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TWM588883U - 半導體製程模組的中環 - Google Patents

半導體製程模組的中環 Download PDF

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TWM588883U
TWM588883U TW108207726U TW108207726U TWM588883U TW M588883 U TWM588883 U TW M588883U TW 108207726 U TW108207726 U TW 108207726U TW 108207726 U TW108207726 U TW 108207726U TW M588883 U TWM588883 U TW M588883U
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ring
process module
middle ring
semiconductor process
patent application
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TW108207726U
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喬安娜 吳
韓慧玲
克利斯多夫 肯伯
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美商蘭姆研究公司
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    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
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Abstract

本創作提出在製程模組內所用之升降頂桿機構，該升降頂桿機構包括複數升降頂桿，該等升降頂桿沿著界定在製程模組中之下電極之圓周均勻分佈。每一升降頂桿包括頂部構件，該頂部構件藉由被倒角界定之軸環與底部構件分離。套筒係界定在下電極之主體內之殼體中，其中基板在下電極上被接收以進行製程。殼體設置於界定在下電極中之中環下方。升降頂桿之軸環係用於與套筒之底側接合，且套筒之頂側係配置以在升降頂桿啟動時與中環接合。致動器係用於驅動複數升降頂桿，其中致動器耦接至複數升降頂桿之每一者及致動器驅動部，致動器驅動部連接至致動器。控制器係耦接至致動器驅動部以控制複數升降頂桿之運動。

Description

半導體製程模組的中環
本創作係有關在半導體製程模組中所用之環。 [相關申請案之交互參照]
本申請案係關於2019年5月10日提出且題為「Automated Process Module Ring Positioning and Replacement」之美國臨時專利申請案第62/846,579號，並主張其優先權，其完整內容係併入本申請案中之參考資料。
用於處理半導體基板之典型基板處理系統包括：基板儲存盒（亦稱「基板儲存站」或前開式晶圓傳送盒（FOUP）），用於傳送及儲存基板；設備前端模組（EFEM），連接在FOUP及一或更多載入載出室（亦稱為「氣閘」）之第一側之間；真空傳輸模組，耦接至一或更多氣閘之第二側；及一或更多製程模組，耦接至真空傳輸模組。每一製程模組係用於執行特定的製造操作，例如清潔操作、沉積、蝕刻操作、清洗操作、乾燥操作等。用於執行這些操作之化學物質及/或製程環境導致對製程模組中一些硬體構件之損壞，該等硬體構件經常暴露於製程模組內之嚴苛環境。
需要定期且迅速地更換損壞或磨損之硬體構件，以確保這些損壞的構件在半導體基板處理期間不會將製程模組中其他下覆的硬體構件暴露於嚴苛的環境。硬體構件可為例如頂環、中環或其他可在製程模組內相鄰半導體基板而設置之環，例如邊緣環。在蝕刻操作期間，頂環基於其位置可能因連續暴露於電漿之離子轟擊而被損壞或消耗，其中該電漿係在用於蝕刻操作之製程模組內產生。需要迅速更換損壞或使用過的環，以確保損壞的頂環不會暴露其他下覆的硬體構件（例如靜電夾盤或基座之其餘構件）於嚴苛的製程環境。可更換之硬體構件在本文中稱為消耗部件。
現今的頂環在不將製程模組打開至大氣環境的情況下將不易被移除。此缺點之原因在於它們的形狀無法有效地藉由製程模組內之自動化工具進行處理，亦無法有效地藉由終端效應器機械臂進行相關處理。
本創作實施例於此背景下產生。
本創作實施例界定在基板處理系統之製程模組內所用之升降頂桿機構，該升降頂桿機構係設計以移除及更換在基板處理系統內設置之製程模組之損壞的硬體構件，例如頂環（例如，邊緣環）及中環，而不需要破真空（意即，將基板處理系統暴露於大氣環境）。可更換之損壞的硬體構件在本文中亦稱為消耗部件。基板處理系統包括一或更多製程模組，每一製程模組被配置以執行半導體基板處理操作。由於製程模組中之消耗部件暴露於內部嚴苛的化學品及製程環境，消耗部件會損壞並需要及時地更換。必須迅速地更換損壞的消耗部件，以避免損害製程模組之下覆的硬體構件。
藉由將可拆卸的環儲存站安裝至基板處理系統，可在不打開基板處理系統之情況下更換損壞的消耗部件（例如，頂環/邊緣環或中環）。環儲存站類似於基板儲存站，該基板儲存站提供用於製程之基板。環儲存站包括複數水平堆疊之隔間，用於接收及儲存消耗部件（意即，新的及使用過的消耗部件）。環儲存站及製程模組耦接至控制器，以使控制器能協調環儲存站及各種製程模組之使用，同時保持製程模組在真空狀態，以允許更換各製程模組中之消耗部件。
為了容易地取放損壞的消耗部件，基板處理系統之製程模組係設計為包括升降頂桿機構。當接合時，升降頂桿機構係配置以允許消耗部件從安裝位置移動至更換位置，使基板處理系統內之機械臂之終端效應器可接近並取回從製程模組中上升之消耗部件。從環儲存站取得替換用消耗部件（意即，新的消耗部件）並將其傳送至製程模組，而升降頂桿機構用於接收新的消耗部件並將其降低至製程模組中之適當位置。
環儲存站及基板處理系統之設計使為了取放損壞的消耗部件而得將基板處理系統打開至大氣環境之需求不復存在。例如，基板處理系統可包括維持在大氣環境下之設備前端模組（EFEM）。EFEM之第一側可耦接至一或更多基板儲存站（例如FOUPs），以將基板傳輸至基板處理系統中及從基板處理系統中傳出基板。除了基板儲存站，EFEM之第一側或不同側可耦接至一或更多環儲存站。EFEM之第二側可藉由一或更多載入載出室（例如氣閘）與真空傳輸模組連接。一或更多製程模組可耦接至真空傳輸模組。
EFEM之機械臂可用於在環儲存站及氣閘之間傳輸消耗部件。在此實施例中，氣閘作為中介點，當氣閘保持在大氣環境下時允許從EFEM接收消耗部件。在接收消耗部件之後，將氣閘抽至真空，並使用真空傳輸模組之機械臂將消耗部件移至製程模組。真空傳輸模組之機械臂用於將消耗部件移至製程模組中。製程模組內之升降頂桿機構藉由升高及降低消耗部件以提供消耗部件之取放，因此可在真空環境下藉由真空傳輸模組之機械臂以執行消耗部件之更換。
真空傳輸模組之機械臂及製程模組之升降頂桿機構共同允許精確地傳送及取回消耗部件，從而消除在消耗部件更換期間對製程模組之任何硬體構件之損壞風險。當消耗部件以受控方式移入製程模組中時，在更換損壞的消耗部件之後，重新調整製程模組以使其進入有效操作狀態所需的時間大幅減少。
在替代實施例中，環儲存站可保持在真空，並直接地、或藉由基板處理系統之真空傳輸模組而耦接至製程模組。真空傳輸模組之機械臂可用於在環儲存站及製程模組之間移動消耗部件而不破壞真空，從而可在沒有污染風險之情況下更換消耗部件。因此，在更換損壞的消耗部件之後，重新調整製程模組以使其進入有效操作狀態所需的時間大幅減少。
在一實施例中，揭露一種升降頂桿機構。升降頂桿機構用於基板處理系統之製程模組內，且用於交換製程模組之消耗部件（例如頂環或中環）。升降頂桿機構包括複數升降頂桿，該等升降頂桿沿著界定在製程模組中之下電極（例如基座或靜電夾盤）之圓周均勻分佈。每一升降頂桿包括頂部構件及底部構件。頂部構件藉由以倒角界定之軸環與底部構件分離。頂部構件係配置以延伸穿過界定在殼體中之套筒，並與製程模組中所用之頂環之下側表面接合，其中該殼體位於製程模組中之下電極之主體內。升降頂桿之軸環係配置與套筒之底表面接合。當複數升降頂桿啟動時，套筒之頂表面係配置與中環之底側接合。致動器耦接至複數升降頂桿中之每一者。致動器係連接至致動器驅動部，該致動器驅動部提供動力以驅動致動器。控制器耦接至致動器驅動部並配置以提供控制信號以控制複數升降頂桿之運動。
在另一實施例中，揭露一種在基板處理系統內所用之製程模組。製程模組包括頂部電極，該頂部電極具有沿著水平面均勻分佈之複數引出口。複數引出口連接至製程化學物源，並配置以向製程模組提供製程化學物以產生電漿。頂部電極為電接地。下電極相對於頂部電極而設置，且該下電極係配置以支撐接收之基板以進行處理。下電極連接至電源以提供電力而產生電漿。下電極包括設置在靠近外邊緣之主體內之底環。殼體從底環之頂表面向下延伸至底環之主體中。殼體係配置以容納套筒。中環設置在底環之正上方並與底環對齊。中環包括從中環頂表面垂直延伸至中環底表面之通道。頂環設置在中環之正上方並與中環對齊，使得當基板在下電極上被接收時，頂環之頂表面與基板之頂表面共平面。升降頂桿機構界定在下電極之主體中。升降頂桿機構包括複數升降頂桿。每一升降頂桿包括頂部構件及底部構件。頂部構件藉由以倒角界定之軸環與底部構件分離。複數升降頂桿沿著下電極之圓周均勻分佈，以與底環、中環及頂環對齊。致動器耦接至每一升降頂桿。複數升降頂桿之致動器連接至致動器驅動部，該致動器驅動部提供動力以驅動致動器。
藉由以下之詳細描述並結合附圖，本創作之其他態樣將變得顯而易見，附圖藉由範例之方式以顯示本創作之原理。
圖1顯示在半導體製程模組中所用之中環100之底表面之立體俯視圖。中環100設置在頂環下方，該頂環係沿著基板支撐件之周邊設置，使在製程模組中，中環位於頂環之正下方。在一實施例中，中環為製程模組之可替換構件。
圖2顯示中環100之底表面之俯視圖。中環係設置以鄰近基板支撐件之內壁。在一些實施例中，中環100之內徑係界定以小於基板之外徑，該基板在製程模組中之基板支撐件上被接收。因此，在基板支撐件上被接收之基板之一部分延伸在中環上方。例如，中環100之內徑可小於設置在中環上方之頂環之內徑。在一些實施例中，中環之外徑係界定為等於頂環之外徑。
圖3顯示中環100之頂表面之俯視圖。中環100包括頂表面上之一或更多接合點111，用於將中環接合至頂環。一或更多接合點111均勻地分佈在頂表面上。在一個實施例中，接合點111界定在中環之內邊緣及外邊緣之間之中間。在一些實施例中，可在中環100之底表面上界定附加的接合點，以將中環接合至界定在製程模組中之底環。
圖4顯示中環100之側視圖。中環100係顯示為包括設置在中環100之表面上之接合點111。在示例性圖式中，接合點111係設置在中環100之底表面上。
圖5顯示中環100之橫剖面圖。中環100之邊緣之細節係參照圖6以描述。
圖6顯示標識在圖5中之中環之邊緣之橫剖面圖之放大圖。中環包括鄰近基板支撐件之側壁而設置之內邊緣101a及外邊緣101b。外邊緣101b可相鄰於蓋環，蓋環係設置在基板支撐件及製程模組之腔室側壁之間。中環100包括頂表面105及一平坦的底表面106，頂表面105包括複數構件。底表面106係配置以與底環（未顯示）之頂表面接合。頂表面105包括環突起部103，該環突起部係設置在內邊緣101a及外邊緣101b之間。環突起部103係界定以與界定在頂環中之通道接合。內通道102係界定在內邊緣101a及環突起部103之間。
外通道104係界定在環突起部103及外邊緣101b之間，使環突起部103設置在內通道102及外通道104之間。外通道104在中環100之頂表面105及底表面106之間延伸。外通道104包括底部104a及頂部104b。底部104a之直徑（亦即，寬度）係界定為小於外通道104之頂部104b之直徑（亦即，寬度）。底部104a之直徑之尺寸允許包括在製程模組中之升降頂桿之頂部延伸通過，以便當升降頂桿在接合/非接合時，允許升降頂桿升高及降低頂環。在一些實施例中，界定在中環100之外邊緣101b上且連接至頂表面105之頂側表面107為圓弧形。在其他實施例中，界定在中環100之外邊緣101b且連接至底表面106之底側表面109為圓弧形。內通道102及內邊緣101a之間之頂表面低於環突起部103之頂表面。在一實施例中，從底表面106到外邊緣101b形成一台階。
圖7顯示在圖1中顯示之中環之部分之1-1橫剖面之放大圖。該橫剖面圖顯示界定在中環之底表面上之接合點之外形，中環之底表面為平面的。中環100之頂表面105之外形係界定以與包括在製程模組中之頂環之底表面之外形互補。
100‧‧‧中環 101a‧‧‧內邊緣 101b‧‧‧外邊緣 102‧‧‧內通道 103‧‧‧環突起部 104‧‧‧外通道 104a‧‧‧底部 104b‧‧‧頂部 105‧‧‧頂表面 106‧‧‧底表面 107‧‧‧頂側表面 109‧‧‧底側表面 111‧‧‧接合點
圖1為根據本創作之半導體製程模組中環之底表面之立體俯視圖；
圖2為其俯視圖；
圖3為圖1中之中環之頂表面之俯視圖；
圖4為其側視圖；
圖5為圖3之中環之橫剖面圖；
圖6為顯示在圖3中之中環邊緣之放大橫剖面圖；及
圖7為顯示在圖1中之中環之部分之放大橫剖面圖。
101a‧‧‧內邊緣
101b‧‧‧外邊緣
102‧‧‧內通道
103‧‧‧環突起部
104‧‧‧外通道
104a‧‧‧底部
104b‧‧‧頂部
105‧‧‧頂表面
106‧‧‧底表面
107‧‧‧頂側表面
109‧‧‧底側表面

Claims (9)

  1. 一種用於半導體製程模組之中環，該中環係配置以放置在一頂環下方，該中環係配置以圍繞該半導體製程模組之一基板支撐件，該中環之特徵在於： 一底表面，係為平面的； 一頂表面，具有： 一環突起部，界定在該中環之一外邊緣及一內邊緣之間，該環突起部係配置以當該頂環設置在該中環上方時，與該頂環之一通道接合； 一內通道，界定在該中環之該內邊緣及該環凸起部之間；及 一外通道，界定在該中環之該外邊緣及該環突起部之間，該外通道從該中環之該底表面延伸至該中環之該頂表面，其中該環突起部係設置在該內通道及該外通道之間。
  2. 如申請專利範圍第1項之用於半導體製程模組之中環，其中該外通道包括一底部及一頂部，該外通道之該底部之尺寸係允許在該製程模組內實施之一升降頂桿之一頂部延伸穿過。
  3. 如申請專利範圍第2項之用於半導體製程模組之中環，其中該底部之一寬度小於該外通道之該頂部之一寬度。
  4. 如申請專利範圍第1項之用於半導體製程模組之中環，其中該中環之該底表面係配置以與界定在該製程模組中之一底環之一頂表面接合。
  5. 如申請專利範圍第1項之用於半導體製程模組之中環，其中該中環之該頂表面之一外形與在該製程模組內之該中環之正上方設置之該頂環之一底表面之一外形互補。
  6. 如申請專利範圍第1項之用於半導體製程模組之中環，其中界定在該中環之該外邊緣處且連接至該頂表面之一頂側表面為圓弧形。
  7. 如申請專利範圍第1項之用於半導體製程模組之中環，其中界定在該中環之該外邊緣處且連接至該底表面之一底側表面為圓弧形。
  8. 如申請專利範圍第1項之用於半導體製程模組之中環，其中在該內通道及該內邊緣之間之一頂表面低於該中環之該環突起部之一頂表面。
  9. 如申請專利範圍第1項之用於半導體製程模組之中環，其中從該底表面至該外邊緣界定一台階。
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