Nothing Special   »   [go: up one dir, main page]

WO2009057692A1 - 太陽電池 - Google Patents

太陽電池 Download PDF

Info

Publication number
WO2009057692A1
WO2009057692A1 PCT/JP2008/069754 JP2008069754W WO2009057692A1 WO 2009057692 A1 WO2009057692 A1 WO 2009057692A1 JP 2008069754 W JP2008069754 W JP 2008069754W WO 2009057692 A1 WO2009057692 A1 WO 2009057692A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
photoelectric conversion
conversion section
side electrode
solar cell
Prior art date
Application number
PCT/JP2008/069754
Other languages
English (en)
French (fr)
Inventor
Takeyuki Sekimoto
Shigeo Yata
Atsushi Saita
Original Assignee
Sanyo Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co., Ltd. filed Critical Sanyo Electric Co., Ltd.
Priority to JP2009539103A priority Critical patent/JP4940309B2/ja
Priority to EP08845475.6A priority patent/EP2207209A4/en
Priority to CN2008801096606A priority patent/CN101809759B/zh
Priority to US12/679,150 priority patent/US20100282297A1/en
Publication of WO2009057692A1 publication Critical patent/WO2009057692A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0549—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising spectrum splitting means, e.g. dichroic mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　太陽電池が、受光面電極層２と、裏面電極層４と、受光面電極層２と裏面電極層４との間に設けられた積層体３とを備え、積層体３は、第１光電変換部３１と、第１光電変換部３１を透過した光の一部を第１光電変換部３１側に反射する反射層３２とを含み、反射層３２は、ＭｇＺｎＯからなるＭｇＺｎＯ層３２ｂと、ＭｇＺｎＯ層３２ｂと第１光電変換部３１との間に介挿されたコンタクト層３２ａとを有する。
PCT/JP2008/069754 2007-10-30 2008-10-30 太陽電池 WO2009057692A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009539103A JP4940309B2 (ja) 2007-10-30 2008-10-30 太陽電池
EP08845475.6A EP2207209A4 (en) 2007-10-30 2008-10-30 SOLAR CELL
CN2008801096606A CN101809759B (zh) 2007-10-30 2008-10-30 太阳能电池
US12/679,150 US20100282297A1 (en) 2007-10-30 2008-10-30 Solar cell

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-282519 2007-10-30
JP2007282519 2007-10-30
JP2008-074493 2008-03-21
JP2008074493 2008-03-21

Publications (1)

Publication Number Publication Date
WO2009057692A1 true WO2009057692A1 (ja) 2009-05-07

Family

ID=40591076

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069754 WO2009057692A1 (ja) 2007-10-30 2008-10-30 太陽電池

Country Status (6)

Country Link
US (1) US20100282297A1 (ja)
EP (1) EP2207209A4 (ja)
JP (1) JP4940309B2 (ja)
KR (1) KR101098152B1 (ja)
CN (1) CN101809759B (ja)
WO (1) WO2009057692A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101958354A (zh) * 2009-07-17 2011-01-26 三洋电机株式会社 太阳能电池模块和太阳能电池模块的制造方法
CN102214793A (zh) * 2010-12-31 2011-10-12 友达光电股份有限公司 堆叠式太阳能电池模块
CN102290452A (zh) * 2010-04-26 2011-12-21 乐金显示有限公司 反射电极和光电元件
TWI799118B (zh) * 2022-01-28 2023-04-11 勝慧科技有限公司 雙能區光電效應電極耦合的雙異質接面太陽能電池及其製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101971356A (zh) * 2008-04-25 2011-02-09 株式会社爱发科 太阳能电池
TWI430491B (zh) * 2010-12-31 2014-03-11 Au Optronics Corp 堆疊式太陽能電池模組
CN102760777A (zh) * 2011-04-29 2012-10-31 无锡尚德太阳能电力有限公司 太阳电池、太阳电池组件及其制备方法
CN102694066B (zh) * 2012-04-01 2015-03-11 成都旭双太阳能科技有限公司 一种提高太阳能电池板光电转换效率的方法
US10840400B2 (en) 2013-08-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Photovoltaic device with back reflector
JP2015060847A (ja) * 2013-09-17 2015-03-30 三洋電機株式会社 太陽電池
CN104637970B (zh) 2015-03-03 2018-03-06 京东方科技集团股份有限公司 阵列基板及其制作方法、x射线平板探测器、摄像系统
CN107681020A (zh) * 2017-09-26 2018-02-09 南开大学 一种提高平面硅异质结太阳电池长波长光响应的方法
CN108777724A (zh) * 2018-03-16 2018-11-09 广东欧珀移动通信有限公司 盖板组件、壳体组件及电子设备

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074685A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 光起電力装置
JPS6377167A (ja) * 1986-09-19 1988-04-07 Sanyo Electric Co Ltd 積層型光起電力装置
JPH02237172A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 多層構造太陽電池
JPH04127580A (ja) * 1990-09-19 1992-04-28 Hitachi Ltd 多接合型アモルファスシリコン系太陽電池
JP2000323733A (ja) * 1999-03-05 2000-11-24 Matsushita Electric Ind Co Ltd 太陽電池
JP2000332273A (ja) * 1999-05-25 2000-11-30 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
JP2002261308A (ja) * 2001-03-01 2002-09-13 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュール
JP2004259549A (ja) * 2003-02-25 2004-09-16 Rohm Co Ltd 透明電極膜
JP2004281938A (ja) * 2003-03-18 2004-10-07 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
JP2004311968A (ja) * 2003-03-26 2004-11-04 Canon Inc 積層型光起電力素子及びその製造方法
JP2005093939A (ja) * 2003-09-19 2005-04-07 Mitsubishi Heavy Ind Ltd 集積型タンデム接合太陽電池及び集積型タンデム接合太陽電池の製造方法
JP2005135987A (ja) * 2003-10-28 2005-05-26 Kaneka Corp 積層型光電変換装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5569332A (en) * 1995-08-07 1996-10-29 United Solar Systems Corporation Optically enhanced photovoltaic back reflector
US6259016B1 (en) * 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell
TW557368B (en) * 2001-06-29 2003-10-11 Jsr Corp Anti-reflection film laminated body and method of manufacturing the laminated body
JP4222500B2 (ja) * 2002-04-02 2009-02-12 株式会社カネカ シリコン系薄膜光電変換装置
JP2005039107A (ja) * 2003-07-17 2005-02-10 Sharp Corp 酸化物半導体レーザ素子
EP1650812B2 (en) * 2003-07-24 2019-10-23 Kaneka Corporation Method for making a silicon based thin film solar cell
SE0400631D0 (sv) * 2004-03-11 2004-03-11 Forskarpatent I Uppsala Ab Thin film solar cell and manufacturing method
JP2006120737A (ja) * 2004-10-19 2006-05-11 Mitsubishi Heavy Ind Ltd 光電変換素子
JP4959127B2 (ja) * 2004-10-29 2012-06-20 三菱重工業株式会社 光電変換装置及び光電変換装置用基板
JP2006310694A (ja) * 2005-05-02 2006-11-09 Kaneka Corp 集積化多接合薄膜光電変換装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074685A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 光起電力装置
JPS6377167A (ja) * 1986-09-19 1988-04-07 Sanyo Electric Co Ltd 積層型光起電力装置
JPH02237172A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 多層構造太陽電池
JPH04127580A (ja) * 1990-09-19 1992-04-28 Hitachi Ltd 多接合型アモルファスシリコン系太陽電池
JP2000323733A (ja) * 1999-03-05 2000-11-24 Matsushita Electric Ind Co Ltd 太陽電池
JP2000332273A (ja) * 1999-05-25 2000-11-30 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
JP2002261308A (ja) * 2001-03-01 2002-09-13 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュール
JP2004259549A (ja) * 2003-02-25 2004-09-16 Rohm Co Ltd 透明電極膜
JP2004281938A (ja) * 2003-03-18 2004-10-07 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
JP2004311968A (ja) * 2003-03-26 2004-11-04 Canon Inc 積層型光起電力素子及びその製造方法
JP2005093939A (ja) * 2003-09-19 2005-04-07 Mitsubishi Heavy Ind Ltd 集積型タンデム接合太陽電池及び集積型タンデム接合太陽電池の製造方法
JP2005135987A (ja) * 2003-10-28 2005-05-26 Kaneka Corp 積層型光電変換装置及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101958354A (zh) * 2009-07-17 2011-01-26 三洋电机株式会社 太阳能电池模块和太阳能电池模块的制造方法
CN102290452A (zh) * 2010-04-26 2011-12-21 乐金显示有限公司 反射电极和光电元件
KR101286552B1 (ko) * 2010-04-26 2013-07-16 엘지디스플레이 주식회사 반사전극 및 광전소자
CN102214793A (zh) * 2010-12-31 2011-10-12 友达光电股份有限公司 堆叠式太阳能电池模块
US20120167964A1 (en) * 2010-12-31 2012-07-05 Au Optronics Corporation Stacked photovoltaic cell module
TWI425690B (zh) * 2010-12-31 2014-02-01 Au Optronics Corp 堆疊式太陽能電池模組
TWI799118B (zh) * 2022-01-28 2023-04-11 勝慧科技有限公司 雙能區光電效應電極耦合的雙異質接面太陽能電池及其製造方法

Also Published As

Publication number Publication date
CN101809759B (zh) 2012-06-20
JP4940309B2 (ja) 2012-05-30
EP2207209A1 (en) 2010-07-14
US20100282297A1 (en) 2010-11-11
KR101098152B1 (ko) 2011-12-26
EP2207209A4 (en) 2014-12-03
KR20100035716A (ko) 2010-04-06
JPWO2009057692A1 (ja) 2011-03-10
CN101809759A (zh) 2010-08-18

Similar Documents

Publication Publication Date Title
WO2009057692A1 (ja) 太陽電池
USD602432S1 (en) Reverse current blocking module for use in a solar power installation
WO2011112759A3 (en) Improved photovoltaic device
WO2012082613A3 (en) Improved photovoltaic device
WO2008066696A3 (en) Sam avalanche photodiode detector with absorption region and multiplication region in individual isolated mesas
EP2590223A3 (en) Solar cell
EP2269231A4 (en) INTEGRATED SOLAR CELL WITH WAVELENGTH REVERSE LAYERS AND LIGHTING AND CONCENTRATION LAYERS
WO2010027944A3 (en) Light collection device with prismatic light turning features
EP4345921A3 (en) Front contact solar cell with backside poly-crystalline silicon emitter
WO2010062708A3 (en) Hybrid transparent conductive electrodes
USD641917S1 (en) Portable lamp with solar battery
WO2008028123A3 (en) Interconnected solar cells
WO2009028287A1 (ja) 光電変換素子、光電変換素子接続体および光電変換モジュール
WO2008156521A3 (en) Textured rear electrode structure for use in photovoltaic device such as cigs/cis solar cell
WO2009135114A3 (en) Transparent conductive materials including cadmium stannate
WO2011090706A3 (en) Hermetically sealed solar cells
AU2003228601A1 (en) Solar cell modules with improved backskin
IN2014CN02214A (ja)
EP1840975A3 (en) Photovoltaic module
WO2009011794A3 (en) Photovoltaic module with integrated energy storage
IL213148A (en) Solar cell with rear contact in the emitting layer
WO2011069079A3 (en) Concentrating solar collector with shielding mirrors
WO2009017174A1 (ja) 太陽電池モジュール
WO2010033281A3 (en) Organic photovoltaic cell and light emitting diode with an array of 3-dimensionally fabricated electrodes
AU2011332300A8 (en) IR photodetectors with high detectivity at low drive voltage

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880109660.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08845475

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20107004316

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2009539103

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2008845475

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12679150

Country of ref document: US