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WO2009013315A3 - Halbleitersubstrat mit durchkontaktierung und verfahren zu seiner herstellung - Google Patents

Halbleitersubstrat mit durchkontaktierung und verfahren zu seiner herstellung Download PDF

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Publication number
WO2009013315A3
WO2009013315A3 PCT/EP2008/059662 EP2008059662W WO2009013315A3 WO 2009013315 A3 WO2009013315 A3 WO 2009013315A3 EP 2008059662 W EP2008059662 W EP 2008059662W WO 2009013315 A3 WO2009013315 A3 WO 2009013315A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact
production
semiconductor substrate
layer
metallization
Prior art date
Application number
PCT/EP2008/059662
Other languages
English (en)
French (fr)
Other versions
WO2009013315A2 (de
Inventor
Franz Schrank
Martin Schrems
Jochen Kraft
Original Assignee
Austriamicrosystems Ag
Franz Schrank
Martin Schrems
Jochen Kraft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems Ag, Franz Schrank, Martin Schrems, Jochen Kraft filed Critical Austriamicrosystems Ag
Priority to US12/670,303 priority Critical patent/US8378496B2/en
Publication of WO2009013315A2 publication Critical patent/WO2009013315A2/de
Publication of WO2009013315A3 publication Critical patent/WO2009013315A3/de

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Die Durchkontaktierung des Substrates wird durch eine Kontaktlochfüllung (4) einer Halbleiterschicht (11) und eine Metallisierung (17) einer Ausnehmung (16) in einer rückseitigen Halbleiterschicht (13) gebildet, wobei die Halbleiterschichten durch eine vergrabene Isolationsschicht (12) voneinander getrennt sind, an deren Schichtlage die Kontaktlochfüllung beziehungsweise die Metallisierung jeweils endet.
PCT/EP2008/059662 2007-07-24 2008-07-23 Halbleitersubstrat mit durchkontaktierung und verfahren zu seiner herstellung WO2009013315A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/670,303 US8378496B2 (en) 2007-07-24 2008-07-23 Semiconductor substrate with interlayer connection and method for production of a semiconductor substrate with interlayer connection

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007034306.1 2007-07-24
DE102007034306A DE102007034306B3 (de) 2007-07-24 2007-07-24 Halbleitersubstrat mit Durchkontaktierung und Verfahren zur Herstellung eines Halbleitersubstrates mit Durchkontaktierung

Publications (2)

Publication Number Publication Date
WO2009013315A2 WO2009013315A2 (de) 2009-01-29
WO2009013315A3 true WO2009013315A3 (de) 2009-04-02

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PCT/EP2008/059662 WO2009013315A2 (de) 2007-07-24 2008-07-23 Halbleitersubstrat mit durchkontaktierung und verfahren zu seiner herstellung

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US (1) US8378496B2 (de)
DE (1) DE102007034306B3 (de)
WO (1) WO2009013315A2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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