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US20170352789A1 - Wavelength converting member and method of producing the same - Google Patents

Wavelength converting member and method of producing the same Download PDF

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Publication number
US20170352789A1
US20170352789A1 US15/538,253 US201515538253A US2017352789A1 US 20170352789 A1 US20170352789 A1 US 20170352789A1 US 201515538253 A US201515538253 A US 201515538253A US 2017352789 A1 US2017352789 A1 US 2017352789A1
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Prior art keywords
layer
quantum dot
wavelength converting
sample
converting member
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US15/538,253
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English (en)
Inventor
Akiharu Miyanaga
Eiichi KANAUMI
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NS Materials Inc
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NS Materials Inc
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Publication of US20170352789A1 publication Critical patent/US20170352789A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present invention relates to a wavelength converting member used for a back light etc. and to a method of producing the same.
  • JP 2013-544018 A (PTL 1) below discloses an invention relating to quantum dot films and lighting devices using the same.
  • PTL 1 discloses in FIG. 6A , a lighting device 600 having a QD (quantum dot) phosphor material 604 and barrier layers 620 and 622 placed on both sides of the material.
  • the barrier layers are provided, thereby ensuring the photostability of QDs and protecting the QDs from elevated temperatures, moisture, and other harmful environmental conditions (see etc. of PTL 1).
  • PTL 1 does not refer in particular to the relationship between the structure of the barrier layers and change in the light emission intensity over time. In other words, PTL 1 does not limit the structure of the barrier layers in terms of change in the light emission intensity over time.
  • the present invention is made in consideration of the above, in particular with a view to providing a wavelength converting member which can reduce change in the light emission intensity over time as compared with conventional members and a method of producing the wavelength converting member.
  • a wavelength converting member according to the present invention includes a quantum dot layer having quantum dots; and at least one barrier layer formed on at least both sides of the quantum dot layer.
  • the moisture vapor transmission rate of the barrier layer is lower than 9 g/(m 2 ⁇ d).
  • the moisture vapor transmission rate is preferably 0.1 g/(m 2 ⁇ d) or less.
  • the barrier layer is preferably formed around the entire periphery of the quantum dot layer.
  • a wrap starting end and a wrap finishing end of the barrier layer are joined at edge on one side of the quantum dot layer.
  • barrier layers are placed on both the top and bottom of the quantum dot layer and are joined at edges on sides of the quantum dot layer.
  • the quantum dot layer is preferably formed from a molding or formed by inkjet printing.
  • the barrier layer is preferably formed to have at least an organic layer. This facilitates the handling of the barrier layer (improvement in the handling).
  • the barrier layer has a layered structure, in which the organic layer is formed as the innermost layer facing the quantum dot layer. This allows the quantum dot layer to be easily formed on the barrier layer, and the adhesion between the barrier layer and the quantum dot layer can be improved.
  • an inorganic layer is provided outside the innermost layer. This can effectively improve the barrier properties of the barrier layer.
  • the present invention a plurality of the organic layers are provided, and an inorganic layer is sandwiched between the organic layers.
  • the inorganic layer is preferably formed from a SiO 2 layer.
  • the organic layer is preferably formed in contact with the quantum dot layer.
  • the organic layer is preferably formed from a PET film.
  • the quantum dot layer preferably contains a thickening agent.
  • a thickening agent is added to adjust the viscosity. This allows the quantum dot layer to be formed with a certain uniform thickness, thereby achieving good fluorescence properties.
  • the quantum dot layer may contain a light-scattering agent.
  • a surface of the barrier layer may be matted.
  • the barrier layer made of a material having a moisture vapor transmission rate of less than 9 g/(m 2 ⁇ d) is formed on at least both sides of a quantum dot layer having quantum dots.
  • the barrier layer made of a material having a moisture vapor transmission rate of less than 9 g/(m 2 ⁇ d) is prepared, and the barrier layer is formed on at least both sides of the quantum dot layer.
  • the entire periphery of the quantum dot layer having quantum dots is covered by the barrier layer. This makes it possible to produce a wavelength converting member which allows change in the light emission intensity to be more effectively inhibited as compared with conventional techniques.
  • the method preferably includes the steps of: forming a plurality of the quantum dot layers at intervals on a lower barrier layer; forming an upper barrier layer over a surface of the lower barrier layer and surfaces of the plurality of the quantum dot layers; and isolating the quantum dot layers by cutting the lower barrier layer and the upper barrier layer between the quantum dot layers.
  • the quantum dot layer is preferably formed from a molding or formed by inkjet printing.
  • the barrier layer has an organic layer, and the organic layer is provided on the innermost side to face the quantum dot layer.
  • the adhesion between the barrier layer and the quantum dot layer can be improved, high wettability of a surface of the organic layer can be achieved, and the quantum dot layer can be formed more easily.
  • the barrier layer has a plurality of organic layers and an inorganic layer sandwiched between the organic layers, and the innermost layer of the barrier layer facing the quantum dot layer and the outermost layer thereof are constituted by the organic layers.
  • the organic layers on both sides of the barrier layer allows for good handling, making it easier to form the quantum dot layer. Further, the inclusion of inorganic layer allows the barrier properties of the barrier layer to be effectively improved.
  • the quantum dot layer preferably contains a thickening agent. This allows the viscosity of the quantum dot layer to be adjusted, which facilitates the formation of the quantum dot layer having a given thickness on the surface of the barrier layer.
  • wavelength converting member of the present invention change in the light emission intensity over time can effectively be inhibited as compared with conventional techniques.
  • FIGS. 1A to 1C are longitudinal sectional views each showing a wavelength converting member exemplifying a first embodiment of the present invention
  • FIG. 2 is a longitudinal sectional view of a wavelength converting member exemplifying a second embodiment of the present invention
  • FIG. 3 is a longitudinal sectional view of a wavelength converting member exemplifying a third embodiment of the present invention.
  • FIGS. 4A and 4B are longitudinal sectional views each showing a wavelength converting member exemplifying a fourth embodiment of the present invention.
  • FIG. 5 is a longitudinal sectional view of a wavelength converting member exemplifying a fifth embodiment of the present invention.
  • FIG. 6 is a longitudinal sectional view of a wavelength converting member exemplifying a sixth embodiment of the present invention.
  • FIG. 7 is a longitudinal sectional view of a wavelength converting member exemplifying a seventh embodiment of the present invention.
  • FIG. 8 is a longitudinal sectional view of a wavelength converting member exemplifying an eighth embodiment of the present invention.
  • FIG. 9 is a longitudinal sectional view of a wavelength converting member exemplifying a ninth embodiment of the present invention.
  • FIG. 10 is a longitudinal sectional view of a wavelength converting member exemplifying a tenth embodiment of the present invention.
  • FIG. 11 is a longitudinal sectional view of a wavelength converting member exemplifying an eleventh embodiment of the present invention.
  • FIG. 12 is a longitudinal sectional view of a wavelength converting member exemplifying a twelfth embodiment of the present invention.
  • FIG. 13 is a longitudinal sectional view of a wavelength converting member exemplifying a thirteenth embodiment of the present invention.
  • FIG. 14 is a perspective view of a wavelength converting member of the embodiments.
  • FIG. 15 is a longitudinal sectional view of a display device using a wavelength converting member of the embodiments.
  • FIG. 16 is a longitudinal sectional view of a display device using a wavelength converting member of the embodiments, different from FIG. 15 ;
  • FIG. 17 is a longitudinal sectional view of a light guide member using a wavelength converting member of the embodiments.
  • FIG. 18 is a conceptual diagram of an apparatus for producing a wavelength converting member of the embodiments.
  • FIG. 19 is a conceptual diagram for illustrating a method of producing a wavelength converting member of the eighth embodiment of the present invention.
  • FIG. 20 is a conceptual diagram for illustrating a method of producing a wavelength converting member of the ninth embodiment of the present invention.
  • FIGS. 21A and 21B are a conceptual diagram for illustrating a method of producing a wavelength converting member of the tenth embodiment of the present invention.
  • FIG. 22 is a schematic view of a light emission testing unit used in experiments.
  • FIG. 23 is a graph showing the relationship between the elapsed time and the blue light intensity (450 nm area) for each sample;
  • FIG. 24 is a graph showing the relationship the elapsed time and the green light intensity (green area) for each sample
  • FIG. 25 is a graph showing the relationship the elapsed time and the x-coordinate of the CIE color space chromaticity diagram for each sample;
  • FIG. 26 is a graph showing the relationship the elapsed time and the y-coordinate of the CIE color space chromaticity diagram for each sample;
  • FIG. 27 is a graph showing the relationship the elapsed time and the normalized illumination for each sample
  • FIG. 28 is a graph showing the relationship the elapsed time and the x-coordinate of the CIE color space chromaticity diagram for each sample;
  • FIG. 29 is a graph showing the relationship the elapsed time and the y-coordinate of the CIE color space chromaticity diagram for each sample;
  • FIG. 30 is a graph showing the relationship the elapsed time and the normalized illumination for each sample.
  • FIG. 31 is a graph showing the relationship the elapsed time and the blue light intensity (450 nm area) for Sample 9 to Sample 11;
  • FIG. 32 is a graph showing the relationship the elapsed time and the green light intensity (green area) for Sample 9 to Sample 11;
  • FIG. 33 is a graph showing the relationship the elapsed time and the red light intensity (red area) for Sample 9 to Sample 11;
  • FIG. 34 is a graph showing the relationship the elapsed time and the x-coordinate of the CIE color space chromaticity diagram for Sample 9 to Sample 11;
  • FIG. 35 is a graph showing the relationship the elapsed time and the y-coordinate of the CIE color space chromaticity diagram for Sample 9 to Sample 11;
  • FIG. 36 is a graph of the measurements of the relationship the elapsed time and the blue light intensity (450 nm area) for Sample 12 to Sample 14;
  • FIG. 37 is a graph showing the relationship the elapsed time and the green light intensity (green area) for Sample 12 to Sample 14;
  • FIG. 38 is a graph showing the relationship the elapsed time and the red light intensity (red area) for Sample 12 to Sample 14;
  • FIG. 39 is a graph showing the relationship the elapsed time and the x-coordinate of the CIE color space chromaticity diagram for Sample 12 to Sample 14;
  • FIG. 40 is a graph showing the relationship the elapsed time and the y-coordinate of the CIE color space chromaticity diagram for Sample 12 to Sample 14;
  • FIG. 41 shows the light emission spectrum for Sample 9
  • FIG. 42 shows the light emission spectrum for Sample 10.
  • FIG. 43 shows the light emission spectrum for Sample 11
  • FIG. 44 shows the light emission spectrum for Sample 12.
  • FIG. 45 shows the light emission spectrum for Sample 13
  • FIG. 46 shows the light emission spectrum for Sample 14.
  • FIGS. 1A to 1C are longitudinal sectional views of a wavelength converting member exemplifying a first embodiment of the present invention.
  • a wavelength converting member 1 includes a quantum dot layer 2 having quantum dots, barrier layers 3 and 4 formed on both sides of the quantum dot layer 2 .
  • the wavelength converting member 1 is for example a sheet member shaped like a thin plate. In general, a “sheet” is defined as a structure having a thickness that is small relative to the length and the width.
  • the wavelength converting member 1 may or may not be flexible, but is preferably flexible.
  • the wavelength converting member 1 is sometimes simply called a sheet, or may be called a film or a film sheet.
  • the wavelength converting member 1 may be formed with a uniform thickness, or may have a structure in which the thickness varies from point to point in the member, varies gradually in the length direction or the width direction, or varies in stages.
  • the length dimension L, the width dimension W, and the thickness dimension T of the wavelength converting member 1 are not limited, and may be varied depending on the product.
  • the wavelength converting member can be used for a back light of a large product such as a TV set, or can be used for a back light of a small portable device such as a smartphone. Accordingly, the size of the wavelength converting member is determined in accordance with the size of the product.
  • the quantum dot layer 2 includes numerous quantum dots, and may also include a fluorescent pigment, a fluorescent dye, or the like in addition to the quantum dots.
  • the quantum dot layer 2 is preferably formed from a resin composition in which quantum dots are dispersed.
  • resins that can be used include: polypropylene, polyethylene, polystyrene, AS resin, ABS resin, acrylic resin, methacrylate resin, polyvinyl chloride, polyacetal, polyamide, polycarbonate, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polysulfone, polyethersulfone, polyphenylene sulfide, polyamide-imide, polymethylpentene, liquid crystal polymers, epoxy resin, phenol resin, urea formaldehyde resin, melamine resin, diallyl phthalate resin, unsaturated polyester resin, polyimide, polyurethane, silicone resin, a styrene-based thermoplastic elastomer, and mixtures thereof.
  • urethane-acrylic resin urethane acrylate, a styrene-based thermoplastic elastomer, etc.
  • HYBRAR® available from KURARAY CO., LTD. can be given as an example of a styrene-based thermoplastic elastomer.
  • a quantum dot in this embodiment can have a semiconductor core having a diameter of two nanometers to several tens of nanometers.
  • a quantum dot can have, in addition to the core consisting of a semiconductor particle, a shell part covering the circumference of the core.
  • the diameter of the core consisting of a semiconductor particle may be 2 nm to 20 nm, preferably, 2 nm to 15 nm. This does not limit the material of the core.
  • the core can use a core material containing at least Zn and Cd; a core material containing Zn, Cd, Se, and S; ZnCuInS; CdS; ZnSe; ZnS; CdSe; InP; CdTe; or a composite thereof.
  • the quantum dots include, for example, quantum dots having a fluorescence wavelength of approximately 520 nm (green) and those having a fluorescence wavelength of approximately 660 nm (red). Accordingly, when blue light enters the light entrance plane 1 a as shown in FIGS. 1A to 1C , the quantum dots convert part of the blue light into green or red light. Thus, white light can be obtained from the light exit plane 1 b.
  • the quantum dot layer 2 is formed by coating the surface of a film like barrier layer with a resin composition in which quantum dots are dispersed, or by previously shaping the resin composition into a predetermined shape.
  • the barrier layers 3 and 4 are individually placed on both sides of the quantum dot layer 2 .
  • the barrier layers 3 and 4 can be joined to both surfaces of the quantum dot layer 2 with adhesive layers 7 provided therebetween.
  • barrier layers 3 and 4 protect both surfaces of the quantum dot layer 2 , leading to improved resistance to environment (durability).
  • Such a structure in which barrier layers are placed on both sides of a quantum dot layer has conventionally been studied (PTL 1).
  • the structure does not limit the structure of the barrier layers in terms of inhibiting change in the light emission intensity of the wavelength converting member over time.
  • the moisture vapor transmission rate of the barrier layers 3 and 4 is set to lower than 9 g/(m 2 ⁇ d).
  • the “moisture vapor transmission rate” can be measured based on JIS K7129 (:2008). Specifically, the moisture vapor transmission rate can be measured using, without limitation, a humidity sensor method, an infrared sensor method, or a gas chromatography method.
  • the moisture vapor transmission rate of the barrier layers 3 and 4 is preferably 5 g/(m 2 ⁇ d) or less, more preferably 3 g/(m 2 ⁇ d) or less, still more preferably 1 g/(m 2 ⁇ d) or less, yet more preferably 0.1 g/(m 2 ⁇ d) or less, and even more preferably 0.01 g/(m 2 ⁇ d) or less.
  • the moisture vapor transmission rate is most preferably 6 ⁇ 10 ⁇ 3 g/(m 2 ⁇ d) or less.
  • change in the light emission intensity over time can be effectively inhibited as compared with conventional techniques by controlling the moisture vapor transmission rate of the barrier layers 3 and 4 .
  • the moisture vapor transmission rate of the barrier layers 3 and 4 For example, as shown in the experimental results described below, when quantum dots having a green fluorescence wavelength were used, for a sample in which barrier layers having a moisture vapor transmission rate of 9 g/(m 2 ⁇ d) were used, the light emission intensity of the blue fluorescence wavelength (incident light) gradually increased over time while the light emission intensity of the green fluorescence wavelength decreased rapidly.
  • the temperature was set at 60° C., and the humidity was set at 90%.
  • the high moisture vapor transmission rate of the barrier layers 3 and 4 increases the amount of water vapor reaching the quantum dot layer 2 , so that the quantum dots contained in the quantum dot layer 2 are likely to deteriorate.
  • the moisture vapor transmission rate of the barrier layers 3 and 4 is set to lower than 9 g/(m 2 ⁇ d) so as to protect the quantum dots from the adverse environment or rapid changes in the environment.
  • deterioration of the quantum dots can be suppressed and change in the light intensity over time can be effectively inhibited.
  • the experiments described below proved that change in the light emission intensity over time could effectively be inhibited when the moisture vapor transmission rate of the barrier layers 3 and 4 was 0.1 g/(m 2 ⁇ d) or less.
  • the quantum dot layer 2 is joined to the barrier layers 3 and 4 with the adhesive layers 7 therebetween; alternatively, as shown in FIG. 1C , the barrier layers 3 and 4 can be directly jointed to both sides of a quantum dot layer 2 ′ without providing the adhesive layers 7 .
  • the barrier layers 3 and 4 can be joined to both surfaces of the quantum dot layer 2 ′. This makes it possible to reduce the sheet thickness of the wavelength converting member 1 ; for example, the thickness can be adjusted to 100 ⁇ m or less.
  • the quantum dot layer 2 can be formed with a thin sheet thickness, specifically of approximately 70 ⁇ m or less, which allows the wavelength converting member 1 to be formed with a thin sheet thickness.
  • the moisture vapor transmission rate of the barrier layers 3 and 4 is less than 9 g/(m 2 ⁇ d)
  • the material and structure of the barrier layers 3 and 4 that are preferred in this embodiment will be described. Note that the following embodiment does not limit the presence or absence of the adhesive layers or the state of the quantum dot layer to those in FIG. 1B and FIG. 1C .
  • the barrier layers 3 and 4 are each formed as a single layer of an organic layer 5 .
  • the organic layer 5 constitutes a resin film, and the barrier layers 3 and 4 are present as resin films, which results in easier handling of the barrier layers 3 and 4 .
  • the organic layer 5 abuts the quantum dot layer 2 .
  • the surface of the organic layer 5 is excellent in wettability, when the quantum dot layer 2 is formed by application, the quantum dot layer 2 can easily be formed with a given thickness on the surfaces of the barrier layers 3 and 4 .
  • the adhesion between the quantum dot layer 2 and the organic layer 5 can be improved by thermocompression bonding, etc.
  • the organic layer 5 is preferably a PET (polyethylene terephthalate) film. This allows for high light transmittance, and can effectively improve the above-described handling and the adhesion between the organic layer and the quantum dot layer 2 .
  • the barrier layers 3 and 4 are each formed to have a layered structure composed of the organic layer 5 and an inorganic layer 6 .
  • the organic layers 5 are formed as the innermost layers in the barrier layers 3 and 4 that are in contact with the quantum dot layer 2 , and the inorganic layers 6 are formed on the outer sides of the innermost layers (as the outermost layers).
  • the organic layers 5 are preferably PET (polyethylene terephthalate) films.
  • the inorganic layers 6 are preferably SiO 2 layers.
  • the inorganic layer 6 may be a layer of silicon nitride (SiN x ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), or silicon oxide (SiO 2 ), or a laminate thereof.
  • SiN x silicon nitride
  • Al 2 O 3 aluminum oxide
  • TiO 2 titanium oxide
  • SiO 2 silicon oxide
  • a laminate thereof a laminate thereof.
  • the provision of such organic layers 5 facilitates the handling of the barrier layers 3 and 4 . Further, since the organic layers 5 are placed inside in the barrier layers 3 and 4 , the organic layers 5 can abut the quantum dot layer 2 . Accordingly, as with FIG. 2 , when the quantum dot layer 2 is formed by application, the formation can be facilitated, and the adhesion between the quantum dot layer 2 and the organic layers 5 can be improved. Further, in FIG.
  • the inorganic layers 6 are provided in the barrier layers 3 and 4 , resulting in excellent barrier properties even when the barrier layers 3 and 4 are thin.
  • the barrier properties here refer to water vapor transmission properties and gas barrier properties.
  • the moisture vapor transmission rate of the barrier layers 3 and 4 can be made lower than 9 g/(m 2 ⁇ d) even when the thickness of the barrier layers 3 and 4 is as small as several tens of micrometers.
  • the gas barrier properties may be evaluated with oxygen transmission rate.
  • the barrier layers 3 and 4 each have a two-layer structure having a single layer of the organic layer 5 and a single layer of the inorganic layer 6 ; alternatively, they may each have a structure in which a plurality of the organic layers 5 and a plurality of the inorganic layers 6 alternately stacked (provided that the innermost layers of the barrier layers 3 and 4 are preferably the organic layers 5 ).
  • the barrier layers 3 and 4 are each formed with a layered structure composed of a plurality of the organic layers 5 and the inorganic layer 6 sandwiched between the organic layers 5 .
  • the organic layers 5 are preferably PET (polyethylene terephthalate) films.
  • the organic layers 5 preferably contain a diffusion agent.
  • a diffusion promoting layer can be formed between the quantum dot layer 2 and the organic layers 5 .
  • the inorganic layer 6 is preferably a SiO 2 layer.
  • the inorganic layer 6 may be a layer of silicon nitride (SiN),), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), or silicon oxide (SiO 2 ), or a laminate thereof.
  • the barrier layers 3 and 4 each have a three-layer structure composed of two organic layers 5 and one inorganic layer 6 ; alternatively, they may each have a structure composed of five or more layers.
  • both the benefits from the barrier structure shown in FIG. 2 and the benefits from the barrier structure shown in FIG. 3 can be achieved.
  • the innermost layers and the outermost layers in the barrier layers 3 and 4 are formed from the organic layers 5 . Accordingly, the handling of the barrier layers 3 and 4 can be more effectively facilitated. In addition, this makes it possible to effectively achieve higher adhesion between the barrier layers 3 and 4 and the quantum dot layer 2 , easier formation of the quantum dot layer 2 , and higher barrier properties of the barrier layers 3 and 4 .
  • the barrier layers 3 and 4 may each have a layered structure of inorganic layer 6 -organic layer 5 -inorganic layer 6 .
  • a plurality of the inorganic layers 6 are placed in each of the barrier layers 3 and 4 , which allows the barrier layers 3 and 4 to have more excellent barrier properties.
  • the barrier layers 3 and 4 are each placed on either side of the quantum dot layer 2 .
  • the barrier layers 3 and 4 can each have a different layered structure such as the single layer structure shown in FIG. 2 or the layered structures shown in FIG. 3 and FIG. 4A ; and the barrier properties, typified by the moisture vapor transmission rate, of the barrier layers 3 and 4 may have the nominal values, for example.
  • a plurality of barrier layers 3 , 4 , 7 , and 8 are stacked on both sides of the quantum dot layer 2 .
  • the barrier layers 3 , 4 , 7 , and 8 are each formed with a single layer structure or a layered structure shown in FIG. 2 , FIG. 3 , and FIG. 4A .
  • the barrier layer 3 is joined to the barrier layer 7 and the barrier layer 4 is joined to the barrier layer 8 using an adhesive or the like.
  • the barrier layers 3 , 4 , 7 , and 8 each have a layered structure of organic layer (for example, a PET film)-inorganic layer (for example, SiO 2 ).
  • the inorganic layers are provided inside to be closer to the quantum dot layer 2 , whereas the organic layers are provided on the outer sides.
  • the laminate has barrier layer 8 (organic layer-inorganic layer)-barrier layer 4 (organic layer-inorganic layer)-quantum dot layer 2 -barrier layer 7 (inorganic layer-organic layer)-barrier layer 3 (inorganic layer-organic layer) stacked in this order from the lower side to the upper side in the diagram.
  • the barrier layers placed on both sides of the quantum dot layer 2 have symmetric layered structures; alternatively, the barrier layers may have asymmetric structures.
  • the following processes may be performed to improve the light scattering capability of the wavelength converting member 1 .
  • surfaces of the barrier layers 3 and 4 are matted.
  • the barrier layers 3 and 4 can be each formed as a laminate of inorganic layer-organic layer-matted layer. In such a structure, surfaces 3 a and 4 a of the respective barrier layers 3 and 4 have irregularities.
  • a surface of one of the barrier layer 3 and the barrier layer 4 may be matted.
  • a light-scattering agent 8 may be contained in the quantum dot layer 2 as shown in FIG. 6 .
  • the material of the light-scattering agent 8 can include, but not limited to, fine particles of SiO 2 , BN, AlN, or the like.
  • the light-scattering agent 8 may be contained at 1 wt % to 10 wt % with respect to the quantum dot layer 2 .
  • the light-scattering agent 8 may be contained in the barrier layers 3 and 4 .
  • the concentration of the light-scattering agent 8 contained in the quantum dot layer 2 may be equal to or different from the concentration of the light-scattering agent contained in the barrier layers 3 and 4 .
  • the barrier layers 3 and 4 shown in FIG. 5 and FIG. 6 may have any one of the structures in FIG. 2 to FIG. 4B .
  • a surface of one of the barrier layer 3 and the barrier layer 4 may be matted; the quantum dot layer 2 may contain the light-scattering agent 8 ; and the barrier layer 3 or the barrier layer 4 may contain the light-scattering agent 8 .
  • the quantum dot layer 2 contains a thickening agent 9 .
  • the thickening agent 9 can include, but not limited to, carboxyvinyl polymers-based, carboxymethyl cellulose-based, methyl ether acrylate copolymers-based; and bentonite (aluminum silicate)-based or hectorite (magnesium silicate)-based additives.
  • the thickening agent 9 is contained, the viscosity of the resin composition forming the quantum dot layer 2 can be appropriately adjusted, and the quantum dot layer 2 can easily be formed with a given thickness and a given shape.
  • the barrier layers 3 and 4 may be matted as in FIG. 5 .
  • the quantum dot layer 2 preferably contains a dispersant to improve the dispersibility of the quantum dots contained in the quantum dot layer 2 .
  • a dispersant to improve the dispersibility of the quantum dots contained in the quantum dot layer 2 .
  • the material of the dispersant used include, but not limited to, additives of epoxy resins, polyurethanes, polycarboxylates, acid-formaldehyde condensate polymers of naphthalenesulfonic, polyethylene glycols, compounds of partial alkyl ester of a polycarboxylic acid, polyethers, polyalkylene polyamines, alkyl sulfonate salts, quaternary ammonium salts, higher alcohol alkylene oxides, polyhydric alcohol esters, alkyl polyamines, or polyphosphates.
  • DISPERBYK® available from BYK Japan KK can be given as a specific example.
  • the viscosity is preferably adjusted for example by adding the above thickening agent.
  • the values of the viscosity shown in Table 1 are mere examples, and the viscosity can be adjusted to a required level as appropriate.
  • the barrier layers are placed at least on both the top and bottom of the quantum dot layer 2 , and no limitation is placed on the provision of the barrier layers at edges on the sides of the quantum dot layer 2 (the right and left sides of the quantum dot layer 2 in the diagram).
  • a barrier layer is formed around the entire periphery of the quantum dot layer 2 .
  • FIG. 8 is a longitudinal sectional view of a wavelength converting member exemplifying an eighth embodiment of the present invention. The entire periphery of the quantum dot layer 2 is covered with the barrier layer 81 , which allows the entire periphery of the quantum dot layer 2 to be protected.
  • a wrap starting end 82 and a wrap finishing end 83 of the barrier layer 81 overlap on a top surface 80 of the quantum dot layer 2 . It will be appreciated that the position where the wrap starting end 82 and the wrap finishing end 83 overlap may be on any one of the top surface 80 , the bottom surface, the right side, and the left side of the quantum dot layer 2 .
  • the wrap starting end 82 and the wrap finishing end 83 are joined for example by thermocompression bonding and bonding.
  • the wrap starting end 82 and the wrap finishing end 83 overlap in a position facing one face of the quantum dot layer 2 , so that the barrier layer 81 can be used without waste.
  • the wavelength converting member 60 may be shaped like a stick, a block, or a chip, or may be shaped like a sheet obtained by extending the length dimension of the quantum dot layer 2 in the lateral direction in the diagram shown in FIG. 8 .
  • FIG. 9 is a longitudinal sectional view of a wavelength converting member exemplifying a ninth embodiment of the present invention.
  • the barrier layer 81 covers the entire periphery of the quantum dot layer 2 , and the wrap starting end 82 and the wrap finishing end 83 of the barrier layer 81 are joined for example by thermocompression bonding at an edge on one side of the quantum dot layer 2 (the right side of the quantum dot layer 2 in the diagram).
  • the structure in which the wrap starting end 82 and the wrap finishing end 83 of the barrier layer 81 are joined at an edge on one side of the quantum dot layer 2 allows the wrap starting end 82 and the wrap finishing end 83 to be joined in a region without affecting the quantum dot layer 2 .
  • the quantum dot layer 2 can be prevented from being heated, and thermal effects on the quantum dot layer 2 can be suppressed.
  • the wrap starting end 82 and the wrap finishing end 83 may be joined by bonding.
  • FIG. 10 is a longitudinal sectional view of a wavelength converting member exemplifying a tenth embodiment of the present invention.
  • the quantum dot layer 2 is provided on a lower barrier layer 85
  • an upper barrier layer 86 is provided to cover the lower barrier layer 85 and the quantum dot layer 2 .
  • the barrier layers 85 and 86 placed on both the top and bottom of the quantum dot layer 2 are joined to each other at edges on the sides of the quantum dot layer 2 (the right and left sides of the quantum dot layer 2 in the diagram) for example by bonding or thermocompression bonding. Since the barrier layers 85 and 86 are joined to each other at the edges of the quantum dot layer 2 , effects of the joining process on the quantum dot layer 2 can be suppressed.
  • the barrier layers 85 and 86 are two separate layers, and the quantum dot layer 2 is sandwiched between the barrier layers 85 and 86 . Accordingly, it is not necessary to wrap the entire periphery of the quantum dot layer 2 with the barrier layer 81 as in the structures shown in FIG. 8 and FIG. 9 . Therefore, the wavelength converting member 60 can easily be formed with the barrier layers being formed on the entire periphery of the quantum dot layer 2 , and the structure shown in FIG. 10 is suitable for mass production of the wavelength converting member 60 .
  • the quantum dot layer 2 is formed from a molding.
  • the quantum dot layer 2 is formed for example by injection molding, and the barrier layer(s) are provided on the molding of the quantum dot layer 2 .
  • the quantum dot layer 2 is not necessarily formed from a molding, and may be formed by application.
  • a barrier layer is previously prepared, and the quantum dot layer 2 is applied to the barrier layer.
  • the application can be performed for example by inkjet printing or a dispenser method. In particular, inkjet printing is preferred.
  • a quantum dot layer 62 is formed by inkjet printing.
  • the quantum dot layer 62 is formed by inkjet printing, and the structure of the barrier layer 81 provided on the quantum dot layer 62 is the same as that in FIG. 8 .
  • the quantum dot layer 62 is formed by inkjet printing, and the structure of the barrier layer 81 provided on the quantum dot layer 62 is the same as that in FIG. 9 .
  • the quantum dot layer 62 is formed by inkjet printing, and the structure of the barrier layers 81 provided on the quantum dot layer 62 is the same as that in FIG. 10 .
  • the quantum dot layer 62 When the quantum dot layer 62 is formed by inkjet printing, the quantum dot layer 62 can be formed with a significantly thin thickness. As a result, as shown in FIG. 11 to FIG. 13 , a surface 61 a of the wavelength converting member 61 can be planarized.
  • the wavelength converting members 1 , 60 , and 61 of the disclosed embodiments can each be incorporated into a back light unit 55 shown in FIG. 15 .
  • the wavelength converting member 1 is illustrated as an example.
  • the back light unit 55 is configured to have a plurality of light emitting devices 20 (LEDs) and the wavelength converting member 1 of this embodiment that faces the light emitting devices 20 .
  • the light emitting devices 20 are supported on a surface of a support 52 .
  • the back light unit 55 is placed on the back side of a display area 54 of, for example, a liquid crystal display, and constitutes part of a display device 50 .
  • a diffuser panel for diffusing light, and other sheets may be provided between the light emitting devices 20 and the display area 54 .
  • the wavelength converting member 1 When the wavelength converting member 1 is formed like a sheet as shown in FIG. 14 , the wavelength converting member 1 in the form of a single sheet may be placed between the light emitting devices 20 and the display area 54 as shown in FIG. 15 . Alternatively, for example, a plurality of the wavelength converting members 1 may be joined together to achieve a predetermined size. A structure in which the plurality of wavelength converting members 1 are joined together by tiling is hereinafter referred to as a compound wavelength converting member.
  • the compound wavelength converting member is placed instead of the wavelength converting member 1 of the display device 50 in FIG. 15 , and a diffuser panel is placed between the light emitting devices 20 and the compound wavelength converting member, that is, a structure of light emitting devices 20 -diffuser panel-compound wavelength converting member-display area 54
  • a diffuser panel is placed between the light emitting devices 20 and the compound wavelength converting member, that is, a structure of light emitting devices 20 -diffuser panel-compound wavelength converting member-display area 54
  • the diffuser panel Since the light diffused by the diffuser panel enters the compound wavelength converting member, the distribution of the light intensity depending on the distance from the light emitting devices 20 can be reduced.
  • the distance between the light emitting devices 20 and the compound wavelength converting member is longer than in the case where the diffuser panel is not provided, which reduces effects of heat radiated from the light emitting devices 20 on the quantum dots contained in the compound sheet.
  • the structure may have light emitting devices 20 -compound wavelength converting member 21 -diffuser panel 22 -display area 54 placed in this order. Accordingly, even when irregular reflection occurs at the joints between the wavelength converting members 1 or the emission color varies due to deterioration of quantum dots caused by water vapor having entered through the joints, color unevenness in the display of the display area 54 can be suitably reduced. Specifically, since the light output from the compound wavelength converting member 21 is diffused by the diffuser panel 22 and then enters the display area 54 , color unevenness in the display of the display area 54 can be reduced.
  • a diffuser panel is preferably placed on the light emission side of the compound wavelength converting member 21 not only when the compound wavelength converting member 21 is used for the display device shown in FIG. 16 , but also when the compound wavelength converting member 21 is used for example for a lighting.
  • the wavelength converting member 1 of this embodiment may be provided at least either on a surface of a light guide plate 40 or between the light guide plate 40 and light emitting devices 20 to serve as a light guide member. As shown in FIG. 17 , the light emitting devices 20 (LEDs) are placed to face the light guide plate 40 . Note that the use of the wavelength converting member 1 of the embodiments is not limited to those shown in FIG. 15 , FIG. 16 , and FIG. 17 .
  • change in the light emission intensity of the wavelength converting member 1 over time can effectively be reduced as compared with conventional techniques. Accordingly, when the wavelength converting member 1 of the disclosed embodiments is used for the back light unit 55 , the light guide member, etc., the wavelength conversion characteristics can be made stable and the lifespan of the back light unit 55 and the light guide member can be extended.
  • the wavelength converting member 1 of this embodiment can be flexible. This allows the wavelength converting member 1 to be suitably placed for example on a curved surface.
  • the wavelength converting member 1 of this embodiment can also be used for a lighting device, a light source unit, a light diffusion apparatus, a light reflector system, etc. other than the back light unit or the light guide member described above.
  • a wavelength converting member 61 in which one of the quantum dot layers 62 shown in FIG. 11 to FIG. 13 is formed by inkjet printing can be used.
  • the wavelength converting members 1 , 60 , and 61 shown in FIG. 1 to FIG. 13 may each be placed inside a glass capillary.
  • FIG. 18 is a conceptual diagram for illustrating apparatus for producing a wavelength converting member of this embodiment.
  • the apparatus is configured to have a first web roll 30 for feeding a resin film 10 to be the barrier layer 3 and a second web roll 31 for feeding a resin film 11 to be a barrier layer 4 , a take-up roll 32 , and a pressure contact portion 35 composed of a pair of nip rolls 33 and 34 , a coating means 36 , and a heating unit 38 .
  • the resin film 10 having a moisture vapor transmission rate of less than 9 g/(m 2 ⁇ d) is fed from the first web roll 30 , and a surface of the resin film 10 is coated with a resin composition 37 containing quantum dots using the coating means 36 .
  • the resin composition 37 can be applied for example by an application method using a known application coater or an impregnation coater. Examples of the coater include a gravure coater, a dip coater, and a comma knife coater. Alternatively, the resin composition 37 can be applied by inkjet printing.
  • the resin film 10 of which surface is coated with the resin composition 37 is heated by the heating unit 38 provided with heaters, etc. This leads to evaporation of a solvent contained in the resin composition 37 , and the quantum dot layer 2 is solidified to a certain extent at this time.
  • the resin film 11 having a moisture vapor transmission rate of less than 9 g/(m 2 ⁇ d) fed from the second web roll 31 abuts an exposed surface of the quantum dot layer 2 , and a layered structure of resin film 11 -quantum dot layer 2 -resin film 10 is pressured and welded between the nip rolls 33 and 34 composing the pressure contact portion 35 .
  • the pressure contact portion 35 the boundaries of the quantum dot layer 2 and the resin films 10 and 11 are fixed by thermocompression bonding.
  • a sheet member 39 composed of resin film 11 -quantum dot layer 2 -resin film 10 is wound on the take-up roll 32 .
  • the wound sheet member 39 is cut into a predetermined size, thereby obtaining the wavelength converting member 1 shaped like a sheet.
  • the quantum dot layer 2 is formed by application on the resin film 10 , and the thickness of the quantum dot layer 2 formed can be roughly from 10 ⁇ m to 500 ⁇ m. Further, the thickness of the resin films 10 and 11 is roughly from a few tens of micrometers to 1000 micrometers, so that the thickness of the wavelength converting member 1 is roughly from 50 ⁇ m to 2500 ⁇ m. Note that the thickness of the quantum dot layer 2 and the thickness of the wavelength converting member 1 are not limited.
  • the resin films 10 and 11 illustrated in FIG. 18 each have a single layer of the organic layer 5 shown in FIG. 2 or a layered structure having the organic layer 5 and the inorganic layer 6 shown in one of FIG. 3 and FIGS. 4A and 4B .
  • the inorganic layer 6 is provided between the plurality of organic layers 5 as shown in FIG. 4A .
  • the resin films 10 and 11 preferably each have a layered structure of PET film-SiO 2 layer-PET film.
  • a stack of a plurality of resin films can be fed to be placed on both surfaces of the quantum dot layer to provide a structure in which the a plurality of barrier layers are placed on both sides of the quantum dot layer as shown in FIG. 4B .
  • the matting process shown in FIG. 5 is performed on one or both of the surfaces of the sheet member 39 wound on the take-up roll 32 shown in FIG. 18 or is performed on both surfaces of the wavelength converting member 1 shown in FIG. 14 , formed by cutting the sheet member 39 into a predetermined size.
  • the matting process can be performed for example by sandblasting the sheet surface, or by coating the sheet surface with a mat layer, but is not limited thereto.
  • the light-scattering agent 8 can be added to the resin composition 37 to be applied with the coating means 36 shown in FIG. 18 .
  • the viscosity of the resin composition 37 can be suitably adjusted.
  • the viscosity can be adjusted to, for example, around several hundreds of mPa ⁇ s to several thousands of mPa ⁇ s, without limitation.
  • Suitably adjusting the viscosity of the resin composition 37 to optimize the fluidity of the resin composition 37 allows for the formation of the quantum dot layer 2 with a generally uniform thickness on a surface of the resin film 10 .
  • the quantum dot layer 2 is formed by application to a surface of the resin film 10 ; alternatively, the resin films 10 and 11 may be stuck to both surfaces of the molding of the quantum dot layer 2 having previously been formed.
  • the quantum dot layer 2 may be formed using a method such as injection molding, extrusion molding, blow molding, thermoforming, compression molding, calendaring, blown film extrusion, or casting.
  • the thickness of the molding of the quantum dot layer 2 can be around 10 ⁇ m to 500 ⁇ m.
  • the molding of the quantum dot layer 2 can be formed with a thickness of approximately 300 ⁇ m.
  • the resin films 10 and 11 can be stuck to both sides of the molding of the quantum dot layer 2 by thermocompression bonding, etc. Note that adhesive layers may be provided between the quantum dot layer 2 and the resin films 10 and 11 .
  • Methods for making the wavelength converting member 1 into a film include methods using a coating machine and methods using a molding machine. Curing methods using a coating machine include UV curing and heat curing.
  • the resin films 10 and 11 having a moisture vapor transmission rate of less than 9 g/(m 2 ⁇ d) can suitably and easily be placed on both sides of the quantum dot layer 2 .
  • FIG. 19 is a conceptual diagram for illustrating a method of producing a wavelength converting member of the eighth embodiment of the present invention.
  • the quantum dot layer 2 is formed from a molding.
  • the barrier layer 81 is placed on the entire periphery of the quantum dot layer 2 .
  • the wrap starting end 82 and the wrap finishing end 83 overlap on one side (top surface 80 in FIG.
  • thermocompression bonding member 90 can be thermocompression bonding for example by while heating, pressing the wrap starting end 82 and the wrap finishing end 83 or joining them under pressure using rollers.
  • the wrap starting end 82 and the wrap finishing end 83 can be joined using an adhesive instead of thermocompression bonding.
  • the production method shown in FIG. 19 enables easily and suitably covering the entire periphery of the quantum dot layer 2 with the barrier layer 81 .
  • FIG. 20 is a conceptual diagram for illustrating a method of producing a wavelength converting member of the ninth embodiment of the present invention.
  • the quantum dot layer 2 is formed from a molding.
  • the wrap starting end 82 of the barrier layer 81 is located at an edge on one side of the quantum dot layer 2
  • the barrier layer 81 is wrapped around the quantum dot layer 2
  • the wrap starting end 82 and the wrap finishing end 83 overlap at the edge of the quantum dot layer 2 as shown in the right diagram of FIG. 20 .
  • the wrap starting end 82 and the wrap finishing end 83 are then thermocompression bonded using thermocompression bonding member 90 .
  • the wrap starting end 82 and the wrap finishing end 83 of the barrier layer 81 overlap at an edge on one side of the quantum dot layer 2 , which can reduce effects caused by joining the wrap starting end 82 and the wrap finishing end 83 for example by thermocompression bonding on the quantum dot layer 2 (thermal effects, etc.).
  • the quantum dot layer 2 can be prevented from being deteriorated in the step of forming the barrier layer 81 .
  • the wrap starting end 82 and the wrap finishing end 83 may be joined by bonding.
  • FIG. 21 is a conceptual diagram for illustrating a method of producing a wavelength converting member of the tenth embodiment of the present invention.
  • a plurality of the quantum dot layers 2 are placed at intervals on the barrier layer 85 .
  • the quantum dot layers 2 are each formed from a molding, and the plurality of the quantum dot layers 2 are arranged on the barrier layer 85 .
  • the quantum dot layers 2 are preferably fixed to the barrier layer 85 by bonding.
  • the barrier layer 86 is placed over the surface of the barrier layer 85 and the quantum dot layers 2 .
  • an adhesive layer is previously applied to the inner surface of the barrier layer 86 (facing the barrier layer 85 and the quantum dot layers 2 ), and the barrier layer 85 is stuck to the barrier layer 86 with the quantum dot layers 2 therebetween.
  • the barrier layer 85 and the barrier layer 86 can be stuck together by thermocompression bonding. As shown by the chain lines in FIG. 21B , the joined barrier layers 85 and 86 are cut between the adjacent quantum dot layers 2 thereby isolating the quantum dot layers 2 .
  • a plurality of the wavelength converting members 60 can be obtained at the same time.
  • the barrier layers 85 and 86 overlap, the barrier layers can be placed on the entire periphery of the quantum dot layers 2 , so that the wavelength converting members 60 in each of which the barrier layer is formed on the entire periphery of the quantum dot layers 2 can be easily and suitably produced, and the method is suitable for mass production of the wavelength converting members 60 .
  • the entire periphery of the quantum dot layer(s) 2 can be covered by the barrier layer, the entire periphery of the quantum dot layer(s) 2 can be suitably protected by the barrier layer(s), and the durability can be more effectively improved. Thus, deterioration of the quantum dot layer(s) 2 can be more suitably suppressed.
  • the quantum dot layers(s) 2 shown in FIG. 19 to FIG. 21 are formed from a molding; alternatively, the quantum dot layer(s) 2 may be formed by inkjet printing as shown in FIG. 11 to FIG. 13 .
  • a resin composition in which quantum dots are dispersed is discharged onto the top of the barrier layer by inkjet printing.
  • the discharged resin composition is preferably heated for stabilization.
  • the heating temperature is preferably 30° C. to 80° C. and more preferably 30° C. to 50° C.
  • the resin films 10 and 11 each have an organic layer, and it is preferable that the organic layer abuts the quantum dot layer(s) 2 in the production process.
  • the quantum dot layer(s) 2 can be formed on a surface of the organic layer with high wettability, the quantum dot layer(s) 2 can be formed more easily, and the adhesion between the barrier layer and the quantum dot layer(s) 2 can be improved due to the affinity therebetween.
  • the layered structure of the resin films 10 and 11 each having a plurality of organic layers and an inorganic layer provided between the organic layers allows the organic layers to be placed on both surfaces of the resin films 10 and 11 . This improves handling, and allows for easier formation of the quantum dot layer 2 on the surfaces of the resin films 10 and 11 .
  • the inorganic layers included in the barrier layers make it possible to effectively improve barrier properties of the resin films 10 and 11 (barrier layers).
  • the resin films 10 and 11 can each have a layered structure composed of a plurality of inorganic layers and an organic layer provided between the inorganic layers. Further, a plurality of resin films can be placed by being stacked. In this case, the resin films 10 and 11 can be joined by sticking them together using an adhesive or by thermocompression bonding.
  • an elastomer was dissolved in organosilane, thereby obtaining a QD ink (resin composition) in which quantum dots having a fluorescence wavelength of approximately 520 nm (green)(also referred to as “green quantum dots”) were dispersed.
  • QD ink resin composition
  • quantum dots having a fluorescence wavelength of approximately 520 nm (green)(also referred to as “green quantum dots”) were dispersed.
  • HYBRAR® 7311 from KURARAY CO., LTD. was used.
  • a laminate of glass-QD ink-barrier layer was obtained. Heat treatment was performed to evaporate the solvent of the QD ink, thereby obtaining a quantum dot layer. In this case, the following structure was employed for the barrier layer.
  • the thickness of the barrier layer was 49 ⁇ m.
  • the thickness of the barrier layer was 50 ⁇ m.
  • a cyclic olefin-based film A cyclic olefin-based film.
  • Laminates using the barrier layers of Sample 1 to Sample 3 above were subjected to an endurance test under conditions of temperature: 60° C. and humidity: 90%.
  • the light emission intensity was measured using a total luminous flux measurement system available from Otsuka Electronics Co., Ltd. by measuring the total luminous flux of the light caused in each sample by blue (wavelength: 450 nm) LED excitation light.
  • FIG. 23 is a graph showing the relationship the elapsed time and the blue light intensity (450 nm area) for each sample.
  • the blue light intensity corresponds to the area of the emission peak observed at a wavelength of 450 nm.
  • the blue light intensity (450 nm area) was found to gradually increase over time in Sample 2 and Sample 3. In other words, that the intensity of blue light was found to increase over time in Sample 2 and Sample 3.
  • the blue light intensity (450 nm area) was constant in Sample 1, and the light intensity of blue light did not change over time. Further, it was found for Sample 1 that while the initial blue light intensity (time: 0 h) and the blue light intensity after 150 hours were 0.0075 (time: 0 h) and 0.0070 (150 h), respectively; thus, the blue light intensity hardly changed, and the change in the blue light intensity was within 10%.
  • the change in the blue light intensity is represented by [(initial blue light intensity ⁇ blue light intensity after 150 hours)/initial blue light intensity] ⁇ 100(%)(absolute value).
  • FIG. 24 is a graph showing the relationship the elapsed time and the green light intensity (green area) for each sample.
  • the green light intensity corresponds to the area of the emission peak observed at a wavelength of 520 nm.
  • the green light intensity in Sample 2 an Sample 3, the green light intensity (green area) was found to rapidly decrease over time.
  • the increased blue light intensity and the reduced green light intensity as in Sample 2 and Sample 3 mean that the green quantum dots deteriorated over time.
  • it was found for Sample 1 that the blue light intensity (450 nm area) did not change over time, and the reduction in the green light intensity (green area) over time was successfully made smaller compared with Sample 2 and Sample 3.
  • the change over time was smaller compared with Sample 2 and Sample 3, and the change in the green light intensity was within 50%.
  • the change in the green light intensity is represented by [(initial green light intensity ⁇ green light intensity after 150 hours)/initial green light intensity] ⁇ 100(%)(absolute value).
  • the measurement results presented in FIG. 23 and FIG. 24 show that deterioration of the quantum dots can be suitably suppressed with the use of the barrier layer of Sample 1, thereby effectively inhibiting the change in the light emission intensity over time.
  • the moisture vapor transmission rate of the barrier layer was set to a value lower than 9 g/(m 2 ⁇ d). Further, the moisture vapor transmission rate range of the barrier layer of Sample 1, that is, 6 ⁇ 10 ⁇ 3 g/(m 2 ⁇ d) or less is assumed to be the most preferable range.
  • barrier films were evaluated.
  • barrier layers of Sample 1 above, Sample 5 in which the moisture vapor transmission rate was 1.6 ⁇ 10 ⁇ 2 g/(m 2 ⁇ d), and Sample 6 in which the moisture vapor transmission rate was 8.4 ⁇ 10 ⁇ 3 g/(m 2 ⁇ d) were used.
  • the light transmittance (%) was 86.8 (total light) for Sample 1, 92.5 (wavelength: 450 nm) for Sample 5, and 90.6 (wavelength: 450 nm) for Sample 6.
  • FIG. 25 is a graph showing the relationship the elapsed time and the x-coordinate of the CIE color space chromaticity diagram for each sample.
  • Sample 4 is a sample without barrier layers (the quantum dot layer formed from a molding).
  • both sides of the quantum dot layer were sandwiched between the barrier films of the above samples, and light emitting devices (LEDs) were placed on the side of one of the barrier films with a diffuser panel provided therebetween. Measurements were performed from the side of the other barrier film using a spectrometer.
  • LEDs light emitting devices
  • FIG. 22 is a schematic view of a light emission testing unit used in experiments. Part of the light emission testing unit is shown by a longitudinal sectional view.
  • a light emission testing unit 56 was provided with the light emitting devices 20 (LEDs) and Sample S being placed in a position facing the light emitting devices 20 .
  • Each sample in the experiments was a sheet, in which a quantum dot layer was sandwiched between the above barrier films, and the end faces of the barrier films were bonded for example with an epoxy bond and stuck together using aluminum tape.
  • the light emitting devices 20 were supported on a surface of the support 52 , and a diffuser panel 22 was provided between the light emitting devices 20 and Sample S.
  • All sides of the light emitting devices 20 were surrounded by a cylindrical reflective sheet 23 , and the diffuser panel 22 was placed on the top of the reflective sheet 23 .
  • the light emitted from the light emitting devices 20 was diffused by the diffuser panel 22 and entered Sample S.
  • the reflective sheet 23 had a box shape with an opening of for example 3 cm square, and the reflective sheet 23 had a height (distance of the diffuser panel 22 from the support 52 ) of for example 4 cm.
  • the light emitted from the light emitting devices 20 was then made to enter Sample S through the diffuser panel 22 , and the light output from the top of Sample S was measured using the total luminous flux measurement system. Note that the experiment was performed under conditions of temperature: 60° C. and humidity: 90%. Using the light emission testing unit 56 shown in FIG. 22 , the light emission intensity of the light emitting devices 20 through Sample S can be accurately measured.
  • the x-coordinate did not change over time for Samples 1, 5, and 6 except for Sample 4 without barrier layers.
  • the initial x-coordinate (time: 0 h) and the x-coordinate after 200 hours were 0.208 (time: 0 h) and 0.210 (200 h), respectively; thus, the change in the x-coordinate was found to be within 1%.
  • the initial x-coordinate (time: 0 h) and the x-coordinate after 200 hours were 0.210 (time: 0 h) and 0.213 (200 h), respectively; thus, the change in the x-coordinate was found to be within 2%.
  • the x-coordinate change is represented by [(initial x-coordinate ⁇ x-coordinate after 200 hours)/initial x-coordinate] ⁇ 100(%)(absolute value).
  • FIG. 26 is a graph showing the relationship the elapsed time and the y-coordinate of the CIE color space chromaticity diagram for each sample. As shown in FIG. 26 , the y-coordinate did not change over time in Samples 1, 5, and 6 except for Sample 4 without barrier layers. In Sample 1 and Sample 5, the initial y-coordinate (time: 0 h) and the y-coordinate after 200 hours were 0.170 (time: 0 h) and 0.190 (200 h), respectively; thus, the change in the y-coordinate was found to be within 15%.
  • the initial y-coordinate (time: 0 h) and the y-coordinate after 200 hours were 0.170 (time: 0 h) and 0.195 (200 h), respectively; thus, the change in the y-coordinate was found to be within 15%.
  • the y-coordinate change is represented by [(initial y-coordinate ⁇ y-coordinate after 200 hours)/initial y-coordinate] ⁇ 100(%)(absolute value).
  • FIG. 27 is a graph showing the relationship the elapsed time and the normalized illumination for each sample. As shown in FIG. 27 , the normalized illumination did not change over time in Samples 1, 5, and 6 except for Sample 4 without barrier layers. In this result, the normalized illumination changed by ⁇ 30% over 200 hours.
  • a barrier layer having a moisture vapor transmission rate of 10 ⁇ 2 g/(m 2 ⁇ d) was used as Sample 7
  • a barrier layer having a moisture vapor transmission rate of 10 ⁇ 1 g/(m 2 ⁇ d) was used as Sample 8.
  • the moisture vapor transmission rates of the barrier layers had the nominal values. Further, a sheet described in the description of FIG. 22 above was formed and the spectrum was measured over time using the light emission testing unit of FIG. 22 .
  • FIG. 28 is a graph showing the relationship the elapsed time and the x-coordinate of the CIE color space chromaticity diagram for each sample.
  • Sample 7 and Sample 8 Sample 1 and Sample 2 described above were used.
  • the initial x-coordinate (time: 0 h) and the x-coordinate after 1100 hours were 0.219 (time: 0 h) and 0.219 (1100 h), respectively; thus, the change in the x-coordinate was found to be 0%.
  • the x-coordinate change is represented by [(initial x-coordinate ⁇ x-coordinate after 1100 hours)/initial x-coordinate] ⁇ 100(%)(absolute value).
  • FIG. 29 is a graph showing the relationship the elapsed time and the y-coordinate of the CIE color space chromaticity diagram for each sample. As shown in FIG. 29 , change in the y-coordinate over time was not observed or was very small in Samples 1, 7, and 8 except for Sample 2 having a barrier layer with a moisture vapor transmission rate of 9 g/(m 2 ⁇ d). In Sample 1 and Sample 8, the initial y-coordinate (time: 0 h) and the y-coordinate after 1100 hours were 0.190 (time: 0 h) and 0.210 (1100 h), respectively; thus, the change in the y-coordinate was found to be within 15%.
  • the initial y-coordinate (time: 0 h) and the y-coordinate after 1100 hours were 0.160 (time: 0 h) and 0.195 (1100 h), respectively; thus, the change in the y-coordinate was found to be within 25%.
  • the y-coordinate change is represented by [(initial y-coordinate ⁇ y-coordinate after 1100 hours)/initial y-coordinate] ⁇ 100(%)(absolute value).
  • FIG. 30 is a graph showing the relationship the elapsed time and the normalized illumination for each sample. As shown in FIG. 30 , change in the normalized illumination over time was not observed or was very small in Samples 1, 7, and 8 except for Sample 2 having a barrier layer with a moisture vapor transmission rate of 9 g/(m 2 ⁇ d). In this result, the normalized illumination changed by ⁇ 30% over 200 hours.
  • barrier layer(s) having a moisture vapor transmission rate of approximately 0.1 g/(m 2 ⁇ d) or more were found to sufficiently improve durability. Based on the above, the moisture vapor transmission rate of the barrier layer(s) was preferably set to 0.1 g/(m 2 ⁇ d) or less.
  • the quantum dot layers used in the experiments high concentration layers and low concentration layers were prepared.
  • the barrier layer a sheet member in which a SiO 2 layer was formed on a PET film that had a moisture vapor transmission rate of approximately 10 ⁇ 3 g/(m 2 ⁇ d) was used.
  • the samples (wavelength converting members) used in the experiments had the following structures.
  • a wavelength converting member constituted by only a quantum dot layer without barrier layers.
  • the wavelength converting member shown in FIG. 8 The wavelength converting member shown in FIG. 8 . Note that the wrap starting end and the wrap finishing end of the barrier layer were thermocompression bonded in an overlapping manner on the top surface of the quantum dot layer.
  • the wavelength converting member shown in FIG. 10 The wavelength converting member shown in FIG. 10 . Note that the wrap starting end and the wrap finishing end of the barrier layer were thermocompression bonded in an overlapping manner at edges on the sides of the quantum dot layer.
  • FIG. 31 is a graph showing the relationship the elapsed time and the blue light intensity (450 nm area) for Sample 9 to Sample 11.
  • the blue light intensity corresponds to the area of the emission peak observed at a wavelength of 450 nm.
  • the blue light intensity (450 nm area) was found to gradually increase over time in Sample 9. In other words, the intensity of blue light was found to increase over time in Sample 9. On the other hand, it was found that the blue light intensity (450 nm area) stayed constant in Sample 10 and Sample 11, and the light intensity of blue light was kept unchanged over time. Further, the initial blue light intensity (time: 0 h) and the blue light intensity after 450 hours were 0.0049 (time: 0 h) and 0.0056 (450 h), respectively in Sample 10 and were 0.0053 (time: 0 h) and 0.0053 (450 h), respectively in Sample 11.
  • FIG. 32 is a graph showing the relationship the elapsed time and the green light intensity (green area) for Sample 9 to Sample 11.
  • the green light intensity corresponds to the area of the emission peak observed at a wavelength of 520 nm.
  • the green light intensity (green area) was found to rapidly decrease in 100 hours from the start of the experiment.
  • the increased blue light intensity and the reduced green light intensity as in Sample 9 mean that the green quantum dots deteriorated over time.
  • the blue light intensity (450 nm area) did not change over time in Sample 10 and Sample 11, and the reduction in the green light intensity (green area) over time was made smaller compared with Sample 9.
  • the initial green light intensity (time: 0 h) and the green light intensity after 450 hours were 0.0017 (time: 0 h) and 0.0016 (450 h), respectively in Sample 10 and were 0.0022 (time: 0 h) and 0.0023 (450 h), respectively in Sample 11. Further, it was found for Sample 10 and Sample 11 that the change from the initial green light intensity (time: 0 h) to the green light intensity after 450 hours was smaller compared with Sample 9, and the change in the green light intensity was within 10%.
  • the change in the green light intensity is represented by [(initial green light intensity ⁇ green light intensity after 450 hours)/initial green light intensity] ⁇ 100(%)(absolute value).
  • FIG. 33 is a graph showing the relationship the elapsed time and the red light intensity (red area) for Sample 9 to Sample 11.
  • the red light intensity corresponds to the area of the emission peak observed at a wavelength of 650 nm.
  • the red light intensity (red area) was found to rapidly decrease in 50 hours from the start of the experiment.
  • the increased blue light intensity and the reduced red light intensity as in Sample 9 mean that the red quantum dots deteriorated over time.
  • the blue light intensity (450 nm area) did not change over time in Sample 10 and Sample 11, and the reduction in the red light intensity (red area) over time was successfully made smaller compared with Sample 9.
  • the initial red light intensity (time: 0 h) and the red light intensity after 450 hours were 0.0017 (time: 0 h) and 0.0014 (450 h), respectively in Sample 10 and were 0.0022 (time: 0 h) and 0.0018 (450 h), respectively in Sample 11. It was found for Sample 10 and Sample 11 that the change from the initial red light intensity (time: 0 h) to the red light intensity after 450 hours was smaller compared with Sample 9, and the change in the red light intensity was within 25%.
  • the change in the red light intensity is represented by [(initial red light intensity ⁇ red light intensity after 450 hours)/initial red light intensity] ⁇ 100(%)(absolute value).
  • FIG. 34 is a graph showing the relationship the elapsed time and the x-coordinate of the CIE color space chromaticity diagram for Sample 9 to Sample 11.
  • the x-coordinate did not change substantially over time in any of the samples.
  • the initial x-coordinate (time: 0 h) and the x-coordinate after 450 hours were 0.2013 (time: 0 h) and 0.1892 (450 h), respectively; thus, the change in the x-coordinate was found to be within 10%.
  • the initial x-coordinate (time: 0 h) and the x-coordinate after 450 hours were 0.2080 (time: 0 h) and 0.1998 (450 h), respectively; thus, the change in the x-coordinate was found to be within 5%.
  • the x-coordinate change is represented by [(initial x-coordinate ⁇ x-coordinate after 450 hours)/initial x-coordinate] ⁇ 100(%)(absolute value).
  • FIG. 35 is a graph showing the relationship the elapsed time and the y-coordinate of the CIE color space chromaticity diagram for Sample 9 to Sample 11.
  • the y-coordinate of Sample 9 that was not provided with barrier layers significantly changed over time as compared with Sample 9 and Sample 10 in which the entire periphery of the quantum dot layer was surrounded by the barrier layer.
  • the initial y-coordinate (time: 0 h) and the y-coordinate after 450 hours were 0.1428 (time: 0 h) and 0.1210 (450 h), respectively; thus, the change in the y-coordinate was found to be within 20%.
  • the initial y-coordinate (time: 0 h) and the y-coordinate after 450 hours were 0.1626 (time: 0 h) and 0.1635 (450 h), respectively; thus, the change in the y-coordinate was found to be within 1%.
  • the y-coordinate change is represented by [(initial y-coordinate ⁇ y-coordinate after 450 hours)/initial y-coordinate] ⁇ 100(%)(absolute value).
  • a wavelength converting member constituted by only a quantum dot layer without barrier layers.
  • the wavelength converting member shown in FIG. 8 The wavelength converting member shown in FIG. 8 . Note that the wrap starting end and the wrap finishing end of the barrier layer were thermocompression bonded in an overlapping manner on the top surface of the quantum dot layer.
  • the wavelength converting member shown in FIG. 10 The wavelength converting member shown in FIG. 10 . Note that the wrap starting end and the wrap finishing end of the barrier layer were thermocompression bonded in an overlapping manner at edges on the sides of the quantum dot layer.
  • the above samples were subjected to an endurance test under conditions of temperature: 60° C. and humidity: 90%.
  • the light emission intensity was measured using a total luminous flux measurement system available from Otsuka Electronics Co., Ltd. by measuring the total luminous flux of the light caused in each sample by blue (wavelength: 450 nm) LED excitation light.
  • FIG. 36 is a graph of the measurements of the relationship the elapsed time and the blue light intensity (450 nm area) for Sample 12 to Sample 14.
  • the intensity of blue light was found to increase over time in Sample 12. On the other hand, it was found that the blue light intensity (450 nm area) stayed constant in Sample 13 and Sample 14, and the light intensity of blue light was kept unchanged over time. Further, the initial blue light intensity (time: 0 h) and the blue light intensity after 189 hours were 0.0010 (time: 0 h) and 0.0013 (189 h), respectively in Sample 13 and were 0.0010 (time: 0 h) and 0.0009 (189 h), respectively in Sample 14.
  • FIG. 37 is a graph showing the relationship the elapsed time and the green light intensity (green area) for Sample 12 to Sample 14.
  • the green light intensity corresponds to the area of the emission peak observed at a wavelength of 520 nm.
  • the initial green light intensity (time: 0 h) and the green light intensity after 189 hours were 0.0017 (time: 0 h) and 0.0019 (189 h), respectively in Sample 13 and were 0.0015 (time: 0 h) and 0.0018 (189 h), respectively in Sample 14.
  • FIG. 38 is a graph showing the relationship the elapsed time and the red light intensity (red area) for Sample 12 to Sample 14.
  • the red light intensity corresponds to the area of the emission peak observed at a wavelength of 650 nm.
  • the initial red light intensity (time: 0 h) and the red light intensity after 189 hours were 0.0038 (time: 0 h) and 0.0039 (189 h), respectively in Sample 13 and were 0.0037 (time: 0 h) and 0.0040 (189 h), respectively in Sample 14.
  • FIG. 39 is a graph showing the relationship the elapsed time and the x-coordinate of the CIE color space chromaticity diagram for Sample 12 to Sample 14.
  • the initial x-coordinate (time: 0 h) and the x-coordinate after 189 hours were 0.3729 (time: 0 h) and 0.3524 (189 h), respectively; thus, the change in the x-coordinate was found to be within 10%.
  • FIG. 40 is a graph showing the relationship the elapsed time and the y-coordinate of the CIE color space chromaticity diagram for Sample 12 to Sample 14.
  • the y-coordinate change is represented by [(initial y-coordinate ⁇ y-coordinate after 189 hours)/initial y-coordinate] ⁇ 100(%)(absolute value).
  • changes in the x-coordinate and the y-coordinate over time were smaller in Sample 13 and Sample 14 in which the entire periphery of the quantum dot layer was surrounded by the barrier layer compared with Sample 12 that was not provided with barrier layers.
  • FIG. 41 to FIG. 43 show the light emission spectrum of light output when blue light of 450 nm was applied to Sample 9 to Sample 11.
  • the horizontal axis represents the wavelength, and the vertical axis represents the light intensity.
  • Each diagram shows the spectra after 0 hours (immediately after the start of the experiment) and after 450 hours.
  • FIG. 41 in Sample 9, significant change in the spectrum was observed in 450 hours from 0 hours.
  • FIG. 42 and FIG. 43 in Sample 10 and Sample 11, change in the spectrum in 450 hours from 0 hours was smaller compared with Sample 9. It was found for Sample 10 and Sample 11 that since the barrier layer covered the periphery of the quantum dot layer, deterioration of quantum dots was suitably suppressed; thus, change in the light emission intensity over time was effectively inhibited.
  • FIG. 44 to FIG. 46 show the light emission spectrum of light output when blue light of 450 nm was applied to Sample 12 to Sample 14.
  • the horizontal axis represents the wavelength, and the vertical axis represents the light intensity.
  • Each diagram shows the spectra after 0 hours (immediately after the start of the experiment) and after 189 hours.
  • FIG. 44 in Sample 12, significant change in the spectra was observed in 189 hours from 0 hours.
  • FIG. 45 and FIG. 46 the change in the spectrum in 189 hours from 0 hours was found to be smaller in in Sample 13 and Sample 14 compared with Sample 12. It was found for Sample 13 and Sample 14 that since the barrier layer covered the periphery of the quantum dot layer, deterioration of quantum dots was suitably suppressed; thus, change in the light emission intensity over time was effectively suppressed.
  • the present invention can provide a wavelength converting member which makes it possible to effectively inhibit change in the light emission intensity over time; and a back light unit, a light guide member, a display device, and the like that have stable wavelength conversion characteristics can be obtained using the wavelength converting member of the present invention.

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