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WO2009041256A1 - Iii族窒化物半導体発光素子及びその製造方法、並びにランプ - Google Patents

Iii族窒化物半導体発光素子及びその製造方法、並びにランプ Download PDF

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Publication number
WO2009041256A1
WO2009041256A1 PCT/JP2008/066261 JP2008066261W WO2009041256A1 WO 2009041256 A1 WO2009041256 A1 WO 2009041256A1 JP 2008066261 W JP2008066261 W JP 2008066261W WO 2009041256 A1 WO2009041256 A1 WO 2009041256A1
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WIPO (PCT)
Prior art keywords
group iii
iii nitride
nitride semiconductor
buffer layer
emitting device
Prior art date
Application number
PCT/JP2008/066261
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English (en)
French (fr)
Inventor
Yasunori Yokoyama
Hisayuki Miki
Original Assignee
Showa Denko K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to US12/680,445 priority Critical patent/US20100219445A1/en
Priority to EP08833533.6A priority patent/EP2200099A4/en
Priority to CN200880117594A priority patent/CN101874306A/zh
Publication of WO2009041256A1 publication Critical patent/WO2009041256A1/ja

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • HELECTRICITY
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025Physical imperfections, e.g. particular concentration or distribution of impurities
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    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Led Device Packages (AREA)

Abstract

 サファイアからなる基板11上に、少なくともIII族窒化物化合物からなるバッファ層12が積層され、該バッファ層12上に、n型半導体層14、発光層15及びp型半導体層16が順次積層されてなり、バッファ層12は、反応性スパッタ法によって形成されるものであり、バッファ層12が酸素を含有し、かつ、バッファ層12中の酸素濃度が1原子%以下である。基板上に、反応性スパッタ法を用いてバッファ層を形成し、その上に結晶性の良好なIII族窒化物半導体を成長させることができ、優れた発光特性を有するIII族窒化物半導体発光素子及びその製造方法、並びにランプを提供する。
PCT/JP2008/066261 2007-09-27 2008-09-09 Iii族窒化物半導体発光素子及びその製造方法、並びにランプ WO2009041256A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/680,445 US20100219445A1 (en) 2007-09-27 2008-09-09 Group iii nitride semiconductor light-emitting device, method for manufacturing the same, and lamp
EP08833533.6A EP2200099A4 (en) 2007-09-27 2008-09-09 LIGHT-EMITTING GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP
CN200880117594A CN101874306A (zh) 2007-09-27 2008-09-09 Ⅲ族氮化物半导体发光元件及其制造方法以及灯

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-251478 2007-09-27
JP2007251478A JP2009081406A (ja) 2007-09-27 2007-09-27 Iii族窒化物半導体発光素子及びその製造方法、並びにランプ

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WO2009041256A1 true WO2009041256A1 (ja) 2009-04-02

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US (1) US20100219445A1 (ja)
EP (1) EP2200099A4 (ja)
JP (1) JP2009081406A (ja)
KR (1) KR20100049123A (ja)
CN (1) CN101874306A (ja)
TW (1) TW200933933A (ja)
WO (1) WO2009041256A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102549203A (zh) * 2009-09-28 2012-07-04 株式会社德山 叠层体的制造方法
CN102597340A (zh) * 2009-11-10 2012-07-18 株式会社德山 叠层体的制造方法
CN106030834A (zh) * 2014-02-17 2016-10-12 欧司朗光电半导体有限公司 用于制造光电子半导体芯片的方法和光电子半导体芯片

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CN105633233B (zh) * 2015-12-31 2018-01-12 华灿光电(苏州)有限公司 AlN模板、AlN模板的制备方法及AlN模板上的半导体器件
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CN105755536B (zh) * 2016-02-06 2019-04-26 上海新傲科技股份有限公司 一种采用AlON缓冲层的氮化物的外延生长技术
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TWI703726B (zh) * 2016-09-19 2020-09-01 新世紀光電股份有限公司 含氮半導體元件
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JP7555470B1 (ja) 2023-12-07 2024-09-24 日機装株式会社 窒化物半導体発光素子
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