US20170166807A1 - Phosphor containing particle, and light emitting device and phosphor containing sheet using the same - Google Patents
Phosphor containing particle, and light emitting device and phosphor containing sheet using the same Download PDFInfo
- Publication number
- US20170166807A1 US20170166807A1 US15/375,219 US201615375219A US2017166807A1 US 20170166807 A1 US20170166807 A1 US 20170166807A1 US 201615375219 A US201615375219 A US 201615375219A US 2017166807 A1 US2017166807 A1 US 2017166807A1
- Authority
- US
- United States
- Prior art keywords
- phosphor
- containing particle
- semiconductor nanoparticle
- phosphor containing
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 655
- 239000002245 particle Substances 0.000 title claims abstract description 287
- 239000002105 nanoparticle Substances 0.000 claims abstract description 311
- 239000004065 semiconductor Substances 0.000 claims abstract description 268
- 239000002608 ionic liquid Substances 0.000 claims abstract description 118
- 239000011159 matrix material Substances 0.000 claims abstract description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 103
- 229920005989 resin Polymers 0.000 claims description 91
- 239000011347 resin Substances 0.000 claims description 91
- 125000000524 functional group Chemical group 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 57
- 239000000377 silicon dioxide Substances 0.000 claims description 50
- 239000011148 porous material Substances 0.000 claims description 33
- 108010043121 Green Fluorescent Proteins Proteins 0.000 claims description 19
- 229910010272 inorganic material Inorganic materials 0.000 claims description 12
- 239000011147 inorganic material Substances 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 68
- 238000000034 method Methods 0.000 description 61
- 239000002609 medium Substances 0.000 description 34
- 230000015556 catabolic process Effects 0.000 description 25
- 238000006731 degradation reaction Methods 0.000 description 25
- 239000000243 solution Substances 0.000 description 25
- 230000002829 reductive effect Effects 0.000 description 24
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 22
- 230000008569 process Effects 0.000 description 22
- PURYCGFBBYVQEQ-UHFFFAOYSA-N 1-(dimethylamino)ethanethiol Chemical compound CC(S)N(C)C PURYCGFBBYVQEQ-UHFFFAOYSA-N 0.000 description 21
- 239000004925 Acrylic resin Substances 0.000 description 21
- 229920000178 Acrylic resin Polymers 0.000 description 21
- 239000000203 mixture Substances 0.000 description 20
- -1 phosphonium ion Chemical class 0.000 description 20
- 239000000049 pigment Substances 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000002775 capsule Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 238000012360 testing method Methods 0.000 description 16
- 239000012071 phase Substances 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 12
- 238000001723 curing Methods 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 239000003431 cross linking reagent Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 150000002894 organic compounds Chemical class 0.000 description 9
- 239000011164 primary particle Substances 0.000 description 9
- 238000006467 substitution reaction Methods 0.000 description 9
- 239000013067 intermediate product Substances 0.000 description 8
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 8
- 229920002050 silicone resin Polymers 0.000 description 8
- 238000006116 polymerization reaction Methods 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011325 microbead Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 238000005054 agglomeration Methods 0.000 description 5
- 230000002776 aggregation Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000344 soap Substances 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000008346 aqueous phase Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000006482 condensation reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 4
- 229920000053 polysorbate 80 Polymers 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 238000006862 quantum yield reaction Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000007539 photo-oxidation reaction Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000005476 size effect Effects 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- USFMMZYROHDWPJ-UHFFFAOYSA-N trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium Chemical compound CC(=C)C(=O)OCC[N+](C)(C)C USFMMZYROHDWPJ-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N 1H-imidazole Chemical group C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- DYAOREPNYXXCOA-UHFFFAOYSA-N 2-sulfanylundecanoic acid Chemical compound CCCCCCCCCC(S)C(O)=O DYAOREPNYXXCOA-UHFFFAOYSA-N 0.000 description 2
- GLISOBUNKGBQCL-UHFFFAOYSA-N 3-[ethoxy(dimethyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(C)CCCN GLISOBUNKGBQCL-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 2
- YHCFDXGTEQAXQB-UHFFFAOYSA-N C(C=C)(=O)OCCC[N+]1=CN(C=C1)C Chemical compound C(C=C)(=O)OCCC[N+]1=CN(C=C1)C YHCFDXGTEQAXQB-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910004611 CdZnTe Inorganic materials 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical group C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- NWGKJDSIEKMTRX-AAZCQSIUSA-N Sorbitan monooleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O NWGKJDSIEKMTRX-AAZCQSIUSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 125000005496 phosphonium group Chemical group 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000001593 sorbitan monooleate Substances 0.000 description 2
- 235000011069 sorbitan monooleate Nutrition 0.000 description 2
- 229940035049 sorbitan monooleate Drugs 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- FYZFRYWTMMVDLR-UHFFFAOYSA-M trimethyl(3-trimethoxysilylpropyl)azanium;chloride Chemical compound [Cl-].CO[Si](OC)(OC)CCC[N+](C)(C)C FYZFRYWTMMVDLR-UHFFFAOYSA-M 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- JFGQHAHJWJBOPD-UHFFFAOYSA-N 3-hydroxy-n-phenylnaphthalene-2-carboxamide Chemical compound OC1=CC2=CC=CC=C2C=C1C(=O)NC1=CC=CC=C1 JFGQHAHJWJBOPD-UHFFFAOYSA-N 0.000 description 1
- GBQYMXVQHATSCC-UHFFFAOYSA-N 3-triethoxysilylpropanenitrile Chemical compound CCO[Si](OCC)(OCC)CCC#N GBQYMXVQHATSCC-UHFFFAOYSA-N 0.000 description 1
- 229920000936 Agarose Polymers 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 1
- 0 C=CC(=O)OCCCn1ccn(C)c1 Chemical compound C=CC(=O)OCCCn1ccn(C)c1 0.000 description 1
- WITWBUJPGJIFEA-UHFFFAOYSA-N CC(=C)C(=O)OCC[N+](C)(C)C.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F Chemical compound CC(=C)C(=O)OCC[N+](C)(C)C.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F WITWBUJPGJIFEA-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- GGMPISPXDJJENY-UHFFFAOYSA-N FC(F)(F)S(=O)(=O)[C](S(=O)(=O)C(F)(F)F)S(=O)(=O)C(F)(F)F Chemical compound FC(F)(F)S(=O)(=O)[C](S(=O)(=O)C(F)(F)F)S(=O)(=O)C(F)(F)F GGMPISPXDJJENY-UHFFFAOYSA-N 0.000 description 1
- 229910005228 Ga2S3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910017414 LaAl Inorganic materials 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- GSBKRFGXEJLVMI-UHFFFAOYSA-N Nervonyl carnitine Chemical compound CCC[N+](C)(C)C GSBKRFGXEJLVMI-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920000388 Polyphosphate Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-O Pyrrolidinium ion Chemical compound C1CC[NH2+]C1 RWRDLPDLKQPQOW-UHFFFAOYSA-O 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- ITDZKTRACGARMR-UHFFFAOYSA-N azane 1,1,1-trifluoro-N-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound N.FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ITDZKTRACGARMR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- MYONAGGJKCJOBT-UHFFFAOYSA-N benzimidazol-2-one Chemical compound C1=CC=CC2=NC(=O)N=C21 MYONAGGJKCJOBT-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000366 colloid method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000013005 condensation curing Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- PPSZHCXTGRHULJ-UHFFFAOYSA-N dioxazine Chemical compound O1ON=CC=C1 PPSZHCXTGRHULJ-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- PXZQEOJJUGGUIB-UHFFFAOYSA-N isoindolin-1-one Chemical compound C1=CC=C2C(=O)NCC2=C1 PXZQEOJJUGGUIB-UHFFFAOYSA-N 0.000 description 1
- GWVMLCQWXVFZCN-UHFFFAOYSA-N isoindoline Chemical compound C1=CC=C2CNCC2=C1 GWVMLCQWXVFZCN-UHFFFAOYSA-N 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- RZRCSGZLARDIGN-UHFFFAOYSA-N n-[bis(dimethylamino)indiganyl]-n-methylmethanamine Chemical compound CN(C)[In](N(C)C)N(C)C RZRCSGZLARDIGN-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229940078552 o-xylene Drugs 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002924 oxiranes Chemical class 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Substances OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000779 poly(divinylbenzene) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920001184 polypeptide Polymers 0.000 description 1
- 239000001205 polyphosphate Substances 0.000 description 1
- 235000011176 polyphosphates Nutrition 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920006295 polythiol Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 102000004196 processed proteins & peptides Human genes 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- FYNROBRQIVCIQF-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole-5,6-dione Chemical compound C1=CN=C2C(=O)C(=O)N=C21 FYNROBRQIVCIQF-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000003340 retarding agent Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004729 solvothermal method Methods 0.000 description 1
- 125000005463 sulfonylimide group Chemical group 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- JOUDBUYBGJYFFP-FOCLMDBBSA-N thioindigo Chemical compound S\1C2=CC=CC=C2C(=O)C/1=C1/C(=O)C2=CC=CC=C2S1 JOUDBUYBGJYFFP-FOCLMDBBSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-N trifluoroacetic acid Substances OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N trifluoromethane acid Natural products FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
- C09K11/701—Chalcogenides
- C09K11/703—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Definitions
- the present invention relates to a phosphor containing particle, and a light emitting device and a phosphor containing sheet using the same.
- a semiconductor nanoparticle phosphor also referred to as a quantum dot
- a quantum size effect is that when a substance is reduced in size, an electron therein is unable to move freely and the electron's energy is only able to assume a specific value rather than any value.
- the semiconductor nanoparticle phosphor which confines an electron therein varies in size, the electron's energy state also varies, and the semiconductor nanoparticle phosphor emits light having a wavelength which is shorter as the semiconductor nanoparticle phosphor is reduced in dimension.
- Such a semiconductor nanoparticle phosphor is of commercial interest for an electron characteristic size-tuneable by the quantum size effect.
- the size-tuneable electron characteristic is able to be used in a variety of applications such as biological labeling, photovoltaic power generation, catalysis, biological image pick-up, LED, general space lighting, and an electron emission display.
- Semiconductor nanoparticle phosphor has a large specific surface area and a high surface activity, and accordingly, it chemically and physically less easily stabilizes. Accordingly, a method for stabilizing a semiconductor nanoparticle phosphor has been proposed.
- Japanese National Patent Publication No. 2013-505347 discloses a plurality of coated primary particles such that each primary particle includes a primary matrix material and a group of semiconductor nanoparticles, each primary particle is individually provided with a layer of a surface coating material, the primary particle has a microbead structure, and the surface coating material includes a polymeric material.
- a plurality of primary particles thus coated is able to reduce reactivity to a surrounding environment and a process performed after the primary particles are produced.
- a conventional art disclosed in Japanese National Patent Publication No. 2013-505347 uses resins such as epoxy, silicone and (meth)acrylate, silica, etc. as the primary matrix material.
- resins such as epoxy, silicone and (meth)acrylate, silica, etc.
- the semiconductor nanoparticle phosphor agglomerates and accordingly, has an impaired optical characteristic or is similarly degraded, and after the semiconductor nanoparticle phosphor is sealed, oxygen passes through the sealing material and moves to a surface of the semiconductor nanoparticle phosphor, and thus causes photooxidation, resulting in a reduced quantum yield.
- Japanese National Patent Publication No. 2013-505347 proposes a method in which a plurality of semiconductor nanoparticle phosphors are previously held in a matrix material such as polymer and glass and the intermediate product has a surface coated to produce a primary particle which is in turn buried in a host LED material such as silicone and acrylate (see Japanese National Patent Publication No. 2013-505347, FIG. 8).
- This method still has a problem, i.e., the primary particle's matrix material is similar to the host LED material, and accordingly, in producing the primary particle the semiconductor nanoparticle phosphor agglomerates resulting in an impaired optical characteristic.
- Preferred embodiments of the present invention provide a phosphor containing particle producible while preventing degradation of a semiconductor nanoparticle phosphor by agglomeration, and a light emitting device and a phosphor containing sheet using the same.
- a phosphor containing particle according to a preferred embodiment of the present invention is characterized by including a semiconductor nanoparticle phosphor and a matrix including a constitutional unit derived from an ionic liquid, the semiconductor nanoparticle phosphor being dispersed in the matrix.
- the matrix used in the phosphor containing particle according to various preferred embodiments of the present invention includes a resin derived from the ionic liquid.
- the ionic liquid used in the phosphor containing particle according to various preferred embodiments of the present invention includes a polymerizable functional group.
- a semiconductor nanoparticle phosphor in the form of a particle dispersed in a matrix including a constitutional unit derived from an ionic liquid (i.e., a phosphor containing particle), such particles are able to be produced while the semiconductor nanoparticle phosphor's agglomeration is prevented, so that a high optical characteristic is able to be maintained, and even after the particles are produced, the semiconductor nanoparticle phosphor's degradation due to moisture and oxygen is able to be reduced.
- a phosphor containing particle is able to be provided which has high light emission efficiency and excellent chemical stability, and is also excellent in handleability.
- the thus obtained phosphor containing particle when produced in a size approximately the same as a currently used phosphor, is able to be used in a form similar to that of a currently commercially used phosphor, and a light emitting device and a phosphor containing sheet, etc. using the same are able to be provided.
- the phosphor containing particle according to a preferred embodiment of the present invention has a particle size within a range of about 100 nm to about 30 ⁇ m.
- the semiconductor nanoparticle phosphor may include a single type of semiconductor nanoparticle phosphor or may include a red fluorescent light emitting semiconductor nanoparticle phosphor and a green fluorescent light emitting semiconductor nanoparticle phosphor.
- the resin used in the phosphor containing particle according to various preferred embodiments of the present invention is crosslinked.
- the phosphor containing particle according to a preferred embodiment of the present invention has an outermost surface including a translucent coating layer.
- a material included in the coating layer is preferably an inorganic material having a band gap equal to or greater than 3.0 eV.
- the phosphor containing particle according to a preferred embodiment of the present invention may include a support to seal the matrix.
- the support includes silica.
- the semiconductor nanoparticle phosphor may have a surface including a polar functional group.
- the support has a hollow capsular structure having pores penetrating from a wall surface into an internal space, or a globular structure having pores extending from a surface inwards.
- the present invention also provides a light emitting device comprising a light source and a wavelength converter in which the phosphor containing particle according to preferred embodiments of the present invention as described above is dispersed in a translucent medium.
- the light emitting device may include a phosphor containing particle in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, and a phosphor containing particle in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
- a phosphor other than the semiconductor nanoparticle phosphor may further be dispersed in the medium.
- the present invention also provides a phosphor containing sheet in which the phosphor containing particle according to a preferred embodiment of the present invention described above is dispersed in a sheet-like translucent medium.
- the phosphor containing sheet according to a preferred embodiment of the present invention may include a phosphor containing particle in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, and a phosphor containing particle in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
- a phosphor other than the semiconductor nanoparticle phosphor may further be dispersed in the medium.
- FIG. 1 schematically shows a phosphor containing particle 1 according to a first embodiment of the present invention.
- FIG. 2 is a cross section of phosphor containing particle 1 shown in FIG. 1 such that it is partially enlarged.
- FIG. 3 is a cross section of phosphor containing particle 1 shown in FIG. 1 such that it is partially enlarged.
- FIG. 4 schematically shows a phosphor containing particle 11 according to a second embodiment of the present invention.
- FIG. 5 schematically shows a phosphor containing particle 21 according to a third embodiment of the present invention.
- FIG. 6 schematically shows a phosphor containing particle 31 according to a fourth embodiment of the present invention.
- FIG. 7 schematically shows a phosphor containing particle 35 according to a fifth embodiment of the present invention.
- FIG. 8 schematically shows a phosphor containing particle 35 ′ according to a fifth embodiment of the present invention.
- FIG. 9 shows one example of an exemplary variation of a support.
- FIG. 10 shows one example of an exemplary variation of the support.
- FIG. 11 schematically shows a light emitting device 41 according to a sixth embodiment of the present invention.
- FIG. 12 schematically shows a light emitting device 51 according to a seventh embodiment of the present invention.
- FIG. 13 schematically shows a light emitting device 61 according to an eighth embodiment of the present invention.
- FIG. 14 shows the light emitting device of the example shown in FIG. 11 such that it is partially enlarged.
- FIG. 15 shows an exemplary variation of the light emitting device shown in FIG. 14 .
- FIG. 16 schematically shows a phosphor containing sheet 71 according to a ninth embodiment of the present invention.
- FIG. 17 schematically shows a phosphor containing sheet 81 according to a tenth embodiment of the present invention.
- FIG. 18 schematically shows a phosphor containing sheet 91 according to an eleventh embodiment of the present invention.
- FIG. 19 is an optical microscopic image obtained when the phosphor containing particle of Example 1 is irradiated with excitation light having a wavelength of 405 nm.
- FIG. 20 shows a cross-sectional SEM analysis result of a hollow silica capsule.
- FIG. 21 shows a SEM analysis result of a support of Example 7.
- FIG. 22 is an optical microscopic image obtained when the phosphor containing particle of Example 7 is irradiated with excitation light having a wavelength of 405 nm.
- FIG. 23 is a cross-sectional SEM image of one example of a support of Example 8.
- FIG. 24 is a cross-sectional SEM image of one example of the support of Example 8.
- FIG. 1 schematically shows a phosphor containing particle (a nanoparticle phosphor element/a microbead) 1 according to a first embodiment of the present invention.
- Phosphor containing particle 1 according to a preferred embodiment of the present invention is characterized by including a semiconductor nanoparticle phosphor 2 and a matrix 3 including a constitutional unit derived from an ionic liquid, semiconductor nanoparticle phosphor 2 being dispersed in matrix 3 .
- the “ionic liquid” used according to preferred embodiments of the present invention is preferably a salt in a molten state even at an ambient temperature (e.g., about 25 degrees centigrade) (ambient temperature molten salt) which is preferably expressed in a general formula (I) below:
- X + is a cation selected from among imidazolium ion, pyridinium ion, phosphonium ion, aliphatic quaternary ammonium ion, pyrrolidinium, and sulfonium.
- aliphatic quaternary ammonium ion is a particularly preferred cation as it is excellently stable thermally and against air and moisture in the atmosphere.
- Y ⁇ is an anion selected from among tetrafluoroboric acid ion, hexafluorophosphoric acid ion, bistrifluoromethyl sulfonyl imide acid ion, perchloric acid ion, tris(trifluoromethylsulfonyl) carbon acid ion, trifluoromethanesulfonic acid ion, trifluoroacetic acid ion, carbonic acid ion, and halogen ion.
- bis trifluoromethyl sulfonyl imide acid ion is a particularly preferred anion as it is excellently stable thermally and against air and moisture in the atmosphere.
- Matrix 3 includes a constitutional unit derived from an ionic liquid, and specifically, it may include an ionic liquid or a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group. Matrix 3 may include another component as long as matrix 3 includes an ionic liquid or a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group as a major component (e.g., by 80 mass % or more).
- the ionic liquid is able to be an ionic liquid including a polymerizable functional group or an ionic liquid excluding a polymerizable functional group.
- the ionic liquid excluding a polymerizable functional group for example includes N,N,N-trimethyl-N-propyl ammonium bis(trifluoromethane sulfonyl) imide, N,N-dimethyl-N-methyl-2-(2-methoxy ethyl) ammonium bis(trifluoromethane sulfonyl)imide (DEME), and the like.
- the ionic liquid used in phosphor containing particle 1 includes a polymerizable functional group.
- the ionic liquid including the polymerizable functional group By including the ionic liquid including the polymerizable functional group, the ionic liquid functioning as a dispersion medium for the semiconductor nanoparticle phosphor is able to be polymerized as it is in the presence of the polymerizable functional group.
- the resin including the constitutional unit derived from the ionic liquid including the polymerizable functional group by polymerizing the ionic liquid including the polymerizable functional group with the semiconductor nanoparticle phosphor being dispersed, agglomeration which has occurred in solidification of the resin in which the semiconductor nanoparticle phosphor has been dispersed is significantly reduced or prevented.
- the semiconductor nanoparticle phosphor is dispersed in the resin including the constitutional unit derived from the ionic liquid including the polymerizable functional group, so that the semiconductor nanoparticle phosphor is electrostatically stabilized, the semiconductor nanoparticle phosphor is reliably and securely protected, the surface of the semiconductor nanoparticle phosphor is protected against the effects of air and moisture, and a light emitting device high in efficiency in light emission is realized.
- the polymerizable functional group of the ionic liquid is not particularly restricted.
- a (meth)acrylic acid ester group (a (meth)acryloyloxy group) is preferred because the semiconductor nanoparticle phosphor is able to be solidified with a dispersed state being maintained from a state of a liquid in which stable dispersion is achieved.
- suitable examples of the ionic liquid including such a (meth)acrylic acid ester group include 2-(methacryloyloxy)-ethyltrimethylammonium bis(trifluoromethanesulfonyl) imide (MOE-200T) shown in a formula below:
- the ionic liquid including the polymerizable functional group as described above is able to be obtained by introducing a polymerizable functional group into a conventionally known appropriate ionic liquid with a conventionally known appropriate method, however, a commercially available product may naturally be used.
- Suitable conditions in accordance with a type or an amount of an ionic liquid including a polymerizable functional group to be used are selected as appropriate as conditions for a temperature and a time period for polymerization of the ionic liquid including the polymerizable functional group while the semiconductor nanoparticle phosphor is dispersed, and the conditions are not particularly restricted.
- 2-(methacryloyloxy)-ethyltrimethylammonium bis(trifluoromethanesulfonyl) imide may preferably be used as the ionic liquid including the polymerizable functional group
- polymerization is able to suitably be achieved, for example, under a condition of a temperature from 60 to 100 degrees centigrade for 1 to 10 hours.
- polymerization is able to be suitably achieved, for example, under a condition of a temperature from about 60 degrees centigrade to about 150 degrees centigrade for about 1 hour to about 10 hours.
- a catalyst to be used is not particularly restricted, and for example, conventionally known azobisisobutyronitrile or dimethyl 2,2′-azobis(2-methylpropionate) is able to be used. Of these, for rapid progress of polymerization, azobisisobutyronitrile is preferably used as a catalyst.
- Semiconductor nanoparticle phosphor 2 in phosphor containing particle 1 is a single phosphor particles without scattering of visible light, and a conventionally known appropriate semiconductor nanoparticle phosphor is able to be used without being particularly restricted.
- an emission wavelength is able to be precisely controlled based on control of particle size and control of composition.
- FIG. 2 is a cross section of phosphor containing particle 1 shown in FIG. 1 such that it is partially enlarged.
- semiconductor nanoparticle phosphor 2 includes a nanoparticle core 2 a including a compound semiconductor, a shell layer 2 b covering nanoparticle core 2 a , and an organic modifying group 6 bonded to an external surface of shell layer 2 b .
- organic modifying group 6 includes a polar functional group.
- Nanoparticle core 2 a includes a compound semiconductor.
- the compound semiconductor included in nanoparticle core 2 a has a composition such as InN, InP, InAs, InSb, InBi, InGaN, InGaP, GaP, AlInN, AlInP, AlGaInN, AlGaInP, CdS, CdSe, CdTe, CdZnS, CdZnSe, CdZnTe, CdZnSSe, CdZnSeTe, In 2 S 3 , In 2 Se 3 , Ga 2 Se 3 , In 2 Te 3 , Ga 2 Te 3 , CuInS 2 , CuInSe 2 , CuInTe 2 for example.
- the compound semiconductor having such a composition has a bandgap energy which emits visible light of a wavelength of about 380 nm to about 780 nm. Accordingly, by controlling particles' diameter and mixed crystal ratio, a nanoparticle core which is able to emit any visible light is able to be formed.
- Nanoparticle core 2 a preferably includes a semiconductor of InP, GaP, or CdSe. This is because InP, GaP, and CdSe are composed of a small number of materials and thus easily produced, and in addition, they are materials which present high quantum yields, and present high light emission efficiency when irradiated with LED light. Note that quantum yield as referred to herein is a ratio of the number of photons emitting light as fluorescence relative to the number of absorbed photons.
- Shell layer 2 b includes a compound semiconductor formed succeeding a crystal structure of nanoparticle core 2 a .
- Shell layer 2 b is a layer formed by growing a semiconductor crystal on a surface of nanoparticle core 2 a , and nanoparticle core 2 a and shell layer 2 b are bonded by a chemical bond.
- shell layer 2 b is at least one selected from the group consisting of GaAs, GaP, GaN, GaSb, InAs, InP, InN, InSb, AlAs, AlP, AlSb, AlN, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, CdZnS, CdZnSe, CdZnTe, CdZnSSe, CdZnSeTe, In 2 O 3 , Ga 2 O 3 , In 2 S 3 , Ga 2 S 3 , and ZrO 2 , for example.
- shell layer 2 b has a thickness of about 0.1 nm to about 10 nm.
- shell layer 2 b may have a multilayer structure including a plurality of shell layers.
- AlS, APbS, PbSe, Si, Ge, MgS, MgSe, MgTe, etc. are also included.
- the semiconductor nanoparticle phosphor may be a two-component core type, three-component core type, four-component core type, core-shell type or core multishell type, doped or slanted semiconductor nanoparticle phosphor known to those skilled in the art.
- FIG. 1 shows a plurality of semiconductor nanoparticle phosphors of a single type dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
- Shell layer 2 b has an external surface bonded to organic modifying group 6 .
- Organic modifying group 6 is formed by causing a modifying organic compound to react to bond to the external surface of shell layer 2 b .
- a dangling bond of a surface of shell layer 2 b is capped by organic modifying group 6 and a surface defect of shell layer 2 b is significantly reduced or prevented, and nanoparticle core 2 a is thus improved in light emission efficiency.
- Semiconductor nanoparticle phosphor 2 that has a surface with organic modifying group 6 is able to prevent semiconductor nanoparticle phosphors 2 from agglomerating together. This helps to disperse the semiconductor nanoparticle phosphor in matrix 3 including a constitutional unit derived from an ionic liquid.
- the modifying organic compound has a polar functional group at a terminal thereof.
- the polar functional group is disposed on a surface of semiconductor nanoparticle phosphor 2 .
- semiconductor nanoparticle phosphor 2 has a surface having a polarity, and semiconductor nanoparticle phosphor 2 is thus able to disperse in matrix 3 including a constitutional unit derived from an ionic liquid.
- Examples of the polar functional group include a carboxyl group, a hydroxyl group, a thiol group, a cyano group, a nitro group, an ammonium group, an imidazolium group, a sulfonium group, a pyridinium group, a pyrrolidinium group, a phosphonium group, and the like.
- the polar functional group in the modifying organic compound is an ionic functional group.
- the ionic functional group is high in polarity, and the semiconductor nanoparticle phosphor having a surface with the ionic functional group is significantly excellent in dispersibility in a matrix including a constitutional unit derived from an ionic liquid.
- an electrostatic effect by the ionic liquid's positive and negative charges significantly enhances the semiconductor nanoparticle phosphor's stability.
- the ionic liquid will be described later.
- Examples of the ionic functional group include an ammonium group, an imidazolium group, a sulfonium group, a pyridinium group, a pyrrolidinium group, a phosphonium group, and the like.
- the modifying organic compound's remaining structure is not particularly limited as long as it has a polar functional group at a terminal thereof.
- the semiconductor nanoparticle phosphor may be a single type thereof or two or more types thereof in combination.
- the shape of the semiconductor nanoparticle phosphor is not particularly restricted and a semiconductor nanoparticle phosphor including a conventionally known appropriate shape such as a globular shape, a rod shape, or a wire shape, for example, is able to be used without particularly being restricted.
- a globular semiconductor nanoparticle phosphor is preferably used, for example.
- the particle size of the semiconductor nanoparticle phosphor is able to be selected as appropriate in accordance with a source material and a desired emission wavelength, without being particularly restricted, however, it is preferably within a range from about 1 nm to about 20 nm and more preferably within a range from about 2 nm to about 5 nm, for example.
- the semiconductor nanoparticle phosphor has a particle size smaller than about 1 nm, a ratio of a surface area to a volume tends to increase, a surface defect tends to be dominant, and an effect tends to be lowered.
- the semiconductor nanoparticle phosphor has a particle size exceeding about 20 nm, a state of dispersion tends to be low and agglomeration and settling tend to occur.
- the particle size refers, for example, to an average particle size measured with a particle size distribution analyzer or to a size of a particle observed with an electron microscope.
- the particle size refers, for example, to a length of a minor axis and a major axis measured with an electron microscope.
- the semiconductor nanoparticle phosphor has a wire shape
- the particle size refers, for example, to a length of a minor axis and a major axis measured with an electron microscope.
- the content of the semiconductor nanoparticle phosphor (or a total amount thereof when two or more types of semiconductor nanoparticle phosphors are used as will be described later) is not particularly restricted, the content is preferably within a range from about 0.001 to about 50 parts by weight and more preferably within a range from about 0.01 to about 20 parts by weight, for example, with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group.
- the content of the semiconductor nanoparticle phosphor is smaller than about 0.001 part by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group, light emission from the semiconductor nanoparticle phosphor tends to be excessively weak.
- the content of the semiconductor nanoparticle phosphor exceeds about 50 parts by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group, uniform dispersion in the ionic liquid including the polymerizable functional group tends to be difficult.
- FIG. 3 to specially describe an effect obtained by dispersing semiconductor nanoparticle phosphor 2 in matrix 3 including a constitutional unit derived from an ionic liquid.
- Semiconductor nanoparticle phosphor 2 in matrix 3 is able to be satisfactorily dispersed in matrix 3 by an electrostatic effect of a positive charge 8 and a negative charge 9 attributed to the ionic liquid in matrix 3 .
- the electrostatic effect attributed to the ionic liquid in matrix 3 stabilizes organic modifying group 6 of the surface of the semiconductor nanoparticle phosphor and significantly reduces or prevents a dangling bond caused by separation of organic modifying group 6 from the surface of the semiconductor nanoparticle phosphor, and is thus able to prevent the semiconductor nanoparticle phosphor from having a reduced quantum yield.
- organic modifying group 6 includes a polar functional group, an ionic functional group, etc. and the functional groups are present on a surface of the semiconductor nanoparticle phosphor, an electrostatic interaction between electric charge 7 included in these functional groups and positive charge 8 and negative charge 9 derived from the ionic liquid further enhances the semiconductor nanoparticle phosphor's stability.
- the phosphor containing particle according to a preferred embodiment of the present invention has an ion that configures an ionic liquid coordinated on a surface of the semiconductor nanoparticle phosphor to stabilize nanoparticles and thus allows high light emission efficiency. Furthermore, as the semiconductor nanoparticle phosphor is dispersed in a matrix including a constitutional unit derived from an ionic liquid including a polymerizable functional group which has a low oxygen and moisture permeability, particles are able to be produced while the semiconductor nanoparticle phosphor's agglomeration is prevented, so that a high optical characteristic is able to be maintained, and even after the particles are produced, the semiconductor nanoparticle phosphor's degradation due to moisture and oxygen is able to be reduced. Thus, when the semiconductor nanoparticle phosphor is excited and thus caused to emit light, it is less likely to be photooxidized and thus has an excellent chemical stability.
- the matrix including the constitutional unit derived from the ionic liquid including the polymerizable functional group with the semiconductor nanoparticle phosphor dispersed therein may be formed into particles in any method, however, the polymer matrix is able to be physically crushed to have a desired size to suitably produce the particles.
- the phosphor containing particle according to preferred embodiments of the present invention may have conventionally known appropriate shapes such as a globe, a rod and a wire, however, preferably it is globular, spherical in particular, in terms of easiness in controlling a light emission characteristic by controlling a shape.
- the phosphor containing particle according to preferred embodiments of the present invention is not particularly limited in particle size, however, a range of about 50 nm to about 2 mm is preferable, a range of about 100 nm to about 30 ⁇ m is more preferable, and a range of about 1 ⁇ m to about 20 ⁇ m is particularly preferable.
- the phosphor containing particle when the phosphor containing particle has a particle size less than 100 nm, the phosphor containing particle will have a large surface area/volume ratio per particle and has a tendency to have a large loss due to scattering of excitation light, whereas when the phosphor containing particle has a particle size exceeding 30 ⁇ m, it has a tendency to be difficult to disperse in a translucent medium through a process similar to that for a conventional phosphor.
- the phosphor containing particle having a particle size within the above range is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process, and a light emitting device and a phosphor containing sheet, etc. using the same are able to be provided.
- the phosphor containing particle's particle size indicates a size of the particle as observed with an optical microscope or a scanning electron microscope (SEM), or a value as measured with a particle size distribution measurement device.
- FIG. 4 schematically shows a phosphor containing particle (a nanoparticle phosphor element/a microbead) 11 according to a second embodiment of the present invention. Note that in FIG. 4 , any portion having a configuration similar to that of phosphor containing particle 1 according to the first embodiment shown in FIG. 1 is identically denoted and will not be described.
- Phosphor containing particle 11 according to the second embodiment shown in FIG. 4 includes a semiconductor nanoparticle phosphor including a red fluorescent light emitting semiconductor nanoparticle phosphor 12 and a green fluorescent light emitting semiconductor nanoparticle phosphor 13 .
- Phosphor containing particle 1 according to the first embodiment shown in FIG. 1 includes semiconductor nanoparticle phosphor 2 of only a single type and thus having a single fluorescent wavelength
- phosphor containing particle 11 according to the second embodiment shown in FIG. 4 includes a plurality of semiconductor nanoparticle phosphors of a type having a fluorescent wavelength and a plurality of semiconductor nanoparticle phosphors of a different type having a different fluorescent wavelength.
- FIG. 4 shows a case where a plurality of red fluorescent light emitting semiconductor nanoparticle phosphors and a plurality of green fluorescent light emitting semiconductor nanoparticle phosphors for a total of two types of semiconductor nanoparticle phosphors are used, still another type of semiconductor nanoparticle phosphor may be included and thus three or more types of semiconductor nanoparticle phosphors may be included.
- the semiconductor nanoparticle phosphor's content (or a total amount thereof when two or more types of semiconductor nanoparticle phosphors are used) is not particularly limited, however, it is preferably within a range of 0.001 to 50 parts by weight relative to 100 parts by weight of the ionic liquid including the polymerizable functional group, more preferably within a range of 0.01 to 20 parts by weight.
- the semiconductor nanoparticle phosphor's content is less than 0.001 parts by weight relative to 100 parts by weight of the ionic liquid including the polymerizable functional group, light emission from the semiconductor nanoparticle phosphor has a tendency to be too week, whereas when the semiconductor nanoparticle phosphor's content exceeds 50 parts by weight relative to 100 parts by weight of the ionic liquid including the polymerizable functional group, the semiconductor nanoparticle phosphor has tendency to be difficult to disperse uniformly in the ionic liquid including the polymerizable functional group.
- the mixing ratio of the red fluorescent light emitting semiconductor nanoparticle phosphor and the green fluorescent light emitting semiconductor nanoparticle phosphor is not particularly limited, in a weight ratio the green fluorescent light emitting semiconductor nanoparticle phosphor is preferably within a range from about 10 to about 1000 and more preferably within a range from about 20 to about 500, with the red fluorescent light emitting semiconductor nanoparticle phosphor being defined as 100 .
- a weight ratio of the green fluorescent light emitting semiconductor nanoparticle phosphor is lower than about 10 with the red fluorescent light emitting semiconductor nanoparticle phosphor being defined as 100 , a color of light emission tends to significantly deviate from white and to be closer to red due to a difference in light emission intensity between red and green.
- the weight ratio of the green fluorescent light emitting semiconductor nanoparticle phosphor exceeds 1000 with the red fluorescent light emitting semiconductor nanoparticle phosphor being defined as 100 , a color of light emission tends to significantly deviate from white and to be closer to green due to a difference in light emission intensity between red and green.
- FIG. 5 schematically shows a phosphor containing particle (a nanoparticle phosphor element/a microbead) 21 according to a third embodiment of the present invention.
- Phosphor containing particle 21 according to the third embodiment shown in FIG. 5 is different from phosphor containing particle 1 according to the first embodiment shown in FIG. 1 in that a resin 22 is crosslinked (i.e., the resin in phosphor containing particle 1 according to the first embodiment shown in FIG. 1 is not crosslinked).
- resin 22 derived from an ionic liquid including a polymerizable functional group, that has a cross-linking agent added thereto By using resin 22 derived from an ionic liquid including a polymerizable functional group, that has a cross-linking agent added thereto, when the ionic liquid including the polymerizable functional group is polymerized, stronger solidification is able to be achieved and the wavelength converter's stability is able to be advantageously improved. Note that, that resin 22 is crosslinked is able to be confirmed by measurement by X-ray photoelectron spectroscopy (XPS).
- XPS X-ray photoelectron spectroscopy
- cross-linking agent may be a conventionally known, appropriate cross-linking agent and is not particularly limited, examples of the cross-linking agent include diethyleneglycol dimethacrylate and 1,1,1-trimethylol propane triacrylate. Of these, for such a reason that there are many cross-linking sites and secure polymerization is achieved, 1,1,1-trimethylol propane triacrylate is preferably used as the cross-linking agent.
- an amount of addition is not particularly restricted either, however, an amount of addition is preferably within a range from 1 to 50 parts by weight and more preferably within a range from 1 to 30 parts by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group.
- an amount of addition of the cross-linking agent is smaller than 1 part by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group, a cross-linking structure does not tend to develop and strength of the resin tends to be weak.
- an amount of addition of the cross-linking agent exceeds 50 parts by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group, the semiconductor nanoparticle phosphor does not tend to be dispersed in a stable manner.
- FIG. 5 shows a case where, as well as in FIG. 1 , a plurality of semiconductor nanoparticle phosphors of a single type are used, in place of this, as has been shown in FIG. 4 , a plurality of red fluorescent light emitting semiconductor nanoparticle phosphors and a plurality of green fluorescent light emitting semiconductor nanoparticle phosphors for a total of two types of semiconductor nanoparticle phosphors may be used, or still another type of semiconductor nanoparticle phosphor may be included and thus three or more types of semiconductor nanoparticle phosphors may be included.
- FIG. 6 schematically shows a phosphor containing particle (a nanoparticle phosphor element/a microbead) 31 according to a fourth embodiment of the present invention.
- Phosphor containing particle 31 according to the fourth embodiment shown in FIG. 6 is different from phosphor containing particle 1 according to the first embodiment shown in FIG. 1 in that the former has an outermost surface including a translucent coating layer 32 . Having the outermost surface including a translucent coating layer 32 is able to reduce oxygen and moisture permeability and is consequently able to significantly reduce or prevent the semiconductor nanoparticle phosphor's photooxidation and hence degradation and further enhance its chemical stability.
- Coating layer 32 is not limited in material as long as it is translucent, however, a metal oxide, a silica-based material, or a similar translucent inorganic material is preferred. Furthermore, among these materials, coating layer 32 preferably includes an inorganic material having a band gap of 3.0 eV or more.
- the inorganic material of a metal oxide having a band gap of 3.0 eV or more and absorbing ultraviolet rays is exemplified for example by SiO 2 , ZnO, TiO 2 , CeO 2 , SnO 2 , ZrO 2 , Al 2 O 3 , ZnO:Mg, etc.
- ZnO, TiO 2 , Al 2 O 3 , CeO 2 , and SnO 2 have a band gap close to 3.0 eV, and are thus able to absorb ultraviolet rays in a wide range (up to a range of ultraviolet rays close to visible light).
- SiO 2 , ZrO 2 , and ZnO:Mg have a band gap considerably larger than 3.0 eV, and accordingly, absorb only ultraviolet rays having a considerably short wavelength and transmit ultraviolet rays of a range close to visible light.
- Having an outermost surface including coating layer 32 including an inorganic material having a band gap of 3.0 eV or more is able to significantly reduce or prevent degradation by ultraviolet rays of the semiconductor nanoparticle phosphor and the resin including the constitutional unit derived from the ionic liquid including the polymerizable functional group and consequently enhance chemical stability. Note that in the present invention it is better if the inorganic material is an inorganic crystal.
- FIGS. 7 and 8 schematically show phosphor containing particles (a nanoparticle phosphor element/a microbead) 35 , 35 ′ according to a fifth embodiment of the present invention. Note that in FIGS. 7 and 8 , any portion having a configuration similar to that of phosphor containing particle 1 according to the first embodiment shown in FIG. 1 is identically denoted and will not be described.
- the phosphor containing particle according to a preferred embodiment of the present invention may include supports 38 , 38 ′ to seal the matrix.
- Supports 38 , 38 ′ coating matrix 3 are able to significantly reduce or prevent oxygen and moisture penetration into the matrix. This is able to significantly reduce or prevent the semiconductor nanoparticle phosphor's degradation caused by oxygen and moisture and hence the semiconductor nanoparticle phosphor's degradation in efficiency.
- the support preferably has a thickness for example of about 0.5 nm to about 0.5 mm, more preferably about 10 nm to about 100 ⁇ m.
- the thickness of the support is able to be measured using a scanning electron microscope or a transmission electron microscope or the like.
- the support is not particularly limited in material as long as it is formed of a material which shields oxygen, moisture etc., and an inorganic material, a polymeric material, etc. are able to be used.
- An inorganic material excellently shields oxygen, moisture, etc.
- examples of the inorganic material include silica, metal oxide, metal nitride, etc.
- the polymeric material has flexibility, and accordingly, when it is used as a material for the support, the phosphor containing particle is improved in shock resistance. Furthermore, when the support is formed on the matrix, the polymeric material is able to be formed under a milder condition than the inorganic material is, and a processing damage to the ionic liquid and semiconductor nanoparticle phosphor in the matrix is able to be significantly reduced or prevented.
- the polymeric material is able to be acrylate polymer, epoxide, polyamide, polyimide, polyester, polycarbonate, polythioether, polyacrylonitrile, polydien, polystyrene polybutadiene copolymer, parylene, silica-acrylate hybrid, polyetheretherketone, polyvinylidene fluoride, polyvinylidene chloride, polydivinylbenzene, polyethylene, polypropylene, polyethylene terephthalate, polyisobutylene, polyisoprene, cellulose derivative, polytetrafluoroethylene, etc.
- support 38 ′ is able to be a multi-layered structure including a first support 33 and a second support 34 . This further enhances oxygen and moisture shieldability.
- the number of layers is not particularly limited as long as it is two layers or more, and each layer's material is also not particularly limited as long as it has oxygen and moisture shieldability.
- FIG. 7 shows support 38 having a hollow globular structure entirely covering matrix 3 including the constitutional unit derived from the ionic liquid
- the support's shape is not particularly limited as long as it is able to hold matrix 3 therein.
- it is able to be a support 36 having a hollow capsular structure having pores penetrating from a wall surface into an internal space, as shown in FIG. 9 , a globular support 37 having pores extending from a surface inwards, as shown in FIG. 10 , etc.
- These supports preferably have a pore diameter of about 20 nm or more and about 10 ⁇ m or less, more preferably about 100 nm or more and about 10 ⁇ m or less.
- a pore diameter of 10 ⁇ m or less even when a liquid matrix is sealed inside the support, flowing of the matrix out of the support is able to be significantly reduced or prevented. Furthermore, when the pore diameter is in said range, then, for example in a method in which a support such as a hollow capsule having pores is previously produced and subsequently a matrix having a semiconductor nanoparticle phosphor dispersed therein is introduced into the support to produce a nanoparticle phosphor element for producing a phosphor containing particle, the matrix having the semiconductor nanoparticle phosphor dispersed therein is able to be efficiently introduced into the support such as the hollow capsule having pores.
- a pore diameter of 20 nm or more is larger than any semiconductor nanoparticle phosphor having a particle size of about 1 to about 20 nm preferred for the semiconductor nanoparticle phosphor and the semiconductor nanoparticle phosphor is able to easily pass through the pores, and a pore diameter of 100 nm or more allows the ionic liquid to reach a depth of penetration equivalent to 30 ⁇ m, which is a preferred particle size of the phosphor containing particle, in a short period of time of about only 0.1 second.
- Lukas-Washburn equation is represented as below, where 1 represents a depth of penetration of a liquid, R represents a radius of a capillary tube, ⁇ represents a surface tension of the liquid, ⁇ represents a contact angle of the liquid and the capillary tube, ⁇ represents a coefficient of viscosity of the liquid, and t represents time.
- the support has a surface with an opening, which is able to be sealed after the matrix is sealed in the support.
- Phosphor containing particle 35 of the example shown in FIG. 7 is able to be produced using an existing capsule production method by coating the nanoparticle phosphor and the matrix with the support, for example.
- a specific example of the production method is indicated below.
- the method of producing semiconductor nanoparticle phosphor 2 is not particularly limited, and may be any production method.
- a chemical synthesis method is used as the method of producing semiconductor nanoparticle phosphor 2 as the method is a simple and is of a low cost.
- a chemical synthesis method a plurality of starting materials including elements to constitute a substance to be produced are able to be dispersed in a medium and then made to react to obtain the substance to be produced.
- Such a chemical synthesis method for example includes a sol gel method (a colloid method), a hot soap method, an inverted micelle method, a solvothermal method, a molecular precursor method, a hydrothermal synthesis method, a flux method, etc.
- the hot soap method is used as it is able to suitably produce nanoparticle core 2 a including a compound semiconductor material.
- an example of the method of producing semiconductor nanoparticle phosphor 2 by the hot soap method will be indicated.
- nanoparticle core 2 a is synthesized in liquid phase.
- nanoparticle core 2 a including InN is produced, 1-octadecene (a synthesizing solvent) is introduced into a flask or the like and tris(dimethylamino) indium and hexadecanethiol (HDT) are mixed together. The liquid mixture is then agitated sufficiently and then made to react at 180-500 degrees centigrade.
- nanoparticle core 2 a including InN is obtained, and nanoparticle core 2 a thus obtained has an external surface with HDT boded thereto. Note that HDT may be added after shell layer 2 b is grown.
- the synthesizing solvent used in the hot soap method is a compound solution including a carbon atom and a hydrogen atom (hereinafter referred to as a “hydrocarbon-based solvent”).
- a hydrocarbon-based solvent is for example n-pentane, n-hexane, n-heptane, n-octane, cyclopentane, cyclohexane, cycloheptane, benzene, toluene, o-xylene, m-xylene, p-xylene or the like.
- nanoparticle core 2 a having a larger particle size. Accordingly, the size of nanoparticle core 2 a is controllable to be a desired size by liquid phase synthesis while monitoring a particle size by photoluminescence, light absorption, dynamic light scattering or the like.
- a reaction reagent which is a source material for shell layer 2 b is added to the solution containing nanoparticle core 2 a , and made to undergo a pyrogenetic reaction.
- a starting material for the semiconductor nanoparticle phosphor is obtained.
- the starting material for the semiconductor nanoparticle phosphor thus obtained has nanoparticle core 2 a with an external surface covered with shell layer 2 b , and has HDT bonded to an external surface of shell layer 2 b.
- a modifying organic compound is added to the solution containing the starting material for the semiconductor nanoparticle phosphor, and made to react at a temperature of from room temperature to 300 degrees centigrade. This resolves the bond of the external surface of shell layer 2 b and HDT, and the modifying organic compound is bonded to the external surface of shell layer 2 b to form modifying organic modifying group 6 .
- semiconductor nanoparticle phosphor 2 is obtained.
- the modifying organic compound may be added instead of HDT.
- the modifying organic compound may not be added after shell layer 2 b is formed.
- Semiconductor nanoparticle phosphor 2 thus obtained is dispersed in a matrix including an ionic liquid as a major component.
- the volume ratio of the semiconductor nanoparticle phosphor to the resin is able to have a value depending on how the light emitting device is used, and preferably it is 0.000001 or more and 10 or less for example. According to this, the semiconductor nanoparticle phosphor is less likely agglomerate and is dispersible in the resin more uniformly.
- matrix 3 having semiconductor nanoparticle phosphor 2 dispersed therein is introduced into a solution including a material for the support and thereafter a process for precipitating the support's material is performed.
- a phosphor containing particle in which matrix 3 has a surface covered with the support is able to be obtained.
- matrix 3 having semiconductor nanoparticle phosphor 2 dispersed therein that for example has undergone a process using a homogenizer etc. and thus been emulsified (or made fine) is able to be introduced into the solution including the material for the support.
- matrix 3 having semiconductor nanoparticle phosphor 2 dispersed therein is not subjected to the emulsification process and is instead able to be directly introduced via a syringe etc. into the solution including the material for the support.
- the thickness of the support is controllable by the period of time, temperature and pH of the process for precipitating the support's material, the concentration of the support's material, etc.
- the ionic liquid in matrix 3 maintains a liquid state.
- a condensation reaction By causing the ionic liquid to undergo a condensation reaction and curing and resinifying (or solidifying) it to form a resin including a constitutional unit derived from the ionic liquid, a phosphor containing particle in which matrix 3 includes the resin including the constitutional unit derived from the ionic liquid is able to be obtained.
- the curing can be done by a photo-curing method exposing the intermediate product to ultraviolet rays and thus curing it, a thermosetting method applying heat to the intermediate product and thus curing it, etc.
- the phosphor containing particle is also be able to be produced for example in such a manner that a hollow capsule having pores is previously produced and subsequently a matrix having a semiconductor nanoparticle phosphor dispersed therein is introduced into the hollow capsule, and the ionic liquid is subjected to a curing process if necessary.
- the matrix having the semiconductor nanoparticle phosphor dispersed therein is introduced into the hollow capsule, so that the phosphor containing particle is able to be produced without a hollow capsule production process giving a processing damage to the semiconductor nanoparticle phosphor or the matrix having the semiconductor nanoparticle phosphor dispersed therein.
- FIG. 11 schematically shows a light emitting device 41 according to a sixth embodiment of the present invention.
- a preferred embodiment of the present invention also provides a light emitting device (an LED package) 41 including a light source 42 and a wavelength converter in which phosphor containing particle 1 according to preferred embodiments of the present invention as described above is dispersed in a translucent medium 43 .
- the phosphor containing particle according to a preferred embodiment of the present invention is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process.
- components other than phosphor containing particle 1 i.e., light source 42 , translucent medium 43 , a frame body 44 , a lead wire 45 , etc. are not particularly limited and are able to be conventionally known, appropriate components.
- FIG. 11 shows a case where phosphor containing particle 1 according to the first embodiment shown in FIG. 1 is used, this is not exclusive, and phosphor containing particles 11 , 21 , 31 , 35 and 35 ′ according to the second to fifth embodiments shown in FIG. 4 to FIG. 8 may be used or three or more types of semiconductor nanoparticle phosphors may be included.
- the light source is not particularly limited and is able to be a light emitting diode (LED), a laser diode (LD), etc.
- the translucent medium for sealing the light source and the phosphor containing particle is not particularly limited, however, a glass material or a macromolecular material is preferably used.
- a glass material tetramethoxy silane (TMOS), tetraethoxysilane (TEOS), tetrapropoxysilane, tetrabutoxysilane, etc. are able to be used for example.
- acrylic resin such as polymethylmethacrylate (PMMA), epoxy resin including bisphenol A and epichlorohydrin, etc.
- MOE-200T (2-(methacryloyloxy)-ethyltrimethyl ammonium bis(trifluoromethane sulfonyl)imide
- epoxy, silicone and (meth)acrylate, silica glass, silica gel, siloxane, sol-gel, hydrogel, agarose, cellulose, epoxy, polyether, polyethylene, polyvinyl, polydiacetylene, polyphenylene vinylene, polystyrene, polypyrrole, polyimide, polyimidazole, polysulfone, polythiophene, polyphosphate, poly(meth)acrylate, polyacrylamide, polypeptide, polysaccharide, or a combination thereof may be used as the translucent medium.
- the volume ratio of the phosphor containing particle to the medium is able to have a value depending on how the light emitting device is used, and preferably it is 0.000001 or more and 10 or less for example.
- the volume ratio of the semiconductor nanoparticle phosphor to the medium is 0.2 or less.
- the volume ratio of 0.2 or less allows the light emitting device to have high translucency.
- the volume ratio of the nanoparticle phosphor to the medium is 0.00001 or more.
- the volume ratio of 0.00001 or more allows the light emitting device to emit a large quantity of light.
- the medium contains preferably 80% by volume or more, more preferably 90% by volume or more of the glass material or macromolecular material.
- a highly transparent or highly efficiently light emitting device is able to be provided
- the matrix contains 90% by volume or more of the material
- a further highly transparent or further highly efficiently light emitting device is able to be provided.
- What type of phosphor containing particle and what type of medium are combined is not particularly limited, and is able to be selected depending on how the light emitting device is used.
- FIG. 12 schematically shows a light emitting device 51 according to a seventh embodiment of the present invention. Note that in FIG. 12 , any portion having a configuration similar to that of light emitting device 41 according to the sixth embodiment shown in FIG. 11 is identically denoted and will not be described. Light emitting device 51 according to the seventh embodiment shown in FIG. 12 is different from light emitting device 41 according to the sixth embodiment shown in FIG.
- the former includes a phosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, and a phosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
- the phosphor containing particle according to a preferred embodiment of the present invention is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process.
- light emitting device 51 according to the seventh embodiment by producing a light emitting device in a process similar to that for a conventional phosphor, and furthermore, using a phosphor containing particle including semiconductor nanoparticle phosphors having different wavelengths, a light emitting device which emits light in a desired color is able to be produced.
- phosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group and phosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group are used in combination, a light emitting device exhibiting white light emission of high color reproducibility is able to be obtained. Therefore, a light emitting diode (LED) which emits blue light and a laser diode (LD) which emits blue light are able to be suitably used.
- LED light emitting diode
- LD laser diode
- the mixing ratio of phosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group and phosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group is not particularly limited, in a weight ratio, phosphor containing particle 53 is preferably within a range from about 10 to about 1000 and more preferably within a range from about 20 to about 500, with phosphor containing particle 52 being defined as 100 .
- FIG. 13 schematically shows a light emitting device 61 according to an eighth embodiment of the present invention.
- Light emitting device 61 according to the eighth embodiment shown in FIG. 13 is different from light emitting device 41 according to the sixth embodiment shown in FIG. 11 in that in a medium 43 , phosphor containing particle 1 according to a preferred embodiment of the present invention and in addition thereto a phosphor 62 other than the semiconductor nanoparticle phosphor (a phosphor of a conventional type) are dispersed.
- a phosphor containing particle according to a preferred embodiment of the present invention and a phosphor of a conventional type may be combined together to provide a light emitting device which emits light in a desired color.
- Such a phosphor 62 of a conventionally type for example includes ⁇ -sialon phosphor, ⁇ -sialon phosphor, JEM blue phosphor (LaAl(Si 6-z Al z ) N 10-z O z ), a ⁇ -AlON phosphor or a similar rare earth activated oxynitride phosphor, a YAG:Ce based phosphor or a similar oxide phosphor, a CASN phosphor (CaAlSiN 3 ) or a similar nitride phosphor or a similar inorganic phosphor, a soluble azo pigment, an insoluble azo pigment, a benzimidazolone pigment, a ⁇ naphthol pigment, a naphthol AS pigment, a condensed azo pigment or a similar azo based pigment, a phthalocyanine pigment, a quinacridone pigment, a perylene pigment, an isoindolinone pigment
- the mixing ratio of phosphor containing particle 1 and the phosphor of the conventionally type is not particularly limited, either, and although depending on the type of the semiconductor nanoparticle phosphor used and that of the phosphor of the conventionally type used, when the semiconductor nanoparticle phosphor included in the phosphor containing particle is CdSe and the phosphor of the conventionally type is a ⁇ -sialon phosphor, then, in a weight ratio, the phosphor of the conventionally type is preferably within a range from about 10 to about 1000 and more preferably within a range from about 20 to about 500, with the phosphor containing particle being defined as 100 .
- FIG. 13 shows a case where phosphor containing particle 1 according to the first embodiment shown in FIG. 1 is used, this is not exclusive, and phosphor containing particles 11 , 21 , 31 , 35 and 35 ′ according to the second to fifth embodiments shown in FIG. 4 to FIG. 8 may be used or three or more types of semiconductor nanoparticle phosphors may be included.
- FIG. 14 shows the light emitting device of the example shown in FIG. 11 such that it is partially enlarged
- FIG. 15 shows an exemplary variation of the light emitting device shown in FIG. 14
- a light emitting device 41 ′ may have a multi-layered structure including a first light emitting layer 47 a in which a first nanoparticle phosphor element 1 a is dispersed in medium 43 , and a second light emitting layer 47 b in which a second nanoparticle phosphor element 1 b is dispersed in medium 43 .
- second light emitting layer 47 b including second nanoparticle phosphor element 1 b using a red light emitting nanoparticle phosphor (a red light emitting layer) and first light emitting layer 47 a including first nanoparticle phosphor element 1 a using a green light emitting nanoparticle phosphor (a green light emitting layer) are deposited in said order, resorption of energy from first light emitting layer 47 a (the green light emitting layer) to second light emitting layer 47 b (the red light emitting layer) is less likely to occur, and light emitting device 41 ′ emits light satisfactorily efficiently.
- phosphor containing particle 1 When phosphor containing particle 1 is sealed in medium 43 , phosphor containing particle 1 is dispersed in medium 43 and thereafter a curing process is performed.
- a solution in which the glass material and phosphor containing particle 1 are mixed together is agitated to disperse phosphor containing particle 1 in the glass material. Then, the glass material is made to undergo condensation reaction and thus cured. In order to accelerate the condensation reaction, heat, an acid or a base and/or the like may be applied to the system.
- a solution in which the macromolecular material and phosphor containing particle 1 are mixed together is agitated to disperse phosphor containing particle 1 in the macromolecular material. Then, the macromolecular material is made to undergo condensation reaction and thus cured and resinified (or solidified).
- the curing can be done by a photo-curing method exposing the intermediate product to ultraviolet rays and thus curing it, a thermosetting method applying heat to the intermediate product and thus curing it, etc.
- phosphor containing particles having a large particle size sediment after a period of time has elapsed, and as a light emitting device a 2-layer structure including a lower layer including phosphor containing particles mainly having a large particle size and an upper layer including phosphor containing particles mainly having a small particle size is formed.
- the above production method is able to eliminate a complicated process such as forming each layer independently and allows the production process to be simplified.
- FIG. 16 schematically shows a phosphor containing sheet 71 according to a ninth embodiment of the present invention.
- the present invention also provides phosphor containing sheet 71 in which phosphor containing particle 1 according to a preferred embodiment of the present invention is dispersed in a sheet-like translucent medium 72 .
- the phosphor containing particle according to a preferred embodiment of the present invention is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process.
- a phosphor containing sheet is able to be produced, like phosphor containing sheet 71 according to the ninth embodiment shown in FIG. 16 , in a production process similar to that for a conventional phosphor.
- Such a phosphor containing sheet according to a preferred embodiment of the present invention is able to be suitably applied to a liquid crystal back light, a white light LED device, etc. similarly as conventional.
- the phosphor containing sheet using the phosphor containing particle according to a preferred embodiment of the present invention alleviates a constraint on a material for a medium in which the phosphor containing particle is dispersed, and thus provides an increased degree of freedom in selecting the material for the medium for the following grounds (1) and (2):
- a semiconductor nanoparticle phosphor may be resinified in a state in which it is included in a phosphor containing particle and thus protected thereby, and it is unnecessary to care about degradation of the semiconductor nanoparticle phosphor at the time of production;
- a semiconductor nanoparticle phosphor is used in a state where it is protected by a phosphor containing particle, and it is unnecessary to care about degradation of the semiconductor nanoparticle phosphor in use.
- a portion for protecting the sheet is unnecessary, and a space is able to also be saved.
- a portion for protection which has conventionally been essential in order to prevent moisture and oxygen which are a cause of degradation of a semiconductor nanoparticle phosphor in an uncovered state is able to be dispensed with and thus the sheet is able to be reduced in thickness. More specifically, it is unnecessary to provide an edge portion (or it is able to be reduced), and accordingly, a space is able to be saved in a planar direction, and it is unnecessary to provide a protective layer for protection (or it is able to be reduced), and accordingly, a space is able to be saved in the thickness direction.
- translucent medium 72 used for the phosphor containing sheet according to a preferred embodiment of the present invention a medium similar to translucent medium 43 described above for a light emitting device according to a preferred embodiment of the present invention is able to be suitably used. Furthermore, a method of forming into a sheet the translucent medium in which the phosphor containing particle according to a preferred embodiment of the present invention is dispersed is similar to that of producing a conventional phosphor containing sheet, e.g., initially as a coating liquid for forming a phosphor sheet a solution in which phosphor containing particles are dispersed in a resin (hereinafter referred to as a “sheet producing, phosphor containing particle dispersed silicone resin”) is produced.
- the sheet producing, phosphor containing particle dispersed silicone resin is obtained by mixing the phosphor containing particles and the resin.
- an addition reaction type silicone resin is used, and a compound containing an alkenyl group bonded to a silicon atom and a compound having a hydrogen atom bonded to a silicon atom are mixed, a curing reaction may start even at room temperature, and accordingly, a hydrosilylating reaction retarding agent such as an acetylene compound may be blended with the sheet producing, phosphor containing particle dispersed silicone resin to extend pot life.
- a dispersant, a leveling agent etc. as an additive for stabilizing the coating film, an adhesion assisting agent etc. such as a silane coupling agent, etc.
- a solvent may be added to provide a solution to make flowability appropriate, if necessary.
- the solvent is not particularly limited as long as it is able to adjust the resin in a flowing state in viscosity.
- toluene, methyl ethyl ketone, methyl isobutyl ketone, hexane, terpineol, etc. are mentioned.
- a homogenizer a self-revolving agitator, a triple roller, a ball mill, a planetary ball mill, a bead mill or a similar agitator and kneader is used for uniform mixture and dispersion to obtain the sheet producing, phosphor containing particle dispersed silicone resin.
- degassing in a vacuum or a decompressed condition is also preferably performed.
- the sheet producing, phosphor containing particle dispersed silicone resin is applied on a base member and dried.
- the resin is able to be applied with a reverse roll coater, a blade coater, a slit-die coater, a direct gravure coater, an offset gravure coater, a kis coater, a natural roll coater, an air knife coater, a roll blade coater, baribar roll blade coater, a two stream coater, a rod coater, a wire bar coater, an applicator, a dip coater, a curtain coater, a spin coater, a knife coater etc.
- a phosphor sheet according to a preferred embodiment of the present invention is also be able to be produced using printing methods such as screen printing, photogravure, planography. When using a printing method, screen printing is preferably used.
- the sheet is able to be dried using a general heating device such as a hot air dryer and an infra-red dryer.
- the sheet is able to be heated and cured using a general heating device such as a hot air dryer and an infra-red dryer. In that case, the sheet is heated and cured normally at 40 to 250° C. for 1 minute to 5 hours, preferably at 100° C. to 200° C. for 2 minutes to 3 hours.
- FIG. 16 shows a case where phosphor containing particle 1 according to the first embodiment shown in FIG. 1 is used, this is not exclusive, and phosphor containing particles 11 , 21 , 31 , 35 and 35 ′ according to the second to fifth embodiments shown in FIG. 4 to FIG. 8 may be used or three or more types of semiconductor nanoparticle phosphors may be included.
- FIG. 17 schematically shows a phosphor containing sheet 81 according to a tenth embodiment of the present invention. Note that in FIG. 17 , any portion having a configuration similar to that of phosphor containing sheet 71 according to the ninth embodiment shown in FIG. 16 is identically denoted and will not be described. Phosphor containing sheet 81 according to the tenth embodiment shown in FIG. 17 differs from phosphor containing sheet 71 according to the ninth embodiment shown in FIG.
- phosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group and phosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
- the phosphor containing particle according to a preferred embodiment of the present invention is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process.
- phosphor containing sheet 81 according to the tenth embodiment by producing a phosphor containing sheet in a process similar to that for a conventional phosphor, and furthermore, using a phosphor containing particles including semiconductor nanoparticle phosphors having different wavelengths, and by combining the same with an appropriate light source, a phosphor containing sheet which allows light to be emitted in a desired color is able to be produced.
- phosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group and phosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group are used in combination, a light emitting device exhibiting white light emission of high color reproducibility is able to be obtained. Therefore, a light emitting diode (LED) which emits blue light and a laser diode (LD) which emits blue light are able to be combined as a light source suitably and thus used.
- LED light emitting diode
- LD laser diode
- the mixing ratio of phosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group and phosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group is not particularly limited, in a weight ratio, phosphor containing particle 53 is preferably within a range from about 10 to about 1000 and more preferably within a range from about 20 to about 500, with phosphor containing particle 52 being defined as 100 .
- FIG. 18 schematically shows a phosphor containing sheet 91 according to an eleventh embodiment of the present invention. Note that in FIG. 18 , any portion having a configuration similar to that of phosphor containing sheet 71 according to the ninth embodiment shown in FIG. 16 is identically denoted and will not be described.
- Phosphor containing sheet 91 according to the eleventh embodiment shown in FIG. 18 differs from phosphor containing sheet 71 according to the ninth embodiment shown in FIG. 16 in that in a medium 72 , phosphor containing particle 1 according to a preferred embodiment of the present invention and in addition thereto phosphor 62 other than the semiconductor nanoparticle phosphor (a phosphor of a conventional type) are dispersed.
- a phosphor containing particle according to a preferred embodiment of the present invention and a phosphor of a conventional type may be combined together and furthermore combined with an appropriate light source to provide a light emitting device which emits light in a desired color.
- phosphor 62 of the conventionally type a phosphor similar to that described above for light emitting device 61 according to the eighth embodiment is able to be suitably used. Furthermore, the mixing ratio of phosphor containing particle 1 and the phosphor of the conventionally type is not particularly limited, either, and it is as has been described above as a suitable example.
- FIG. 18 shows a case where phosphor containing particle 1 according to the first embodiment shown in FIG. 1 is used, this is not exclusive, and phosphor containing particles 11 , 21 , 31 , 35 and 35 ′ according to the second to fifth embodiments shown in FIG. 4 to FIG. 8 may be used or three or more types of semiconductor nanoparticle phosphors may be included.
- A/B represents that A is covered with B.
- Example 1 presents a phosphor containing particle in which the nanoparticle core is InP, the shell layer is ZnS, the organic modifying group is dimethylamino ethanethiol (DAET), the matrix is a resin including a constitutional unit derived from MOE-200T, and the support is silica (the semiconductor nanoparticle phosphor: InP/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica).
- the nanoparticle core is InP
- the shell layer is ZnS
- the organic modifying group is dimethylamino ethanethiol (DAET)
- the matrix is a resin including a constitutional unit derived from MOE-200T
- the support is silica (the semiconductor nanoparticle phosphor: InP/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit
- ODE octadecene
- a hollow silica capsule having pores having an average particle size of about 10 ⁇ m was prepared.
- an aqueous phase adjusted so that ammonium hydrogencarbonate was 0.16 g/ml (a W2 phase) were prepared.
- the W1 phase was add to the O phase and subsequently they were emulsified with a homogenizer at a rotation speed of 8000 rpm to produce a W1/O phase, which was immediately added to the W2 phase and agitated with a magnetic stirrer at 35° C. for 2 hours. Subsequently, water or ethanol was added to the solution which was in turn centrifuged and subjected to an operation repeatedly to remove a supernatant and washed, and thereafter filtrated to obtain a precipitate. Subsequently, the precipitate was dried at 100° C. for 12 hours and then baked at 700° C. for 5 hours to obtain a hollow silica capsule having pores having an average particle size of about 10 ⁇ m.
- the obtained hollow silica capsule and the semiconductor nanoparticle phosphor containing MOE-200T were mixed together and vacuumed to introduce the MOE-200T solution into the capsule. And a silica source material was dropped and dried to close the pores on the surface of the capsule. Finally, the intermediate product was heated at 80° C. to polymerize and thus resinify the MOE-200T.
- the obtained phosphor containing particle has the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica.
- the obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- FIG. 19 is an optical microscopic image obtained when the phosphor containing particle of the present example is irradiated with excitation light having a wavelength of 405 nm.
- the phosphor containing particle emits red light.
- neither a resin including a constitutional unit derived from an ionic liquid nor a component of the semiconductor nanoparticle phosphor is detected, and It can be said that on the surface of the phosphor containing particle, neither a resin including a constitutional unit derived from an ionic liquid nor the semiconductor nanoparticle phosphor is present.
- the light emission is attributed to the semiconductor nanoparticle phosphor in the resin including the constitutional unit derived from the ionic liquid, that is present inside the phosphor containing particle.
- the hollow silica capsule's layer has a thickness of about 1 ⁇ m, which an EDX electron beam substantially cannot penetrate, and accordingly, the particle's internal elements are not detected by EDX.
- the obtained light emitting device underwent a lighting test and a heat resistance test.
- the lighting test the light emitting device was let to absorb excitation light having a wavelength of 405 nm and emit fluorescent light and the emission's intensity was measured, and the ratio of the number of emitted photons to the number of absorbed photons was presented as emission efficiency.
- the heat resistance test the light emitting device was heated in an electric furnace at 120° C. for a fixed period of time and subsequently subjected to measurement of quantum efficiency.
- the light emitting device of the present example as observed for change over time in the lighting test, presented satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time. Furthermore, a result of the heat resistance test showed that the light emitting device maintained satisfactory quantum efficiency.
- a light emitting device having a semiconductor nanoparticle phosphor similar to that of Example 1 dispersed directly into a matrix was used as comparative example 1 (the light emitting device: a semiconductor nanoparticle phosphor/acrylic resin).
- An ODE solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared.
- This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with DAET and a semiconductor nanoparticle phosphor was thus obtained.
- the semiconductor nanoparticle phosphor was centrifuged an dried to be powder which was in turn mixed into acrylic resin to obtain a mixture which was in turn dropped on a blue LED chip and the acrylic resin was cured to produce an LED light emitting device.
- the obtained light emitting device underwent a lighting test and a heat resistance test similarly as done in Example 1.
- the semiconductor nanoparticle phosphor was directly mixed into a general resin such as acryl, which causes the semiconductor nanoparticle phosphor to agglomerate, which is a cause of reduction in efficiency, and the light emitting device was impaired in efficiency. Furthermore, in a general resin such as acryl, the organic modifying group on the surface of the semiconductor nanoparticle phosphor easily detaches, which is a cause of degradation of the semiconductor nanoparticle phosphor, and the light emitting device was impaired in efficiency. Furthermore, a general resin such as acryl allows oxygen and moisture to permeate therethrough to some extent. Oxygen and moisture are a cause of degradation of the semiconductor nanoparticle phosphor, and the light emitting device's efficiency was decreased as time elapses.
- a general resin such as acryl the organic modifying group on the surface of the semiconductor nanoparticle phosphor easily detaches, which is a cause of degradation of the semiconductor nanoparticle phosphor, and the light emitting device was impaired in efficiency.
- a general resin such as acryl
- Example 1A presents a nanoparticle phosphor element was prepared in which the nanoparticle core includes CdSe, the shell layer includes ZnS, the organic modifying group includes dimethylamino ethanethiol (DAET), the matrix includes a resin including a constitutional unit derived from MOE-200T, and the support includes silica (the semiconductor nanoparticle phosphor: CdSe/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica).
- the nanoparticle core includes CdSe
- the shell layer includes ZnS
- the organic modifying group includes dimethylamino ethanethiol (DAET)
- the matrix includes a resin including a constitutional unit derived from MOE-200T
- the support includes silica (the semiconductor nanoparticle phosphor: CdSe/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle
- a toluene solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes CdSe and the shell layer includes ZnS was prepared, and this semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment for substitution with DAET, and was moved into an MOE-200T solvent. Subsequently, a phosphor containing particle having the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica was produced similarly as done in Example 1.
- the obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- the obtained light emitting device underwent a lighting test similarly as done in Example 1.
- the light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- the semiconductor nanoparticle phosphor has the configuration of CdSe/ZnS/DAET. It can be seen from Example 1 and Example 1A that in the phosphor containing particle, the semiconductor nanoparticle phosphor's core/shell structure is not limited to a single type and is able to be selected as appropriate. This increases a degree of freedom in design in producing the semiconductor nanoparticle phosphor and the phosphor containing particle.
- Example 2 presents the phosphor containing particle of Example 1 with the support including polyamidoimide resin rather than silica (the semiconductor nanoparticle phosphor: InP/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/polyamidoimide resin).
- An ODE solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared.
- This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with DAET, and was moved into an MOE-200T solvent.
- the semiconductor nanoparticle phosphor containing MOE-200T solvent was mixed with a solution in which a polyamidoimide resin material was dissolved, and the mixture was heated and agitated to resinify MOE-200T and also form the polyamidoimide resin to surround MOE-200T.
- the obtained phosphor containing particle has the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/polyamidoimide resin.
- the obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- the obtained light emitting device underwent a lighting test similarly as done in Example 1.
- the light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- Polyamidoimide resin is able to reduce permeation of oxygen and moisture to some extent, and secular degradation of the semiconductor nanoparticle phosphor was able to be significantly reduced or prevented. Furthermore, when the support is directly formed on the resin including the constitutional unit derived from the ionic liquid by a chemical, physicochemical, or mechanical methodology or the like, a polymeric support is able to be formed under a relatively milder processing condition than a support including silica or a similar inorganic substance, and is thus able to advantageously reduce a processing damage to the resin including the constitutional unit derived from the ionic liquid and the semiconductor nanoparticle phosphor. Furthermore, a polymeric material is more flexible than an inorganic material, and is thus advantageously less crackable and has excellent shock resistance.
- Example 3 presents the semiconductor nanoparticle phosphor of Example 1 with the organic modifying group including carboxydecanethiol (CDT) rather than DAET (the nanoparticle phosphor: InP/ZnS/CDT, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica).
- CDT carboxydecanethiol
- DAET the nanoparticle phosphor: InP/ZnS/CDT
- the phosphor containing particle the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica
- An ODE solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared.
- This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with CDT, and was moved into an MOE-200T solvent.
- a phosphor containing particle having the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica was produced in a method similar to that used in Example 1.
- the obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- the obtained light emitting device underwent a lighting test similarly as done in Example 1.
- the light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- CDT including a polar group (a carboxyl group) was used as the organic modifying group, and accordingly, the semiconductor nanoparticle phosphor had satisfactory dispersibility into the ionic liquid.
- the organic modifying group is not limited to an ionic organic modifying group and is able to be an organic modifying group including a polar functional group. This increases a degree of freedom in design in producing the semiconductor nanoparticle phosphor and the phosphor containing particle.
- Example 4 presents the phosphor containing particle of Example 1 with the support having a 2-layer structure including polyamidoimide resin and silica rather than (a monolayer of) silica (the semiconductor nanoparticle phosphor: InP/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/polyamidoimide resin/silica).
- An ODE solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared.
- This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with DAET, and was moved into an MOE-200T solvent.
- the semiconductor nanoparticle phosphor containing MOE-200T solvent was mixed with a solution in which a polyamidoimide resin material was dissolved, and the mixture was heated and agitated to resinify MOE-200T and also form the polyamidoimide resin to surround MOE-200T.
- the obtained phosphor containing particle has the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/polyamidoimide resin/silica.
- the obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- the obtained light emitting device underwent a lighting test similarly as done in Example 1.
- the light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- the support is a multilayer, and accordingly it is able to satisfactorily reduce or prevent permeation of oxygen and moisture, and secular degradation of the semiconductor nanoparticle phosphor is able to be significantly reduced or prevented. Furthermore, since the silica layer formation process is performed under the basic condition after the resin including the constitutional unit derived from the ionic liquid is covered with a polymeric support, the resin including the constitutional unit derived from the ionic liquid is able to be protected from the base. This is able to reduce a processing damage to the ionic liquid and the semiconductor nanoparticle phosphor in forming the silica layer.
- Example 5 presents a light emitting device having a 2-layer structure produced using two types of phosphor containing particles.
- Example 2 A method similar to that used in Example 1 was used to produce a phosphor containing particle having a structure of InP/ZnS/DAET/silica. This phosphor containing particle had a light emission peak wavelength in the red spectrum region.
- Example 2 A method similar to that used in Example 1 was used to produce a phosphor containing particle having a structure of InP/ZnS/DAET/silica. This phosphor containing particle had a light emission peak wavelength in the green spectrum region.
- the red light emitting semiconductor nanoparticle phosphor has a larger particle size than the green light emitting semiconductor nanoparticle phosphor, and a red light emitting nanoparticle phosphor element also has a larger particle size than a green light emitting nanoparticle phosphor element.
- a solution including these two types of phosphor containing particles was mixed into an acrylic resin material and the mixture was dropped on a blue light emitting LED chip, and subsequently, a heating and curing process was performed. While being heated and thus cured, a red light emitting nanoparticle phosphor device having a large particle size sedimented after a period of time has elapsed, and as a light emitting device a 2-layer structure was formed which included a lower layer mainly including red light emitting phosphor containing particles and an upper layer mainly including green light emitting phosphor containing particles.
- the obtained light emitting device underwent a lighting test similarly as done in Example 1.
- the light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- the structure of the light emitting device of the present example (a structure in which a blue light emitting LED chip light source, a red light emitting layer, and a green light emitting layer deposited in said order) is less likely to cause resorption of energy from the green light emitting layer to the red light emitting layer, and thus has better light emission efficiency as an LED light emitting device. Furthermore, the difference in size between the green light emitting phosphor containing particle and the red light emitting phosphor containing particle is able to be exploited so that after they are mixed into acrylic resin they are able to be left to allow the particles having the larger size to sediment to form a 2-layer structure. This is able to eliminate a complicated process such as forming the green light emitting layer and the red light emitting layer independently and thus allows the production process to be simplified.
- Example 6 presents the phosphor containing particle of Example 1A with the matrix of the resin including the constitutional unit derived from MOE-200T replaced with an ionic liquid including a constitutional unit derived from DEME (the semiconductor nanoparticle phosphor: CdSe/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/DEME/silica).
- a toluene solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes CdSe and the shell layer includes ZnS was prepared, and this semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment for substitution with DAET, and was moved into a DEME solvent. Subsequently, a phosphor containing particle having the configuration of the semiconductor nanoparticle phosphor/the ionic liquid including the constitutional unit derived from DEME/silica was produced similarly as done in Example 1, except that the step of heating at 80° C. to resinify the ionic liquid was not performed.
- the obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- the obtained light emitting device underwent a lighting test similarly as done in Example 1.
- the light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- the matrix of the phosphor containing particle includes an ionic liquid including a constitutional unit derived from DEME. It can be seen from the present example that in the nanoparticle phosphor element the matrix including the constitutional unit derived from the ionic liquid is not limited to a solid (a resin) and may be a liquid. This increases a degree of freedom in design in producing the semiconductor nanoparticle phosphor and the phosphor containing particle.
- Example 7 presents the phosphor containing particle of Example 1A with a non-globular support used to hold an ionic liquid (the semiconductor nanoparticle phosphor: CdSe/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/MOE-200T/silica).
- the support of the present example was produced as follows: Initially, an aqueous phase adjusted so that an aqueous solution of 30% sodium silicate and an aqueous solution of polymethylmethacrylate were 0.83 g/ml and 0.28 g/ml, respectively (a W1 phase), a hexane phase adjusted so that Tween 80 (polyoxyethylene sorbitan monooleate) and Span 80 (sorbitan monooleate) were 0.014 g/ml and 0.007 g/ml, respectively (an O phase), and an aqueous phase adjusted so that ammonium hydrogencarbonate was 0.16 g/ml (a W2 phase) were prepared.
- the W1 phase was add to the O phase and subsequently they were agitated with a magnetic stirrer at a rotation speed of 900 rpm, and the intermediate product was added to the W2 phase and agitated with a magnetic stirrer at 35° C. for 2 hours.
- pored silica having an average particle size of about 80 ⁇ m and having polygonal pores (hereinafter also referred to as “pored silica”) as shown in an SEM analysis result shown in FIG. 21 .
- the obtained pored silica and a semiconductor nanoparticle phosphor containing MOE-200T were mixed together and vacuumed to introduce the MOE-200T solution into the pored silica. Finally, the intermediate product was heated at 80° C. to polymerize and thus resinify the MOE-200T.
- the obtained phosphor containing particle has the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica.
- the obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- FIG. 22 is an optical microscopic image obtained when the phosphor containing particle of the present example is irradiated with excitation light having a wavelength of 405 nm. In FIG. 22 , it can be confirmed that the phosphor containing particle emits light.
- the obtained light emitting device underwent a lighting test similarly as done in Example 1.
- the light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- the support holding the ionic liquid has a non-globular shape. Furthermore, in the present example, the pored silica holding the resin including the constitutional unit derived from the ionic liquid does not undergo a process for closing the pores. It can be seen from Example 3 that the present invention may have the support holding the ionic liquid in a non-globular structure and is also able to significantly reduce or prevent degradation of efficiency over time without a process for closing the pores of the support holding the ionic liquid.
- Example 8 a support 36 having a shape shown in FIG. 9 or a support 37 having a shape shown in FIG. 10 were produced.
- the methodology of producing the hollow silica capsule of Example 1 having an average particle size of about 10 ⁇ m and having pores was used with each source material varied in concentration to produce the support having the shape shown in FIG. 9 or FIG. 10
- FIG. 23 is a cross-sectional SEM image of a support having a hollow capsular structure having pores penetrating from a wall surface into an internal space and having a diameter of about 0.3 ⁇ m.
- FIG. 24 is a cross-sectional SEM image of a globular support having pores extending from a surface inwards and having a diameter of about 0.3 ⁇ m. Note that the diameter of the pore of the hollow silica capsule of Example 1 was about 20 nm.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
A phosphor containing particle includes a semiconductor nanoparticle phosphor and a matrix including a constitutional unit derived from an ionic liquid, the semiconductor nanoparticle phosphor being dispersed in the matrix. A light emitting device comprises a light source and a wavelength converter in which the phosphor containing particle of the present invention is dispersed in a translucent medium. A phosphor containing sheet in which the phosphor containing particle of the present invention is dispersed in a sheet-like translucent medium.
Description
- This nonprovisional application is based on Japanese Patent Application Nos. 2015-244210 and 2015-244211 filed on Dec. 15, 2015, with the Japan Patent Office, the entire contents of which are hereby incorporated by reference.
- 1. Field of the Invention
- The present invention relates to a phosphor containing particle, and a light emitting device and a phosphor containing sheet using the same.
- 2. Description of the Related Art
- It is known that a semiconductor nanoparticle phosphor (also referred to as a quantum dot) reduced in size to approximately an exciton Bohr-radius presents a quantum size effect. A quantum size effect is that when a substance is reduced in size, an electron therein is unable to move freely and the electron's energy is only able to assume a specific value rather than any value. Furthermore, it is also known that as the semiconductor nanoparticle phosphor which confines an electron therein varies in size, the electron's energy state also varies, and the semiconductor nanoparticle phosphor emits light having a wavelength which is shorter as the semiconductor nanoparticle phosphor is reduced in dimension.
- Such a semiconductor nanoparticle phosphor is of commercial interest for an electron characteristic size-tuneable by the quantum size effect. The size-tuneable electron characteristic is able to be used in a variety of applications such as biological labeling, photovoltaic power generation, catalysis, biological image pick-up, LED, general space lighting, and an electron emission display.
- Semiconductor nanoparticle phosphor has a large specific surface area and a high surface activity, and accordingly, it chemically and physically less easily stabilizes. Accordingly, a method for stabilizing a semiconductor nanoparticle phosphor has been proposed.
- For example, Japanese National Patent Publication No. 2013-505347 discloses a plurality of coated primary particles such that each primary particle includes a primary matrix material and a group of semiconductor nanoparticles, each primary particle is individually provided with a layer of a surface coating material, the primary particle has a microbead structure, and the surface coating material includes a polymeric material. A plurality of primary particles thus coated is able to reduce reactivity to a surrounding environment and a process performed after the primary particles are produced.
- However, a conventional art disclosed in Japanese National Patent Publication No. 2013-505347 uses resins such as epoxy, silicone and (meth)acrylate, silica, etc. as the primary matrix material. When a semiconductor nanoparticle phosphor is directly blended with a sealing material such as silicone and acrylate, the semiconductor nanoparticle phosphor agglomerates and accordingly, has an impaired optical characteristic or is similarly degraded, and after the semiconductor nanoparticle phosphor is sealed, oxygen passes through the sealing material and moves to a surface of the semiconductor nanoparticle phosphor, and thus causes photooxidation, resulting in a reduced quantum yield.
- In order to solve such a problem, Japanese National Patent Publication No. 2013-505347 proposes a method in which a plurality of semiconductor nanoparticle phosphors are previously held in a matrix material such as polymer and glass and the intermediate product has a surface coated to produce a primary particle which is in turn buried in a host LED material such as silicone and acrylate (see Japanese National Patent Publication No. 2013-505347, FIG. 8). This method, however, still has a problem, i.e., the primary particle's matrix material is similar to the host LED material, and accordingly, in producing the primary particle the semiconductor nanoparticle phosphor agglomerates resulting in an impaired optical characteristic.
- Preferred embodiments of the present invention provide a phosphor containing particle producible while preventing degradation of a semiconductor nanoparticle phosphor by agglomeration, and a light emitting device and a phosphor containing sheet using the same.
- The technique described in Japanese National Patent Publication No. 2013-505347 uses resins such as epoxy, silicone and (meth)acrylate, silica, etc. as a translucent medium and when a semiconductor nanoparticle phosphor is incorporated thereinto the semiconductor nanoparticle phosphor will degrade. In view of this, the present inventors have found that a matrix including a constitutional unit derived from an ionic liquid is able to be used as a translucent medium dispersing the semiconductor nanoparticle phosphor so that when a particle is produced the semiconductor nanoparticle phosphor does not degrade and is thereafter also able to present excellent stability against photooxidation, and the present inventors have thus completed the present invention. More specifically, the present invention is as follows:
- A phosphor containing particle according to a preferred embodiment of the present invention is characterized by including a semiconductor nanoparticle phosphor and a matrix including a constitutional unit derived from an ionic liquid, the semiconductor nanoparticle phosphor being dispersed in the matrix.
- The matrix used in the phosphor containing particle according to various preferred embodiments of the present invention includes a resin derived from the ionic liquid. The ionic liquid used in the phosphor containing particle according to various preferred embodiments of the present invention includes a polymerizable functional group.
- According to the present invention, by providing a semiconductor nanoparticle phosphor in the form of a particle dispersed in a matrix including a constitutional unit derived from an ionic liquid (i.e., a phosphor containing particle), such particles are able to be produced while the semiconductor nanoparticle phosphor's agglomeration is prevented, so that a high optical characteristic is able to be maintained, and even after the particles are produced, the semiconductor nanoparticle phosphor's degradation due to moisture and oxygen is able to be reduced. Thus a phosphor containing particle is able to be provided which has high light emission efficiency and excellent chemical stability, and is also excellent in handleability. Furthermore, the thus obtained phosphor containing particle, when produced in a size approximately the same as a currently used phosphor, is able to be used in a form similar to that of a currently commercially used phosphor, and a light emitting device and a phosphor containing sheet, etc. using the same are able to be provided.
- The phosphor containing particle according to a preferred embodiment of the present invention has a particle size within a range of about 100 nm to about 30 μm.
- The semiconductor nanoparticle phosphor according to a preferred embodiment of the present invention may include a single type of semiconductor nanoparticle phosphor or may include a red fluorescent light emitting semiconductor nanoparticle phosphor and a green fluorescent light emitting semiconductor nanoparticle phosphor.
- The resin used in the phosphor containing particle according to various preferred embodiments of the present invention is crosslinked.
- The phosphor containing particle according to a preferred embodiment of the present invention has an outermost surface including a translucent coating layer. In that case, a material included in the coating layer is preferably an inorganic material having a band gap equal to or greater than 3.0 eV.
- The phosphor containing particle according to a preferred embodiment of the present invention may include a support to seal the matrix. In that case, preferably, the support includes silica.
- In the phosphor containing particle according to a preferred embodiment of the present invention, the semiconductor nanoparticle phosphor may have a surface including a polar functional group.
- Furthermore, in the present invention, preferably, the support has a hollow capsular structure having pores penetrating from a wall surface into an internal space, or a globular structure having pores extending from a surface inwards.
- The present invention also provides a light emitting device comprising a light source and a wavelength converter in which the phosphor containing particle according to preferred embodiments of the present invention as described above is dispersed in a translucent medium.
- The light emitting device according to a preferred embodiment of the present invention may include a phosphor containing particle in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, and a phosphor containing particle in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
- In the light emitting device according to a preferred embodiment of the present invention, other than the phosphor containing particle, a phosphor other than the semiconductor nanoparticle phosphor may further be dispersed in the medium.
- The present invention also provides a phosphor containing sheet in which the phosphor containing particle according to a preferred embodiment of the present invention described above is dispersed in a sheet-like translucent medium.
- The phosphor containing sheet according to a preferred embodiment of the present invention may include a phosphor containing particle in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, and a phosphor containing particle in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
- In the phosphor containing sheet according to a preferred embodiment of the present invention, a phosphor other than the semiconductor nanoparticle phosphor may further be dispersed in the medium.
- The above and other elements, features, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments with reference to the attached drawings.
-
FIG. 1 schematically shows aphosphor containing particle 1 according to a first embodiment of the present invention. -
FIG. 2 is a cross section ofphosphor containing particle 1 shown inFIG. 1 such that it is partially enlarged. -
FIG. 3 is a cross section ofphosphor containing particle 1 shown inFIG. 1 such that it is partially enlarged. -
FIG. 4 schematically shows aphosphor containing particle 11 according to a second embodiment of the present invention. -
FIG. 5 schematically shows aphosphor containing particle 21 according to a third embodiment of the present invention. -
FIG. 6 schematically shows aphosphor containing particle 31 according to a fourth embodiment of the present invention. -
FIG. 7 schematically shows a phosphor containing particle 35 according to a fifth embodiment of the present invention. -
FIG. 8 schematically shows a phosphor containing particle 35′ according to a fifth embodiment of the present invention. -
FIG. 9 shows one example of an exemplary variation of a support. -
FIG. 10 shows one example of an exemplary variation of the support. -
FIG. 11 schematically shows alight emitting device 41 according to a sixth embodiment of the present invention. -
FIG. 12 schematically shows alight emitting device 51 according to a seventh embodiment of the present invention. -
FIG. 13 schematically shows alight emitting device 61 according to an eighth embodiment of the present invention. -
FIG. 14 shows the light emitting device of the example shown inFIG. 11 such that it is partially enlarged. -
FIG. 15 shows an exemplary variation of the light emitting device shown inFIG. 14 . -
FIG. 16 schematically shows aphosphor containing sheet 71 according to a ninth embodiment of the present invention. -
FIG. 17 schematically shows aphosphor containing sheet 81 according to a tenth embodiment of the present invention. -
FIG. 18 schematically shows aphosphor containing sheet 91 according to an eleventh embodiment of the present invention. -
FIG. 19 is an optical microscopic image obtained when the phosphor containing particle of Example 1 is irradiated with excitation light having a wavelength of 405 nm. -
FIG. 20 shows a cross-sectional SEM analysis result of a hollow silica capsule. -
FIG. 21 shows a SEM analysis result of a support of Example 7. -
FIG. 22 is an optical microscopic image obtained when the phosphor containing particle of Example 7 is irradiated with excitation light having a wavelength of 405 nm. -
FIG. 23 is a cross-sectional SEM image of one example of a support of Example 8. -
FIG. 24 is a cross-sectional SEM image of one example of the support of Example 8. - <Phosphor Containing Particle>
- (Phosphor Containing Particle According to a First Embodiment)
-
FIG. 1 schematically shows a phosphor containing particle (a nanoparticle phosphor element/a microbead) 1 according to a first embodiment of the present invention.Phosphor containing particle 1 according to a preferred embodiment of the present invention is characterized by including asemiconductor nanoparticle phosphor 2 and amatrix 3 including a constitutional unit derived from an ionic liquid,semiconductor nanoparticle phosphor 2 being dispersed inmatrix 3. - The “ionic liquid” used according to preferred embodiments of the present invention is preferably a salt in a molten state even at an ambient temperature (e.g., about 25 degrees centigrade) (ambient temperature molten salt) which is preferably expressed in a general formula (I) below:
-
X+Y− (I). - In the general formula (I), X+ is a cation selected from among imidazolium ion, pyridinium ion, phosphonium ion, aliphatic quaternary ammonium ion, pyrrolidinium, and sulfonium. Among these, aliphatic quaternary ammonium ion is a particularly preferred cation as it is excellently stable thermally and against air and moisture in the atmosphere.
- Furthermore, in the general formula (I), Y− is an anion selected from among tetrafluoroboric acid ion, hexafluorophosphoric acid ion, bistrifluoromethyl sulfonyl imide acid ion, perchloric acid ion, tris(trifluoromethylsulfonyl) carbon acid ion, trifluoromethanesulfonic acid ion, trifluoroacetic acid ion, carbonic acid ion, and halogen ion. Among these, bis trifluoromethyl sulfonyl imide acid ion is a particularly preferred anion as it is excellently stable thermally and against air and moisture in the atmosphere.
-
Matrix 3 includes a constitutional unit derived from an ionic liquid, and specifically, it may include an ionic liquid or a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.Matrix 3 may include another component as long asmatrix 3 includes an ionic liquid or a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group as a major component (e.g., by 80 mass % or more). - The ionic liquid is able to be an ionic liquid including a polymerizable functional group or an ionic liquid excluding a polymerizable functional group. The ionic liquid excluding a polymerizable functional group for example includes N,N,N-trimethyl-N-propyl ammonium bis(trifluoromethane sulfonyl) imide, N,N-dimethyl-N-methyl-2-(2-methoxy ethyl) ammonium bis(trifluoromethane sulfonyl)imide (DEME), and the like.
- The ionic liquid used in
phosphor containing particle 1 according to various preferred embodiments of the present invention includes a polymerizable functional group. By including the ionic liquid including the polymerizable functional group, the ionic liquid functioning as a dispersion medium for the semiconductor nanoparticle phosphor is able to be polymerized as it is in the presence of the polymerizable functional group. Thus, by providing the resin including the constitutional unit derived from the ionic liquid including the polymerizable functional group by polymerizing the ionic liquid including the polymerizable functional group with the semiconductor nanoparticle phosphor being dispersed, agglomeration which has occurred in solidification of the resin in which the semiconductor nanoparticle phosphor has been dispersed is significantly reduced or prevented. Furthermore, as described above, the semiconductor nanoparticle phosphor is dispersed in the resin including the constitutional unit derived from the ionic liquid including the polymerizable functional group, so that the semiconductor nanoparticle phosphor is electrostatically stabilized, the semiconductor nanoparticle phosphor is reliably and securely protected, the surface of the semiconductor nanoparticle phosphor is protected against the effects of air and moisture, and a light emitting device high in efficiency in light emission is realized. - The polymerizable functional group of the ionic liquid is not particularly restricted. For polymerization by heating or catalyst reaction, a (meth)acrylic acid ester group (a (meth)acryloyloxy group) is preferred because the semiconductor nanoparticle phosphor is able to be solidified with a dispersed state being maintained from a state of a liquid in which stable dispersion is achieved.
- To achieve excellent stability against air and moisture in the atmosphere, suitable examples of the ionic liquid including such a (meth)acrylic acid ester group include 2-(methacryloyloxy)-ethyltrimethylammonium bis(trifluoromethanesulfonyl) imide (MOE-200T) shown in a formula below:
- and 1-(3-acryloyloxy-propyl)-3-methylimidazolium bis(trifluoromethanesulfonyl) imide shown in a formula below:
- The ionic liquid including the polymerizable functional group as described above is able to be obtained by introducing a polymerizable functional group into a conventionally known appropriate ionic liquid with a conventionally known appropriate method, however, a commercially available product may naturally be used.
- Suitable conditions in accordance with a type or an amount of an ionic liquid including a polymerizable functional group to be used are selected as appropriate as conditions for a temperature and a time period for polymerization of the ionic liquid including the polymerizable functional group while the semiconductor nanoparticle phosphor is dispersed, and the conditions are not particularly restricted. For example, when 2-(methacryloyloxy)-ethyltrimethylammonium bis(trifluoromethanesulfonyl) imide may preferably be used as the ionic liquid including the polymerizable functional group, polymerization is able to suitably be achieved, for example, under a condition of a temperature from 60 to 100 degrees centigrade for 1 to 10 hours. When 1-(3-acryloyloxy-propyl)-3-methylimidazoliumethyltrimethylammonium bis(trifluoromethanesulfonyl) imide is used as the ionic liquid including the polymerizable functional group, polymerization is able to be suitably achieved, for example, under a condition of a temperature from about 60 degrees centigrade to about 150 degrees centigrade for about 1 hour to about 10 hours.
- When a catalyst is used in polymerization, a catalyst to be used is not particularly restricted, and for example, conventionally known azobisisobutyronitrile or
dimethyl -
Semiconductor nanoparticle phosphor 2 inphosphor containing particle 1 according to a preferred embodiment of the present invention is a single phosphor particles without scattering of visible light, and a conventionally known appropriate semiconductor nanoparticle phosphor is able to be used without being particularly restricted. By using the semiconductor nanoparticle phosphor, advantageously, an emission wavelength is able to be precisely controlled based on control of particle size and control of composition. -
FIG. 2 is a cross section ofphosphor containing particle 1 shown inFIG. 1 such that it is partially enlarged. As shown inFIG. 2 ,semiconductor nanoparticle phosphor 2 includes ananoparticle core 2 a including a compound semiconductor, ashell layer 2 b coveringnanoparticle core 2 a, and an organic modifyinggroup 6 bonded to an external surface ofshell layer 2 b. Preferably, organic modifyinggroup 6 includes a polar functional group. -
Nanoparticle core 2 a includes a compound semiconductor. The compound semiconductor included innanoparticle core 2 a has a composition such as InN, InP, InAs, InSb, InBi, InGaN, InGaP, GaP, AlInN, AlInP, AlGaInN, AlGaInP, CdS, CdSe, CdTe, CdZnS, CdZnSe, CdZnTe, CdZnSSe, CdZnSeTe, In2S3, In2Se3, Ga2Se3, In2Te3, Ga2Te3, CuInS2, CuInSe2, CuInTe2 for example. The compound semiconductor having such a composition has a bandgap energy which emits visible light of a wavelength of about 380 nm to about 780 nm. Accordingly, by controlling particles' diameter and mixed crystal ratio, a nanoparticle core which is able to emit any visible light is able to be formed. -
Nanoparticle core 2 a preferably includes a semiconductor of InP, GaP, or CdSe. This is because InP, GaP, and CdSe are composed of a small number of materials and thus easily produced, and in addition, they are materials which present high quantum yields, and present high light emission efficiency when irradiated with LED light. Note that quantum yield as referred to herein is a ratio of the number of photons emitting light as fluorescence relative to the number of absorbed photons. -
Shell layer 2 b includes a compound semiconductor formed succeeding a crystal structure ofnanoparticle core 2 a.Shell layer 2 b is a layer formed by growing a semiconductor crystal on a surface ofnanoparticle core 2 a, andnanoparticle core 2 a andshell layer 2 b are bonded by a chemical bond. Preferably,shell layer 2 b is at least one selected from the group consisting of GaAs, GaP, GaN, GaSb, InAs, InP, InN, InSb, AlAs, AlP, AlSb, AlN, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, CdZnS, CdZnSe, CdZnTe, CdZnSSe, CdZnSeTe, In2O3, Ga2O3, In2S3, Ga2S3, and ZrO2, for example. Preferablyshell layer 2 b has a thickness of about 0.1 nm to about 10 nm. Furthermore,shell layer 2 b may have a multilayer structure including a plurality of shell layers. - Furthermore, as a material other than the above used to form the semiconductor nanoparticle phosphor, AlS, APbS, PbSe, Si, Ge, MgS, MgSe, MgTe, etc. are also included.
- Furthermore, the semiconductor nanoparticle phosphor may be a two-component core type, three-component core type, four-component core type, core-shell type or core multishell type, doped or slanted semiconductor nanoparticle phosphor known to those skilled in the art.
FIG. 1 shows a plurality of semiconductor nanoparticle phosphors of a single type dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group. -
Shell layer 2 b has an external surface bonded to organic modifyinggroup 6. Organic modifyinggroup 6 is formed by causing a modifying organic compound to react to bond to the external surface ofshell layer 2 b. Thus, a dangling bond of a surface ofshell layer 2 b is capped by organic modifyinggroup 6 and a surface defect ofshell layer 2 b is significantly reduced or prevented, andnanoparticle core 2 a is thus improved in light emission efficiency. -
Semiconductor nanoparticle phosphor 2 that has a surface with organic modifyinggroup 6 is able to preventsemiconductor nanoparticle phosphors 2 from agglomerating together. This helps to disperse the semiconductor nanoparticle phosphor inmatrix 3 including a constitutional unit derived from an ionic liquid. - Preferably, the modifying organic compound has a polar functional group at a terminal thereof. When the modifying organic compound is caused to react with the external surface of
shell layer 2 b, the polar functional group is disposed on a surface ofsemiconductor nanoparticle phosphor 2. Thus,semiconductor nanoparticle phosphor 2 has a surface having a polarity, andsemiconductor nanoparticle phosphor 2 is thus able to disperse inmatrix 3 including a constitutional unit derived from an ionic liquid. - Examples of the polar functional group include a carboxyl group, a hydroxyl group, a thiol group, a cyano group, a nitro group, an ammonium group, an imidazolium group, a sulfonium group, a pyridinium group, a pyrrolidinium group, a phosphonium group, and the like.
- Preferably, the polar functional group in the modifying organic compound is an ionic functional group. The ionic functional group is high in polarity, and the semiconductor nanoparticle phosphor having a surface with the ionic functional group is significantly excellent in dispersibility in a matrix including a constitutional unit derived from an ionic liquid. Furthermore, when the semiconductor nanoparticle phosphor is sealed in a matrix including a constitutional unit derived from an ionic liquid, an electrostatic effect by the ionic liquid's positive and negative charges significantly enhances the semiconductor nanoparticle phosphor's stability. The ionic liquid will be described later.
- Examples of the ionic functional group include an ammonium group, an imidazolium group, a sulfonium group, a pyridinium group, a pyrrolidinium group, a phosphonium group, and the like.
- The modifying organic compound's remaining structure is not particularly limited as long as it has a polar functional group at a terminal thereof. Specifically, dimethylaminoethanethiol, carboxydecanethiol, n-trimethoxysilyl butanoic acid (TMSBA) 3-aminopropyldimethylethoxysilane (APDMES), 3-aminopropyltrimethoxysilane (APTMS), N-trimethoxysilylpropyl-N, N, N-trimethyl ammonium chloride (TMSP-TMA), 3-(2-aminoethylamino)propyltrimethoxysilane (AEAPTMS), 2-cyanoethyltriethoxysilane, and the like are able to be used.
- The semiconductor nanoparticle phosphor may be a single type thereof or two or more types thereof in combination.
- The shape of the semiconductor nanoparticle phosphor is not particularly restricted and a semiconductor nanoparticle phosphor including a conventionally known appropriate shape such as a globular shape, a rod shape, or a wire shape, for example, is able to be used without particularly being restricted. In particular, from a point of view of ease in control of light emission characteristics based on control of shape, a globular semiconductor nanoparticle phosphor is preferably used, for example.
- The particle size of the semiconductor nanoparticle phosphor is able to be selected as appropriate in accordance with a source material and a desired emission wavelength, without being particularly restricted, however, it is preferably within a range from about 1 nm to about 20 nm and more preferably within a range from about 2 nm to about 5 nm, for example. When the semiconductor nanoparticle phosphor has a particle size smaller than about 1 nm, a ratio of a surface area to a volume tends to increase, a surface defect tends to be dominant, and an effect tends to be lowered. When the semiconductor nanoparticle phosphor has a particle size exceeding about 20 nm, a state of dispersion tends to be low and agglomeration and settling tend to occur. When the semiconductor nanoparticle phosphor has a globular shape, the particle size refers, for example, to an average particle size measured with a particle size distribution analyzer or to a size of a particle observed with an electron microscope. When the semiconductor nanoparticle phosphor has a rod shape, the particle size refers, for example, to a length of a minor axis and a major axis measured with an electron microscope. When the semiconductor nanoparticle phosphor has a wire shape, the particle size refers, for example, to a length of a minor axis and a major axis measured with an electron microscope.
- Though the content of the semiconductor nanoparticle phosphor (or a total amount thereof when two or more types of semiconductor nanoparticle phosphors are used as will be described later) is not particularly restricted, the content is preferably within a range from about 0.001 to about 50 parts by weight and more preferably within a range from about 0.01 to about 20 parts by weight, for example, with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group. When the content of the semiconductor nanoparticle phosphor is smaller than about 0.001 part by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group, light emission from the semiconductor nanoparticle phosphor tends to be excessively weak. When the content of the semiconductor nanoparticle phosphor exceeds about 50 parts by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group, uniform dispersion in the ionic liquid including the polymerizable functional group tends to be difficult.
- Hereinafter reference will be made to
FIG. 3 to specially describe an effect obtained by dispersingsemiconductor nanoparticle phosphor 2 inmatrix 3 including a constitutional unit derived from an ionic liquid. -
Semiconductor nanoparticle phosphor 2 inmatrix 3 is able to be satisfactorily dispersed inmatrix 3 by an electrostatic effect of apositive charge 8 and anegative charge 9 attributed to the ionic liquid inmatrix 3. - Furthermore, the electrostatic effect attributed to the ionic liquid in
matrix 3 stabilizes organic modifyinggroup 6 of the surface of the semiconductor nanoparticle phosphor and significantly reduces or prevents a dangling bond caused by separation of organic modifyinggroup 6 from the surface of the semiconductor nanoparticle phosphor, and is thus able to prevent the semiconductor nanoparticle phosphor from having a reduced quantum yield. - Inter alia, when organic modifying
group 6 includes a polar functional group, an ionic functional group, etc. and the functional groups are present on a surface of the semiconductor nanoparticle phosphor, an electrostatic interaction betweenelectric charge 7 included in these functional groups andpositive charge 8 andnegative charge 9 derived from the ionic liquid further enhances the semiconductor nanoparticle phosphor's stability. - Thus, the phosphor containing particle according to a preferred embodiment of the present invention has an ion that configures an ionic liquid coordinated on a surface of the semiconductor nanoparticle phosphor to stabilize nanoparticles and thus allows high light emission efficiency. Furthermore, as the semiconductor nanoparticle phosphor is dispersed in a matrix including a constitutional unit derived from an ionic liquid including a polymerizable functional group which has a low oxygen and moisture permeability, particles are able to be produced while the semiconductor nanoparticle phosphor's agglomeration is prevented, so that a high optical characteristic is able to be maintained, and even after the particles are produced, the semiconductor nanoparticle phosphor's degradation due to moisture and oxygen is able to be reduced. Thus, when the semiconductor nanoparticle phosphor is excited and thus caused to emit light, it is less likely to be photooxidized and thus has an excellent chemical stability.
- The matrix including the constitutional unit derived from the ionic liquid including the polymerizable functional group with the semiconductor nanoparticle phosphor dispersed therein (a polymer matrix) may be formed into particles in any method, however, the polymer matrix is able to be physically crushed to have a desired size to suitably produce the particles.
- The phosphor containing particle according to preferred embodiments of the present invention may have conventionally known appropriate shapes such as a globe, a rod and a wire, however, preferably it is globular, spherical in particular, in terms of easiness in controlling a light emission characteristic by controlling a shape.
- The phosphor containing particle according to preferred embodiments of the present invention is not particularly limited in particle size, however, a range of about 50 nm to about 2 mm is preferable, a range of about 100 nm to about 30 μm is more preferable, and a range of about 1 μm to about 20 μm is particularly preferable. This is because when the phosphor containing particle has a particle size less than 100 nm, the phosphor containing particle will have a large surface area/volume ratio per particle and has a tendency to have a large loss due to scattering of excitation light, whereas when the phosphor containing particle has a particle size exceeding 30 μm, it has a tendency to be difficult to disperse in a translucent medium through a process similar to that for a conventional phosphor. The phosphor containing particle having a particle size within the above range is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process, and a light emitting device and a phosphor containing sheet, etc. using the same are able to be provided. Note that the phosphor containing particle's particle size indicates a size of the particle as observed with an optical microscope or a scanning electron microscope (SEM), or a value as measured with a particle size distribution measurement device.
- (Phosphor Containing Particle According to a Second Embodiment)
-
FIG. 4 schematically shows a phosphor containing particle (a nanoparticle phosphor element/a microbead) 11 according to a second embodiment of the present invention. Note that inFIG. 4 , any portion having a configuration similar to that ofphosphor containing particle 1 according to the first embodiment shown inFIG. 1 is identically denoted and will not be described. -
Phosphor containing particle 11 according to the second embodiment shown inFIG. 4 includes a semiconductor nanoparticle phosphor including a red fluorescent light emittingsemiconductor nanoparticle phosphor 12 and a green fluorescent light emittingsemiconductor nanoparticle phosphor 13.Phosphor containing particle 1 according to the first embodiment shown inFIG. 1 includessemiconductor nanoparticle phosphor 2 of only a single type and thus having a single fluorescent wavelength, whereasphosphor containing particle 11 according to the second embodiment shown inFIG. 4 includes a plurality of semiconductor nanoparticle phosphors of a type having a fluorescent wavelength and a plurality of semiconductor nanoparticle phosphors of a different type having a different fluorescent wavelength. When such a phosphor containing particle is used in combination with such a light emitting element as described later to produce a light emitting device, such devices are able to be less likely to have individual variation. Furthermore, a phosphor containing particle is able to be obtained which is able to emit light having a color improved in uniformity across the entire region. Note that whileFIG. 4 shows a case where a plurality of red fluorescent light emitting semiconductor nanoparticle phosphors and a plurality of green fluorescent light emitting semiconductor nanoparticle phosphors for a total of two types of semiconductor nanoparticle phosphors are used, still another type of semiconductor nanoparticle phosphor may be included and thus three or more types of semiconductor nanoparticle phosphors may be included. - The semiconductor nanoparticle phosphor's content (or a total amount thereof when two or more types of semiconductor nanoparticle phosphors are used) is not particularly limited, however, it is preferably within a range of 0.001 to 50 parts by weight relative to 100 parts by weight of the ionic liquid including the polymerizable functional group, more preferably within a range of 0.01 to 20 parts by weight. This is because when the semiconductor nanoparticle phosphor's content is less than 0.001 parts by weight relative to 100 parts by weight of the ionic liquid including the polymerizable functional group, light emission from the semiconductor nanoparticle phosphor has a tendency to be too week, whereas when the semiconductor nanoparticle phosphor's content exceeds 50 parts by weight relative to 100 parts by weight of the ionic liquid including the polymerizable functional group, the semiconductor nanoparticle phosphor has tendency to be difficult to disperse uniformly in the ionic liquid including the polymerizable functional group.
- Furthermore, while in
phosphor containing particle 11 in the second embodiment shown inFIG. 4 the mixing ratio of the red fluorescent light emitting semiconductor nanoparticle phosphor and the green fluorescent light emitting semiconductor nanoparticle phosphor is not particularly limited, in a weight ratio the green fluorescent light emitting semiconductor nanoparticle phosphor is preferably within a range from about 10 to about 1000 and more preferably within a range from about 20 to about 500, with the red fluorescent light emitting semiconductor nanoparticle phosphor being defined as 100. When a weight ratio of the green fluorescent light emitting semiconductor nanoparticle phosphor is lower than about 10 with the red fluorescent light emitting semiconductor nanoparticle phosphor being defined as 100, a color of light emission tends to significantly deviate from white and to be closer to red due to a difference in light emission intensity between red and green. When the weight ratio of the green fluorescent light emitting semiconductor nanoparticle phosphor exceeds 1000 with the red fluorescent light emitting semiconductor nanoparticle phosphor being defined as 100, a color of light emission tends to significantly deviate from white and to be closer to green due to a difference in light emission intensity between red and green. - (Phosphor Containing Particle According to a Third Embodiment)
-
FIG. 5 schematically shows a phosphor containing particle (a nanoparticle phosphor element/a microbead) 21 according to a third embodiment of the present invention. Note that inFIG. 5 , any portion having a configuration similar to that ofphosphor containing particle 1 according to the first embodiment shown inFIG. 1 is identically denoted and will not be described.Phosphor containing particle 21 according to the third embodiment shown inFIG. 5 is different fromphosphor containing particle 1 according to the first embodiment shown inFIG. 1 in that aresin 22 is crosslinked (i.e., the resin inphosphor containing particle 1 according to the first embodiment shown inFIG. 1 is not crosslinked). In other words, the resin in the phosphor containing particle according to the third embodiment shown inFIG. 5 is derived from an ionic liquid including a polymerizable functional group, that has a cross-linking agent added thereto. By usingresin 22 derived from an ionic liquid including a polymerizable functional group, that has a cross-linking agent added thereto, when the ionic liquid including the polymerizable functional group is polymerized, stronger solidification is able to be achieved and the wavelength converter's stability is able to be advantageously improved. Note that, thatresin 22 is crosslinked is able to be confirmed by measurement by X-ray photoelectron spectroscopy (XPS). - While the cross-linking agent may be a conventionally known, appropriate cross-linking agent and is not particularly limited, examples of the cross-linking agent include diethyleneglycol dimethacrylate and 1,1,1-trimethylol propane triacrylate. Of these, for such a reason that there are many cross-linking sites and secure polymerization is achieved, 1,1,1-trimethylol propane triacrylate is preferably used as the cross-linking agent.
- When the cross-linking agent is added, an amount of addition is not particularly restricted either, however, an amount of addition is preferably within a range from 1 to 50 parts by weight and more preferably within a range from 1 to 30 parts by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group. When an amount of addition of the cross-linking agent is smaller than 1 part by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group, a cross-linking structure does not tend to develop and strength of the resin tends to be weak. When an amount of addition of the cross-linking agent exceeds 50 parts by weight with respect to 100 parts by weight of the ionic liquid including the polymerizable functional group, the semiconductor nanoparticle phosphor does not tend to be dispersed in a stable manner.
- Note that while
FIG. 5 shows a case where, as well as inFIG. 1 , a plurality of semiconductor nanoparticle phosphors of a single type are used, in place of this, as has been shown inFIG. 4 , a plurality of red fluorescent light emitting semiconductor nanoparticle phosphors and a plurality of green fluorescent light emitting semiconductor nanoparticle phosphors for a total of two types of semiconductor nanoparticle phosphors may be used, or still another type of semiconductor nanoparticle phosphor may be included and thus three or more types of semiconductor nanoparticle phosphors may be included. - (Phosphor Containing Particle According to a Fourth Embodiment)
-
FIG. 6 schematically shows a phosphor containing particle (a nanoparticle phosphor element/a microbead) 31 according to a fourth embodiment of the present invention. Note that inFIG. 6 , any portion having a configuration similar to that ofphosphor containing particle 1 according to the first embodiment shown inFIG. 1 is identically denoted and will not be described.Phosphor containing particle 31 according to the fourth embodiment shown inFIG. 6 is different fromphosphor containing particle 1 according to the first embodiment shown inFIG. 1 in that the former has an outermost surface including atranslucent coating layer 32. Having the outermost surface including atranslucent coating layer 32 is able to reduce oxygen and moisture permeability and is consequently able to significantly reduce or prevent the semiconductor nanoparticle phosphor's photooxidation and hence degradation and further enhance its chemical stability. -
Coating layer 32 is not limited in material as long as it is translucent, however, a metal oxide, a silica-based material, or a similar translucent inorganic material is preferred. Furthermore, among these materials,coating layer 32 preferably includes an inorganic material having a band gap of 3.0 eV or more. The inorganic material of a metal oxide having a band gap of 3.0 eV or more and absorbing ultraviolet rays is exemplified for example by SiO2, ZnO, TiO2, CeO2, SnO2, ZrO2, Al2O3, ZnO:Mg, etc. Among these, ZnO, TiO2, Al2O3, CeO2, and SnO2 have a band gap close to 3.0 eV, and are thus able to absorb ultraviolet rays in a wide range (up to a range of ultraviolet rays close to visible light). Furthermore, SiO2, ZrO2, and ZnO:Mg have a band gap considerably larger than 3.0 eV, and accordingly, absorb only ultraviolet rays having a considerably short wavelength and transmit ultraviolet rays of a range close to visible light. Having an outermost surface includingcoating layer 32 including an inorganic material having a band gap of 3.0 eV or more is able to significantly reduce or prevent degradation by ultraviolet rays of the semiconductor nanoparticle phosphor and the resin including the constitutional unit derived from the ionic liquid including the polymerizable functional group and consequently enhance chemical stability. Note that in the present invention it is better if the inorganic material is an inorganic crystal. - (Phosphor Containing Particle According to a Fifth Embodiment)
-
FIGS. 7 and 8 schematically show phosphor containing particles (a nanoparticle phosphor element/a microbead) 35, 35′ according to a fifth embodiment of the present invention. Note that inFIGS. 7 and 8 , any portion having a configuration similar to that ofphosphor containing particle 1 according to the first embodiment shown inFIG. 1 is identically denoted and will not be described. - The phosphor containing particle according to a preferred embodiment of the present invention may include supports 38, 38′ to seal the matrix.
- Supports 38, 38′
coating matrix 3 are able to significantly reduce or prevent oxygen and moisture penetration into the matrix. This is able to significantly reduce or prevent the semiconductor nanoparticle phosphor's degradation caused by oxygen and moisture and hence the semiconductor nanoparticle phosphor's degradation in efficiency. - The support preferably has a thickness for example of about 0.5 nm to about 0.5 mm, more preferably about 10 nm to about 100 μm. The thickness of the support is able to be measured using a scanning electron microscope or a transmission electron microscope or the like.
- The support is not particularly limited in material as long as it is formed of a material which shields oxygen, moisture etc., and an inorganic material, a polymeric material, etc. are able to be used.
- An inorganic material excellently shields oxygen, moisture, etc. Examples of the inorganic material include silica, metal oxide, metal nitride, etc.
- The polymeric material has flexibility, and accordingly, when it is used as a material for the support, the phosphor containing particle is improved in shock resistance. Furthermore, when the support is formed on the matrix, the polymeric material is able to be formed under a milder condition than the inorganic material is, and a processing damage to the ionic liquid and semiconductor nanoparticle phosphor in the matrix is able to be significantly reduced or prevented. The polymeric material is able to be acrylate polymer, epoxide, polyamide, polyimide, polyester, polycarbonate, polythioether, polyacrylonitrile, polydien, polystyrene polybutadiene copolymer, parylene, silica-acrylate hybrid, polyetheretherketone, polyvinylidene fluoride, polyvinylidene chloride, polydivinylbenzene, polyethylene, polypropylene, polyethylene terephthalate, polyisobutylene, polyisoprene, cellulose derivative, polytetrafluoroethylene, etc.
- As shown in
FIG. 8 , support 38′ is able to be a multi-layered structure including afirst support 33 and asecond support 34. This further enhances oxygen and moisture shieldability. Note that the number of layers is not particularly limited as long as it is two layers or more, and each layer's material is also not particularly limited as long as it has oxygen and moisture shieldability. - While
FIG. 7 shows support 38 having a hollow globular structure entirely coveringmatrix 3 including the constitutional unit derived from the ionic liquid, the support's shape is not particularly limited as long as it is able to holdmatrix 3 therein. For example, it is able to be asupport 36 having a hollow capsular structure having pores penetrating from a wall surface into an internal space, as shown inFIG. 9 , aglobular support 37 having pores extending from a surface inwards, as shown inFIG. 10 , etc. These supports preferably have a pore diameter of about 20 nm or more and about 10 μm or less, more preferably about 100 nm or more and about 10 μm or less. With a pore diameter of 10 μm or less, even when a liquid matrix is sealed inside the support, flowing of the matrix out of the support is able to be significantly reduced or prevented. Furthermore, when the pore diameter is in said range, then, for example in a method in which a support such as a hollow capsule having pores is previously produced and subsequently a matrix having a semiconductor nanoparticle phosphor dispersed therein is introduced into the support to produce a nanoparticle phosphor element for producing a phosphor containing particle, the matrix having the semiconductor nanoparticle phosphor dispersed therein is able to be efficiently introduced into the support such as the hollow capsule having pores. This is because a pore diameter of 20 nm or more is larger than any semiconductor nanoparticle phosphor having a particle size of about 1 to about 20 nm preferred for the semiconductor nanoparticle phosphor and the semiconductor nanoparticle phosphor is able to easily pass through the pores, and a pore diameter of 100 nm or more allows the ionic liquid to reach a depth of penetration equivalent to 30 μm, which is a preferred particle size of the phosphor containing particle, in a short period of time of about only 0.1 second. This is derived in Lukas-Washburn equation known as an expression of capillary osmosis, assuming the ionic liquid's representative values γ=30 mNm−1, η=50 mPas, and θ=45 degrees. Note that Lukas-Washburn equation is represented as below, where 1 represents a depth of penetration of a liquid, R represents a radius of a capillary tube, γ represents a surface tension of the liquid, θ represents a contact angle of the liquid and the capillary tube, η represents a coefficient of viscosity of the liquid, and t represents time. -
- The support has a surface with an opening, which is able to be sealed after the matrix is sealed in the support.
- <Method of Producing Phosphor Containing Particle>
- Phosphor containing particle 35 of the example shown in
FIG. 7 is able to be produced using an existing capsule production method by coating the nanoparticle phosphor and the matrix with the support, for example. A specific example of the production method is indicated below. - (Producing the Semiconductor Nanoparticle Phosphor)
- The method of producing
semiconductor nanoparticle phosphor 2 is not particularly limited, and may be any production method. Preferably, a chemical synthesis method is used as the method of producingsemiconductor nanoparticle phosphor 2 as the method is a simple and is of a low cost. In the chemical synthesis method, a plurality of starting materials including elements to constitute a substance to be produced are able to be dispersed in a medium and then made to react to obtain the substance to be produced. Such a chemical synthesis method for example includes a sol gel method (a colloid method), a hot soap method, an inverted micelle method, a solvothermal method, a molecular precursor method, a hydrothermal synthesis method, a flux method, etc. Preferably, the hot soap method is used as it is able to suitably producenanoparticle core 2 a including a compound semiconductor material. Hereinafter, an example of the method of producingsemiconductor nanoparticle phosphor 2 by the hot soap method will be indicated. - Initially,
nanoparticle core 2 a is synthesized in liquid phase. For example, whennanoparticle core 2 a including InN is produced, 1-octadecene (a synthesizing solvent) is introduced into a flask or the like and tris(dimethylamino) indium and hexadecanethiol (HDT) are mixed together. The liquid mixture is then agitated sufficiently and then made to react at 180-500 degrees centigrade. Thus,nanoparticle core 2 a including InN is obtained, andnanoparticle core 2 a thus obtained has an external surface with HDT boded thereto. Note that HDT may be added aftershell layer 2 b is grown. - Preferably, the synthesizing solvent used in the hot soap method is a compound solution including a carbon atom and a hydrogen atom (hereinafter referred to as a “hydrocarbon-based solvent”). This prevents water or oxygen from being introduced into the synthesizing solvent and hence prevents oxidization of
nanoparticle core 2 a. Preferably, the hydrocarbon-based solvent is for example n-pentane, n-hexane, n-heptane, n-octane, cyclopentane, cyclohexane, cycloheptane, benzene, toluene, o-xylene, m-xylene, p-xylene or the like. - In the hot soap method, theoretically, a longer reaction time provides
nanoparticle core 2 a having a larger particle size. Accordingly, the size ofnanoparticle core 2 a is controllable to be a desired size by liquid phase synthesis while monitoring a particle size by photoluminescence, light absorption, dynamic light scattering or the like. - Then, a reaction reagent which is a source material for
shell layer 2 b is added to the solution containingnanoparticle core 2 a, and made to undergo a pyrogenetic reaction. Thus, a starting material for the semiconductor nanoparticle phosphor is obtained. The starting material for the semiconductor nanoparticle phosphor thus obtained hasnanoparticle core 2 a with an external surface covered withshell layer 2 b, and has HDT bonded to an external surface ofshell layer 2 b. - Subsequently, a modifying organic compound is added to the solution containing the starting material for the semiconductor nanoparticle phosphor, and made to react at a temperature of from room temperature to 300 degrees centigrade. This resolves the bond of the external surface of
shell layer 2 b and HDT, and the modifying organic compound is bonded to the external surface ofshell layer 2 b to form modifying organic modifyinggroup 6. Thus,semiconductor nanoparticle phosphor 2 is obtained. - Note that when producing
nanoparticle core 2 a, the modifying organic compound may be added instead of HDT. Whensemiconductor nanoparticle phosphor 2 is thus obtained, the modifying organic compound may not be added aftershell layer 2 b is formed. - (Producing the Support)
-
Semiconductor nanoparticle phosphor 2 thus obtained is dispersed in a matrix including an ionic liquid as a major component. The volume ratio of the semiconductor nanoparticle phosphor to the resin is able to have a value depending on how the light emitting device is used, and preferably it is 0.000001 or more and 10 or less for example. According to this, the semiconductor nanoparticle phosphor is less likely agglomerate and is dispersible in the resin more uniformly. - Subsequently,
matrix 3 havingsemiconductor nanoparticle phosphor 2 dispersed therein is introduced into a solution including a material for the support and thereafter a process for precipitating the support's material is performed. Thus, a phosphor containing particle in whichmatrix 3 has a surface covered with the support is able to be obtained. - When the diameter of the phosphor containing particle is 100 μm or less,
matrix 3 havingsemiconductor nanoparticle phosphor 2 dispersed therein that for example has undergone a process using a homogenizer etc. and thus been emulsified (or made fine) is able to be introduced into the solution including the material for the support. Furthermore, when the diameter of the phosphor containing particle is 100 μm or more,matrix 3 havingsemiconductor nanoparticle phosphor 2 dispersed therein is not subjected to the emulsification process and is instead able to be directly introduced via a syringe etc. into the solution including the material for the support. The thickness of the support is controllable by the period of time, temperature and pH of the process for precipitating the support's material, the concentration of the support's material, etc. - Note that, in the above described production method, the ionic liquid in
matrix 3 maintains a liquid state. By causing the ionic liquid to undergo a condensation reaction and curing and resinifying (or solidifying) it to form a resin including a constitutional unit derived from the ionic liquid, a phosphor containing particle in whichmatrix 3 includes the resin including the constitutional unit derived from the ionic liquid is able to be obtained. The curing can be done by a photo-curing method exposing the intermediate product to ultraviolet rays and thus curing it, a thermosetting method applying heat to the intermediate product and thus curing it, etc. - Other than the above production method, the phosphor containing particle is also be able to be produced for example in such a manner that a hollow capsule having pores is previously produced and subsequently a matrix having a semiconductor nanoparticle phosphor dispersed therein is introduced into the hollow capsule, and the ionic liquid is subjected to a curing process if necessary. According to this method, after the hollow capsule is produced, the matrix having the semiconductor nanoparticle phosphor dispersed therein is introduced into the hollow capsule, so that the phosphor containing particle is able to be produced without a hollow capsule production process giving a processing damage to the semiconductor nanoparticle phosphor or the matrix having the semiconductor nanoparticle phosphor dispersed therein.
- <Light Emitting Device>
- (Light Emitting Device According to a Sixth Embodiment)
-
FIG. 11 schematically shows alight emitting device 41 according to a sixth embodiment of the present invention. As shown inFIG. 11 , a preferred embodiment of the present invention also provides a light emitting device (an LED package) 41 including alight source 42 and a wavelength converter in whichphosphor containing particle 1 according to preferred embodiments of the present invention as described above is dispersed in atranslucent medium 43. As has been set forth above, the phosphor containing particle according to a preferred embodiment of the present invention is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process. In the light emitting device shown inFIG. 11 , components other thanphosphor containing particle 1, i.e.,light source 42,translucent medium 43, aframe body 44, alead wire 45, etc. are not particularly limited and are able to be conventionally known, appropriate components. - Note that while
FIG. 11 shows a case wherephosphor containing particle 1 according to the first embodiment shown inFIG. 1 is used, this is not exclusive, andphosphor containing particles FIG. 4 toFIG. 8 may be used or three or more types of semiconductor nanoparticle phosphors may be included. - In the light emitting device according to a preferred embodiment of the present invention, the light source is not particularly limited and is able to be a light emitting diode (LED), a laser diode (LD), etc.
- In light emitting
device 41 according to a preferred embodiment of the present invention, the translucent medium for sealing the light source and the phosphor containing particle (a sealing material) is not particularly limited, however, a glass material or a macromolecular material is preferably used. As the glass material, tetramethoxy silane (TMOS), tetraethoxysilane (TEOS), tetrapropoxysilane, tetrabutoxysilane, etc. are able to be used for example. As the macromolecular material is able to be used a resin including a constitutional unit derived from an ionic liquid including acrylic resin such as polymethylmethacrylate (PMMA), epoxy resin including bisphenol A and epichlorohydrin, etc., MOE-200T (2-(methacryloyloxy)-ethyltrimethyl ammonium bis(trifluoromethane sulfonyl)imide), and 1-(3-acryloyloxy-propyl)-3-methylimidazolium bis(trifluoromethanesulfonyl) imide etc. Other then the above, epoxy, silicone and (meth)acrylate, silica glass, silica gel, siloxane, sol-gel, hydrogel, agarose, cellulose, epoxy, polyether, polyethylene, polyvinyl, polydiacetylene, polyphenylene vinylene, polystyrene, polypyrrole, polyimide, polyimidazole, polysulfone, polythiophene, polyphosphate, poly(meth)acrylate, polyacrylamide, polypeptide, polysaccharide, or a combination thereof may be used as the translucent medium. - The volume ratio of the phosphor containing particle to the medium is able to have a value depending on how the light emitting device is used, and preferably it is 0.000001 or more and 10 or less for example. When the light emitting device's translucency is regarded as important, it is preferable that the volume ratio of the semiconductor nanoparticle phosphor to the medium is 0.2 or less. The volume ratio of 0.2 or less allows the light emitting device to have high translucency. Furthermore, when the quantity of light emitted by the light emitting device is regarded as important, it is preferable that the volume ratio of the nanoparticle phosphor to the medium is 0.00001 or more. The volume ratio of 0.00001 or more allows the light emitting device to emit a large quantity of light.
- The medium contains preferably 80% by volume or more, more preferably 90% by volume or more of the glass material or macromolecular material. When the medium contains 80% by volume or more of the glass material or macromolecular material, a highly transparent or highly efficiently light emitting device is able to be provided, and when the matrix contains 90% by volume or more of the material, a further highly transparent or further highly efficiently light emitting device is able to be provided.
- What type of phosphor containing particle and what type of medium are combined is not particularly limited, and is able to be selected depending on how the light emitting device is used.
- (Light Emitting Device According to a Seventh Embodiment)
-
FIG. 12 schematically shows alight emitting device 51 according to a seventh embodiment of the present invention. Note that inFIG. 12 , any portion having a configuration similar to that of light emittingdevice 41 according to the sixth embodiment shown inFIG. 11 is identically denoted and will not be described.Light emitting device 51 according to the seventh embodiment shown inFIG. 12 is different from light emittingdevice 41 according to the sixth embodiment shown inFIG. 11 in that the former includes aphosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, and aphosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group. - As has been set forth above, the phosphor containing particle according to a preferred embodiment of the present invention is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process. According to light emitting
device 51 according to the seventh embodiment, by producing a light emitting device in a process similar to that for a conventional phosphor, and furthermore, using a phosphor containing particle including semiconductor nanoparticle phosphors having different wavelengths, a light emitting device which emits light in a desired color is able to be produced. Note that when, as in light emittingdevice 51 according to the seventh embodiment,phosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, andphosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group are used in combination, a light emitting device exhibiting white light emission of high color reproducibility is able to be obtained. Therefore, a light emitting diode (LED) which emits blue light and a laser diode (LD) which emits blue light are able to be suitably used. - Note that while in light emitting
device 51 shown inFIG. 12 , the mixing ratio ofphosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group andphosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group is not particularly limited, in a weight ratio,phosphor containing particle 53 is preferably within a range from about 10 to about 1000 and more preferably within a range from about 20 to about 500, withphosphor containing particle 52 being defined as 100. This is because when a weight ratio ofphosphor containing particle 53 is lower than about 10 withphosphor containing particle 52 being defined as 100, a color of light emission tends to significantly deviate from white and to be closer to red due to a difference in light emission intensity between red and green, and when the weight ratio ofphosphor containing particle 53 exceeds 1000 withphosphor containing particle 52 being defined as 100, a color of light emission tends to significantly deviate from white and to be closer to green due to a difference in light emission intensity between red and green. - (Light Emitting Device According to an Eighth Embodiment)
-
FIG. 13 schematically shows alight emitting device 61 according to an eighth embodiment of the present invention. Note that inFIG. 13 , any portion having a configuration similar to that of light emittingdevice 41 according to the sixth embodiment shown inFIG. 11 is identically denoted and will not be described.Light emitting device 61 according to the eighth embodiment shown inFIG. 13 is different from light emittingdevice 41 according to the sixth embodiment shown inFIG. 11 in that in a medium 43,phosphor containing particle 1 according to a preferred embodiment of the present invention and in addition thereto aphosphor 62 other than the semiconductor nanoparticle phosphor (a phosphor of a conventional type) are dispersed. Thus, in the present invention, a phosphor containing particle according to a preferred embodiment of the present invention and a phosphor of a conventional type may be combined together to provide a light emitting device which emits light in a desired color. - Such a
phosphor 62 of a conventionally type for example includes α-sialon phosphor, β-sialon phosphor, JEM blue phosphor (LaAl(Si6-zAlz) N10-zOz), a γ-AlON phosphor or a similar rare earth activated oxynitride phosphor, a YAG:Ce based phosphor or a similar oxide phosphor, a CASN phosphor (CaAlSiN3) or a similar nitride phosphor or a similar inorganic phosphor, a soluble azo pigment, an insoluble azo pigment, a benzimidazolone pigment, a β naphthol pigment, a naphthol AS pigment, a condensed azo pigment or a similar azo based pigment, a phthalocyanine pigment, a quinacridone pigment, a perylene pigment, an isoindolinone pigment, an isoindoline pigment, a dioxazine pigment, a thioindigo pigment, an anthraquinone pigment, a quinophthalone pigment, a metal complex pigment, a diketo-pyrrolo-pyrrole pigment or a similar polycyclic pigment, a dye lake pigment or a similar organic coloring matter etc., and is not particularly limited. Inter alia, in order to implement high chemical stability and a high color rendering property, an inorganic phosphor is preferably used asphosphor 62 of the conventionally type. - In light emitting
device 61 according to the eighth embodiment, the mixing ratio ofphosphor containing particle 1 and the phosphor of the conventionally type is not particularly limited, either, and although depending on the type of the semiconductor nanoparticle phosphor used and that of the phosphor of the conventionally type used, when the semiconductor nanoparticle phosphor included in the phosphor containing particle is CdSe and the phosphor of the conventionally type is a β-sialon phosphor, then, in a weight ratio, the phosphor of the conventionally type is preferably within a range from about 10 to about 1000 and more preferably within a range from about 20 to about 500, with the phosphor containing particle being defined as 100. - Note that while
FIG. 13 shows a case wherephosphor containing particle 1 according to the first embodiment shown inFIG. 1 is used, this is not exclusive, andphosphor containing particles FIG. 4 toFIG. 8 may be used or three or more types of semiconductor nanoparticle phosphors may be included. -
FIG. 14 shows the light emitting device of the example shown inFIG. 11 such that it is partially enlarged, andFIG. 15 shows an exemplary variation of the light emitting device shown inFIG. 14 . As shown inFIG. 15 , alight emitting device 41′ may have a multi-layered structure including a firstlight emitting layer 47 a in which a firstnanoparticle phosphor element 1 a is dispersed inmedium 43, and a secondlight emitting layer 47 b in which a secondnanoparticle phosphor element 1 b is dispersed inmedium 43. For example when a blue light emitting LED chip is used aslight source 42 and thereon secondlight emitting layer 47 b including secondnanoparticle phosphor element 1 b using a red light emitting nanoparticle phosphor (a red light emitting layer) and firstlight emitting layer 47 a including firstnanoparticle phosphor element 1 a using a green light emitting nanoparticle phosphor (a green light emitting layer) are deposited in said order, resorption of energy from firstlight emitting layer 47 a (the green light emitting layer) to secondlight emitting layer 47 b (the red light emitting layer) is less likely to occur, and light emittingdevice 41′ emits light satisfactorily efficiently. - <Method of Producing the Light Emitting Device>
- When
phosphor containing particle 1 is sealed inmedium 43,phosphor containing particle 1 is dispersed inmedium 43 and thereafter a curing process is performed. - When the glass material is used as medium 43 a solution in which the glass material and
phosphor containing particle 1 are mixed together is agitated to dispersephosphor containing particle 1 in the glass material. Then, the glass material is made to undergo condensation reaction and thus cured. In order to accelerate the condensation reaction, heat, an acid or a base and/or the like may be applied to the system. - When the macromolecular material is used as medium 43 a solution in which the macromolecular material and
phosphor containing particle 1 are mixed together is agitated to dispersephosphor containing particle 1 in the macromolecular material. Then, the macromolecular material is made to undergo condensation reaction and thus cured and resinified (or solidified). The curing can be done by a photo-curing method exposing the intermediate product to ultraviolet rays and thus curing it, a thermosetting method applying heat to the intermediate product and thus curing it, etc. - An example of the method of producing the light emitting device which has the multi-layered structure will be described below. Although a case of a light emitting device which has a 2-layer structure will be described below, a light emitting device having a structure of 3 or more layers is able to also be produced basically in a similar method. Initially, two types of phosphor containing particles which have different sizes are prepared. A solution of these two types of phosphor containing particles is mixed into an acrylic resin material and the mixture is dropped on a blue light emitting LED chip, and subsequently, a heating and curing process is performed. While being heated and thus cured, phosphor containing particles having a large particle size sediment after a period of time has elapsed, and as a light emitting device a 2-layer structure including a lower layer including phosphor containing particles mainly having a large particle size and an upper layer including phosphor containing particles mainly having a small particle size is formed.
- The above production method is able to eliminate a complicated process such as forming each layer independently and allows the production process to be simplified.
- <Phosphor Containing Sheet>
- (Phosphor Containing Sheet According to a Ninth Embodiment)
-
FIG. 16 schematically shows aphosphor containing sheet 71 according to a ninth embodiment of the present invention. The present invention, as shown inFIG. 16 , also providesphosphor containing sheet 71 in whichphosphor containing particle 1 according to a preferred embodiment of the present invention is dispersed in a sheet-liketranslucent medium 72. As has been set forth above, the phosphor containing particle according to a preferred embodiment of the present invention is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process. Accordingly, a phosphor containing sheet is able to be produced, likephosphor containing sheet 71 according to the ninth embodiment shown inFIG. 16 , in a production process similar to that for a conventional phosphor. Such a phosphor containing sheet according to a preferred embodiment of the present invention is able to be suitably applied to a liquid crystal back light, a white light LED device, etc. similarly as conventional. - Furthermore, the phosphor containing sheet using the phosphor containing particle according to a preferred embodiment of the present invention alleviates a constraint on a material for a medium in which the phosphor containing particle is dispersed, and thus provides an increased degree of freedom in selecting the material for the medium for the following grounds (1) and (2):
- (1) In contrast to a semiconductor nanoparticle phosphor resinified in an uncovered state, as conventional, according to the present invention, a semiconductor nanoparticle phosphor may be resinified in a state in which it is included in a phosphor containing particle and thus protected thereby, and it is unnecessary to care about degradation of the semiconductor nanoparticle phosphor at the time of production; and
- (2) In contrast to an uncovered semiconductor nanoparticle phosphor included in a medium, as conventional, according to the present invention, a semiconductor nanoparticle phosphor is used in a state where it is protected by a phosphor containing particle, and it is unnecessary to care about degradation of the semiconductor nanoparticle phosphor in use.
- Furthermore, as it is unnecessary to care about degradation of the semiconductor nanoparticle phosphor in use, a portion for protecting the sheet is unnecessary, and a space is able to also be saved. In other words, a portion for protection which has conventionally been essential in order to prevent moisture and oxygen which are a cause of degradation of a semiconductor nanoparticle phosphor in an uncovered state is able to be dispensed with and thus the sheet is able to be reduced in thickness. More specifically, it is unnecessary to provide an edge portion (or it is able to be reduced), and accordingly, a space is able to be saved in a planar direction, and it is unnecessary to provide a protective layer for protection (or it is able to be reduced), and accordingly, a space is able to be saved in the thickness direction.
- As translucent medium 72 used for the phosphor containing sheet according to a preferred embodiment of the present invention, a medium similar to translucent medium 43 described above for a light emitting device according to a preferred embodiment of the present invention is able to be suitably used. Furthermore, a method of forming into a sheet the translucent medium in which the phosphor containing particle according to a preferred embodiment of the present invention is dispersed is similar to that of producing a conventional phosphor containing sheet, e.g., initially as a coating liquid for forming a phosphor sheet a solution in which phosphor containing particles are dispersed in a resin (hereinafter referred to as a “sheet producing, phosphor containing particle dispersed silicone resin”) is produced. The sheet producing, phosphor containing particle dispersed silicone resin is obtained by mixing the phosphor containing particles and the resin. When an addition reaction type silicone resin is used, and a compound containing an alkenyl group bonded to a silicon atom and a compound having a hydrogen atom bonded to a silicon atom are mixed, a curing reaction may start even at room temperature, and accordingly, a hydrosilylating reaction retarding agent such as an acetylene compound may be blended with the sheet producing, phosphor containing particle dispersed silicone resin to extend pot life. Furthermore, it is also possible to mix a dispersant, a leveling agent etc. as an additive for stabilizing the coating film, an adhesion assisting agent etc. such as a silane coupling agent, etc. as a modifier for a surface of the sheet, etc. with the sheet producing, phosphor containing particle dispersed silicone resin. Furthermore, it is also possible to mix fine alumina particles, fine silica particles, fine silicone particles, etc. with the sheet producing, phosphor containing particle dispersed silicone resin as a phosphor sedimentation suppressor.
- A solvent may be added to provide a solution to make flowability appropriate, if necessary. The solvent is not particularly limited as long as it is able to adjust the resin in a flowing state in viscosity. For example, toluene, methyl ethyl ketone, methyl isobutyl ketone, hexane, terpineol, etc. are mentioned.
- After these components are blended to provide a prescribed composition, a homogenizer, a self-revolving agitator, a triple roller, a ball mill, a planetary ball mill, a bead mill or a similar agitator and kneader is used for uniform mixture and dispersion to obtain the sheet producing, phosphor containing particle dispersed silicone resin. After or during the mixture and dispersion, degassing in a vacuum or a decompressed condition is also preferably performed.
- Subsequently, the sheet producing, phosphor containing particle dispersed silicone resin is applied on a base member and dried. The resin is able to be applied with a reverse roll coater, a blade coater, a slit-die coater, a direct gravure coater, an offset gravure coater, a kis coater, a natural roll coater, an air knife coater, a roll blade coater, baribar roll blade coater, a two stream coater, a rod coater, a wire bar coater, an applicator, a dip coater, a curtain coater, a spin coater, a knife coater etc. Furthermore, a phosphor sheet according to a preferred embodiment of the present invention is also be able to be produced using printing methods such as screen printing, photogravure, planography. When using a printing method, screen printing is preferably used.
- The sheet is able to be dried using a general heating device such as a hot air dryer and an infra-red dryer. The sheet is able to be heated and cured using a general heating device such as a hot air dryer and an infra-red dryer. In that case, the sheet is heated and cured normally at 40 to 250° C. for 1 minute to 5 hours, preferably at 100° C. to 200° C. for 2 minutes to 3 hours.
- Note that while
FIG. 16 shows a case wherephosphor containing particle 1 according to the first embodiment shown inFIG. 1 is used, this is not exclusive, andphosphor containing particles FIG. 4 toFIG. 8 may be used or three or more types of semiconductor nanoparticle phosphors may be included. - (Phosphor Containing Sheet According to a Tenth Embodiment)
-
FIG. 17 schematically shows aphosphor containing sheet 81 according to a tenth embodiment of the present invention. Note that inFIG. 17 , any portion having a configuration similar to that ofphosphor containing sheet 71 according to the ninth embodiment shown inFIG. 16 is identically denoted and will not be described.Phosphor containing sheet 81 according to the tenth embodiment shown inFIG. 17 differs fromphosphor containing sheet 71 according to the ninth embodiment shown inFIG. 16 in that former includesphosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group andphosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group. - As has been set forth above, the phosphor containing particle according to a preferred embodiment of the present invention is good in handleability, and by producing it in a size approximately the same as a currently used phosphor, it is able to be used in a form similar to that of a currently commercially used phosphor without changing a currently used process. According to
phosphor containing sheet 81 according to the tenth embodiment, by producing a phosphor containing sheet in a process similar to that for a conventional phosphor, and furthermore, using a phosphor containing particles including semiconductor nanoparticle phosphors having different wavelengths, and by combining the same with an appropriate light source, a phosphor containing sheet which allows light to be emitted in a desired color is able to be produced. Note that when, as inphosphor containing sheet 81 according to the tenth embodiment,phosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group andphosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group are used in combination, a light emitting device exhibiting white light emission of high color reproducibility is able to be obtained. Therefore, a light emitting diode (LED) which emits blue light and a laser diode (LD) which emits blue light are able to be combined as a light source suitably and thus used. - Note that while in
phosphor containing sheet 81 shown inFIG. 17 , the mixing ratio ofphosphor containing particle 52 in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group andphosphor containing particle 53 in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group is not particularly limited, in a weight ratio,phosphor containing particle 53 is preferably within a range from about 10 to about 1000 and more preferably within a range from about 20 to about 500, withphosphor containing particle 52 being defined as 100. This is because when a weight ratio ofphosphor containing particle 53 is lower than about 10 withphosphor containing particle 52 being defined as 100, a color of light emission tends to significantly deviate from white and to be closer to red due to a difference in light emission intensity between red and green, and when the weight ratio ofphosphor containing particle 53 exceeds 1000 withphosphor containing particle 52 being defined as 100, a color of light emission tends to significantly deviate from white and to be closer to green due to a difference in light emission intensity between red and green. - (Phosphor Containing Sheet According to an Eleventh Embodiment)
-
FIG. 18 schematically shows aphosphor containing sheet 91 according to an eleventh embodiment of the present invention. Note that inFIG. 18 , any portion having a configuration similar to that ofphosphor containing sheet 71 according to the ninth embodiment shown inFIG. 16 is identically denoted and will not be described.Phosphor containing sheet 91 according to the eleventh embodiment shown inFIG. 18 differs fromphosphor containing sheet 71 according to the ninth embodiment shown inFIG. 16 in that in a medium 72,phosphor containing particle 1 according to a preferred embodiment of the present invention and in addition theretophosphor 62 other than the semiconductor nanoparticle phosphor (a phosphor of a conventional type) are dispersed. Thus, in the present invention, a phosphor containing particle according to a preferred embodiment of the present invention and a phosphor of a conventional type may be combined together and furthermore combined with an appropriate light source to provide a light emitting device which emits light in a desired color. - As
phosphor 62 of the conventionally type a phosphor similar to that described above for light emittingdevice 61 according to the eighth embodiment is able to be suitably used. Furthermore, the mixing ratio ofphosphor containing particle 1 and the phosphor of the conventionally type is not particularly limited, either, and it is as has been described above as a suitable example. - Note that while
FIG. 18 shows a case wherephosphor containing particle 1 according to the first embodiment shown inFIG. 1 is used, this is not exclusive, andphosphor containing particles FIG. 4 toFIG. 8 may be used or three or more types of semiconductor nanoparticle phosphors may be included. - The present invention will now be more specifically in examples. Note, however, that these examples do not limit the present invention. Hereinafter, “A/B” represents that A is covered with B.
- Example 1 presents a phosphor containing particle in which the nanoparticle core is InP, the shell layer is ZnS, the organic modifying group is dimethylamino ethanethiol (DAET), the matrix is a resin including a constitutional unit derived from MOE-200T, and the support is silica (the semiconductor nanoparticle phosphor: InP/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica).
- (Producing the Phosphor Containing Particle)
- An octadecene (ODE) solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared. This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with DAET, and was moved into an MOE-200T solvent.
- Subsequently, a hollow silica capsule having pores having an average particle size of about 10 μm was prepared. Specifically, initially, an aqueous phase adjusted so that an aqueous solution of 30% sodium silicate and an aqueous solution of polymethylmethacrylate were 0.42 g/ml and 0.14 g/ml, respectively (a W1 phase), an n-hexane phase adjusted so that Tween 80 (polyoxyethylene sorbitan monooleate) and Span 80 (sorbitan monooleate) were 0.014 g/ml and 0.007 g/ml, respectively (an O phase), and an aqueous phase adjusted so that ammonium hydrogencarbonate was 0.16 g/ml (a W2 phase) were prepared. The W1 phase was add to the O phase and subsequently they were emulsified with a homogenizer at a rotation speed of 8000 rpm to produce a W1/O phase, which was immediately added to the W2 phase and agitated with a magnetic stirrer at 35° C. for 2 hours. Subsequently, water or ethanol was added to the solution which was in turn centrifuged and subjected to an operation repeatedly to remove a supernatant and washed, and thereafter filtrated to obtain a precipitate. Subsequently, the precipitate was dried at 100° C. for 12 hours and then baked at 700° C. for 5 hours to obtain a hollow silica capsule having pores having an average particle size of about 10 μm.
- The obtained hollow silica capsule and the semiconductor nanoparticle phosphor containing MOE-200T were mixed together and vacuumed to introduce the MOE-200T solution into the capsule. And a silica source material was dropped and dried to close the pores on the surface of the capsule. Finally, the intermediate product was heated at 80° C. to polymerize and thus resinify the MOE-200T. The obtained phosphor containing particle has the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica.
- (Producing the Light Emitting Device)
- The obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- (Observation Result)
-
FIG. 19 is an optical microscopic image obtained when the phosphor containing particle of the present example is irradiated with excitation light having a wavelength of 405 nm. InFIG. 19 , it can be confirmed that the phosphor containing particle emits red light. Furthermore, in the phosphor containing particle's EDX composition analysis result, neither a resin including a constitutional unit derived from an ionic liquid nor a component of the semiconductor nanoparticle phosphor is detected, and It can be said that on the surface of the phosphor containing particle, neither a resin including a constitutional unit derived from an ionic liquid nor the semiconductor nanoparticle phosphor is present. That is, it is believed that the light emission is attributed to the semiconductor nanoparticle phosphor in the resin including the constitutional unit derived from the ionic liquid, that is present inside the phosphor containing particle. Note that from theFIG. 20 cross-sectional SEM analysis result the hollow silica capsule's layer has a thickness of about 1 μm, which an EDX electron beam substantially cannot penetrate, and accordingly, the particle's internal elements are not detected by EDX. - (Performance Assessment)
- The obtained light emitting device underwent a lighting test and a heat resistance test. In the lighting test, the light emitting device was let to absorb excitation light having a wavelength of 405 nm and emit fluorescent light and the emission's intensity was measured, and the ratio of the number of emitted photons to the number of absorbed photons was presented as emission efficiency. In the heat resistance test, the light emitting device was heated in an electric furnace at 120° C. for a fixed period of time and subsequently subjected to measurement of quantum efficiency.
- (Result)
- The light emitting device of the present example, as observed for change over time in the lighting test, presented satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time. Furthermore, a result of the heat resistance test showed that the light emitting device maintained satisfactory quantum efficiency.
- A light emitting device having a semiconductor nanoparticle phosphor similar to that of Example 1 dispersed directly into a matrix was used as comparative example 1 (the light emitting device: a semiconductor nanoparticle phosphor/acrylic resin).
- (Producing the Light Emitting Device)
- An ODE solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared. This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with DAET and a semiconductor nanoparticle phosphor was thus obtained. Then the semiconductor nanoparticle phosphor was centrifuged an dried to be powder which was in turn mixed into acrylic resin to obtain a mixture which was in turn dropped on a blue LED chip and the acrylic resin was cured to produce an LED light emitting device.
- (Performance Assessment)
- The obtained light emitting device underwent a lighting test and a heat resistance test similarly as done in Example 1.
- (Result)
- When the light emitting device of the present comparative example was compared with that of Example 1, the former presented poor initial quantum efficiency and the heat resistance test also indicated the former presented a large degree of degradation of efficiency over time.
- (Discussion)
- In comparative example 1, the semiconductor nanoparticle phosphor was directly mixed into a general resin such as acryl, which causes the semiconductor nanoparticle phosphor to agglomerate, which is a cause of reduction in efficiency, and the light emitting device was impaired in efficiency. Furthermore, in a general resin such as acryl, the organic modifying group on the surface of the semiconductor nanoparticle phosphor easily detaches, which is a cause of degradation of the semiconductor nanoparticle phosphor, and the light emitting device was impaired in efficiency. Furthermore, a general resin such as acryl allows oxygen and moisture to permeate therethrough to some extent. Oxygen and moisture are a cause of degradation of the semiconductor nanoparticle phosphor, and the light emitting device's efficiency was decreased as time elapses.
- Example 1A presents a nanoparticle phosphor element was prepared in which the nanoparticle core includes CdSe, the shell layer includes ZnS, the organic modifying group includes dimethylamino ethanethiol (DAET), the matrix includes a resin including a constitutional unit derived from MOE-200T, and the support includes silica (the semiconductor nanoparticle phosphor: CdSe/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica).
- (Producing the Phosphor Containing Particle)
- A toluene solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes CdSe and the shell layer includes ZnS was prepared, and this semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment for substitution with DAET, and was moved into an MOE-200T solvent. Subsequently, a phosphor containing particle having the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica was produced similarly as done in Example 1.
- (Producing the Light Emitting Device)
- The obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- (Performance Assessment)
- The obtained light emitting device underwent a lighting test similarly as done in Example 1.
- (Result)
- The light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- (Discussion)
- In the present example, the semiconductor nanoparticle phosphor has the configuration of CdSe/ZnS/DAET. It can be seen from Example 1 and Example 1A that in the phosphor containing particle, the semiconductor nanoparticle phosphor's core/shell structure is not limited to a single type and is able to be selected as appropriate. This increases a degree of freedom in design in producing the semiconductor nanoparticle phosphor and the phosphor containing particle.
- Example 2 presents the phosphor containing particle of Example 1 with the support including polyamidoimide resin rather than silica (the semiconductor nanoparticle phosphor: InP/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/polyamidoimide resin).
- (Producing the Phosphor Containing Particle)
- An ODE solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared. This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with DAET, and was moved into an MOE-200T solvent. The semiconductor nanoparticle phosphor containing MOE-200T solvent was mixed with a solution in which a polyamidoimide resin material was dissolved, and the mixture was heated and agitated to resinify MOE-200T and also form the polyamidoimide resin to surround MOE-200T. The obtained phosphor containing particle has the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/polyamidoimide resin.
- (Producing the Light Emitting Device)
- The obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- (Performance Assessment)
- The obtained light emitting device underwent a lighting test similarly as done in Example 1.
- (Result)
- The light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- (Discussion)
- Polyamidoimide resin is able to reduce permeation of oxygen and moisture to some extent, and secular degradation of the semiconductor nanoparticle phosphor was able to be significantly reduced or prevented. Furthermore, when the support is directly formed on the resin including the constitutional unit derived from the ionic liquid by a chemical, physicochemical, or mechanical methodology or the like, a polymeric support is able to be formed under a relatively milder processing condition than a support including silica or a similar inorganic substance, and is thus able to advantageously reduce a processing damage to the resin including the constitutional unit derived from the ionic liquid and the semiconductor nanoparticle phosphor. Furthermore, a polymeric material is more flexible than an inorganic material, and is thus advantageously less crackable and has excellent shock resistance.
- Example 3 presents the semiconductor nanoparticle phosphor of Example 1 with the organic modifying group including carboxydecanethiol (CDT) rather than DAET (the nanoparticle phosphor: InP/ZnS/CDT, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica).
- (Producing the Phosphor Containing Particle)
- An ODE solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared. This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with CDT, and was moved into an MOE-200T solvent. Subsequently, a phosphor containing particle having the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica was produced in a method similar to that used in Example 1.
- (Producing the Light Emitting Device)
- The obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- (Performance Assessment)
- The obtained light emitting device underwent a lighting test similarly as done in Example 1.
- (Result)
- The light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- (Discussion)
- In the present example, CDT including a polar group (a carboxyl group) was used as the organic modifying group, and accordingly, the semiconductor nanoparticle phosphor had satisfactory dispersibility into the ionic liquid. It can be seen from the present example that the organic modifying group is not limited to an ionic organic modifying group and is able to be an organic modifying group including a polar functional group. This increases a degree of freedom in design in producing the semiconductor nanoparticle phosphor and the phosphor containing particle.
- Example 4 presents the phosphor containing particle of Example 1 with the support having a 2-layer structure including polyamidoimide resin and silica rather than (a monolayer of) silica (the semiconductor nanoparticle phosphor: InP/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/polyamidoimide resin/silica).
- (Producing the Phosphor Containing Particle)
- An ODE solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes InP, the shell layer includes ZnS and the organic modifying group includes hexadecanethiol (HDT) was prepared. This semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment to substitute HDT with DAET, and was moved into an MOE-200T solvent. The semiconductor nanoparticle phosphor containing MOE-200T solvent was mixed with a solution in which a polyamidoimide resin material was dissolved, and the mixture was heated and agitated to resinify MOE-200T and also form the polyamidoimide resin to surround MOE-200T. Subsequently, a silica source material was dropped and thereafter a silica layer formation reaction was performed in a basic atmosphere for a fixed period of time and a washing and drying treatment was performed to form a silica layer to surround the polyamidoimide resin. The obtained phosphor containing particle has the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/polyamidoimide resin/silica.
- (Producing the Light Emitting Device)
- The obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- (Performance Assessment)
- The obtained light emitting device underwent a lighting test similarly as done in Example 1.
- (Result)
- The light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- (Discussion)
- In the present example, the support is a multilayer, and accordingly it is able to satisfactorily reduce or prevent permeation of oxygen and moisture, and secular degradation of the semiconductor nanoparticle phosphor is able to be significantly reduced or prevented. Furthermore, since the silica layer formation process is performed under the basic condition after the resin including the constitutional unit derived from the ionic liquid is covered with a polymeric support, the resin including the constitutional unit derived from the ionic liquid is able to be protected from the base. This is able to reduce a processing damage to the ionic liquid and the semiconductor nanoparticle phosphor in forming the silica layer.
- Example 5 presents a light emitting device having a 2-layer structure produced using two types of phosphor containing particles.
- (Producing a Red Light Emitting Phosphor Containing Particle)
- A method similar to that used in Example 1 was used to produce a phosphor containing particle having a structure of InP/ZnS/DAET/silica. This phosphor containing particle had a light emission peak wavelength in the red spectrum region.
- (Producing a Green Light Emitting Phosphor Containing Particle)
- A method similar to that used in Example 1 was used to produce a phosphor containing particle having a structure of InP/ZnS/DAET/silica. This phosphor containing particle had a light emission peak wavelength in the green spectrum region.
- Note that the red light emitting semiconductor nanoparticle phosphor has a larger particle size than the green light emitting semiconductor nanoparticle phosphor, and a red light emitting nanoparticle phosphor element also has a larger particle size than a green light emitting nanoparticle phosphor element.
- (Producing the Light Emitting Device)
- A solution including these two types of phosphor containing particles was mixed into an acrylic resin material and the mixture was dropped on a blue light emitting LED chip, and subsequently, a heating and curing process was performed. While being heated and thus cured, a red light emitting nanoparticle phosphor device having a large particle size sedimented after a period of time has elapsed, and as a light emitting device a 2-layer structure was formed which included a lower layer mainly including red light emitting phosphor containing particles and an upper layer mainly including green light emitting phosphor containing particles.
- (Performance Assessment)
- The obtained light emitting device underwent a lighting test similarly as done in Example 1.
- (Result)
- The light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- (Discussion)
- The structure of the light emitting device of the present example (a structure in which a blue light emitting LED chip light source, a red light emitting layer, and a green light emitting layer deposited in said order) is less likely to cause resorption of energy from the green light emitting layer to the red light emitting layer, and thus has better light emission efficiency as an LED light emitting device. Furthermore, the difference in size between the green light emitting phosphor containing particle and the red light emitting phosphor containing particle is able to be exploited so that after they are mixed into acrylic resin they are able to be left to allow the particles having the larger size to sediment to form a 2-layer structure. This is able to eliminate a complicated process such as forming the green light emitting layer and the red light emitting layer independently and thus allows the production process to be simplified.
- Example 6 presents the phosphor containing particle of Example 1A with the matrix of the resin including the constitutional unit derived from MOE-200T replaced with an ionic liquid including a constitutional unit derived from DEME (the semiconductor nanoparticle phosphor: CdSe/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/DEME/silica).
- (Producing the Phosphor Containing Particle)
- Specifically, a toluene solution of a semiconductor nanoparticle phosphor in which the nanoparticle core includes CdSe and the shell layer includes ZnS was prepared, and this semiconductor nanoparticle phosphor underwent an organic modifying group substitution treatment for substitution with DAET, and was moved into a DEME solvent. Subsequently, a phosphor containing particle having the configuration of the semiconductor nanoparticle phosphor/the ionic liquid including the constitutional unit derived from DEME/silica was produced similarly as done in Example 1, except that the step of heating at 80° C. to resinify the ionic liquid was not performed.
- (Producing the Light Emitting Device)
- The obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- (Performance Assessment)
- The obtained light emitting device underwent a lighting test similarly as done in Example 1.
- (Result)
- The light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- (Discussion)
- In the present example, the matrix of the phosphor containing particle includes an ionic liquid including a constitutional unit derived from DEME. It can be seen from the present example that in the nanoparticle phosphor element the matrix including the constitutional unit derived from the ionic liquid is not limited to a solid (a resin) and may be a liquid. This increases a degree of freedom in design in producing the semiconductor nanoparticle phosphor and the phosphor containing particle.
- Example 7 presents the phosphor containing particle of Example 1A with a non-globular support used to hold an ionic liquid (the semiconductor nanoparticle phosphor: CdSe/ZnS/DAET, and the phosphor containing particle: the semiconductor nanoparticle phosphor/MOE-200T/silica).
- (Producing the Phosphor Containing Particle)
- The support of the present example was produced as follows: Initially, an aqueous phase adjusted so that an aqueous solution of 30% sodium silicate and an aqueous solution of polymethylmethacrylate were 0.83 g/ml and 0.28 g/ml, respectively (a W1 phase), a hexane phase adjusted so that Tween 80 (polyoxyethylene sorbitan monooleate) and Span 80 (sorbitan monooleate) were 0.014 g/ml and 0.007 g/ml, respectively (an O phase), and an aqueous phase adjusted so that ammonium hydrogencarbonate was 0.16 g/ml (a W2 phase) were prepared. The W1 phase was add to the O phase and subsequently they were agitated with a magnetic stirrer at a rotation speed of 900 rpm, and the intermediate product was added to the W2 phase and agitated with a magnetic stirrer at 35° C. for 2 hours.
- Subsequently, water or ethanol was added to the solution which was in turn centrifuged and subjected to an operation repeatedly to remove a supernatant and washed, and thereafter filtrated to obtain a precipitate. Subsequently, the precipitate was dried at 100° C. for 12 hours and then baked at 700° C. for 5 hours to obtain a silica having an average particle size of about 80 μm and having polygonal pores (hereinafter also referred to as “pored silica”) as shown in an SEM analysis result shown in
FIG. 21 . - The obtained pored silica and a semiconductor nanoparticle phosphor containing MOE-200T were mixed together and vacuumed to introduce the MOE-200T solution into the pored silica. Finally, the intermediate product was heated at 80° C. to polymerize and thus resinify the MOE-200T. The obtained phosphor containing particle has the configuration of the semiconductor nanoparticle phosphor/a resin including a constitutional unit derived from MOE-200T/silica.
- (Producing the Light Emitting Device)
- The obtained phosphor containing particle was mixed into acrylic resin and the mixture was dropped on a blue LED chip, and the acrylic resin was cured to produce an LED light emitting device.
- (Observation Result)
-
FIG. 22 is an optical microscopic image obtained when the phosphor containing particle of the present example is irradiated with excitation light having a wavelength of 405 nm. InFIG. 22 , it can be confirmed that the phosphor containing particle emits light. - (Performance Assessment)
- The obtained light emitting device underwent a lighting test similarly as done in Example 1.
- (Result)
- The light emitting device of the present example had satisfactory quantum efficiency and satisfactorily reduced or prevented degradation of efficiency over time.
- (Discussion)
- In the present example, the support holding the ionic liquid has a non-globular shape. Furthermore, in the present example, the pored silica holding the resin including the constitutional unit derived from the ionic liquid does not undergo a process for closing the pores. It can be seen from Example 3 that the present invention may have the support holding the ionic liquid in a non-globular structure and is also able to significantly reduce or prevent degradation of efficiency over time without a process for closing the pores of the support holding the ionic liquid. Note that while the present example presents a combination of the resin including the constitutional unit derived from the ionic liquid and a pored silica having pores open (resin/pore open), it is believed that a combination of the resin including the constitutional unit derived from the ionic liquid and a pored silica having pores closed (resin/pore closed) is also able to provide a similar effect. Furthermore, it is also believed that a combination of the ionic liquid that is not resinified and a pored silica having pores open (liquid/pore open) and a combination of the ionic liquid that is not resinified and a pored silica having pores closed (resin/pore closed) are also able to provide a similar effect.
- In Example 8, a
support 36 having a shape shown inFIG. 9 or asupport 37 having a shape shown inFIG. 10 were produced. Specifically, the methodology of producing the hollow silica capsule of Example 1 having an average particle size of about 10 μm and having pores was used with each source material varied in concentration to produce the support having the shape shown inFIG. 9 orFIG. 10 FIG. 23 is a cross-sectional SEM image of a support having a hollow capsular structure having pores penetrating from a wall surface into an internal space and having a diameter of about 0.3 μm.FIG. 24 is a cross-sectional SEM image of a globular support having pores extending from a surface inwards and having a diameter of about 0.3 μm. Note that the diameter of the pore of the hollow silica capsule of Example 1 was about 20 nm. These supports are able to be used as a support holding an ionic liquid, similarly as done in the other Examples. - It should be understood that the preferred embodiments and examples disclosed herein have been described for the purpose of illustration only and in a non-restrictive manner in any respect. The scope of the present invention is defined by the terms of the claims, rather than the embodiments described above, and is intended to include any modifications within the meaning and scope equivalent to the terms of the claims.
- While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.
Claims (20)
1. A phosphor containing particle comprising:
a semiconductor nanoparticle phosphor; and
a matrix including a constitutional unit derived from an ionic liquid,
the semiconductor nanoparticle phosphor being dispersed in the matrix.
2. The phosphor containing particle according to claim 1 , wherein the matrix includes a resin derived from the ionic liquid.
3. The phosphor containing particle according to claim 2 , wherein the ionic liquid has a polymerizable functional group.
4. The phosphor containing particle according to claim 1 , having a particle size within a range of about 100 nm to about 30 μm.
5. The phosphor containing particle according to claim 1 , wherein the semiconductor nanoparticle phosphor is of a single type.
6. The phosphor containing particle according to claim 1 , comprising a red fluorescent light emitting semiconductor nanoparticle phosphor and a green fluorescent light emitting semiconductor nanoparticle phosphor.
7. The phosphor containing particle according to claim 2 , wherein the resin is crosslinked.
8. The phosphor containing particle according to claim 1 , having an outermost surface including a translucent coating layer.
9. The phosphor containing particle according to claim 8 , wherein a material included in the coating layer is an inorganic material having a band gap equal to or greater than 3.0 eV.
10. The phosphor containing particle according to claim 1 , comprising a support which seals the matrix.
11. The phosphor containing particle according to claim 10 , wherein the support includes silica.
12. The phosphor containing particle according to claim 10 , wherein the semiconductor nanoparticle phosphor has a surface including a polar functional group.
13. The phosphor containing particle according to claim 10 , wherein the support has a hollow capsular structure having pores penetrating from a wall surface into an internal space.
14. The phosphor containing particle according to claim 10 , wherein the support has a globular structure having pores extending from a surface inwards.
15. A light emitting device comprising a light source and a wavelength converter in which the phosphor containing particle according to claim 1 is dispersed in a translucent medium.
16. The light emitting device according to claim 15 , comprising a phosphor containing particle in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, and a phosphor containing particle in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
17. The light emitting device according to claim 15 , wherein a phosphor other than the semiconductor nanoparticle phosphor is further dispersed in the medium.
18. A phosphor containing sheet in which the phosphor containing particle according to claim 1 is dispersed in a sheet-like translucent medium.
19. The phosphor containing sheet according to claim 18 , comprising a phosphor containing particle in which a red fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group, and a phosphor containing particle in which a green fluorescent light emitting semiconductor nanoparticle phosphor is dispersed in a resin including a constitutional unit derived from an ionic liquid including a polymerizable functional group.
20. The phosphor containing sheet according to claim 18 , wherein a phosphor other than the semiconductor nanoparticle phosphor is further dispersed in the medium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/968,910 US10400162B2 (en) | 2015-12-15 | 2018-05-02 | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-244211 | 2015-12-15 | ||
JP2015244210A JP6158904B2 (en) | 2015-12-15 | 2015-12-15 | Nanoparticle phosphor element and light emitting element |
JP2015-244210 | 2015-12-15 | ||
JP2015244211A JP6158905B2 (en) | 2015-12-15 | 2015-12-15 | Light emitting device or phosphor-containing sheet for light emitting device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/968,910 Division US10400162B2 (en) | 2015-12-15 | 2018-05-02 | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20170166807A1 true US20170166807A1 (en) | 2017-06-15 |
Family
ID=59019036
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/375,219 Abandoned US20170166807A1 (en) | 2015-12-15 | 2016-12-12 | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
US15/968,910 Active US10400162B2 (en) | 2015-12-15 | 2018-05-02 | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/968,910 Active US10400162B2 (en) | 2015-12-15 | 2018-05-02 | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
Country Status (3)
Country | Link |
---|---|
US (2) | US20170166807A1 (en) |
KR (1) | KR101915366B1 (en) |
CN (1) | CN106967412A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019052954A1 (en) * | 2017-09-13 | 2019-03-21 | Osram Gmbh | Optoelectronic component and method for producing an optoelectronic component |
US10256377B2 (en) | 2017-02-21 | 2019-04-09 | Sharp Kabushiki Kaisha | Light-emitting device and image display apparatus |
WO2019068478A1 (en) * | 2017-10-05 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Conversion material and radiation-emitting component |
US10263162B2 (en) | 2017-02-21 | 2019-04-16 | Sharp Kabushiki Kaisha | Light emitting device and image displaying system |
JP2019184641A (en) * | 2018-04-02 | 2019-10-24 | シャープ株式会社 | Wavelength conversion member and light-emitting device |
US20190378958A1 (en) * | 2017-02-28 | 2019-12-12 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of manufacturing an optoelectronic component |
US20200044124A1 (en) * | 2017-06-09 | 2020-02-06 | Sharp Kabushiki Kaisha | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
US20200243616A1 (en) * | 2019-01-29 | 2020-07-30 | Sharp Kabushiki Kaisha | Cadmium-free quantum dot led with improved emission color |
US11040323B2 (en) * | 2015-11-06 | 2021-06-22 | The University Of Chicago | Colloids of inorganic nanocrystals in molten media and related methods |
US20210296542A1 (en) * | 2020-03-18 | 2021-09-23 | Osram Opto Semiconductors Gmbh | Structure, Methods for Producing a Structure and Optoelectronic Device |
US20210389651A1 (en) * | 2020-06-15 | 2021-12-16 | Panasonic Intellectual Property Management Co., Ltd. | Light source device, method of manufacturing light source device, and projector |
US11242481B2 (en) * | 2016-12-19 | 2022-02-08 | Fujifilm Corporation | Wavelength conversion film and backlight unit |
US11322707B2 (en) | 2019-01-29 | 2022-05-03 | Sharp Kabushiki Kaisha | Cadmium-free quantum dot LED with improved emission color |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110350067A (en) * | 2018-04-02 | 2019-10-18 | 夏普株式会社 | Wavelength convert component and light emitting device |
CN109135749B (en) * | 2018-09-29 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | Hybrid composite fluorescent powder and preparation method and application thereof |
CN109859629A (en) * | 2018-12-28 | 2019-06-07 | 清华大学深圳研究生院 | A kind of flexible LED display film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100044640A1 (en) * | 2007-06-12 | 2010-02-25 | Ajjer Llc | High refractive index materials and composites |
US20100123155A1 (en) * | 2008-11-19 | 2010-05-20 | Nanoco Technologies Limited | Semiconductor nanoparticle-based light-emitting devices and associated materials and methods |
US20100163798A1 (en) * | 2008-12-26 | 2010-07-01 | Tatsuya Ryowa | Semiconductor nanoparticle phosphor including nanoparticle core composed of group-xiii and -xv semiconductor and first shell and second shell for coating the same |
US20130189803A1 (en) * | 2012-01-19 | 2013-07-25 | Nanoco Technologies, Ltd. | Molded Nanoparticle Phosphor For Light Emitting Applications |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4997503B2 (en) * | 2004-11-19 | 2012-08-08 | 国立大学法人 奈良先端科学技術大学院大学 | Composition containing semiconductor ultrafine particles and method for producing the same |
JP2009537521A (en) * | 2006-05-15 | 2009-10-29 | アイアールエム・リミテッド・ライアビリティ・カンパニー | Terephthalamate compounds and compositions and their use as HIV integrase inhibitors |
CN103403892A (en) | 2011-03-31 | 2013-11-20 | 松下电器产业株式会社 | Semiconductor light-emitting device |
CN103459549A (en) * | 2011-03-31 | 2013-12-18 | 松下电器产业株式会社 | Fluorescent film and display film |
JP2014056896A (en) | 2012-09-11 | 2014-03-27 | Ns Materials Kk | Light-emitting device utilizing semiconductor and manufacturing method of the same |
CN105102580B (en) * | 2013-03-20 | 2018-03-16 | 皇家飞利浦有限公司 | The quantum dot of encapsulation in porous particle |
WO2015187490A1 (en) * | 2014-06-03 | 2015-12-10 | 3M Innovative Properties Company | Particles with quantum dots and method of making the same |
-
2016
- 2016-12-12 US US15/375,219 patent/US20170166807A1/en not_active Abandoned
- 2016-12-13 KR KR1020160169663A patent/KR101915366B1/en active IP Right Grant
- 2016-12-15 CN CN201611177153.9A patent/CN106967412A/en active Pending
-
2018
- 2018-05-02 US US15/968,910 patent/US10400162B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100044640A1 (en) * | 2007-06-12 | 2010-02-25 | Ajjer Llc | High refractive index materials and composites |
US20100123155A1 (en) * | 2008-11-19 | 2010-05-20 | Nanoco Technologies Limited | Semiconductor nanoparticle-based light-emitting devices and associated materials and methods |
US20100163798A1 (en) * | 2008-12-26 | 2010-07-01 | Tatsuya Ryowa | Semiconductor nanoparticle phosphor including nanoparticle core composed of group-xiii and -xv semiconductor and first shell and second shell for coating the same |
US20130189803A1 (en) * | 2012-01-19 | 2013-07-25 | Nanoco Technologies, Ltd. | Molded Nanoparticle Phosphor For Light Emitting Applications |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11040323B2 (en) * | 2015-11-06 | 2021-06-22 | The University Of Chicago | Colloids of inorganic nanocrystals in molten media and related methods |
US11242481B2 (en) * | 2016-12-19 | 2022-02-08 | Fujifilm Corporation | Wavelength conversion film and backlight unit |
US10256377B2 (en) | 2017-02-21 | 2019-04-09 | Sharp Kabushiki Kaisha | Light-emitting device and image display apparatus |
US10263162B2 (en) | 2017-02-21 | 2019-04-16 | Sharp Kabushiki Kaisha | Light emitting device and image displaying system |
US20190378958A1 (en) * | 2017-02-28 | 2019-12-12 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of manufacturing an optoelectronic component |
US10847684B2 (en) * | 2017-02-28 | 2020-11-24 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of manufacturing an optoelectronic component |
US20200044124A1 (en) * | 2017-06-09 | 2020-02-06 | Sharp Kabushiki Kaisha | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
US10886442B2 (en) * | 2017-06-09 | 2021-01-05 | Sharp Kabushiki Kaisha | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
WO2019052954A1 (en) * | 2017-09-13 | 2019-03-21 | Osram Gmbh | Optoelectronic component and method for producing an optoelectronic component |
WO2019068478A1 (en) * | 2017-10-05 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Conversion material and radiation-emitting component |
DE102017123097B4 (en) | 2017-10-05 | 2024-03-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Conversion material and radiation-emitting component |
JP2019184641A (en) * | 2018-04-02 | 2019-10-24 | シャープ株式会社 | Wavelength conversion member and light-emitting device |
US11322707B2 (en) | 2019-01-29 | 2022-05-03 | Sharp Kabushiki Kaisha | Cadmium-free quantum dot LED with improved emission color |
US20200243616A1 (en) * | 2019-01-29 | 2020-07-30 | Sharp Kabushiki Kaisha | Cadmium-free quantum dot led with improved emission color |
US20210296542A1 (en) * | 2020-03-18 | 2021-09-23 | Osram Opto Semiconductors Gmbh | Structure, Methods for Producing a Structure and Optoelectronic Device |
US11508880B2 (en) * | 2020-03-18 | 2022-11-22 | Tdk Electronics Ag | Structure, methods for producing a structure and optoelectronic device |
US20210389651A1 (en) * | 2020-06-15 | 2021-12-16 | Panasonic Intellectual Property Management Co., Ltd. | Light source device, method of manufacturing light source device, and projector |
US11640104B2 (en) * | 2020-06-15 | 2023-05-02 | Panasonic Intellectual Property Management Co., Ltd. | Light source device having a sealing member, method of manufacturing the light source device, and projector including the light source device |
Also Published As
Publication number | Publication date |
---|---|
KR20170071432A (en) | 2017-06-23 |
KR101915366B1 (en) | 2018-11-05 |
US20180251677A1 (en) | 2018-09-06 |
US10400162B2 (en) | 2019-09-03 |
CN106967412A (en) | 2017-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10400162B2 (en) | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same | |
KR101923615B1 (en) | Semiconductor nanoparticle - based light emitting devices and associated materials and methods | |
JP6134705B2 (en) | Semiconductor nanoparticle-containing material and light-emitting device incorporating the same | |
KR101584688B1 (en) | Encapsulated semiconductor nanoparticle-based materials comprising an additive | |
US20170352779A1 (en) | Nanoparticle phosphor element and light emitting element | |
CN106715643B (en) | For dispersing quantum dot in organosilicon main body to obtain the siloxanes ligand of the color converter for LED illumination | |
JP2014519708A5 (en) | ||
WO2014147570A1 (en) | Encapsulated quantum dots in porous particles | |
JP6158905B2 (en) | Light emitting device or phosphor-containing sheet for light emitting device | |
CN107474019A (en) | The nano-particle that surface is modified | |
JP6158904B2 (en) | Nanoparticle phosphor element and light emitting element | |
US10886442B2 (en) | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same | |
KR20170138347A (en) | Nanoparticle phosphor element and light emitting element | |
JP6173394B2 (en) | Nanoparticle phosphor and light emitting device | |
JP6620124B2 (en) | Nanoparticle phosphor element and light emitting element | |
US9716211B2 (en) | Semiconductor phosphor nanoparticle, semiconductor phosphor nanoparticle-containing glass, light emitting device, and light emitting element | |
JP6712968B2 (en) | Phosphor-containing particles, light-emitting device using the same, and phosphor-containing sheet | |
KR20180082964A (en) | Wavelength conversion member and light-emitting device | |
US20190305195A1 (en) | Wavelength conversion member and light emitting device | |
JP2019184641A (en) | Wavelength conversion member and light-emitting device | |
JP2017175163A (en) | Light-emitting device or phosphor-containing sheet for light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SHARP KABUSHIKI KAISHA, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KUZUMOTO, YASUTAKA;RYOHWA, TATSUYA;MORISHITA, MAMI;AND OTHERS;SIGNING DATES FROM 20161124 TO 20161125;REEL/FRAME:040706/0240 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |