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WO2004111319A3 - Sacrificial template method of fabricating a nanotube - Google Patents

Sacrificial template method of fabricating a nanotube Download PDF

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Publication number
WO2004111319A3
WO2004111319A3 PCT/US2003/039200 US0339200W WO2004111319A3 WO 2004111319 A3 WO2004111319 A3 WO 2004111319A3 US 0339200 W US0339200 W US 0339200W WO 2004111319 A3 WO2004111319 A3 WO 2004111319A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanotubes
crystalline
templates
zno
gan
Prior art date
Application number
PCT/US2003/039200
Other languages
French (fr)
Other versions
WO2004111319A2 (en
Inventor
Peidong Yang
Rongrui He
Joshua Goldberger
Rong Fan
Yiying Wu
Deyu Li
Arun Majumdar
Original Assignee
Univ California
Peidong Yang
Rongrui He
Joshua Goldberger
Rong Fan
Yiying Wu
Deyu Li
Arun Majumdar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Peidong Yang, Rongrui He, Joshua Goldberger, Rong Fan, Yiying Wu, Deyu Li, Arun Majumdar filed Critical Univ California
Priority to EP03816316A priority Critical patent/EP1583858A4/en
Priority to CA002509257A priority patent/CA2509257A1/en
Priority to JP2005517137A priority patent/JP2006512218A/en
Priority to AU2003304214A priority patent/AU2003304214A1/en
Publication of WO2004111319A2 publication Critical patent/WO2004111319A2/en
Publication of WO2004111319A3 publication Critical patent/WO2004111319A3/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/602—Nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the <001> direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar 'epitaxial-casting' approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.
PCT/US2003/039200 2002-12-09 2003-12-08 Sacrificial template method of fabricating a nanotube WO2004111319A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP03816316A EP1583858A4 (en) 2002-12-09 2003-12-08 Sacrificial template method of fabricating a nanotube
CA002509257A CA2509257A1 (en) 2002-12-09 2003-12-08 Sacrificial template method of fabricating a nanotube
JP2005517137A JP2006512218A (en) 2002-12-09 2003-12-08 Sacrificial template method for producing nanotubes
AU2003304214A AU2003304214A1 (en) 2002-12-09 2003-12-08 Sacrificial template method of fabricating a nanotube

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US43210402P 2002-12-09 2002-12-09
US60/432,104 2002-12-09
US45403803P 2003-03-11 2003-03-11
US60/454,038 2003-03-11
US46134603P 2003-04-08 2003-04-08
US60/461,346 2003-04-08

Publications (2)

Publication Number Publication Date
WO2004111319A2 WO2004111319A2 (en) 2004-12-23
WO2004111319A3 true WO2004111319A3 (en) 2005-07-07

Family

ID=33556317

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/039200 WO2004111319A2 (en) 2002-12-09 2003-12-08 Sacrificial template method of fabricating a nanotube

Country Status (6)

Country Link
EP (1) EP1583858A4 (en)
JP (1) JP2006512218A (en)
KR (1) KR20050085437A (en)
AU (1) AU2003304214A1 (en)
CA (1) CA2509257A1 (en)
WO (1) WO2004111319A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4528938B2 (en) * 2004-12-24 2010-08-25 独立行政法人物質・材料研究機構 Manufacturing method of gallium nitride nanowire doped with manganese
JP4970997B2 (en) 2006-03-30 2012-07-11 パナソニック株式会社 Manufacturing method of nanowire transistor
JP4856666B2 (en) * 2008-03-26 2012-01-18 独立行政法人科学技術振興機構 Light emitting diode element and method for manufacturing the same
KR101494671B1 (en) * 2008-10-27 2015-02-24 삼성전자주식회사 Method of preparing piezoelectric material nanotube and piezoelectric material nanotube
KR101819035B1 (en) * 2009-02-16 2018-01-18 삼성전자주식회사 Anode comprising Group 14 metal nanotube, lithium battery comprising anode, and preparation method thereof
US8940438B2 (en) 2009-02-16 2015-01-27 Samsung Electronics Co., Ltd. Negative electrode including group 14 metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode
KR101106543B1 (en) * 2009-10-13 2012-01-20 한국표준과학연구원 Preparation of graphene microtubes
US20120094192A1 (en) * 2010-10-14 2012-04-19 Ut-Battelle, Llc Composite nanowire compositions and methods of synthesis
JP5929115B2 (en) * 2011-11-17 2016-06-01 富士通株式会社 Semiconductor nanodevice
KR101922127B1 (en) * 2012-03-13 2018-11-26 삼성전자주식회사 Nanopore device with improved sensitivity and method of fabricating the same
KR101463976B1 (en) * 2012-03-19 2014-11-27 최대규 A material and the manufacture process
CN102820213A (en) * 2012-09-05 2012-12-12 中国科学院半导体研究所 Method for growing single crystal GaN nanometer pipes by utilizing InN nanometer rods as nucleation layers
KR101449643B1 (en) * 2013-03-18 2014-10-13 공주대학교 산학협력단 Fabrication Method of Metal Oxide Nanotube
JP6665490B2 (en) * 2015-11-04 2020-03-13 日立化成株式会社 Dispersion for electromagnetic wave adjustment and electromagnetic wave adjustment element
KR102440690B1 (en) 2017-11-03 2022-09-05 현대자동차주식회사 An air electrode for a metal-air battery, and a fabrication method of the same, and the metal-air battery
CN109544555B (en) * 2018-11-26 2021-09-03 陕西师范大学 Tiny crack segmentation method based on generation type countermeasure network
EP4047359A1 (en) * 2021-02-22 2022-08-24 Meilleur Temps Electrode for an electrochemical sensor
CN113964003A (en) * 2021-10-09 2022-01-21 电子科技大学长三角研究院(湖州) GaN photocathode with nanotube structure and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20040175844A1 (en) * 2002-12-09 2004-09-09 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352512A (en) * 1989-03-15 1994-10-04 The United States Of America As Represented By The Secretary Of The Air Force Microscopic tube material and its method of manufacture
US6194066B1 (en) * 1991-04-24 2001-02-27 The United States Of America As Represented By The Secretary Of The Air Force Microscopic tube devices and method of manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20040175844A1 (en) * 2002-12-09 2004-09-09 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1583858A4 *

Also Published As

Publication number Publication date
JP2006512218A (en) 2006-04-13
EP1583858A4 (en) 2008-03-12
KR20050085437A (en) 2005-08-29
AU2003304214A1 (en) 2005-01-04
WO2004111319A2 (en) 2004-12-23
EP1583858A2 (en) 2005-10-12
CA2509257A1 (en) 2004-12-23

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