Nothing Special   »   [go: up one dir, main page]

WO1996026159A1 - Treatment of zircon - Google Patents

Treatment of zircon Download PDF

Info

Publication number
WO1996026159A1
WO1996026159A1 PCT/US1996/002462 US9602462W WO9626159A1 WO 1996026159 A1 WO1996026159 A1 WO 1996026159A1 US 9602462 W US9602462 W US 9602462W WO 9626159 A1 WO9626159 A1 WO 9626159A1
Authority
WO
WIPO (PCT)
Prior art keywords
zircon
plasma
zone
dissociated
plasma zone
Prior art date
Application number
PCT/US1996/002462
Other languages
French (fr)
Other versions
WO1996026159B1 (en
Inventor
Jacob Adriaan De Beer
Original Assignee
Peltek, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Peltek, Inc. filed Critical Peltek, Inc.
Priority to AU51727/96A priority Critical patent/AU5172796A/en
Publication of WO1996026159A1 publication Critical patent/WO1996026159A1/en
Publication of WO1996026159B1 publication Critical patent/WO1996026159B1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/182Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by reduction of a siliceous material, e.g. with a carbonaceous reducing agent and subsequent oxidation of the silicon monoxide formed
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00Compounds of zirconium
    • C01G25/02Oxides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/02Amorphous compounds
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/80Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Definitions

  • THIS INVENTION relates to the treatment of zircon. It relates in particular to a process for treating zircon to produce dissociated zircon, to a reactor for carrying out the process, to dissociated zircon thus produced, and to the use of dissociated zircon.
  • a process for treating zircon to produce dissociated zircon comprises providing a high temperature plasma zone by means of a plasma flame generated by at least one non-transfer-arc plasma gun; feeding particulate zircon, ZrSi0 4 , into the plasma zone; allowing the zircon to free-fall through the plasma zone, thereby being converted at least partially to plasma dissociated zircon; and quenching the plasma dissociated zircon in a quench zone below the plasma zone.
  • the feeding of the zircon into the plasma zone may comprise introducing the zircon into a feed zone above the plasma zone, and allowing the zircon to pass from the feed zone into the plasma zone.
  • the feeding of the zircon into the plasma zone may comprise allowing the zircon to pass through the plasma gun into the plasma zone and/or allowing the zircon to pass through at least one conduit located adjacent the plasma gun, into the plasma zone.
  • the plasma zone may be generated by a plurality of non-transfer-arc plasma guns.
  • three such guns arranged in star fashion with operative ends thereof being downwardly inwardly directed, may be provided.
  • the zircon is subjected to high temperatures, preferably above 1800°C, and is dissociated at least partially or substantially into the plasma dissociated zircon, hereinafter also referred to as 'PDZ', according to the following reaction: ZrSi0 4 • * ⁇ » Zr ⁇ 2 -Si ⁇ 2
  • the above reaction is reversible and, to ensure good yields of PDZ, the heated material should be quenched rapidly to below at least 500°C, to minimize the reverse reaction.
  • the required residence time of the zircon in the plasma zone is a function of the temperature in the zone and/or the particle size of the zircon. However, at said temperature of at least 1800°C, a residence time of 5 milliseconds or more, will suffice.
  • the mineral melts and dissociates into its constituent Zr0 2 and Si0 2 components. Upon quenching, the higher melting Zr0 2 crystallizes as an agglomeration of submicron crystallites, with subsequently solidifying amorphous Si0 2 cementing the
  • each plasma dissociated zircon particle having approximately the same particle size as the original zircon feed material. It is, however, important to maintain the correct feed rate and temperature regime inside the plasma zone to achieve dissociation, but at the same time to prevent fusion of the individual dissociated particles together.
  • the quenching of the PDZ may be effected by means of air or another suitable quenching gas or liquid, which may be at room temperature.
  • the process may include rendering the resultant PDZ into smaller particulate form, eg even down to sizes as small as submicron sizes, if required. This may be effected by means of milling. The process may then also include leaching contaminants, such as Ti, Fe, Ca and Al, from the milled PDZ.
  • a reactor for treating zircon to produce dissociated zircon which reactor comprises reaction chamber defining means defining a reaction chamber; - A - at least one non-transfer arc plasma gun protruding into a plasma zone within the reaction chamber; feed means for feeding zircon into the plasma zone such that the zircon can free fall through the plasma zone; and quenching agent feed means for feeding a quenching agent into a quench zone below the plasma zone.
  • the feed means may comprise a zircon feed conduit terminating in a feed zone above the plasma zone.
  • the feed means may comprise a zircon feed conduit or passageway through the plasma gun and/or at least one zircon feed conduit adjacent the plasma gun and adapted to discharge zircon in the plasma zone.
  • a plurality, eg three, of the plasma guns, arranged in star fashion with operative ends thereof being downwardly inwardly directed, as hereinbefore described, may be provided.
  • the reaction chamber defining means may comprise a lined reactor shell.
  • Opacifiers used in glazes or enamels are sufficiently low in light transparency effectively to hide from view the underlying substrate or ceramic body to which such a glaze is applied.
  • Such glazes are usually white, but their colour can vary if desired.
  • the more opaque the glaze the greater the hiding power per unit of glaze thickness.
  • Opacity in glazes is the result of reflection and refraction of light by phases and particles suspended in a clear glaze matrix.
  • the glaze layer must contain materials in a fine state of subdivision and that have refractive indices different from that of the glaze matrix.
  • an opacifier must have a sufficient degree of difference in refractive index as compared to the transparent matrix, and the size of the dispersed opacifier particles should be sufficiently small since, generally, the smaller the particle, the more effective is its opacifying ability, up to certain limits. Furthermore, the material must be resistant to high firing temperatures which are characteristic of the ceramic industry, and must be relatively cheap.
  • Zircon possesses a favourable refractive index of 2,05, is sufficiently resistant to high temperatures, and is used as an opacifier in the ceramic industry.
  • mined zircon has a relatively large particle size, and thus requires milling in order to impart satisfactory opacifying properties thereto.
  • opacifier grade zircon is milled down from an as-mined size of approximately lOO ⁇ to 200 ⁇ m (microns) , to a more favourable size of approximately l ⁇ m to 5 ⁇ m.
  • zircon is notoriously difficult to mill, so that long milling times, are normally required. As a result, milling costs are inevitably high.
  • particle sizes of l ⁇ m to 5 ⁇ m are not optimum with respect to opacifying efficiency.
  • maximum opacity is achieved with particle sizes of about 0,25 ⁇ m.
  • the scattering coefficient for extremely small particles varies with the fourth power of the particle diameter.
  • zircon the high milling costs associated with producing such small particles have precluded this from industrial application.
  • a ceramic glaze opacifier which comprises plasma dissociated zircon in comminuted particulate form.
  • PDZ can be comminuted, eg milled, down to smaller, even submicron sizes, much more readily than can be undissociated zircon itself.
  • Submicron PDZ therefore constitutes an affordable high quality opacifying agent or opacifier.
  • the inherent submicron nature (approximately 0,25 ⁇ m) of the Zr ⁇ 2 crystallite content of PDZ is used to obtain a high quality opacifying capability or property.
  • equivalent or even better opacifying properties may be obtained by utilizing PDZ of much larger particle size than would be the case with undissociated zircon itself.
  • the only limitation would be to mill the PDZ down to suitable sizes for efficient fluxing and good distribution/coverage.
  • the PDZ may be milled down to particle sizes with a d ⁇ , value of less than 40 ⁇ m, preferably a ⁇ ⁇ value of less than 10 ⁇ m.
  • dr ⁇ of less then l ⁇ m.
  • the submicron Zr0 2 constituent of the PDZ particles will react with the silica of the glaze to form submicron zircon particles in the glaze, thereby imparting high quality opacifying properties thereto.
  • 'd ⁇ ' is meant that 90% of the particles are smaller than the value indicated.
  • the PDZ may be that obtained from the process as hereinbefore described, or the reactor as hereinbefore described.
  • a method of producing a glazed ceramic artefact comprises applying a glazing layer containing plasma dissociated zircon in comminuted particulate form, to a ceramic or enamel substrate.
  • the glazing layer may comprise a matrix or slip with which is admixed the PDZ particles of a suitable size, as hereinbefore described.
  • a glazed ceramic artefact which comprises a ceramic substrate and a glazing layer on the substrate, the glazing layer comprising an admixture of a matrix and PDZ in comminuted particulate form.
  • FIGURE 1 shows, schematically, a side view of a reactor according to the invention.
  • FIGURE 2 shows, schematically, a plan view of the reactor of Figure 1.
  • reference numeral 10 generally indicates a reactor for producing dissociated zircon.
  • the reactor 10 comprises a cylindrical upright reactor shell 12.
  • a zircon inlet conduit 14 leads axially into the upper end of the shell 12, while a PDZ withdrawal conduit 16 leads from the lower end thereof.
  • Three non-transfer-arc plasma guns 18 protrude into the shell 12 near its upper end. The guns 18 are spaced circumferentially apart, and are inclined downwardly inwardly.
  • a quench air conduit 20 leads into the shell 12 below the guns 18. As previously indicated, the quench medium may be a liquid instead of air.
  • particulate zircon In use, particulate zircon, ZrSi0 4 , is fed into the top of the shell 12 through the conduit 14.
  • the zircon thus enters a feed zone 22 located above the plasma guns 18.
  • the zircon free-falls from the feed zone 22 through a plasma zone 24 containing plasma flames generated by the guns and in which a temperature, under plasma conditions, of at least 1800°C is attained and maintained.
  • the zircon is converted to PDZ as hereinbefore described, and is rapidly quenched by contact with air entering, at room temperature, along the conduit 20. It is quenched rapidly to a temperature of 500°C or less.
  • the cooled particulate PDZ is withdrawn through the conduit 16. This stream can be subjected to gas-solid separation, filtration, etc in a stage 28, to recover the PDZ.
  • the zircon can be fed into the plasma zone 24 along a passageway or conduit (not shown) extending through one or more of the plasma guns 18, and/or along a plurality of conduits (not shown) located alongside at least one of the burners and adapted to discharge zircon passing therethrough into the plasma zone 24.
  • the PDZ comprises submicron Zr0 2 crystallites, cemented together with amorphous glassy Si0 2 . It can readily be milled down to desired particle sizes, by means of wet milling in a stage 30. Thereafter, contaminants such as Ti, Fe, Ca and Al can substantially be removed by leaching in a stage 32 so that there can be withdrawn, along a flow line 34, opacifier grade zircon which is substantially free of, in particular, Ti and Fe.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

A process for treating zircon to produce dissociated zircon comprises providing a high temperature plasma zone by means of a plasma flame generated by at least one non-transfer-arc plasma gun, and feeding particulate zircon, ZrSiO4, into the plasma zone. The zircon is allowed to free-fall through the plasma zone, thereby being converted at least partially to plasma dissociated zircon. The plasma dissociated zircon is quenched in a quench zone below the plasma zone.

Description

TREATMENT OF ZIRCON
THIS INVENTION relates to the treatment of zircon. It relates in particular to a process for treating zircon to produce dissociated zircon, to a reactor for carrying out the process, to dissociated zircon thus produced, and to the use of dissociated zircon.
According to a first aspect of the invention, there is provided a process for treating zircon to produce dissociated zircon, which process comprises providing a high temperature plasma zone by means of a plasma flame generated by at least one non-transfer-arc plasma gun; feeding particulate zircon, ZrSi04, into the plasma zone; allowing the zircon to free-fall through the plasma zone, thereby being converted at least partially to plasma dissociated zircon; and quenching the plasma dissociated zircon in a quench zone below the plasma zone.
The feeding of the zircon into the plasma zone may comprise introducing the zircon into a feed zone above the plasma zone, and allowing the zircon to pass from the feed zone into the plasma zone. Instead, or additionally, the feeding of the zircon into the plasma zone may comprise allowing the zircon to pass through the plasma gun into the plasma zone and/or allowing the zircon to pass through at least one conduit located adjacent the plasma gun, into the plasma zone.
The plasma zone may be generated by a plurality of non-transfer-arc plasma guns. In particular, three such guns, arranged in star fashion with operative ends thereof being downwardly inwardly directed, may be provided.
In the plasma zone, the zircon is subjected to high temperatures, preferably above 1800°C, and is dissociated at least partially or substantially into the plasma dissociated zircon, hereinafter also referred to as 'PDZ', according to the following reaction: ZrSi04 *■» Zrθ2-Siθ2
The above reaction is reversible and, to ensure good yields of PDZ, the heated material should be quenched rapidly to below at least 500°C, to minimize the reverse reaction.
The required residence time of the zircon in the plasma zone is a function of the temperature in the zone and/or the particle size of the zircon. However, at said temperature of at least 1800°C, a residence time of 5 milliseconds or more, will suffice. During the thermal processing of the zircon in the plasma zone or flame, the mineral melts and dissociates into its constituent Zr02 and Si02 components. Upon quenching, the higher melting Zr02 crystallizes as an agglomeration of submicron crystallites, with subsequently solidifying amorphous Si02 cementing the
Zr02 crystallites together. There is substantially no size reduction, with each plasma dissociated zircon particle having approximately the same particle size as the original zircon feed material. It is, however, important to maintain the correct feed rate and temperature regime inside the plasma zone to achieve dissociation, but at the same time to prevent fusion of the individual dissociated particles together.
The quenching of the PDZ may be effected by means of air or another suitable quenching gas or liquid, which may be at room temperature.
It has been found that the PDZ, consisting of submicron Zr02 crystallites, cemented together with the amorphous glassy Si02, is more readily comminuted to smaller particle sizes than is undissociated zircon itself. Accordingly, the process may include rendering the resultant PDZ into smaller particulate form, eg even down to sizes as small as submicron sizes, if required. This may be effected by means of milling. The process may then also include leaching contaminants, such as Ti, Fe, Ca and Al, from the milled PDZ.
According to a second aspect of the invention, there is provided a reactor for treating zircon to produce dissociated zircon, which reactor comprises reaction chamber defining means defining a reaction chamber; - A - at least one non-transfer arc plasma gun protruding into a plasma zone within the reaction chamber; feed means for feeding zircon into the plasma zone such that the zircon can free fall through the plasma zone; and quenching agent feed means for feeding a quenching agent into a quench zone below the plasma zone.
The feed means may comprise a zircon feed conduit terminating in a feed zone above the plasma zone. Instead, or additionally, the feed means may comprise a zircon feed conduit or passageway through the plasma gun and/or at least one zircon feed conduit adjacent the plasma gun and adapted to discharge zircon in the plasma zone.
A plurality, eg three, of the plasma guns, arranged in star fashion with operative ends thereof being downwardly inwardly directed, as hereinbefore described, may be provided. The reaction chamber defining means may comprise a lined reactor shell.
Opacifiers used in glazes or enamels (hereinafter referred to simply as 'glazes' for brevity, with derived words such as 'glazing' having a corresponding meaning) are sufficiently low in light transparency effectively to hide from view the underlying substrate or ceramic body to which such a glaze is applied. Such glazes are usually white, but their colour can vary if desired. The more opaque the glaze, the greater the hiding power per unit of glaze thickness. Opacity in glazes is the result of reflection and refraction of light by phases and particles suspended in a clear glaze matrix. To be opaque, the glaze layer must contain materials in a fine state of subdivision and that have refractive indices different from that of the glaze matrix. Thus, an opacifier must have a sufficient degree of difference in refractive index as compared to the transparent matrix, and the size of the dispersed opacifier particles should be sufficiently small since, generally, the smaller the particle, the more effective is its opacifying ability, up to certain limits. Furthermore, the material must be resistant to high firing temperatures which are characteristic of the ceramic industry, and must be relatively cheap.
Zircon possesses a favourable refractive index of 2,05, is sufficiently resistant to high temperatures, and is used as an opacifier in the ceramic industry. However, mined zircon has a relatively large particle size, and thus requires milling in order to impart satisfactory opacifying properties thereto. Thus, opacifier grade zircon is milled down from an as-mined size of approximately lOOμ to 200μm (microns) , to a more favourable size of approximately lμm to 5μm. However, due to its inherent hardness, zircon is notoriously difficult to mill, so that long milling times, are normally required. As a result, milling costs are inevitably high. Furthermore, there exists appreciable potential for contamination of the milled zircon with milling media during prolonged milling.
In addition, particle sizes of lμm to 5μm are not optimum with respect to opacifying efficiency. Studies have shown that maximum opacity is achieved with particle sizes of about 0,25μm. Furthermore, according to Rayleigh's law, the scattering coefficient for extremely small particles varies with the fourth power of the particle diameter. Thus it is highly beneficial in ceramic glazes to have particles less than lμm in diameter. However, with zircon, the high milling costs associated with producing such small particles have precluded this from industrial application.
It is therefore an aim of the invention to provide a zircon-based or zircon-derived opacifying agent or opacifier whereby these drawbacks are at least reduced and which complies with the requirements hereinbefore set out.
Thus, according to a third aspect of the invention, there is provided a ceramic glaze opacifier, which comprises plasma dissociated zircon in comminuted particulate form.
This aspect of the invention is based thereon that PDZ can be comminuted, eg milled, down to smaller, even submicron sizes, much more readily than can be undissociated zircon itself. Submicron PDZ therefore constitutes an affordable high quality opacifying agent or opacifier.
More particularly, the inherent submicron nature (approximately 0,25μm) of the Zrθ2 crystallite content of PDZ is used to obtain a high quality opacifying capability or property. Thus, equivalent or even better opacifying properties may be obtained by utilizing PDZ of much larger particle size than would be the case with undissociated zircon itself. The only limitation would be to mill the PDZ down to suitable sizes for efficient fluxing and good distribution/coverage. Thus, the PDZ may be milled down to particle sizes with a d^, value of less than 40μm, preferably a άκ value of less than 10μm. Most preferred, however, would be to mill the PDZ down to particle sizes with a drø of less then lμm. During the glazing process the submicron Zr02 constituent of the PDZ particles will react with the silica of the glaze to form submicron zircon particles in the glaze, thereby imparting high quality opacifying properties thereto. By 'd^' is meant that 90% of the particles are smaller than the value indicated.
The PDZ may be that obtained from the process as hereinbefore described, or the reactor as hereinbefore described.
According to a fourth aspect of the invention, there is provided a method of producing a glazed ceramic artefact, which method comprises applying a glazing layer containing plasma dissociated zircon in comminuted particulate form, to a ceramic or enamel substrate.
The glazing layer may comprise a matrix or slip with which is admixed the PDZ particles of a suitable size, as hereinbefore described.
According to a fifth aspect of the invention, there is provided a glazed ceramic artefact, which comprises a ceramic substrate and a glazing layer on the substrate, the glazing layer comprising an admixture of a matrix and PDZ in comminuted particulate form. The invention will now be described in more detail with reference to the accompanying diagrammatic drawings and the non-limiting examples set out hereunder.
In the drawings FIGURE 1 shows, schematically, a side view of a reactor according to the invention; and
FIGURE 2 shows, schematically, a plan view of the reactor of Figure 1.
In the drawings, reference numeral 10 generally indicates a reactor for producing dissociated zircon.
The reactor 10 comprises a cylindrical upright reactor shell 12. A zircon inlet conduit 14 leads axially into the upper end of the shell 12, while a PDZ withdrawal conduit 16 leads from the lower end thereof. Three non-transfer-arc plasma guns 18 protrude into the shell 12 near its upper end. The guns 18 are spaced circumferentially apart, and are inclined downwardly inwardly. A quench air conduit 20 leads into the shell 12 below the guns 18. As previously indicated, the quench medium may be a liquid instead of air.
In use, particulate zircon, ZrSi04, is fed into the top of the shell 12 through the conduit 14. The zircon thus enters a feed zone 22 located above the plasma guns 18. The zircon free-falls from the feed zone 22 through a plasma zone 24 containing plasma flames generated by the guns and in which a temperature, under plasma conditions, of at least 1800°C is attained and maintained. The zircon is converted to PDZ as hereinbefore described, and is rapidly quenched by contact with air entering, at room temperature, along the conduit 20. It is quenched rapidly to a temperature of 500°C or less. The cooled particulate PDZ is withdrawn through the conduit 16. This stream can be subjected to gas-solid separation, filtration, etc in a stage 28, to recover the PDZ.
Instead, or additionally, the zircon can be fed into the plasma zone 24 along a passageway or conduit (not shown) extending through one or more of the plasma guns 18, and/or along a plurality of conduits (not shown) located alongside at least one of the burners and adapted to discharge zircon passing therethrough into the plasma zone 24.
The PDZ comprises submicron Zr02 crystallites, cemented together with amorphous glassy Si02. It can readily be milled down to desired particle sizes, by means of wet milling in a stage 30. Thereafter, contaminants such as Ti, Fe, Ca and Al can substantially be removed by leaching in a stage 32 so that there can be withdrawn, along a flow line 34, opacifier grade zircon which is substantially free of, in particular, Ti and Fe.
EXAMPLE 1
PDZ which was obtained by plasma dissociating zircon to a degree of 80%, was subsequently milled to a d^ of 40μm. This material, as well as a commercial zircon opacifier having particle sizes with a d50 of 3,4μm, was used in comparative opacifier tests. To the trained eye it was clear that equivalent opacifying efficiency was obtained with both materials.
EXAMPLE 2
The above experiment was repeated with PDZ (90% dissociation and milled down to a d^ of 40μm) and two commercial zircon opacifiers, the one having particle sizes with a dso of l,5μm and the other having particle sizes with a d50 of 3,4μm. To the trained eye it was clear that better opacifying efficiency was obtained with the PDZ opacifier in comparison to the opacifier with the dJ0 of 3,4μm. In fact, the opacifying efficiency of the PDZ approached that obtained with the much finer commercial zircon opacifier having the particle sizes with the d50 of l,5μm.
From these examples, it is thus evident that the opacifying power of PDZ increases with the degree of plasma dissociation.
EXAMPLE 3
In comparative milling tests between zircon and 75% dissociated PDZ and with both materials starting at 150μm, the following advantages were demonstrated for PDZ.
Milled down to a d^ of 75μm, the specific energy consumption was 15,4kWh/ton of zircon, and 5,9k h/ton for the PDZ. Therefore a decrease in specific energy consumption of 2,6x ('times') was realised. - Milled down to a d^ of 25μm, a decrease in specific energy consumption of 2,lx was obtained. - Milled down to a d^ of 4,7μm, a decrease in specific energy consumption of l,5x was obtained. The above results were obtained under non-optimal conditions, due to the presence of 25% harder-to-mill residual zircon. In the case of >90% dissociation, more marked ease of millability or comminution should be obtained.

Claims

C A I M S
1. A process for treating zircon to produce dissociated zircon, which process comprises providing a high temperature plasma zone by means of a plasma flame generated by at least one non-transfer-arc plasma gun; feeding particulate zircon, ZrSi04, into the plasma zone; allowing the zircon to free-fall through the plasma zone, thereby being converted at least partially to plasma dissociated zircon; and quenching the plasma dissociated zircon in a quench zone below the plasma zone.
2. A process according to Claim 1, wherein the feeding of the zircon into the plasma zone comprises introducing the zircon into a feed zone above the plasma zone, and allowing the zircon to pass from the feed zone into the plasma zone.
3. A process according to Claim 1, wherein the feeding of the zircon into the plasma zone comprises allowing the zircon to pass through the plasma gun into the plasma zone.
. A process according to Claim 1, wherein the feeding of the zircon into the plasma zone comprises allowing the zircon to pass through at least one conduit located adjacent the plasma gun, into the plasma zone.
5. A process according to Claim 1, wherein the plasma zone is generated by three non-transfer-arc plasma guns arranged in star fashion with operative ends thereof being downwardly inwardly directed.
6. A process according to Claim 1, wherein the quenching of the plasma dissociated zircon is effected rapidly to a temperature below 500°C.
7. A process according to Claim 1, wherein the quenching of the plasma dissociated zircon is effected by means of air which is at room temperature.
8. A process according to Claim 1, which includes comminuting the resultant plasma dissociated zircon into smaller particulate form, and leaching contaminants from the milled plasma dissociated zircon.
9. A reactor for treating zircon to produce dissociated zircon, which reactor comprises reaction chamber defining means defining a reaction chamber; at least one non-transfer arc plasma gun protruding into a plasma zone within the reaction chamber; feed means for feeding zircon into the plasma zone such that the zircon can free fall through the plasma zone; and quenching agent feed means for feeding a quenching agent into a quench zone below the plasma zone.
10. A reactor according to Claim 9, wherein the feed means comprises a zircon feed conduit terminating in a feed zone above the plasma zone.
11. A reactor according to Claim 9, wherein the feed means comprises a zircon feed conduit or passageway through the plasma gun.
12. A reactor according to Claim 9, wherein the feed means comprises at least one zircon feed conduit adjacent the plasma gun and adapted to discharge zircon in the plasma zone.
13. A reactor according to Claim 9, wherein three of the plasma guns, arranged in star fashion with operative ends thereof being downwardly inwardly directed, are provided. „m
WO 96/26159
- 14 -
14. A ceramic glaze opacifier, which comprises plasma dissociated zircon in comminuted particulate form.
15. An opacifier according to Claim 14, wherein the plasma dissociated zircon is that obtained from the process as claimed
5 in Claim 1.
16. A method of producing a glazed ceramic artefact, which method comprises applying a glazing layer containing plasma dissociated zircon in comminuted particulate form, to a ceramic or enamel substrate.
10 17. A method according to Claim 16, wherein the glazing layer comprises a matrix or slip with which is admixed the PDZ particles.
18. A glazed ceramic artefact, which comprises a ceramic substrate and a glazing layer on the substrate, the glazing layer " comprising an admixture of a matrix and plasma dissociated zircon in comminuted particulate form.
PCT/US1996/002462 1995-02-21 1996-02-21 Treatment of zircon WO1996026159A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU51727/96A AU5172796A (en) 1995-02-21 1996-02-21 Treatment of zircon

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA95/1432 1995-02-21
ZA951432 1995-02-21

Publications (2)

Publication Number Publication Date
WO1996026159A1 true WO1996026159A1 (en) 1996-08-29
WO1996026159B1 WO1996026159B1 (en) 1996-11-21

Family

ID=25584849

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/002462 WO1996026159A1 (en) 1995-02-21 1996-02-21 Treatment of zircon

Country Status (2)

Country Link
AU (1) AU5172796A (en)
WO (1) WO1996026159A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005103165A1 (en) * 2004-04-26 2005-11-03 The South African Nuclear Energy Corporation Limited Production of inorganic doped-zircon pigments

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248595A (en) * 1967-12-14 1971-10-06 Ionarc Smelters Ltd N P L Process and apparatus for high enthalpy heat treatment
FR2125924A5 (en) * 1971-02-16 1972-09-29 Tetronics Research Devel
GB1447276A (en) * 1973-09-17 1976-08-25 Keeling Walker Ltd Production of calcined ceramic pigments
WO1985004158A1 (en) * 1984-03-21 1985-09-26 Ici Australia Limited Treatment of zircon
WO1995001313A1 (en) * 1993-06-30 1995-01-12 Technological Resources Pty. Ltd. Zirconia based opacifiers
WO1995035260A1 (en) * 1994-06-17 1995-12-28 Atomic Energy Corporation Of South Africa Limited Process for treating silica-bearing material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248595A (en) * 1967-12-14 1971-10-06 Ionarc Smelters Ltd N P L Process and apparatus for high enthalpy heat treatment
FR2125924A5 (en) * 1971-02-16 1972-09-29 Tetronics Research Devel
GB1447276A (en) * 1973-09-17 1976-08-25 Keeling Walker Ltd Production of calcined ceramic pigments
WO1985004158A1 (en) * 1984-03-21 1985-09-26 Ici Australia Limited Treatment of zircon
WO1995001313A1 (en) * 1993-06-30 1995-01-12 Technological Resources Pty. Ltd. Zirconia based opacifiers
WO1995035260A1 (en) * 1994-06-17 1995-12-28 Atomic Energy Corporation Of South Africa Limited Process for treating silica-bearing material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005103165A1 (en) * 2004-04-26 2005-11-03 The South African Nuclear Energy Corporation Limited Production of inorganic doped-zircon pigments
US7918932B2 (en) 2004-04-26 2011-04-05 The South African Nuclear Energy Corporation Limited Production of inorganic doped-zircon pigments

Also Published As

Publication number Publication date
AU5172796A (en) 1996-09-11

Similar Documents

Publication Publication Date Title
JP4654037B2 (en) Plasma synthesis of metal oxide nanopowders and apparatus therefor
JP3180911B2 (en) Processing equipment for processing materials under reducing conditions
AU701603B2 (en) Compositions comprising fused particulates and methods of making them
TW593181B (en) Process for preparing batch materials for the manufacture of glass
CA2557832C (en) Liquid feed flame spray modification of nanoparticles
US3493403A (en) High titania glass articles and process
EP0335875B1 (en) Vitreous silica
EP0951442B1 (en) Treatment of mineral particles
EP1997778A1 (en) High-purity silica powder and process for producing it
EP1027286A1 (en) Process and apparatus for preparing precipitated calcium carbonate
EP0603998B1 (en) Method for the calcination of limestone
DE1947099C3 (en) Process for the preparation of spherical alumina-silica-containing solid particles
JP3553499B2 (en) Method and apparatus for heat treatment of fine particulate matter in a coarse-grained fluidized bed
CN112456548A (en) Titanium tetrachloride production system and method
US4755368A (en) Silica fillers from silicon powder
WO1996026159A1 (en) Treatment of zircon
NO116198B (en)
US4462815A (en) Scrap glass recovery
US3022137A (en) Combustion of titanium tetrachloride with oxygen
MY122205A (en) Low abrasion calcined kaolin pigments and enhanced filtration method
GB2182650A (en) Finely divided alumina and its manufacture
JPH02199013A (en) Production of fine fused spherical silica
AU692893B2 (en) Process for treating silica-bearing material
EP0205443B1 (en) Treatment of zircon
AU6022796A (en) Method and apparatus for making high-grade alumina from low- grade aluminum oxide fines

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BB BG BR BY CA CH CN CZ DE DK EE ES FI GB GE HU IS JP KE KG KP KR KZ LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG US UZ VN AZ BY KG KZ MD RU TJ

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): KE LS MW SD SZ UG AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase