WO2009041256A1 - Iii族窒化物半導体発光素子及びその製造方法、並びにランプ - Google Patents
Iii族窒化物半導体発光素子及びその製造方法、並びにランプ Download PDFInfo
- Publication number
- WO2009041256A1 WO2009041256A1 PCT/JP2008/066261 JP2008066261W WO2009041256A1 WO 2009041256 A1 WO2009041256 A1 WO 2009041256A1 JP 2008066261 W JP2008066261 W JP 2008066261W WO 2009041256 A1 WO2009041256 A1 WO 2009041256A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group iii
- iii nitride
- nitride semiconductor
- buffer layer
- emitting device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 150000004767 nitrides Chemical class 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 238000005546 reactive sputtering Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- -1 nitride compound Chemical class 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Physical Vapour Deposition (AREA)
- Led Device Packages (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/680,445 US20100219445A1 (en) | 2007-09-27 | 2008-09-09 | Group iii nitride semiconductor light-emitting device, method for manufacturing the same, and lamp |
EP08833533.6A EP2200099A4 (en) | 2007-09-27 | 2008-09-09 | LIGHT-EMITTING GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP |
CN200880117594A CN101874306A (zh) | 2007-09-27 | 2008-09-09 | Ⅲ族氮化物半导体发光元件及其制造方法以及灯 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-251478 | 2007-09-27 | ||
JP2007251478A JP2009081406A (ja) | 2007-09-27 | 2007-09-27 | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009041256A1 true WO2009041256A1 (ja) | 2009-04-02 |
Family
ID=40511145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/066261 WO2009041256A1 (ja) | 2007-09-27 | 2008-09-09 | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100219445A1 (ja) |
EP (1) | EP2200099A4 (ja) |
JP (1) | JP2009081406A (ja) |
KR (1) | KR20100049123A (ja) |
CN (1) | CN101874306A (ja) |
TW (1) | TW200933933A (ja) |
WO (1) | WO2009041256A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102549203A (zh) * | 2009-09-28 | 2012-07-04 | 株式会社德山 | 叠层体的制造方法 |
CN102597340A (zh) * | 2009-11-10 | 2012-07-18 | 株式会社德山 | 叠层体的制造方法 |
CN106030834A (zh) * | 2014-02-17 | 2016-10-12 | 欧司朗光电半导体有限公司 | 用于制造光电子半导体芯片的方法和光电子半导体芯片 |
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JP5272390B2 (ja) * | 2007-11-29 | 2013-08-28 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法、iii族窒化物半導体発光素子の製造方法、及びiii族窒化物半導体発光素子、並びにランプ |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
KR101178505B1 (ko) * | 2009-11-03 | 2012-09-07 | 주식회사루미지엔테크 | 반도체 기판과 이의 제조 방법 |
US8647904B2 (en) | 2010-03-01 | 2014-02-11 | Sharp Kabushiki Kaisha | Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus |
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US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8409895B2 (en) * | 2010-12-16 | 2013-04-02 | Applied Materials, Inc. | Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
JP5879225B2 (ja) * | 2011-08-22 | 2016-03-08 | 住友化学株式会社 | 窒化物半導体テンプレート及び発光ダイオード |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
KR20130067610A (ko) * | 2011-12-14 | 2013-06-25 | 한국전자통신연구원 | 도파로형 광 혼합기 |
JP2013145867A (ja) * | 2011-12-15 | 2013-07-25 | Hitachi Cable Ltd | 窒化物半導体テンプレート及び発光ダイオード |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
WO2013155108A1 (en) | 2012-04-09 | 2013-10-17 | Transphorm Inc. | N-polar iii-nitride transistors |
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CN105590839B (zh) * | 2016-03-22 | 2018-09-14 | 安徽三安光电有限公司 | 氮化物底层、发光二极管及底层制备方法 |
TWI762486B (zh) | 2016-05-31 | 2022-05-01 | 美商創世舫科技有限公司 | 包含漸變空乏層的三族氮化物裝置 |
TWI703726B (zh) * | 2016-09-19 | 2020-09-01 | 新世紀光電股份有限公司 | 含氮半導體元件 |
CN109841708B (zh) * | 2017-11-28 | 2022-05-31 | 中国科学院半导体研究所 | 半导体器件及其制备方法 |
JP7555470B1 (ja) | 2023-12-07 | 2024-09-24 | 日機装株式会社 | 窒化物半導体発光素子 |
CN118472152B (zh) * | 2024-07-12 | 2024-09-17 | 诺视科技(浙江)有限公司 | 集成反射穹顶的微显示器件及其制备方法 |
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CN102597340A (zh) * | 2009-11-10 | 2012-07-18 | 株式会社德山 | 叠层体的制造方法 |
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US10312401B2 (en) | 2014-02-17 | 2019-06-04 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
CN106030834B (zh) * | 2014-02-17 | 2020-03-06 | 欧司朗光电半导体有限公司 | 用于制造光电子半导体芯片的方法和光电子半导体芯片 |
US11005003B2 (en) | 2014-02-17 | 2021-05-11 | Osram Oled Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
US11430907B2 (en) | 2014-02-17 | 2022-08-30 | Osram Oled Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
US11888083B2 (en) | 2014-02-17 | 2024-01-30 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
Also Published As
Publication number | Publication date |
---|---|
EP2200099A1 (en) | 2010-06-23 |
EP2200099A4 (en) | 2016-03-23 |
KR20100049123A (ko) | 2010-05-11 |
TW200933933A (en) | 2009-08-01 |
US20100219445A1 (en) | 2010-09-02 |
CN101874306A (zh) | 2010-10-27 |
JP2009081406A (ja) | 2009-04-16 |
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