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US6894307B2 - Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices - Google Patents

Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices Download PDF

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US6894307B2
US6894307B2 US10/355,316 US35531603A US6894307B2 US 6894307 B2 US6894307 B2 US 6894307B2 US 35531603 A US35531603 A US 35531603A US 6894307 B2 US6894307 B2 US 6894307B2
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intersystem crossing
crossing agent
emissive
layer
molecule
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Stephen R. Forrest
Mark E. Thompson
Marc A. Baldo
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Princeton University
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18Carrier blocking layers
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    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H10K50/121OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
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    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10Transparent electrodes, e.g. using graphene
    • H10K2102/101Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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Definitions

  • the present invention is directed to organic light emitting devices (OLEDs) comprised of emissive layers that contain an organic compound functioning as an emitter and a separate intersystem crossing (“ISC”) entity which operates to enhance the efficiency of the emission.
  • OLEDs organic light emitting devices
  • ISC intersystem crossing
  • the claimed invention was made by, on behalf of, and/or in connection with one or more of the following parties to a joint university-corporation research agreement: Princeton University, The University of Southern California, and the Universal Display Corporation.
  • the agreement was in effect on and before the date the claimed invention was made, and the claimed invention was made as a result of activities undertaken within the scope of the agreement.
  • OLEDs Organic light emitting devices
  • one of the layers is comprised of an organic material that can be made to electroluminesce by applying a voltage across the device, C. W. Tang et al., Appl. Phys. Lett. 1987, 51, 913.
  • Certain OLEDs have been shown to have sufficient brightness, range of color and operating lifetimes for use as a practical alternative technology to LCD-based full color flat-panel displays (S. R. Forrest, P. E. Burrows and M. E. Thompson. Laser Focus World, February 1995).
  • a transparent OLED which represents a significant step toward realizing high resolution, independently addressable stacked R-G-B pixels, was reported in International Patent Application No. PCT/US97/02681 in which the TOLED had greater than 71% transparency when turned off and emitted light from both top and bottom device surfaces with high efficiency (approaching 1% quantum efficiency) when the device was turned on.
  • the TOLED used transparent indium tin oxide (ITO) as the hole-injecting electrode and a Mg-Ag-ITO electrode layer for electron-injection.
  • ITO transparent indium tin oxide
  • Mg-Ag-ITO electrode layer for electron-injection.
  • a device was disclosed in which the ITO side of the Mg-Ag-ITO layer was used as a hole-injecting contact for a second, different color-emitting OLED stacked on top of the TOLED.
  • Each layer in the stacked OLED was independently addressable and emitted its own characteristic color. This colored emission could be transmitted through the adjacently stacked, transparent, independently addressable, organic layer or layers, the transparent contacts and the glass substrate, thus allowing the device to emit any color that could be produced by varying the relative output of the red and blue color-emitting layers.
  • PCT/US95/15790 application disclosed an integrated SOLED for which both intensity and color could be independently varied and controlled with external power supplies in a color tunable display device.
  • the PCT/US95/15790 application thus, illustrates a principle for achieving integrated, full color pixels that provide high image resolution, which is made possible by the compact pixel size.
  • relatively low cost fabrication techniques as compared with prior art methods, may be utilized for making such devices.
  • Luminescence from a symmetry-disallowed process is known as phosphorescence. Characteristically, phosphorescence may persist for up to several seconds after excitation due to the low probability of the transition. In contrast, fluorescence originates in the rapid decay of a singlet exciton. Since this process occurs between states of like symmetry, it may be very efficient.
  • This invention pertains to the use of intersystem crossing agents to enhance emission efficiency in organic light emitting devices.
  • An intersystem crossing agent, or molecule is one which can undergo intersystem crossing, which involves the transfer of population between states of different spin multiplicity. Lists of known intersystem crossing agents, or molecules, are given in A. Gilbert and J. Baggott, Essentials of Molecular Photochemistry, Blackwells Scientific, 1991.
  • the ISC agent traps the energy of excitons and transfers the energy to the fluorescent emitter by a Förster energy transfer.
  • the energy transfer process desired is: 3 D*+ 1 A ⁇ 1 D+ 1 A* (Eq. 1)
  • D and A represent a donor molecule and a fluorescent acceptor, respectively.
  • the superscripts 3 and 1 denote the triplet and singlet states, respectively, and the asterisk indicates the excited state.
  • a second embodiment of the present invention we focus on a way to use an intersystem crossing agent to increase efficiency in a system with a phosphorescent emitter.
  • the ISC agent is responsible for converting all of the excitons from a host material into their triplet states and then transferring that excited state to the phosphorescent emitter. This would include the case wherein the ISC agent only traps singlet excitons on the host and host triplet excitons are transferred directly to the phosphorescent emitter (rather than going through the ISC agent.)
  • a phosphorescent emitter is combined with an intersystem crossing agent such that the following can occur:
  • the intersystem crossing agent acts to convert singlet excitons to triplet excitons, thereby keeping singlets from reaching the emissive region and thus enhancing optical purity (the “filter” aspect: singlets are removed and thus no singlets emit) and increasing efficiency (the “conversion” aspect: singlets are converting to triplets, which do emit).
  • dipoles on the donor and acceptor molecules couple and energy may be transferred. Dipoles are generated from allowed transitions in both donor and acceptor molecules. This typically restricts the Förster mechanism to transfers between singlet states.
  • the transition on the donor ( 3 D* ⁇ 1 D) is allowed, i.e. the donor is a phosphorescent molecule.
  • the probability of this transition is low because of symmetry differences between the excited triplet and ground state singlet.
  • the phosphor can emit light due to some perturbation of the state such as due to spin-orbit coupling introduced by a heavy metal atom, it may participate as the donor in Förster transfer.
  • the efficiency of the process is determined by the luminescent efficiency of the phosphor (F Wilkinson, in Advances in Photochemistry (eds. W. A. Noyes G. Hammond, and J. N. Pitts. pp. 241-268, John Wiley & Sons. New York, 1964), i.e. if a radiative transition is more probable than a non-radiative decay, then energy transfer will be efficient.
  • Such triplet-singlet transfers were predicted by Förster (T.
  • Example 1 of this application we use the green phosphor fac tris(2-phenylpyridine) iridium (Ir(ppy) 3 ; M. A. Baldo, et al., Appl. Phys. Lett., 1999, 75, 4-6) and the red fluorescent dye [2 methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl) ethenyl]-4H-pyran-ylidene] propane-dinitrile] (“DCM2”; C. W.
  • Another approach is to dope both the phosphorescent donor and the fluorescent acceptor into a host material.
  • the energy can then cascade from the host, through the phosphor sensitizing molecule and into the fluorescent dye following the equations (collectively Eq. 2): 3 D*+ 1 X ⁇ 1 D+ 3 X* 3 X*+ 1 A ⁇ 1 X+ 1 A* 1 A* ⁇ 1 A+h ⁇ (2a) 1 D*+ 1 X ⁇ 1 D+ 1 X* 1 X* ⁇ 3 X* 3 X*+ 1 A ⁇ 1 X+ 1 A* ⁇ 1 A+h ⁇ (2b) wherein X represents the sensitizer molecule and h ⁇ is the photon energy.
  • FIG. 1 The multiple state energy transfer required in the phosphorescent-sensitized system is schematically described in FIG. 1 .
  • Dexter transfers are indicated by dotted arrows, and Förster transfers by solid arrows. Transfers resulting in a loss in efficiency are marked with a cross.
  • direct electron-hole recombination is possible on the phosphorescent and fluorescent dopants as well as the host.
  • Triplet exciton formation after charge recombination on the fluorescent dye is another potential loss mechanism.
  • Example 1 The details, given in Example 1 below, showed the improvement in efficiency of fluorescent yield brought about by the use of the phosphorescent sensitizer. In the following sections, we give additional background.
  • OLEDs are comprised of at least two thin organic layers separating the anode and cathode of the device.
  • the material of one of these layers is specifically chosen based on the material's ability to transport holes, a “hole transporting layer” (HTL), and the material of the other layer is specifically selected according to its ability to transport electrons, an “electron transporting layer” (ETL).
  • HTL hole transporting layer
  • ETL electron transporting layer
  • the device can be viewed as a diode with a forward bias when the potential applied to the anode is higher than the potential applied to the cathode.
  • the anode injects holes (positive charge carriers) into the hole transporting layer, while the cathode injects electrons into the electron transporting layer.
  • the portion of the luminescent medium adjacent to the anode thus forms a hole injecting and transporting zone while the portion of the luminescent medium adjacent to the cathode forms an electron injecting and transporting zone.
  • the injected holes and electrons each migrate toward the oppositely charged electrode. When an electron and hole localize on the same molecule, a Frenkel exciton is formed.
  • the electroluminescent layer comprises a luminescence zone receiving mobile charge carriers (electrons and holes) from each electrode.
  • triplet diffusion lengths are typically long (e.g., >1400 ⁇ ) compared with typical singlet diffusion lengths of about 200 ⁇ .
  • an advantage of phosphorescence is that all excitons (formed by the recombination of holes and electrons in an EL), which are (in part) triplet-based in phosphorescent devices, may participate in energy transfer and luminescence in certain electroluminescent materials. In contrast, only a small percentage of excitons in fluorescent devices, which are singlet-based, result in fluorescent luminescence.
  • An alternative is to use phosphorescence processes to improve the efficiency of fluorescence processes. Fluorescence is in principle 75% less efficient due the three times higher number of symmetric excited states.
  • a phosphorescent sensitizer molecule to excite a fluorescent material in a red-emitting OLED.
  • the mechanism for energetic coupling between molecular species is a long-range, non-radiative energy transfer from the phosphor to the fluorescent dye.
  • the internal efficiency of fluorescence can be as high as 100%, a result previously only possible with phosphorescence. As shown in Example 1, we employ it to nearly quadruple the efficiency of a fluorescent OLED.
  • one typically has at least one electron transporting layer and at least one hole transporting layer one has layers of different materials, forming a heterostructure.
  • the materials that produce the electroluminescent emission may be the same materials that function either as the electron transporting layer or as the hole transporting layer.
  • Such devices in which the electron transporting layer or the hole transporting layer also functions as the emissive layer are referred to as having a single heterostructure.
  • the electroluminescent material may be present in a separate emissive layer between the hole transporting layer and the electron transporting layer in what is referred to as a double heterostructure.
  • the separate emissive layer may contain the emissive molecule doped into a host or the emissive layer may consist essentially of the emissive molecule.
  • the emissive material may be present in relatively low concentrations as a dopant in the charge carrier layer.
  • the predominant material in the charge carrier layer may be referred to as a host compound or as a receiving compound.
  • Materials that are present as host and dopant are selected so as to have a high level of energy transfer from the host to the dopant material. In addition, these materials need to be capable of producing acceptable electrical properties for the OLED.
  • host and dopant materials are preferably capable of being incorporated into the OLED using materials that can be readily incorporated into the OLED by using convenient fabrication techniques, in particular, by using vacuum-deposition techniques.
  • the exciton blocking layer used in the devices of the present invention substantially blocks the diffusion of excitons, thus substantially keeping the excitons within the emission layer to enhance device efficiency.
  • the material of blocking layer of the present invention is characterized by an energy difference (“band gap”) between its lowest unoccupied molecular orbital (LUMO) and its highest occupied molecular orbital (HOMO) In accordance with the present invention, this band gap substantially prevents the diffusion of excitons through the blocking layer, yet has only a minimal effect on the turn-on voltage of a completed electroluminescent device.
  • the band gap is thus preferably greater than the energy level of excitons produced in an emission layer, such that such excitons are not able to exist in the blocking layer.
  • the band gap of the blocking layer is at least as great as the difference in energy between the triplet state and the ground state of the host.
  • the ionization potential of the blocking layer should be greater than that of the HTL, while the electron affinity of the blocking layer should be approximately equal to that of the ETL to allow for facile transport of electrons.
  • OLEDs As to colors, it is desirable for OLEDs to be fabricated using materials that provide electroluminescent emission in a relatively narrow band centered near selected spectral regions, which correspond to one of the three primary colors, red, green and blue so that they may be used as a colored layer in an OLED or SOLED. It is also desirable that such compounds be capable of being readily deposited as a thin layer using vacuum deposition techniques so that they may be readily incorporated into an OLED that is prepared entirely from vacuum-deposited organic materials.
  • the present invention is directed to organic light emitting devices comprising an emissive layer wherein the emissive layer comprises an emissive molecule, with a host material (wherein the emissive molecule present as a dopant in said host material) which molecule is adapted to luminesce when a voltage is applied across a heterostructure, wherein the emissive molecule is selected from the group of phosphorescent or fluorescent organic molecules and wherein the device comprises a molecule which can function as an intersystem crossing agent (“ISC molecule”) which improves the efficiency of the phosphorescence or fluorescence relative to the situation where the ISC molecule is absent.
  • ISC molecule intersystem crossing agent
  • a fluorescent emitter is combined with a phosphorescent sensitizer, which operates as an intersystem crossing agent.
  • the phosphorescent sensitizer may be selected from materials wherein the radiative recombination rate is much greater than the non-radiative rate of recombination.
  • the phosphorescent sensitizer may be selected from the group of cyclometallated organometallic compounds.
  • the metal thereof may be selected from metals of the third row of the periodic table (especially W, Pt, Au, Ir, Os) and any other metals or metal compounds that have strong spin orbit coupling.
  • the phosphorescent sensitizer may be further selected from the group of phosphorescent organometallic iridium or osmium complexes and may be still further selected from the group of phosphorescent cyclometallated iridium or osmium complexes.
  • a specific example of the sensitizer molecule is fac tris(2-phenylpyridine) iridium, denoted (Ir(ppy) 3 ) of formula [In this, and later figures herein, we depict the dative bond from nitrogen to metal (here, Ir) as a straight line.]
  • DCM2 of formula
  • a phosphorescent emitter is combined with an intersystem crossing agent such that the following can occur: D*+ 1 X ⁇ 1 D+ 1 X* 1 X* ⁇ 3 X* 3 X*+ 1 A ⁇ 1 X+ 3 A* 3 A* ⁇ 1 A+h ⁇ wherein D represents the donor (host), X represents the intersystem crossing agent, and A represents the acceptor (emissive molecule).
  • D represents the donor (host)
  • X represents the intersystem crossing agent
  • A represents the acceptor (emissive molecule).
  • Superscript 1 denotes singlet spin multiplicity; superscript 3 denotes triplet spin multiplicity and the asterisk denotes an excited state.
  • a thin layer of an ISC agent is placed in the device; it may be between the HTL and ETL.
  • the ISC agent is selected such that the optical absorption spectrum of the ISC agent overlaps strongly with the emission line of the material found at the site of recombination.
  • the general arrangement of the heterostructure of the devices is such that the layers are ordered hole transporting layer, emissive layer, and electron transporting layer.
  • a hole conducting emissive layer one may have an exciton blocking layer between the emissive layer and the electron transporting layer.
  • an electron conducting emissive layer one may have an exciton blocking layer between the emissive layer and the hole transporting layer.
  • the emissive layer may be equal to the hole transporting layer (in which case the exciton blocking layer is near or at the anode) or to the electron transporting layer (in which case the exciton blocking layer is near or at the cathode).
  • the emissive layer may be formed with a host material in which the emissive molecule resides as a guest.
  • the host material may be a hole-transporting matrix selected from the group of substituted tri-aryl amines.
  • An example of a host material is 4,4′-N,N′-dicarbazole-biphenyl (CBP), which has the formula
  • the emissive layer may also contain a polarization molecule, present as a dopant in said host material and having a dipole moment, that affects the wavelength of light emitted when said emissive dopant molecule luminesces.
  • a layer formed of an electron transporting material is used to transport electrons into the emissive layer comprising the emissive molecule and the optional host material.
  • the electron transport material may be an electron-transporting matrix selected from the group of metal quinoxolates, oxidazoles and triazoles.
  • An example of an electron transport material is tris-(8-hydroxyquinoline) aluminum (Alq 3 ).
  • a layer formed of a hole transporting material is used to transport holes into the emissive layer comprising the emissive molecule and the optional host material.
  • a hole transporting material is 4.4′-bis[N-(1-naphthyl)-N-phenyl-amino] biphenyl [“ ⁇ -NPD”].
  • an exciton blocking layer (“barrier layer”) to confine excitons within the luminescent layer (“luminescent zone”) is greatly preferred.
  • the blocking layer may be placed between the luminescent layer and the electron transport layer.
  • An example of a material for such a barrier layer is 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (also called bathocuproine or BCP), which has the formula
  • FIG. 1 Proposed energy transfer mechanisms in the multi-step system. Ideally, all excitons are transferred to the singlet state of the fluorescent dye, as triplets in the dye non-radiatively recombine. Förster transfers are represented by solid lines and Dexter transfers by dotted lines. Electron-hole recombination creates singlet and triplet excitons in the host material. These excitons are then transferred to the phosphorescent sensitizer. There is also a lower probability of direct transfer to the fluorescent dye by Förster transfer into the singlet state, or Dexter transfer into the triplet state. This latter mechanism is a source of loss and this is signified in the figure by a cross.
  • Singlet excitons in the phosphor are then subject to intersystem crossing (ISC) and transfer to the triplet state.
  • ISC intersystem crossing
  • the triplets may either dipole-dipole couple with the singlet state of the fluorescent dye or in another loss mechanism, they may Dexter transfer to the triplet state.
  • electron-hole recombination is also possible on the phosphor and fluorescent dye.
  • Direct formation of triplets on the fluorescent dye is an additional loss.
  • Inset The structure of electroluminescent devices fabricated in this work. The multiple doped layers are an approximation to a mixed layer of CBP: 10% Ir(ppy) 3 : 1% DCM2. Two variants were also made.
  • Second device The Ir(ppy) 3 was exchanged with Alq 3 to examine the case where the intermediate step is fluorescent and not phosphorescent.
  • Third device Separately, a device containing a luminescent layer of CBP: 1% DCM2 was made to examine direct transfers between CBP and DCM2.
  • FIG. 2 The external quantum efficiencies of DCM2 emission in the three devices.
  • the sensitizing action of Ir(ppy) 3 clearly improves the efficiency.
  • FIG. 3 In the spectra of the three devices, characteristic peaks are observed for CBP ( ⁇ ⁇ 400 nm), TPD ( ⁇ ⁇ 420 nm), Alq 3 ( ⁇ ⁇ 490 nm) Ir(ppy) 3 ( ⁇ ⁇ 400 nm) and DCM2 ( ⁇ ⁇ 590 nm). Approximately 80% of the photons in the Ir(ppy) 3 device are emitted by DCM2. All spectra were recorded at a current density of ⁇ 1 mA/cm 2 .
  • FIG. 4 The transient response of the DCM2 and Ir(ppy)3 components in the CBP: 10% Ir(ppy) 3 : 1% DCM2 device.
  • the transient lifetime of DCM2 is ⁇ 1 ns, thus in the case of energy transfer from Ir(ppy) 3 , the response of DCM2 should be governed by the transient lifetime of Ir(ppy) 3 .
  • singlet transfer to DCM2 is observed, resulting in the ripples in the transient response.
  • FIG. 5 Schematic of device containing a layer of ISC agent between ETL and HTL.
  • FIG. 6 IV characteristics for the device described in Example 5/FIG. 5 .
  • the present invention is directed to organic light emitting devices (OLEDs) comprised of emissive layers that contain an organic compound functioning as an emitter and a separate intersystem crossing (“ISC”) molecule which operates to enhance the efficiency of the emission.
  • OLEDs organic light emitting devices
  • ISC intersystem crossing
  • spectral overlap there be substantial spectral overlap between the ISC molecule and the emissive molecule.
  • One way of measuring spectral overlap is by integrating absorption and emission spectra over the range of energies (wavenumbers) over which both spectra have non-zero values. This approach is related to that taken in Equation 2(a) of A. Shoustikov, Y. You, and M. E. Thompson, “Electroluminescence Color Tuning by Dye Doping in Organic Light Emitting Diodes,” IEEE Journal of Special Topics in Quantum Electronics, 1998, 4, 3-14.
  • One approach is to normalize the absorption and emission spectra to integrated intensities of one.
  • An embodiment of the present invention is generally directed to phosphorescent sensitizers for fluorescent emissive molecules, which luminesce when a voltage is applied across a heterostructure of an organic light-emitting device and which sensitizers are selected from the group of phosphorescent organometallic complexes, and to structures, and correlative molecules of the structures, that optimize the emission of the light-emitting device.
  • organometallic is as generally understood by one of ordinary skill, as given, for example, in “Inorganic Chemistry” (2nd edition) by Gary L. Miessler and Donald A. Tarr, Prentice-Hall (1998).
  • the invention is further directed to sensitizers within the emissive layer of an organic light-emitting device which molecules are comprised of phosphorescent cyclometallated iridium complexes. Discussions of the appearance of color, including descriptions of CIE charts, may be found in Color Chemistry, VCH Publishers, 1991 and H. J. A. Dartnall, J. K. Bowmaker. and J. D. Mollon, Proc. Roy. Soc. B (London), 1983, 220, 115-130.
  • Organic layers were deposited by a high vacuum (10 ⁇ 6 Torr) thermal evaporation onto a clean glass substrate pre-coated with a 1400 ⁇ -thick layer of transparent and conductive indium tin oxide.
  • a 600 ⁇ -thick layer of N,N′-diphenyl-NN-bis(3-methylphenyl)-[1,1′-biphenyl]-4,4′diamine [“TPD”] is used to transport holes to the luminescent layer.
  • the luminescent layer consisted of an alternating series of 10 ⁇ -thick layers of CBP doped to 10% (by mass) of Ir(ppy) 3 , and 10 ⁇ thick layers of CBP doped to 1% (by mass) of DCM2.
  • Excitons were confined within the luminescent region by a 200 ⁇ -thick layer of the exciton-blocking material 2,9-dimethyl-4,7-diphenyl -1.10-phenanthroline (also called bathcuproine, or BCP).
  • a 300 ⁇ -thick layer of the electron transport material tris-(8-hydroxyquinoline) aluminum (“Alq 3 ”) is used to transport electrons to the luminescent region and to reduce absorption at the cathode.
  • a shadow mask with 1 mm-diameter openings was used to define the cathodes consisting of a 100 ⁇ -thick layer of 25:1 Mg:Ag, with a 500 ⁇ -thick cap.
  • the compound Ir(ppy) 3 [sensitizer/ISC agent in Example 1] has the following formulaic representation:
  • Example 2 As one control, a device was created as in Example 1, except that Ir(ppy) 3 was replaced by Alq 3 , which has similar emission and absorption spectra, but no observable phosphorescence at room temperature.
  • Example 2 As a second control, a device was created as in Example 1, except that the intermediate energy transfer step was omitted to examine direct energy transfer from CBP to DCM2.
  • the external quantum efficiency (photons per electron) as a function of injection current of the DCM2 portion of the emission spectrum for each example is given in FIG. 2 .
  • the DCM2 emission efficiency of the device containing the phosphorescent sensitizer is significantly higher than its fluorescent analog. Indeed, the peak efficiency of(3.3 ⁇ 0.1) %, significantly higher than the best result of ⁇ 2% observed for DCM2 in previous studies (C. H. Chen, C. W. Tang, J. Shi, and K. P. Klubeck, “Improved red dopants for organic luminescent devices,” Macromolecular Symposia, 1997, 125, 49-58)). This demonstrates that host triplets are transferred to the fluorescent singlet state in Example 1.
  • the emission spectra of the OLEDs of the three examples are given in FIG. 3 . All devices show energy transfer to the fluorescent dye. By taking the area under the various spectral peaks, we find that approximately 80% of photons are emitted by DCM2 in the device containing the Ir(ppy) 3 sensitizer. The remainder contribute to CBP luminescence at ⁇ ⁇ 400 nm, TPD luminescence at ⁇ ⁇ 420 nm, and Ir(ppy) 3 luminescence at ⁇ ⁇ 500 nm. In the device doped with 10% Alq 3 , an emission peak is observed at ⁇ ⁇ 490 nm. This is consistent with observations of Alq 3 emission in a non-polar host (CBP). (V. Bulovic. R. Deshpande, M. E. Thompson, and S. R Forrest, “Tuning the color emission of thin film molecular organic light emitting devices by the solid state solvation effect,” Chemical Physics Letters (1999).
  • FIG. 4 Conclusive evidence of the energy transfer process in Eq. 2 is shown in FIG. 4 , which illustrate the transient behavior of the DCM2 and Ir(ppy) 3 components of the emission spectra. These data were obtained by applying a ⁇ 100 ns electrical pulse to the electroluminscent device The resulting emission was measured with a streak camera. If a fraction of the DCM2 emission originates via transfer from Ir(ppy) 3 triplets (Eq. 2), then the proposed energy transfer must yield delayed DCM2 fluorescence. Furthermore, since the radiative lifetime of DCM2 is much shorter than that of Ir(ppy) 3 , the transient decay of DCM2 should match that of Ir(ppy) 3 .
  • the DCM2 decay does indeed follow the Ir(ppy) 3 decay.
  • the transient lifetime of Ir(ppy) 3 in this system is ⁇ 100 ns, compared to a lifetime of ⁇ 500 ns in the absence of DCM2, confirming an energy transfer of ⁇ 80%.
  • the decrease in the triplet lifetime as a result of energy transfer to the fluorescent acceptor is advantageous. Not only does it increase the transient response of the system but also it has been shown that the probability of triplet-triplet annihilation varies inversely with the square of the triplet lifetime.
  • the three examples demonstrate a general technique for improving the efficiency of fluorescence in guest-host organic systems. Further improvement may be expected by mixing the host, phosphorescent sensitizer, and fluorescent dye rather than doping in thin layers as in this work, although the thin layer approach inhibits direct Dexter transfer of triplets from the host to the fluorophore where they would be lost.
  • an ideal system may incorporate low concentrations of a sterically hindered dye. For example, adding spacer groups to the DCM2 molecule should decrease the probability of Dexter transfer to the dye while minimally affecting its participation in Förster transfer or its luminescence efficiency.
  • Dexter transfer can be understood as the simultaneous transfer of an electron and a hole, steric hindrance may also reduce the likelihood of charge trapping on the fluorescent dye. Similar efforts have already reduced non-radiative excimer formation in a DCM2 variant [Chen, Tang, Shi and Klubeck, “Improved red dopants for organic EL Devices, Macromolecular Symposia. 1997, 125, 49-58]. Also, optimization of the device structure will reduce Ir(ppy) 3 emission to lower levels.
  • the second embodiment is directed to the situation wherein the emissive molecule is phosphorescent and the use of intersystem crossing molecules enhances the efficiency of the phosphorescent emission.
  • An OLED is fabricated with a traditional diamine hole transporter and an electron transporting layer (ETL) composed of three different materials.
  • the ETL is roughly 80% a traditional electron transporting material (such as Zrq4), 15% an intersystem crossing agent (such as benzil; other ISC agents may be found in the reference of Gilbert and Baggott) and 5% a phosphorescent emitter (such as PtOEP, platinum octaethyl porphyrin).
  • the ISC agent is chosen so that its absorption spectrum overlaps strongly with the ETL's fluorescence spectrum. Hole electron recombination occurs at or near the HTL/ETL interface generating a mixture of singlet and triplet excitons.
  • the singlet excitons on the ETL will efficiently transfer their energy to the ISC agent, which will efficiently intersystem cross to its triplet state, via a n ⁇ * state or some other suitable process.
  • the triplet energy of the ISC agent will then transfer to the dopant and emission will occur at the phosphorescent dopant.
  • Triplet excitons formed on the ETL will either transfer directly to the dopant or energy transfer to the ISC agent, which will transfer that energy to the dopant as described.
  • the ISC agent in this application is designed to completely quench singlet excitons giving a good yield of triplet excitons for transfer to the phosphorescent dopant.
  • the chemical formula of Zrq 4 is V.C. Use of Intersystem Crossing Agent as Filter and Converter
  • a thin layer of an ISC agent is placed between the HTL and ETL.
  • the ISC agent is selected such that the optical absorption spectrum of the ISC agent overlaps strongly with the emission line of the material found at the site of recombination.
  • ISC-F 2,7 diphenyl fluorenone
  • An ISC agent suitable for the filter/converter embodiment can be selected from the group consisting of acridines, acridones, brominated polycyclic aromatic compounds, anthraquinones, alpha-beta-diketones, phenazines, benzoquinones, biacetyls, fullerenes, thiophenes, pyrazines, quinoxalines, and thianthrenes.
  • FIGS. 5 and 6 we present control experiments for a device without a phosphorescent dopant emitter.
  • An example of the third embodiment can have a phosphorescent emitter in the ETL layer.
  • the structure of the device for this example is given schematically in FIG. 5 . It is made of a heterostructure with ⁇ -NPD/ISC-F/Alq3. (The Alq3 layer is not doped).
  • the IV characteristic of the device is given in FIG. 6 .
  • the device area here is 3.14 mm 2
  • the key point is that there is no light at low to medium bias. This result shows that the ISC filter/converter certainly quenches singlets. [At very high biases (>17 Volts) weak green emission can be observed.
  • the spectrum of this output shows that it is from Alq3. To explain the emission, either there are electrons leaking through to Alq3 at high bias or the ISC-F is transferring energy back to the singlet in Alq3.]
  • the Alq3 region is doped with a phosphorescent emitter.
  • a phosphorescent emitter we would know that triplet excitons have been efficiently injected into the Alq3 layer because of phosphorescent emission arising from the doped emitter.
  • the 2,7-diphenyl fluorenone (“ISC-F”) transports electrons to the ⁇ -NPD/ISC-F interface. Hole/electron recombination at or near this interface leads to both singlet and triplet excitons. Both of these excitons will be readily transferred to the ISC-F layer. Any singlet that transfers to the ISC-F layer (or is formed in it) will rapidly intersystem cross to a triplet. Thus, all of the excitons present will be efficiently converted to triplets within the device.
  • the triplet excitons will diffuse through the ISC-F layer and transfer to the Alq 3 layer.
  • the transfer to Alq 3 should be facile.
  • the triplet energy of Alq 3 is not exactly known, it is believed to be between 550 and 600 nm. This is exactly in the correct region to efficiently trap triplet excitons from ISC-F.
  • Using the ISC agent in this way we prevent singlet excitons from ever reaching the emissive region of the device. By doping the emissive region with a phosphorescent dye, we an efficiently extract the energy luminescently.
  • the ISC agent here is acting as a filter which only allows triplet excitons to be injected into the Alq 3 layer.
  • ISC filter/converter The requirements for such an ISC filter/converter are that it have both singlet and triplet energies below that of the material that is at or near the site of recombination ( ⁇ -NPD in the example) and a triplet energy higher than the emissive region (which must not be the site of recombination. Alq 3 in the example). The material must have a high ISC efficiency.
  • spectral overlap between the emissive molecule and the intersystem crossing molecule.
  • the nature of the overlap may depend upon the use of the device, which uses include a larger display, a vehicle, a computer, a television, a printer, a large area wall, theater or stadium screen, a billboard and a sign.
  • display applications of the device of the present invention there should be spectral overlap in the visible spectrum.
  • the overlap of the emission with the human photopic response may not be required.
  • the embodiment of the present invention for enhancing fluorescent emission is not limited to the sensitizer molecule of the examples.
  • ligands one of ordinary skill may modify the organic component of the Ir(ppy) 3 (directly below) to obtain desirable properties.
  • These molecules, related to Ir(ppy) 3 can be formed from commercially available ligands.
  • the R groups can be alkyl or aryl and are preferably in the 3, 4, 7 and/or 8 positions on the ligand (for steric reasons).
  • Other possible sensitizers are illustrated below. This molecule is expected to have a blue-shifted emission compared to Ir(ppy) 3 .
  • R and R′ can independently be alkyl or aryl.
  • Organometallic compounds of osmium may be used in this invention. Examples are the following. These osmium complexes will be octahedral with 6d electrons (isoelectric with the Ir analogs) and may have good intersystem crossing efficiency.
  • R and R′ are independently selected from the group consisting of alkyl and aryl. They are believed to be unreported in the literature.
  • X can be selected from the group consisting of N or P, R and R′ are independently selected from the group alkyl and aryl.
  • a molecule for the hole-transporting layer of the invention is depicted below.
  • the invention will work with other hole-transporting molecules known by one of ordinary skill to work in hole transporting layers of OLEDs.
  • a molecule used as the host in the emissive layer of the invention is depicted below.
  • the invention will work with other molecules known by one of ordinary skill to work as hosts of emissive layers of OLEDs.
  • the host material could be a hole-transporting matrix and could be selected from the group consisting of substituted tri-aryl amines and polyvinylcarbazoles.
  • Example 1 The molecule used as the exciton blocking layer of Example 1 is depicted below. The invention will work with other molecules used for the exciton blocking layer, provided they meet the requirements given herein.
  • the OLED of the present invention may be used in substantially any type of device which is comprised of an OLED, for example, in OLEDs that are incorporated into a larger display, a vehicle, a computer, a television, a printer, a large area wall, theater or stadium screen, a billboard or a sign.
  • the present invention as disclosed herein may be used in conjunction with co-pending applications: “High Reliability, High Efficiency, Integratable Organic Light Emitting Devices and Methods of Producing Same”, Ser. No. 08/774,119 (filed Dec. 23, 1996); “Novel Materials for Multicolor Light Emitting Diodes”, Ser. No. 08/850,264 (filed May 2, 1997); “Electron Transporting and Light Emitting Layers Based on Organic Free Radicals”. Ser. No. 08/774,120 (filed Dec. 23, 1996); “Multicolor Display Devices”, Ser. No. 08/772,333 (filed Dec. 23. 1996); “Red-Emitting Organic Light Emitting Devices (OLED's)”, Ser. No.

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Abstract

Organic light emitting devices are described wherein the emissive layer comprises a host material containing a fluorescent or phosphorescent emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the heterostructure, wherein an intersystem crossing molecule of optical absorption spectrum matched to the emission spectrum of the emissive molecule enhances emission efficiency.

Description

CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of U.S. Ser. No. 09/915,130, filed Jul. 25, 2001 now U.S. Pat. No. 6,515,298 (which is incorporated herein by reference in its entirety), which is a continuation of U.S. Ser. No. 09/358,731, filed Jul. 21, 1999, now U.S. Pat. No. 6,310,360.
GOVERNMENT RIGHTS
This invention was made with Government support under Contract No. F33615-94-1-1414 awarded by DARPA. The government has certain rights in this invention.
I. FIELD OF INVENTION
The present invention is directed to organic light emitting devices (OLEDs) comprised of emissive layers that contain an organic compound functioning as an emitter and a separate intersystem crossing (“ISC”) entity which operates to enhance the efficiency of the emission.
RESEARCH AGREEMENTS
The claimed invention was made by, on behalf of, and/or in connection with one or more of the following parties to a joint university-corporation research agreement: Princeton University, The University of Southern California, and the Universal Display Corporation. The agreement was in effect on and before the date the claimed invention was made, and the claimed invention was made as a result of activities undertaken within the scope of the agreement.
II. BACKGROUND OF THE INVENTION
II. A. General Background
Organic light emitting devices (OLEDs) are comprised of several organic layers in which one of the layers is comprised of an organic material that can be made to electroluminesce by applying a voltage across the device, C. W. Tang et al., Appl. Phys. Lett. 1987, 51, 913. Certain OLEDs have been shown to have sufficient brightness, range of color and operating lifetimes for use as a practical alternative technology to LCD-based full color flat-panel displays (S. R. Forrest, P. E. Burrows and M. E. Thompson. Laser Focus World, February 1995). Since many of the thin organic films used in such devices are transparent in the visible spectral region, they allow for the realization of a completely new type of display pixel in which red (R), green (G), and blue (B) emitting OLEDs are placed in a vertically stacked geometry to provide a simple fabrication process, a small R-G-B pixel size, and a large fill factor, International Patent Application No. PCT/US95/15790.
A transparent OLED (TOLED), which represents a significant step toward realizing high resolution, independently addressable stacked R-G-B pixels, was reported in International Patent Application No. PCT/US97/02681 in which the TOLED had greater than 71% transparency when turned off and emitted light from both top and bottom device surfaces with high efficiency (approaching 1% quantum efficiency) when the device was turned on. The TOLED used transparent indium tin oxide (ITO) as the hole-injecting electrode and a Mg-Ag-ITO electrode layer for electron-injection. A device was disclosed in which the ITO side of the Mg-Ag-ITO layer was used as a hole-injecting contact for a second, different color-emitting OLED stacked on top of the TOLED. Each layer in the stacked OLED (SOLED) was independently addressable and emitted its own characteristic color. This colored emission could be transmitted through the adjacently stacked, transparent, independently addressable, organic layer or layers, the transparent contacts and the glass substrate, thus allowing the device to emit any color that could be produced by varying the relative output of the red and blue color-emitting layers.
PCT/US95/15790 application disclosed an integrated SOLED for which both intensity and color could be independently varied and controlled with external power supplies in a color tunable display device. The PCT/US95/15790 application, thus, illustrates a principle for achieving integrated, full color pixels that provide high image resolution, which is made possible by the compact pixel size. Furthermore, relatively low cost fabrication techniques, as compared with prior art methods, may be utilized for making such devices.
II.B. Background of Emission
II.B.1. Basics
II.B.1a. Singlet and Triplet Excitons
Because light is generated in organic materials from the decay of molecular excited states or excitons, understanding their properties and interactions is crucial to the design of efficient light emitting devices currently of significant interest due to their potential uses in displays, lasers, and other illumination applications. For example, if the symmetry of an exciton is different from that of the ground state, then the radiative relaxation of the exciton is disallowed and luminescence will be slow and inefficient. Because the ground state is usually anti-symmetric under exchange of spins of electrons comprising the exciton, the decay of a symmetric exciton breaks symmetry. Such excitons are known as triplets, the term reflecting the degeneracy of the state. For every three triplet excitons that are formed by electrical excitation in an OLED, only one symmetric state (or singlet) exciton is created. (M. A. Baldo; D. F. O'Brien, M. E. Thompson and S. R. Forrest, Very high-efficiency green organic light-emitting devices based on electrophosphorescence, Applied Physics Letters, 1999, 75, 4-6.) Luminescence from a symmetry-disallowed process is known as phosphorescence. Characteristically, phosphorescence may persist for up to several seconds after excitation due to the low probability of the transition. In contrast, fluorescence originates in the rapid decay of a singlet exciton. Since this process occurs between states of like symmetry, it may be very efficient.
Many organic materials exhibit fluorescence from singlet excitons. However, only a very few have been identified which are also capable of efficient room temperature phosphorescence from triplets. Thus, in most fluorescent dyes, the energy contained in the triplet states is wasted. However, if the triplet excited state is perturbed, for example, through spin-orbit coupling (typically introduced by the presence of a heavy metal atom), then efficient phosphoresence is more likely. In this case, the triplet exciton assumes some singlet character and it has a higher probability of radiative decay to the ground state. Indeed, phosphorescent dyes with these properties have demonstrated high efficiency electroluminescence.
Only a few organic materials have been identified which show efficient room temperature phosphorescence from triplets. In contrast, many fluorescent dyes are known (C. H. Chen, J. Shi. and C. W. Tang, “Recent developments in molecular organic electroluminescent materials,” Macromolecular Symposia. 1997, 125, 1-48; U. Brackmann, Lambdachrome Laser Dyes (Lambda Physik, Gottingen, 1997) and fluorescent efficiencies in solution approaching 100% are not uncommon. (C. H. Chen, 1997, op. cit.) Fluorescence is also not affected by triplet-triplet annihilation, which degrades phosphorescent emission at high excitation densities. (M. A. Baldo, et al., “High efficiency phosphorescent emission from organic electroluminescent devices,” Nature, 1998, 395, 151-154; M. A. Baldo, M. E. Thompson, and S. R. Forrest, “An analytic model of triplet-triplet annihilation in electrophosphorescent devices,” 1999). Consequently, fluorescent materials are suited to many electroluminescent applications, particularly passive matrix displays.
II.B.1.b. Overview of Invention Relative to Basics
This invention pertains to the use of intersystem crossing agents to enhance emission efficiency in organic light emitting devices. An intersystem crossing agent, or molecule, is one which can undergo intersystem crossing, which involves the transfer of population between states of different spin multiplicity. Lists of known intersystem crossing agents, or molecules, are given in A. Gilbert and J. Baggott, Essentials of Molecular Photochemistry, Blackwells Scientific, 1991.
In one embodiment of the present invention, we focus on a way to use an intersystem crossing agent to increase efficiency in a system with a fluorescent emitter. Therein, we describe a technique whereby triplets formed in the host material are not wasted, but instead are transferred to the singlet excited state of a fluorescent dye. In this way, all excited states are employed and the overall efficiency of fluorescence increased by a factor of four. In this embodiment, the ISC agent traps the energy of excitons and transfers the energy to the fluorescent emitter by a Förster energy transfer. The energy transfer process desired is:
3D*+1A→1D+1A*  (Eq. 1)
Here, D and A represent a donor molecule and a fluorescent acceptor, respectively. The superscripts 3 and 1 denote the triplet and singlet states, respectively, and the asterisk indicates the excited state.
In a second embodiment of the present invention, we focus on a way to use an intersystem crossing agent to increase efficiency in a system with a phosphorescent emitter. Therein, we describe a technique whereby the ISC agent is responsible for converting all of the excitons from a host material into their triplet states and then transferring that excited state to the phosphorescent emitter. This would include the case wherein the ISC agent only traps singlet excitons on the host and host triplet excitons are transferred directly to the phosphorescent emitter (rather than going through the ISC agent.)
In this second embodiment wherein phosphorescent efficiency is enhanced, a phosphorescent emitter is combined with an intersystem crossing agent such that the following can occur:
1D*+1X→1D+1X*
1X*→3X*
3X*+1A→1X+3A*
3A*→1A+hν
wherein D represents the donor (host), X represents the intersystem crossing agent, and A represents the acceptor (emissive molecule). Superscript 1 denotes singlet spin multiplicity; superscript 3 denotes triplet spin multiplicity and the asterisk denotes an excited state.
In a third embodiment of the present invention, we focus on a way to use an intersystem crossing agent to increase efficiency by acting as a filter and a converter. In one aspect of the filter/converter embodiment, the intersystem crossing agent acts to convert singlet excitons to triplet excitons, thereby keeping singlets from reaching the emissive region and thus enhancing optical purity (the “filter” aspect: singlets are removed and thus no singlets emit) and increasing efficiency (the “conversion” aspect: singlets are converting to triplets, which do emit).
These embodiments are discussed in more detail in the examples below. However the embodiments may operate by different mechanisms. Without limiting the scope of the invention, we discuss the different mechanisms.
II.B.1.c. Dexter and Förster Mechanisms
To understand the different embodiments of this invention it is useful to discuss the underlying mechanistic theory of energy transfer. There are two mechanisms commonly discussed for the transfer of energy to an acceptor molecule. In the first mechanism of Dexter transport (D. L. Dexter, “A theory of sensitized luminescence in solids,” J. Chem. Phys., 1953, 21, 836-850), the exciton may hop directly from one molecule to the next. This is a short-range process dependent on the overlap of molecular orbitals of neighboring molecules. It also preserves the symmetry of the donor and acceptor pair (E. Wigner and E. W. Witmer, Uber die Struktur der zweiatomigen Molekelspektren nach der Quantenmechanik, Zeitschrift fur Physik, 1928, 51, 859-886; M. Klessinger and J. Michl, Excited states and photochemistry of organic molecules (VCH Publishers, New York, 1995). Thus, the energy transfer of Eq. (1) is not possible via Dexter mechanism. In the second mechanism of Förster transfer (T. Förster, Zwischenmolekulare Energiewanderung and Fluoreszenz, Annalen der Physik, 1948, 2, 55-75; T. Förster, Fluoreszenz organischer Verbindugen (Vandenhoek and Ruprecht, Gottinghen, 1951), the energy transfer of Eq. (1) is possible. In Förster transfer, similar to a transmitter and an antenna, dipoles on the donor and acceptor molecules couple and energy may be transferred. Dipoles are generated from allowed transitions in both donor and acceptor molecules. This typically restricts the Förster mechanism to transfers between singlet states.
However, in one embodiment of the present invention, we consider the case where the transition on the donor (3D*→1D) is allowed, i.e. the donor is a phosphorescent molecule. As discussed earlier, the probability of this transition is low because of symmetry differences between the excited triplet and ground state singlet.
Nevertheless, as long as the phosphor can emit light due to some perturbation of the state such as due to spin-orbit coupling introduced by a heavy metal atom, it may participate as the donor in Förster transfer. The efficiency of the process is determined by the luminescent efficiency of the phosphor (F Wilkinson, in Advances in Photochemistry (eds. W. A. Noyes G. Hammond, and J. N. Pitts. pp. 241-268, John Wiley & Sons. New York, 1964), i.e. if a radiative transition is more probable than a non-radiative decay, then energy transfer will be efficient. Such triplet-singlet transfers were predicted by Förster (T. Förster,“Transfer mechanisms of electronic excitation,” Discussions of the Faraday Society, 1959, 27, 7-17) and confirmed by Ermolaev and Sveshnikova (V. L. Ermolaev and E. B. Sveshnikova, “Inductive-resonance transfer of energy from aromatic molecules in the triplet state,” Doklady Akademii Nauk SSSR, 1963, 149, 1295-1298), who detected the energy transfer using a range of phosphorescent donors and fluorescent acceptors in rigid media at 77K or 90K. Large transfer distances are observed; for example, with triphenylamine as the donor and chrysoidine as the acceptor, the interaction range is 52 Å.
The remaining condition for Förster transfer is that the absorption spectrum should overlap the emission spectrum of the donor assuming the energy levels between the excited and ground state molecular pair are in resonance. In Example 1 of this application, we use the green phosphor fac tris(2-phenylpyridine) iridium (Ir(ppy)3; M. A. Baldo, et al., Appl. Phys. Lett., 1999, 75, 4-6) and the red fluorescent dye [2 methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl) ethenyl]-4H-pyran-ylidene] propane-dinitrile] (“DCM2”; C. W. Tang, S. A. VanSlyke, and C. H. Chen, “Electroluminescence of doped organic films,” J. Appl. Phys., 1989, 65, 3610-3616). DCM2 absorbs in the green, and, depending on the local polarization field (V. Bulovic, et al., “Bright, saturated, red-to-yellow organic light-emitting devices based on polarization-induced spectral shifts,” Chem. Phys. Lett., 1998, 287, 455-460), it emits at wavelengths between λ=570 nm and λ=650 nm.
It is possible to implement Förster energy transfer from a triplet state by doping a fluorescent guest into a phosphorescent host material. Unfortunately, such systems are affected by competitive energy transfer mechanisms that degrade the overall efficiency. In particular, the close proximity of the host and guest increase the likelihood of Dexter transfer between the host to the guest triplets. Once excitons reach the guest triplet state, they are effectively lost since these fluorescent dyes typically exhibit extremely inefficient phosphorescence.
Another approach is to dope both the phosphorescent donor and the fluorescent acceptor into a host material. The energy can then cascade from the host, through the phosphor sensitizing molecule and into the fluorescent dye following the equations (collectively Eq. 2):
3D*+1X→1D+3X*
3X*+1A→1X+1A*
1A*→1A+hν  (2a)
1D*+1X→1D+1X*
1X*→3X*
3X*+1A→1X+1A*
1A*→1A+hν  (2b)
wherein X represents the sensitizer molecule and hν is the photon energy.
The multiple state energy transfer required in the phosphorescent-sensitized system is schematically described in FIG. 1. Dexter transfers are indicated by dotted arrows, and Förster transfers by solid arrows. Transfers resulting in a loss in efficiency are marked with a cross. In addition to the energy transfer paths shown in the figure, direct electron-hole recombination is possible on the phosphorescent and fluorescent dopants as well as the host. Triplet exciton formation after charge recombination on the fluorescent dye is another potential loss mechanism.
To maximize the transfer of host triplets to fluorescent dye singlets, it is desirable to maximize Dexter transfer into the triplet state of the phosphor while also minimizing transfer into the triplet state of the fluorescent dye. Since the Dexter mechanism transfers energy between neighboring molecules, reducing the concentration of the fluorescent dye decreases the probability of triplet-triplet transfer to the dye. On the other hand, long range Förster transfer to the singlet state is unaffected. In contrast, transfer into the triplet state of the phosphor is necessary to harness host triplets, and may be improved by increasing the concentration of the phosphor. To demonstrate the multiple state transfer, we used 4,4′-N,N′-dicarbazole-biphenyl (“CBP”) as the host (D. F. O'Brien. M. A. Baldo, M. E. Thompson, and S. R. Forrest, “Improved energy transfer in electrophosphorescent devices.” Appl. Phys. Lett., 1999, 74, 442-444), Ir(ppy)3 as the phosphorescent sensitizer and DCM2 as the fluorescent dye. The doping concentration was 10% for Ir(ppy)3, and 1% for DCM2.
The details, given in Example 1 below, showed the improvement in efficiency of fluorescent yield brought about by the use of the phosphorescent sensitizer. In the following sections, we give additional background.
II.B.2. Interrelation of Device Structure and Emission
Devices whose structure is based upon the use of layers of organic optoelectronic materials generally rely on a common mechanism leading to optical emission. Typically, this mechanism is based upon the radiative recombination of a trapped charge. Specifically, OLEDs are comprised of at least two thin organic layers separating the anode and cathode of the device. The material of one of these layers is specifically chosen based on the material's ability to transport holes, a “hole transporting layer” (HTL), and the material of the other layer is specifically selected according to its ability to transport electrons, an “electron transporting layer” (ETL). With such a construction, the device can be viewed as a diode with a forward bias when the potential applied to the anode is higher than the potential applied to the cathode. Under these bias conditions, the anode injects holes (positive charge carriers) into the hole transporting layer, while the cathode injects electrons into the electron transporting layer. The portion of the luminescent medium adjacent to the anode thus forms a hole injecting and transporting zone while the portion of the luminescent medium adjacent to the cathode forms an electron injecting and transporting zone. The injected holes and electrons each migrate toward the oppositely charged electrode. When an electron and hole localize on the same molecule, a Frenkel exciton is formed. Recombination of this short-lived state may be visualized as an electron dropping from its conduction potential to a valence band, with relaxation occurring, under certain conditions, preferentially via a photoemissive mechanism. Under this view of the mechanism of operation of typical thin-layer organic devices, the electroluminescent layer comprises a luminescence zone receiving mobile charge carriers (electrons and holes) from each electrode.
As noted above, light emission from OLEDs is typically via fluorescence or phosphorescence. There are issues with the use of phosphorescence. It has been noted that phosphorescent efficiency can decrease rapidly at high current densities. It may be that long phosphorescent lifetimes cause saturation of emissive sites, and triplet-triplet annihilation may also produce efficiency losses. Another difference between fluorescence and phosphorescence is that energy transfer of triplets from a conductive host to a luminescent guest molecule is typically slower than that of singlets; the long range dipole-dipole coupling (Förster transfer) which dominates energy transfer of singlets is (theoretically) forbidden for triplets by the principle of spin symmetry conservation. Thus, for triplets, energy transfer typically occurs by diffusion of excitons to neighboring molecules (Dexter transfer); significant overlap of donor and acceptor excitonic wavefunctions is critical to energy transfer. Another issue is that triplet diffusion lengths are typically long (e.g., >1400 Å) compared with typical singlet diffusion lengths of about 200 Å. Thus, if phosphorescent devices are to achieve their potential, device structures need to be optimized for triplet properties. In this invention, we exploit the property of long triplet diffusion lengths to improve external quantum efficiency.
Successful utilization of phosphorescence holds enormous promise for organic electroluminescent devices. For example, an advantage of phosphorescence is that all excitons (formed by the recombination of holes and electrons in an EL), which are (in part) triplet-based in phosphorescent devices, may participate in energy transfer and luminescence in certain electroluminescent materials. In contrast, only a small percentage of excitons in fluorescent devices, which are singlet-based, result in fluorescent luminescence.
An alternative is to use phosphorescence processes to improve the efficiency of fluorescence processes. Fluorescence is in principle 75% less efficient due the three times higher number of symmetric excited states. In one embodiment of the present invention, we overcome the problem by using a phosphorescent sensitizer molecule to excite a fluorescent material in a red-emitting OLED. The mechanism for energetic coupling between molecular species is a long-range, non-radiative energy transfer from the phosphor to the fluorescent dye. Using this technique, the internal efficiency of fluorescence can be as high as 100%, a result previously only possible with phosphorescence. As shown in Example 1, we employ it to nearly quadruple the efficiency of a fluorescent OLED.
II.C. Background of Materials
II.C.1. Basic Heterostructures
Because one typically has at least one electron transporting layer and at least one hole transporting layer, one has layers of different materials, forming a heterostructure. The materials that produce the electroluminescent emission may be the same materials that function either as the electron transporting layer or as the hole transporting layer. Such devices in which the electron transporting layer or the hole transporting layer also functions as the emissive layer are referred to as having a single heterostructure. Alternatively, the electroluminescent material may be present in a separate emissive layer between the hole transporting layer and the electron transporting layer in what is referred to as a double heterostructure. The separate emissive layer may contain the emissive molecule doped into a host or the emissive layer may consist essentially of the emissive molecule.
That is, in addition to emissive materials that are present as the predominant component in the charge carrier layer, that is, either in the hole transporting layer or in the electron transporting layer, and that function both as the charge carrier material as well as the emissive material, the emissive material may be present in relatively low concentrations as a dopant in the charge carrier layer. Whenever a dopant is present, the predominant material in the charge carrier layer may be referred to as a host compound or as a receiving compound. Materials that are present as host and dopant are selected so as to have a high level of energy transfer from the host to the dopant material. In addition, these materials need to be capable of producing acceptable electrical properties for the OLED. Furthermore, such host and dopant materials are preferably capable of being incorporated into the OLED using materials that can be readily incorporated into the OLED by using convenient fabrication techniques, in particular, by using vacuum-deposition techniques.
II.C.2. Exciton Blocking Layer
The exciton blocking layer used in the devices of the present invention (and previously disclosed in U.S. appl. Ser. No. 09/154,044) substantially blocks the diffusion of excitons, thus substantially keeping the excitons within the emission layer to enhance device efficiency. The material of blocking layer of the present invention is characterized by an energy difference (“band gap”) between its lowest unoccupied molecular orbital (LUMO) and its highest occupied molecular orbital (HOMO) In accordance with the present invention, this band gap substantially prevents the diffusion of excitons through the blocking layer, yet has only a minimal effect on the turn-on voltage of a completed electroluminescent device. The band gap is thus preferably greater than the energy level of excitons produced in an emission layer, such that such excitons are not able to exist in the blocking layer. Specifically, the band gap of the blocking layer is at least as great as the difference in energy between the triplet state and the ground state of the host.
For a situation with a blocking layer between a hole-conducting host and the electron transporting layer (as is the case in Example 1, below), one seeks the following characteristics, which are listed in order of relative importance.
  • 1. The difference in energy between the LUMO and HOMO of the blocking layer is greater than the difference in energy between the triplet and ground state singlet of the host material.
  • 2. Triplets in the host material are not quenched by the blocking layer.
  • 3. The ionization potential (IP) of the blocking layer is greater than the ionization potential of the host. (Meaning that holes are held in the host.)
  • 4. The energy level of the LUMO of the blocking layer and the energy level of the LUMO of the host are sufficiently close in energy such that there is less than 50% change in the overall conductivity of the device.
  • 5. The blocking layer is as thin as possible subject to having a thickness of the layer that is sufficient to effectively block the transport of excitons from the emissive layer into the adjacent layer.
That is, to block excitons and holes, the ionization potential of the blocking layer should be greater than that of the HTL, while the electron affinity of the blocking layer should be approximately equal to that of the ETL to allow for facile transport of electrons.
[For a situation in which the emissive (“emitting”) molecule is used without a hole transporting host, the above rules for selection of the blocking layer are modified by replacement of the word “host” by “emitting molecule.”]
For the complementary situation with a blocking layer between a electron-conducting host and the hole-transporting layer one seeks characteristics (listed in order of importance):
  • 1. The difference in energy between the LUMO and HOMO of the blocking layer is greater than the difference in energy between the triplet and ground state singlet of the host material.
  • 2. Triplets in the host material are not quenched by the blocking layer.
  • 3. The energy of the LUMO of the blocking layer is greater than the energy of the LUMO of the (electron-transporting) host. (Meaning that electrons are held in the host.)
  • 4. The ionization potential of the blocking layer and the ionization potential of the host are such that holes are readily injected from the blocker into the host and there is less than a 50% change in the overall conductivity of the device.
  • 5. The blocking layer is as thin as possible subject to having a thickness of the layer that is sufficient to effectively block the transport of excitons from the emissive layer into the adjacent layer.
[For a situation in which the emissive (“emitting”) molecule is used without an electron transporting host the above rules for selection of the blocking layer are modified by replacement of the word “host” by “emitting molecule.”]
II.D. Color
As to colors, it is desirable for OLEDs to be fabricated using materials that provide electroluminescent emission in a relatively narrow band centered near selected spectral regions, which correspond to one of the three primary colors, red, green and blue so that they may be used as a colored layer in an OLED or SOLED. It is also desirable that such compounds be capable of being readily deposited as a thin layer using vacuum deposition techniques so that they may be readily incorporated into an OLED that is prepared entirely from vacuum-deposited organic materials.
U.S. Ser. No. 08/774,333, filed Dec. 23, 1996, is directed to OLEDs containing emitting compounds that produce a saturated red emission.
III. SUMMARY OF THE INVENTION
At the most general level, the present invention is directed to organic light emitting devices comprising an emissive layer wherein the emissive layer comprises an emissive molecule, with a host material (wherein the emissive molecule present as a dopant in said host material) which molecule is adapted to luminesce when a voltage is applied across a heterostructure, wherein the emissive molecule is selected from the group of phosphorescent or fluorescent organic molecules and wherein the device comprises a molecule which can function as an intersystem crossing agent (“ISC molecule”) which improves the efficiency of the phosphorescence or fluorescence relative to the situation where the ISC molecule is absent. It is preferred that the emissive molecule and the intersystem crossing molecule be different and it is preferred that there be substantial spectral overlap between the emissive molecule and the intersystem crossing molecule.
In a first embodiment wherein fluorescent efficiency is enhanced, a fluorescent emitter is combined with a phosphorescent sensitizer, which operates as an intersystem crossing agent. The phosphorescent sensitizer may be selected from materials wherein the radiative recombination rate is much greater than the non-radiative rate of recombination. The phosphorescent sensitizer may be selected from the group of cyclometallated organometallic compounds. The metal thereof may be selected from metals of the third row of the periodic table (especially W, Pt, Au, Ir, Os) and any other metals or metal compounds that have strong spin orbit coupling. The phosphorescent sensitizer may be further selected from the group of phosphorescent organometallic iridium or osmium complexes and may be still further selected from the group of phosphorescent cyclometallated iridium or osmium complexes. A specific example of the sensitizer molecule is fac tris(2-phenylpyridine) iridium, denoted (Ir(ppy)3) of formula
Figure US06894307-20050517-C00001

[In this, and later figures herein, we depict the dative bond from nitrogen to metal (here, Ir) as a straight line.]
A specific example of the fluorescent emitter is DCM2, of formula
Figure US06894307-20050517-C00002
In a second embodiment of the present invention, wherein phosphorescent efficiency is enhanced, a phosphorescent emitter is combined with an intersystem crossing agent such that the following can occur:
D*+1X→1D+1X*
1X*→3X*
3X*+1A→1X+3A*
3A*→1A+hν
wherein D represents the donor (host), X represents the intersystem crossing agent, and A represents the acceptor (emissive molecule). Superscript 1 denotes singlet spin multiplicity; superscript 3 denotes triplet spin multiplicity and the asterisk denotes an excited state.
In a third embodiment of the present invention, a thin layer of an ISC agent is placed in the device; it may be between the HTL and ETL. The ISC agent is selected such that the optical absorption spectrum of the ISC agent overlaps strongly with the emission line of the material found at the site of recombination.
The general arrangement of the heterostructure of the devices is such that the layers are ordered hole transporting layer, emissive layer, and electron transporting layer. For a hole conducting emissive layer, one may have an exciton blocking layer between the emissive layer and the electron transporting layer. For an electron conducting emissive layer, one may have an exciton blocking layer between the emissive layer and the hole transporting layer. The emissive layer may be equal to the hole transporting layer (in which case the exciton blocking layer is near or at the anode) or to the electron transporting layer (in which case the exciton blocking layer is near or at the cathode).
The emissive layer may be formed with a host material in which the emissive molecule resides as a guest. The host material may be a hole-transporting matrix selected from the group of substituted tri-aryl amines. An example of a host material is 4,4′-N,N′-dicarbazole-biphenyl (CBP), which has the formula
Figure US06894307-20050517-C00003

The emissive layer may also contain a polarization molecule, present as a dopant in said host material and having a dipole moment, that affects the wavelength of light emitted when said emissive dopant molecule luminesces.
A layer formed of an electron transporting material is used to transport electrons into the emissive layer comprising the emissive molecule and the optional host material. The electron transport material may be an electron-transporting matrix selected from the group of metal quinoxolates, oxidazoles and triazoles. An example of an electron transport material is tris-(8-hydroxyquinoline) aluminum (Alq3).
A layer formed of a hole transporting material is used to transport holes into the emissive layer comprising the emissive molecule and the optional host material. An example of a hole transporting material is 4.4′-bis[N-(1-naphthyl)-N-phenyl-amino] biphenyl [“α-NPD”].
The use of an exciton blocking layer (“barrier layer”) to confine excitons within the luminescent layer (“luminescent zone”) is greatly preferred. For a hole-transporting host, the blocking layer may be placed between the luminescent layer and the electron transport layer. An example of a material for such a barrier layer is 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (also called bathocuproine or BCP), which has the formula
Figure US06894307-20050517-C00004
IV. BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1. Proposed energy transfer mechanisms in the multi-step system. Ideally, all excitons are transferred to the singlet state of the fluorescent dye, as triplets in the dye non-radiatively recombine. Förster transfers are represented by solid lines and Dexter transfers by dotted lines. Electron-hole recombination creates singlet and triplet excitons in the host material. These excitons are then transferred to the phosphorescent sensitizer. There is also a lower probability of direct transfer to the fluorescent dye by Förster transfer into the singlet state, or Dexter transfer into the triplet state. This latter mechanism is a source of loss and this is signified in the figure by a cross. Singlet excitons in the phosphor are then subject to intersystem crossing (ISC) and transfer to the triplet state. From this state, the triplets may either dipole-dipole couple with the singlet state of the fluorescent dye or in another loss mechanism, they may Dexter transfer to the triplet state. Note also that electron-hole recombination is also possible on the phosphor and fluorescent dye. Direct formation of triplets on the fluorescent dye is an additional loss. Inset. The structure of electroluminescent devices fabricated in this work. The multiple doped layers are an approximation to a mixed layer of CBP: 10% Ir(ppy)3: 1% DCM2. Two variants were also made. Second device: The Ir(ppy)3 was exchanged with Alq3 to examine the case where the intermediate step is fluorescent and not phosphorescent. Third device: Separately, a device containing a luminescent layer of CBP: 1% DCM2 was made to examine direct transfers between CBP and DCM2.
FIG. 2. The external quantum efficiencies of DCM2 emission in the three devices. The sensitizing action of Ir(ppy)3 clearly improves the efficiency. Note also the presence of Alq3 in the all-fluorescent devices makes little or no difference.
FIG. 3. In the spectra of the three devices, characteristic peaks are observed for CBP (λ˜400 nm), TPD (λ˜420 nm), Alq3 (λ˜490 nm) Ir(ppy)3 (λ˜400 nm) and DCM2 (λ˜590 nm). Approximately 80% of the photons in the Ir(ppy)3 device are emitted by DCM2. All spectra were recorded at a current density of ˜1 mA/cm2.
FIG. 4. The transient response of the DCM2 and Ir(ppy)3 components in the CBP: 10% Ir(ppy)3: 1% DCM2 device. The transient lifetime of DCM2 is ˜1 ns, thus in the case of energy transfer from Ir(ppy)3, the response of DCM2 should be governed by the transient lifetime of Ir(ppy)3. After the initial 100 ns-wide electrical excitation pulse, this is clearly the case, demonstrating that energy is transferred from the triplet state in Ir(ppy)3 to the singlet state in DCM2. However, during the excitation pulse, singlet transfer to DCM2 is observed, resulting in the ripples in the transient response. These ripples are due to fluctuations in the current density and the discharge of traps at the falling edge of the pulse. Note that the trends in the DCM2 and Ir(ppy)3 transient response eventually diverge slightly. This is due to a small amount of charge trapped on DCM2 molecules recombining and causing luminescence.
FIG. 5. Schematic of device containing a layer of ISC agent between ETL and HTL.
FIG. 6. IV characteristics for the device described in Example 5/FIG. 5.
V. DETAILED DESCRIPTION OF THE INVENTION
The present invention is directed to organic light emitting devices (OLEDs) comprised of emissive layers that contain an organic compound functioning as an emitter and a separate intersystem crossing (“ISC”) molecule which operates to enhance the efficiency of the emission. Embodiments are described which enhance emission efficiency for fluorescent emitters and for phosphorescent emitters.
It is preferred that there be substantial spectral overlap between the ISC molecule and the emissive molecule. One way of measuring spectral overlap is by integrating absorption and emission spectra over the range of energies (wavenumbers) over which both spectra have non-zero values. This approach is related to that taken in Equation 2(a) of A. Shoustikov, Y. You, and M. E. Thompson, “Electroluminescence Color Tuning by Dye Doping in Organic Light Emitting Diodes,” IEEE Journal of Special Topics in Quantum Electronics, 1998, 4, 3-14. One approach is to normalize the absorption and emission spectra to integrated intensities of one. One integrates the product of the normalized spectra over the range of energies where both spectra have non-zero values. This range may be taken to be 180 nm to 1.5 microns in wavelength. If the values is at least 0.01, and more preferably at least 0.05, one has substantial spectral overlap.
It is also preferred that there be substantial spectral overlap between the emission spectrum of the host material and the absorption spectrum of the ISC agent One integrates the product of the normalized spectra over the range of energies where both spectra have non-zero values. This range may be taken to be 180 nm to 1.5 microns in wavelength. If the value is at least 0.01, and more preferably at least 0.05, one has substantial spectral overlap.
The present invention will now be described in detail for specific preferred embodiments of the invention, it being understood that these embodiments are intended only as illustrative examples and the invention is not to be limited thereto.
V.A. Use of ISC Agents to Enhance Fluorescent Emission
V.A.1. Overview of First Embodiment
An embodiment of the present invention is generally directed to phosphorescent sensitizers for fluorescent emissive molecules, which luminesce when a voltage is applied across a heterostructure of an organic light-emitting device and which sensitizers are selected from the group of phosphorescent organometallic complexes, and to structures, and correlative molecules of the structures, that optimize the emission of the light-emitting device. The term “organometallic” is as generally understood by one of ordinary skill, as given, for example, in “Inorganic Chemistry” (2nd edition) by Gary L. Miessler and Donald A. Tarr, Prentice-Hall (1998). The invention is further directed to sensitizers within the emissive layer of an organic light-emitting device which molecules are comprised of phosphorescent cyclometallated iridium complexes. Discussions of the appearance of color, including descriptions of CIE charts, may be found in Color Chemistry, VCH Publishers, 1991 and H. J. A. Dartnall, J. K. Bowmaker. and J. D. Mollon, Proc. Roy. Soc. B (London), 1983, 220, 115-130.
V.A.2. EXAMPLES OF FIRST EMBODIMENTS
The structure of the organic devices of Examples 1, 2, and 3 is shown in the inset of FIG. 1.
Example 1
Organic layers were deposited by a high vacuum (10−6 Torr) thermal evaporation onto a clean glass substrate pre-coated with a 1400 Å-thick layer of transparent and conductive indium tin oxide. A 600 Å-thick layer of N,N′-diphenyl-NN-bis(3-methylphenyl)-[1,1′-biphenyl]-4,4′diamine [“TPD”] is used to transport holes to the luminescent layer. The luminescent layer consisted of an alternating series of 10 Å-thick layers of CBP doped to 10% (by mass) of Ir(ppy)3, and 10 Å thick layers of CBP doped to 1% (by mass) of DCM2. In total, 10 doped layers were grown, with a total thickness of 100 Å. Excitons were confined within the luminescent region by a 200 Å-thick layer of the exciton-blocking material 2,9-dimethyl-4,7-diphenyl -1.10-phenanthroline (also called bathcuproine, or BCP). A 300 Å-thick layer of the electron transport material tris-(8-hydroxyquinoline) aluminum (“Alq3”) is used to transport electrons to the luminescent region and to reduce absorption at the cathode. A shadow mask with 1 mm-diameter openings was used to define the cathodes consisting of a 100 Å-thick layer of 25:1 Mg:Ag, with a 500 Å-thick cap. The compound Ir(ppy)3[sensitizer/ISC agent in Example 1] has the following formulaic representation:
Figure US06894307-20050517-C00005
Comparative Example 2
As one control, a device was created as in Example 1, except that Ir(ppy)3 was replaced by Alq3, which has similar emission and absorption spectra, but no observable phosphorescence at room temperature.
Comparative Example 3
As a second control, a device was created as in Example 1, except that the intermediate energy transfer step was omitted to examine direct energy transfer from CBP to DCM2.
Results of Examples 1,2, and 3
The external quantum efficiency (photons per electron) as a function of injection current of the DCM2 portion of the emission spectrum for each example is given in FIG. 2. The DCM2 emission efficiency of the device containing the phosphorescent sensitizer is significantly higher than its fluorescent analog. Indeed, the peak efficiency of(3.3±0.1) %, significantly higher than the best result of ˜2% observed for DCM2 in previous studies (C. H. Chen, C. W. Tang, J. Shi, and K. P. Klubeck, “Improved red dopants for organic luminescent devices,” Macromolecular Symposia, 1997, 125, 49-58)). This demonstrates that host triplets are transferred to the fluorescent singlet state in Example 1. As a more quantitative comparison of the increase in emission due to the sensitizer, we note the difference in the quantum efficiency of DCM2 emission, where the maximum efficiency is 0.9±0.1% in the example without the phosphorescent sensitizer and 3.3% in the example with phosphorescent sensitizer [Refer to FIG. 2 and the addition of Alq3 to the CBP:DCM2 device in Comparative Example 2.] The ratio of efficiency of sensitized to unsensitized devices is 3.7±0.4, which is close to the value of four (4) expected between emission of (singlet+triplet) to (only singlet) [that is, (1+3)/(1+0)] for devices in which the probability of both singlet and triplet participation is equal.
The emission spectra of the OLEDs of the three examples are given in FIG. 3. All devices show energy transfer to the fluorescent dye. By taking the area under the various spectral peaks, we find that approximately 80% of photons are emitted by DCM2 in the device containing the Ir(ppy)3 sensitizer. The remainder contribute to CBP luminescence at λ˜400 nm, TPD luminescence at λ˜420 nm, and Ir(ppy)3 luminescence at λ˜500 nm. In the device doped with 10% Alq3, an emission peak is observed at λ˜490 nm. This is consistent with observations of Alq3 emission in a non-polar host (CBP). (V. Bulovic. R. Deshpande, M. E. Thompson, and S. R Forrest, “Tuning the color emission of thin film molecular organic light emitting devices by the solid state solvation effect,” Chemical Physics Letters (1999).
Conclusive evidence of the energy transfer process in Eq. 2 is shown in FIG. 4, which illustrate the transient behavior of the DCM2 and Ir(ppy)3 components of the emission spectra. These data were obtained by applying a ˜100 ns electrical pulse to the electroluminscent device The resulting emission was measured with a streak camera. If a fraction of the DCM2 emission originates via transfer from Ir(ppy)3 triplets (Eq. 2), then the proposed energy transfer must yield delayed DCM2 fluorescence. Furthermore, since the radiative lifetime of DCM2 is much shorter than that of Ir(ppy)3, the transient decay of DCM2 should match that of Ir(ppy)3. After an initial peak, most probably due to singlet-singlet transfer (Eq. 2), the DCM2 decay does indeed follow the Ir(ppy)3 decay. The transient lifetime of Ir(ppy)3 in this system is ˜100 ns, compared to a lifetime of ˜500 ns in the absence of DCM2, confirming an energy transfer of ˜80%. The decrease in the triplet lifetime as a result of energy transfer to the fluorescent acceptor is advantageous. Not only does it increase the transient response of the system but also it has been shown that the probability of triplet-triplet annihilation varies inversely with the square of the triplet lifetime. (M. A. Baldo, M. E. Thompson, and S. R. Forrest, “An analytic model of triplet-triplet annihilation in electrophosphorescent devices,” (1999).) Thus, it is expected that this multi-stage energy transfer will reduce the quenching of triplet states, thereby further enhancing the potential for higher efficiency sensitized fluorescence.
The three examples demonstrate a general technique for improving the efficiency of fluorescence in guest-host organic systems. Further improvement may be expected by mixing the host, phosphorescent sensitizer, and fluorescent dye rather than doping in thin layers as in this work, although the thin layer approach inhibits direct Dexter transfer of triplets from the host to the fluorophore where they would be lost. To reduce losses further in the multi-state energy transfer, an ideal system may incorporate low concentrations of a sterically hindered dye. For example, adding spacer groups to the DCM2 molecule should decrease the probability of Dexter transfer to the dye while minimally affecting its participation in Förster transfer or its luminescence efficiency. Since Dexter transfer can be understood as the simultaneous transfer of an electron and a hole, steric hindrance may also reduce the likelihood of charge trapping on the fluorescent dye. Similar efforts have already reduced non-radiative excimer formation in a DCM2 variant [Chen, Tang, Shi and Klubeck, “Improved red dopants for organic EL Devices, Macromolecular Symposia. 1997, 125, 49-58]. Also, optimization of the device structure will reduce Ir(ppy)3 emission to lower levels.
V.B. Use of ISC Agents to Enhance Phosphorescent Emission
V.B.1. Overview of Second Embodiment
The second embodiment is directed to the situation wherein the emissive molecule is phosphorescent and the use of intersystem crossing molecules enhances the efficiency of the phosphorescent emission.
V.B.2. EXAMPLE OF SECOND EMBODIMENT Prophetic Example 4
An OLED is fabricated with a traditional diamine hole transporter and an electron transporting layer (ETL) composed of three different materials. The ETL is roughly 80% a traditional electron transporting material (such as Zrq4), 15% an intersystem crossing agent (such as benzil; other ISC agents may be found in the reference of Gilbert and Baggott) and 5% a phosphorescent emitter (such as PtOEP, platinum octaethyl porphyrin). The ISC agent is chosen so that its absorption spectrum overlaps strongly with the ETL's fluorescence spectrum. Hole electron recombination occurs at or near the HTL/ETL interface generating a mixture of singlet and triplet excitons. The singlet excitons on the ETL will efficiently transfer their energy to the ISC agent, which will efficiently intersystem cross to its triplet state, via a n→π* state or some other suitable process. The triplet energy of the ISC agent will then transfer to the dopant and emission will occur at the phosphorescent dopant. Triplet excitons formed on the ETL will either transfer directly to the dopant or energy transfer to the ISC agent, which will transfer that energy to the dopant as described. The ISC agent in this application is designed to completely quench singlet excitons giving a good yield of triplet excitons for transfer to the phosphorescent dopant.
The chemical formula of Zrq4 is
Figure US06894307-20050517-C00006

V.C. Use of Intersystem Crossing Agent as Filter and Converter
V.C.1. Overview of Third Embodiment
In this third embodiment of the present invention, a thin layer of an ISC agent is placed between the HTL and ETL. The ISC agent is selected such that the optical absorption spectrum of the ISC agent overlaps strongly with the emission line of the material found at the site of recombination.
In the control experiments discussed below, we utilized 2,7 diphenyl fluorenone (“ISC-F”) as the ISC agent. An ISC agent suitable for the filter/converter embodiment can be selected from the group consisting of acridines, acridones, brominated polycyclic aromatic compounds, anthraquinones, alpha-beta-diketones, phenazines, benzoquinones, biacetyls, fullerenes, thiophenes, pyrazines, quinoxalines, and thianthrenes.
V.C.2. EXAMPLES OF THIRD EMBODIMENT Example 5
In FIGS. 5 and 6, we present control experiments for a device without a phosphorescent dopant emitter. An example of the third embodiment can have a phosphorescent emitter in the ETL layer.
The structure of the device for this example is given schematically in FIG. 5. It is made of a heterostructure with α-NPD/ISC-F/Alq3. (The Alq3 layer is not doped). The IV characteristic of the device is given in FIG. 6. The device area here is 3.14 mm2 The key point is that there is no light at low to medium bias. This result shows that the ISC filter/converter certainly quenches singlets. [At very high biases (>17 Volts) weak green emission can be observed. The spectrum of this output shows that it is from Alq3. To explain the emission, either there are electrons leaking through to Alq3 at high bias or the ISC-F is transferring energy back to the singlet in Alq3.]
In the device corresponding to the third embodiment of the present invention, the Alq3 region is doped with a phosphorescent emitter. We would know that triplet excitons have been efficiently injected into the Alq3 layer because of phosphorescent emission arising from the doped emitter.
In the embodiment of the invention contemplated, the 2,7-diphenyl fluorenone (“ISC-F”) transports electrons to the α-NPD/ISC-F interface. Hole/electron recombination at or near this interface leads to both singlet and triplet excitons. Both of these excitons will be readily transferred to the ISC-F layer. Any singlet that transfers to the ISC-F layer (or is formed in it) will rapidly intersystem cross to a triplet. Thus, all of the excitons present will be efficiently converted to triplets within the device.
Specifically, the triplet excitons will diffuse through the ISC-F layer and transfer to the Alq3 layer. The transfer to Alq3 should be facile. Although the triplet energy of Alq3 is not exactly known, it is believed to be between 550 and 600 nm. This is exactly in the correct region to efficiently trap triplet excitons from ISC-F. Using the ISC agent in this way we prevent singlet excitons from ever reaching the emissive region of the device. By doping the emissive region with a phosphorescent dye, we an efficiently extract the energy luminescently. The ISC agent here is acting as a filter which only allows triplet excitons to be injected into the Alq3 layer. The requirements for such an ISC filter/converter are that it have both singlet and triplet energies below that of the material that is at or near the site of recombination (α-NPD in the example) and a triplet energy higher than the emissive region (which must not be the site of recombination. Alq3 in the example). The material must have a high ISC efficiency.
V.D. Other Discussion
V.D.1. Spectral Overlap
In the embodiments of the present invention, there should be spectral overlap between the emissive molecule and the intersystem crossing molecule. The nature of the overlap may depend upon the use of the device, which uses include a larger display, a vehicle, a computer, a television, a printer, a large area wall, theater or stadium screen, a billboard and a sign. For display applications of the device of the present invention, there should be spectral overlap in the visible spectrum. For other applications, such as the use of this device in printing, the overlap of the emission with the human photopic response may not be required.
V.D.2. Other Examples of Sensitizer/ISC Agent for First Embodiment
The embodiment of the present invention for enhancing fluorescent emission is not limited to the sensitizer molecule of the examples. One contemplates the use of metal complexes wherein there is sufficient spin orbit coupling to make the radiative relaxation an allowed process. Of ligands, one of ordinary skill may modify the organic component of the Ir(ppy)3 (directly below) to obtain desirable properties.
Figure US06894307-20050517-C00007

One may have alkyl substituents or alteration of the atoms of the aromatic structure.
Figure US06894307-20050517-C00008

These molecules, related to Ir(ppy)3, can be formed from commercially available ligands. The R groups can be alkyl or aryl and are preferably in the 3, 4, 7 and/or 8 positions on the ligand (for steric reasons).
Other possible sensitizers are illustrated below.
Figure US06894307-20050517-C00009

This molecule is expected to have a blue-shifted emission compared to Ir(ppy)3. R and R′ can independently be alkyl or aryl.
Organometallic compounds of osmium may be used in this invention.
Examples are the following.
Figure US06894307-20050517-C00010

These osmium complexes will be octahedral with 6d electrons (isoelectric with the Ir analogs) and may have good intersystem crossing efficiency. R and R′ are independently selected from the group consisting of alkyl and aryl. They are believed to be unreported in the literature.
Figure US06894307-20050517-C00011

Herein, X can be selected from the group consisting of N or P, R and R′ are independently selected from the group alkyl and aryl.
V.D.3. Other Molecular Depictions
A molecule for the hole-transporting layer of the invention is depicted below.
Figure US06894307-20050517-C00012

The invention will work with other hole-transporting molecules known by one of ordinary skill to work in hole transporting layers of OLEDs.
A molecule used as the host in the emissive layer of the invention is depicted below.
Figure US06894307-20050517-C00013

The invention will work with other molecules known by one of ordinary skill to work as hosts of emissive layers of OLEDs. For example, the host material could be a hole-transporting matrix and could be selected from the group consisting of substituted tri-aryl amines and polyvinylcarbazoles.
The molecule used as the exciton blocking layer of Example 1 is depicted below. The invention will work with other molecules used for the exciton blocking layer, provided they meet the requirements given herein.
Figure US06894307-20050517-C00014
V.D.4. Uses of Device
The OLED of the present invention may be used in substantially any type of device which is comprised of an OLED, for example, in OLEDs that are incorporated into a larger display, a vehicle, a computer, a television, a printer, a large area wall, theater or stadium screen, a billboard or a sign.
The present invention as disclosed herein may be used in conjunction with co-pending applications: “High Reliability, High Efficiency, Integratable Organic Light Emitting Devices and Methods of Producing Same”, Ser. No. 08/774,119 (filed Dec. 23, 1996); “Novel Materials for Multicolor Light Emitting Diodes”, Ser. No. 08/850,264 (filed May 2, 1997); “Electron Transporting and Light Emitting Layers Based on Organic Free Radicals”. Ser. No. 08/774,120 (filed Dec. 23, 1996); “Multicolor Display Devices”, Ser. No. 08/772,333 (filed Dec. 23. 1996); “Red-Emitting Organic Light Emitting Devices (OLED's)”, Ser. No. 08/774,087 (filed Dec. 23. 1996); “Driving Circuit For Stacked Organic Light Emitting Devices”. Ser. No. 08/792,050 (filed Feb. 3, 1997); “High Efficiency Organic Light Emitting Device Structures”. Ser. No. 08/772,332 (filed Dec. 23, 1996); “Vacuum Deposited, Non-Polymeric Flexible Organic Light Emitting Devices”, Ser. No. 08/789,319 (filed Jan. 23, 1997); “Displays Having Mesa Pixel Configuration”, Ser. No. 08/794,595 (filed Feb. 3, 1997); “Stacked Organic Light Emitting Devices”, Ser. No. 08/792,046 (filed Feb. 3, 1997); “High Contrast Transparent Organic Light Emitting Devices”, Ser. No. 08/792,046 (filed Feb. 3, 1997); “High Contrast Transparent Organic Light Emitting Device Display”. Ser. No. 08/821,380 (filed Mar. 20, 1997); “Organic Light Emitting Devices Containing A Metal Complex of 5-Hydroxy-Quinoxaline as A Host Material”, Ser. No. 08/838,099 (filed Apr. 15, 1997); “Light Emitting Devices Having High Brightness”, Ser. No. 08/844,353, (filed Apr. 18, 1997); “Organic Semiconductor Laser”, Ser. No. 08/859,468” (filed May 19, 1997); “Saturated Full Color Stacked Organic Light Emitting Devices”, Ser. No. 08/858,994 (filed on May 20, 1997); “Plasma Treatment of Conductive Layers”, PCT/US97/10252, (filed Jun. 12, 1997); “Novel Materials for Multicolor Light Emitting Diodes”. Ser. No. 08/814,976, (filed Mar. 11, 1997); “Novel Materials for Multicolor Light Emitting Diodes”, Ser. No. 08/771,815, (filed Dec. 23, 1996); “Patterning of Thin Films for the Fabrication of Organic Multi-color Displays”, PCT/US97/10289, (filed Jun. 12, 1997), and “Double Heterostructure Infrared and Vertical Cavity Surface Emitting Organic Lasers”, Attorney Docket No. 10020/35 (filed Jul. 18, 1997), each co-pending application being incorporated herein by reference in its entirety.

Claims (19)

1. An organic light emitting device, comprising:
an anode,
a cathode, and
an emissive layer between the anode and cathode, wherein the emissive layer comprises a host material, a luminescent emissive molecule present as a dopant in said host material, and an intersystem crossing agent which transfers energy to the luminescent emissive molecule, wherein the luminescent emissive molecule exhibits luminescence when a voltage is applied across the anode and the cathode.
2. The device of claim 1, wherein the intersystem crossing agent is selected from the group consisting of acridines, acridones, brominated polycyclic aromatic compounds, anthraquinones, alpha-beta-diketones, phenazines, benzoquinones, biacetyls, fullerenes, thiophenes, pyrazines, quinoxalines and thianthrenes.
3. The device of claim 2, wherein the intersystem crossing agent is an acridine.
4. The device of claim 2, wherein the intersystem crossing agent is an acridone.
5. The device of claim 2, wherein the intersystem crossing agent is a brominated polycyclic aromatic compound.
6. The device of claim 2, wherein the intersystem crossing agent is an anthraquinone.
7. The device of claim 2, wherein the intersystem crossing agent is an alpha-beta-diketone.
8. The device of claim 2, wherein the intersystem crossing agent is a phenazine.
9. The device of claim 2, wherein the intersystem crossing agent is a benzoquinone.
10. The device of claim 2, wherein the intersystem crossing agent is a biacetyl.
11. The device of claim 2, wherein the intersystem crossing agent is a fullerene.
12. The device of claim 2, wherein the intersystem crossing agent is a thiophene.
13. The device of claim 2, wherein the intersystem crossing agent is a pyrazine.
14. The device of claim 2, wherein the intersystem crossing agent is a quinoxaline.
15. The device of claim 2, wherein the intersystem crossing agent is a thianthrene.
16. An organic light emitting device comprising:
an anode;
a cathode; and
an emissive layer between the anode and the cathode, wherein the emissive layer comprises a fluorescent emissive molecule and an intersystem crossing agent which transfers energy to the fluorescent emissive molecule, wherein the fluorescent emissive molecule exhibits fluorescence when a voltage is applied across the anode and the cathode.
17. The device of claim 16, wherein the intersystem crossing agent comprises a phosphorescent organometallic compound.
18. The device of claim 17, wherein the phosphorescent organometallic compound comprises a metal selected from the group consisting of tungsten, platinum, gold, iridium and osmium.
19. The device of claim 17, wherein the phosphorescent organometallic compound comprises iridium.
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040075096A1 (en) * 2000-06-30 2004-04-22 Vladimir Grushin Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
US20040188673A1 (en) * 2000-06-30 2004-09-30 Vladimir Grushin Electroluminescent iridium compounds with fluorinated phenylpryidines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
US20040241493A1 (en) * 2002-12-19 2004-12-02 Semiconductor Energy Laboratory Co., Ltd. Organic metallic complex and electroluminescent element using the same
US20070159083A1 (en) * 2004-02-13 2007-07-12 Idemitsu Kosan Co., Ltd. Organic electroluminescent device
US20090174308A1 (en) * 2002-12-26 2009-07-09 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and a light emitting device using the same
US20100052527A1 (en) * 2008-09-01 2010-03-04 Semiconductor Energy Laboratory Co., Ltd. Light Emitting Element, Light Emitting Device, and Electronic Device
WO2012148521A2 (en) 2011-04-25 2012-11-01 General Electric Company Materials for optoelectronic devices
US11049908B2 (en) 2013-08-26 2021-06-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device
US11991927B2 (en) 2020-01-28 2024-05-21 Samsung Electronics Co., Ltd. Organic light-emitting device

Families Citing this family (339)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310360B1 (en) * 1999-07-21 2001-10-30 The Trustees Of Princeton University Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices
JP3924648B2 (en) * 1999-11-02 2007-06-06 ソニー株式会社 Organic electroluminescence device
JP4197814B2 (en) * 1999-11-12 2008-12-17 シャープ株式会社 LED driving method, LED device and display device
KR100387166B1 (en) * 1999-12-15 2003-06-12 닛뽄덴끼 가부시끼가이샤 Organic Electroluminescence Device
US6821645B2 (en) * 1999-12-27 2004-11-23 Fuji Photo Film Co., Ltd. Light-emitting material comprising orthometalated iridium complex, light-emitting device, high efficiency red light-emitting device, and novel iridium complex
KR100721656B1 (en) * 2005-11-01 2007-05-23 주식회사 엘지화학 Organic electronic devices
JP3904793B2 (en) * 2000-02-23 2007-04-11 パイオニア株式会社 Organic electroluminescence device
US6660410B2 (en) * 2000-03-27 2003-12-09 Idemitsu Kosan Co., Ltd. Organic electroluminescence element
JP2001284049A (en) * 2000-03-31 2001-10-12 Fuji Photo Film Co Ltd Color conversion membrane and light emitting device using it
JP4048521B2 (en) * 2000-05-02 2008-02-20 富士フイルム株式会社 Light emitting element
KR20010104215A (en) * 2000-05-12 2001-11-24 야마자끼 순페이 A method of manufacturing a light emitting device
TW536836B (en) * 2000-05-22 2003-06-11 Semiconductor Energy Lab Light emitting device and electrical appliance
JP5062797B2 (en) * 2000-05-22 2012-10-31 昭和電工株式会社 Organic electroluminescence device and light emitting material
US7339317B2 (en) 2000-06-05 2008-03-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having triplet and singlet compound in light-emitting layers
US20030143427A1 (en) * 2000-06-13 2003-07-31 Mikiko Matsuo Exciton forming substance, luminescent material using the substance, method for light emission and luminescent element, and device using the element
US6939624B2 (en) * 2000-08-11 2005-09-06 Universal Display Corporation Organometallic compounds and emission-shifting organic electrophosphorescence
US6911271B1 (en) * 2000-08-11 2005-06-28 The University Of Southern California Organometallic platinum complexes for phosphorescence based organic light emitting devices
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4344494B2 (en) * 2000-08-24 2009-10-14 富士フイルム株式会社 Light emitting device and novel polymer element
US6864628B2 (en) * 2000-08-28 2005-03-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound
US6893743B2 (en) * 2000-10-04 2005-05-17 Mitsubishi Chemical Corporation Organic electroluminescent device
EP1349435B8 (en) * 2000-11-30 2018-09-19 Canon Kabushiki Kaisha Luminescent element and display
SG2009086778A (en) * 2000-12-28 2016-11-29 Semiconductor Energy Lab Co Ltd Luminescent device
TW545080B (en) * 2000-12-28 2003-08-01 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US20020093006A1 (en) * 2001-01-16 2002-07-18 Vardeny Z. Valy Performance of organic light-emitting devices using spin-dependent processes
TW518909B (en) * 2001-01-17 2003-01-21 Semiconductor Energy Lab Luminescent device and method of manufacturing same
TW519770B (en) * 2001-01-18 2003-02-01 Semiconductor Energy Lab Light emitting device and manufacturing method thereof
SG118110A1 (en) * 2001-02-01 2006-01-27 Semiconductor Energy Lab Organic light emitting element and display device using the element
TW552650B (en) * 2001-02-01 2003-09-11 Semiconductor Energy Lab Deposition apparatus and deposition method
TW582121B (en) * 2001-02-08 2004-04-01 Semiconductor Energy Lab Light emitting device
US20030010288A1 (en) * 2001-02-08 2003-01-16 Shunpei Yamazaki Film formation apparatus and film formation method
TW550672B (en) * 2001-02-21 2003-09-01 Semiconductor Energy Lab Method and apparatus for film deposition
SG118118A1 (en) * 2001-02-22 2006-01-27 Semiconductor Energy Lab Organic light emitting device and display using the same
AU2002306596B2 (en) * 2001-02-27 2008-01-17 The Government Of The United States Of America As Represented By The Secretary Of The Department Of Health And Human Services Analogs of thalidomide as potential angiogenesis inhibitors
KR100898304B1 (en) * 2001-03-02 2009-05-19 더 트러스티즈 오브 프린스턴 유니버시티 Double doped-layer, phosphorescent organic light emitting devices
JP4438042B2 (en) * 2001-03-08 2010-03-24 キヤノン株式会社 Metal coordination compound, electroluminescent element and display device
JP5265840B2 (en) * 2001-03-14 2013-08-14 ザ、トラスティーズ オブ プリンストン ユニバーシティ Materials and devices for blue phosphorescence based on organic light emitting diodes
JP4307001B2 (en) 2001-03-14 2009-08-05 キヤノン株式会社 Metal coordination compound, electroluminescent element and display device
DE60239198D1 (en) * 2001-05-16 2011-03-31 Univ Princeton HIGHLY EFFICIENT MULTI-COLORED ELECTROPHOSPHORESCENT OLEDS
JP2002352960A (en) * 2001-05-29 2002-12-06 Hitachi Ltd Thin-film electroluminescent device
JP4006266B2 (en) * 2001-06-15 2007-11-14 キヤノン株式会社 Light emitting device and method for manufacturing light emitting device
WO2002104080A1 (en) 2001-06-15 2002-12-27 Canon Kabushiki Kaisha Organic electroluminescnece device
US6791258B2 (en) * 2001-06-21 2004-09-14 3M Innovative Properties Company Organic light emitting full color display panel
KR100841850B1 (en) 2001-08-09 2008-06-27 이데미쓰 고산 가부시키가이샤 Organic electroluminescence display and its driving method
KR100439648B1 (en) * 2001-08-29 2004-07-12 엘지.필립스 엘시디 주식회사 The organic electro-luminescence device
EP2259360B1 (en) * 2001-08-29 2021-11-03 The Trustees of Princeton University Organic light emitting devices having carrier transporting layers comprising metal complexes
EP2256838B1 (en) * 2001-08-29 2018-12-12 The Trustees of Princeton University Organic light emitting devices having charge carrier blocking layers comprising metalcomplexes
US6716656B2 (en) * 2001-09-04 2004-04-06 The Trustees Of Princeton University Self-aligned hybrid deposition
JP2003086376A (en) * 2001-09-06 2003-03-20 Nippon Hoso Kyokai <Nhk> Organic electroluminescence device and its manufacturing method
JP2003123968A (en) * 2001-10-15 2003-04-25 Univ Toyama Method for producing organic electroluminescent element
JP3823312B2 (en) * 2001-10-18 2006-09-20 日本電気株式会社 Organic thin film transistor
US6737177B2 (en) * 2001-11-08 2004-05-18 Xerox Corporation Red organic light emitting devices
US6863997B2 (en) 2001-12-28 2005-03-08 The Trustees Of Princeton University White light emitting OLEDs from combined monomer and aggregate emission
EP2192632B1 (en) * 2002-04-12 2014-09-03 Konica Corporation Organic Electroluminescence Element
US6653654B1 (en) 2002-05-01 2003-11-25 The University Of Hong Kong Electroluminescent materials
US6931132B2 (en) * 2002-05-10 2005-08-16 Harris Corporation Secure wireless local or metropolitan area network and related methods
DE10224021B4 (en) * 2002-05-24 2006-06-01 Novaled Gmbh Phosphorescent light emitting device with organic layers
JP3902981B2 (en) * 2002-06-04 2007-04-11 キヤノン株式会社 Organic light emitting device and display device
US20030230980A1 (en) * 2002-06-18 2003-12-18 Forrest Stephen R Very low voltage, high efficiency phosphorescent oled in a p-i-n structure
US7332739B2 (en) * 2002-06-20 2008-02-19 Samsung Sdi Co., Ltd. Organic electroluminescent device using mixture of phosphorescent material as light-emitting substance
KR100483986B1 (en) * 2002-06-20 2005-04-15 삼성에스디아이 주식회사 Organic polymer electroluminescent display device using phosphresecnce mixture as emiting material
US7265378B2 (en) * 2002-07-10 2007-09-04 E. I. Du Pont De Nemours And Company Electronic devices made with electron transport and/or anti-quenching layers
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
DE60224267T2 (en) * 2002-08-14 2009-01-08 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Method for determining the temperature of a system
TW556446B (en) * 2002-09-11 2003-10-01 Opto Tech Corp Organic light-emitting device and the manufacturing method thereof
US20040067324A1 (en) * 2002-09-13 2004-04-08 Lazarev Pavel I Organic photosensitive optoelectronic device
JPWO2004028217A1 (en) * 2002-09-20 2006-01-19 出光興産株式会社 Organic electroluminescence device
KR100650046B1 (en) * 2002-11-20 2006-11-27 엘지전자 주식회사 High efficient organic electroluminescent device
KR20050085622A (en) * 2002-12-13 2005-08-29 코닌클리케 필립스 일렉트로닉스 엔.브이. Electroluminescent device
WO2004058912A2 (en) * 2002-12-24 2004-07-15 Elam-T Limited Electroluminescent materials and devices
WO2004072205A2 (en) * 2003-02-12 2004-08-26 Koninklijke Philips Electronics N.V. Carbazole compounds and use of such compounds in organic electroluminescent devices
KR100501702B1 (en) * 2003-03-13 2005-07-18 삼성에스디아이 주식회사 Organic electroluminescent display device
TWI347350B (en) 2003-03-24 2011-08-21 Univ Southern California Phenyl and fluorenyl substituted phenyl-pyrazole complexes of ir
US20040199052A1 (en) 2003-04-01 2004-10-07 Scimed Life Systems, Inc. Endoscopic imaging system
US7862906B2 (en) 2003-04-09 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Electroluminescent element and light-emitting device
US7029765B2 (en) * 2003-04-22 2006-04-18 Universal Display Corporation Organic light emitting devices having reduced pixel shrinkage
US20060099448A1 (en) * 2003-04-28 2006-05-11 Zheng-Hong Lu Top light-emitting devices with fullerene layer
EP1623470A1 (en) * 2003-04-28 2006-02-08 Zheng-Hong Lu Light-emitting devices with fullerene layer
WO2004099339A1 (en) 2003-05-09 2004-11-18 Fuji Photo Film Co., Ltd. Organic electroluminescent device and platinum compound
US8379736B2 (en) 2003-05-30 2013-02-19 Intellectual Ventures Holding 73 Llc Ultra-wideband communication system and method
EP1629063B2 (en) 2003-06-02 2019-07-17 UDC Ireland Limited Organic electroluminescent devices and metal complex compounds
US20050014019A1 (en) * 2003-07-18 2005-01-20 Ying Wang Method of selecting a charge transport and/or anti-quenching material
US20050025993A1 (en) 2003-07-25 2005-02-03 Thompson Mark E. Materials and structures for enhancing the performance of organic light emitting devices
JP2005071986A (en) * 2003-08-04 2005-03-17 Fuji Photo Film Co Ltd Organic electroluminescent element
KR101246247B1 (en) * 2003-08-29 2013-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electroluminescent device and light-emitting device including the same
KR100543003B1 (en) 2003-09-15 2006-01-20 삼성에스디아이 주식회사 Full color organic electroluminescent device and method for manufacturing the same
US7935432B2 (en) * 2003-09-19 2011-05-03 Fujifilm Corporation Organic electroluminescent device
JP4864304B2 (en) * 2003-09-19 2012-02-01 富士フイルム株式会社 Organic electroluminescence device
US6881502B2 (en) * 2003-09-24 2005-04-19 Eastman Kodak Company Blue organic electroluminescent devices having a non-hole-blocking layer
ATE535132T1 (en) * 2003-09-24 2011-12-15 Fujifilm Corp ELECTROLUMINESCENCE COMPONENT
US20050104510A1 (en) * 2003-11-14 2005-05-19 General Electric Company Organic light emitting device capable of white light emissions and method for making the same
CN100364139C (en) * 2003-11-17 2008-01-23 中国科学院长春应用化学研究所 Method for preparing glow rare earth organic complex electroluminescent device
KR20050050487A (en) * 2003-11-25 2005-05-31 삼성에스디아이 주식회사 Full color organic electroluminescent device
KR100659530B1 (en) * 2003-11-26 2006-12-19 삼성에스디아이 주식회사 Full color orgraic electroluminescence display device
US20050123794A1 (en) * 2003-12-05 2005-06-09 Deaton Joseph C. Organic electroluminescent devices
US7070867B2 (en) * 2003-12-05 2006-07-04 The University Of Southern California OLEDs having n-type doping
US20050137459A1 (en) * 2003-12-17 2005-06-23 Scimed Life Systems, Inc. Medical device with OLED illumination light source
JP4408367B2 (en) * 2003-12-22 2010-02-03 富士フイルム株式会社 Organic electroluminescence device
JP4521182B2 (en) * 2003-12-26 2010-08-11 富士フイルム株式会社 Organic electroluminescence device
TWI230026B (en) * 2003-12-31 2005-03-21 Ritdisplay Corp Organic electroluminescent material and organic electroluminescent device by using the same
US20050158582A1 (en) * 2004-01-15 2005-07-21 Fuji Photo Film Co., Ltd. Organic electroluminescent element
JP2005228733A (en) 2004-01-16 2005-08-25 Fuji Photo Film Co Ltd Light-emitting element
US20050164031A1 (en) * 2004-01-26 2005-07-28 Thompson Mark E. Dual emitting dyads of heavy metal complexes as broad band emitters for organic LEDs
US7151339B2 (en) * 2004-01-30 2006-12-19 Universal Display Corporation OLED efficiency by utilization of different doping concentrations within the device emissive layer
KR100657892B1 (en) * 2004-02-11 2006-12-14 삼성에스디아이 주식회사 Organic electroluminescence device
US7045952B2 (en) * 2004-03-04 2006-05-16 Universal Display Corporation OLEDs with mixed host emissive layer
US7889774B2 (en) * 2004-03-05 2011-02-15 The Trustees Of Princeton University Organic polariton laser
US20050195873A1 (en) * 2004-03-05 2005-09-08 Forrest Stephen R. Organic polariton laser
JP2005267982A (en) * 2004-03-17 2005-09-29 Fuji Photo Film Co Ltd Organic electroluminescent element
WO2005091684A1 (en) * 2004-03-19 2005-09-29 Idemitsu Kosan Co., Ltd. Organic electroluminescent device
US20050214575A1 (en) * 2004-03-26 2005-09-29 Fuji Photo Film Co., Ltd. Organic electroluminescence element
JP2005310766A (en) * 2004-03-26 2005-11-04 Fuji Photo Film Co Ltd Organic electroluminescent element
US7361415B2 (en) * 2004-04-16 2008-04-22 The University Of Hong Kong System and method for producing light with organic light-emitting devices
JP4429067B2 (en) * 2004-04-21 2010-03-10 富士フイルム株式会社 Organic electroluminescence device
US20050244672A1 (en) * 2004-04-30 2005-11-03 Chi-Ming Che Organic light-emitting devices
US7601436B2 (en) 2004-05-18 2009-10-13 The University Of Southern California Carbene metal complexes as OLED materials
US7154114B2 (en) * 2004-05-18 2006-12-26 Universal Display Corporation Cyclometallated iridium carbene complexes for use as hosts
US7598388B2 (en) 2004-05-18 2009-10-06 The University Of Southern California Carbene containing metal complexes as OLEDs
US7582365B2 (en) * 2005-01-10 2009-09-01 Universal Display Corporation Reversibly reducible metal complexes as electron transporting materials for OLEDs
US7534505B2 (en) * 2004-05-18 2009-05-19 The University Of Southern California Organometallic compounds for use in electroluminescent devices
US7393599B2 (en) 2004-05-18 2008-07-01 The University Of Southern California Luminescent compounds with carbene ligands
US7279704B2 (en) 2004-05-18 2007-10-09 The University Of Southern California Complexes with tridentate ligands
US7445855B2 (en) * 2004-05-18 2008-11-04 The University Of Southern California Cationic metal-carbene complexes
US7491823B2 (en) * 2004-05-18 2009-02-17 The University Of Southern California Luminescent compounds with carbene ligands
US7655323B2 (en) * 2004-05-18 2010-02-02 The University Of Southern California OLEDs utilizing macrocyclic ligand systems
KR100581539B1 (en) * 2004-06-07 2006-05-22 (주)그라쎌 Red electroluminescent compounds and organic electroluminescent device using the same
US20060008670A1 (en) * 2004-07-06 2006-01-12 Chun Lin Organic light emitting materials and devices
US20060008671A1 (en) * 2004-07-07 2006-01-12 Raymond Kwong Electroluminescent efficiency
US7709100B2 (en) 2004-07-07 2010-05-04 Universal Display Corporation Electroluminescent efficiency
TWI479008B (en) 2004-07-07 2015-04-01 Universal Display Corp Stable and efficient electroluminescent materials
US7316756B2 (en) 2004-07-27 2008-01-08 Eastman Kodak Company Desiccant for top-emitting OLED
US7540978B2 (en) 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
WO2006015567A1 (en) 2004-08-13 2006-02-16 Novaled Ag Layer arrangement for a light-emitting component
US20060042685A1 (en) * 2004-08-25 2006-03-02 Ying Wang Electronic devices having a charge transport layer that has defined triplet energy level
JP4214482B2 (en) * 2004-08-26 2009-01-28 独立行政法人科学技術振興機構 Organic electroluminescence device
US9040170B2 (en) * 2004-09-20 2015-05-26 Global Oled Technology Llc Electroluminescent device with quinazoline complex emitter
JP4500735B2 (en) 2004-09-22 2010-07-14 富士フイルム株式会社 Organic electroluminescence device
JP4531509B2 (en) 2004-09-27 2010-08-25 富士フイルム株式会社 Light emitting element
JP4110160B2 (en) * 2004-09-29 2008-07-02 キヤノン株式会社 Organic electroluminescent device and display device
DE602004006275T2 (en) 2004-10-07 2007-12-20 Novaled Ag Method for doping a semiconductor material with cesium
US20060088728A1 (en) * 2004-10-22 2006-04-27 Raymond Kwong Arylcarbazoles as hosts in PHOLEDs
JP2006140182A (en) * 2004-11-10 2006-06-01 Fuji Photo Film Co Ltd Organic electroluminescent element
DE102004054893A1 (en) * 2004-11-12 2006-05-24 Micronas Gmbh Method and circuit arrangement for channel filtering analog or digitally modulated TV signals
KR100669757B1 (en) * 2004-11-12 2007-01-16 삼성에스디아이 주식회사 Organic electroluminescent device
US7776456B2 (en) * 2004-12-03 2010-08-17 Universal Display Corporation Organic light emitting devices with an emissive region having emissive and non-emissive layers and method of making
US20060125379A1 (en) * 2004-12-09 2006-06-15 Au Optronics Corporation Phosphorescent organic optoelectronic structure
JP4496948B2 (en) * 2004-12-13 2010-07-07 株式会社豊田自動織機 Organic EL device
US20090123720A1 (en) * 2005-03-01 2009-05-14 Zhikuan Chen Solution processed organometallic complexes and their use in electroluminescent devices
US7771845B2 (en) * 2005-03-14 2010-08-10 Fujifilm Corporation Organic electroluminescent device
EP1705727B1 (en) * 2005-03-15 2007-12-26 Novaled AG Light emitting element
TWI307250B (en) 2005-03-23 2009-03-01 Au Optronics Corp Organic electroluminescent device
US20060251921A1 (en) * 2005-05-06 2006-11-09 Stephen Forrest OLEDs utilizing direct injection to the triplet state
US7683536B2 (en) * 2005-03-31 2010-03-23 The Trustees Of Princeton University OLEDs utilizing direct injection to the triplet state
US20060222886A1 (en) * 2005-04-04 2006-10-05 Raymond Kwong Arylpyrene compounds
US9070884B2 (en) 2005-04-13 2015-06-30 Universal Display Corporation Hybrid OLED having phosphorescent and fluorescent emitters
DE502005002218D1 (en) 2005-04-13 2008-01-24 Novaled Ag Arrangement of a pin-type organic light emitting diode and method of manufacturing
US8057916B2 (en) * 2005-04-20 2011-11-15 Global Oled Technology, Llc. OLED device with improved performance
US7807275B2 (en) * 2005-04-21 2010-10-05 Universal Display Corporation Non-blocked phosphorescent OLEDs
US20060240281A1 (en) * 2005-04-21 2006-10-26 Eastman Kodak Company Contaminant-scavenging layer on OLED anodes
US9051344B2 (en) 2005-05-06 2015-06-09 Universal Display Corporation Stability OLED materials and devices
US7902374B2 (en) * 2005-05-06 2011-03-08 Universal Display Corporation Stability OLED materials and devices
US7851072B2 (en) * 2005-05-19 2010-12-14 Universal Display Corporation Stable and efficient electroluminescent materials
US7511418B2 (en) * 2005-05-20 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and manufacturing method of light emitting element
JP5046553B2 (en) * 2005-05-20 2012-10-10 株式会社半導体エネルギー研究所 Light emitting element
DE502005009415D1 (en) * 2005-05-27 2010-05-27 Novaled Ag Transparent organic light emitting diode
EP2277978B1 (en) 2005-05-31 2016-03-30 Universal Display Corporation Triphenylene hosts in phosphorescent light emitting diodes
US7474048B2 (en) * 2005-06-01 2009-01-06 The Trustees Of Princeton University Fluorescent filtered electrophosphorescence
EP2045843B1 (en) * 2005-06-01 2012-08-01 Novaled AG Light-emitting component with an electrode assembly
EP1739765A1 (en) * 2005-07-01 2007-01-03 Novaled AG Organic light-emitting diode and stack of organic light emitting diodes
JP4959961B2 (en) * 2005-07-29 2012-06-27 株式会社ジャパンディスプレイセントラル Manufacturing method of organic EL element
KR101308282B1 (en) 2005-09-05 2013-09-13 이데미쓰 고산 가부시키가이샤 Blue light emitting organic electroluminescence element
US8148891B2 (en) * 2005-10-04 2012-04-03 Universal Display Corporation Electron impeding layer for high efficiency phosphorescent OLEDs
US8956738B2 (en) * 2005-10-26 2015-02-17 Global Oled Technology Llc Organic element for low voltage electroluminescent devices
US20070103066A1 (en) * 2005-11-04 2007-05-10 D Andrade Brian W Stacked OLEDs with a reflective conductive layer
US8021763B2 (en) * 2005-11-23 2011-09-20 The Trustees Of Princeton University Phosphorescent OLED with interlayer
US20070122657A1 (en) * 2005-11-30 2007-05-31 Eastman Kodak Company Electroluminescent device containing a phenanthroline derivative
US9666826B2 (en) * 2005-11-30 2017-05-30 Global Oled Technology Llc Electroluminescent device including an anthracene derivative
DE502005004675D1 (en) * 2005-12-21 2008-08-21 Novaled Ag Organic component
US7977862B2 (en) * 2005-12-21 2011-07-12 Lg Display Co., Ltd. Organic light emitting devices
EP1804309B1 (en) * 2005-12-23 2008-07-23 Novaled AG Electronic device with a layer structure of organic layers
EP1804308B1 (en) * 2005-12-23 2012-04-04 Novaled AG An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other
US7645525B2 (en) * 2005-12-27 2010-01-12 Lg Display Co., Ltd. Organic light emitting devices
EP1808909A1 (en) * 2006-01-11 2007-07-18 Novaled AG Electroluminescent light-emitting device
KR100845694B1 (en) * 2006-01-18 2008-07-11 주식회사 엘지화학 Oled having stacked organic light-emitting units
WO2007092108A2 (en) 2006-02-07 2007-08-16 Boston Scientific Limited Medical device light source
US8142909B2 (en) * 2006-02-10 2012-03-27 Universal Display Corporation Blue phosphorescent imidazophenanthridine materials
EP2399922B1 (en) 2006-02-10 2019-06-26 Universal Display Corporation Metal complexes of cyclometallated imidazo(1,2-f) phenanthridine and diimidazo(1,2-A;1',2'-C)quinazoline ligands and isoelectronic and benzannulated analogs therof
US20070207345A1 (en) * 2006-03-01 2007-09-06 Eastman Kodak Company Electroluminescent device including gallium complexes
KR101617443B1 (en) 2006-04-13 2016-05-02 유니버시티 오브 써던 캘리포니아 Organic electronic devices using phthalimide compounds
WO2007123998A2 (en) * 2006-04-19 2007-11-01 Massachusetts Institute Of Technology Light emitting devices
EP1848049B1 (en) * 2006-04-19 2009-12-09 Novaled AG Light emitting device
US20070247061A1 (en) * 2006-04-20 2007-10-25 Vadim Adamovich Multiple dopant emissive layer OLEDs
US8330351B2 (en) * 2006-04-20 2012-12-11 Universal Display Corporation Multiple dopant emissive layer OLEDs
WO2007130047A1 (en) 2006-05-08 2007-11-15 Eastman Kodak Company Oled electron-injecting layer
US7579773B2 (en) * 2006-06-05 2009-08-25 The Trustees Of Princeton University Organic light-emitting device with a phosphor-sensitized fluorescent emission layer
KR101282400B1 (en) * 2006-08-24 2013-07-04 한국과학기술원 Organic light emitting diode display
US7724796B2 (en) * 2006-08-29 2010-05-25 The Trustees Of Princeton University Organic laser
US7598381B2 (en) * 2006-09-11 2009-10-06 The Trustees Of Princeton University Near-infrared emitting organic compounds and organic devices using the same
US7800295B2 (en) * 2006-09-15 2010-09-21 Universal Display Corporation Organic light emitting device having a microcavity
DE102006046196A1 (en) 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Illumination device particularly for background lighting of two displays, has two light output side, and organic layer stacks, which is arranged between two light output side
GB2442724B (en) * 2006-10-10 2009-10-21 Cdt Oxford Ltd Light emissive device
US8945722B2 (en) * 2006-10-27 2015-02-03 The University Of Southern California Materials and architectures for efficient harvesting of singlet and triplet excitons for white light emitting OLEDs
DE102006059509B4 (en) * 2006-12-14 2012-05-03 Novaled Ag Organic light-emitting element
DE102007019260B4 (en) * 2007-04-17 2020-01-16 Novaled Gmbh Non-volatile organic storage element
US7993763B2 (en) * 2007-05-10 2011-08-09 Universal Display Corporation Organometallic compounds having host and dopant functionalities
US20080284318A1 (en) * 2007-05-17 2008-11-20 Deaton Joseph C Hybrid fluorescent/phosphorescent oleds
US20080284317A1 (en) * 2007-05-17 2008-11-20 Liang-Sheng Liao Hybrid oled having improved efficiency
US20080309217A1 (en) * 2007-05-18 2008-12-18 Mulder Carlijn L Organic light emitting devices
JP5127300B2 (en) 2007-05-28 2013-01-23 キヤノン株式会社 Fluorene compound, organic light emitting device using the same, and display device
JP5053713B2 (en) 2007-05-30 2012-10-17 キヤノン株式会社 Phosphorescent material, organic electroluminescent element and image display device using the same
KR100858824B1 (en) * 2007-05-31 2008-09-17 삼성에스디아이 주식회사 An organic light emitting device and a method for preparing the same
US9023490B2 (en) 2007-06-15 2015-05-05 Versitech Limited Extended pi-conjugated platinum (II) complexes
JP5008470B2 (en) 2007-06-18 2012-08-22 キヤノン株式会社 Organic electroluminescence device
KR102513201B1 (en) 2007-08-08 2023-03-22 유니버셜 디스플레이 코포레이션 Single triphenylene chromophores in phosphorescent light emitting diodes
JP2009076865A (en) 2007-08-29 2009-04-09 Fujifilm Corp Organic electroluminescence device
KR101548382B1 (en) 2007-09-14 2015-08-28 유디씨 아일랜드 리미티드 Organic electroluminescence device
CN101848882B (en) * 2007-09-20 2015-04-29 巴斯夫欧洲公司 Electroluminescent device
JP5438941B2 (en) 2007-09-25 2014-03-12 ユー・ディー・シー アイルランド リミテッド Organic electroluminescence device
JP5213405B2 (en) * 2007-10-04 2013-06-19 出光興産株式会社 Organic electroluminescence device
US8383249B2 (en) * 2007-10-04 2013-02-26 Universal Display Corporation Complexes with tridentate ligands
US8067100B2 (en) * 2007-10-04 2011-11-29 Universal Display Corporation Complexes with tridentate ligands
US20090091242A1 (en) * 2007-10-05 2009-04-09 Liang-Sheng Liao Hole-injecting layer in oleds
CN101170852B (en) * 2007-11-14 2010-05-19 电子科技大学 An organic EL part with ultra-thin layer structure
JP5489446B2 (en) 2007-11-15 2014-05-14 富士フイルム株式会社 Thin film field effect transistor and display device using the same
US7982216B2 (en) 2007-11-15 2011-07-19 Fujifilm Corporation Thin film field effect transistor with amorphous oxide active layer and display using the same
JP5438955B2 (en) 2007-12-14 2014-03-12 ユー・ディー・シー アイルランド リミテッド Platinum complex compound and organic electroluminescence device using the same
US20090162612A1 (en) * 2007-12-19 2009-06-25 Hatwar Tukaram K Oled device having two electron-transport layers
WO2009108408A2 (en) * 2008-01-14 2009-09-03 Massachusetts Institute Of Technology Hybrid solar concentrator
JP5243972B2 (en) 2008-02-28 2013-07-24 ユー・ディー・シー アイルランド リミテッド Organic electroluminescence device
KR101557517B1 (en) * 2008-03-19 2015-10-06 더 리젠츠 오브 더 유니버시티 오브 미시간 Organic thin films for infrared detection
JP4555358B2 (en) 2008-03-24 2010-09-29 富士フイルム株式会社 Thin film field effect transistor and display device
JP4531836B2 (en) 2008-04-22 2010-08-25 富士フイルム株式会社 Organic electroluminescent device, novel platinum complex compound and novel compound that can be a ligand
JP4531842B2 (en) 2008-04-24 2010-08-25 富士フイルム株式会社 Organic electroluminescence device
KR100924145B1 (en) * 2008-06-10 2009-10-28 삼성모바일디스플레이주식회사 Organic light emitting diode and fabrication method of the same
US8324800B2 (en) * 2008-06-12 2012-12-04 Global Oled Technology Llc Phosphorescent OLED device with mixed hosts
DE102008036063B4 (en) * 2008-08-04 2017-08-31 Novaled Gmbh Organic field effect transistor
DE102008036062B4 (en) 2008-08-04 2015-11-12 Novaled Ag Organic field effect transistor
US8247088B2 (en) * 2008-08-28 2012-08-21 Global Oled Technology Llc Emitting complex for electroluminescent devices
JP5329342B2 (en) * 2008-09-01 2013-10-30 株式会社半導体エネルギー研究所 Light emitting element
EP2161272A1 (en) 2008-09-05 2010-03-10 Basf Se Phenanthrolines
WO2010036765A1 (en) 2008-09-25 2010-04-01 Universal Display Corporation Organoselenium materials and their uses in organic light emitting devices
JP2012507175A (en) 2008-10-28 2012-03-22 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン Stacked white OLED with red, green and blue subelements
JP2010153820A (en) 2008-11-21 2010-07-08 Fujifilm Corp Organic electroluminescent element
JP4775865B2 (en) * 2009-01-14 2011-09-21 東芝モバイルディスプレイ株式会社 Organic EL display device and manufacturing method thereof
US20100139749A1 (en) * 2009-01-22 2010-06-10 Covalent Solar, Inc. Solar concentrators and materials for use therein
JP2010182449A (en) 2009-02-03 2010-08-19 Fujifilm Corp Organic electroluminescent display device
JP2010186723A (en) 2009-02-13 2010-08-26 Fujifilm Corp Organic el device and method of manufacturing the same
JP2010232163A (en) 2009-03-03 2010-10-14 Fujifilm Corp Method of manufacturing light-emitting display device, light-emitting display device, and light-emitting display
JP2010205650A (en) 2009-03-05 2010-09-16 Fujifilm Corp Organic el display device
JP2011066388A (en) 2009-03-27 2011-03-31 Fujifilm Corp Coating solution for organic electroluminescent element
DE102009018647A1 (en) * 2009-04-23 2010-10-28 Osram Opto Semiconductors Gmbh Radiation-emitting device
US20100314994A1 (en) 2009-06-16 2010-12-16 Chi Ming Che Platinum (II) Isoqulinoline-Pyridine-Benzene Based Complexes, Methods for Making Same, and Organic Light-Emitting Diodes Including Such Complexes
WO2010145991A1 (en) 2009-06-18 2010-12-23 Basf Se Phenanthroazole compounds as hole transporting materials for electro luminescent devices
WO2011013626A1 (en) 2009-07-31 2011-02-03 富士フイルム株式会社 Vapor deposition material for organic device and method for manufacturing organic device
JP5779318B2 (en) 2009-08-31 2015-09-16 ユー・ディー・シー アイルランド リミテッド Organic electroluminescence device
JP2011060549A (en) 2009-09-09 2011-03-24 Fujifilm Corp Optical member for organic el device, and organic el device
JP5473506B2 (en) 2009-09-14 2014-04-16 ユー・ディー・シー アイルランド リミテッド Color filter and light emitting display element
JP5657243B2 (en) 2009-09-14 2015-01-21 ユー・ディー・シー アイルランド リミテッド Color filter and light emitting display element
JP2011100944A (en) 2009-11-09 2011-05-19 Fujifilm Corp Organic electroluminescent element
JP2011121876A (en) 2009-12-08 2011-06-23 Canon Inc New iridium complex and organic light-emitting device containing the same
EP2530758A4 (en) * 2010-01-29 2014-07-02 Sumitomo Chemical Co Luminescent composition and light-emitting element using said composition
JP5618753B2 (en) * 2010-04-26 2014-11-05 キヤノン株式会社 Organic light emitting device
JP2013201153A (en) * 2010-06-08 2013-10-03 Idemitsu Kosan Co Ltd Organic electroluminescent element
US8673458B2 (en) 2010-06-11 2014-03-18 Universal Display Corporation Delayed fluorescence OLED
DE102010025547B4 (en) * 2010-06-29 2023-05-11 Samsung Display Co., Ltd. Use of a composition in an emitter layer in an optoelectronic device for singlet harvesting with organic molecules, optoelectronic devices and method for their production
JP5968885B2 (en) * 2010-07-30 2016-08-10 メルク パテント ゲーエムベーハー Organic electroluminescence device
US20120049168A1 (en) 2010-08-31 2012-03-01 Universal Display Corporation Cross-Linked Charge Transport Layer Containing an Additive Compound
EP2621730B1 (en) 2010-09-29 2019-09-18 Basf Se Security element
US9079872B2 (en) 2010-10-07 2015-07-14 Basf Se Phenanthro[9, 10-B]furans for electronic applications
CN107266398A (en) 2010-10-07 2017-10-20 Udc 爱尔兰有限责任公司 Phenanthro- [9,10 b] furans for electronic application
GB2485001A (en) * 2010-10-19 2012-05-02 Cambridge Display Tech Ltd OLEDs
JP5677035B2 (en) 2010-11-04 2015-02-25 キヤノン株式会社 Xanthone compound and organic light emitting device having the same
WO2012074111A1 (en) 2010-12-02 2012-06-07 宇部興産株式会社 Binuclear metal complex, and organic electroluminescence element using same
US9105860B2 (en) 2011-06-30 2015-08-11 Samsung Display Co., Ltd. Organic light emitting diode
US9023420B2 (en) 2011-07-14 2015-05-05 Universal Display Corporation Composite organic/inorganic layer for organic light-emitting devices
JP2013093541A (en) 2011-10-06 2013-05-16 Udc Ireland Ltd Organic electroluminescent element and compound and material for organic electroluminescent element usable therefor, and luminescent device, display device and lighting device using the element
JP2013084732A (en) 2011-10-07 2013-05-09 Udc Ireland Ltd Organic field light-emitting element and light-emitting material for the same, and light-emitting device, display device and illuminating device
JP2013118349A (en) 2011-11-02 2013-06-13 Udc Ireland Ltd Organic electroluminescent element, material for organic electroluminescent element, and light emitting device, display device and illumination device which employ said organic electroluminescent element
JP5913938B2 (en) 2011-11-30 2016-05-11 富士フイルム株式会社 Light diffusing transfer material, method of forming light diffusing layer, and method of manufacturing organic electroluminescent device
DE102011089687A1 (en) 2011-12-22 2013-06-27 Hartmut Yersin Singlet Harvesting with special organic molecules without metal centers for opto-electronic devices
JP5981770B2 (en) 2012-01-23 2016-08-31 ユー・ディー・シー アイルランド リミテッド Organic electroluminescence device, charge transport material for organic electroluminescence device, and light emitting device, display device and illumination device using the device
JP6118034B2 (en) 2012-02-06 2017-04-19 ユー・ディー・シー アイルランド リミテッド ORGANIC ELECTROLUMINESCENT ELEMENT, COMPOUND USABLE FOR THE SAME, ORGANIC ELECTROLUMINESCENT ELEMENT MATERIAL, AND LIGHT EMITTING DEVICE, DISPLAY DEVICE AND LIGHTING DEVICE USING THE ELEMENT
US20130240850A1 (en) * 2012-03-13 2013-09-19 The Regents Of The University Of Michigan Ultra-high efficiency (125%) phosphorescent organic light emitting diodes using singlet fission
US9859517B2 (en) 2012-09-07 2018-01-02 Nitto Denko Corporation White organic light-emitting diode
US10957870B2 (en) * 2012-09-07 2021-03-23 Universal Display Corporation Organic light emitting device
KR101965910B1 (en) * 2012-10-30 2019-04-05 삼성디스플레이 주식회사 Organic light emitting device
US9653691B2 (en) * 2012-12-12 2017-05-16 Universal Display Corporation Phosphorescence-sensitizing fluorescence material system
KR20150122754A (en) * 2013-03-29 2015-11-02 코니카 미놀타 가부시키가이샤 Organic electroluminescent element, lighting device, display device, light-emitting thin film and composition for organic electroluminescent element, and light-emitting method
KR101293690B1 (en) 2013-06-14 2013-08-06 한국해양과학기술원 Optical sensor for measuring water quality using rgb sensor
KR102665000B1 (en) * 2013-08-14 2024-05-10 가부시키가이샤 큐럭스 Organic electroluminescent element
JP2016529730A (en) * 2013-08-29 2016-09-23 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン Organic electronic devices having multiple solution processing layers
US9385348B2 (en) 2013-08-29 2016-07-05 The Regents Of The University Of Michigan Organic electronic devices with multiple solution-processed layers
US9666822B2 (en) 2013-12-17 2017-05-30 The Regents Of The University Of Michigan Extended OLED operational lifetime through phosphorescent dopant profile management
KR102491669B1 (en) 2013-12-20 2023-01-26 유디씨 아일랜드 리미티드 Highly efficient oled devices with very short decay times
WO2015134017A1 (en) 2014-03-05 2015-09-11 Universal Display Corporation Phosphorescent oled devices
EP3473635B1 (en) 2014-05-08 2020-07-22 Universal Display Corporation Stabilized imidazophenanthridine materials
US11329244B2 (en) * 2014-08-22 2022-05-10 Arizona Board Of Regents On Behalf Of Arizona State University Organic light-emitting diodes with fluorescent and phosphorescent emitters
KR102353647B1 (en) 2014-08-29 2022-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting element, display device, electronic device, and lighting device
CN104393181B (en) * 2014-10-30 2017-02-01 中国科学院长春应用化学研究所 Red organic electroluminescent device and preparation method thereof
JP6403359B2 (en) * 2014-11-05 2018-10-10 学校法人沖縄科学技術大学院大学学園 Doped manipulated hole transport layer for perovskite based devices
FR3032970B1 (en) 2015-02-23 2017-03-31 Centre Nat Rech Scient MOLECULAR EMISSIVE MATERIALS PHOTOPOLYMERIZABLE
KR102584846B1 (en) 2015-05-05 2023-10-04 유니버셜 디스플레이 코포레이션 Organic electroluminescent materials and devices
KR102661925B1 (en) * 2015-06-03 2024-05-02 유디씨 아일랜드 리미티드 Highly efficient oled devices with very short decay times
US10818853B2 (en) 2015-06-04 2020-10-27 University Of Southern California Organic electroluminescent materials and devices
JP6808329B2 (en) * 2016-02-25 2021-01-06 株式会社ジャパンディスプレイ Materials for organic electroluminescence display devices and organic electroluminescence display devices
US10665803B2 (en) * 2016-04-22 2020-05-26 The Trusteees Of Princeton University Solid-state organic intermediate-band photovoltaic devices
JP6941115B2 (en) * 2016-11-25 2021-09-29 コニカミノルタ株式会社 Method for manufacturing luminescent film, organic electroluminescence element, organic material composition and organic electroluminescence element
KR102250191B1 (en) 2017-03-06 2021-05-10 삼성전자주식회사 Light emitting device
WO2018186101A1 (en) * 2017-04-07 2018-10-11 コニカミノルタ株式会社 Organic electroluminescence element and method for manufacturing organic electroluminescence element
DE112018004962T5 (en) * 2017-10-27 2020-07-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, display device, electronic device and lighting device
WO2019099506A1 (en) * 2017-11-14 2019-05-23 The Penn State Research Foundation Charged polaron-polaritons in an organic semiconductor microcavity
EP3492480B1 (en) 2017-11-29 2021-10-20 Universal Display Corporation Organic electroluminescent materials and devices
CN111937174B (en) 2018-01-17 2023-12-05 柯尼卡美能达株式会社 Light-emitting film, organic electroluminescent element, and method for producing same
US12029055B2 (en) 2018-01-30 2024-07-02 The University Of Southern California OLED with hybrid emissive layer
KR20200052208A (en) * 2018-11-05 2020-05-14 삼성디스플레이 주식회사 Organic light-emitting device
US11594691B2 (en) 2019-01-25 2023-02-28 Arizona Board Of Regents On Behalf Of Arizona State University Light outcoupling efficiency of phosphorescent OLEDs by mixing horizontally aligned fluorescent emitters
US11780829B2 (en) * 2019-01-30 2023-10-10 The University Of Southern California Organic electroluminescent materials and devices
US11812624B2 (en) 2019-01-30 2023-11-07 The University Of Southern California Organic electroluminescent materials and devices
US12082428B2 (en) * 2019-03-12 2024-09-03 Universal Display Corporation OLED with triplet emitter and excited state lifetime less than 200 ns
CN113646315A (en) 2019-04-11 2021-11-12 默克专利有限公司 Material for organic electroluminescent device
KR102700520B1 (en) 2019-06-13 2024-09-02 삼성디스플레이 주식회사 Organic light emitting device
US20210040129A1 (en) * 2019-08-08 2021-02-11 Universal Display Corporation Organic electroluminescent materials and devices
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Citations (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996019792A2 (en) 1994-12-13 1996-06-27 The Trustees Of Princeton University Multicolor organic light emitting devices
WO1997033296A1 (en) 1996-03-06 1997-09-12 The Trustees Of Princeton University Transparent contacts for organic devices
WO1997048139A1 (en) 1996-06-12 1997-12-18 The Trustees Of Princeton University Patterning of thin films for the fabrication of organic multi-color displays
WO1997048115A1 (en) 1996-06-12 1997-12-18 The Trustees Of Princeton University Plasma treatment of conductive layers
US5757139A (en) 1997-02-03 1998-05-26 The Trustees Of Princeton University Driving circuit for stacked organic light emitting devices
US5811834A (en) 1996-01-29 1998-09-22 Toyo Ink Manufacturing Co., Ltd. Light-emitting material for organo-electroluminescence device and organo-electroluminescence device for which the light-emitting material is adapted
US5811833A (en) 1996-12-23 1998-09-22 University Of So. Ca Electron transporting and light emitting layers based on organic free radicals
US5834893A (en) 1996-12-23 1998-11-10 The Trustees Of Princeton University High efficiency organic light emitting devices with light directing structures
US5844363A (en) 1997-01-23 1998-12-01 The Trustees Of Princeton Univ. Vacuum deposited, non-polymeric flexible organic light emitting devices
US5861219A (en) 1997-04-15 1999-01-19 The Trustees Of Princeton University Organic light emitting devices containing a metal complex of 5-hydroxy-quinoxaline as a host material
US5917280A (en) 1997-02-03 1999-06-29 The Trustees Of Princeton University Stacked organic light emitting devices
US5932895A (en) 1997-05-20 1999-08-03 The Trustees Of Princeton University Saturated full color stacked organic light emitting devices
US5986401A (en) 1997-03-20 1999-11-16 The Trustee Of Princeton University High contrast transparent organic light emitting device display
US5989738A (en) 1996-06-28 1999-11-23 U.S. Philips Corporation Organic electroluminescent component with charge transport layer
US6013982A (en) 1996-12-23 2000-01-11 The Trustees Of Princeton University Multicolor display devices
US6013429A (en) 1998-02-27 2000-01-11 Eastman Kodak Company Photographic element with new singlet oxygen quenchers
US6045930A (en) 1996-12-23 2000-04-04 The Trustees Of Princeton University Materials for multicolor light emitting diodes
US6046543A (en) 1996-12-23 2000-04-04 The Trustees Of Princeton University High reliability, high efficiency, integratable organic light emitting devices and methods of producing same
US6048630A (en) 1996-07-02 2000-04-11 The Trustees Of Princeton University Red-emitting organic light emitting devices (OLED's)
US6091195A (en) 1997-02-03 2000-07-18 The Trustees Of Princeton University Displays having mesa pixel configuration
US6091382A (en) 1995-12-30 2000-07-18 Casio Computer Co., Ltd. Display device for performing display operation in accordance with signal light and driving method therefor
US6097147A (en) 1998-09-14 2000-08-01 The Trustees Of Princeton University Structure for high efficiency electroluminescent device
US6111902A (en) 1997-05-09 2000-08-29 The Trustees Of Princeton University Organic semiconductor laser
US6125226A (en) 1997-04-18 2000-09-26 The Trustees Of Princeton University Light emitting devices having high brightness
US6160828A (en) 1997-07-18 2000-12-12 The Trustees Of Princeton University Organic vertical-cavity surface-emitting laser
US6310360B1 (en) * 1999-07-21 2001-10-30 The Trustees Of Princeton University Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0390551B1 (en) * 1989-03-31 1996-07-10 Kabushiki Kaisha Toshiba Organic electroluminescent device
DE4428450A1 (en) * 1994-08-11 1996-02-15 Philips Patentverwaltung Optical electroluminescent component used as LED's
JPH10231476A (en) * 1997-02-19 1998-09-02 Oki Electric Ind Co Ltd Organic el element
JPH11256418A (en) * 1998-03-12 1999-09-21 Free Ride:Kk Shock-absorbing liner of helmet and helmet

Patent Citations (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996019792A2 (en) 1994-12-13 1996-06-27 The Trustees Of Princeton University Multicolor organic light emitting devices
US6091382A (en) 1995-12-30 2000-07-18 Casio Computer Co., Ltd. Display device for performing display operation in accordance with signal light and driving method therefor
US5811834A (en) 1996-01-29 1998-09-22 Toyo Ink Manufacturing Co., Ltd. Light-emitting material for organo-electroluminescence device and organo-electroluminescence device for which the light-emitting material is adapted
WO1997033296A1 (en) 1996-03-06 1997-09-12 The Trustees Of Princeton University Transparent contacts for organic devices
WO1997048139A1 (en) 1996-06-12 1997-12-18 The Trustees Of Princeton University Patterning of thin films for the fabrication of organic multi-color displays
WO1997048115A1 (en) 1996-06-12 1997-12-18 The Trustees Of Princeton University Plasma treatment of conductive layers
US5989738A (en) 1996-06-28 1999-11-23 U.S. Philips Corporation Organic electroluminescent component with charge transport layer
US6048630A (en) 1996-07-02 2000-04-11 The Trustees Of Princeton University Red-emitting organic light emitting devices (OLED's)
US5811833A (en) 1996-12-23 1998-09-22 University Of So. Ca Electron transporting and light emitting layers based on organic free radicals
US6013982A (en) 1996-12-23 2000-01-11 The Trustees Of Princeton University Multicolor display devices
US5834893A (en) 1996-12-23 1998-11-10 The Trustees Of Princeton University High efficiency organic light emitting devices with light directing structures
US6046543A (en) 1996-12-23 2000-04-04 The Trustees Of Princeton University High reliability, high efficiency, integratable organic light emitting devices and methods of producing same
US6045930A (en) 1996-12-23 2000-04-04 The Trustees Of Princeton University Materials for multicolor light emitting diodes
US5844363A (en) 1997-01-23 1998-12-01 The Trustees Of Princeton Univ. Vacuum deposited, non-polymeric flexible organic light emitting devices
US6091195A (en) 1997-02-03 2000-07-18 The Trustees Of Princeton University Displays having mesa pixel configuration
US5757139A (en) 1997-02-03 1998-05-26 The Trustees Of Princeton University Driving circuit for stacked organic light emitting devices
US5917280A (en) 1997-02-03 1999-06-29 The Trustees Of Princeton University Stacked organic light emitting devices
US5986401A (en) 1997-03-20 1999-11-16 The Trustee Of Princeton University High contrast transparent organic light emitting device display
US5861219A (en) 1997-04-15 1999-01-19 The Trustees Of Princeton University Organic light emitting devices containing a metal complex of 5-hydroxy-quinoxaline as a host material
US6125226A (en) 1997-04-18 2000-09-26 The Trustees Of Princeton University Light emitting devices having high brightness
US6111902A (en) 1997-05-09 2000-08-29 The Trustees Of Princeton University Organic semiconductor laser
US5932895A (en) 1997-05-20 1999-08-03 The Trustees Of Princeton University Saturated full color stacked organic light emitting devices
US6160828A (en) 1997-07-18 2000-12-12 The Trustees Of Princeton University Organic vertical-cavity surface-emitting laser
US6013429A (en) 1998-02-27 2000-01-11 Eastman Kodak Company Photographic element with new singlet oxygen quenchers
US6097147A (en) 1998-09-14 2000-08-01 The Trustees Of Princeton University Structure for high efficiency electroluminescent device
US6310360B1 (en) * 1999-07-21 2001-10-30 The Trustees Of Princeton University Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices
US6515298B2 (en) * 1999-07-21 2003-02-04 The Trustees Of Princeton University Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices

Non-Patent Citations (16)

* Cited by examiner, † Cited by third party
Title
A. Shoustikov, et al., "Electroluminescence Color Tuning by Dye Doping in Organic Light Emitting Diodes," IEEE Journal of Special Topics in Quantum Electronics, 4, 3-14, (1998).
Baldo, et al., "Very high efficiency green organic light-emitting devices based on electrophosphorescence", 75 Applied Physics Letters, 4-6, (1999).
C. H. Chen, et al., "Improved red dopants for organic luminescent devices," Macromolecular Symposia, 125, 49-58, (1997).
C. W. Tang, et al., "Electroluminescence of doped organic films," 65 J. Appl. Phys., 3610-3616, (1989).
C.H. Chen, et al., "Recent developments in molecular organic electroluminescent materials", Macromolecular Symposia , 125, 1-48 (1997).
C.W. Tang, et al., "Organic Electroluminescent Diodes", 51 Appl. Phys. Lett., 913 (1987).
D.F. O'Brien, et al., "Improved energy transfer in electrophosphorescent devices", Applied Physics Letters, vol. 74, No. 3, 442-444, (Jan. 1999).
Gary L. Miessler, et al., Inorganic Chemistry, 2nd Edition, Prentice-Hall (1998).
H. Zollinger, Color Chemistry, VCH Publishers, (1991).
H.J.A. Dartnall, et al., 220 Proc. Roy. Soc. B (London), 115-130 (1983).
M.A. Baldo, et al., "Highly efficient phosphorescent emission from organic electroluminescent devices", Nature, vol. 395, 151-154, (Sep. 1998).
S. R. Forrest, "Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques," Chemical Reviews, 1997, 97, pp. 1793-1896.
S.R. Forrest, et al., "Organic Emmitters Promise a New Generation of Displays", Laser Focus World, (Feb. 1995).
V. Boulovic, et al., "Bright, saturated, red-to-yellow organic light-emitting devices based on polarization-induced spectral shifts," Chem. Phys. Lett., 287, 455-460 (1998).
V. Bulovic, et al., "Tuning the color emission of thin film molecular organic light emitting devices by the solid state solvation effect," Chemical Physics Letters, (1999).
Y. Kunugi, et al., "A Vapochromic LED", J. Am. Chem. Soc., vol. 120, No. 3, pp. 589-590, 1998.

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US20040075096A1 (en) * 2000-06-30 2004-04-22 Vladimir Grushin Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds
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US20040241493A1 (en) * 2002-12-19 2004-12-02 Semiconductor Energy Laboratory Co., Ltd. Organic metallic complex and electroluminescent element using the same
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US8274214B2 (en) 2008-09-01 2012-09-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
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US11991927B2 (en) 2020-01-28 2024-05-21 Samsung Electronics Co., Ltd. Organic light-emitting device

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