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TWI502705B - 晶片封裝體及其製造方法 - Google Patents

晶片封裝體及其製造方法 Download PDF

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Publication number
TWI502705B
TWI502705B TW099116113A TW99116113A TWI502705B TW I502705 B TWI502705 B TW I502705B TW 099116113 A TW099116113 A TW 099116113A TW 99116113 A TW99116113 A TW 99116113A TW I502705 B TWI502705 B TW I502705B
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TW
Taiwan
Prior art keywords
heavily doped
chip package
doped regions
conductive
semiconductor wafer
Prior art date
Application number
TW099116113A
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English (en)
Other versions
TW201142999A (en
Inventor
Chien Hung Liu
Cheng Te Chou
Original Assignee
Xintec Inc
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Publication date
Application filed by Xintec Inc filed Critical Xintec Inc
Publication of TW201142999A publication Critical patent/TW201142999A/zh
Application granted granted Critical
Publication of TWI502705B publication Critical patent/TWI502705B/zh

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Description

晶片封裝體及其製造方法
本發明係有關於一種晶片封裝體，特別有關於一種晶圓級晶片封裝體及其製造方法。
目前業界針對晶片的封裝已發展出一種晶圓級封裝技術，於晶圓級封裝完成之後，再進行切割步驟，以分離形成晶片封裝體。其中晶片封裝體內的重佈線路圖案係以和金屬接墊直接接觸為主，因此，在重佈線路圖案的製程上，必須配合金屬接墊的設計。
因此，業界亟需一種新穎的晶片封裝體及其製作方法，以克服上述問題。
本發明之實施例係提供一種晶片封裝體，包括：一半導體基板，具有相反之第一表面與第二表面，以及至少一接墊區與至少一元件區；複數個導電墊結構，位於該半導體基板之第一表面，且位於該半導體基板之該接墊區上；複數個相互隔離之重摻雜區，設於該些導電墊結構下方，且與該些導電墊結構電性連接；以及，複數個導電凸塊，設於該些重摻雜區下方，且經由該些重摻雜區與該些導電墊結構形成電性連接。
本發明之實施例更提供一種晶片封裝體的製造方法，包括：提供一半導體晶圓，具有相反之第一表面與第二表面，該半導體晶圓包括至少一接墊區與至少一元件區，以及複數個導電墊結構，位於該第一表面之該接墊區上；形成複數個相互隔離之重摻雜區於該些導電墊結構下方，其中該些重摻雜區和該些導電墊結構形成電性連接；以及，形成複數個導電凸塊於該些重摻雜區之下方，其中該些導電凸塊經由該些重摻雜區與該些導電墊結構形成電性連接。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
以下以實施例並配合圖式詳細說明本發明，在圖式或說明書描述中，相似或相同之部分係使用相同之圖號。且在圖式中，實施例之形狀或是厚度可擴大，以簡化或是方便標示。再者，圖式中各元件之部分將以描述說明之，值得注意的是，圖中未繪示或描述之元件，為所屬技術領域中具有通常知識者所知的形式。另外，特定之實施例僅為揭示本發明使用之特定方式，其並非用以限定本發明。
本發明係以一製作CMOS影像感測晶片封裝體為例，然而微機電晶片封裝體(MEMS chip package)或其他半導體晶片亦可適用。亦即，可以了解的是，在本發明之晶片封裝體的實施例中，其可應用於各種包含主動元件或被動元件(active or passive elements)、數位電路或類比電路(digital or analog circuits)等積體電路的電子元件(electronic components)，例如是有關於光電元件(opto electronic devices)、微機電系統(Micro Electro Mechanical System;MEMS)、微流體系統(micro fluidic systems)、或利用熱、光線及壓力等物理量變化來測量的物理感測器(Physical Sensor)，或是CMOS影像感測器等。特別是可選擇使用晶圓級封裝(wafer scale package;WSP)製程對影像感測元件、發光二極體(light-emitting diodes;LEDs)、太陽能電池(solar cells)、射頻元件(RF circuits)、加速計(accelerators)、陀螺儀(gyroscopes)、微制動器(micro actuators)、表面聲波元件(surface acoustic wave devices)、壓力感測器(process sensors)或噴墨頭(ink printer heads)等晶片進行封裝。
其中上述晶圓級封裝製程主要係指在晶圓階段完成封裝步驟後，再予以切割成獨立的封裝體，然而，在一特定實施例中，例如將已分離之半導體晶片重新分布在一承載晶圓上，再進行封裝製程，亦可稱之為晶圓級封裝製程。另外，上述晶圓級封裝製程亦適用於藉堆疊(stack)方式安排具有積體電路之多片晶圓，以形成多層積體電路(multi-layer integrated circuit devices)之晶片封裝體。
本發明的特徵之一係藉由重摻雜區達成導電墊結構與導電凸塊之間的電性連接，而不以重佈線路圖案與導電墊結構的直接接觸為必要。在一實施例中，上述重摻雜區係直接設置於導電墊結構下方的半導體基底。在另一實施例中，上述重摻雜區亦可設置在一額外的承載基板中。
請參閱第1至2圖，其係顯示依據本發明之一實施例，於半導體晶圓上製作晶片封裝體之製造方法的剖面示意圖。在本實施例中重摻雜區係設置於導電墊結構下方的半導體基底。如第1圖及第2圖所示，首先提供一半導體晶圓300，一般為矽基板，其包括一絕緣層301，可藉由熱氧化或化學氣相沈積法等半導體製程形成，或者在一實施例中可採用一絕緣層上覆矽基板(SOI)，或者藉由晶圓接合製程(wafer bonding)結合兩片晶圓而成，其中一片晶圓具有絕緣層。其次，半導體晶圓定義有多個元件區100A，圍繞元件區100A者為周邊接墊區100B。接續，於半導體晶圓300中形成連接至絕緣層301之絕緣壁305以隔離複數個區域以作為重摻雜區300B。以及於元件區100A製作半導體元件302，例如影像感測器元件或是微機電結構，而覆蓋上述半導體晶圓300及半導體元件302者為層間介電層303(IMD)，一般可選擇低介電係數(low k)的絕緣材料，例如多孔性氧化層。接著於周邊接墊區100B的層間介電層303中製作複數個導電墊結構304。上述絕緣壁和絕緣層可以為絕緣材料例如一般的氧化矽，或是由絕緣空間構成，例如是氣隙層或真空隔離層。上述導電墊結構304較佳可以由銅(copper;Cu)、鋁(aluminum;Al)或其它合適的金屬材料所製成。其中值得注意的是，上述半導體晶圓於周邊接墊區100B之位置包括多個重摻雜區300B，其電性連接導電墊結構304並由絕緣壁305所隔離，重摻雜區300B可透過例如擴散或離子植入步驟，摻雜高濃度的離子如摻雜劑量為1E14~6E15atoms/cm2 的磷或砷等形成，以構成一導電路徑。在一實施例中，一個重摻雜區係對應一個導電墊結構，然而，在多個導電墊結構作為共同輸出的情形下，可由一個重摻雜區對應多個導電墊結構。
此外，半導體晶圓300在晶圓廠產出時一般係覆蓋有一晶片保護層306(passivation layer)，同時為將晶片內的元件電性連接至外部電路，傳統上晶圓廠會事先定義晶片保護層306以形成複數個暴露出導電墊結構304的開口306h。
接著，如第3A圖所示，提供封裝層500以與半導體晶圓接合，其中為方便說明起見，上述半導體晶圓300係僅揭示導電墊結構304、絕緣壁305和絕緣層301。封裝層500例如為玻璃等透明基板、另一空白矽晶圓、或是另一含有積體電路元件的晶圓。在一實施例中，可藉由間隔層310分開封裝層500與半導體基板，同時形成由間隔層310所圍繞的空腔316。間隔層310可以為密封膠，或是感光絕緣材料，例如環氧樹脂(epoxy)、阻銲材料(solder mask)等。此外間隔層310可先形成於半導體晶圓300上，之後再藉由黏著層與相對之封裝層500接合，反之，亦可將間隔層310先形成於封裝層500上，之後再藉由黏著層與相對之半導體晶圓300接合。
請參閱第3B圖，可以封裝層500為承載基板，自半導體晶圓背面300a進行蝕刻，例如藉由非等向性蝕刻製程去除部份矽基板和絕緣層301，於半導體晶圓300中形成暴露出重摻雜區300B之連通開口300h。值得注意的是，此些開口300h係分別對應各周邊接墊區100B中由絕緣壁305隔離之重摻雜區300B。
然後如第3C圖所示，於開口300h內形成露出重摻雜區300B之絕緣層320，例如可先藉由熱氧化法或電漿化學氣相沈積法，形成氧化矽層於開口300h內，其並可延伸至半導體晶圓300的背面300a，接著，除去開口300h之底部上的絕緣層，例如藉由微影製程定義開口300h之底部以暴露出重摻雜區300B。
接著，如第3D圖所示，於開口300h內形成導電圖案330。在此實施例中，導電圖案330係作為重佈線路圖案，因此其除了形成於開口300h之側壁上，還進一步延伸至半導體晶圓下表面300a和重摻雜區300B上。重佈線路圖案330之形成方式可包括物理氣相沉積、化學氣相沉積、電鍍、或無電鍍等。重佈線路圖案330之材質可為金屬材質，例如銅、鋁、金、或前述之組合。重佈線路圖案330之材質還可包括導電氧化物，例如氧化銦錫(ITO)、氧化銦鋅(IZO)、或前述之組合。在一實施例中，係於整個半導體晶圓300上順應性形成一導電層，接著將導電層圖案化為例如第3D圖所示之重佈線路圖案分佈。
接續，請參閱第3E圖，其顯示保護層340的形成方式。在本發明實施例中，保護層340例如為阻焊膜(solder mask)，可經由塗佈防銲材料的方式於半導體晶圓背面300a處形成保護層340。然後，對保護層340進行圖案化製程，以形成暴露部分重佈線路圖案330的複數個終端接觸開口。然後，於終端接觸開口處形成銲球下金屬層(Under Bump Metallurgy,UBM)和導電凸塊350。舉例而言，由導電材料構成之銲球下金屬層(UBM)可以是金屬或金屬合金，例如鎳層、銀層、鋁層、銅層或其合金；或者是摻雜多晶矽、單晶矽、或導電玻璃層等材料。此外，耐火金屬材料例如鈦、鉬、鉻、或是鈦鎢層，亦可單獨或和其他金屬層結合。而在一特定實施例中，鎳/金層可以局部或全面性的形成於金屬層表面。其中導電凸塊350可藉由重佈線路圖案330電性連接重摻雜區300B，而非導電墊結構304。在本發明實施例中，導電凸塊350係用以傳遞元件302中的輸入/輸出(I/O)信號、接地(ground)信號或電源(power)信號。接著，沿著周邊接墊區的切割線SC將半導體晶圓分割，即可形成複數個晶片封裝體。
其中，在週邊接墊區上之重摻雜區300B，係由絕緣壁305隔離，因此重佈線路圖案330可直接和重摻雜區300B電性接觸，而不以和導電墊結構304直接接觸為必要。此外由於週邊接墊區上之重摻雜區300B其區域範圍可較導電墊結構為寬，因此開口300h可有較高的對準容許誤差。
另如第3F圖所示，開口300h的深度可以超過絕緣層301，因此開口內的重佈線路圖案330可以深入重摻雜區300B中，或甚至抵達導電墊結構，以增加接觸面積。亦即絕緣層301可位於該些開口300h的底部或其下方。
接下來，請參閱第4至5圖，其係顯示依據本發明之另一實施例，於半導體晶圓上製作晶片封裝體之製造方法的剖面示意圖。在本實施例中，重摻雜區係設置於一承載基板中。如第4圖及第5圖所示，首先提供一半導體晶圓，一般為矽晶圓300，半導體晶圓包括一上表面300a及一下表面300b。其次，半導體晶圓定義有複數個對應晶片的切割區和複數個基板，每個基板包括至少一元件區100A，圍繞元件區100A者為周邊接墊區100B。接續，於上表面300a處之元件區100A製作半導體元件302，例如影像感測器元件或是微機電結構，而覆蓋上述半導體晶圓300及半導體元件302者為層間介電層303(IMD)，一般可選擇低介電係數(low k)的絕緣材料，例如多孔性氧化層。接著於周邊接墊區100B的層間介電層303中製作複數個導電墊結構304。上述導電墊結構304較佳可以由銅(copper;Cu)、鋁(aluminum;Al)或其它合適的金屬材料所製成。
此外，半導體晶圓300在晶圓廠產出時一般係覆蓋有一晶片保護層306(passivation layer)，同時為將晶片內的元件電性連接至外部電路，傳統上晶圓廠會事先定義晶片保護層306以形成複數個暴露出導電墊結構304的開口306h。
接著，如第6A圖所示，提供一半導體晶圓做為一承載基板，如空白或含有電路結構之矽晶圓600，包括一上表面600a及一下表面600b。其次，自上表面600a處去除部分矽晶圓600以形成複數個開口600h。然後如第6B圖所示，填入絕緣層610於開口600h中，例如是高分子材料，如聚醯亞胺樹脂(polyimide)。或者，藉由半導體製程形成絕緣材料如氧化矽層等，例如透過熱氧化或是電漿化學氣相沈積法全面性形成氧化矽層，然後去除矽晶圓600的上表面600a及/或下表面600b上的氧化矽層。其中值得注意的是，上述矽晶圓600係為重摻雜基板，可透過例如擴散或離子植入步驟，摻雜高濃度的離子如摻雜劑量為1E14~6E15atoms/cm2 的磷或砷等形成，以構成一導電路徑。在一實施例中，一個重摻雜區係對應一個導電墊結構，然而，在多個導電墊結構作為共同輸出的情形下，可由一個重摻雜區對應多個導電墊結構。
請參閱第7A圖，接著，將上述具有半導體元件的矽基板300接合至承載基板600上，舉例而言，可將矽基板300翻轉後由上表面300a接合至承載基板600的上表面600a上，使得半導體元件302遠離承載基板600，而導電墊結構304則面向承載基板600的上表面600a接合。其中為方便說明起見，上述矽基板300係僅揭示導電墊結構304、半導体元件302、和層間介電層303。
之後，請參閱第7B圖，藉由例如是蝕刻(etching)、銑削(milling)、磨削(grinding)或研磨(polishing)的方式，從矽基板300的下表面300b處如虛線所示，薄化至一適當的厚度，以半導體元件為影像感測器為例，上述薄化後的矽基板300係被薄化至一可允許足夠的光通過的厚度，使得影像感測器元件302可感應此入射的光，進而產生訊號，此時矽基板300的下表面300b係作為入光面。
如第7C圖所示，在完成薄化步驟後，提供封裝層500以與半導體晶圓300的下表面300b接合。封裝層500例如為玻璃等透明基板、另一空白矽晶圓、或是另一含有積體電路元件的晶圓。在一實施例中，可藉由間隔層310分開封裝層500與半導體基板，同時形成由間隔層310所圍繞的空腔316。間隔層310可以為密封膠，或是感光絕緣材料，例如環氧樹脂(epoxy)、阻銲材料(solder mask)等。此外間隔層310可先形成於矽基板的下表面300b上，之後再藉由黏著層與相對之封裝層500接合，反之，亦可將間隔層310先形成於封裝層500上，之後再藉由黏著層與相對之矽基板下表面300b接合。
請參閱第7D圖，在一選擇性(optional)步驟中，可以封裝層500為承載基板，對另一承載基板之下表面600b實施一薄化步驟，例如以化學機械研磨製程研磨承載基背面600b，以便於後續暴露出絕緣層610表面，此時，絕緣層610係構成一絕緣壁，可分別隔離承載基板600中對應周邊接墊區100B內的重摻雜區600B。
然後形成保護層640，在本發明實施例中，保護層640例如為阻焊膜(solder mask)，可經由塗佈防銲材料的方式於承載基板之下表面600b處形成保護層640。然後，對保護層640進行圖案化製程，以形成暴露部分承載基板下表面600b的複數個接觸開口。然後，於接觸開口處形成銲球下金屬層(Under Bump Metallurgy,UBM)和導電凸塊650。舉例而言，由導電材料構成之銲球下金屬層(UBM)可以是金屬或金屬合金，例如鎳層、銀層、鋁層、銅層或其合金；或者是摻雜多晶矽、單晶矽、或導電玻璃層等材料。此外，耐火金屬材料例如鈦、鉬、鉻、或是鈦鎢層，亦可單獨或和其他金屬層結合。而在一特定實施例中，亦可透過重佈線路圖案的形成，重新分布導電凸塊650的位置。
在本發明實施例中，導電凸塊650係用以傳遞元件302中的輸入/輸出(I/O)信號、接地(ground)信號或電源(power)信號。接著，沿著周邊接墊區的切割線SC將上述半導體晶圓分割，即可形成複數個晶片封裝體。
其中，承載基板600於對應週邊接墊區之重摻雜區600B，係由絕緣壁610隔離，因此導電凸塊650可直接或透過重佈線路圖案和重摻雜區600B電性接觸，而不以和導電墊結構304直接接觸為必要。此外由於承載基板600於對應週邊接墊區之重摻雜區600B其區域範圍可較導電墊結構為寬，因此接觸開口可有較高的對準容許誤差。
第8A至8D圖係顯示依據本發明之另一實施例中，形成晶片封裝體之製造方法的剖面示意圖。其中與前述實施例之主要差異在於承載基板600為一絕緣層上覆矽基板(SOI)，其包括一絕緣層630。接續，於承載基板600中形成連接至絕緣層630之絕緣壁610以隔離承載基板中對應該些周邊接墊區100B內之重摻雜區600B。上述絕緣壁和絕緣層一般可為氧化矽材料。其中重摻雜區600B可藉由離子植入步驟完成，其可於絕緣壁610製程之前或之後實施。然後如第8B圖所示，自半導體晶圓300的背面處300b除去部分半導體晶圓的厚度。接著如第8C-8D圖所示，覆蓋封裝層500後，薄化承載基板600，並依序完成保護層640和導電凸塊650的製作。然而在另一實施例中，於薄化承載基板600的過程中，絕緣層630亦可保留，不必去除。在其他實施例中，上述絕緣層630，係可藉由熱氧化或化學氣相沈積法等半導體製程形成，或者在一實施例中可藉由晶圓接合製程(wafer bonding)結合兩片晶圓而成，其中一片晶圓具有絕緣層。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
300．．．半導體晶圓
300B．．．重摻雜區
301．．．絕緣層
100A．．．元件區
100B．．．周邊接墊區
302．．．半導體元件
304．．．導電墊結構
305．．．絕緣壁
500．．．封裝層
310．．．間隔層
316．．．空腔
320．．．絕緣層
330．．．重佈線路圖案
340．．．保護層
350．．．導電凸塊
600．．．承載晶圓
600B．．．重摻雜區
630．．．絕緣層
610．．．絕緣壁
500．．．封裝層
640．．．保護層
650．．．導電凸塊
第1-2圖係顯示依據本發明之一實施例中，形成半導體晶片之製造方法的剖面示意圖。
第3A-3F圖係顯示依據本發明之另一實施例中，形成承載基板之製造方法的剖面示意圖。
第4-5圖係顯示依據本發明之另一實施例中，形成晶片封裝體之製造方法的剖面示意圖。
第6A-6B圖係顯示依據本發明之另一實施例中，形成晶片封裝體之製造方法的剖面示意圖。
第7A-7D圖係顯示依據本發明之另一實施例中，形成晶片封裝體之製造方法的剖面示意圖。
第8A-8D圖係顯示依據本發明之另一實施例中，形成晶片封裝體之製造方法的剖面示意圖。
300．．．半導體晶圓
300B．．．重摻雜區
301．．．絕緣層
305．．．絕緣壁
304．．．導電墊結構
500．．．封裝層
310．．．間隔層
316．．．空腔
320．．．絕緣層
330．．．重佈線路圖案
340．．．保護層
350．．．導電凸塊

Claims (17)

  1. 一種晶片封裝體，包括：一半導體基板，具有相反之第一表面與第二表面，以及至少一接墊區與至少一元件區；複數個導電墊結構，位於該半導體基板之第一表面，且位於該半導體基板之該接墊區上；複數個相互隔離之重摻雜區，設於該些導電墊結構下方，且與該些導電墊結構電性連接，其中該些重摻雜區係設置於該半導體基板中；複數個開口，由該半導體基板之第二表面深入該半導體基板中以暴露出該些重摻雜區；以及一導電圖案，位於該些開口內並電性接觸該些重摻雜區。
  2. 如申請專利範圍第1項所述之晶片封裝體，其中該些重摻雜區之間係由一絕緣壁隔離。
  3. 如申請專利範圍第2項所述之晶片封裝體，其中該些重摻雜區下方更包括一絕緣層，且該絕緣壁係延伸至該絕緣層。
  4. 如申請專利範圍第1項所述之晶片封裝體，其中該重摻雜區寬於該導電墊結構。
  5. 如申請專利範圍第1項所述之晶片封裝體，其中該導電圖案係深入該重摻雜區。
  6. 如申請專利範圍第1項所述之晶片封裝體，其中該些開口內之導電圖案與該半導體基板之間係由一絕緣層所隔離。
  7. 如申請專利範圍第1項所述之晶片封裝體，更包括複數個導電凸塊，設於該些重摻雜區下方，且經由該些重摻雜區與該些導電墊結構形成電性連接。
  8. 如申請專利範圍第1項所述之晶片封裝體，更包括：一封裝層，接合至該半導體基板；以及一間隔層，設置於該半導體基板與該封裝層之間，且圍繞該元件區形成一空腔。
  9. 一種晶片封裝體的製造方法，包括：提供一半導體晶圓，具有相反之第一表面與第二表面，該半導體晶圓包括至少一接墊區與至少一元件區，以及複數個導電墊結構，位於該第一表面之該接墊區上；形成複數個相互隔離之重摻雜區於該些導電墊結構下方，其中該些重摻雜區和該些導電墊結構形成電性連接，其中該些重摻雜區係形成於該半導體晶圓中；形成複數個開口，由該半導體晶圓之第二表面深入該半導體晶圓中以暴露出該些重摻雜區；以及形成一導電圖案於該些開口內並電性接觸該些重摻雜區。
  10. 如申請專利範圍第9項所述之晶片封裝體的製造方法，更包括於該些重摻雜區之間形成一絕緣壁而予以隔離。
  11. 如申請專利範圍第10項所述之晶片封裝體的製造方法，更包括於該些重摻雜區下方形成一絕緣層，且該絕緣壁係延伸至該絕緣層。
  12. 如申請專利範圍第9項所述之晶片封裝體的製造方法，其中該重摻雜區寬於該導電墊結構。
  13. 如申請專利範圍第9項所述之晶片封裝體的製造方法，其中該導電圖案係深入該重摻雜區。
  14. 如申請專利範圍第9項所述之晶片封裝體的製造方法，更包括於該些開口內形成一絕緣層以隔離該導電圖案與該半導體晶圓。
  15. 如申請專利範圍第9項所述之晶片封裝體的製造方法，更包括：將一封裝層接合至該半導體晶圓，且該封裝層與該半導體晶圓之間具有一間隔層所圍繞之空腔。
  16. 如申請專利範圍第9項所述之晶片封裝體的製造方法，更包括切割該半導體晶圓以形成複數個晶片封裝體。
  17. 如申請專利範圍第9項所述之晶片封裝體的製造方法，更包括形成複數個導電凸塊於該些重摻雜區之下方，其中該些導電凸塊經由該些重摻雜區與該些導電墊結構形成電性連接。
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