound CO[Si](OC)(OC)CCC(C)N QAPHWZATUFXMGN-UHFFFAOYSA-N 0.000 description 1
- ONPDPADPZNBIDE-UHFFFAOYSA-N 4-tripropoxysilylbutan-2-amine Chemical compound CCCO[Si](CCC(C)N)(OCCC)OCCC ONPDPADPZNBIDE-UHFFFAOYSA-N 0.000 description 1
- JRYUZCLLNMIMQM-UHFFFAOYSA-N 4-tripropoxysilylbutane-1-thiol Chemical compound CCCO[Si](OCCC)(OCCC)CCCCS JRYUZCLLNMIMQM-UHFFFAOYSA-N 0.000 description 1
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 description 1
- JYCTWJFSRDBYJX-UHFFFAOYSA-N 5-(2,5-dioxooxolan-3-yl)-3a,4,5,9b-tetrahydrobenzo[e][2]benzofuran-1,3-dione Chemical compound O=C1OC(=O)CC1C1C2=CC=CC=C2C(C(=O)OC2=O)C2C1 JYCTWJFSRDBYJX-UHFFFAOYSA-N 0.000 description 1
- MQAHXEQUBNDFGI-UHFFFAOYSA-N 5-[4-[2-[4-[(1,3-dioxo-2-benzofuran-5-yl)oxy]phenyl]propan-2-yl]phenoxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC2=CC=C(C=C2)C(C)(C=2C=CC(OC=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)C)=C1 MQAHXEQUBNDFGI-UHFFFAOYSA-N 0.000 description 1
- KBZFDRWPMZESDI-UHFFFAOYSA-N 5-aminobenzene-1,3-dicarboxylic acid Chemical class NC1=CC(C(O)=O)=CC(C(O)=O)=C1 KBZFDRWPMZESDI-UHFFFAOYSA-N 0.000 description 1
- UWLZEGRKCBALET-UHFFFAOYSA-N 6-(2,5-dioxooxolan-3-yl)-4-methyl-4,5,6,7-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)=C2C(C)CC1C1CC(=O)OC1=O UWLZEGRKCBALET-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- IWZFAXRXYKJQQN-UHFFFAOYSA-N CCCO[SiH2]OC Chemical compound CCCO[SiH2]OC IWZFAXRXYKJQQN-UHFFFAOYSA-N 0.000 description 1
- ODOLGLBWYRCMKQ-UHFFFAOYSA-N COC(C(OCC)(OC)OC)(O[SiH3])OC Chemical compound COC(C(OCC)(OC)OC)(O[SiH3])OC ODOLGLBWYRCMKQ-UHFFFAOYSA-N 0.000 description 1
- LBWPSLFMXZZIRY-UHFFFAOYSA-N CO[SiH](CC(C)c1ccccn1)OC Chemical compound CO[SiH](CC(C)c1ccccn1)OC LBWPSLFMXZZIRY-UHFFFAOYSA-N 0.000 description 1
- WVOLTBSCXRRQFR-SJORKVTESA-N Cannabidiolic acid Natural products OC1=C(C(O)=O)C(CCCCC)=CC(O)=C1[C@@H]1[C@@H](C(C)=C)CCC(C)=C1 WVOLTBSCXRRQFR-SJORKVTESA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- ZPAKUZKMGJJMAA-UHFFFAOYSA-N Cyclohexane-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)CC1C(O)=O ZPAKUZKMGJJMAA-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- QOSSAOTZNIDXMA-UHFFFAOYSA-N Dicylcohexylcarbodiimide Chemical compound C1CCCCC1N=C=NC1CCCCC1 QOSSAOTZNIDXMA-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- DLEPYXFUDLQGDW-UHFFFAOYSA-N FC(F)(F)NC1=CC=C(C2=CC=C(NC(F)(F)F)C=C2)C=C1 Chemical compound FC(F)(F)NC1=CC=C(C2=CC=C(NC(F)(F)F)C=C2)C=C1 DLEPYXFUDLQGDW-UHFFFAOYSA-N 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- PMIQYFKXBTZZSB-UHFFFAOYSA-N NC(=O)N.COC(CCO[SiH2]CCCNC(=O)N)OC Chemical compound NC(=O)N.COC(CCO[SiH2]CCCNC(=O)N)OC PMIQYFKXBTZZSB-UHFFFAOYSA-N 0.000 description 1
- PBDVZLDSKVNMDV-UHFFFAOYSA-N O(C1=CC=C(C(=O)O)C=C1)C1=CC=C(C(=O)O)C=C1.S(=O)(=O)(C=1C=C(C(=O)O)C=CC1)C=1C=C(C(=O)O)C=CC1 Chemical compound O(C1=CC=C(C(=O)O)C=C1)C1=CC=C(C(=O)O)C=C1.S(=O)(=O)(C=1C=C(C(=O)O)C=CC1)C=1C=C(C(=O)O)C=CC1 PBDVZLDSKVNMDV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- SYSOWLVWOPKSFG-UHFFFAOYSA-N SCC[SiH2]OCCCOCC Chemical compound SCC[SiH2]OCCCOCC SYSOWLVWOPKSFG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- OPARTXXEFXPWJL-UHFFFAOYSA-N [acetyloxy-bis[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)(C)C)OC(C)(C)C OPARTXXEFXPWJL-UHFFFAOYSA-N 0.000 description 1
- VXQOFNJETKUWLT-UHFFFAOYSA-N [dimethoxy(methyl)silyl]methanethiol Chemical compound CO[Si](C)(CS)OC VXQOFNJETKUWLT-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229940064734 aminobenzoate Drugs 0.000 description 1
- MRSWDOKCESOYBI-UHFFFAOYSA-N anthracene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=CC2=C1 MRSWDOKCESOYBI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 1
- BKDVBBSUAGJUBA-UHFFFAOYSA-N bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid Chemical compound C1=CC2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O BKDVBBSUAGJUBA-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- LDOKGSQCTMGUCO-UHFFFAOYSA-N butyl-ethyl-hydroxy-phenylsilane Chemical compound CCCC[Si](O)(CC)C1=CC=CC=C1 LDOKGSQCTMGUCO-UHFFFAOYSA-N 0.000 description 1
- GEEVFOWFGFZMKW-UHFFFAOYSA-N butyl-hydroxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(CCCC)C1=CC=CC=C1 GEEVFOWFGFZMKW-UHFFFAOYSA-N 0.000 description 1
- JZQYTILZARPJMT-UHFFFAOYSA-N butyl-hydroxy-methyl-phenylsilane Chemical compound CCCC[Si](C)(O)C1=CC=CC=C1 JZQYTILZARPJMT-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- WVOLTBSCXRRQFR-DLBZAZTESA-N cannabidiolic acid Chemical compound OC1=C(C(O)=O)C(CCCCC)=CC(O)=C1[C@H]1[C@H](C(C)=C)CCC(C)=C1 WVOLTBSCXRRQFR-DLBZAZTESA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- CCQPAEQGAVNNIA-UHFFFAOYSA-N cyclobutane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCC1 CCQPAEQGAVNNIA-UHFFFAOYSA-N 0.000 description 1
- SMEJCQZFRMVYGC-UHFFFAOYSA-N cyclohexane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)C(C(O)=O)C1C(O)=O SMEJCQZFRMVYGC-UHFFFAOYSA-N 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- STZIXLPVKZUAMV-UHFFFAOYSA-N cyclopentane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1(C(O)=O)C(O)=O STZIXLPVKZUAMV-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- XGUNOBQJSJSFLG-UHFFFAOYSA-N dihydroxy-(2-methylpropyl)-phenylsilane Chemical compound CC(C)C[Si](O)(O)C1=CC=CC=C1 XGUNOBQJSJSFLG-UHFFFAOYSA-N 0.000 description 1
- RBSBUSKLSKHTBA-UHFFFAOYSA-N dihydroxy-methyl-phenylsilane Chemical compound C[Si](O)(O)C1=CC=CC=C1 RBSBUSKLSKHTBA-UHFFFAOYSA-N 0.000 description 1
- BGGSHDAFUHWTJY-UHFFFAOYSA-N dihydroxy-phenyl-propan-2-ylsilane Chemical compound CC(C)[Si](O)(O)C1=CC=CC=C1 BGGSHDAFUHWTJY-UHFFFAOYSA-N 0.000 description 1
- VTOJOSYEOUXEDF-UHFFFAOYSA-N dihydroxy-phenyl-propylsilane Chemical compound CCC[Si](O)(O)C1=CC=CC=C1 VTOJOSYEOUXEDF-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 150000002148 esters Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- WEQLQTCIJDTCKC-UHFFFAOYSA-N ethoxy-dimethoxy-propylsilane Chemical compound CCC[Si](OC)(OC)OCC WEQLQTCIJDTCKC-UHFFFAOYSA-N 0.000 description 1
- AVHQYNBSFNOKCT-UHFFFAOYSA-N ethyl-dihydroxy-phenylsilane Chemical compound CC[Si](O)(O)C1=CC=CC=C1 AVHQYNBSFNOKCT-UHFFFAOYSA-N 0.000 description 1
- ZFERNGZLZDSUPH-UHFFFAOYSA-N ethyl-hydroxy-(2-methylpropyl)-phenylsilane Chemical compound CC(C)C[Si](O)(CC)C1=CC=CC=C1 ZFERNGZLZDSUPH-UHFFFAOYSA-N 0.000 description 1
- UFAHFMYBTCNZPM-UHFFFAOYSA-N ethyl-hydroxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(CC)C1=CC=CC=C1 UFAHFMYBTCNZPM-UHFFFAOYSA-N 0.000 description 1
- JFBTVTLFBGJGPA-UHFFFAOYSA-N ethyl-hydroxy-methyl-phenylsilane Chemical compound CC[Si](C)(O)C1=CC=CC=C1 JFBTVTLFBGJGPA-UHFFFAOYSA-N 0.000 description 1
- MGLPUHWTRVIBKO-UHFFFAOYSA-N ethyl-hydroxy-phenyl-propan-2-ylsilane Chemical compound CC[Si](O)(C(C)C)C1=CC=CC=C1 MGLPUHWTRVIBKO-UHFFFAOYSA-N 0.000 description 1
- SOFJSIIYDIMYKZ-UHFFFAOYSA-N ethyl-hydroxy-phenyl-propylsilane Chemical compound CCC[Si](O)(CC)C1=CC=CC=C1 SOFJSIIYDIMYKZ-UHFFFAOYSA-N 0.000 description 1
- GBASTSRAHRGUAB-UHFFFAOYSA-N ethylenetetracarboxylic dianhydride Chemical compound O=C1OC(=O)C2=C1C(=O)OC2=O GBASTSRAHRGUAB-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- CHAJJKUXTUIBMZ-UHFFFAOYSA-N hydroxy-(2-methylpropyl)-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(CC(C)C)C1=CC=CC=C1 CHAJJKUXTUIBMZ-UHFFFAOYSA-N 0.000 description 1
- XPNHTKZQLZVYHZ-UHFFFAOYSA-N hydroxy-diphenyl-propan-2-ylsilane Chemical compound C=1C=CC=CC=1[Si](O)(C(C)C)C1=CC=CC=C1 XPNHTKZQLZVYHZ-UHFFFAOYSA-N 0.000 description 1
- ONVJULYGRCXHAY-UHFFFAOYSA-N hydroxy-diphenyl-propylsilane Chemical compound C=1C=CC=CC=1[Si](O)(CCC)C1=CC=CC=C1 ONVJULYGRCXHAY-UHFFFAOYSA-N 0.000 description 1
- MLPRTGXXQKWLDM-UHFFFAOYSA-N hydroxy-methyl-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(C)C1=CC=CC=C1 MLPRTGXXQKWLDM-UHFFFAOYSA-N 0.000 description 1
- LLENFDWLUJBNFC-UHFFFAOYSA-N hydroxy-methyl-phenyl-propan-2-ylsilane Chemical compound CC(C)[Si](C)(O)C1=CC=CC=C1 LLENFDWLUJBNFC-UHFFFAOYSA-N 0.000 description 1
- FQQOMIXCGMRXEH-UHFFFAOYSA-N hydroxy-methyl-phenyl-propylsilane Chemical compound CCC[Si](C)(O)C1=CC=CC=C1 FQQOMIXCGMRXEH-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 description 1
- DFFZOPXDTCDZDP-UHFFFAOYSA-N naphthalene-1,5-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1C(O)=O DFFZOPXDTCDZDP-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- UMSVUULWTOXCQY-UHFFFAOYSA-N phenanthrene-1,2,7,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1C(O)=O UMSVUULWTOXCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920012287 polyphenylene sulfone Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- SRWOQYHYUYGUCS-UHFFFAOYSA-N tert-butyl-dihydroxy-phenylsilane Chemical compound CC(C)(C)[Si](O)(O)C1=CC=CC=C1 SRWOQYHYUYGUCS-UHFFFAOYSA-N 0.000 description 1
- HAQMPJFWQWLQDO-UHFFFAOYSA-N tert-butyl-ethyl-hydroxy-phenylsilane Chemical compound CC[Si](O)(C(C)(C)C)C1=CC=CC=C1 HAQMPJFWQWLQDO-UHFFFAOYSA-N 0.000 description 1
- UNAYGNMKNYRIHL-UHFFFAOYSA-N tert-butyl-hydroxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O)(C(C)(C)C)C1=CC=CC=C1 UNAYGNMKNYRIHL-UHFFFAOYSA-N 0.000 description 1
- VLKDZHUARIPFFA-UHFFFAOYSA-N tert-butyl-hydroxy-methyl-phenylsilane Chemical compound CC(C)(C)[Si](C)(O)C1=CC=CC=C1 VLKDZHUARIPFFA-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000014616 translation Effects 0.000 description 1
- YFNYCSJNUJQGNF-UHFFFAOYSA-N triethoxy(1-triethoxysilylethenyl)silane Chemical group CCO[Si](OCC)(OCC)C(=C)[Si](OCC)(OCC)OCC YFNYCSJNUJQGNF-UHFFFAOYSA-N 0.000 description 1
- FOQJQXVUMYLJSU-UHFFFAOYSA-N triethoxy(1-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)[Si](OCC)(OCC)OCC FOQJQXVUMYLJSU-UHFFFAOYSA-N 0.000 description 1
- VJDYPOQWHRJALO-UHFFFAOYSA-N triethoxy(1-triethoxysilylocta-1,3-dienyl)silane Chemical compound CCCCC=CC=C([Si](OCC)(OCC)OCC)[Si](OCC)(OCC)OCC VJDYPOQWHRJALO-UHFFFAOYSA-N 0.000 description 1
- KMLVDTJUQJXRRH-UHFFFAOYSA-N triethoxy(2-pyridin-2-ylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC1=CC=CC=N1 KMLVDTJUQJXRRH-UHFFFAOYSA-N 0.000 description 1
- NIINUVYELHEORX-UHFFFAOYSA-N triethoxy(triethoxysilylmethyl)silane Chemical compound CCO[Si](OCC)(OCC)C[Si](OCC)(OCC)OCC NIINUVYELHEORX-UHFFFAOYSA-N 0.000 description 1
- FBBATURSCRIBHN-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyldisulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSCCC[Si](OCC)(OCC)OCC FBBATURSCRIBHN-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- JBYXACURRYATNJ-UHFFFAOYSA-N trimethoxy(1-trimethoxysilylhexyl)silane Chemical compound CCCCCC([Si](OC)(OC)OC)[Si](OC)(OC)OC JBYXACURRYATNJ-UHFFFAOYSA-N 0.000 description 1
- XVZMLSWFBPLMEA-UHFFFAOYSA-N trimethoxy(2-pyridin-2-ylethyl)silane Chemical compound CO[Si](OC)(OC)CCC1=CC=CC=N1 XVZMLSWFBPLMEA-UHFFFAOYSA-N 0.000 description 1
- JCGDCINCKDQXDX-UHFFFAOYSA-N trimethoxy(2-trimethoxysilylethyl)silane Chemical compound CO[Si](OC)(OC)CC[Si](OC)(OC)OC JCGDCINCKDQXDX-UHFFFAOYSA-N 0.000 description 1
- XQEGZYAXBCFSBS-UHFFFAOYSA-N trimethoxy-(4-methylphenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=C(C)C=C1 XQEGZYAXBCFSBS-UHFFFAOYSA-N 0.000 description 1
- QJOOZNCPHALTKK-UHFFFAOYSA-N trimethoxysilylmethanethiol Chemical compound CO[Si](CS)(OC)OC QJOOZNCPHALTKK-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/003—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor characterised by the choice of material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/60—Releasing, lubricating or separating agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/34—Component parts, details or accessories; Auxiliary operations
- B29C41/42—Removing articles from moulds, cores or other substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/043—Improving the adhesiveness of the coatings per se, e.g. forming primers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/05—Forming flame retardant coatings or fire resistant coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/02—Halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
- C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/549—Silicon-containing compounds containing silicon in a ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
- G02F1/133723—Polyimide, polyamide-imide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0838—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C2791/00—Shaping characteristics in general
- B29C2791/004—Shaping under special conditions
- B29C2791/009—Using laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/60—Releasing, lubricating or separating agents
- B29C33/62—Releasing, lubricating or separating agents based on polymers or oligomers
- B29C33/64—Silicone
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C41/12—Spreading-out the material on a substrate, e.g. on the surface of a liquid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2079/00—Use of polymers having nitrogen, with or without oxygen or carbon only, in the main chain, not provided for in groups B29K2061/00 - B29K2077/00, as moulding material
- B29K2079/08—PI, i.e. polyimides or derivatives thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2105/00—Condition, form or state of moulded material or of the material to be shaped
- B29K2105/0058—Liquid or visquous
- B29K2105/0073—Solution
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2007/00—Flat articles, e.g. films or sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2007/00—Flat articles, e.g. films or sheets
- B29L2007/002—Panels; Plates; Sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2007/00—Flat articles, e.g. films or sheets
- B29L2007/008—Wide strips, e.g. films, webs
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/02—Flame or fire retardant/resistant
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/08—Stabilised against heat, light or radiation or oxydation
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/10—Transparent films; Clear coatings; Transparent materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
Definitions
- the present invention is, for example, used for a substrate for a flexible device, a resin precursor and a resin composition containing the resin precursor, a polyimide resin film, a resin film and a manufacturing method thereof, a laminate and a manufacturing method thereof, and a display substrate And a manufacturing method thereof.
- a polyimide (PI) resin film is used as a resin film for applications requiring high heat resistance.
- a general polyimide resin is a solution polymerization of an aromatic dianhydride and an aromatic diamine to produce a polyimide precursor, followed by ring-closing dehydration at high temperature, thermal imidization, or chemical imidization using a catalyst. It is a highly heat-resistant resin that is manufactured.
- Polyimide resin is an insoluble and infusible super heat resistant resin, and has excellent characteristics such as heat oxidation resistance, heat resistance, radiation resistance, low temperature resistance, and chemical resistance. For this reason, polyimide resins are used in a wide range of fields including electronic materials such as insulating coating agents, insulating films, semiconductors, and electrode protection films for TFT-LCDs, and recently in the field of display materials such as liquid crystal alignment films. Instead of the conventionally used glass substrate, the adoption of a colorless and transparent flexible substrate utilizing its lightness and flexibility is also being studied.
- Non-Patent Document 1 a method for inhibiting the formation of a charge transfer complex and introducing transparency by introducing fluorine into the polyimide resin, imparting flexibility to the main chain, introducing bulky side chains, etc.
- the polyimide resin obtained from PMDA, 6FDA and TFMB is excellent in light transmittance, yellowness (YI value) and thermal expansion coefficient (CTE), and can be applied as a material for LCD.
- Patent Documents 2 and 3 the polyimide resin obtained from PMDA, 6FDA and TFMB has a small difference in CTE from the gas barrier film (inorganic film), and a display device having a gas barrier layer on the polyimide resin film has been proposed (Patent Literature). 4).
- the proposal which uses for a flexible device use is made about the resin composition which has a polyimide precursor and an alkoxysilane compound (patent document 5).
- transparent polyimides were not sufficient for use as, for example, semiconductor insulating films, TFT-LCD insulating films, electrode protective films, ITO electrode substrates for touch panels, and heat-resistant colorless transparent substrates for flexible displays.
- the energy required for peeling the polyimide film and the glass substrate by laser peeling is low, but in the case of a polymer having a low residual stress, the energy required Therefore, there is a problem that particles are generated during laser peeling.
- the first aspect of the present invention has been made in view of the above-described problems, It is another object of the present invention to provide a resin composition that has good adhesion to a glass substrate and does not generate particles during laser peeling even in the case of a polymer having low residual stress.
- the first aspect of the present invention has been made in view of the above-described problems, and is a resin composition containing a polyimide precursor that has excellent adhesion to a glass substrate and does not generate particles during laser peeling. The purpose is to provide.
- the second aspect of the present invention has been made in view of the above-described problems, It aims at providing the resin composition containing the polyimide precursor which is excellent in storage stability and excellent in coating property.
- the present invention has a low residual stress, a small yellowness (YI value), a small influence on the YI value and the total light transmittance due to the oxygen concentration during the curing process (heat curing process), and a difference in refractive index between the front and back sides.
- An object is to provide a small polyimide resin film and resin film, a manufacturing method thereof, a laminate, and a manufacturing method thereof.
- a further object of the present invention is to provide a display substrate having a low refractive index difference between the front and back sides and a low yellowness, and a method for manufacturing the same.
- a polyimide precursor that generates a residual stress within a specific range when a polyimide is formed, and an alkoxysilane compound having a specific ratio of absorbance at 308 nm are formed of a glass substrate (support). Found that it has excellent adhesion and does not produce particles during laser peeling.
- the resin composition containing the polyimide precursor having a specific structure has excellent storage stability and excellent coating properties;
- the polyimide film obtained by curing the composition has a low residual stress, a small yellowness (YI value), and a small influence on the YI value and the total light transmittance due to the oxygen concentration during the curing process;
- the inorganic film formed on the polyimide film has a small haze; and as a method for peeling the polyimide resin film from the support, a laser film and / or a peeling layer is used to provide a low refractive index difference between the front and back of the resin film.
- the inventors have found that the low YI value is satisfied, and have reached the present invention based on these findings. That is, the present invention is as follows.
- a resin composition comprising (a) a polyimide precursor, (b) an organic solvent, and (d) an alkoxysilane compound, After applying the resin composition to the surface of the support, (a) the polyimide obtained by imidizing the polyimide precursor has a residual stress with the support of -5 MPa to 10 MPa, and The (d) alkoxysilane compound is a resin composition having an absorbance at 308 nm of 0.1 or more and 0.5 or less at a thickness of 1 cm when the NMP solution is 0.001% by mass.
- the (d) alkoxysilane compound has the following general formulas (2) to (4):
- the (a) polyimide precursor is represented by the following formula (5):
- a structural unit represented by the following formula (6) The resin composition according to any one of [1] to [3], which has a structural unit represented by: [5]
- the molar ratio between the structural unit represented by the formula (5) and the structural unit represented by the formula (6) is 90/10 to 50/50, [1]
- the molar ratio of the structural unit represented by the formula (5) and the structural unit represented by the formula (6) is 90/10 to 50/50, [6] or [7] The resin composition according to [7].
- (a) a polyimide precursor, and (b) a resin composition containing an organic solvent The (a) polyimide precursor is represented by the following formula (5): A polyimide precursor having a structural unit represented by the following formula (6): The resin composition which is a mixture with the polyimide precursor which has a structural unit shown by these.
- the weight ratio of the polyimide precursor having the structural unit represented by the formula (5) and the polyimide precursor having the structural unit represented by the formula (6) is 90/10 to 50/50.
- the resin composition described in 1. [11] The resin composition according to any one of [1] to [10], wherein the water content is 3000 ppm or less. [12] The resin composition according to any one of [1] to [11], wherein (b) the organic solvent is an organic solvent having a boiling point of 170 to 270 ° C. [13] The resin composition according to any one of [1] to [12], wherein the organic solvent (b) is an organic solvent having a vapor pressure at 20 ° C. of 250 Pa or less.
- the step of peeling the polyimide resin film on which the element or circuit is formed from the support includes the step of peeling the polyimide resin film from the structure including the polyimide resin film / peeling layer / support.
- the manufacturing method of the resin film of description [28] A laminate comprising a support and a polyimide resin film, which is a cured product of the resin composition according to any one of [6] to [19], formed on the surface of the support. [29] [6] to [18] a step of coating the resin composition according to any one on the surface of the support; A step of heating the support and the resin composition to imidize the resin precursor contained in the resin composition to form a polyimide resin film.
- [30] Applying the resin composition according to any one of [6] to [18] to a support and heating to form a polyimide resin film; Forming an element or a circuit on the polyimide resin film; Each step of peeling the polyimide resin film on which the element or circuit is formed from the support,
- a method for manufacturing a display substrate comprising: [31] A display substrate formed by the method for manufacturing a display substrate according to [30]. [32] [19] A laminate obtained by laminating the polyimide film according to [19], SiN, and SiO 2 in this order.
- the resin composition containing the polyimide precursor according to the present invention is excellent in adhesiveness with a glass substrate (support) and does not generate particles during laser peeling. Therefore, in the first aspect, it is possible to provide a resin composition that is excellent in adhesiveness with a glass substrate (support) and does not generate particles during laser peeling.
- the storage stability is excellent and the coating property is excellent.
- the polyimide resin film and resin film obtained from the composition have low residual stress, small yellowness (YI value), and little influence on the YI value and the total light transmittance due to the oxygen concentration during the curing process. Therefore, in this invention, the resin composition containing the polyimide precursor which is excellent in storage stability and excellent in coating property can be provided.
- the present invention has a low residual stress, a small yellowness (YI value), a small influence on the YI value and the total light transmittance due to the oxygen concentration during the curing process (heat curing process), and a difference in refractive index between the front and back sides.
- YI value small yellowness
- the present invention can provide a display substrate having a low refractive index difference between the front and back surfaces and a low yellowness, and a method for manufacturing the same.
- the resin composition provided by the first aspect of the present invention is: (a) contains a polyimide precursor, (b) an organic solvent, and (d) an alkoxysilane compound.
- a polyimide precursor contains a polyimide precursor, (b) an organic solvent, and (d) an alkoxysilane compound.
- each component will be described in order.
- the polyimide precursor in the first embodiment is a polyimide precursor that has a residual stress of ⁇ 5 MPa or more and 10 MPa or less when it becomes a polyimide.
- the residual stress can be measured by the method described in Examples described later.
- Examples of the support in the first embodiment include a glass substrate, a silicone wafer, and an inorganic film.
- the polyimide precursor in the first embodiment is not limited as long as the residual stress when it becomes a polyimide is ⁇ 5 MPa or more and 10 MPa or less, but from the viewpoint of warping after forming the inorganic film, it is ⁇ 3 MPa or more and 3 MPa or less. preferable. From the viewpoint of application to a flexible display, the yellowness is preferably 15 or less at a film thickness of 10 ⁇ m.
- a polyimide precursor which gives a polyimide having a residual stress of ⁇ 5 MPa or more and 10 MPa or less and a yellowness of 15 or less at a film thickness of 10 ⁇ m will be described.
- the polyimide precursor in the first aspect is preferably represented by the following general formula (8).
- each R 1 is independently a hydrogen atom, a monovalent aliphatic hydrocarbon having 1 to 20 carbon atoms, or an aromatic group having 6 to 10 carbon atoms;
- X 1 is a tetravalent organic group having 4 to 32 carbon atoms;
- X 2 is a divalent organic group having 4 to 32 carbon atoms.
- the general formula (8) is a structure obtained by reacting tetracarboxylic dianhydride and diamine.
- X 1 is derived from tetracarboxylic dianhydride and X 2 is derived from diamine.
- X 2 in the general formula (8) is derived from 2,2′-bis (trifluoromethyl) benzidine, 4,4- (diaminodiphenyl) sulfone, and 3,3- (diaminodiphenyl) sulfone. It is preferable that it is a residue.
- ⁇ Tetracarboxylic dianhydride> Next, the tetracarboxylic dianhydride that leads to the tetravalent organic group X 1 contained in the general formula (8) will be described.
- tetracarboxylic dianhydride examples include aromatic tetracarboxylic dianhydrides having 8 to 36 carbon atoms, aliphatic tetracarboxylic dianhydrides having 6 to 50 carbon atoms, and carbon numbers. Is preferably a compound selected from 6-36 alicyclic tetracarboxylic dianhydrides.
- the number of carbons herein includes the number of carbons contained in the carboxyl group.
- examples of the aromatic tetracarboxylic dianhydride having 8 to 36 carbon atoms include 4,4 ′-(hexafluoroisopropylidene) diphthalic anhydride (hereinafter also referred to as 6FDA), 5- ( 2,5-dioxotetrahydro-3-furanyl) -3-methyl-cyclohexene-1,2 dicarboxylic acid anhydride, pyromellitic dianhydride (hereinafter also referred to as PMDA), 1,2,3,4-benzene Tetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride (hereinafter also referred to as BTDA), 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride (hereinafter also referred to as BPDA), 3, 3,4
- Examples of the aliphatic tetracarboxylic dianhydride having 6 to 50 carbon atoms include ethylene tetracarboxylic dianhydride and 1,2,3,4-butanetetracarboxylic dianhydride; Examples of the alicyclic tetracarboxylic dianhydride having 6 to 36 carbon atoms include 1,2,3,4-cyclobutanetetracarboxylic dianhydride (hereinafter also referred to as CBDA), cyclopentanetetracarboxylic dianhydride.
- CBDA 1,2,3,4-cyclobutanetetracarboxylic dianhydride
- Cyclohexane-1,2,3,4-tetracarboxylic dianhydride, cyclohexane-1,2,4,5-tetracarboxylic dianhydride (hereinafter referred to as CHDA), 3,3 ′, 4,4 '-Bicyclohexyltetracarboxylic dianhydride, carbonyl-4,4'-bis (cyclohexane-1,2-dicarboxylic acid) dianhydride, methylene-4,4'-bis (cyclohexane-1,2-dicarboxylic acid ) Dianhydride, 1,2-ethylene-4,4′-bis (cyclohexane-1,2-dicarboxylic acid) dianhydride, 1,1-ethylidene-4,4′-bis (cyclohexane-1,2) Dicarboxylic acid) dianhydride, 2,2-propylidene-4,4′-bis (cyclohexane-1,2-dicarboxylic acid) dianhydride,
- the use of one or more selected from the group consisting of BTDA, PMDA, BPDA and TAHQ can reduce CTE, improve chemical resistance, improve glass transition temperature (Tg), and improve mechanical elongation. It is preferable from the viewpoint.
- one or more selected from the group consisting of 6FDA, ODPA and BPADA to reduce yellowness, birefringence, and mechanical elongation. It is preferable from the viewpoint of improvement.
- BPDA is preferable from the viewpoints of reducing residual stress, reducing yellowness, reducing birefringence, improving chemical resistance, improving Tg, and improving mechanical elongation.
- CHDA is preferable from the viewpoints of reduction of residual stress and reduction of yellowness.
- at least one selected from the group consisting of PMDA and BPDA having a tough structure that exhibits high chemical resistance, high Tg and low CTE, and low yellowness and birefringence, from 6FDA, ODPA and CHDA It is preferable to use in combination with at least one selected from the group consisting of high chemical resistance, residual stress reduction, yellowness reduction, birefringence reduction, and total light transmittance improvement. .
- the resin precursor in the first embodiment may be a polyamideimide precursor by using a dicarboxylic acid in addition to the above-described tetracarboxylic dianhydride as long as the performance is not impaired.
- a dicarboxylic acid in addition to the above-described tetracarboxylic dianhydride as long as the performance is not impaired.
- dicarboxylic acids include dicarboxylic acids having an aromatic ring and alicyclic dicarboxylic acids.
- it is preferably at least one compound selected from the group consisting of aromatic dicarboxylic acids having 8 to 36 carbon atoms and alicyclic dicarboxylic acids having 6 to 34 carbon atoms.
- the number of carbons herein includes the number of carbons contained in the carboxyl group. Of these, dicarboxylic acids having an aromatic ring are preferred.
- terephthalic acid is particularly preferable from the viewpoint of reducing the YI value and improving the Tg.
- dicarboxylic acid is used together with tetracarboxylic dianhydride, it is obtained that the dicarboxylic acid is 50 mol% or less with respect to the total number of moles of the total of dicarboxylic acid and tetracarboxylic dianhydride. It is preferable from the viewpoint of chemical resistance in the film.
- ⁇ Diamine> Resin precursor according to the first aspect, as the diamine directing X 2, specifically, for example, 4,4- (diaminodiphenyl) sulfone (hereinafter also referred to as 4, 4-DAS), 3,4-( Diaminodiphenyl) sulfone and 3,3- (diaminodiphenyl) sulfone (hereinafter also referred to as 3,3-DAS), 2,2′-bis (trifluoromethyl) benzidine (hereinafter also referred to as TFMB), 2,2 ′ -Dimethyl 4,4'-diaminobiphenyl (hereinafter also referred to as m-TB), 1,4-diaminobenzene (hereinafter also referred to as p-PD), 1,3-diaminobenzene (hereinafter also referred to as m-PD), 4 -Aminophenyl 4'-aminobenzoate (hereinafter also referred to as
- the number average molecular weight of the resin precursor according to the first embodiment is preferably 3,000 to 1,000,000, more preferably 5,000 to 500,000, still more preferably 7,000 to 300,000. 000, particularly preferably 10,000 to 250,000.
- the molecular weight is preferably 3,000 or more from the viewpoint of obtaining good heat resistance and strength (for example, high elongation), and is 1,000,000 or less to obtain good solubility in a solvent. From the viewpoint, it is preferable from the viewpoint that coating can be performed without bleeding at a desired film thickness at the time of processing such as coating. From the viewpoint of obtaining a high mechanical elongation, the molecular weight is preferably 50,000 or more.
- the number average molecular weight is a value determined by standard polystyrene conversion using gel permeation chromatography.
- the resin precursor according to the first aspect may be partially imidized.
- the imidation of the resin precursor can be performed by known chemical imidization or thermal imidization. Of these, thermal imidization is preferred.
- the imidization rate can be controlled by controlling the heating temperature and the heating time. By performing partial imidization, the viscosity stability of the resin composition when stored at room temperature can be improved.
- the range of the imidization rate is preferably 5% to 70% from the viewpoint of solubility in a solution and storage stability.
- N, N-dimethylformamide dimethyl acetal, N, N-dimethylformamide diethyl acetal or the like may be added to the above resin precursor and heated to esterify part or all of the carboxylic acid.
- the (b) organic solvent in the first embodiment is the same as the (b) organic solvent in the second embodiment described later.
- the alkoxysilane compound (d) according to the first embodiment has an absorbance at 308 nm of 0.1 to 0.5 at a thickness of 1 cm when the 0.001 wt% NMP solution is used. If this requirement is satisfied, the structure is not particularly limited. When the absorbance is within this range, the obtained resin film can be easily peeled off while maintaining high transparency.
- the alkoxysilane compound is, for example, Reaction of an acid dianhydride with a trialkoxysilane compound, Reaction of an acid anhydride with a trialkoxysilane compound, It can be synthesized by a reaction between an amino compound and an isocyanate trialkoxysilane compound.
- the acid dianhydride, acid anhydride, and amino compound each preferably have an aromatic ring (particularly a benzene ring).
- the alkoxysilane compound according to the first aspect is represented by the following general formula (1) from the viewpoint of adhesiveness: ⁇ In the formula, R represents a single bond, an oxygen atom, a sulfur atom, or an alkylene group having 1 to 5 carbon atoms. ⁇ It is preferable that it is a compound obtained by making the acid dianhydride represented by and an amino trialkoxysilane compound react.
- reaction of the acid dianhydride and aminotrialkoxysilane in the first embodiment for example, 1 mol of acid dianhydride is added to a solution obtained by dissolving 2 mol of aminotrialkoxysilane in an appropriate solvent.
- the reaction can be carried out at a reaction temperature of preferably 0 ° C. to 50 ° C., preferably for a reaction time of 0.5 to 8 hours.
- the solvent is not limited as long as the raw material compound and the product are dissolved.
- the alkoxysilane compound according to the first embodiment has the following general formulas (2) to (4) from the viewpoint of transparency, adhesiveness, and peelability: It is preferable that it is at least one selected from the group consisting of the compounds represented by each of the above.
- the content of the (d) alkoxysilane compound in the resin composition according to the first aspect can be appropriately designed as long as sufficient adhesiveness and peelability are exhibited.
- a preferable range is (d) a range of 0.01 to 20% by mass of the alkoxysilane compound with respect to 100% by mass of the polyimide precursor.
- the content of the (d) alkoxysilane compound is more preferably 0.02 to 15% by mass, still more preferably 0.05 to 10% by mass, based on (a) the polyimide precursor. It is particularly preferably 1 to 8% by mass.
- the resin composition provided by the second aspect of the present invention is: (a) contains a polyimide precursor and (b) an organic solvent.
- a polyimide precursor contains a polyimide precursor and (b) an organic solvent.
- each component will be described in order.
- the polyimide precursor in this embodiment is a copolymer having a structural unit represented by the following formulas (5) and (6), or a polyimide precursor having a structural unit represented by the formula (5), and the formula It is a mixture of polyimide precursors having the structural unit represented by (2).
- the polyimide precursor in this embodiment is characterized in that the content of polyimide precursor molecules having a molecular weight of less than 1,000 is less than 5% by mass of the whole (a) polyimide precursor.
- the ratio (molar ratio) of the structural units (5) and (6) of the copolymer is the coefficient of thermal expansion (hereinafter also referred to as CTE), residual stress, yellowness (hereinafter referred to as YI) of the obtained cured product.
- CTE coefficient of thermal expansion
- YI yellowness
- the ratio of the above formulas (5) and (6) can be obtained from the result of 1H-NMR spectrum, for example.
- the copolymer may be a block copolymer or a random copolymer.
- the polyimide precursor (copolymer) of the present invention comprises pyromellitic dianhydride (hereinafter also referred to as PMDA), 4,4 ′-(hexafluoroisopropylidene) diphthalic anhydride (hereinafter also referred to as 6FDA) and 2,2′-bis (trifluoromethyl) benzidine (hereinafter also referred to as TFMB). That is, the structural unit (5) is formed by polymerization of PMDA and TMFB, and the structural unit (6) is formed by polymerization of 6FDA and TFMB. By using PMDA, it is considered that the obtained cured product exhibits good heat resistance and can reduce the residual stress.
- PMDA pyromellitic dianhydride
- 6FDA 4,4 ′-(hexafluoroisopropylidene) diphthalic anhydride
- TFMB 2,2′-bis (trifluoromethyl) benzidine
- the obtained cured product exhibits good transparency, has high transmittance, and can reduce YI.
- said raw material tetracarboxylic acid (PMDA, 6FDA) although these acid anhydrides are used normally, these acids or these other derivatives can also be used.
- curing material obtained can express favorable heat resistance and transparency by using TFMB.
- the ratio of the structural units (5) and (6) can be adjusted by changing the ratio of PMDA and 6FDA, which are tetracarboxylic acids.
- the polyimide precursor (mixture) of the present invention can be obtained by mixing a polymer of PMDA and TFMB and a polymer of 6FDA and TFMB. That is, the polymer of PMDA and TFMB has a structural unit (5), and the polymer of 6FDA and TFMB has a structural unit (6).
- the total mass of the structural units (5) and (6) is 30% by mass or more based on the total mass of the resin. From the viewpoint of low residual stress, 70 mass% or more is preferable from the viewpoint of low CTE. Most preferably, it is 100 mass%.
- the resin precursor which concerns on this Embodiment may further contain the structural unit (8) which has a structure represented by following General formula (8) in the range which does not impair performance as needed. .
- the structural unit (8) has a structure other than the polyimide precursor derived from acid dianhydride: PMDA and / or 6FDA and diamine: TFMB.
- R 1 is preferably a hydrogen atom.
- X 3 is preferably a divalent aromatic group or an alicyclic group from the viewpoints of heat resistance, YI value reduction, and total light transmittance.
- X 4 is preferably a divalent aromatic group or alicyclic group from the viewpoints of heat resistance, YI value reduction, and total light transmittance.
- the organic groups X 1 , X 2 and X 4 may be the same or different from each other.
- the mass ratio of the structural unit (8) in the resin precursor according to the present embodiment is 80% by mass or less, preferably 70% by mass or less, based on the total resin structure. This is preferable from the viewpoint of lowering the dependency.
- the molecular weight of the polyamic acid (polyimide precursor) of the present invention is preferably 10,000 to 500,000, more preferably 10,000 to 300,000, and particularly preferably 20,000 to 200,000 in terms of weight average molecular weight. If the weight average molecular weight is less than 10,000, cracks may occur in the resin film in the step of heating the applied resin composition, and even if it can be formed, the mechanical properties may be poor.
- the weight average molecular weight is a value determined in terms of standard polystyrene using gel permeation chromatography.
- the number average molecular weight of the polyimide resin precursor according to the present embodiment is preferably 3000 to 1000000, more preferably 5000 to 500000, still more preferably 7000 to 300000, and particularly preferably 10,000 to 250,000.
- the molecular weight is preferably 3000 or more from the viewpoint of obtaining good heat resistance and strength (for example, high elongation), and 1000000 or less is preferred from the viewpoint of obtaining good solubility in a solvent, coating and the like. It is preferable from the viewpoint that coating can be performed without bleeding at a desired film thickness during processing. From the viewpoint of obtaining high mechanical elongation, the molecular weight is preferably 50,000 or more. In the present disclosure, the number average molecular weight is a value determined in terms of standard polystyrene using gel permeation chromatography.
- the resin precursor may be partially imidized.
- the content of polyimide precursor molecules having a molecular weight of less than 1,000 with respect to the total amount of the polyimide precursor was measured by gel permeation chromatography (hereinafter also referred to as GPC) using a solution in which the polyimide precursor was dissolved. It can be calculated from the peak area.
- GPC gel permeation chromatography
- the water content of the solvent includes the grade of solvent used (dehydration grade or general-purpose grade, etc.), solvent container (bottle, 18L can, canister can, etc.), solvent storage state (noble gas sealed or not, etc.) ), Time from opening to use (use immediately after opening, use after aging after opening, etc.), etc., are considered to be involved. It is also considered that the rare gas replacement in the reactor before synthesis, the presence or absence of inflow of rare gas during synthesis, and the like are also involved.
- the content of the polyimide precursor molecule having a molecular weight of less than 1,000 is determined from the viewpoint of the residual stress of the polyimide resin film obtained by curing the resin composition using the polyimide precursor and the haze of the inorganic film formed on the polyimide resin film.
- the content of the polyimide precursor is preferably less than 5%, more preferably less than 1%. The reason why these items are good when the content of molecules having a molecular weight of less than 1,000 is in the above range is unclear, but it is considered that low molecular components are involved.
- the moisture content of the resin composition concerning implementation of this invention is 3000 ppm or less, It is characterized by the above-mentioned.
- the water content of the resin composition is preferably 3000 ppm or less, more preferably 1000 ppm or less, and even more preferably 500 ppm or less from the viewpoint of viscosity stability during storage of the resin composition. The reason why this item is good when the water content of the resin composition is within the above range is unclear, but it is considered that the water is involved in the decomposition and recombination of the polyimide precursor.
- the resin precursor of this embodiment can form a polyimide resin having a residual stress of 10 ⁇ m and a thickness of 20 MPa or less, it can be easily applied to a display manufacturing process including a TFT element device on a colorless transparent polyimide substrate. .
- the polyimide precursor (polyamic acid) of the present invention can be synthesized by a conventionally known synthesis method. For example, after a predetermined amount of TFMB is dissolved in a solvent, PMDA and 6FDA are respectively added to the obtained diamine solution and stirred. When dissolving each monomer component, you may heat as needed.
- the reaction temperature is preferably ⁇ 30 to 200 ° C., more preferably 20 to 180 ° C., and particularly preferably 30 to 100 ° C. Stirring is continued at room temperature (20 to 25 ° C.) or at an appropriate reaction temperature, and the end point of the reaction is confirmed by GPC to have reached the desired molecular weight.
- the above reaction can usually be completed in 3 to 100 hours.
- N, N-dimethylformamide dimethyl acetal or N, N-dimethylformamide diethyl acetal to the polyamic acid as described above and heating, by esterifying a part or all of the carboxylic acid, The viscosity stability of the solution containing the resin precursor and the solvent during storage at room temperature can also be improved.
- the above-mentioned tetracarboxylic acid anhydride is previously reacted with one equivalent of monohydric alcohol with respect to the acid anhydride group, and then a dehydrating condensing agent such as thionyl chloride or dicyclohexylcarbodiimide After the reaction, it can also be obtained by a condensation reaction with diamine.
- a solvent of the said reaction if a solvent which can melt
- examples of the aprotic solvent include N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), N-methylcaprolactam, 1, 3-dimethylimidazolidinone, tetramethylurea, ecamide M100 (trade name: manufactured by Idemitsu Kosan Co., Ltd.) and ecamide B100 (trade name: manufactured by Idemitsu Kosan Co., Ltd.) represented by the following general formula (7)
- Amide solvents such as lactones; Lactone solvents such as ⁇ -butyrolactone and ⁇ -valerolactone; Phosphorus-containing amide solvents such as hexamethylphosphoric amide and hexamethylphosphine triamide; Sulfur solvents; ketone solvents such as cyclohexanone and methylcyclohexanone; tertiary amine solvents such as picoline and pyridine; ester solvents such as acetic acid (2-methoxy-1-methylethyl).
- phenol solvents examples include phenol, O-cresol, m-cresol, p-cresol, 2,3-xylenol, 2,4-xylenol, 2,5- Examples include xylenol, 2,6-xylenol, 3,4-xylenol, and 3,5-xylenol.
- Ether and glycol solvents include 1,2-dimethoxyethane, bis (2-methoxyethyl) ether, 1,2-bis (2-methoxyethoxy) ethane, bis [2- (2- Methoxyethoxy) ethyl] ether, tetrahydrofuran, 1,4-dioxane and the like.
- the boiling point at normal pressure is preferably 60 to 300 ° C, more preferably 140 to 280 ° C, and particularly preferably 170 to 270 ° C.
- the boiling point of the organic solvent is preferably 170 to 270 ° C.
- the vapor pressure at 20 ° C. is preferably 250 Pa or less from the viewpoints of solubility and edge repelling during coating. More specifically, N-methyl-2-pyrrolidone, ⁇ -butyrolactone, the ecamide M100, ecamide B100, and the like can be mentioned. These reaction solvents may be used alone or in combination of two or more.
- the polyimide precursor (polyamic acid) of the present invention is usually obtained as a solution using the reaction solvent as a solvent (hereinafter also referred to as a polyamic acid solution).
- the ratio of the polyamic acid component (resin non-volatile content: hereinafter referred to as solute) to the total amount of the obtained polyamic acid solution is preferably 5 to 60% by mass, more preferably 10 to 50% by mass from the viewpoint of coating film formation. 10 to 40% by mass is particularly preferable.
- the solution viscosity of the polyamic acid solution is preferably 500 to 200,000 mPa ⁇ s at 25 ° C., more preferably 2000 to 100,000 mPa ⁇ s, and particularly preferably 3000 to 30,000 mPa ⁇ s.
- the solution viscosity can be measured using an E-type viscometer (VISCONICEHD manufactured by Toki Sangyo Co., Ltd.).
- E-type viscometer VISCONICEHD manufactured by Toki Sangyo Co., Ltd.
- the polyimide of this invention is obtained by heating the said polyimide precursor and carrying out dehydration ring closure.
- ⁇ Resin composition> Another aspect of the present invention provides a resin composition containing the aforementioned (a) polyimide precursor and (b) an organic solvent.
- the resin composition is typically a varnish.
- Organic solvent The (b) organic solvent is not particularly limited as long as it can dissolve the polyimide precursor (polyamic acid) of the present invention. Such (b) organic solvent is used at the time of synthesizing the (a) polyimide precursor. Solvents that can be used can be used.
- the organic solvent may be the same as or different from the solvent used in the synthesis of (a) polyamic acid.
- the component (b) is preferably in such an amount that the solid content concentration of the resin composition is 3 to 50% by mass.
- the viscosity (25 ° C.) of the resin composition is preferably adjusted so as to be 500 mPa ⁇ s to 100,000 mPa ⁇ s.
- the resin composition according to the present embodiment is excellent in storage stability at room temperature, and the viscosity change rate of the varnish when stored for 2 weeks at room temperature is 10% or less with respect to the initial viscosity. If the storage stability at room temperature is excellent, frozen storage becomes unnecessary and handling becomes easy.
- the resin composition of the present invention may contain an alkoxysilane compound, a surfactant, a leveling agent or the like in addition to the components (a) and (b).
- Alkoxysilane compound In order for the polyimide obtained from the resin composition according to the present embodiment to have sufficient adhesion to a support in a manufacturing process such as a flexible device, the resin composition has a polyimide precursor of 100 mass. % Can contain 0.01 to 20% by mass of the alkoxysilane compound.
- the content of the alkoxysilane compound with respect to 100% by mass of the polyimide precursor is 0.01% by mass or more, good adhesion to the support can be obtained.
- the content of the alkoxysilane compound is more preferably 0.02 to 15% by mass, further preferably 0.05 to 10% by mass, and more preferably 0.1 to 8% by mass with respect to the polyimide precursor.
- the coating properties of the resin composition are improved, and the YI value of the cured film obtained is dependent on the oxygen concentration during curing. Can be reduced.
- alkoxysilane compound examples include 3-mercaptopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd .: trade name: KBM803, manufactured by Chisso Corporation: trade name: Silaace S810), 3-mercaptopropyltriethoxysilane (manufactured by Asmax Co., Ltd .: Trade name: SIM6475.0), 3-mercaptopropylmethyldimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd .: trade name: LS1375, manufactured by Azumax Co., Ltd .: trade name: SIM6474.0), mercaptomethyltrimethoxysilane (manufactured by Azumax Corporation: product Name: SIM6473.5C), mercaptomethylmethyldimethoxysilane (manufactured by Azmax Co., Ltd .: trade name: SIM6473.0), 3-mercaptopropyldiethoxyme
- N- (3-trimethoxysilylpropyl) urea (manufactured by Azmax Co., Ltd .: trade name SIU9058.0), N- (3-diethoxymethoxysilylpropyl) urea, N- (3-ethoxydimethoxysilylpropyl) Urea, N- (3-tripropoxysilylpropyl) urea, N- (3-diethoxypropoxysilylpropyl) urea, N- (3-ethoxydipropoxysilylpropyl) urea, N- (3-dimethoxypropoxysilylpropyl) urea Urea, N- (3-Me Toxidipropoxysilylpropyl) urea, N- (3-trimethoxysilylethyl) urea, N- (3-ethoxydimethoxysilylethyl) urea, N- (3-tripropoxysilylethyl) urea, N- (3- (3-
- the storage stability of the resin composition is mentioned above from the viewpoint of the coating properties of the resin composition (inhibition of streaks) and the influence on the YI value and the total light transmittance due to the oxygen concentration during the curing process.
- phenylsilanetriol trimethoxyphenylsilane, trimethoxy (p-tolyl) silane, diphenylsilanediol, dimethoxydiphenylsilane, diethoxydiphenylsilane, dimethoxydi-p-tolylsilane, triphenylsilanol and each of the following structures 1 or more types selected from the alkoxysilane compounds represented by these are preferable.
- a surfactant or leveling agent Moreover, applicability
- paintability can be improved by adding surfactant or a leveling agent to a resin composition. Specifically, the generation of streaks after application can be prevented.
- a surfactant or leveling agent Silicone surfactants: organosiloxane polymers KF-640, 642, 643, KP341, X-70-092, X-70-093, KBM303, KBM403, KBM803 (above, trade name, manufactured by Shin-Etsu Chemical Co., Ltd.), SH -28PA, SH-190, SH-193, SZ-6032, SF-8428, DC-57, DC-190 (above, trade name, manufactured by Toray Dow Corning Silicone), SILWET L-77, L-7001 , FZ-2105, FZ-2120, FZ-2154, FZ-2164, FZ-2166, L-7604 (trade name, manufactured by Nihon Unicar), DBE-814, DBE-224, DBE-621
- Fluorosurfactants Megafac F171, F173, R-08 (Dainippon Ink Chemical Co., Ltd., trade name), Florard FC4430, FC4432 (Sumitomo 3M Limited, trade name), etc.
- Other nonionic surfactants polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, and the like.
- silicone-based surfactants and fluorine-based surfactants are preferable, and the YI value and total light transmission depending on the oxygen concentration during the curing process. From the viewpoint of influence on the rate, a silicone-based surfactant is preferable.
- the total amount is preferably 0.001 to 5 parts by mass, and 0.01 to 3 parts by mass with respect to 100 parts by mass of the polyimide precursor in the resin composition. More preferred.
- the solution may be heated at 130 to 200 ° C. for 5 minutes to 2 hours to partially dehydrate and imidize the polymer to such an extent that the polymer does not precipitate.
- the imidization rate can be controlled by controlling the temperature and time. By performing partial imidization, the viscosity stability of the resin precursor solution during storage at room temperature can be improved.
- the range of the imidization rate is preferably 5% to 70% from the viewpoint of the solubility of the resin precursor in the solution and the storage stability of the solution.
- the method for producing the resin composition of the present invention is not particularly limited. For example, when the solvent used when synthesizing (a) polyamic acid and (b) the organic solvent are the same, the resin composition was synthesized.
- the resin composition of the present invention can be used to form a transparent substrate of a display device such as a liquid crystal display, an organic electroluminescence display, a field emission display, or electronic paper. Specifically, it can be used for forming a thin film transistor (TFT) substrate, a color filter substrate, a transparent conductive film (ITO, Indium Thin Oxide) substrate, and the like.
- TFT thin film transistor
- ITO Indium Thin Oxide
- the resin composition has the following characteristics.
- the residual stress with the support indicated by the polyimide obtained by imidizing the polyimide precursor contained in the resin composition is ⁇ 5 MPa or more and 10 MPa or less.
- the alkoxysilane compound contained in the resin composition of the first aspect has an absorbance at 308 nm of 0.11% or more and 0.5 or less at a thickness of 1 cm when the NMP solution is 0.001% by mass. It is.
- the resin composition is heated at 300 ° C. to 550 ° C.
- the yellowness at a film thickness of 15 ⁇ m shown by the resin obtained by imidizing the resin precursor contained in the resin composition is 14 or less.
- the resin composition is heated at 300 ° C. to 500 ° C. under a nitrogen atmosphere (or by heating at 380 ° C. under a nitrogen atmosphere). Residual stress exhibited by a resin obtained by imidizing a resin precursor contained in the composition is 25 MPa or less.
- Another aspect of the present invention provides a resin film that is a cured product of the aforementioned resin precursor, a cured product of the aforementioned precursor mixture, or a cured product of the aforementioned resin composition.
- Another aspect of the present invention includes a step of applying the above-described resin composition on the surface of a support; Drying the applied resin film and removing the solvent; Heating the support and the resin composition to imidize a resin precursor contained in the resin composition to form a resin film; Peeling the resin film from the support; The manufacturing method of the resin film containing is provided.
- a polyamic acid solution obtained by dissolving and reacting an acid dianhydride component and a diamine component in an organic solvent can be used as the resin composition.
- the support is not particularly limited as long as it has heat resistance at the drying temperature in the subsequent steps and has good peelability.
- a substrate made of glass for example, alkali-free glass
- a silicon wafer or the like a support made of PET (polyethylene terephthalate), OPP (stretched polypropylene) or the like can be mentioned.
- film-like polyimide moldings include coatings made of glass or silicon wafers, and film- and sheet-like polyimide moldings such as PET (polyethylene terephthalate) and OPP (stretched polypropylene). Is mentioned.
- substrates include glass substrates, metal substrates such as stainless steel, alumina, copper, nickel, polyethylene glycol terephthalate, polyethylene glycol naphthalate, polycarbonate, polyimide, polyamideimide, polyetherimide, polyetheretherketone, polyethersulfone, A resin substrate such as polyphenylene sulfone or polyphenylene sulfide is used.
- metal substrates such as stainless steel, alumina, copper, nickel, polyethylene glycol terephthalate, polyethylene glycol naphthalate, polycarbonate, polyimide, polyamideimide, polyetherimide, polyetheretherketone, polyethersulfone,
- a resin substrate such as polyphenylene sulfone or polyphenylene sulfide is used.
- the resin composition described above is applied and dried on the adhesive layer formed on the main surface of the inorganic substrate, and cured at a temperature of 300 to 500 ° C. in an inert atmosphere, to obtain a resin.
- a film can be formed.
- the resin film is peeled from the support.
- a coating method for example, a doctor blade knife coater, an air knife coater, a roll coater, a rotary coater, a flow coater, a die coater, a bar coater, and other coating methods, spin coating, spray coating, dip coating, and the like
- Printing techniques represented by screen printing and gravure printing can also be applied.
- the coating thickness of the resin composition of the present invention is appropriately adjusted depending on the desired thickness of the molded article and the ratio of the resin non-volatile component in the resin composition, but is usually about 1 to 1000 ⁇ m.
- a resin non-volatile component is calculated
- the coating step is usually performed at room temperature, but the resin composition may be heated in the range of 40 to 80 ° C. for the purpose of reducing the viscosity and improving workability.
- a drying process is performed.
- the drying step is performed for the purpose of removing the organic solvent.
- the drying process can utilize a device such as a hot plate, a box-type dryer or a conveyor-type dryer, and is preferably performed at 80 to 200 ° C, more preferably at 100 to 150 ° C.
- the heating step is a step of removing the organic solvent remaining in the resin film during the drying step and advancing the imidization reaction of the polyamic acid in the resin composition to obtain a cured film.
- a heating process is performed using apparatuses, such as an inert gas oven, a hotplate, a box type dryer, and a conveyor type dryer. This step may be performed simultaneously with the drying step or sequentially.
- an air atmosphere may be sufficient as a heating process, it is recommended to perform in an inert gas atmosphere from a viewpoint of safety
- the inert gas include nitrogen and argon.
- the heating temperature is preferably 250 ° C.
- the heating time is usually about 0.5 to 3 hours.
- the oxygen concentration in the heating step is preferably 2000 ppm or less, more preferably 100 ppm or less, and further preferably 10 ppm or less from the viewpoint of the transparency of the obtained cured product and the YI value. By setting the oxygen concentration to 2000 ppm or less, the YI value of the obtained cured product can be made 15 or less.
- the peeling process which peels a cured film from a support body after a heating process is needed.
- This peeling step is performed after the molded body on the substrate is cooled to room temperature to about 50 ° C.
- the peeling process includes the following. (1) A method in which a polyimide resin film / support-containing composition is obtained by the above method, and then the polyimide resin interface is ablated by irradiating a laser from the support side, thereby peeling the polyimide resin.
- the release layer examples include parylene (registered trademark, manufactured by Japan Parylene Godo Kaisha), a method using tungsten oxide, a method using a vegetable oil-based, silicone-based, fluorine-based, alkyd-based release agent, and the like ( In some cases, it may be used in combination with the laser irradiation of 1) (see JP-A 2010-67957, JP-A 2013-179306, etc.).
- (3) A method of obtaining a polyimide resin film by obtaining a structure including a polyimide resin film / support using a metal that can be etched as a support, and then etching the metal with an etchant.
- Examples of the metal include copper (specifically, electrolytic copper foil “DFF” manufactured by Mitsui Mining & Smelting Co., Ltd.), aluminum, and the like.
- Examples of the etchant include copper: ferric chloride, aluminum: dilute hydrochloric acid, and the like.
- (1) and (2) are appropriate from the viewpoint of the refractive index difference, YI value, and elongation of the obtained polyimide resin film, and the refractive index of the obtained polyimide resin film. From the viewpoint of the difference, (1) is more appropriate.
- the YI value of the resulting polyimide resin film is large and the elongation is small, but this is thought to be due to some involvement of copper ions. It is done.
- the thickness of the resin film (cured product) according to the present embodiment is not particularly limited, but is preferably in the range of 5 to 200 ⁇ m, more preferably 10 to 100 ⁇ m.
- the resin film according to the present embodiment preferably has a residual stress of ⁇ 5 MPa or more and 10 MPa or less with the support.
- the yellowness is preferably 15 or less at a film thickness of 10 ⁇ m.
- the absorbance at 308 nm of the alkoxysilane compound contained in the resin composition of the first aspect in a 0.001% by mass NMP solution is 0.1 or more at a thickness of 1 cm of the solution, By setting it to 0.5 or less, it is realized well.
- the resulting resin film can facilitate laser peeling while maintaining high transparency.
- the resin film according to the second embodiment preferably has a yellowness of 14 or less at a film thickness of 15 ⁇ m.
- the residual stress is preferably 25 MPa or less.
- the yellowness at a film thickness of 15 ⁇ m is 14 or less and the residual stress is 25 MPa or less.
- Such characteristics are improved, for example, by imidizing the resin precursor of the present disclosure in a nitrogen atmosphere, more preferably at an oxygen concentration of 2000 ppm or less, at 300 ° C. to 550 ° C., and more particularly at 380 ° C. Realized.
- ⁇ Laminate> Another aspect of the present invention provides a laminate comprising a support and a polyimide resin film formed on the surface of the support, which is a cured product of the resin composition described above. Moreover, another aspect of the present invention includes a step of applying the above-described resin composition on the surface of the support, The support and the resin composition are heated to imidize the resin precursor contained in the resin composition to form a polyimide resin film, thereby obtaining a laminate including the support and the polyimide resin film. Process, The manufacturing method of a laminated body containing is provided. Such a laminate can be produced, for example, by not peeling off a polyimide resin film formed in the same manner as in the resin film production method described above from the support.
- the resin precursor according to the present embodiment a resin composition containing the resin precursor having excellent storage stability and excellent coating properties can be produced.
- the yellowness (YI value) of the obtained polyimide resin film is less dependent on the oxygen concentration during curing.
- the residual stress is low. Therefore, the resin precursor is suitable for use on a transparent substrate of a flexible display.
- the resin film according to the present embodiment preferably has a residual stress between the resin film and the glass of 25 MPa or less.
- the polyimide resin film according to the present embodiment preferably has a yellowness of 14 or less with reference to a film thickness of 15 ⁇ m.
- the resin film according to the present embodiment is more preferably 30% or more in tensile elongation from the viewpoint of improving yield by being excellent in breaking strength when handling a flexible substrate.
- Another aspect of the present invention provides a polyimide resin film used for manufacturing a display substrate.
- the step of applying the resin composition on the support, the step of forming the polyimide resin film, and the step of peeling off the polyimide resin film are performed in the same manner as in the method for producing the resin film and laminate described above. be able to.
- the resin film according to the present embodiment satisfying the above-described physical properties is suitably used as an application whose use is restricted by the yellow color of the existing polyimide film, particularly as a colorless transparent substrate for flexible displays, a protective film for color filters, and the like.
- a protective film or a light-diffusing sheet and coating film for example, TFT-LCD interlayer, gate insulating film, and liquid crystal alignment film
- TFT-LCD interlayer, gate insulating film, and liquid crystal alignment film on TFT-LCD, touch panel ITO substrate, smartphone cover glass substitute resin It can also be used in fields requiring colorless and transparent and low birefringence such as substrates.
- the polyimide according to the present embodiment is applied as the liquid crystal alignment film, it contributes to an increase in aperture ratio, and a TFT-LCD with a high contrast ratio can be manufactured.
- the resin film and laminate produced using the resin precursor according to the present embodiment are particularly suitable as a substrate for the production of, for example, semiconductor insulation films, TFT-LCD insulation films, electrode protection films, and flexible devices.
- the flexible device include a flexible display, a flexible solar cell, a flexible touch panel electrode substrate, flexible illumination, and a flexible battery.
- the weight average molecular weight (Mw) and the number average molecular weight (Mn) were measured by gel permeation chromatography (GPC) under the following conditions.
- GPC gel permeation chromatography
- N N-dimethylformamide
- Mn number average molecular weight
- Purity 99.5% 63.2 mmol / L phosphoric acid
- a calibration curve for calculating the weight average molecular weight was prepared using standard polystyrene (manufactured by Tosoh Corporation).
- This alkoxysilane compound 1 was made into a 0.001% by mass NMP solution, filled in a quartz cell having a measurement thickness of 1 cm, and the absorbance measured by UV-1600 (manufactured by Shimadzu Corporation) was 0.13.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 170,000.
- the residual stress of P-18 was -1 MPa.
- P-19 was obtained in the same manner as in Example 1 except that the raw material charge was changed to 42.6 mmol of PMDA and 7.4 mmol of TAHQ instead of 6FDA.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 175,000.
- the residual stress of P-19 was 1 MPa.
- P-20 was obtained in the same manner as in Example 1 except that the raw material charge was changed to 39.3 mmol PMDA and 10.7 mmol BPDA instead of 6FDA.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 175,000.
- the residual stress of P-20 was 2 MPa.
- Examples 28 to 31 and Comparative Examples 4 and 5 In a container, the above-mentioned solution P-1 (10 g) and the alkoxysilane compound of the type and amount shown in Table 1 were charged and stirred well to obtain a resin composition containing polyamic acid as a polyimide precursor. Prepared.
- Table 2 shows the adhesiveness, laser peelability, and YI (in terms of film thickness of 10 ⁇ m) measured by the methods described above or below for each resin composition part.
- Excimer laser (wavelength: 308 nm, repetition frequency: 300 Hz) is irradiated to a laminate having a 10 ⁇ m-thick polyimide film on an alkali-free glass obtained by the coating method and the curing method described above, and a 10 cm ⁇ 10 cm polyimide film The minimum energy required to peel the entire surface of the film was determined.
- the polyimide resin films of Examples 28 to 34 have high adhesiveness to the glass substrate and low energy when peeled. Further, no particles were generated during peeling.
- Comparative Example 4 containing no alkoxysilane compound the adhesiveness with the glass substrate is low, and the energy at the time of peeling is large. In addition, particles were generated during peeling.
- the polyimide resin film obtained from the resin composition according to the first aspect of the present invention is a resin film that has excellent adhesion to a glass substrate (support) and does not generate particles during laser peeling. Was confirmed.
- Example 2 Varnish P-2 was obtained in the same manner as in Example 1 except that the raw material charge was changed to 9.27 g (42.5 mmol) of PMDA and 3.33 g (7.5 mmol) of 6FDA.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 190,000.
- Example 3 Varnish P-3 was obtained in the same manner as in Example 1 except that the raw material charge was changed to 7.63 g (35.0 mmol) of PMDA and 6.66 g (15.0 mmol) of 6FDA.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 190,000.
- Example 6 The 500 ml separable flask was purged with nitrogen, and NMP (water content 250 ppm) immediately after opening the 18 L can was put into the separable flask in an amount corresponding to a solid content of 15 wt%, and 15.69 g (49.0 mmol) of TFMB was added. ) And stirred to dissolve TFMB. Thereafter, 10.91 g (50.0 mmol) of PMDA was added, and the mixture was stirred at 80 ° C. for 4 hours under a nitrogen flow to obtain varnish P-5a.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 180,000.
- the 500 ml separable flask was purged with nitrogen, and NMP (water content 250 ppm) immediately after opening the 18 L can was put into the separable flask in an amount corresponding to a solid content of 15 wt%, and 15.69 g (49 0.0 mmol) was added and stirred to dissolve the TFMB. Thereafter, 22.21 g (50.0 mmol) of 6FDA was added, and the mixture was stirred at 80 ° C. for 4 hours under a nitrogen flow to obtain varnish P-5b.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 200,000.
- varnishes P-5a and P-5b were weighed so as to have a weight ratio of 85:15, and the viscosity of the resin composition was adjusted to 5000 mPa ⁇ s by adding NMP to obtain varnish P-5. .
- Example 7 Varnish P-6 was obtained in the same manner as in Example 2 except that the synthetic solvent was changed to ⁇ -butyrolactone (GBL) (water content 280 ppm) immediately after opening the 18L can.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 180,000.
- Example 8 Varnish P-7 was obtained in the same manner as in Example 7, except that the synthetic solvent was changed to Ecamide M100 (product name, manufactured by Idemitsu) (water content 260 ppm) immediately after opening the 18 L can.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 190,000.
- Example 9 Varnish P-8 was obtained in the same manner as in Example 7 except that the synthetic solvent was changed to Ecamide B100 (product name, manufactured by Idemitsu) (water content 270 ppm) immediately after opening the 18 L can.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 190,000.
- Example 10 The experiment was carried out in the same manner as in Example 2 except that the initial separable flask was not replaced with nitrogen and the nitrogen flow during synthesis was not performed. 9 was obtained.
- the obtained polyamic acid had a weight average molecular weight (Mw) of 180,000.
- Example 11 Varnish P-10 was obtained in the same manner as in Example 10, except that the synthetic solvent was changed to NMP (general grade, not dehydrated grade) (water content 1120 ppm) immediately after opening the 500 ml bottle.
- the resulting polyamic acid had a weight average molecular weight (Mw) of 170,000.
- Example 12 Varnish P-11 was obtained in the same manner as in Example 10, except that the synthetic solvent was changed to GBL (general grade, not dehydrated grade) immediately after opening the 500 ml bottle (water content 1610 ppm).
- the obtained polyamic acid had a weight average molecular weight (Mw) of 160,000.
- Example 13 Varnish P-12 was obtained in the same manner as in Example 10, except that the synthetic solvent was changed to Ecamide M100 (general grade, not dehydrated grade) (water content 1250 ppm) immediately after opening the 500 ml bottle.
- the resulting polyamic acid had a weight average molecular weight (Mw) of 170,000.
- Example 14 Varnish P-13 was obtained in the same manner as in Example 10 except that the synthetic solvent was changed to DMAc immediately after opening the 500 ml bottle (general grade, not dehydrated grade) (water content 2300 ppm).
- the obtained polyamic acid had a weight average molecular weight (Mw) of 160,000.
- Viscosity measurement at 23 ° C. was performed using a sample obtained by allowing the resin composition prepared in each of the above Examples and Comparative Examples to stand at room temperature for 3 days. Thereafter, the sample that was allowed to stand at room temperature for 2 weeks was used as a sample after 2 weeks, and the viscosity was measured again at 23 ° C. Viscosity was measured using a viscometer with a temperature controller (TV-22 manufactured by Toki Sangyo Co., Ltd.). Using the above measured values, the viscosity change rate at room temperature for 4 weeks was calculated according to the following formula.
- ⁇ Coating property Evaluation of edge repellency> Using a bar coater on the alkali-free glass substrate (size 10 ⁇ 10 mm, thickness 0.7 mm), the resin composition prepared in each of the above Examples and Comparative Examples is cured to a film thickness of 15 ⁇ m. Coating was performed. And after leaving it to stand at room temperature for 5 hours, the degree of repelling of the coating edge was observed. The sum of the widths of the four sides of the coating film was calculated and evaluated according to the following criteria. A: The edge width (the sum of the four sides) of the coating edge is more than 0 and 5 mm or less (the edge repellent evaluation is “excellent”).
- the repel width (the sum of four sides) is more than 5 mm and not more than 15 mm (Evaluation of edge repellency is “good”)
- X The repellency width (sum of four sides) is more than 15 mm (edge repelling evaluation “impossible”)
- Residual stress is more than ⁇ 5 to 15 MPa or less (residual stress evaluation “excellent”)
- ⁇ Residual stress of more than 15 and 25 MPa or less (residual stress evaluation “good”)
- This wafer was immersed in a dilute hydrochloric acid aqueous solution, and the polyimide resin film was peeled off to obtain a resin film. Then, YI of the obtained polyimide resin film was measured using a D65 light source (Spectrophotometer: SE600) manufactured by Nippon Denshoku Industries Co., Ltd. Measured a film thickness of 15 ⁇ m).
- the laminate wafer obtained above was immersed in a dilute hydrochloric acid aqueous solution, and the two layers of the inorganic film and the polyimide film were integrally peeled from the wafer to obtain a polyimide film sample having an inorganic film formed on the surface.
- Haze was measured using an SC-3H type haze meter manufactured by Suga Test Instruments Co., Ltd. according to the JIS K7105 transparency test method. The measurement results were evaluated according to the following criteria.
- ⁇ Haze is more than 5 and 15 or less (Haze “good”)
- X Haze is more than 15 (Haze “bad”)
- Table 3 shows the results of evaluation for each item as described above.
- Example 15 In Examples 15 to 21 shown below, experiments were conducted on the oxygen concentration during heat curing and the method for removing the resin film.
- the polyimide precursor varnish P-2 obtained in Example 2 was coated on an alkali-free glass substrate (thickness 0.7 mm) using a bar coater. Subsequently, leveling was performed at room temperature for 5 to 10 minutes, and then heated in a hot air oven at 140 ° C. for 60 minutes to produce a glass substrate laminate on which a coating film was formed. The film thickness of the coating film was adjusted to 15 ⁇ m after curing.
- the oxygen concentration is adjusted to 10 ppm or less, and heat-curing treatment is performed at 380 ° C. for 60 minutes.
- a glass substrate laminate in which a polyimide film (polyimide resin film) was formed by imidization was produced. After the cured laminate was allowed to stand at room temperature for 24 hours, the polyimide film was peeled off from the glass substrate by the following method. That is, the laser beam was irradiated from the glass substrate side toward the polyimide film by the third harmonic (355 nm) of the Nd: Yag laser. The irradiation energy was increased stepwise and laser irradiation was performed with the minimum irradiation energy at which peeling was possible, and the polyimide film was peeled from the glass substrate to obtain a polyimide film.
- Example 16 instead of the glass substrate of Example 14, a glass substrate in which Parylene HT (registered trademark, manufactured by Japan Parylene LLC) was formed as a release layer on the glass substrate was used.
- the glass substrate on which Parylene HT was formed was produced by the following method.
- a parylene precursor (parylene dimer) was placed in a thermal evaporation apparatus, and a glass substrate (15 cm ⁇ 15 cm) covered with a hollow pad (8 cm ⁇ 8 cm) was placed in the sample chamber.
- the parylene precursor was vaporized at 150 ° C. in a vacuum, decomposed at 650 ° C., and then introduced into the sample chamber. And parylene was vapor-deposited on the area
- Example 15 the glass substrate in which the polyimide film / parylene HT was formed by the method similar to Example 15 was produced. Then, when the glass laminated body of the outer peripheral part of 8 cm x 8 cm in which parylene HT was not formed was cut, the polyimide film could be easily peeled from the glass substrate, and a polyimide film was obtained.
- Example 18 A polyimide film was prepared by referring to the methods described in the prior art, Patent Document 4, and Example 5. After producing a glass substrate on which a polyimide film obtained by the same method as in Example 15 was formed, an adhesive film (PET film 100 ⁇ m, adhesive 33 ⁇ m) was bonded to the surface of the polyimide film, and the polyimide film was attached from the glass substrate. After peeling, the polyimide film was separated from the adhesive film to obtain a polyimide film.
- PET film 100 ⁇ m, adhesive 33 ⁇ m adhesive to the surface of the polyimide film
- Example 19 A polyimide film was obtained in the same manner as in Example 15 except that the curing oxygen concentration was adjusted to 100 ppm among the experimental conditions of Example 15.
- Example 20 A polyimide film was obtained in the same manner as in Example 15 except that the curing oxygen concentration was adjusted to 2000 ppm among the experimental conditions of Example 15.
- Example 21 Of the experimental conditions of Example 15, except that the oxygen concentration during curing was adjusted to 5000 ppm, the same operation as in Example 15 was performed to obtain a polyimide film.
- YI value ⁇ Evaluation of yellowness (YI value)> YI values (converted to a film thickness of 15 ⁇ m) were measured for YI of the polyimide resin films obtained in Examples 15 to 21 using a D65 light source manufactured by Nippon Denshoku Industries Co., Ltd. (Spectrophotometer: SE600).
- the polyimide resin film obtained from the polyimide precursor according to the present invention has low yellowness, low residual stress, excellent mechanical properties, and further, the influence on the yellowness due to the oxygen concentration during curing. It was confirmed to be a small resin film.
- Example 22 In Examples 22 to 27 shown below, experiments were conducted on the effects of adding a surfactant and / or alkoxysilane to the polyimide precursor. Using the varnish of the polyimide precursor obtained in Example 2, the coating stripe and the yellowing degree (YI value) dependency on the oxygen concentration during curing were evaluated. [Example 22] The polyimide precursor varnish P-2 obtained in Example 2 was used.
- Example 24 In the polyimide precursor varnish obtained in Example 2, 0.025 parts by weight of the fluorosurfactant 2 (Megafac F171, product name, manufactured by DIC) is dissolved with respect to 100 parts by weight of the resin.
- the resin composition was prepared by filtering with a 0.1 ⁇ m filter.
- Example 26 In the varnish of the polyimide precursor obtained in Example 2, the alkoxysilane compound 2 represented by the following formula in terms of 0.5 parts by weight of the following structure is dissolved with respect to 100 parts by weight of the resin.
- the polyimide precursor resin composition was adjusted by filtering with a filter.
- A 0 continuous coating streaks with a width of 1 mm or more and a length of 1 mm or more (evaluation of coating streaks “excellent”)
- ⁇ One or two coating lines (evaluation of coating lines “good”)
- ⁇ 3-5 coating stripes (coating stripe evaluation “OK”)
- the YI values shown in Table 5 indicate the results (10 ppm / 100 ppm / 2000 ppm) when the oxygen concentration in the oven is adjusted to 10 ppm, 100 ppm, and 2,000 ppm, respectively.
- Table 5 As is apparent from Table 5, in Examples 23 to 27 in which the surfactant and / or alkoxysilane compound was added to the resin composition, compared with Example 21 in which the surfactant was not added, the streaks during application of the resin composition Is less than 2, and it was confirmed that the yellowing degree of the polyimide resin film had a low oxygen concentration dependency at the same time.
- the resin composition using the polyimide precursor according to the first aspect of the present invention is It contains an alkoxysilane compound having an absorbance at 308 nm of 0.1 to 0.5 when the 0.001 mass% NMP solution is used.
- the polyimide resin film obtained by curing the resin composition has a residual stress with the support of ⁇ 5 MPa or more and 10 MPa or less. From this result, the polyimide resin film obtained from the resin composition according to the first aspect of the present invention is excellent in adhesiveness with a glass substrate (support) and is a resin film that does not generate particles during laser peeling. confirmed.
- the resin composition using the polyimide precursor according to the second aspect of the present invention is: (1) Viscosity stability during storage is 10% or less. (2) Edge repelling during coating is simultaneously observed to be 15 mm or less.
- the polyimide resin film obtained by curing the resin composition is (3) Residual stress is 25 MPa or less (4) Yellowness is 14 or less (15 ⁇ m film thickness) (5) Simultaneously see that the inorganic film formed on the polyimide resin film has a Haze of 15 or less.
- the polyimide resin film is (6)
- the yellowness can be further reduced by setting the oxygen concentration during curing to 2,000, 100, 10 ppm, (7)
- the low refractive index difference and low yellowness of the resin film can be satisfied by laser peeling and / or a peeling method using a peeling layer.
- the number of streaks during coating of the resin composition is 2 or less, (9)
- the yellowing degree of the polyimide resin film has a low oxygen concentration dependency upon curing.
- the polyimide resin film obtained from the polyimide precursor according to the present invention has a low yellowness, a low residual stress, excellent mechanical properties, and a small influence on the yellowness due to the oxygen concentration during curing. It was confirmed to be a resin film.
- the present invention can be suitably used, for example, as a substrate for manufacturing semiconductor insulating films, TFT-LCD insulating films, electrode protective films, flexible displays, touch panel ITO electrode substrates, and the like.
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Abstract
Description
また、PMDA,6FDA及び、TFMBから得られるポリイミド樹脂は、光透過率、黄色度(YI値)と熱線膨張率(CTE)にすぐれ、LCD用材料としての適用可能であることが記載されている(特許文献2、3)。
そして、PMDA,6FDA及び、TFMBから得られるポリイミド樹脂は、ガスバリア膜(無機膜)とのCTEの差が小さく、前記ポリイミド樹脂膜上にガスバリア層を備えた表示装置が提案されている(特許文献4)。
また、ポリイミド前駆体と、アルコキシシラン化合物を有する樹脂組成物について、フレキシブルデバイス用途に用いる提案がされている(特許文献5)。
そして、特許文献3に記載されたポリイミド樹脂の場合、CTEは小さいものの、本発明者が確認したところ、実施例で使用している溶媒の場合、該ポリイミド樹脂を含む樹脂組成物の塗布性が悪いという課題があることが分かった(後述する比較例3)。
そして、特許文献4に記載されたポリイミド樹脂の場合、CTEは無機膜と同等であった。しかし、特許文献4に記載の、支持体からのポリイミド樹脂を剥離する方法は、本発明者が確認したところ、剥離後のポリイミドフィルムのYI値が大きい、伸度が小さい、表裏の屈折率差が大きいという課題があることが分かった(後述する比較例2)。
また、特許文献5に記載されたポリイミド樹脂とアルコキシシラン化合物では、残留応力の高いポリイミド樹脂が開示されている。本発明者らが検討したところでは、残留応力の高いポリマーの場合は、レーザー剥離によりポリイミドフィルムとガラス基板を剥離する際に要するエネルギーは低いが、残留応力の低いポリマーの場合には、要するエネルギーが高いために、レーザー剥離の際にパーティクルが生じるという課題があった。
残留応力の低いポリマーの場合でも、ガラス基板と良好な接着性を有し、かつレーザー剥離の際にパーティクルが発生しない樹脂組成物を提供することも目的とする。
本発明の第一の態様は、上記説明した問題点に鑑みてなされたものであり、ガラス基板との接着性に優れ、レーザー剥離の際にパーティクルを生じない、ポリイミド前駆体を含む樹脂組成物を提供することを目的とする。
保存安定性に優れ、塗工性に優れる、ポリイミド前駆体を含む樹脂組成物を提供することを目的とする。また本発明は、残留応力が低く、黄色度(YI値)が小さく、キュア工程(加熱硬化工程)時の酸素濃度によるYI値及び全光線透過率への影響が小さく、表裏の屈折率差が小さい、ポリイミド樹脂膜および樹脂フィルム及びその製造方法、積層体及びその製造方法、を提供することを目的とする。さらに本発明は、表裏で屈折率差が低く、黄色度が低いディスプレイ基板及びその製造方法を提供することを目的とする。
第一の態様では、ポリイミドとなった時に支持体と特定の範囲内の残留応力を生じるポリイミド前駆体と、308nmに特定の割合の吸光度を有するアルコキシシラン化合物が、ガラス基板(支持体)との接着性に優れ、かつレーザー剥離時にパーティクルを生じないことを見出し、
第二の態様では、特定構造のポリイミド前駆体を含む樹脂組成物は、保存安定性に優れ、塗工性に優れること;
当該組成物を硬化して得られるポリイミドフィルムは、残留応力が低く、黄色度(YI値)が小さく、キュア工程時の酸素濃度によるYI値及び全光線透過率への影響が小さいこと;
該ポリイミドフィルム上に形成した無機膜は、Hazeが小さいこと;並びに
支持体から該ポリイミド樹脂膜を剥離する方法として、レーザー剥離及び/または剥離層を用いることにより、樹脂膜表裏の低屈折率差、低YI値を満たすこと
を見出し、これらの知見に基づいて本発明をなすに至った。
すなわち、本発明は、以下の通りのものである。
(a)ポリイミド前駆体、(b)有機溶剤、及び(d)アルコキシシラン化合物と、を含有する樹脂組成物であって、
前記樹脂組成物を支持体の表面に塗布した後、前記(a)ポリイミド前駆体をイミド化して得られるポリイミドが示す、支持体との残留応力が-5MPa以上、10MPa以下であり、そして、
前記(d)アルコキシシラン化合物は、0.001質量%のNMP溶液とした時の308nmの吸光度が、溶液の厚さ1cmにおいて0.1以上、0.5以下である、樹脂組成物。
[2]
前記(d)アルコキシシラン化合物が、
下記一般式(1):
アミノトリアルコキシシラン化合物と、
を反応させて得られる化合物である、[1]に記載の樹脂組成物。
[3]
前記(d)アルコキシシラン化合物が、下記一般式(2)~(4):
[4]
前記(a)ポリイミド前駆体が、下記式(5):
[5]
前記(a)ポリイミド前駆体において、前記式(5)で示される構造単位と、前記式(6)で示される構造単位とのモル比が、90/10~50/50である、[1]~[4]のいずれかに記載の樹脂組成物。
[6]
(a)ポリイミド前駆体と、(b)有機溶剤を含有する樹脂組成物であって、
前記(a)ポリイミド前駆体が、下記式(5):
[7]
前記(a)ポリイミド前駆体の分子量1,000未満の分子の含有量が1質量%未満である、[6]に記載の樹脂組成物。
[8]
前記(a)ポリイミド前駆体において、前記式(5)で示される構造単位と、式(6)で示される構造単位とのモル比が、90/10~50/50である、[6]または[7]に記載の樹脂組成物。
[9]
(a)ポリイミド前駆体と、(b)有機溶剤を含有する樹脂組成物であって、
前記(a)ポリイミド前駆体が、下記式(5):
[10]
前記式(5) で示される構造単位を有するポリイミド前駆体と、前記式(6) で示される構造単位を有するポリイミド前駆体との重量比が90/10~50/50である、[9]に記載の樹脂組成物。
[11]
水分量が3000ppm以下である、[1]~[10]のいずれかに記載の樹脂組成物。
[12]
前記(b)有機溶剤が、沸点が170~270℃の有機溶剤である、[1]~[11]のいずれかに記載の樹脂組成物。
[13]
前記(b)有機溶剤が、20℃における蒸気圧が250Pa以下の有機溶剤である、[1]~[12]のいずれかに記載の樹脂組成物。
[14]
前記(b)有機溶剤が、N-メチル-2-ピロリドン、γ-ブチロラクトン、下記一般式(7):
で表される化合物からなる群から選択される少なくとも一種の有機溶剤である[12]または[13]に記載の樹脂組成物。
[15]
(c)界面活性剤をさらに含有する、[1]~[14]のいずれかに記載の樹脂組成物。
[16]
前記(c)界面活性剤が、フッ素系界面活性剤及びシリコーン系界面活性剤からなる群より選択される1種以上である、[15]に記載の樹脂組成物。
[17]
前記(c)界面活性剤が、シリコーン系界面活性剤である、[15]に記載の樹脂組成物。
[18]
(d)アルコキシシラン化合物をさらに含有する、[6]~[17]のいずれかに記載の樹脂組成物。
[19]
[1]~[18]のいずれかに記載の樹脂組成物を加熱して得られるポリイミド樹脂膜。
[20]
[19]に記載のポリイミド樹脂膜を含む、樹脂フィルム。
[21]
[1]~[18]のいずれかに記載の樹脂組成物を支持体の表面上に塗布する工程と、
塗布した樹脂組成物を乾燥し、溶媒を除去する工程と、
前記支持体及び前記樹脂組成物を加熱して該樹脂組成物に含まれる樹脂前駆体をイミド化してポリイミド樹脂膜を形成する工程と、
前記ポリイミド樹脂膜を該支持体から剥離する工程と、
を含む、樹脂フィルムの製造方法。
[22]
前記樹脂組成物を支持体の表面上に塗布する工程に先立って、前記支持体上に剥離層を形成する工程を含む、[21]に記載の樹脂フィルムの製造方法。
[23]
前記加熱しポリイミド樹脂膜を形成する工程において、酸素濃度が2000ppm以下である、[21]に記載の樹脂フィルムの製造方法。
[24]
前記加熱しポリイミド樹脂膜を形成する工程において、酸素濃度が100ppm以下である、[21]に記載の樹脂フィルムの製造方法。
[25]
前記加熱しポリイミド樹脂膜を形成する工程において、酸素濃度が10ppm以下である、[21]に記載の樹脂フィルムの製造方法。
[26]
前記ポリイミド樹脂膜を支持体から剥離する工程が、支持体側からレーザーを照射したのち剥離する工程を含む、[21]に記載の樹脂フィルムの製造方法。
[27]
前記素子または回路が形成されたポリイミド樹脂膜を支持体から剥離する工程が、該ポリイミド樹脂膜/剥離層/支持体を含む構成体から該ポリイミド樹脂膜を剥離する工程を含む、[21]に記載の樹脂フィルムの製造方法。
[28]
支持体と、該支持体の表面上に形成された、[6]~[19]のいずれかに記載の樹脂組成物の硬化物であるポリイミド樹脂膜とを含む、積層体。
[29]
[6]~[18]のいずれかに記載の樹脂組成物を支持体の表面上に塗布する工程と、
該支持体及び該樹脂組成物を加熱して該樹脂組成物に含まれる該樹脂前駆体をイミド化してポリイミド樹脂膜を形成する工程と、を含む、積層体の製造方法。
[30]
[6]~[18]のいずれかに記載の樹脂組成物を支持体に塗布、加熱しポリイミド樹脂膜を形成する工程と、
前記ポリイミド樹脂膜上に素子または回路を形成する工程と、
前記素子または回路が形成されたポリイミド樹脂膜を支持体から剥離する各工程と、
を含む、ディスプレイ基板の製造方法。
[31]
[30]に記載のディスプレイ基板の製造方法により形成された、ディスプレイ基板。
[32]
[19]記載のポリイミドフィルムと、SiNと、SiO2と、をこの順で積層してなる積層体。
したがって、第一の態様では、ガラス基板(支持体)との接着性に優れ、レーザー剥離時にパーティクルを生じない樹脂組成物を提供することができる。
第二の態様では、保存安定性に優れ、塗工性に優れる。また、当該組成物から得られるポリイミド樹脂膜および樹脂フィルムは、残留応力が低く、黄色度(YI値)が小さく、キュア工程時の酸素濃度によるYI値及び全光線透過率への影響が小さい。
したがって、本発明では、保存安定性に優れ、塗工性に優れる、ポリイミド前駆体を含む樹脂組成物を提供することができる。また本発明は、残留応力が低く、黄色度(YI値)が小さく、キュア工程(加熱硬化工程)時の酸素濃度によるYI値及び全光線透過率への影響が小さく、表裏の屈折率差が小さい、ポリイミド樹脂膜および樹脂フィルム及びその製造方法、積層体及びその製造方法、を提供することができる。さらに本発明は、表裏で屈折率差が低く、黄色度が低いディスプレイ基板及びその製造方法を提供することができる。
本発明の第一の態様が提供する樹脂組成物は、
(a)ポリイミド前駆体、(b)有機溶媒、及び(d)アルコキシシラン化合物を含有する。
以下各成分を順に説明する。
[(a)ポリイミド前駆体]
第一の態様におけるポリイミド前駆体は、ポリイミドとなった時の支持体との残留応力が-5MPa以上、10MPa以下となるポリイミド前駆体である。ここで、残留応力は後述する実施例に記載の方法にて測定することができる。
第一の態様における支持体は、ガラス基板、シリコーンウエハ、無機膜などが挙げられる。
第一の態様におけるポリイミド前駆体は、ポリイミドとなった時に残留応力が-5MPa以上、10MPa以下であれば限定されないが、無機膜を形成した後の反りの観点から、-3MPa以上、3MPa以下が好ましい。
また、フレキシブルディスプレイへの適用の観点から、黄色度が膜厚10μmにおいて15以下であることが好ましい。
以下、残留応力が-5MPa以上、10MPa以下、かつ黄色度が膜厚10μmにおいて15以下のポリイミドを与えるポリイミド前駆体について説明する。
X1は炭素数4~32の4価の有機基であり;そして
X2は炭素数4~32の2価の有機基である。}
上記、樹脂前駆体において、一般式(8)は、テトラカルボン酸二無水物とジアミンとを反応させることにより得られる構造である。X1はテトラカルボン酸二無水物に由来し、X2はジアミンに由来する。
<テトラカルボン酸二無水物>
次に、前記一般式(8)に含まれる4価の有機基X1を導くテトラカルボン酸二無水物について説明する。
炭素数が6~36の脂環式テトラカルボン酸二無水物として、例えば1,2,3,4-シクロブタンテトラカルボン酸二無水物(以下、CBDAとも記す)、シクロペンタンテトラカルボン酸二無水物、シクロヘキサン-1,2,3,4-テトラカルボン酸二無水物、シクロヘキサン-1,2,4,5-テトラカルボン酸二無水物(以下、CHDAと記す)、3,3’,4,4’-ビシクロヘキシルテトラカルボン酸二無水物、カルボニル-4,4’-ビス(シクロヘキサン-1,2-ジカルボン酸)二無水物、メチレン-4,4’-ビス(シクロヘキサン-1,2-ジカルボン酸)二無水物、1,2-エチレン-4,4’-ビス(シクロヘキサン-1,2-ジカルボン酸)二無水物、1,1-エチリデン-4,4’-ビス(シクロヘキサン-1,2-ジカルボン酸)二無水物、2,2-プロピリデン-4,4’-ビス(シクロヘキサン-1,2-ジカルボン酸)二無水物、オキシ-4,4’-ビス(シクロヘキサン-1,2-ジカルボン酸)二無水物、チオ-4,4’-ビス(シクロヘキサン-1,2-ジカルボン酸)二無水物、スルホニル-4,4’-ビス(シクロヘキサン-1,2-ジカルボン酸)二無水物、ビシクロ[2,2,2]オクト-7-エン-2,3,5,6-テトラカルボン酸二無水物、rel-[1S,5R,6R]-3-オキサビシクロ[3,2,1]オクタン-2,4-ジオン-6-スピロ-3’-(テトラヒドロフラン-2’,5’-ジオン)、4-(2,5-ジオキソテトラヒドロフラン-3-イル)-1,2,3,4-テトラヒドロナフタレン-1,2-ジカルボン酸無水物、エチレングリコール-ビス-(3,4-ジカルボン酸無水物フェニル)エーテル等が、それぞれ挙げられる。
これらのうち、芳香環を有するジカルボン酸が好ましい。
国際公開第2005/068535号パンフレットに記載の5-アミノイソフタル酸誘導体等が挙げられる。これらジカルボン酸をポリマーに実際に共重合させる場合には、塩化チオニル等から誘導される酸クロリド体、活性エステル体等の形で使用してもよい。
第一の態様に係る樹脂前駆体は、X2を導くジアミンとして、具体的には、例えば4,4-(ジアミノジフェニル)スルホン(以下、4,4-DASとも記す)、3,4-(ジアミノジフェニル)スルホン及び3,3-(ジアミノジフェニル)スルホン(以下、3,3-DASとも記す)、2,2’-ビス(トリフルオロメチル)ベンジジン(以下、TFMBとも記す)、2,2’-ジメチル4,4’-ジアミノビフェニル(以下、m-TBとも記す)、1,4-ジアミノベンゼン(以下p-PDとも記す)、1,3-ジアミノベンゼン(以下m-PDとも記す)、4-アミノフェニル4’-アミノベンゾエート(以下、APABとも言う)、4,4’-ジアミノベンゾエート(以下、DABAとも言う)、4,4’-(又は3,4’-、3,3’-、2,4’-)ジアミノジフェニルエーテル、4,4’-(又は3,3’-)ジアミノジフェニルスルフォン、4,4’-(又は3,3’-)ジアミノジフェニルスルフィド、4,4’-ベンゾフェノンジアミン、3,3’-ベンゾフェノンジアミン、4,4’-ジ(4-アミノフェノキシ)フェニルスルフォン、4,4’-ジ(3-アミノフェノキシ)フェニルスルフォン、4,4’-ビス(4-アミノフェノキシ)ビフェニル、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、2,2-ビス{4-(4-アミノフェノキシ)フェニル}プロパン、3,3’,5,5’-テトラメチル-4,4’-ジアミノジフェニルメタン、2,2’-ビス(4-アミノフェニル)プロパン、2,2’,6,6’-テトラメチル-4,4’-ジアミノビフェニル、2,2’,6,6’-テトラトリフルオロメチル-4,4’-ジアミノビフェニル、ビス{(4-アミノフェニル)-2-プロピル}1,4-ベンゼン、9,9-ビス(4-アミノフェニル)フルオレン、9,9-ビス(4-アミノフェノキシフェニル)フルオレン、3,3’-ジメチルベンチジン、3,3’-ジメトキシベンチジン及び3,5-ジアミノ安息香酸、2,6-ジアミノピリジン、2,4-ジアミノピリジン、ビス(4-アミノフェニル-2-プロピル)-1,4-ベンゼン、3,3’-ビス(トリフルオロメチル)-4,4’-ジアミノビフェニル(3,3’-TFDB)、2,2’-ビス[3(3-アミノフェノキシ)フェニル]ヘキサフルオロプロパン(3-BDAF)、2,2’-ビス[4(4-アミノフェノキシ)フェニル]ヘキサフルオロプロパン(4-BDAF)、2,2’-ビス(3-アミノフェニル)ヘキサフルオロプロパン(3,3’-6F)、2,2’-ビス(4-アミノフェニル)ヘキサフルオロプロパン(4,4’-6F)等の芳香族ジアミンを挙げることができる。これらのうち、4,4-DAS,3,3-DAS、1,4-シクロヘキサンジアミン、TFMB、及びAPABから成る群より選択される1種以上を使用することが、黄色度の低下、CTEの低下、高いTgの観点から好ましい。
第一の態様に係る樹脂前駆体は、その一部がイミド化されていてもよい。樹脂前駆体のイミド化は、公知の化学イミド化又は熱イミド化により、行うことができる。これらのうち熱イミド化が好ましい。具体的な手法としては、後述の方法によって樹脂組成物を作製した後、溶液を130~200℃で5分~2時間加熱する方法が好ましい。この方法により、樹脂前駆体が析出を起こさない程度にポリマーの一部を脱水イミド化することができる。ここで、加熱温度及び加熱時間をコントロールすることにより、イミド化率を制御することができる。部分イミド化をすることにより、樹脂組成物の室温保管時の粘度安定性を向上することができる。イミド化率の範囲としては、5%~70%が、溶液への溶解性及び保存安定性の観点から好ましい。
第一の態様における(b)有機溶媒は、後述する第二の態様における(b)有機溶媒と同様である。
次に、第一の態様に係る(d)のアルコキシシラン化合物について説明する。
第一の態様に係るアルコキシシラン化合物は、0.001重量%NMP溶液とした時の308nmの吸光度が、溶液の厚さ1cmにおいて、0.1以上0.5以下である。この要件を充足すれば、その構造は特に限定されない。吸光度がこの範囲内にあることにより、得られる樹脂膜が、高い透明性を保ったまま、レーザー剥離を容易とすることができる。
上記アルコキシシラン化合物は、例えば、
酸二無水物とトリアルコキシシラン化合物との反応、
酸無水物とトリアルコキシシラン化合物との反応、
アミノ化合物とイソシアネートトリアルコキシシラン化合物との反応
等により、合成することができる。上記酸二無水物、酸無水物、及びアミノ化合物は、それぞれ、芳香族環(特にベンゼン環)を有するものであることが好ましい。
第一の態様に係るアルコキシシラン化合物は、接着性の観点から、下記一般式(1):
上記溶媒は、原料化合物及び生成物が溶解すれば限定されないが、上記(a)ポリイミド前駆体との相溶性の観点から、例えば、N-メチル-2-ピロリドン、γ-ブチロラクトン、エクアミドM100(商品名、出光リテール販売社製)、エクアミドB100(商品名、出光リテール販売社製)等が、好ましい。
本発明の第二の態様が提供する樹脂組成物は、
(a)ポリイミド前駆体と、(b)有機溶媒を含有する。
以下各成分を順に説明する。
[(a)ポリイミド前駆体]
本実施形態におけるポリイミド前駆体は、下記式(5)及び(6)で示される構造単位を有する共重合体、または、前記式(5) で示される構造単位を有するポリイミド前駆体と、前記式(2) で示される構造単位を有するポリイミド前駆体の混合物である。そして、本実施形態におけるポリイミド前駆体は、前記(a)ポリイミド前駆体の全体のうち、分子量1,000未満のポリイミド前駆体分子の含有量が、5質量%未満であることを特徴とする。
本発明のポリイミド前駆体(共重合体)は、ピロメリット酸二無水物(以下、PMDAともいう)、4,4’-(ヘキサフルオロイソプロピリデン)ジフタル酸無水物(以下、6FDAともいう)及び、2,2’-ビス(トリフルオロメチル)ベンジジン(以下、TFMBともいう)を重合させることにより得ることができる。すなわち、PMDAとTMFBとが重合することにより構造単位(5)を形成し、6FDAとTFMBとが重合することにより構造単位(6)を形成する。
PMDAを用いることで、得られる硬化物が良好な耐熱性を発現し、かつ残留応力を小さくすることができると考えられる。
6FDAを用いることで、得られる硬化物が良好な透明性を発現し、かつ透過率を高く、YIを小さくすることができると考えられる。
尚、上記原料テトラカルボン酸(PMDA,6FDA)としては、通常これらの酸無水物を用いるが、これらの酸又はこれらの他の誘導体を用いることもできる。
また、TFMBを用いることで、得られる硬化物が良好な耐熱性と透明性を発現することができると考えられる。
上記構造単位(5)及び(6)の比は、テトラカルボン酸類である、PMDAと6FDAの比率を変えることで、調整することができる。
本実施の形態に係るポリイミド前駆体(共重合体)においては、上記構造単位(5)及び(6)の合計質量が、樹脂の総質量基準で、30質量%以上であることが、低CTE、低残留応力の観点から好ましく、更に、70質量%以上が、低CTEの観点から好ましい。最も好ましくは100質量%である。
構造単位(8)において、R1は、好ましくは水素原子である。またX3は、耐熱性、YI値の低減と全光線透過率の観点から、好ましくは二価の芳香族基又は脂環式基である。またX4は、耐熱性、YI値の低減と全光線透過率の観点から、好ましくは二価の芳香族基又は脂環式基である。有機基X1、X2及びX4は、互いに、同一でもよく、異なっていてもよい。
本発明のポリアミド酸(ポリイミド前駆体)の分子量は、重量平均分子量で10000~500000が好ましく、10000~300000がより好ましく、20000~200000が特に好ましい。重量平均分子量が10000より小さいと、塗布した樹脂組成物を加熱する工程において、樹脂膜にクラックが発生する場合があり、また形成することができても機械特性に乏しくなるおそれがある。重量平均分子量が500000よりも大きいと、ポリアミド酸の合成時に重量平均分子量をコントロールするのが難しく、また適度な粘度の樹脂組成物を得ることが難しくなるおそれがある。本開示で、重量平均分子量は、ゲルパーミエーションクロマトグラフィーを用い、標準ポリスチレン換算にて求められる値である。
また、本実施の形態に係るポリイミド樹脂前駆体の数平均分子量は、3000~1000000であることが好ましく、より好ましくは5000~500000、さらに好ましくは7000~300000、特に好ましくは10000~250000である。該分子量が3000以上であることが、耐熱性や強度(例えば強伸度)を良好に得る観点で好ましく、1000000以下であることが、溶媒への溶解性を良好に得る観点、塗工等の加工の際に所望する膜厚にて滲み無く塗工できる観点で好ましい。高い機械伸度を得る観点からは、分子量は50000以上であることが好ましい。本開示で、数平均分子量は、ゲルパーミエーションクロマトグラフィーを用い、標準ポリスチレン換算にて求められる値である。
ポリイミド前駆体の全量に対する、分子量1,000未満のポリイミド前駆体分子の含有量は、該ポリイミド前駆体を溶解した溶液を用いて、ゲルパーミエーションクロマトグラフィー(以下、GPCともいう)測定し、そのピーク面積から算出することができる。
この分子量1,000未満の分子が残存するのは、合成時に使用する溶媒の水分量が関与していると考えられる。すなわち、該水分の影響で、一部の酸二無水物モノマーの酸無水物基が加水分解しカルボキシル基になり、高分子量化することなく低分子の状態で残存すると考えられる。
そして、該溶媒の水分量は、使用する溶媒のグレード(脱水グレードまたは汎用グレード、等)、溶媒容器(ビン、18L缶、キャニスター缶、等)、溶媒保管状態(希ガス封入済または無、等)、開封から使用までの時間(開封後すぐ使用、開封後経時後使用、等)、等が関与すると考えられる。また、合成前の反応器の希ガス置換、合成中の希ガス流入の有無、等も関与すると考えられる。
分子量1,000未満のポリイミド前駆体分子の含有量は、該ポリイミド前駆体を用いた樹脂組成物を硬化したポリイミド樹脂膜の残留応力、該ポリイミド樹脂膜上に形成した無機膜のHazeの観点から、ポリイミド前駆体の全量に対し5%未満であることが好ましく、1%未満であることがさらに好ましい。
これらの項目が、分子量1,000未満の分子の含有量が上記範囲内である場合、良好である理由は不明確であるが、低分子成分が関与していると考えられる。
該樹脂組成物の水分量は、樹脂組成物の保存時の粘度安定性の観点から、3000ppm以下であることが好ましく、1000ppm以下であることがより好ましく、500ppm以下であることがさらに好ましい。
この項目が樹脂組成物の水分量が上記範囲内である場合、良好である理由は不明確であるが、該水分がポリイミド前駆体の分解再結合に関与していると考えられる。
樹脂前駆体を溶媒(たとえば、N-メチル-2-ピロリドン)に溶解して得られる溶液を支持体の表面に塗布した後、該溶液を窒素雰囲気下300~550℃(例えば380℃)で加熱(例えば1時間)することによって該樹脂前駆体をイミド化して得られる樹脂において、15μm膜厚での黄色度が14以下である。
樹脂前駆体を溶媒(たとえば、N-メチル-2-ピロリドン)に溶解して得られる溶液を支持体の表面に塗布した後、該溶液を窒素雰囲気下(例えば酸素濃度2000ppm以下)300~500℃(例えば380℃)で加熱(例えば1時間)することによって該樹脂前駆体をイミド化して得られる樹脂において、残留応力が25MPa以下である。
本発明のポリイミド前駆体(ポリアミド酸)は、従来公知の合成方法で合成することができる。例えば、溶媒に所定量のTFMBを溶解させた後、得られたジアミン溶液に、PMDA、及び6FDAをそれぞれ所定量添加し、撹拌する。
各モノマー成分を溶解させるときには、必要に応じて加熱してもよい。反応温度は-30~200℃が好ましく、20~180℃がより好ましく、30~100℃が特に好ましい。そのまま室温(20~25℃)、又は適当な反応温度で撹拌を続け、GPCで所望の分子量になったことを確認した時点を反応の終点とする。上記反応は、通常3~100時間で完了できる。
また、上述のようなポリアミド酸に、N,N-ジメチルホルムアミドジメチルアセタール又はN,N-ジメチルホルムアミドジエチルアセタールを加えて加熱することで、カルボン酸の一部、又は全部をエステル化することにより、樹脂前駆体と溶媒とを含む溶液の、室温保管時の粘度安定性を向上することもできる。これらエステル変性ポリアミド酸は、他に、上述のテトラカルボン酸無水物を予め酸無水物基に対して1当量の1価のアルコールと反応させた後、塩化チオニルやジシクロヘキシルカルボジイミド等の脱水縮合剤と反応させた後、ジアミンと縮合反応させることでも得ることができる。
そして、上記反応の溶媒としては、ジアミン、テトラカルボン酸類及び生じたポリアミド酸を溶解することのできる溶媒であれば特に制限はされない。このような溶媒の具体例としては、非プロトン性溶媒、フェノ-ル系溶媒、エーテル及びグリコ-ル系溶媒等が挙げられる。
具体的には、非プロトン性溶媒としては、N,N-ジメチルホルムアミド(DMF)、N,N-ジメチルアセトアミド(DMAc)、N-メチル-2-ピロリドン(NMP)、N-メチルカプロラクタム、1,3-ジメチルイミダゾリジノン、テトラメチル尿素、下記一般式(7)で表される、エクアミドM100(商品名:出光興産社製)及びエクアミドB100(商品名:出光興産社製)
等のアミド系溶媒;γ-ブチロラクトン、γ-バレロラクトン等のラクトン系溶媒;ヘキサメチルホスホリックアミド、ヘキサメチルホスフィントリアミド等の含りん系アミド系溶媒;ジメチルスルホン、ジメチルスルホキシド、スルホラン等の含硫黄系溶媒;シクロヘキサノン、メチルシクロヘキサノン等のケトン系溶媒;ピコリン、ピリジン等の3級アミン系溶媒;酢酸(2-メトキシ-1-メチルエチル)等のエステル系溶媒等が挙げられる。フェノ-ル系溶媒としては、フェノ-ル、O-クレゾ-ル、m-クレゾ-ル、p-クレゾ-ル、2,3-キシレノ-ル、2,4-キシレノ-ル、2,5-キシレノ-ル、2,6-キシレノ-ル、3,4-キシレノ-ル、3,5-キシレノ-ル等が挙げられる。エ-テル及びグリコ-ル系溶媒としては、1,2-ジメトキシエタン、ビス(2-メトキシエチル)エ-テル、1,2-ビス(2-メトキシエトキシ)エタン、ビス[2- (2-メトキシエトキシ)エチル]エ-テル、テトラヒドロフラン、1,4-ジオキサン等が挙げられる。
これらの中でも、常圧における沸点は、60~300℃が好ましく、140~280℃がより好ましく、170~270℃が特に好ましい。沸点が300℃より高いと乾燥工程が長時間必要となり、60℃より低いと、乾燥工程において樹脂膜の表面に荒れが発生したり、樹脂膜中に気泡が混入したりし、均一な膜が得られない可能性がある。このように、有機溶剤の沸点が170~270℃であることおよび、20℃における蒸気圧が250Pa以下であることが、溶解性及び、塗工時エッジはじきの観点から好ましい。より具体的には、N-メチル-2-ピロリドン、γ-ブチロラクトン、前記エクアミドM100及び、エクアミドB100、等が挙げられる。これらの反応溶媒は単独で又は2種類以上混合して用いてもよい。
上記ポリアミド酸溶液の溶液粘度は、25℃で500~200000mPa・sが好ましく、2000~100000mPa・sがより好ましく、3000~30000mPa・sが特に好ましい。溶液粘度は、E型粘度計(東機産業株式会社製VISCONICEHD)を用いて測定できる。溶液粘度が300mPa・sより低いと膜形成の際の塗布がしにくく、200000mPa・sより高いと合成の際の撹拌が困難になるという問題が生じる恐れがある。しかしながら、ポリアミド酸合成の際に溶液が高粘度になったとしても、反応終了後に溶媒を添加して撹拌することで、取扱い性のよい粘度のポリアミド酸溶液を得ることも可能である。本発明のポリイミドは、上記ポリイミド前駆体を加熱し、脱水閉環することにより得られる。
本発明の別の態様は、前述した(a)ポリイミド前駆体と、(b)有機溶剤とを含有する、樹脂組成物を提供する。樹脂組成物は、典型的にはワニスである。
[(b)有機溶剤]
(b)有機溶剤は、本発明のポリイミド前駆体(ポリアミド酸)を溶解できるものであれば特に制限はなく、このような(b)有機溶剤としては上記(a)ポリイミド前駆体の合成時に用いることのできる溶媒を用いることができる。(b)有機溶剤は(a)ポリアミド酸の合成時に用いられる溶媒と同一でも異なってもよい。
(b)成分は、樹脂組成物の固形分濃度が3~50質量%となる量とすることが好ましい。樹脂組成物の粘度(25℃)としては、500mPa・s~100000mPa・sとなるように調整して加えることが好ましい。
本実施の形態に係る樹脂組成物は、室温保存安定性に優れ、室温で2週間保存した場合のワニスの粘度変化率は、初期粘度に対して10%以下である。室温保存安定性に優れると、冷凍保管が不要となり、ハンドリングし易くなる。
本発明の樹脂組成物は、上記(a)、(b)成分の他にアルコキシシラン化合物、界面活性剤又はレベリング剤等を含有してもよい。
(アルコキシシラン化合物)
本実施の形態に係る樹脂組成物から得られるポリイミドが、フレキデバイス等の製造プロセスにおいて、支持体との間の密着性を十分なものとするために、樹脂組成物は、ポリイミド前駆体100質量%に対してアルコキシシラン化合物を0.01~20質量%を含有することができる。
本実施形態にかかる樹脂組成物の添加剤としてアルコキシシラン化合物を用いることにより、樹脂組成物の塗工性(スジムラ抑制)を向上し、得られる硬化膜のYI値のキュア時酸素濃度依存性を低下させることができる。
また、界面活性剤又はレベリング剤を樹脂組成物に添加することによって、塗布性を向上することができる。具体的には、塗布後のスジの発生を防ぐことができる。
このような界面活性剤又はレベリング剤としては、
シリコーン系界面活性剤:オルガノシロキサンポリマーKF-640、642、643、KP341、X-70-092、X-70-093、KBM303、KBM403、KBM803(以上、商品名、信越化学工業社製)、SH-28PA、SH-190、SH-193、SZ-6032、SF-8428、DC-57、DC-190(以上、商品名、東レ・ダウコーニング・シリコーン社製)、SILWET L-77,L-7001,FZ-2105,FZ-2120,FZ-2154,FZ-2164,FZ-2166,L-7604(以上、商品名、日本ユニカー社製)、DBE-814、DBE-224、DBE-621、CMS-626、CMS-222、KF-352A、KF-354L、KF-355A、KF-6020、DBE-821、DBE-712(Gelest)、BYK-307、BYK-310、BYK-378、BYK-333(以上、商品名、ビックケミー・ジャパン製)、グラノール(商品名、共栄社化学社製)、等が挙げられ、
フッ素系界面活性剤:メガファックF171、F173、R-08(大日本インキ化学工業株式会社製、商品名)、フロラードFC4430、FC4432(住友スリーエム株式会社、商品名)、等が挙げられ、
その他の非イオン界面活性剤:ポリオキシエチレンウラリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンオレイルエーテル、ポリオキシエチレンオクチルフェノールエーテル、等が挙げられる。
これらの界面活性剤の中でも、樹脂組成物の塗工性(スジ抑制)の観点から、シリコーン系界面活性剤、フッ素系界面活性剤が好ましく、キュア工程時の酸素濃度によるYI値及び全光線透過率への影響の観点から、シリコーン系界面活性剤が好ましい。
本発明の樹脂組成物の製造方法は、特に限定されるものではないが、例えば、(a)ポリアミド酸を合成した際に用いた溶媒と(b)有機溶剤が同一の場合には、合成したポリアミド酸溶液を樹脂組成物とすることができる。また、必要に応じて、室温(25℃)~80℃の温度範囲で、(b)有機溶剤及び他の添加剤を添加して、攪拌混合してもよい。この攪拌混合は撹拌翼を備えたスリーワンモータ(新東化学株式会社製)、自転公転ミキサー等の装置を用いることができる。また必要に応じて40~100℃の熱を加えてもよい。
また、(a)ポリアミド酸を合成した際に用いた溶媒と(b)有機溶剤が異なる場合には、合成したポリアミド酸溶液中の溶媒を、再沈殿や溶媒留去の方法により除去し、(a)ポリアミド酸を得た後に、室温~80℃の温度範囲で、(b)有機溶剤及び必要に応じて他の添加剤を添加して、攪拌混合してもよい。
本発明の樹脂組成物は、液晶ディスプレイ、有機エレクトロルミネッセンスディスプレイ、フィールドエミッションディスプレイ、電子ペーパー等の表示装置の透明基板を形成するために用いることができる。具体的には、薄膜トランジスタ(TFT)の基板、カラーフィルタの基板、透明導電膜(ITO、IndiumThinOxide)の基板等を形成するために用いることができる。
本発明の第一の態様では、樹脂組成物を支持体の表面に塗布した後、該樹脂組成物に含まれるポリイミド前駆体をイミド化して得られるポリイミドが示す、支持体との残留応力が-5MPa以上、10MPa以下である。
また、第一の態様の樹脂組成物に含まれるアルコキシシラン化合物は、0.001質量%のNMP溶液とした時の308nmの吸光度が、溶液の厚さ1cmにおいて0.1以上、0.5以下である。
また、本発明の第二の態様では、樹脂組成物を支持体の表面に塗布した後、該樹脂組成物を窒素雰囲気下300℃~550℃で加熱することによって(又は酸素濃度2000ppm以下にて380℃で加熱することによって)樹脂組成物に含まれる樹脂前駆体をイミド化して得られる樹脂が示す15μm膜厚での黄色度が14以下である。
第二の態様の樹脂組成物を支持体の表面に塗布した後、該樹脂組成物を窒素雰囲気下300℃~500℃で加熱することによって(又は窒素雰囲気下380℃で加熱することによって)樹脂組成物に含まれる樹脂前駆体をイミド化して得られる樹脂が示す残留応力が25MPa以下である。
本発明の別の態様は、前述の樹脂前駆体の硬化物、又は前述の前駆体混合物の硬化物、又は前述の樹脂組成物の硬化物である樹脂フィルムを提供する。
また、本発明の別の態様は、前述の樹脂組成物を支持体の表面上に塗布する工程と、
塗布した樹脂膜を乾燥し、溶媒を除去する工程と、
該支持体及び該樹脂組成物を加熱して該樹脂組成物に含まれる樹脂前駆体をイミド化して樹脂フィルムを形成する工程と、
該樹脂フィルムを該支持体から剥離する工程と、
を含む、樹脂フィルムの製造方法を提供する。
本発明の樹脂組成物の塗布厚は、目的とする成形体の厚さと樹脂組成物中の樹脂不揮発成分の割合により適宜調整されるものであるが、通常1~1000μm程度である。樹脂不揮発成分は上述の測定方法により求められる。塗布工程は、通常室温で実施されるが、粘度を下げて作業性をよくする目的で樹脂組成物を40~80℃の範囲で加温して実施してもよい。
塗布工程に続き、乾燥工程を行う。乾燥工程は、有機溶剤除去の目的で行われる。乾燥工程はホットプレート、箱型乾燥機やコンベヤー型乾燥機等の装置を利用することができ、80~200℃で行うことが好ましく、100~150℃で行うことがより好ましい。
加熱工程は、イナートガスオーブンやホットプレート、箱型乾燥機、コンベヤー型乾燥機等の装置を用いて行う。この工程は前記乾燥工程と同時に行っても、逐次的に行ってもよい。
加熱工程は、空気雰囲気下でもよいが、安全性及び得られる硬化物の透明性、YI値の観点から、不活性ガス雰囲気下で行うことが推奨される。不活性ガスとしては窒素、アルゴン等が挙げられる。加熱温度は(b)有機溶剤の種類にもよるが、250℃~550℃が好ましく、300~350℃がより好ましい。250℃より低いとイミド化が不十分となり、550℃より高いとポリイミド成形体の透明性が低下したり、耐熱性が悪化したりする恐れがある。加熱時間は、通常0.5~3時間程度である。
本発明の場合、該加熱工程における酸素濃度は、得られる硬化物の透明性、YI値の観点から2000ppm以下が好ましく、100ppm以下がより好ましく、10ppm以下がさらに好ましい。酸素濃度を2000ppm以下にすることにより、得られる硬化物のYI値を15以下にすることができる。
この剥離工程としては、下記がある。
(1)前記方法により、ポリイミド樹脂膜/支持体を含む構成体を得て、その後支持体側からレーザーを照射することにより、ポリイミド樹脂界面をアブレーション加工することにより、ポリイミド樹脂を剥離する方法。レーザーの種類としては、固体(YAG)レーザー、ガス(UVエキシマー)レーザーがあり、308nm等のスペクトルを用いる(特表2007-512568公報、特表2012‐511173公報、他参照)。
(2)支持体に樹脂組成物を塗工する前に、支持体に剥離層を形成し、その後ポリイミド樹脂膜/剥離層/支持体を含む構成体を得て、ポリイミド樹脂膜を剥離する方法。剥離層としては、パリレン(登録商標、日本パリレン合同会社製)、酸化タングステンを用いた方法、植物油系、シリコーン系、フッ素系、アルキッド系の離型剤を用いた方法、等があり、前記(1)のレーザー照射と併用する場合もある(特開2010-67957公報、特開2013-179306公報、他参照)。
(3)支持体としてエッチング可能な金属を用いて、ポリイミド樹脂膜/支持体を含む構成体を得て、その後、エッチャントで金属をエッチングして、ポリイミド樹脂膜を得る方法。金属としては銅(具体例としては、三井金属鉱業株式会社製の電解銅箔「DFF」)、アルミ等があり、エッチャントとしては、銅:塩化第二鉄、アルミ:希塩酸等がある。
(4)前記方法により、ポリイミド樹脂膜/支持体を含む構成体を得て、ポリイミド樹脂膜表面に粘着フィルムを貼り付け、支持体から粘着フィルム/ポリイミド樹脂膜を分離し、その後粘着フィルムからポリイミド樹脂膜を分離する方法。
なお、(3)の支持体に銅を用いた場合は、得られるポリイミド樹脂膜のYI値が大きくなり、伸度が小さくなっているが、これは銅イオンが何らかの関与をしていると考えられる。
このような特性は、第一の態様の樹脂組成物に含まれるアルコキシシラン化合物の、0.001質量%のNMP溶液とした時の308nmの吸光度が、溶液の厚さ1cmにおいて0.1以上、0.5以下とすることにより、良好に実現される。これにより得られる樹脂膜が、高い透明性を保ったまま、レーザー剥離を容易とすることができる。
また、第二の態様に係る樹脂フィルムは、15μm膜厚での黄色度が14以下であることが好ましい。また、残留応力が25MPa以下であることが好ましい。特に、15μm膜厚での黄色度が14以下であり、かつ、残留応力が25MPa以下であることがさらに好ましい。このような特性は、例えば、本開示の樹脂前駆体を、窒素雰囲気下、より好ましくは、酸素濃度2000ppm以下で、300℃~550℃、より特別には380℃でイミド化することにより良好に実現される。
本発明の別の態様は、支持体と、該支持体の表面上に形成された、前述の樹脂組成物の硬化物であるポリイミド樹脂膜とを含む、積層体を提供する。
また本発明の別の態様は、支持体の表面上に、前述の樹脂組成物を塗布する工程と、
該支持体及び該樹脂組成物を加熱して該樹脂組成物に含まれる該樹脂前駆体をイミド化してポリイミド樹脂膜を形成し、これにより該支持体及び該ポリイミド樹脂膜を含む積層体を得る工程と、
を含む、積層体の製造方法を提供する。
このような積層体は、例えば、前述の樹脂フィルムの製造方法と同様に形成したポリイミド樹脂膜を、支持体から剥離しないことによって製造できる。
従って、本発明の別の態様は、前述の樹脂前駆体、又は前述の前駆体混合物を硬化して得られるポリイミド樹脂膜を含むフレキシブルデバイス材料を提供する。
本実施の形態では、ポリイミドフィルムと、SiNと、SiO2とを、この順で積層してなる積層体を得ることが出来る。この順とすることで、反りのないフィルムが得られるだけでなく、積層体とした後に、無機膜との剥がれのない良好な積層体を得ることが出来る。
該支持体及び該樹脂組成物を加熱してポリイミド前駆体をイミド化して、前述のポリイミド樹脂膜を形成する工程と、
該ポリイミド樹脂膜上に素子または回路を形成する工程と、
該素子または回路が形成された該ポリイミド樹脂膜を形成する工程と
を含む、ディスプレイ基板の製造方法を提供する。
上記方法において、支持体上に樹脂組成物を塗布する工程、ポリイミド樹脂膜を形成する工程、および、ポリイミド樹脂膜を剥離する工程は、上述した樹脂フィルムおよび積層体の製造方法と同様にして行うことができる。
実施例及び比較例における各種評価は次の通り行った。
重量平均分子量(Mw)及び、数平均分子量(Mn)は、ゲルパーミエーションクロマトグラフィー(GPC)にて、下記の条件により測定した。溶媒としては、N,N-ジメチルホルムアミド(和光純薬工業社製、高速液体クロマトグラフ用)を用い、測定前に24.8mmol/Lの臭化リチウム一水和物(和光純薬工業社製、純度99.5%)及び63.2mmol/Lのリン酸(和光純薬工業社製、高速液体クロマトグラフ用)を加えたものを使用した。また、重量平均分子量を算出するための検量線は、スタンダードポリスチレン(東ソー社製)を用いて作成した。
流速:1.0mL/分
カラム温度:40℃
ポンプ:PU-2080Plus(JASCO社製)
検出器:RI-2031Plus(RI:示差屈折計、JASCO社製)
UV‐2075Plus(UV-VIS:紫外可視吸光計、JASCO社製)
以下では、樹脂組成物について、アルコキシシラン化合物の吸光度と、得られた樹脂組成物の特性とについて実験を行い、評価した。
<アルコキシシラン化合物の合成>
[合成例1]
50mlのセパラブルフラスコを窒素置換し、そのセパラブルフラスコにN-メチル-2-ピロリドン(NMP)を19.5g入れ、更に原料化合物1としてBTDA(ベンゾフェノンテトラカルボン酸二無水物)2.42g(7.5mmol)及び原料化合物2として3-アミノプロピルトリエトキシシラン(商品名:LS-3150、信越化学社製社製)3.321g(15mmol)を入れ、室温において5時間反応させることにより、アルコキシシラン化合物1のNMP溶液を得た。
このアルコキシシラン化合物1を0.001質量%のNMP溶液とし、測定厚さ1cmの石英セルに充填し、UV-1600(島津社製)で測定した時の吸光度は0.13であった。
上記合成例1において、N-メチル-2-ピロリドン(NMP)の使用量、並びに原料化合物1及び2の種類及び使用量を、それぞれ表1に記載のとおりとした他は合成例1と同様にして、アルコキシシラン化合物2~5のNMP溶液を得た。
これらのアルコキシシラン化合物を、それぞれ、0.001質量%のNMP溶液とし、上記合成例1におけるのと同様にして測定した吸光度を、表1に合わせて示した。
[合成例6]
後述の実施例1において、原料仕込みをPMDAを40.2mmolに、6FDAの代わりにODPA9.8mmolに変更した以外は実施例1と同様にしてP-18を得た。得られたポリアミド酸の重量平均分子量(Mw)は、170,000であった。
また、P-18の残留応力は-1MPaであった。
[合成例7]
後述の実施例1において、原料仕込みをPMDAを42.6mmolに、6FDAの代わりにTAHQ7.4mmolに変更した以外は実施例1と同様にしてP-19を得た。得られたポリアミド酸の重量平均分子量(Mw)は、175,000であった。
また、P-19の残留応力は1MPaであった。
[合成例8]
後述の実施例1において、原料仕込みをPMDAを39.3mmolに、6FDAの代わりにBPDA10.7mmolに変更した以外は実施例1と同様にしてP-20を得た。得られたポリアミド酸の重量平均分子量(Mw)は、175,000であった。
また、P-20の残留応力は2MPaであった。
容器中で、上記溶液P-1(10g)と、表1に示した種類及び量のアルコキシシラン化合物を仕込み、よく撹拌することにより、ポリイミド前駆体であるポリアミド酸を含有する樹脂組成物をそれぞれ調製した。
上記各樹脂組成部について、上記あるいは下記に記載の方法によって測定した接着性、レーザー剥離性、及びYI(膜厚10μm換算)を、それぞれ表2に示した。
(レーザー剥離強度の測定)
上記に記載したコート方法及びキュア方法によって得た、無アルカリガラス上に膜厚10μmのポリイミド膜を有する積層体に、エキシマレーザー(波長308nm、繰り返し周波数300Hz)を照射し、10cm×10cmのポリイミド膜の全面を剥離するのに必要な最小エネルギーを求めた。
一方、アルコキシシラン化合物を含有しない比較例4では、ガラス基板との接着性が低く、剥離する際のエネルギーが大きい。また、剥離時にパーティクルが発生してしまった。吸光度が0.1よりも小さい(0.015)アルコキシシラン化合物5を用いた比較例では、接着性が低く、剥離する際のエネルギーが大きい。また、剥離時にパーティクルが発生してしまった。これらの比較例4,5では、黄色度が不十分であった。
以上の結果から、本発明の第一の態様に係る樹脂組成物から得られるポリイミド樹脂膜は、ガラス基板(支持体)との接着性に優れ、レーザー剥離時にパーティクルを生じない樹脂フィルムであることが確認された。
以下では、ポリイミド前駆体について、構造単位および分子量1000未満の低分子量の含有率と、得られた樹脂組成物の特性とについて実験を行い、評価した。
[実施例1]
500mlセパラブルフラスコを窒素置換し、そのセパラブルフラスコに、18L缶開封直後のN-メチル-2-ピロリドン(NMP)(水分量250ppm)を、固形分含有量15wt%に相当する量を入れ、2,2’-ビス(トリフルオロメチル)ベンジジン(TFMB)を15.69g(49.0mmol)を入れ、撹拌してTFMBを溶解させた。その後、ピロメリット酸二無水物(PMDA)を9.82g(45.0mmol)及び、4,4’-(ヘキサフルオロイソプロピリデン)ジフタル酸無水物(6FDA)を2.22g(5.0mmol)加え、窒素フロー下で80℃4時間撹拌し、室温まで冷却後、前記NMPを加えて樹脂組成物粘度が51000mPa・sになるように調整し、ポリアミド酸のNMP溶液(以下、ワニスともいう)P-1を得た。得られたポリアミド酸の重量平均分子量(Mw)は、180,000であった。
また、P-1の残留応力は-2MPaであった。
原料の仕込みを、PMDAを9.27g(42.5mmol)に、6FDAを3.33g(7.5mmol)に変更した以外は、実施例1と同様にしてワニスP-2を得た。得られたポリアミド酸の重量平均分子量(Mw)は190,000であった。
原料の仕込みを、PMDAを7.63g(35.0mmol)に、6FDAを6.66g(15.0mmol)に変更した以外は、実施例1と同様にしてワニスP-3を得た。得られたポリアミド酸の重量平均分子量(Mw)は190,000であった。
原料の仕込みを、PMDAを5.45g(25.0mmol)に、6FDAを11.11g(25.0mmol)に変更した以外は、実施例1と同様にしてワニスP-4を得た。得られたポリアミド酸の重量平均分子量(Mw)は200,000であった。
原料の仕込みを、PMDAを3.27g(15.0mmol)に、6FDAを15.55g(35.0mmol)に変更した以外は、実施例1と同様にしてワニスP-15を得た。得られたポリアミド酸の重量平均分子量(Mw)は201,000であった。
500mlセパラブルフラスコを窒素置換し、そのセパラブルフラスコに、18L缶開封直後のNMP(水分量250ppm)を、固形分含有量15wt%に相当する量を入れ、TFMBを15.69g(49.0mmol)を入れ、撹拌してTFMBを溶解させた。その後、PMDAを10.91g(50.0mmol)加え、窒素フロー下で80℃4時間撹拌し、ワニスP-5aを得た。得られたポリアミド酸の重量平均分子量(Mw)は、180,000であった。
次に500mlセパラブルフラスコを窒素置換し、そのセパラブルフラスコに、18L缶開封直後のNMP(水分量250ppm)を、固形分含有量15wt%に相当する量を入れ、TFMBを15.69g(49.0mmol)を入れ、撹拌してTFMBを溶解させた。その後、6FDAを22.21g(50.0mmol)加え、窒素フロー下で80℃4時間撹拌し、ワニスP-5bを得た。得られたポリアミド酸の重量平均分子量(Mw)は、200,000であった。
そして、ワニスP-5aとP-5bを重量比85:15になるように秤量し、前記NMPを加えて樹脂組成物粘度が5000mPa・sになるように調整し、ワニスP-5を得た。
合成溶剤を18L缶開封直後のγ―ブチロラクトン(GBL)(水分量280ppm)に変更した以外は、実施例2と同様にしてワニスP-6を得た。得られたポリアミド酸の重量平均分子量(Mw)は180,000であった。
合成溶剤を18L缶開封直後のエクアミドM100(製品名、出光製)(水分量260ppm)に変更した以外は、実施例7と同様にしてワニスP-7を得た。得られたポリアミド酸の重量平均分子量(Mw)は190,000であった。
合成溶剤を18L缶開封直後のエクアミドB100(製品名、出光製)(水分量270ppm)に変更した以外は、実施例7と同様にしてワニスP-8を得た。得られたポリアミド酸の重量平均分子量(Mw)は190,000であった。
実施例2の実験条件の内、初めのセパラブルフラスコの窒素置換を行わないことと、合成中の窒素フローを行わないことを変更した以外は、実施例2と同様にして行い、ワニスP-9を得た。得られたポリアミド酸の重量平均分子量(Mw)は180,000であった。
合成溶剤を500mlビン開封直後のNMP(汎用グレード、脱水グレードではない)(水分量1120ppm)に変更した以外は、実施例10と同様にしてワニスP-10を得た。得られたポリアミド酸の重量平均分子量(Mw)は170,000であった。
合成溶剤を500mlビン開封直後のGBL(汎用グレード、脱水グレードではない)(水分量1610ppm)に変更した以外は、実施例10と同様にしてワニスP-11を得た。得られたポリアミド酸の重量平均分子量(Mw)は160,000であった。
合成溶剤を500mlビン開封直後のエクアミドM100(汎用グレード、脱水グレードではない)(水分量1250ppm)に変更した以外は、実施例10と同様にしてワニスP-12を得た。得られたポリアミド酸の重量平均分子量(Mw)は170,000であった。
合成溶剤を500mlビン開封直後のDMAc(汎用グレード、脱水グレードではない)(水分量2300ppm)に変更した以外は、実施例10と同様にしてワニスP-13を得た。得られたポリアミド酸の重量平均分子量(Mw)は160,000であった。
500mlセパラブルフラスコを窒素置換し、そのセパラブルフラスコに、18L缶開封直後のNMP(水分量250ppm)を、固形分含有量15wt%に相当する量を入れ、TFMBを15.69g(49.0mmol)を入れ、撹拌してTFMBを溶解させた。その後、ピロメリット酸二無水物(PMDA)を10.91g(50.0mmol)加え、窒素フロー下で80℃4時間撹拌し、室温まで冷却後、前記NMPを加えて樹脂組成物粘度が51000mPa・sになるように調整し、ワニスP-14を得た。得られたポリアミド酸の重量平均分子量(Mw)は、180,000であった。
合成溶剤を、500mlビン入りDMAcを開封し一か月以上放置したもの(水分量3150ppm)に変更し、TFMBの仕込みを16.01g(50.0mmol)にした以外は、実施例10と同様にしてワニスP-16を得た。得られたポリアミド酸の重量平均分子量(Mw)は170,000であった。
合成溶剤を、500mlビン入りDMFを開封し一か月以上放置したもの(水分量3070ppm)に変更し、TFMBの仕込みを16.01g(50.0mmol)にした以外は、実施例10と同様にしてワニスP-17を得た。得られたポリアミド酸の重量平均分子量(Mw)は170,000であった。
<分子量1,000以下の含有量の評価>
上記、GPCの測定結果を用いて、下記式から算出した。
分子量1,000以下の含有量(%)=
分子量1,000の成分の占めるピーク面積/分子量分布全体のピーク面積
×100
合成溶剤及び、樹脂組成物(ワニス)の水分量は、カールフィッシャー水分測定装置(微量水分測定装置AQ-300、平沼産業社製)を用いて測定を行った。
前記の実施例及び比較例のそれぞれで調製した樹脂組成物を、室温で3日間静置したサンプルを調製後のサンプルとして23℃における粘度測定を行った。その後さらに室温で2週間静置したサンプルを2週間後のサンプルとし、再度23℃における粘度測定を行った。
粘度測定は、温調機付粘度計(東機産業械社製TV-22)を用いて行った。
上記の測定値を用いて、下記数式により室温4週間粘度変化率を算出した。
室温2週間粘度変化率(%)=[(2週間後のサンプルの粘度)-(調整後のサンプルの粘度)]/(調整製後のサンプルの粘度)×100
室温2週間粘度変化率は、下記基準で評価した。
◎:粘度変化率が5%以下(保存安定性「優良」)
○:粘度変化率が5超10%以下(保存安定性「良好」)
×:粘度変化率が10%超(保存安定性「不良」)
前記の実施例及び比較例のそれぞれで調製した樹脂組成物を、無アルカリガラス基板(サイズ10×10mm、厚さ0.7mm)上にバーコーターを用いて、キュア後膜厚15μmになるように塗工を行った。そして、室温にて5時間放置したのち、塗工エッジのハジキの程度を観察した。塗工膜四辺のハジキ幅の和を算出し、下記基準で評価した。
◎:塗工エッジのハジキ幅(四辺の和)が0超5mm以下である(エッジはじきの評価「優良」)
○:前記ハジキ幅(四辺の和)が5mm超15mm以下である(エッジはじきの評価「良好」)
×:前記ハジキ幅(四辺の和)が15mm超である(エッジはじきの評価「不可」)
残留応力測定装置(テンコール社製、型式名FLX-2320)を用いて、予め「反り量」を測定しておいた、厚み625μm±25μmの6インチシリコンウェハー上に、樹脂組成物をバーコーターにより塗布し、140℃にて60分間プリベークした。その後、縦型キュア炉(光洋リンドバーグ社製、型式名VF-2000B)を用いて、酸素濃度が10ppm以下になるように調整して、380℃において60分間の加熱硬化処理(キュア処理)を施し、硬化後膜厚15μmのポリイミド樹脂膜のついたシリコンウェハーを作製した。このウェハーの反り量を前述の残留応力測定装置を用いて測定し、シリコンウェハーと樹脂膜の間に生じた残留応力を評価した。
◎:残留応力が-5超15MPa以下(残留応力の評価「優良」)
○:残留応力が15超25MPa以下(残留応力の評価「良好」)
×:残留応力が25MPa超(残留応力の評価「不可」)
上記実施例及び比較例のそれぞれで調製した樹脂組成物を、表面にアルミ蒸着層を設けた6インチシリコンウェハー基板に、硬化後膜厚が15μmになるようにコートし、140℃にて60分間プリベークした。その後、縦型キュア炉(光洋リンドバーグ社製、型式名VF-2000B)を用いて、酸素濃度が10ppm以下になるように調整して、380℃1時間の加熱硬化処理を施し、ポリイミド樹脂膜が形成されたウェハーを作製した。このウェハーを希塩酸水溶液に浸漬し、ポリイミド樹脂膜を剥離することにより、樹脂膜を得た。そして、得られたポリイミド樹脂膜のYIを、日本電色工業(株)製(Spectrophotometer:SE600)にてD65光源を用いて、YI値(第一の態様は膜厚10μm換算、第二の態様は膜厚15μm換算)を測定した。
上記<黄色度(YI値)の評価>において作製した、ポリイミド樹脂膜が形成されたウェハーを用いて、ポリイミド樹脂膜上に、CVD法を用いて350℃において、無機膜である窒化ケイ素(SiNx)膜を100nmの厚さで形成し、無機膜/ポリイミド樹脂が形成された積層体ウェハーを得た。
上記で得られた積層体ウェハーを希塩酸水溶液に浸漬し、無機膜及びポリイミドフィルムの二層を一体としてウェハーから剥離することにより、表面に無機膜が形成されたポリイミドフィルムのサンプルを得た。このサンプルを用いて、スガ試験機社製SC-3H型ヘイズメーターを用いてJIS K7105透明度試験法に準拠してHazeの測定を行った。
測定結果は下記基準で評価した。
◎:Hazeが5以下(Haze「優良」)
○:Hazeが5超15以下(Haze「良好」)
×:Hazeが15超(Haze「不良」)
以上のようにして各項目について評価した結果を表3に示す。
そして、このような樹脂組成物を硬化したポリイミド樹脂膜は、残留応力が十分に小さく、黄色度が14以下(15μm膜厚)であり、該ポリイミド樹脂膜上に形成した無機膜のHazeが15以下であることを同時に満たし、優れた特性を有することが確認された。
また、溶媒中の水分量が3000ppm以上であった比較例2,3では、ポリイミド前駆体の分子量1,000未満の含有量が5質量%以上となった。この場合、保存時の粘度安定性が低く、塗工時のエッジはじきが不十分であった。このような樹脂組成物を用いたポリイミド樹脂膜は、残留応力およびHazeが不十分であった。
[実施例15]
実施例2で得られたポリイミド前駆体のワニスP-2を、無アルカリガラス基板(厚さ0.7mm)上にバーコーターを用いて塗工した。続いて、室温において5分間~10分間のレベリングを行った後、熱風オーブン中で140℃において60分間加熱し、塗膜が形成されたガラス基板積層体を作製した。塗膜の膜厚は、キュア後膜厚が15μmになるようにした。次いで、縦型キュア炉(光洋リンドバーグ社製、型式名VF-2000B)を用いて、酸素濃度が10ppm以下になるように調整して、380℃60分間の加熱硬化処理をして、塗膜をイミド化し、ポリイミド膜(ポリイミド樹脂膜)が形成されたガラス基板積層体を作製した。キュア後の積層体を室温において24時間静置した後、下記方法でポリイミド膜をガラス基板から剥離した。
すなわち、ガラス基板の側からポリイミド膜に向けて、Nd:Yagレーザーの第3高調波(355nm)により、レーザー光を照射した。段階的に照射エネルギーを増やし、剥離が可能となった最少照射エネルギーにてレーザー照射して、ガラス基板からポリイミド膜を剥離し、ポリイミド膜を得た。
実施例14のガラス基板の代わりに、ガラス基板上に剥離層としてパリレンHT(登録商標、日本パリレン合同会社製)が形成されたガラス基板を用いた。
パリレンHTが形成されたガラス基板は、下記方法により作製した。
パリレン前駆体(パリレンの二量体)を熱蒸着装置内に入れ、中空パッド(8cm×8cm)で覆ったガラス基板(15cm×15cm)を試料室に置いた。真空中にてパリレン前駆体を150℃で気化させ、650℃で分解してから、試料室に導入した。そして、室温で、パッドに覆われていない領域上にパリレンを蒸着し、下記式(9)で表されるパリレンHTが形成されたガラス基板を(8cm×8cm)を作製した。
その後、パリレンHTが形成されていない8cm×8cmの外周部分のガラス積層体をカットすると、ポリイミド膜はガラス基板から容易に剥離することができ、ポリイミド膜を得た。
先行技術、特許文献4、実施例1に記載の方法を参照し、ポリイミド膜を作製した。
上記実施例15のガラス基板の代わりに、厚さ18μmの銅箔(三井金属鉱業株式会社製の電解銅箔「DFF」) を用いて、実施例14と同様の方法で、ポリイミド膜が形成された銅箔を作製した。次にこのポリイミド膜が形成された銅箔を塩化第二鉄エッチング液に浸漬させ、銅箔を除去し、ポリイミド膜を得た。
先行技術、特許文献4、実施例5に記載の方法を参照し、ポリイミド膜を作製した。
上記実施例15と同様の方法で得られたポリイミド膜が形成されたガラス基板を作製したのち、ポリイミド膜の表面に粘着フィルム(PETフィルム100μm、粘着剤33μm)を張り合わせ、ガラス基板からポリイミド膜を剥離し、次いで粘着フィルムからポリイミド膜を分離し、ポリイミド膜を得た。
実施例15の実験条件の内、キュア時の酸素濃度を、100ppmに調整した以外は、実施例15と同様に操作を行い、ポリイミド膜を得た。
実施例15の実験条件の内、キュア時の酸素濃度を、2000ppmに調整した以外は、実施例15と同様に操作を行い、ポリイミド膜を得た。
実施例15の実験条件の内、キュア時の酸素濃度を、5000ppmに調整した以外は、実施例15と同様に操作を行い、ポリイミド膜を得た。
<ポリイミド樹脂膜表裏の屈折率差の評価>
実施例15~21で得られたポリイミド膜の表面と裏面の屈折率nを、屈折率測定機Model2010/M(製品名、Merricon製)で測定した。
実施例15~21で得られたポリイミド樹脂膜のYIを、日本電色工業(株)製(Spectrophotometer:SE600)にてD65光源を用いて、YI値(膜厚15μm換算)を測定した。
実施例15~21で得られたポリイミド樹脂膜を用いて、サンプル長5×50mm、厚み15μmの樹脂フィルムを引張り試験機(株式会社エーアンドディ製:RTG-1210)を用いて、23℃50%Rh雰囲気下で、速度100mm/minで引張り試験を行い、引張伸度を測定した。
以上のようにして各項目について評価した結果を表4に示す。
また、ポリイミド樹脂膜の剥離法として、支持体に銅箔を用いてエッチングした実施例17では、ポリイミド樹脂膜の黄色度が高かった。また、引張伸度も低かった。また、粘着フィルムを用いて剥離した実施例18の場合には、表裏の屈折率差が大きかった。また、引張伸度も十分ではなかった。
以上の結果から、本発明に係るポリイミド前駆体から得られるポリイミド樹脂膜は、黄色度が小さく、残留応力が低く、機械的物性に優れ、さらに、キュア時の酸素濃度による黄色度への影響が小さい樹脂フィルムであることが確認された。
実施例2で得られたポリイミド前駆体のワニスを用いて、塗布スジ及び、黄色度(YI値)のキュア時酸素濃度依存性について評価を行った。
[実施例22]
実施例2で得られたポリイミド前駆体のワニスP-2を用いた。
実施例2で得られたポリイミド前駆体のワニスに、樹脂100重量部に対して、0.025重量部換算のシリコーン系界面活性剤1(DBE-821、製品名、Gelest製)を溶解させ、0.1μmのフィルターで濾過することにより、樹脂組成物を調整した。
実施例2で得られたポリイミド前駆体のワニスに、樹脂100重量部に対して、0.025重量部換算のフッ素系界面活性剤2(メガファックF171、製品名、DIC製)を溶解させ、0.1μmのフィルターで濾過することにより、樹脂組成物を調整した。
実施例2で得られたポリイミド前駆体のワニスに、樹脂100重量部に対して、下記構造の0.5重量部換算の下記式で表されるアルコキシシラン化合物1を溶解させ、0.1μmのフィルターで濾過することにより、ポリイミド前駆体樹脂組成物を調整した。
実施例2で得られたポリイミド前駆体のワニスに、樹脂100重量部に対して、下記構造の0.5重量部換算の下記式で表されるアルコキシシラン化合物2を溶解させ、0.1μmのフィルターで濾過することにより、ポリイミド前駆体樹脂組成物を調整した。
実施例2で得られたポリイミド前駆体のワニスに、樹脂100重量部に対して、0.025重量部換算の前記界面活性剤1及び、0.5重量部換算の前記アルコキシシラン化合物1を溶解させ、0.1μmのフィルターで濾過することにより、ポリイミド前駆体樹脂組成物を調整した。
<塗工性:塗工スジの評価>
実施例21~26で得られた樹脂組成物を、無アルカリガラス基板(サイズ37×47mm、厚さ0.7mm)上にバーコーターを用いて、キュア後膜厚15μmになるように塗工を行った。そして、室温にて10分放置したのち、塗膜に塗工スジが発生していないか目視で確認した。塗工スジの本数は、3回塗工を行い、平均値を用いた。下記基準で評価を行った。
◎:幅1mm以上、長さ1mm以上の連続した塗工スジ0本(塗工スジの評価「優良」)
○:塗工スジ1,2本(塗工スジの評価「良好」)
△:塗工スジ3-5本(塗工スジの評価「可」)
塗工スジの評価で得られた塗膜が形成されたガラス基板を用いて、キュア路内の酸素濃度をそれぞれ10ppm、100ppm、2000ppmにそれぞれ調整し、380℃60分間でキュアした、厚み15μmのポリイミド膜を、日本電色工業(株)製(Spectrophotometer:SE600)にてD65光源を用い、黄色度(YI値)を測定した。そして、YI値のキュア時酸素濃度依存性を下記基準で評価した。
以上のようにして各項目について評価した結果を表5に示す。
表5から明らかなように、樹脂組成物に界面活性剤及び/またはアルコキシシラン化合物を添加した実施例23~27では、添加していない実施例21に比べて、樹脂組成物の塗工時スジが2本以下であり、ポリイミド樹脂膜の黄色度の硬化時酸素濃度依存性が低いことを同時に満たすことが確認された。
0.001質量%のNMP溶液とした時の308nmの吸光度が、溶液の厚さ1cmにおいて0.1以上、0.5以下であるアルコキシシラン化合物を含有する。
また、該樹脂組成物を硬化したポリイミド樹脂膜は、支持体との残留応力が-5MPa以上、10MPa以下である。
この結果から、本発明の第一の態様に係る樹脂組成物から得られるポリイミド樹脂膜は、ガラス基板(支持体)との接着性に優れ、レーザー剥離時にパーティクルを生じない樹脂フィルムであることが確認された。
また、以上の実施例から明らかなように、本発明の第二の態様に係るポリイミド前駆体を用いた樹脂組成物は、
(1)保存時の粘度安定性が10%以下
(2)塗工時エッジはじきが15mm以下
であるのを同時にみたす。
また、該樹脂組成物を硬化したポリイミド樹脂膜は、
(3)残留応力が25MPa以下
(4)黄色度が14以下(15μm膜厚)
(5)該ポリイミド樹脂膜上に形成した無機膜のHazeが15以下
であるのを同時にみたす。
該ポリイミド樹脂膜は、
(6)硬化時の酸素濃度を2,000、100、10ppmにすることにより黄色度をさらに低下することができ、
(7)レーザー剥離及び/または剥離層を用いた剥離法により、樹脂膜表裏の低屈折率差、低黄色度を満たすことができる。
そして、該樹脂組成物に界面活性剤及び/またはアルコキシシラン化合物を添加することにより、
(8)樹脂組成物の塗工時スジが2本以下であり、
(9)ポリイミド樹脂膜の黄色度の硬化時酸素濃度依存性が低いこと
を同時にみたす。
この結果から、本発明に係るポリイミド前駆体から得られるポリイミド樹脂膜は、黄色度が小さく、残留応力が低く、機械的物性に優れ、さらに、キュア時の酸素濃度による黄色度への影響が小さい樹脂フィルムであることが確認された。
Claims (32)
- (a)ポリイミド前駆体、(b)有機溶剤、及び(d)アルコキシシラン化合物と、を含有する樹脂組成物であって、
前記樹脂組成物を支持体の表面に塗布した後、前記(a)ポリイミド前駆体をイミド化して得られるポリイミドが示す、支持体との残留応力が-5MPa以上、10MPa以下であり、そして、
前記(d)アルコキシシラン化合物は、0.001質量%のNMP溶液とした時の308nmの吸光度が、溶液の厚さ1cmにおいて0.1以上、0.5以下である、樹脂組成物。 - 前記(a)ポリイミド前駆体において、前記式(5)で示される構造単位と、前記式(6)で示される構造単位とのモル比が、90/10~50/50である、請求項1~4のいずれか1項に記載の樹脂組成物。
- 前記(a)ポリイミド前駆体の分子量1,000未満の分子の含有量が1質量%未満である、請求項6に記載の樹脂組成物。
- 前記(a)ポリイミド前駆体において、前記式(5)で示される構造単位と、式(6)で示される構造単位とのモル比が、90/10~50/50である、請求項6または7に記載の樹脂組成物。
- 前記式(5) で示される構造単位を有するポリイミド前駆体と、前記式(6) で示される構造単位を有するポリイミド前駆体との重量比が90/10~50/50である、請求項9に記載の樹脂組成物。
- 水分量が3000ppm以下である、請求項1~10のいずれか1項に記載の樹脂組成物。
- 前記(b)有機溶剤が、沸点が170~270℃の有機溶剤である、請求項1~11のいずれか1項に記載の樹脂組成物。
- 前記(b)有機溶剤が、20℃における蒸気圧が250Pa以下の有機溶剤である、請求項1~12のいずれか1項に記載の樹脂組成物。
- (c)界面活性剤をさらに含有する、請求項1~14のいずれか1項に記載の樹脂組成物。
- 前記(c)界面活性剤が、フッ素系界面活性剤及びシリコーン系界面活性剤からなる群より選択される1種以上である、請求項15に記載の樹脂組成物。
- 前記(c)界面活性剤が、シリコーン系界面活性剤である、請求項15に記載の樹脂組成物。
- (d)アルコキシシラン化合物をさらに含有する、請求項6~17のいずれか1項に記載の樹脂組成物。
- 請求項1~18のいずれか1項に記載の樹脂組成物を加熱して得られるポリイミド樹脂膜。
- 請求項19に記載のポリイミド樹脂膜を含む、樹脂フィルム。
- 請求項1~18のいずれか1項に記載の樹脂組成物を支持体の表面上に塗布する工程と、
塗布した樹脂組成物を乾燥し、溶媒を除去する工程と、
前記支持体及び前記樹脂組成物を加熱して該樹脂組成物に含まれる樹脂前駆体をイミド化してポリイミド樹脂膜を形成する工程と、
前記ポリイミド樹脂膜を該支持体から剥離する工程と、
を含む、樹脂フィルムの製造方法。 - 前記樹脂組成物を支持体の表面上に塗布する工程に先立って、前記支持体上に剥離層を形成する工程を含む、請求項21に記載の樹脂フィルムの製造方法。
- 前記加熱しポリイミド樹脂膜を形成する工程において、酸素濃度が2000ppm以下である、請求項21に記載の樹脂フィルムの製造方法。
- 前記加熱しポリイミド樹脂膜を形成する工程において、酸素濃度が100ppm以下である、請求項21に記載の樹脂フィルムの製造方法。
- 前記加熱しポリイミド樹脂膜を形成する工程において、酸素濃度が10ppm以下である、請求項21に記載の樹脂フィルムの製造方法。
- 前記ポリイミド樹脂膜を支持体から剥離する工程が、支持体側からレーザーを照射したのち剥離する工程を含む、請求項21に記載の樹脂フィルムの製造方法。
- 前記素子または回路が形成されたポリイミド樹脂膜を支持体から剥離する工程が、該ポリイミド樹脂膜/剥離層/支持体を含む構成体から該ポリイミド樹脂膜を剥離する工程を含む、請求項21に記載の樹脂フィルムの製造方法。
- 支持体と、該支持体の表面上に形成された、請求項6~19のいずれか1項に記載の樹脂組成物の硬化物であるポリイミド樹脂膜とを含む、積層体。
- 請求項6~18のいずれか1項に記載の樹脂組成物を支持体の表面上に塗布する工程と、
該支持体及び該樹脂組成物を加熱して該樹脂組成物に含まれる該樹脂前駆体をイミド化してポリイミド樹脂膜を形成する工程と、を含む、積層体の製造方法。 - 請求項6~18のいずれか1項に記載の樹脂組成物を支持体に塗布、加熱しポリイミド樹脂膜を形成する工程と、
前記ポリイミド樹脂膜上に素子または回路を形成する工程と、
前記素子または回路が形成されたポリイミド樹脂膜を支持体から剥離する各工程と、
を含む、ディスプレイ基板の製造方法。 - 請求項30に記載のディスプレイ基板の製造方法により形成された、ディスプレイ基板。
- 請求項19記載のポリイミドフィルムと、SiNと、SiO2と、をこの順で積層してなる積層体。
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Also Published As
Publication number | Publication date |
---|---|
KR101994059B1 (ko) | 2019-06-27 |
TW201610021A (zh) | 2016-03-16 |
JP6648195B2 (ja) | 2020-02-14 |
KR20180100732A (ko) | 2018-09-11 |
JP6670238B2 (ja) | 2020-03-18 |
CN111808420A (zh) | 2020-10-23 |
JP2018145440A (ja) | 2018-09-20 |
KR101992525B1 (ko) | 2019-06-24 |
JPWO2016010003A1 (ja) | 2017-04-27 |
CN111808420B (zh) | 2021-09-28 |
KR20190071842A (ko) | 2019-06-24 |
KR20160132092A (ko) | 2016-11-16 |
US20170165879A1 (en) | 2017-06-15 |
KR102312462B1 (ko) | 2021-10-13 |
CN106661326B (zh) | 2020-04-21 |
CN106661326A (zh) | 2017-05-10 |
JP7152381B2 (ja) | 2022-10-12 |
TWI565765B (zh) | 2017-01-11 |
JP2020037704A (ja) | 2020-03-12 |
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