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WO2008153054A1 - プラズマ処理装置およびプラズマ処理装置の使用方法 - Google Patents

プラズマ処理装置およびプラズマ処理装置の使用方法 Download PDF

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Publication number
WO2008153054A1
WO2008153054A1 PCT/JP2008/060673 JP2008060673W WO2008153054A1 WO 2008153054 A1 WO2008153054 A1 WO 2008153054A1 JP 2008060673 W JP2008060673 W JP 2008060673W WO 2008153054 A1 WO2008153054 A1 WO 2008153054A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
plasma processing
microwave
propagation
processing container
Prior art date
Application number
PCT/JP2008/060673
Other languages
English (en)
French (fr)
Inventor
Masaki Hirayama
Tadahiro Ohmi
Original Assignee
Tokyo Electron Limited
Tohoku University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited, Tohoku University filed Critical Tokyo Electron Limited
Priority to JP2009519274A priority Critical patent/JP4918592B2/ja
Priority to US12/663,662 priority patent/US8568556B2/en
Priority to CN2008800064538A priority patent/CN101622912B/zh
Priority to KR1020097024342A priority patent/KR101183039B1/ko
Publication of WO2008153054A1 publication Critical patent/WO2008153054A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

【課題】導体表面波の伝搬を抑制する。 【解決手段】プラズマ処理装置１０は、金属により形成された処理容器１００と、マイクロ波を出力するマイクロ波源９００と、処理容器１００の内壁に面し、マイクロ波源９００から出力されたマイクロ波を処理容器内に透過する誘電体板３０５と、処理容器の内面に設けられた伝搬障害部として機能する溝３００ａとを有する。低周波数のマイクロ波を供給した場合、溝３００ａにより導体表面波の伝搬が抑制される。
PCT/JP2008/060673 2007-06-11 2008-06-11 プラズマ処理装置およびプラズマ処理装置の使用方法 WO2008153054A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009519274A JP4918592B2 (ja) 2007-06-11 2008-06-11 プラズマ処理装置およびプラズマ処理装置の使用方法
US12/663,662 US8568556B2 (en) 2007-06-11 2008-06-11 Plasma processing apparatus and method for using plasma processing apparatus
CN2008800064538A CN101622912B (zh) 2007-06-11 2008-06-11 等离子体处理装置及等离子体处理装置的使用方法
KR1020097024342A KR101183039B1 (ko) 2007-06-11 2008-06-11 플라즈마 처리 장치 및 플라즈마 처리 장치의 사용 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-153553 2007-06-11
JP2007153553 2007-06-11

Publications (1)

Publication Number Publication Date
WO2008153054A1 true WO2008153054A1 (ja) 2008-12-18

Family

ID=40129659

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060673 WO2008153054A1 (ja) 2007-06-11 2008-06-11 プラズマ処理装置およびプラズマ処理装置の使用方法

Country Status (6)

Country Link
US (1) US8568556B2 (ja)
JP (1) JP4918592B2 (ja)
KR (1) KR101183039B1 (ja)
CN (1) CN101622912B (ja)
TW (1) TW200915931A (ja)
WO (1) WO2008153054A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012121289A1 (ja) * 2011-03-08 2012-09-13 東京エレクトロン株式会社 表面波プラズマ処理装置、マイクロ波プラズマ源、およびそれに用いるマイクロ波導入機構
WO2014038667A1 (ja) * 2012-09-06 2014-03-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
JP2017008389A (ja) * 2015-06-24 2017-01-12 トヨタ自動車株式会社 プラズマ化学気相成長装置
JP2019106358A (ja) * 2017-12-14 2019-06-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2021070636A1 (ja) * 2019-10-08 2021-04-15 東京エレクトロン株式会社 プラズマ処理装置及び天壁

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
JP5631088B2 (ja) * 2010-07-15 2014-11-26 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
DE102012103938A1 (de) * 2012-05-04 2013-11-07 Reinhausen Plasma Gmbh Plasmamodul für eine Plasmaerzeugungsvorrichtung und Plasmaerzeugungsvorrichtung
US11508556B2 (en) * 2017-05-16 2022-11-22 Tokyo Electron Limited Plasma processing apparatus
CN110797248A (zh) * 2018-08-01 2020-02-14 北京北方华创微电子装备有限公司 表面波等离子体装置和半导体处理设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045848A (ja) * 2001-07-27 2003-02-14 Shibaura Mechatronics Corp プラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2005044822A (ja) * 2003-07-22 2005-02-17 Shibaura Mechatronics Corp プラズマ処理装置
JP2005135801A (ja) * 2003-10-31 2005-05-26 Canon Inc 処理装置
JP2007048982A (ja) * 2005-08-10 2007-02-22 Tokyo Electron Ltd プラズマ処理装置の制御方法およびプラズマ処理装置

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JPH10158847A (ja) * 1996-12-06 1998-06-16 Toshiba Corp マイクロ波励起によるプラズマ処理装置
JP5036092B2 (ja) 1999-03-24 2012-09-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP3763392B2 (ja) * 2000-08-03 2006-04-05 シャープ株式会社 高周波電極およびプラズマ処理装置
JP4554065B2 (ja) * 2000-12-19 2010-09-29 東京エレクトロン株式会社 プラズマ処理装置
JP3960775B2 (ja) * 2001-11-08 2007-08-15 シャープ株式会社 プラズマプロセス装置および処理装置
US20030168012A1 (en) * 2002-03-07 2003-09-11 Hitoshi Tamura Plasma processing device and plasma processing method
JP4141764B2 (ja) * 2002-08-20 2008-08-27 東京エレクトロン株式会社 プラズマ処理装置
JP4220316B2 (ja) 2003-06-24 2009-02-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100872260B1 (ko) * 2004-02-16 2008-12-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리장치 및 플라즈마 처리방법
JP5013393B2 (ja) * 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
WO2008153064A1 (ja) * 2007-06-11 2008-12-18 Tokyo Electron Limited プラズマ処理装置および処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045848A (ja) * 2001-07-27 2003-02-14 Shibaura Mechatronics Corp プラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2005044822A (ja) * 2003-07-22 2005-02-17 Shibaura Mechatronics Corp プラズマ処理装置
JP2005135801A (ja) * 2003-10-31 2005-05-26 Canon Inc 処理装置
JP2007048982A (ja) * 2005-08-10 2007-02-22 Tokyo Electron Ltd プラズマ処理装置の制御方法およびプラズマ処理装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012121289A1 (ja) * 2011-03-08 2012-09-13 東京エレクトロン株式会社 表面波プラズマ処理装置、マイクロ波プラズマ源、およびそれに用いるマイクロ波導入機構
WO2014038667A1 (ja) * 2012-09-06 2014-03-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
JP5955394B2 (ja) * 2012-09-06 2016-07-20 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP2017008389A (ja) * 2015-06-24 2017-01-12 トヨタ自動車株式会社 プラズマ化学気相成長装置
JP2019106358A (ja) * 2017-12-14 2019-06-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2021070636A1 (ja) * 2019-10-08 2021-04-15 東京エレクトロン株式会社 プラズマ処理装置及び天壁
JP2021061203A (ja) * 2019-10-08 2021-04-15 東京エレクトロン株式会社 プラズマ処理装置及び天壁
JP7300957B2 (ja) 2019-10-08 2023-06-30 東京エレクトロン株式会社 プラズマ処理装置及び天壁

Also Published As

Publication number Publication date
KR101183039B1 (ko) 2012-09-20
US20100170872A1 (en) 2010-07-08
JP4918592B2 (ja) 2012-04-18
US8568556B2 (en) 2013-10-29
TW200915931A (en) 2009-04-01
JPWO2008153054A1 (ja) 2010-08-26
KR20100012868A (ko) 2010-02-08
CN101622912A (zh) 2010-01-06
CN101622912B (zh) 2013-01-23

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